Vertically Free-Standing Ordered Pb(Zr0.52Ti0.48)O3 Nanocup Arrays by Template-Assisted Ion Beam Etching.
In this report, vertically free-standing lead zirconate titanate Pb(Zr0.52Ti0.48)O3 (PZT) nanocup arrays with good ordering and high density (1.3 × 10(10) cm(-2)) were demonstrated. By a template-assisted ion beam etching (IBE) strategy, the PZT formed in the pore-through anodic aluminum oxide (AAO) membrane on the Pt/Si substrate was with a cup-like nanostructure. The mean diameter and height of the PZT nanocups (NCs) was about 80 and 100 nm, respectively, and the wall thickness of NCs was about 20 nm with a hole depth of about 80 nm. Uppermost, the nanocup structure with low aspect ratio realized vertically free-standing arrays when losing the mechanical support from templates, avoiding the collapse or bundling when compared to the typical nanotube arrays. X-ray diffraction (XRD) and Raman spectrum revealed that the as-prepared PZT NCs were in a perovskite phase. By the vertical piezoresponse force microscopy (VPFM) measurements, the vertically free-standing ordered ferroelectric PZT NCs showed well-defined ring-like piezoresponse phase and hysteresis loops, which indicated that the high-density PZT nanocup arrays could have potential applications in ultra-high non-volatile ferroelectric memories (NV-FRAM) or other nanoelectronic devices.
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Xiaoyan
X
Zhang
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Dan
D
Tang
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Kangrong
K
Huang
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Die
D
Hu
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Fengyuan
F
Zhang
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Xingsen
X
Gao
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.
Xubing
X
Lu
Institute of Electronic Paper Displays, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, Guangdong Province, 510006, China.|Academy of Shenzhen Guohua Optoelectronics, Shenzhen, 518110, China.
Guofu
G
Zhou
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China. zzhang@scnu.edu.cn.
Zhang
Z
Zhang
Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou, 510006, China.|Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, China.
Junming
J
Liu
AAO; Ion beam etching; PZT nanocups; Vertically free-standing