title: Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices.
abstract: Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. This NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited to InGaN-based light emitting devices.
authors.affiliation: Department of Physics, Applied Physics &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.|Spin Engineering Physics Team, Korea Basic Science Institute (KBSI), Daejeon 305-806, South Korea.
authors.forename: Junhyeok
authors.initials: J
authors.lastname: Bang
authors.affiliation: Department of Physics, Applied Physics &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
authors.forename: Y Y
authors.initials: YY
authors.lastname: Sun
authors.affiliation: 182 Shingwan, Department of Physics, Kongju National University, Kongju Chungnam 314-701, South Korea.
authors.forename: Jung-Hoon
authors.initials: JH
authors.lastname: Song
authors.affiliation: Department of Physics, Applied Physics &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
authors.forename: S B
authors.initials: SB
authors.lastname: Zhang