Flexible MgO Barrier Magnetic Tunnel Junctions.
Flexible MgO barrier magnetic tunnel junction (MTJ) devices are fabricated using a transfer printing process. The flexible MTJ devices yield significantly enhanced tunneling magnetoresistance of ≈300% and improved abruptness of switching, as residual strain in the MTJ structure is released during the transfer process. This approach could be useful for flexible electronic systems that require high-performance memory components.
Department of Electrical and Computer Engineering, NUSNNI, National University of Singapore, Singapore, 117576, Singapore.
Li Ming
LM
Loong
School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Korea.
Wonho
W
Lee
Department of Electrical and Computer Engineering, NUSNNI, National University of Singapore, Singapore, 117576, Singapore.
Xuepeng
X
Qiu
Singapore Synchrotron Light Source, National University of Singapore, 5 Research Link, Singapore, 117603, Singapore.
Ping
P
Yang
Institute of Materials Research and Engineering, 3 Research Link, Singapore, 117602, Singapore.
Hiroyo
H
Kawai
Laboratory for Chemical Technology, Ghent University, Technologiepark 914, 9052, Ghent, Belgium.
Mark
M
Saeys
School of Electrical and Electronic Engineering, Yonsei University, Seoul, 03722, Korea.
Jong-Hyun
JH
Ahn
Department of Electrical and Computer Engineering, NUSNNI, National University of Singapore, Singapore, 117576, Singapore.
Hyunsoo
H
Yang
flexible electronics; magnetic tunnel junctions; spintronics; strain engineering; tunneling magnetoresistance