Sub-kT/q Subthreshold-Slope Using Negative Capacitance in Low-Temperature Polycrystalline-Silicon Thin-Film Transistor.
Realizing a low-temperature polycrystalline-silicon (LTPS) thin-film transistor (TFT) with sub-kT/q subthreshold slope (SS) is significantly important to the development of next generation active-matrix organic-light emitting diode displays. This is the first time a sub-kT/q SS (31.44 mV/dec) incorporated with a LTPS-TFT with polycrystalline-Pb(Zr,Ti)O3 (PZT)/ZrTiO4 (ZTO) gate dielectrics has been demonstrated. The sub-kT/q SS was observed in the weak inversion region at -0.5 V showing ultra-low operating voltage with the highest mobility (250.5 cm(2)/Vsec) reported so far. In addition, the reliability of DC negative bias stress, hot carrier stress and self-heating stress in LTPS-TFT with negative capacitance was investigated for the first time. It was found that the self-heating stress showed accelerated SS degradation due to the PZT Curie temperature.
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Jae Hyo
JH
Park
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Gil Su
GS
Jang
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Hyung Yoon
HY
Kim
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Ki Hwan
KH
Seok
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Hee Jae
HJ
Chae
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Sol Kyu
SK
Lee
Department of Material Science and Engineering, Seoul National University, Seoul 151-742, Republic of Korea.|Eui-San Research Center, Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea.
Seung Ki
SK
Joo