Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.
We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.
School of Advanced Materials Engineering, Kookmin University , Seoul 02707, Korea.
Seonyoung
S
Park
School of Advanced Materials Engineering, Kookmin University , Seoul 02707, Korea.
Seong Yeoul
SY
Kim
School of Advanced Materials Engineering, Kookmin University , Seoul 02707, Korea.
Yura
Y
Choi
Department of Energy Science, Sungkyunkwan University , Suwon 16419, Korea.
Myungjun
M
Kim
Department of Energy Science, Sungkyunkwan University , Suwon 16419, Korea.
Hyunjung
H
Shin
Department of Materials Science and Engineering, University of Texas at Dallas , Richardson, Texas 75080, United States.
Jiyoung
J
Kim
School of Advanced Materials Engineering, Kookmin University , Seoul 02707, Korea.
Woong
W
Choi
Al2O3; MoS2; atomic layer deposition; capacitance−voltage; interface property; ultraviolet/ozone treatment