title: MEMS Young's Modulus and Step Height Measurements With Round Robin Results.
abstract: This paper presents the results of a microelectromechanical systems (MEMS) Young's modulus and step height round robin experiment, completed in April 2009, which compares Young's modulus and step height measurement results at a number of laboratories. The purpose of the round robin was to provide data for the precision and bias statements of two \ related Semiconductor Equipment and Materials International (SEMI) standard test methods for MEMS. The technical basis for the test methods on Young's modulus and step height measurements are also provided in this paper. Using the same test method, the goal of the round robin was to assess the repeatability of measurements at one laboratory, by the same operator, with the same equipment, in the shortest practical period of time as well as the reproducibility of measurements with independent data sets from unique combinations of measurement setups and researchers. Both the repeatability and reproducibility measurements were done on random test structures made of the same homogeneous material. The average repeatability Young's modulus value (as obtained from resonating oxide cantilevers) was 64.2 GPa with 95 % limits of ± 10.3 % and an average combined standard uncertainty value of 3.1 GPa. The average reproducibility Young's modulus value was 62.8 GPa with 95 % limits of ± 11.0 % and an average combined standard uncertainty value of 3.0 GPa. The average repeatability step height value (for a metal2-over-poly1 step from active area to field oxide) was 0.477 μm with 95 % limits of 7.9 % and an average combined standard uncertainty value of 0.014 μm. The average reproducibility step height value was 0.481 μm with 95 % limits of ± 6.2 % and an average combined standard uncertainty value of 0.014 μm. In summary, this paper demonstrates that a reliable methodology can be used to measure Young's modulus and step height. Furthermore, a micro and nano technology (MNT) 5-in-1 standard reference material (SRM) can be used by industry to compare their in-house measurements using this methodology with NIST measurements thereby validating their use of the documentary standards.
authors.affiliation: Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8120.
authors.forename: Janet
authors.initials: J
authors.lastname: Marshall
authors.affiliation: Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8120.
authors.forename: Richard A
authors.initials: RA
authors.lastname: Allen
authors.affiliation: Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8120.
authors.forename: Craig D
authors.initials: CD
authors.lastname: McGray
authors.affiliation: Semiconductor Electronics Division, National Institute of Standards and Technology, Gaithersburg, MD 20899-8120.
authors.forename: Jon
authors.initials: J
authors.lastname: Geist
keywords: Young’s modulus; interferometry; microelectromechanical systems; round robin; standard test methods; step height; test structure; vibrometry