Adopting Novel Strategies in Achieving High-Performance Single-Layer Network Structured ZnO Nanorods Thin Film Transistors.
High-performance, solution-processed transparent and flexible zinc oxide (ZnO) nanorods (NRs)-based single layer network structured thin film transistors (TFTs) were developed on polyethylene terephthalate (PET) substrate at 100 °C. Keeping the process-temperature under 100 °C, we have improved the device performance by introducing three low temperature-based techniques; regrowing ZnO to fill the void spaces in a single layer network of ZnO NRs, passivating the back channel with polymer, and adopting ZrO2 as the high-k dielectric. Notably, high-k amorphous ZrO2 was synthesized and deposited using a novel method at an unprecedented temperature of 100 °C. Using these methods, the TFTs exhibited a high mobility of 1.77 cm(2)/V·s. An insignificant reduction of 2.18% in mobility value after 3000 cycles of dynamic bending at a radius of curvature of 20 mm indicated the robust mechanical nature of the flexible ZnO NRs SLNS TFTs.
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Ji-Hyeon
JH
Park
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Jee Ho
JH
Park
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Pranab
P
Biswas
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Do Kyun
do K
Kwon
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Sun Woong
SW
Han
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Hong Koo
HK
Baik
Department of Materials Science and Engineering, Yonsei University , 50 Yonseiro, Seoul, Republic of Korea.
Jae-Min
JM
Myoung
ZnO nanorod; flexible; low temperature; single layer network structure; thin film transistors (TFTs)