title: Contacts between Two- and Three-Dimensional Materials: Ohmic, Schottky, and p-n Heterojunctions.
abstract: After a decade of intensive research on two-dimensional (2D) materials inspired by the discovery of graphene, the field of 2D electronics has reached a stage with booming materials and device architectures. However, the efficient integration of 2D functional layers with three-dimensional (3D) systems remains a significant challenge, limiting device performance and circuit design. In this review, we investigate the experimental efforts in interfacing 2D layers with 3D materials and analyze the properties of the heterojunctions formed between them. The contact resistivity of metal on graphene and related 2D materials deserves special attention, while the Schottky junctions formed between metal/2D semiconductor or graphene/3D semiconductor call for careful reconsideration of the physical models describing the junction behavior. The combination of 2D and 3D semiconductors presents a form of p-n junctions that have just marked their debut. For each type of the heterojunctions, the potential applications are reviewed briefly.
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.|Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States.
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Cheng
authors.initials: C
authors.lastname: Cheng
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Sichao
authors.initials: S
authors.lastname: Du
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Jianyi
authors.initials: J
authors.lastname: Yang
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Yu
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Jack
authors.initials: J
authors.lastname: Luo
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Wenyan
authors.initials: W
authors.lastname: Yin
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Erping
authors.initials: E
authors.lastname: Li
authors.affiliation: College of Information Science and Electronic Engineering, Zhejiang University , Hangzhou, Zhejiang 310027, China.
authors.forename: Shurong
authors.initials: S
authors.lastname: Dong
authors.affiliation: School of Electrical and Computer Engineering, Purdue University , West Lafayette, Indiana 47906, United States.
authors.forename: Peide
authors.initials: P
authors.lastname: Ye
authors.affiliation: Department of Chemistry and Biochemistry, University of California , Los Angeles, California 90095, United States.
authors.forename: Xiangfeng
authors.initials: X
authors.lastname: Duan
keywords: 2D materials; 3D materials; Ohmic contact; Schottky; detectors; graphene; heterojunctions; metals; sensors; transfer length method; transition metal dichalcogenides