title: Epitaxial Growth of an Organic p-n Heterojunction: C60 on Single-Crystal Pentacene.
abstract: Designing molecular p-n heterojunction structures, i.e., electron donor-acceptor contacts, is one of the central challenges for further development of organic electronic devices. In the present study, a well-defined p-n heterojunction of two representative molecular semiconductors, pentacene and C60, formed on the single-crystal surface of pentacene is precisely investigated in terms of its growth behavior and crystallographic structure. C60 assembles into a (111)-oriented face-centered-cubic crystal structure with a specific epitaxial orientation on the (001) surface of the pentacene single crystal. The present experimental findings provide molecular scale insights into the formation mechanisms of the organic p-n heterojunction through an accurate structural analysis of the single-crystalline molecular contact.
authors.affiliation: Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science , 2641 Yamazaki, Noda, Chiba 278-8510, Japan.
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Nakayama
authors.affiliation: Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: Yuta
authors.initials: Y
authors.lastname: Mizuno
authors.affiliation: National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology , Tsukuba Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Takuya
authors.initials: T
authors.lastname: Hosokai
authors.affiliation: Industrial Application Division, Japan Synchrotron Radiation Research Institute (JASRI) , 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan.
authors.forename: Tomoyuki
authors.initials: T
authors.lastname: Koganezawa
authors.affiliation: Department of Pure and Applied Chemistry, Faculty of Science and Technology, Tokyo University of Science , 2641 Yamazaki, Noda, Chiba 278-8510, Japan.
authors.forename: Ryohei
authors.initials: R
authors.lastname: Tsuruta
authors.affiliation: Institut für Angewandte Physik, Eberhard Karls Universität Tübingen , Auf der Morgenstelle 10, 72076 Tübingen, Germany.
authors.forename: Alexander
authors.initials: A
authors.lastname: Hinderhofer
authors.affiliation: Institut für Angewandte Physik, Eberhard Karls Universität Tübingen , Auf der Morgenstelle 10, 72076 Tübingen, Germany.
authors.forename: Alexander
authors.initials: A
authors.lastname: Gerlach
authors.affiliation: Cavendish Laboratory, University of Cambridge , Cambridge CB3 0HE, U.K.
authors.forename: Katharina
authors.initials: K
authors.lastname: Broch
authors.affiliation: Institut für Angewandte Physik, Eberhard Karls Universität Tübingen , Auf der Morgenstelle 10, 72076 Tübingen, Germany.
authors.forename: Valentina
authors.initials: V
authors.lastname: Belova
authors.affiliation: Institut für Angewandte Physik, Eberhard Karls Universität Tübingen , Auf der Morgenstelle 10, 72076 Tübingen, Germany.
authors.forename: Heiko
authors.initials: H
authors.lastname: Frank
authors.affiliation: Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: Masayuki
authors.initials: M
authors.lastname: Yamamoto
authors.affiliation: Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin , Newtonstr. 15, DE-12489 Berlin, Germany.|Helmholtz Zentrum Berlin für Materialien und Energie GmbH , Albert-Einstein-Strasse 15, DE-12489 Berlin, Germany.
authors.forename: Jens
authors.initials: J
authors.lastname: Niederhausen
authors.affiliation: Helmholtz Zentrum Berlin für Materialien und Energie GmbH , Albert-Einstein-Strasse 15, DE-12489 Berlin, Germany.
authors.forename: Hendrik
authors.initials: H
authors.lastname: Glowatzki
authors.affiliation: Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin , Newtonstr. 15, DE-12489 Berlin, Germany.
authors.forename: Jürgen P
authors.initials: JP
authors.lastname: Rabe
authors.affiliation: Institut für Physik & IRIS Adlershof, Humboldt-Universität zu Berlin , Newtonstr. 15, DE-12489 Berlin, Germany.|Helmholtz Zentrum Berlin für Materialien und Energie GmbH , Albert-Einstein-Strasse 15, DE-12489 Berlin, Germany.
authors.forename: Norbert
authors.initials: N
authors.lastname: Koch
authors.affiliation: Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.|Center for Frontier Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: Hisao
authors.initials: H
authors.lastname: Ishii
authors.affiliation: Institut für Angewandte Physik, Eberhard Karls Universität Tübingen , Auf der Morgenstelle 10, 72076 Tübingen, Germany.
authors.forename: Frank
authors.initials: F
authors.lastname: Schreiber
authors.affiliation: Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
authors.forename: Nobuo
authors.initials: N
authors.lastname: Ueno
keywords: X-ray reflectivity; fullerene; grazing-incidence X-ray diffraction; organic electronics; organic semiconductor; solar cell; synchrotron radiation; van der Waals epitaxy