title: Demonstration of a III-nitride edge-emitting laser diode utilizing a GaN tunnel junction contact.
abstract: We demonstrate a III-nitride edge emitting laser diode (EELD) grown on a (2021) bulk GaN substrate with a GaN tunnel junction contact for hole injection. The tunnel junction was grown using a combination of metal-organic chemical-vapor deposition (MOCVD) and ammonia-based molecular-beam epitaxy (MBE) which allowed to be regrown over activated p-GaN. For a laser bar with dimensions of 1800 µm x 2.5 µm, without facet coatings, the threshold current was 284 mA (6.3 kA/cm2) and the single facet slope efficiency was 0.33 W/A (12% differential efficiency). A differential resistivity at high current density of 2.3 × 10-4Ω cm2was measured.
authors.forename: Benjamin P
authors.initials: BP
authors.lastname: Yonkee
authors.forename: Erin C
authors.initials: EC
authors.lastname: Young
authors.forename: Changmin
authors.initials: C
authors.lastname: Lee
authors.forename: John T
authors.initials: JT
authors.lastname: Leonard
authors.forename: Steven P
authors.initials: SP
authors.lastname: DenBaars
authors.forename: James S
authors.initials: JS
authors.lastname: Speck
authors.forename: Shuji
authors.initials: S
authors.lastname: Nakamura