title: An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes.
abstract: High-performance vertical field-effect transistors are developed, which are based on graphene electrodes doped using the underside doping method. The underside doping method enables effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene.
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jong Su
authors.initials: JS
authors.lastname: Kim
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Beom Joon
authors.initials: BJ
authors.lastname: Kim
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Young Jin
authors.initials: YJ
authors.lastname: Choi
authors.affiliation: Department of Chemical Engineering, Soongsil University, Seoul, 156-743, South Korea.
authors.forename: Moo Hyung
authors.initials: MH
authors.lastname: Lee
authors.affiliation: Department of Chemical Engineering, Soongsil University, Seoul, 156-743, South Korea.
authors.forename: Moon Sung
authors.initials: MS
authors.lastname: Kang
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.|School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Cho
keywords: doping; graphene; injection barriers; organic semiconductors; vertical transistors