title: Gate-Tunable Atomically Thin Lateral MoS2 Schottky Junction Patterned by Electron Beam.
abstract: Among atomically thin two-dimensional (2D) materials, molybdenum disulfide (MoS2) is attracting considerable attention because of its direct bandgap in the 2H-semiconducting phase. On the other hand, a 1T-metallic phase has been revealed, bringing complementary application. Recently, thanks to top-down fabrication using electron beam (EB) irradiation techniques, in-plane 1T-metal/2H-semiconductor lateral (Schottky) MoS2 junctions were demonstrated, opening a path toward the co-integration of active and passive two-dimensional devices. Here, we report the first transport measurements evidencing the formation of a MoS2 Schottky barrier (SB) junction with barrier height of 0.13-0.18 eV created at the interface between EB-irradiated (1T)/nonirradiated (2H) regions. Our experimental findings, supported by state-of-the-art simulation, reveal unique device fingerprint of SB-based field-effect transistors made from atom-thin 1T layers.
authors.forename: Y
authors.initials: Y
authors.lastname: Katagiri
authors.affiliation: Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Nakamura
authors.forename: A
authors.initials: A
authors.lastname: Ishii
authors.forename: C
authors.initials: C
authors.lastname: Ohata
authors.forename: M
authors.initials: M
authors.lastname: Hasegawa
authors.affiliation: Institute for Solid State Physics, The University of Tokyo , 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan.
authors.forename: S
authors.initials: S
authors.lastname: Katsumoto
authors.affiliation: Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
authors.forename: T
authors.initials: T
authors.lastname: Cusati
authors.affiliation: CNR-ICCOM , via Giuseppe Moruzzi 1, 56124 Pisa, Italy.
authors.forename: A
authors.initials: A
authors.lastname: Fortunelli
authors.affiliation: Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Iannaccone
authors.affiliation: Dipartimento di Ingegneria dell'Informazione, Università di Pisa , Via G. Caruso, 16, Pisa 56122, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Fiori
authors.affiliation: Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and The Barcelona Institute of Science and Technology , Campus UAB, Bellaterra, 08193 Barcelona, Spain.|ICREA, Institució Catalana de Recerca i Estudis Avançats , 08070 Barcelona, Spain.
authors.forename: S
authors.initials: S
authors.lastname: Roche
authors.forename: J
authors.initials: J
authors.lastname: Haruyama
keywords: 1T phase; Atomically thin layers; Schottky junction; electron-beam irradiation; semiconductor−metal transition