Black Phosphorus Based Field Effect Transistors with Simultaneously Achieved Near Ideal Subthreshold Swing and High Hole Mobility at Room Temperature.
Black phosphorus (BP) has emerged as a promising two-dimensional (2D) material for next generation transistor applications due to its superior carrier transport properties. Among other issues, achieving reduced subthreshold swing and enhanced hole mobility simultaneously remains a challenge which requires careful optimization of the BP/gate oxide interface. Here, we report the realization of high performance BP transistors integrated with HfO2 high-k gate dielectric using a low temperature CMOS process. The fabricated devices were shown to demonstrate a near ideal subthreshold swing (SS) of ~69 mV/dec and a room temperature hole mobility of exceeding >400 cm(2)/Vs. These figure-of-merits are benchmarked to be the best-of-its-kind, which outperform previously reported BP transistors realized on traditional SiO2 gate dielectric. X-ray photoelectron spectroscopy (XPS) analysis further reveals the evidence of a more chemically stable BP when formed on HfO2 high-k as opposed to SiO2, which gives rise to a better interface quality that accounts for the SS and hole mobility improvement. These results unveil the potential of black phosphorus as an emerging channel material for future nanoelectronic device applications.
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Xinke
X
Liu
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
Kah-Wee
KW
Ang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, People Republic of China.
Wenjie
W
Yu
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Jiazhu
J
He
Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
Xuewei
X
Feng
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, People Republic of China.
Qiang
Q
Liu
Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen, 518055, People Republic of China.
He
H
Jiang
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Dan Tang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, People Republic of China.
Jiao
J
Wen
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Youming
Y
Lu
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Wenjun
W
Liu
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Peijiang
P
Cao
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Shun
S
Han
Institute of Materials research and Engineering (IMRE), 2 Fusionopolis Way, Innovis, #08-03, 138634, Singapore.
Jing
J
Wu
Department of Microelectronics, Fudan University, 220 Handan Road, Shanghai, 200433, People Republic of China.
Wenjun
W
Liu
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Chang Ning Road, Shanghai, 200050, People Republic of China.
Xi
X
Wang
College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Nanshan District Key Lab for Biopolymer and Safety Evaluation, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, People Republic of China.
Deliang
D
Zhu
Department of Materials Science and Engineering, South University of Science and Technology of China, 1088 Xueyuan Road, Shenzhen, 518055, People Republic of China.
Zhubing
Z
He