title: Graphene Coupled with Silicon Quantum Dots for High-Performance Bulk-Silicon-Based Schottky-Junction Photodetectors.
abstract: Graphene is coupled with silicon quantum dots (Si QDs) on top of bulk Si to form a hybrid photodetector. Si QDs cause an increase of the built-in potential of the graphene/Si Schottky junction while reducing the optical reflection of the photodetector. Both the electrical and optical contributions of Si QDs enable a superior performance of the photodetector.
authors.affiliation: State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Ting
authors.initials: T
authors.lastname: Yu
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Feng
authors.initials: F
authors.lastname: Wang
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Lingling
authors.initials: L
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Pi
authors.affiliation: State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Deren
authors.initials: D
authors.lastname: Yang
keywords: antireflection; charge transfer; graphene; photodetectors; silicon quantum dots