title: Facet-Independent Electric-Field-Induced Volume Metallization of Tungsten Trioxide Films.
abstract: Reversible metallization of band and Mott insulators by ionic-liquid gating is accompanied by significant structural changes. A change in conductivity of seven orders of magnitude at room temperature is found in epitaxial films of WO3 with an associated monoclinic-to-cubic structural reorganization. The migration of oxygen ions along open volume channels is the underlying mechanism.
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.|Max Planck Institute for Microstructure Physics, 06120, Halle, Germany.
authors.forename: Simone G
authors.initials: SG
authors.lastname: Altendorf
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.
authors.forename: Jaewoo
authors.initials: J
authors.lastname: Jeong
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.|Graduate School of Excellence Materials Science in Mainz, Johannes Gutenberg University, Staudingerweg 9, 55128, Mainz, Germany.|Fachbereich Physik, University of Kaiserslautern, Erwin-Schrödinger-Strasse 56, 67663, Kaiserslautern, Germany.
authors.forename: Donata
authors.initials: D
authors.lastname: Passarello
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.
authors.forename: Nagaphani B
authors.initials: NB
authors.lastname: Aetukuri
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.
authors.forename: Mahesh G
authors.initials: MG
authors.lastname: Samant
authors.affiliation: IBM Almaden Research Center, San Jose, CA, 95120, USA.|Max Planck Institute for Microstructure Physics, 06120, Halle, Germany.
authors.forename: Stuart S P
authors.initials: SS
authors.lastname: Parkin
keywords: insulator-to-metal transition; ionic-liquid gating; oxygen vacancies; tungsten trioxide