A High-Performance WSe2 /h-BN Photodetector using a Triphenylphosphine (PPh3 )-Based n-Doping Technique.
The effects of triphenylphosphine (PPh3 )-based n-doping and hexagonal boron nitride (h-BN) insertion on a tungsten diselenide (WSe2 ) photodetector are systematically studied, and a very high performance WSe2 /h-BN heterostucture-based photodetector is demonstrated with a record photoresponsivity (1.27 × 10(6) A W(-1) ) and temporal photoresponse (rise time: 2.8 ms, decay time: 20.8 ms) under 520 nm wavelength and 5 pW power laser illumination.
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Seo-Hyeon
SH
Jo
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Dong-Ho
DH
Kang
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Jaewoo
J
Shim
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
Jaeho
J
Jeon
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
Min Hwan
MH
Jeon
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Gwangwe
G
Yoo
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Jinok
J
Kim
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Jaehyeong
J
Lee
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
Geun Young
GY
Yeom
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, South Korea.
Sungjoo
S
Lee
School of Electrical Engineering, Korea University, Seoul, 136-701, South Korea.
Hyun-Yong
HY
Yu
Division of Materials Science and Engineering, Hanyang University, Seoul, 133-791, South Korea.
Changhwan
C
Choi
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
Jin-Hong
JH
Park
PPh3; WSe2; nondegenerate doping; photodetectors; type-converted FET