title: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.
abstract: Interest in the heteroepitaxy of GaAs on Si has never failed in the last years due to the potential for monolithic integration of GaAs-based devices with Si integrated circuits. But in spite of this effort, devices fabricated from them still use homo-epitaxy only. Here we present an epitaxial technique based on the epitaxial lateral overgrowth of micrometer scale GaAs crystals on a thin SiO2 layer from nanoscale Si seeds. This method permits the integration of high quality and defect-free crystalline GaAs on Si substrate and provides active GaAs/Si heterojunctions with efficient carrier transport through the thin SiO2 layer. The nucleation from small width openings avoids the emission of misfit dislocations and the formation of antiphase domains. With this method, we have experimentally demonstrated for the first time a monolithically integrated GaAs/Si diode with high current densities of 10 kA.cm(-2) for a forward bias of 3.7 V. This epitaxial technique paves the way to hybrid III-V/Si devices that are free from lattice-matching restrictions, and where silicon not only behaves as a substrate but also as an active medium.
authors.affiliation: IEF, CNRS, Univ Paris-Sud, Université Paris-Saclay, Orsay, France.
authors.forename: Charles
authors.initials: C
authors.lastname: Renard
authors.affiliation: IEF, CNRS, Univ Paris-Sud, Université Paris-Saclay, Orsay, France.|GeePs, UMR CNRS 8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités, UPMC Univ Paris 06, Université Paris-Saclay, 11 rue Joliot Curie, Plateau de Moulon, 91192, Gif sur Yvette, France.
authors.forename: Timothée
authors.initials: T
authors.lastname: Molière
authors.affiliation: CEMES-CNRS and Université de Toulouse, 29 rue Jeanne Marvig, 31055 Toulouse, France.
authors.forename: Nikolay
authors.initials: N
authors.lastname: Cherkashin
authors.affiliation: GeePs, UMR CNRS 8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités, UPMC Univ Paris 06, Université Paris-Saclay, 11 rue Joliot Curie, Plateau de Moulon, 91192, Gif sur Yvette, France.
authors.forename: José
authors.initials: J
authors.lastname: Alvarez
authors.affiliation: IEF, CNRS, Univ Paris-Sud, Université Paris-Saclay, Orsay, France.
authors.forename: Laetitia
authors.initials: L
authors.lastname: Vincent
authors.affiliation: GeePs, UMR CNRS 8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités, UPMC Univ Paris 06, Université Paris-Saclay, 11 rue Joliot Curie, Plateau de Moulon, 91192, Gif sur Yvette, France.
authors.forename: Alexandre
authors.initials: A
authors.lastname: Jaffré
authors.affiliation: IEF, CNRS, Univ Paris-Sud, Université Paris-Saclay, Orsay, France.
authors.forename: Géraldine
authors.initials: G
authors.lastname: Hallais
authors.affiliation: Universidad Politécnica de Valencia, NTC, Camino de Vera s/n. 46022, Valencia, Spain.
authors.forename: James Patrick
authors.initials: JP
authors.lastname: Connolly
authors.affiliation: GeePs, UMR CNRS 8507, CentraleSupelec, Univ Paris-Sud, Sorbonne Universités, UPMC Univ Paris 06, Université Paris-Saclay, 11 rue Joliot Curie, Plateau de Moulon, 91192, Gif sur Yvette, France.
authors.forename: Denis
authors.initials: D
authors.lastname: Mencaraglia
authors.affiliation: IEF, CNRS, Univ Paris-Sud, Université Paris-Saclay, Orsay, France.
authors.forename: Daniel
authors.initials: D
authors.lastname: Bouchier