title: Extended x-ray absorption fine structure measurements on radio frequency magnetron sputtered HfO2thin films deposited with different oxygen partial pressures.
abstract: Two sets of HfO2thin film have been deposited by the radio frequency magnetron sputtering technique at various oxygen partial pressures, one set without any substrate bias and another set with a 50 W pulsed dc substrate bias. The films have been characterized by extended x-ray absorption fine structure (EXAFS) measurements at the Hf L3edge, and the structural information obtained from analysis of the EXAFS data has been used to explain the macroscopic behavior of the refractive index obtained from spectroscopic ellipsometry measurements. It has been observed that the variation of refractive index with oxygen partial pressure depends on the Hf-Hf bond length for the set of films deposited without substrate bias, while for the other set of films deposited with pulsed dc substrate bias, it depends on the oxygen coordination of the nearest neighbor shell surrounding Hf sites.
authors.forename: S
authors.initials: S
authors.lastname: Maidul Haque
authors.forename: C
authors.initials: C
authors.lastname: Nayak
authors.forename: Dibyendu
authors.initials: D
authors.lastname: Bhattacharyya
authors.forename: S N
authors.initials: SN
authors.lastname: Jha
authors.forename: N K
authors.initials: NK
authors.lastname: Sahoo