Emission Characteristics of InGaN/GaN Core-Shell Nanorods Embedded in a 3D Light-Emitting Diode.
We report the selective-area growth of a gallium nitride (GaN)-nanorod-based InGaN/GaN multiple-quantum-well (MQW) core-shell structure embedded in a three-dimensional (3D) light-emitting diode (LED) grown by metalorganic chemical vapor deposition (MOCVD) and its optical analysis. High-resolution transmission electron microscopy (HR-TEM) observation revealed the high quality of the GaN nanorods and the position dependence of the structural properties of the InGaN/GaN MQWs on multiple facets. The excitation and temperature dependences of photoluminescence (PL) revealed the m-plane emission behaviors of the InGaN/GaN core-shell nanorods. The electroluminescence (EL) of the InGaN/GaN core-shell-nanorod-embedded 3D LED changed color from green to blue with increasing injection current. This phenomenon was mainly due to the energy gradient and deep localization of the indium in the selectively grown InGaN/GaN core-shell MQWs on the 3D architecture.
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, 464-8603, Japan.|Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Byung Oh
BO
Jung
Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan. siyoubae@gmail.com.|Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, Aichi, 464-8603, Japan. siyoubae@gmail.com.
Si-Young
SY
Bae
Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, Aichi, 464-8603, Japan.|Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Seunga
S
Lee
Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 305-701, Korea.|Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Korea.
Sang Yun
SY
Kim
Center for Nanomaterials and Chemical Reactions, Institute for Basic Science (IBS), Daejeon, 305-701, Korea.|Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 305-701, Korea.
Jeong Yong
JY
Lee
Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan.|Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Yoshio
Y
Honda
Akasaki Research Center (ARC), Nagoya University, Nagoya, Aichi, 464-8603, Japan.|Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, Aichi, 464-8603, Japan.
Hiroshi
H
Amano
Core-shell structure; Gallium nitride; Light-emitting diodes; Nanorod