title: Nanotexturing To Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap.
abstract: Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. Two-dimensional semiconductors have revealed promising perspectives in nanotechnology. However, the tunability of their physical properties is challenging for semiconductors studied until now. Here we show the ability of morphological manipulation strategies, such as nanotexturing or, at the limit, important surface roughness, to enhance light absorption and the luminescent response of atomically thin indium selenide nanosheets. Besides, quantum-size confinement effects make this two-dimensional semiconductor to exhibit one of the largest band gap tunability ranges observed in a two-dimensional semiconductor: from infrared, in bulk material, to visible wavelengths, at the single layer. These results are relevant for the design of new optoelectronic devices, including heterostructures of two-dimensional materials with optimized band gap functionalities and in-plane heterojunctions with minimal junction defect density.
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Mauro
authors.initials: M
authors.lastname: Brotons-Gisbert
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Daniel
authors.initials: D
authors.lastname: Andres-Penares
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Joonki
authors.initials: J
authors.lastname: Suh
authors.affiliation: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra 08193 Barcelona, Spain.
authors.forename: Francisco
authors.initials: F
authors.lastname: Hidalgo
authors.affiliation: Intenanomat S.L., c/Catedrático José Beltrán 2, 46980 Paterna, Spain.
authors.forename: Rafael
authors.initials: R
authors.lastname: Abargues
authors.affiliation: Intenanomat S.L., c/Catedrático José Beltrán 2, 46980 Paterna, Spain.
authors.forename: Pedro J
authors.initials: PJ
authors.lastname: Rodríguez-Cantó
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Alfredo
authors.initials: A
authors.lastname: Segura
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Ana
authors.initials: A
authors.lastname: Cros
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Barcelona, Spain.
authors.forename: Gerard
authors.initials: G
authors.lastname: Tobias
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) , Campus de la UAB, 08193 Bellaterra, Barcelona, Spain.
authors.forename: Enric
authors.initials: E
authors.lastname: Canadell
authors.affiliation: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology, Campus UAB, Bellaterra 08193 Barcelona, Spain.
authors.forename: Pablo
authors.initials: P
authors.lastname: Ordejón
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Juan P
authors.initials: JP
authors.lastname: Martínez-Pastor
authors.affiliation: ICMUV, Instituto de Ciencia de Materiales, Universidad de Valencia , P.O. Box 22085, 46071 Valencia, Spain.
authors.forename: Juan F
authors.initials: JF
authors.lastname: Sánchez-Royo
keywords: Two-dimensional materials; band gap engineering; indium selenide; microphotoluminescence; nanotexturing; optical properties