Flexible Hybrid Organic-Inorganic Perovskite Memory.
Active research has been done on hybrid organic-inorganic perovskite materials for application to solar cells with high power conversion efficiency. However, this material often shows hysteresis, which is undesirable, shift in the current-voltage curve. The hysteresis may come from formation of defects and their movement in perovskite materials. Here, we utilize the defects in perovskite materials to be used in memory operations. We demonstrate flexible nonvolatile memory devices based on hybrid organic-inorganic perovskite as the resistive switching layer on a plastic substrate. A uniform perovskite layer is formed on a transparent electrode-coated plastic substrate by solvent engineering. Flexible nonvolatile memory based on the perovskite layer shows reproducible and reliable memory characteristics in terms of program/erase operations, data retention, and endurance properties. The memory devices also show good mechanical flexibility. It is suggested that resistive switching is done by migration of vacancy defects and formation of conducting filaments under the electric field in the perovskite layer. It is believed that organic-inorganic perovskite materials have great potential to be used in high-performance, flexible memory devices.
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea.
Chungwan
C
Gu
Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH) , Pohang 790-784, Republic of Korea.
Jang-Sik
JS
Lee
flexible memory; inorganic−organic perovskites; resistive switching memory; solvent engineering; vacancy migration