Disturbance characteristics of half-selected cells in a cross-point resistive switching memory array.
Disturbance characteristics of cross-point resistive random access memory (RRAM) arrays are comprehensively studied in this paper. An analytical model is developed to quantify the number of pulses (#Pulse) the cell can bear before disturbance occurs under various sub-switching voltage stresses based on physical understanding. An evaluation methodology is proposed to assess the disturb behavior of half-selected (HS) cells in cross-point RRAM arrays by combining the analytical model and SPICE simulation. The characteristics of cross-point RRAM arrays such as energy consumption, reliable operating cycles and total error bits are evaluated by the methodology. A possible solution to mitigate disturbance is proposed.
Institute of Microelectronics, Peking University, Beijing 100871, People's Republic of China.
Zhe
Z
Chen
Haitong
H
Li
Hong-Yu
HY
Chen
Bing
B
Chen
Rui
R
Liu
Peng
P
Huang
Feifei
F
Zhang
Zizhen
Z
Jiang
Hongfei
H
Ye
Bin Gao
Lifeng
L
Liu
Xiaoyan
X
Liu
Jinfeng
J
Kang
H-S Philip
HS
Wong
Shimeng
S
Yu