A comprehensive analysis of the (√13  ×  √13)R13.9° type II structure of silicene on Ag(1 1 1).
In this paper, using the same geometrical approach as for the (2  √  3  ×  2  √  3)R30° structure (Jamgotchian et al 2015 J. Phys.: Condens. Matter 27 395002), for the (√13  ×  √13)R13.9° type II structure, we propose an atomic model of the silicene layer based on a periodic relaxation of the strain epitaxy. This relaxation creates periodic arrangements of perfect areas of (√13  ×  √13)R13.9° type II structure surrounded by defect areas. A detailed analysis of the main published experimental results, obtained by scanning tunneling microscopy and by low energy electron diffraction, shows a good agreement with the geometrical model.
Aix-Marseille Université, CNRS, CINaM, UMR 7325, 13288 Marseille, France.
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H
Jamgotchian
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Ealet
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Maradj
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JY
Hoarau
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JP
Bibérian
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Aufray