title: High Performance Nonvolatile Transistor Memories Utilizing Functional Polyimide-Based Supramolecular Electrets.
abstract: We report pentacene-based organic field-effect transistor memory devices utilizing supramolecular electrets, consisting of a polyimide, PI(6FOH-ODPA), containing hydroxyl groups for hydrogen bonding with amine functionalized aromatic rings (AM) of 1-aniline (AM1), 2-naphthylamine (AM2), 2-aminoanthracene (AM3), and 1-aminopyrene (AM4). The effect of the phenyl ring size and composition of AM1-AM4 on the hole-trapping capability of the fabricated devices was investigated systematically. Under an operating voltage under ±40 V, the prepared devices using the electrets of 100 % AM1-AM4/PI ratios exhibited a memory window of 0, 8.59, 25.97, and 29.95 V, respectively, suggesting that the hole-trapping capability increased with enhancing phenyl ring size. The memory window was enhanced as the amount of AM in PI increased. Furthermore, the devices showed a long charge-retention time of 10(4)  s with an ON/OFF current ratio of around 10(3) -10(4) and multiple switching stability over 100 cycles. This study demonstrated that the electrical characteristics of the OFET memory devices could be manipulated through the chemical compositions of the supramolecular electrets.
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
authors.forename: Wei-Yao
authors.initials: WY
authors.lastname: Tung
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
authors.forename: Meng-Hsien
authors.initials: MH
authors.lastname: Li
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
authors.forename: Hung-Chin
authors.initials: HC
authors.lastname: Wu
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
authors.forename: Hsin-Yu
authors.initials: HY
authors.lastname: Liu
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan.
authors.forename: Yun-Ting
authors.initials: YT
authors.lastname: Hsieh
authors.affiliation: Department of Chemical Engineering, National Taiwan University, No. 1, Sec. 4, Roosevelt Rd., Taipei, 10617, Taiwan. chenwc@ntu.edu.tw.
authors.forename: Wen-Chang
authors.initials: WC
authors.lastname: Chen
keywords: field-effect transistor; hydrogen bonding; memory effects; organic materials; polyimide