title: Vertical Organic Field-Effect Transistors for Integrated Optoelectronic Applications.
abstract: Direct integration of a vertical organic field-effect transistor (VOFET) and an optoelectronic device offers a single stacked, low power optoelectronic VOFET with high aperture ratios. However, a functional optoelectronic VOFET could not be realized because of the difficulty in fabricating transparent source and gate electrodes. Here, we report a VOFET with an on/off ratio up to 10(5) as well as output current saturation by fabricating a transparent gate capacitor consisting of a perforated indium tin oxide (ITO) source electrode, HfO2 gate dielectric, and ITO gate electrode. Effects of the pore size and the pore depth within the porous ITO electrodes on the on/off characteristic of a VOFET are systematically explained in this work. By combining a phosphorescent organic light-emitting diode with an optimized VOFET structure, a vertical organic light-emitting transistor with a luminance on/off ratio of 10(4) can be fabricated.
authors.affiliation: Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27606, United States.
authors.forename: Hyeonggeun
authors.initials: H
authors.lastname: Yu
authors.affiliation: Department of Electrical and Computer Engineering, University of Florida , Gainesville, Florida 32611, United States.
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Dong
authors.affiliation: Department of Electrical and Computer Engineering, University of Florida , Gainesville, Florida 32611, United States.
authors.forename: Jing
authors.initials: J
authors.lastname: Guo
authors.affiliation: School of Materials Science and Engineering, Oklahoma State University , Tulsa, Oklahoma 74106, United States.
authors.forename: Doyoung
authors.initials: D
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, North Carolina State University , Raleigh, North Carolina 27606, United States.
authors.forename: Franky
authors.initials: F
authors.lastname: So
keywords: Schottky diode; current saturation; on/off ratio; organic light-emitting transistor; vertical field-effect transistor