Fully Solution-Processed and Foldable Metal-Oxide Thin-Film Transistor.
Flexible and foldable thin-film transistors (TFTs) have been widely studied with the objective of achieving high-performance and low-cost flexible TFTs for next-generation displays. In this study, we introduced the fabrication of foldable TFT devices with excellent mechanical stability, high transparency, and high performance by a fully solution process including PI, YOx, In2O3, SWCNTs, IL-PVP, and Ag NWs. The fabricated fully solution-processed TFTs showed a higher transmittance above 86% in the visible range. Additionally, the charge-carrier mobility and Ion/Ioff ratio of them were 7.12 ± 0.43 cm(2)/V·s and 5.53 ± 0.82 × 10(5) at a 3 V low voltage operating, respectively. In particular, the fully solution-processed TFTs showed good electrical characteristics under tensile strain with 1 mm bending and even extreme folding up to a strain of 26.79%. Due to the good compatibility of each component layer, it maintained the charge-carrier mobility over 79% of initial devices after 5,000 cycles of folding test in both the parallel and perpendicular direction with a bending radius of 1 mm. These results show the potential of the fully solution-processed TFTs as flexible TFTs for a next generation devices because of the robust mechanical flexibility, transparency, and high electrical performance of it.
Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Su Jeong
SJ
Lee
Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University , Seoul 151-742, Republic of Korea.
Jieun
J
Ko
Department of Chemical and Biomolecular Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Ki-Ho
KH
Nam
Department of Chemical and Biomolecular Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Taehee
T
Kim
Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Sang Hoon
SH
Lee
LG Display LCD Research and Development Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea.
Jung Han
JH
Kim
LG Display LCD Research and Development Center, 245 Lg-ro, Wollong-myeon, Paju-si, Gyeonggi-do 413-811, Korea.
Gee Sung
GS
Chae
Department of Chemical and Biomolecular Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Hs
H
Han
Program in Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University , Seoul 151-742, Republic of Korea.|Advanced Institutes of Convergence Technology , Yeongtong-gu, 864-1 Iui-dong, Suwon-si, Gyeonggi-do 443-270, Republic of Korea.
Youn Sang
YS
Kim
Department of Materials Science and Engineering, Yonsei University , Seoul 120-749, Republic of Korea.
Jae-Min
JM
Myoung
flexible; folding; integration; solution-process; thin-film transistors