title: Facile fabrication of properties-controllable graphene sheet.
abstract: Graphene has been received a considerable amount of attention as a transparent conducting electrode (TCE) which may be able to replace indium tin oxide (ITO) to overcome the significant weakness of the poor flexibility of ITO. Given that graphene is the thinnest 2-dimensional (2D) material known, it shows extremely high flexibility, and its lateral periodic honeycomb structure of sp(2)-bonded carbon atoms enables ~2.3% of incident light absorption per layer. However, there is a trade-off between the electrical resistance and the optical transmittance, and the fixed absorption rate in graphene limits is use when fabricating devices. Therefore, a more efficient method which continuously controls the optical and electrical properties of graphene is needed. Here, we introduce a method which controls the optical transmittance and the electrical resistance of graphene through various thicknesses of the top Cu layers with a Cu/Ni metal catalyst structure used to fabricate a planar mesh pattern of single and multi-layer graphene. We exhibit a continuous transmittance change from 85% (MLG) to 97.6% (SLG) at an incident light wavelength of 550 nm on graphene samples simultaneously grown in a CVD quartz tube. We also investigate the relationships between the sheet resistances.
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Jin Sik
authors.initials: JS
authors.lastname: Choi
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Hongkyw
authors.initials: H
authors.lastname: Choi
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Department of Advanced Chemical Engineering, Mokwon University, Daejeon 302-729, Korea.
authors.forename: Ki-Chul
authors.initials: KC
authors.lastname: Kim
authors.affiliation: UNIST Central Research Facilities (UCRF), Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Korea.
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Young-Jun
authors.initials: YJ
authors.lastname: Yu
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Jin Tae
authors.initials: JT
authors.lastname: Kim
authors.affiliation: Division of Quantum Phases &Devices, Department of Physics, Konkuk University, Seoul 143-701 Korea.
authors.forename: Jin-Soo
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Soft I/O interface Research Section, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Jin-Wook
authors.initials: JW
authors.lastname: Shin
authors.affiliation: Soft I/O interface Research Section, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Hyunsu
authors.initials: H
authors.lastname: Cho
authors.affiliation: Creative Research Center for Graphene Electronics, Electronics and Telecommunications Research Institute (ETRI), 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Choon-Gi
authors.initials: CG
authors.lastname: Choi