title: Development of broadband X-ray interference lithography large area exposure system.
abstract: The single-exposure patterned area is about several 10(2) × 10(2) μm(2) which is mainly decided by the mask area in multi-beam X-ray interference lithography (XIL). The exposure area is difficult to stitch to a larger one because the patterned area is surrounded by 0th diffraction exposure areas. To block the 0th diffraction beams precisely and effectively, a new large area exposure technology is developed in the Shanghai Synchrotron Radiation Facility by applying an order-sorting aperture with a new in situ monitoring scheme in the XIL system. The patterned area could be stitched readily up to several square centimeters and even bigger by this technology.
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Chaofan
authors.initials: C
authors.lastname: Xue
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Yanqing
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Fangyuan
authors.initials: F
authors.lastname: Zhu
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Shumin
authors.initials: S
authors.lastname: Yang
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Haigang
authors.initials: H
authors.lastname: Liu
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Liansheng
authors.initials: L
authors.lastname: Wang
authors.affiliation: Shanghai Institute of Applied Physics, Shanghai Synchrotron Radiation Facility, Chinese Academy of Sciences, Shanghai 201800, People's Republic of China.
authors.forename: Renzhong
authors.initials: R
authors.lastname: Tai