title: Gate-Tunable Spin-Charge Conversion and the Role of Spin-Orbit Interaction in Graphene.
abstract: The small spin-orbit interaction of carbon atoms in graphene promises a long spin diffusion length and the potential to create a spin field-effect transistor. However, for this reason, graphene was largely overlooked as a possible spin-charge conversion material. We report electric gate tuning of the spin-charge conversion voltage signal in single-layer graphene. Using spin pumping from an yttrium iron garnet ferrimagnetic insulator and ionic liquid top gate, we determined that the inverse spin Hall effect is the dominant spin-charge conversion mechanism in single-layer graphene. From the gate dependence of the electromotive force we showed the dominance of the intrinsic over Rashba spin-orbit interaction, a long-standing question in graphene research.
authors.affiliation: Graduate School of Engineering Science, Osaka University, Toyonaka 560-8531, Japan.|Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Dushenko
authors.affiliation: Institute for Material Chemistry and Engineering, Kyushu University, Fukuoka 816-8508, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Ago
authors.affiliation: Institute for Material Chemistry and Engineering, Kyushu University, Fukuoka 816-8508, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Kawahara
authors.affiliation: Graduate School of Engineering, Osaka University, Suita 565-0871, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Tsuda
authors.affiliation: Graduate School of Engineering, Osaka University, Suita 565-0871, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Kuwabata
authors.affiliation: School of Advanced Science and Engineering, Waseda University, Tokyo 169-8555, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Takenobu
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Shinjo
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Ando
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, Kyoto 615-8510, Japan.
authors.forename: M
authors.initials: M
authors.lastname: Shiraishi