Partial Oxidized Arsenene: Emerging Tunable Direct Bandgap Semiconductor.
Arsenene, as a member of the Group V elemental two-dimensional materials appears on the horizon, has shown great prospects. However, its indirect bandgap limits the applications in optoelectronics. In this theoretical work, we reported that partial oxidation can tune the indirect bandgap of arsenene into the direct one. Attributed to the enthalpy decreasing linear to the oxygen ratio, partial oxidized arsenene can be controllably produced by the progressive oxidation under low temperature. Importantly, by increasing the oxygen content from 1O/18As to 18O/18As, the oxidation can narrow the direct bandgap of oxidized arsenene from 1.29 to 0.02 eV. The bandgap of partial oxidized arsenene is proportional to the oxygen content. Consequently, the partial oxidized arsenene with tunable direct bandgap has great potentials in the high efficient infra light emitter and photo-voltaic devices.
School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
Yu-Jiao
YJ
Wang
School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK.
Kai-Ge
KG
Zhou
School of Physics and Astronomy, The University of Manchester, Manchester, M13 9PL, UK.
Geliang
G
Yu
College of Chemical Engineering, Zhejiang University of Technology, Hangzhou, 310014, China.
Xing
X
Zhong
College of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, 730000, China.
Hao-Li
HL
Zhang