title: Nanowires: Enhanced Optoelectronic Performance of a Passivated Nanowire-Based Device: Key Information from Real-Space Imaging Using 4D Electron Microscopy (Small 17/2016).
abstract: Selective mapping of surface charge carrier dynamics of InGaN nanowires before and after surface passivation with octadecylthiol (ODT) is reported by O. F. Mohammed and co-workers on page 2313, using scanning ultrafast electron microscopy. In a typical experiment, the 343 nm output of the laser beam is used to excite the microscope tip to generate pulsed electrons for probing, and the 515 nm output is used as a clocking excitation pulse to initiate dynamics. Time-resolved images demonstrate clearly that carrier recombination is significantly slowed after ODT treatment, which supports the efficient removal of surface trap states.
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Jafar I
authors.initials: JI
authors.lastname: Khan
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Aniruddha
authors.initials: A
authors.lastname: Adhikari
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Jingya
authors.initials: J
authors.lastname: Sun
authors.affiliation: Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Davide
authors.initials: D
authors.lastname: Priante
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Riya
authors.initials: R
authors.lastname: Bose
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Basamat S
authors.initials: BS
authors.lastname: Shaheen
authors.affiliation: Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Tien Khee
authors.initials: TK
authors.lastname: Ng
authors.affiliation: Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhao
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Osman M
authors.initials: OM
authors.lastname: Bakr
authors.affiliation: Photonics Laboratory, Computer, Electrical, and Mathematical Sciences and Engineering KAUST, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Boon S
authors.initials: BS
authors.lastname: Ooi
authors.affiliation: Solar and Photovoltaics Engineering Research Center, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Omar F
authors.initials: OF
authors.lastname: Mohammed
keywords: 4D ultrafast microscopy; InGaN nanowires; carrier recombination; charge carrier dynamics; passivation