title: Low lateral divergence 2 μm InGaSb/ AlGaAsSb broad-area quantum well lasers.
abstract: High power and high brightness mid-infrared GaSb based lasers are desired for many applications, however, the high lateral divergence is still the influence factor for practical application. In this paper, a simple and effective approach based on the fishbone-shape microstructure was proposed, the effective improvement on both the lateral divergence and output power of 2 μm GaSb based broad-area lasers was demonstrated. The lateral divergence is reduced averagely by 55% and 15.8° for 95% power content is realized. The continuous-wave emission power is increased about 19% with the decreased threshold current. The other merits for this microstructure are the unchanged intrinsic characteristic of broad-area lasers and the low cost fabrication.
authors.forename: Jiamin
authors.initials: J
authors.lastname: Rong
authors.forename: Enbo
authors.initials: E
authors.lastname: Xing
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Lijie
authors.initials: L
authors.lastname: Wang
authors.forename: Shili
authors.initials: S
authors.lastname: Shu
authors.forename: Sicong
authors.initials: S
authors.lastname: Tian
authors.forename: Cunzhu
authors.initials: C
authors.lastname: Tong
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Chai
authors.forename: Yingqiang
authors.initials: Y
authors.lastname: Xu
authors.forename: Haiqiao
authors.initials: H
authors.lastname: Ni
authors.forename: Zhichuan
authors.initials: Z
authors.lastname: Niu
authors.forename: Lijun
authors.initials: L
authors.lastname: Wang