title: Black phosphorus nonvolatile transistor memory.
abstract: We demonstrated nanofloating gate transistor memory devices (NFGTMs) using mechanically-exfoliated few-layered black phosphorus (BP) channels and gold nanoparticle (AuNPs) charge trapping layers. The resulting BP-NFGTMs exhibited excellent memory performances, including the five-level data storage, large memory window (58.2 V), stable retention (10(4) s), and cyclic endurance (1000 cycles).
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 16419, Korea. jhcho94@skku.edu.
authors.forename: Dain
authors.initials: D
authors.lastname: Lee
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 16419, Korea. jhcho94@skku.edu.
authors.forename: Yongsuk
authors.initials: Y
authors.lastname: Choi
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 16419, Korea. jhcho94@skku.edu and Department of Physics, Suwon 16419, Korea.
authors.forename: Euyheon
authors.initials: E
authors.lastname: Hwang
authors.affiliation: Department of Chemical Engineering, Soongsil University, Seoul 156-743, Korea.
authors.forename: Moon Sung
authors.initials: MS
authors.lastname: Kang
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 16419, Korea. jhcho94@skku.edu and School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
authors.forename: Seungwoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Suwon 16419, Korea. jhcho94@skku.edu and School of Chemical Engineering, Sungkyunkwan University, Suwon 16419, Korea.
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Cho