title: High sensitivity measurement system for the direct-current, capacitance-voltage, and gate-drain low frequency noise characterization of field effect transistors.
abstract: Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.
authors.affiliation: University of Messina, I-98166 Messina, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Giusi
authors.affiliation: University of Messina, I-98166 Messina, Italy.
authors.forename: O
authors.initials: O
authors.lastname: Giordano
authors.affiliation: University of Messina, I-98166 Messina, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Scandurra
authors.affiliation: IMM-CNR, I-00133 Rome, Italy.
authors.forename: M
authors.initials: M
authors.lastname: Rapisarda
authors.affiliation: IMM-CNR, I-00133 Rome, Italy.
authors.forename: S
authors.initials: S
authors.lastname: Calvi
authors.affiliation: University of Messina, I-98166 Messina, Italy.
authors.forename: C
authors.initials: C
authors.lastname: Ciofi