Physical Modeling of Activation Energy in Organic Semiconductor Devices based on Energy and Momentum Conservations.
Field effect mobility in an organic device is determined by the activation energy. A new physical model of the activation energy is proposed by virtue of the energy and momentum conservation equations. The dependencies of the activation energy on the gate voltage and the drain voltage, which were observed in the experiments in the previous independent literature, can be well explained using the proposed model. Moreover, the expression in the proposed model, which has clear physical meanings in all parameters, can have the same mathematical form as the well-known Meyer-Neldel relation, which lacks of clear physical meanings in some of its parameters since it is a phenomenological model. Thus it not only describes a physical mechanism but also offers a possibility to design the next generation of high-performance optoelectronics and integrated flexible circuits by optimizing device physical parameter.
School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
Ling-Feng
LF
Mao
School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
H
H
Ning
School of Computer and Communication Engineering, University of Science and Technology Beijing, Beijing, 100083, China.
Changjun
C
Hu
Microsystems Engineering, Kate Gleason College of Engineering, Rochester Institute of Technology, Rochester, NY 14623, USA.
Zhaolin
Z
Lu
School of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China.
Gaofeng
G
Wang