Toward High-Performance Top-Gate Ultrathin HfS2 Field-Effect Transistors by Interface Engineering.
Top-gate HfS2 field-effect transistors (FETs) with 5 nm HfO2 as dielectrics are successfully demonstrated, with on/off ratio of 10(5) and subthreshold swing of 95 mV dec(-1) . Moreover, due to the self-functionalization of HfS2 , uniform and ultrathin HfO2 film free of pinhole-like defects could be deposited on HfS2 , which is dramatically different from other transition metal dichalcogenide FETs.
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Kai
K
Xu
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Yun
Y
Huang
Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China.
Bo
B
Chen
Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, P. R. China.
Yang
Y
Xia
School of Electrical, Electronic and Computer EngineeringThe University of Western Australia, 35 Stirling Highway, Crawley, WA, 6009, Australia.
Wen
W
Lei
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Zhenxing
Z
Wang
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Qisheng
Q
Wang
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Feng
F
Wang
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Lei
L
Yin
CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
Jun
J
He
HfO2; HfS2; field-effect transistors; interface engineering