title: Gate-Tunable Spin Transport and Giant Electroresistance in Ferromagnetic Graphene Vertical Heterostructures.
abstract: Controlling tunneling properties through graphene vertical heterostructures provides advantages in achieving large conductance modulation which has been known as limitation in lateral graphene device structures. Despite of intensive research on graphene vertical heterosturctures for recent years, the potential of spintronics based on graphene vertical heterostructures remains relatively unexplored. Here, we present an analytical device model for graphene-based spintronics by using ferromagnetic graphene in vertical heterostructures. We consider a normal or ferroelectric insulator as a tunneling layer. The device concept yields a way of controlling spin transport through the vertical heterostructures, resulting in gate-tunable spin-switching phenomena. Also, we revealed that a 'giant' resistance emerges through a ferroelectric insulating layer owing to the anti-parallel configuration of ferromagnetic graphene layers by means of electric fields via gate and bias voltages. Our findings discover the prospect of manipulating the spin transport properties in vertical heterostructures without use of magnetic fields.
authors.affiliation: Department of Material Science and Engineering, University of Ioannina, Ioannina 45110, Greece.|Center for Theoretical Physics of Complex Systems, Institute for Basic Science, Daejeon 34051, Republic of Korea.
authors.forename: Nojoon
authors.initials: N
authors.lastname: Myoung
authors.affiliation: Center for Theoretical Physics of Complex Systems, Institute for Basic Science, Daejeon 34051, Republic of Korea.
authors.forename: Hee Chul
authors.initials: HC
authors.lastname: Park
authors.affiliation: Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.
authors.forename: Seung Joo
authors.initials: SJ
authors.lastname: Lee