title: Plasmonic-Field Interactions at Nanoparticle Interfaces for Infrared Thermal-Shielding Applications Based on Transparent Oxide Semiconductors.
abstract: This paper describes infrared plasmonic responses in three-dimensional (3D) assembled films of In2O3:Sn nanoparticles (NPs). The introduction of surface modifications to NPs can facilitate the production of electric-field interactions between NPs due to the creation of narrow crevices in the NP interfaces. In particular, the electric-field interactions along the in-plane and out-of-plane directions in the 3D assembled NP films allow for resonant splitting of plasmon excitations to the quadrupole and dipole modes, thereby realizing selective high reflections in the near- and mid-infrared range, respectively. The origins of these plasmonic properties were revealed from electric-field distributions calculated by electrodynamic simulations that agreed well with experimental results. The interparticle gaps and their derived plasmon couplings play an important role in producing high reflective performances in assembled NP films. These 3D assemblies of NPs can be further extended to produce large-size flexible films with high infrared reflectance, which simultaneously exhibit microwave transmittance essential for telecommunications. This study provides important insights for harnessing infrared optical responses using plasmonic technology for the fabrication of infrared thermal-shielding applications.
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Matsui
authors.affiliation: Tomoe Work Co. Ltd , 1-3-6 Namiyoke, Minato-ku, Osaka 552-0001, Japan.
authors.forename: Shinya
authors.initials: S
authors.lastname: Furuta
authors.affiliation: Central Customs Laboratory, Ministry of Finance , 5-3-6 Kashiwanoha, Kashiwa, Chiba 277-0882, Japan.
authors.forename: Takayuki
authors.initials: T
authors.lastname: Hasebe
authors.forename: Hitoshi
authors.initials: H
authors.lastname: Tabata
keywords: nanoparticle; near-infrared and thermal-shielding; plasmon coupling; transparent oxide semiconductor