title: Influences of Si-doped graded short-period superlattice on green InGaN/GaN light-emitting diodes.
abstract: We report significant improvement in optical and electrical properties of green InGaN/GaN light-emitting diodes (LEDs) by using Si-doped graded short-period InGaN/GaN superlattice (SiGSL) formed by so called indium-conversion technique. For comparison, a conventional LED without the superlattice (C-LED) and a LED with undoped graded superlattice (unGSL-LED) were prepared, respectively. The photoluminescence (PL) intensity of the SiGSL-LED was increased more than 3 times at room temperature (RT) as compared to C-LED. The PL intensity ratios of RT to 10K for the C-LED, unGSL-LED, and SiGSL-LED were measured to be 25, 40.9, and 47.5%, respectively. The difference in carrier lifetimes between 10K and RT for the SiGSL-LED is relatively small compared to that of the C-LED, which is consistent with the variation in PL intensity. The output power of a transistor-outline type SiGSL-LED was increased more than 2 times higher than that of the C-LED.
authors.forename: Kwanjae
authors.initials: K
authors.lastname: Lee
authors.forename: Cheul-Ro
authors.initials: CR
authors.lastname: Lee
authors.forename: Jin Hong
authors.initials: JH
authors.lastname: Lee
authors.forename: Tae-Hoon
authors.initials: TH
authors.lastname: Chung
authors.forename: Mee-Yi
authors.initials: MY
authors.lastname: Ryu
authors.forename: Kwang-Un
authors.initials: KU
authors.lastname: Jeong
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Leem
authors.forename: Jin Soo
authors.initials: JS
authors.lastname: Kim