title: Harnessing Topological Band Effects in Bismuth Telluride Selenide for Large Enhancements in Thermoelectric Properties through Isovalent Doping.
abstract: Dilute isovalent sulfur doping simultaneously increases electrical conductivity and Seebeck coefficient in Bi2 Te2 Se nanoplates, and bulk pellets made from them. This unusual trend at high electron concentrations is underpinned by multifold increases in electron effective mass attributable to sulfur-induced band topology effects, providing a new way for accessing a high thermoelectric figure-of-merit in topological-insulator-based nanomaterials through doping.
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
authors.lastname: Devender
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.
authors.forename: Pascal
authors.initials: P
authors.lastname: Gehring
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
authors.forename: Andrew
authors.initials: A
authors.lastname: Gaul
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.
authors.forename: Alexander
authors.initials: A
authors.lastname: Hoyer
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.
authors.forename: Kristina
authors.initials: K
authors.lastname: Vaklinova
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
authors.forename: Rutvik J
authors.initials: RJ
authors.lastname: Mehta
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.
authors.forename: Marko
authors.initials: M
authors.lastname: Burghard
authors.affiliation: Department of Mechanical Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
authors.forename: Theodorian
authors.initials: T
authors.lastname: Borca-Tasciuc
authors.affiliation: Department of Physics and Astronomy, University of Missouri, Columbia, MO, 65211-7010, USA.
authors.forename: David J
authors.initials: DJ
authors.lastname: Singh
authors.affiliation: Max Planck Institute for Solid State Research, Heisenbergstrasse 1, D-70569, Stuttgart, Germany.|Institut de Physique de la Matière Condensée, Ecole Polytechnique Fédérale de Lausanne, 1015, Lausanne, Switzerland.
authors.forename: Klaus
authors.initials: K
authors.lastname: Kern
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, Troy, NY, 12180, USA.
authors.forename: Ganpati
authors.initials: G
authors.lastname: Ramanath
keywords: doping; high figure-of-merit; thermoelectric nanomaterials; topological insulators