title: Influence of Ambient Gas on the Performance of Quantum-Dot Light-Emitting Diodes.
abstract: Here, we report the influence of the ambient gas on the performance of quantum dot-based light-emitting diodes (QD-LEDs). The blue QD-LED devices with the maximum external quantum efficiency of 8.1% and the turn-on voltage of 2.7 V could be obtained in air. The efficiency decreases by 12% and turn-on voltage increases by 0.3 V relative to the control devices fabricated in a N2-filled glovebox. The histogram of maximum external quantum efficiency (EQE) shows average peak EQE of 8.08% and a low standard deviation of 3.63%, suggesting high reproducibility. Correspondingly, the operational lifetime of 376 h is obtained, which is on par with 408 h of devices fabricated in N2. For the devices fabricated in air, relatively high efficiency could be maintained only at low voltages, because of the near balanced injection of carriers under low bias. The measurements of contact potential difference, chemical composition, and surface roughness are used to verify the variation of energy level and surface morphology of films influenced by different ambient gas. These results would offer reasonable guidance for the application of QD-LEDs in actual large-scale production.
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.|College of Chemistry, Liaoning University , Shenyang, Liaoning 110036, China.
authors.forename: Qingli
authors.initials: Q
authors.lastname: Lin
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Chen
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.|Collaborative Innovation Center of Nano Functional Materials and Applications, Kaifeng, Henan 475000, P.R. China.
authors.forename: Hongzhe
authors.initials: H
authors.lastname: Wang
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.
authors.forename: Huaibin
authors.initials: H
authors.lastname: Shen
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.
authors.forename: Aqiang
authors.initials: A
authors.lastname: Wang
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Wang
authors.affiliation: Key Laboratory for Special Functional Materials of Ministry of Education, Henan University , Kaifeng, Henan 475004, China.
authors.forename: Fengjuan
authors.initials: F
authors.lastname: Zhang
authors.affiliation: College of Chemistry, Liaoning University , Shenyang, Liaoning 110036, China.
authors.forename: Fang
authors.initials: F
authors.lastname: Guo
authors.affiliation: Collaborative Innovation Center of Nano Functional Materials and Applications, Kaifeng, Henan 475000, P.R. China.
authors.forename: Lin Song
authors.initials: LS
authors.lastname: Li
keywords: ambient gas; blue emission; electroluminescence; light-emitting diodes; quantum dot