title: Color tunable monolithic InGaN/GaN LED having a multi-junction structure.
abstract: In this study, we have fabricated a blue-green color-tunable monolithic InGaN/GaN LED having a multi-junction structure with three terminals. The device has an n-p-n structure consisting of a green and a blue active region, i.e., an n-GaN / blue-MQW / p-GaN / green-MQW / n-GaN / Al2O3structure with three terminals for independently controlling the two active regions. To realize this LED structure, a typical LED consisting of layers of n-GaN, blue MQW, and p-GaN is regrown on a conventional green LED by using a metal organic chemical vapor deposition (MOCVD) method. We explain detailed mechanisms of three operation modes which are the green, blue, and cyan mode. Moreover, we discuss optical properties of the device.
authors.forename: Duk-Jo
authors.initials: DJ
authors.lastname: Kong
authors.forename: Chang-Mo
authors.initials: CM
authors.lastname: Kang
authors.forename: Jun-Yeob
authors.initials: JY
authors.lastname: Lee
authors.forename: James
authors.initials: J
authors.lastname: Kim
authors.forename: Dong-Seon
authors.initials: DS
authors.lastname: Lee