title: Layer Engineering of 2D Semiconductor Junctions.
abstract: A new concept for junction fabrication by connecting multiple regions with varying layer thicknesses, based on the thickness dependence, is demonstrated. This type of junction is only possible in super-thin-layered 2D materials, and exhibits similar characteristics as p-n junctions. Rectification and photovoltaic effects are observed in chemically homogeneous MoSe2 junctions between domains of different thicknesses.
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.|School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China.
authors.forename: Yongmin
authors.initials: Y
authors.lastname: He
authors.affiliation: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Sobhani
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Sidong
authors.initials: S
authors.lastname: Lei
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.|State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, P. R. China.
authors.forename: Zhuhua
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Department of Chemistry, Rice University, Houston, TX, 77005, USA.
authors.forename: Yongji
authors.initials: Y
authors.lastname: Gong
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Zehua
authors.initials: Z
authors.lastname: Jin
authors.affiliation: Materials Science & Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.
authors.forename: Wu
authors.initials: W
authors.lastname: Zhou
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Yingchao
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Xifan
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Boris
authors.initials: B
authors.lastname: Yakobson
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Robert
authors.initials: R
authors.lastname: Vajtai
authors.affiliation: Department of Electrical and Computer Engineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Naomi J
authors.initials: NJ
authors.lastname: Halas
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Bo
authors.initials: B
authors.lastname: Li
authors.affiliation: School of Physical Science and Technology, Lanzhou University, Lanzhou, Gansu, 730000, P. R. China.
authors.forename: Erqing
authors.initials: E
authors.lastname: Xie
authors.affiliation: Department of Materials Science and NanoEngineering, Rice University, Houston, TX, 77005, USA.
authors.forename: Pulickel
authors.initials: P
authors.lastname: Ajayan
keywords: 2D semiconductor junctions; layer engineering; multilayer MoSe2; photovoltaic effects; rectification effects