title: Electron Mobility Exceeding 10 cm(2) V(-1) s(-1) and Band-Like Charge Transport in Solution-Processed n-Channel Organic Thin-Film Transistors.
abstract: Solution-processed n-channel organic thin-film transistors (OTFTs) that exhibit a field-effect mobility as high as 11 cm(2) V(-1) s(-1) at room temperature and a band-like temperature dependence of electron mobility are reported. By comparison of solution-processed OTFTs with vacuum-deposited OTFTs of the same organic semiconductor, it is found that grain boundaries are a key factor inhibiting band-like charge transport.
authors.affiliation: Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
authors.forename: Xiaomin
authors.initials: X
authors.lastname: Xu
authors.affiliation: Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China.
authors.forename: Yifan
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
authors.forename: Bowen
authors.initials: B
authors.lastname: Shan
authors.affiliation: Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Gu
authors.affiliation: Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
authors.forename: Danqing
authors.initials: D
authors.lastname: Liu
authors.affiliation: Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China.
authors.forename: Jinyu
authors.initials: J
authors.lastname: Liu
authors.affiliation: Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.|Institute of Molecular Functional Materials, Area of Excellence Scheme, University Grants Committee, Hong Kong, China.
authors.forename: Jianbin
authors.initials: J
authors.lastname: Xu
authors.affiliation: Department of Electronic Engineering, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.
authors.forename: Ni
authors.initials: N
authors.lastname: Zhao
authors.affiliation: Institute of Chemistry, Chinese Academy of Sciences, Zhongguancun North First Street 2, 100190, Beijing, China.|Department of Chemistry, School of Science, Tianjin University, Tianjin, 300072, China.
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
authors.affiliation: Department of Chemistry, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong, China.|Institute of Molecular Functional Materials, Area of Excellence Scheme, University Grants Committee, Hong Kong, China.
authors.forename: Qian
authors.initials: Q
authors.lastname: Miao
keywords: charge transport; electron mobility; organic semiconductors; organic thin-film transistors; temperature