Effect of the [Ba2BO3F]∞ Layer on the Band Gap: Synthesis, Characterization, and Theoretical Studies of BaZn2B2O6·nBa2BO3F (n = 0, 1, 2).
Two new zincoborate fluorides with the common formula BaZn2B2O6·nBa2BO3F (n = 1, 2) have been successfully synthesized for the relationship study between the band gaps and crystal structures in zinc-containing borate fluorides. Ba3Zn2B3O9F with n = 1 in the common formula belongs to the orthorhombic space group Pnma (No. 20), and Ba5Zn2B4O12F2 with n = 2 in the common formula crystallizes in the monoclinic space group C2/c (No. 62). They can both be seen as compounds with the n[Ba2BO3F]∞ (n = 1 or 2) layer inserted in the structure of BaZn2B2O6. UV-vis-near-IR diffuse-reflectance spectra show that the band gaps of BaZn2B2O6·nBa2BO3F (n = 0, 1, 2) gradually increase with more [Ba2BO3F]∞ layers inserted. The first-principles calculation indicates that the inserted n[Ba2BO3F]∞ layers play a positive effect in increasing the band gaps of zincoborate fluorides. Furthermore, the IR spectra, thermal behaviors, and refractive indices of these compounds are also studied.
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS , 40-1 South Beijing Road, Urumqi 830011, China.
Hongping
H
Wu
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS , 40-1 South Beijing Road, Urumqi 830011, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
Xin
X
Su
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS , 40-1 South Beijing Road, Urumqi 830011, China.
Shujuan
S
Han
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS , 40-1 South Beijing Road, Urumqi 830011, China.
Zhihua
Z
Yang
Key Laboratory of Functional Materials and Devices for Special Environments of CAS, Xinjiang Key Laboratory of Electronic Information Materials and Devices, Xinjiang Technical Institute of Physics & Chemistry of CAS , 40-1 South Beijing Road, Urumqi 830011, China.
Shilie
S
Pan