title: A three-terminal ultraviolet photodetector constructed on a barrier-modulated triple-layer architecture.
abstract: We report a novel three-terminal device fabricated on MgZnO/ZnO/MgZnO triple-layer architecture. Because of the combined barrier modulation effect by both gate and drain biases, the device shows an unconventional I-V characteristics compared to a common field effect transistor. The photoresponse behavior of this unique device was also investigated and applied in constructing a new type ultraviolet (UV) photodetector, which may be potentially used as an active element in a UV imaging array. More significantly, the proper gate bias-control offers a new pathway to overcome the common persistent photoconductivity (PPC) effect problem. Additionally, the MgZnO:F as a channel layer was chosen to optimize the photoresponse properties, and the spectrum indicated a gate bias-dependent wavelength-selectable feature for different response peaks, which suggests the possibility to build a unique dual-band UV photodetector with this new architecture.
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Daqian
authors.initials: D
authors.lastname: Ye
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Zengxia
authors.initials: Z
authors.lastname: Mei
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Huili
authors.initials: H
authors.lastname: Liang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Lishu
authors.initials: L
authors.lastname: Liu
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Yonghui
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Junqiang
authors.initials: J
authors.lastname: Li
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Yaoping
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Changzhi
authors.initials: C
authors.lastname: Gu
authors.affiliation: Key Laboratory for Renewable Energy, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, People's Republic of China.
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Du