Low-Cost and High-Productivity Three-Dimensional Nanocapacitors Based on Stand-Up ZnO Nanowires for Energy Storage.
Highly powered electrostatic capacitors based on nanostructures with a high aspect ratio are becoming critical for advanced energy storage technology because of their high burst power and energy storage capability. We report the fabrication process and the electrical characteristics of high capacitance density capacitors with three-dimensional solid-state nanocapacitors based on a ZnO nanowire template. Stand-up ZnO nanowires are grown face down on p-type Si substrates coated with a ZnO seed layer using a hydrothermal method. Stacks of AlZnO/Al2O3/AlZnO are then deposited sequentially on the ZnO nanowires using atomic layer deposition. The fabricated capacitor has a high capacitance density up to 92 fF/μm(2) at 1 kHz (around ten times that of the planar capacitor without nanowires) and an extremely low leakage current density of 3.4 × 10(-8) A/cm(2) at 2 V for a 5-nm Al2O3 dielectric. Additionally, the charge-discharge characteristics of the capacitor were investigated, indicating that the resistance-capacitance time constants were 550 ns for both the charging and discharging processes and the time constant was not dependent on the voltage. This reflects good power characteristics of the fabricated capacitors. Therefore, the current work provides an exciting strategy to fabricate low-cost and easily processable, high capacitance density capacitors for energy storage.
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Lei
L
Wei
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Qi-Xuan
QX
Liu
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Bao
B
Zhu
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Wen-Jun
WJ
Liu
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China. sjding@fudan.edu.cn.
Shi-Jin
SJ
Ding
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Hong-Liang
HL
Lu
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
Anquan
A
Jiang
State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, People's Republic of China.
David Wei
DW
Zhang
Capacitance density; Energy storage; Nanocapacitors; Three dimensional; ZnO nanowires