High performance MoS2-based field-effect transistor enabled by hydrazine doping.
We investigated the n-type doping effect of hydrazine on the electrical characteristics of a molybdenum disulphide (MoS2)-based field-effect transistor (FET). The threshold voltage of the MoS2 FET shifted towards more negative values (from -20 to -70 V) on treating with 100% hydrazine solution with the channel current increasing from 0.5 to 25 μA at zero gate bias. The inverse subthreshold slope decreased sharply on doping, while the ON/OFF ratio increased by a factor of 100. Gate-channel coupling improved with doping, which facilitates the reduction of channel length between the source and drain electrodes without compromising on the transistor performance, making the MoS2-based FET easily scalable.
School of Electronic and Electrical Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Korea.
Dongsuk
D
Lim
E S
ES
Kannan
Inyeal
I
Lee
Servin
S
Rathi
Lijun
L
Li
Yoontae
Y
Lee
Muhammad Atif
MA
Khan
Moonshik
M
Kang
Jinwoo
J
Park
Gil-Ho
GH
Kim