title: Doped Semiconductor-Nanocrystal Emitters with Optimal Photoluminescence Decay Dynamics in Microsecond to Millisecond Range: Synthesis and Applications.
abstract: Transition metal doped semiconductor nanocrystals (d-dots) possess fundamentally different emission properties upon photo- or electroexcitation, which render them as unique emitters for special applications. However, in comparison with intrinsic semiconductor nanocrystals, the potential of d-dots has been barely realized, because many of their unique emission properties mostly rely on precise control of their photoluminescence (PL) decay dynamics. Results in this work revealed that it would be possible to obtain bright d-dots with nearly single-exponential PL decay dynamics. By tuning the number of Mn(2+) ions per dot from ∼500 to 20 in Mn(2+) doped ZnSe nanocrystals (Mn:ZnSe d-dots), the single-exponential PL decay lifetime was continuously tuned from ∼50 to 1000 μs. A synthetic scheme was further developed for uniform and epitaxial growth of thick ZnS shell, ∼7 monolayers. The resulting Mn:ZnSe/ZnS core/shell d-dots were found to be essential for necessary environmental durability of the PL properties, both steady-state and transient ones, for the d-dot emitters. These characteristics combined with intense absorption and high PL quantum yields (70 ± 5%) enabled greatly simplified schemes for various applications of PL lifetime multiplexing using Mn:ZnSe/ZnS core/shell d-dots.
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Chaodan
authors.initials: C
authors.lastname: Pu
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Junliang
authors.initials: J
authors.lastname: Ma
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Haiyan
authors.initials: H
authors.lastname: Qin
authors.affiliation: College of Life Information Science and Instrument Engineering, Hangzhou Dianzi University , Hangzhou 310018, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Yan
authors.affiliation: Najing Technology Corporation , 500 Qiuyi Road, Hangzhou 310052, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Fu
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Niu
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Yang
authors.affiliation: Department of Chemical and Biological Engineering, Zhejiang University , Hangzhou 310007, China.
authors.forename: Yifan
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Najing Technology Corporation , 500 Qiuyi Road, Hangzhou 310052, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Zhao
authors.affiliation: Center for Chemistry of Novel & High-Performance Materials, and Department of Chemistry, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Xiaogang
authors.initials: X
authors.lastname: Peng