Illumination Effect on Bipolar Switching Properties of Gd:SiO2 RRAM Devices Using Transparent Indium Tin Oxide Electrode.
To discuss the optoelectronic effect on resistive random access memory (RRAM) devices, the bipolar switching properties and electron-hole pair generation behavior in the transparent indium tin oxide (ITO) electrode of Gd:SiO2 thin films under the ultraviolet (λ = 400 nm) and red-light (λ = 770 nm) illumination for high resistance state (HRS)/low resistance state (LRS) was observed and investigated. In dark environment, the Gd:SiO2 RRAM devices exhibited the ohmic conduction mechanism for LRS, exhibited the Schottky emission conduction and Poole-Frankel conduction mechanism for HRS. For light illumination effect, the operation current of the Gd:SiO2 RRAM devices for HRS/LRS was slightly increased. Finally, the electron-hole pair transport mechanism, switching conduction diagram, and energy band of the RRAM devices will be clearly demonstrated and explained.
Department of Electrical Engineering and Computer Science, Tung Fang Design Institute, Kaohsiung, Taiwan. d9131802@gmail.com.
Kai-Huang
KH
Chen
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Kuan-Chang
KC
Chang
Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan. tcchang@mail.phys.nsysu.edu.tw.|Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan. tcchang@mail.phys.nsysu.edu.tw.
Ting-Chang
TC
Chang
Department of Materials and Optoelectronic Science, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Tsung-Ming
TM
Tsai
Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Shu-Ping
SP
Liang
Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Tai-Fa
TF
Young
Department of Mechanical and Electro-Mechanical Engineering, National Sun Yat-Sen University, Kaohsiung, Taiwan.
Yong-En
YE
Syu
Advanced Optoelectronics Technology Center, National Cheng Kung University, Tainan, Taiwan.|Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsinchu, Taiwan.
Simon M
SM
Sze
Gadolinium; Illumination effect; Nonvolatile memory; RRAM; Silicon oxide