title: III-V-on-silicon 2-µm-wavelength-range wavelength demultiplexers with heterogeneously integrated InP-based type-II photodetectors.
abstract: 2-µm-wavelength-range silicon-on-insulator (SOI) arrayed waveguide gratings (AWGs) with heterogeneously integrated InP-based type-II quantum well photodetectors are presented. Low insertion loss (2.5-3 dB) and low crosstalk (-30 to -25 dB) AWGs are realized. The InP-based type-II photodetectors are integrated with the AWGs using two different coupling approaches. Adiabatic-taper-based photodetectors show a responsivity of 1.6 A/W at 2.35 µm wavelength and dark current of 10 nA at -0.5 V, while photodetectors using grating-assisted coupling have a responsivity of 0.1 A/W and dark current of 5 nA at -0.5 V. The integration of the photodetector array does not degrade the insertion loss and crosstalk of the device. The photodetector epitaxial stack can also be used to realize the integration of a broadband light source, thereby enabling fully integrated spectroscopic systems.
authors.forename: Ruijun
authors.initials: R
authors.lastname: Wang
authors.forename: Muhammad
authors.initials: M
authors.lastname: Muneeb
authors.forename: Stephan
authors.initials: S
authors.lastname: Sprengel
authors.forename: Gerhard
authors.initials: G
authors.lastname: Boehm
authors.forename: Aditya
authors.initials: A
authors.lastname: Malik
authors.forename: Roel
authors.initials: R
authors.lastname: Baets
authors.forename: Markus-Christian
authors.initials: MC
authors.lastname: Amann
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens