title: Flexible Nonvolatile Polymer Memory Array on Plastic Substrate via Initiated Chemical Vapor Deposition.
abstract: Resistive random access memory based on polymer thin films has been developed as a promising flexible nonvolatile memory for flexible electronic systems. Memory plays an important role in all modern electronic systems for data storage, processing, and communication; thus, the development of flexible memory is essential for the realization of flexible electronics. However, the existing solution-processed, polymer-based RRAMs have exhibited serious drawbacks in terms of the uniformity, electrical stability, and long-term stability of the polymer thin films. Here, we present poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3)-based RRAM arrays fabricated via the solvent-free technique called initiated chemical vapor deposition (iCVD) process for flexible memory application. Because of the outstanding chemical stability of pV3D3 films, the pV3D3-RRAM arrays can be fabricated by a conventional photolithography process. The pV3D3-RRAM on flexible substrates showed unipolar resistive switching memory with an on/off ratio of over 10(7), stable retention time for 10(5) s, excellent cycling endurance over 10(5) cycles, and robust immunity to mechanical stress. In addition, pV3D3-RRAMs showed good uniformity in terms of device-to-device distribution. The pV3D3-RRAM will pave the way for development of next-generation flexible nonvolatile memory devices.
authors.affiliation: School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Byung Chul
authors.initials: BC
authors.lastname: Jang
authors.affiliation: Department of Chemical and Biomolecular Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Hyejeong
authors.initials: H
authors.lastname: Seong
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Sung Kyu
authors.initials: SK
authors.lastname: Kim
authors.affiliation: School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Jong Yun
authors.initials: JY
authors.lastname: Kim
authors.affiliation: School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Beom Jun
authors.initials: BJ
authors.lastname: Koo
authors.affiliation: Department of Chemical and Biomolecular Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Junhwan
authors.initials: J
authors.lastname: Choi
authors.affiliation: School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Sang Yoon
authors.initials: SY
authors.lastname: Yang
authors.affiliation: Department of Chemical and Biomolecular Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Sung Gap
authors.initials: SG
authors.lastname: Im
authors.affiliation: School of Electrical Engineering, Graphene Research Center, Korea Advanced Institute of Science and Technology (KAIST) , Daejeon 34141, Korea.
authors.forename: Sung-Yool
authors.initials: SY
authors.lastname: Choi
keywords: Cu filament; flexible memory; highly cross-linked-polymer; initiated chemical vapor deposition (iCVD); polymer RRAM