title: Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.
abstract: Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Junfeng
authors.initials: J
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Zengliang
authors.initials: Z
authors.lastname: Shi
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Yueyue
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Lin
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Qiuxiang
authors.initials: Q
authors.lastname: Zhu
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Zhengshan
authors.initials: Z
authors.lastname: Tian
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Dai
authors.affiliation: Institute of Modern Optics &State Key Laboratory for Mesoscopic Physics, School of Physics,Peking University, Beijing 100871, China.
authors.forename: Shufeng
authors.initials: S
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Bioelectronics, School of Biological Science &Medical Engineering, Southeast University, Nanjing 210096, China.
authors.forename: Chunxiang
authors.initials: C
authors.lastname: Xu