Role of Nanoelectromechanical Switching in the Operation of Nanostructured Bi2Se3 Interlayers between Conductive Electrodes.
We demonstrate a simple low-cost method of preparation of layered devices for opto- and thermoelectric applications. The devices consist of a functional Bi2Se3 layer of randomly oriented nanoplates and flexible nanobelts enclosed between two flat indium tin oxide (ITO) electrodes. The number of functional interconnections between the ITO electrodes and correspondingly the efficiency of the device can be increased by gradual nanoelectromechanical (NEM) switching of flexible individual Bi2Se3 nanobelts in the circuit. NEM switching is achieved through applying an external voltage to the device. For the first time, we investigate in situ NEM switching and breakdown parameters of Bi2Se3 nanobelts, visualize the processes occurring in the device under the influence of applied external voltage, and establish the limitations to the possible operational conditions.
Institute of Chemical Physics, University of Latvia , 19 Raina Blvd., LV-1586 Riga, Latvia.|Department of Physics and Mathematics, University of Latvia , 25 Zellu Str., LV-1002 Riga, Latvia.
Jelena
J
Kosmaca
Institute of Chemical Physics, University of Latvia , 19 Raina Blvd., LV-1586 Riga, Latvia.
Jana
J
Andzane
Institute of Chemical Physics, University of Latvia , 19 Raina Blvd., LV-1586 Riga, Latvia.|Department of Chemistry, University of Latvia , 1 Jelgavas Str., LV-1004 Riga, Latvia.
Margarita
M
Baitimirova
Department of Microtechnology and Nanoscience, Chalmers University of Technology , SE-41296 Göteborg, Sweden.
Floriana
F
Lombardi
Institute of Chemical Physics, University of Latvia , 19 Raina Blvd., LV-1586 Riga, Latvia.|Department of Chemistry, University of Latvia , 1 Jelgavas Str., LV-1004 Riga, Latvia.
Donats
D
Erts
bismuth selenide; nanobelts; nanoelectromechanical switching; nanostructured interlayers; sandwich device