Solution-Processed Donor-Acceptor Polymer Nanowire Network Semiconductors For High-Performance Field-Effect Transistors.
Organic field-effect transistors (OFETs) represent a low-cost transistor technology for creating next-generation large-area, flexible and ultra-low-cost electronics. Conjugated electron donor-acceptor (D-A) polymers have surfaced as ideal channel semiconductor candidates for OFETs. However, high-molecular weight (MW) D-A polymer semiconductors, which offer high field-effect mobility, generally suffer from processing complications due to limited solubility. Conversely, the readily soluble, low-MW D-A polymers give low mobility. We report herein a facile solution process which transformed a lower-MW, low-mobility diketopyrrolopyrrole-dithienylthieno[3,2-b]thiophene (I) into a high crystalline order and high-mobility semiconductor for OFETs applications. The process involved solution fabrication of a channel semiconductor film from a lower-MW (I) and polystyrene blends. With the help of cooperative shifting motion of polystyrene chain segments, (I) readily self-assembled and crystallized out in the polystyrene matrix as an interpenetrating, nanowire semiconductor network, providing significantly enhanced mobility (over 8 cm(2)V(-1)s(-1)), on/off ratio (10(7)), and other desirable field-effect properties that meet impactful OFET application requirements.
Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, P. R. China.
Yanlian
Y
Lei
Research Centre of Excellence, Institute of Creativity and Department of Chemistry, Hong Kong Baptist University, Hong Kong SAR, P. R. China.
Ping
P
Deng
Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602.
Jun
J
Li
Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602.
Ming
M
Lin
Department of Physics and Institute of Advanced Materials, Hong Kong Baptist University, Hong Kong SAR, P. R. China.
Furong
F
Zhu
Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
Tsz-Wai
TW
Ng
Center of Super-Diamond and Advanced Films, Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, P. R. China.
Chun-Sing
CS
Lee
Research Centre of Excellence, Institute of Creativity and Department of Chemistry, Hong Kong Baptist University, Hong Kong SAR, P. R. China.|Department of Materials Science and Engineering, South University of Science and Technology of China, Shenzhen, Guangdong, P.R. China.
Beng S
BS
Ong