title: Engineering Bandgaps of Monolayer MoS2 and WS2 on Fluoropolymer Substrates by Electrostatically Tuned Many-Body Effects.
abstract: Intrinsic electrical and excitonic properties of monolayer transition-metal dichalcogenides can be revealed on CYTOP fluoropolymer substrates with greatly suppressed unintentional doping and dielectric screening. Ambipolar transport behavior is observed in monolayer WS2 by applying solid-state back gates. The excitonic properties of monolayer MoS2 and WS2 are determined by intricate interplays between the bandgap renormalization, Pauli blocking, and carrier screening against carrier doping.
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.
authors.forename: Bo
authors.initials: B
authors.lastname: Liu
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.|Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.
authors.forename: Weijie
authors.initials: W
authors.lastname: Zhao
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.|SZU-NUS Collaborative Innovation Center for Optoelectronic Science and Technology, Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
authors.forename: Zijing
authors.initials: Z
authors.lastname: Ding
authors.affiliation: Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.
authors.forename: Ivan
authors.initials: I
authors.lastname: Verzhbitskiy
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.
authors.forename: Linjun
authors.initials: L
authors.lastname: Li
authors.affiliation: Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.
authors.forename: Junpeng
authors.initials: J
authors.lastname: Lu
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.
authors.forename: Jianyi
authors.initials: J
authors.lastname: Chen
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.|Department of Physics, National University of Singapore, 2 Science Drive 3, 117542, Singapore.
authors.forename: Goki
authors.initials: G
authors.lastname: Eda
authors.affiliation: Department of Chemistry, National University of Singapore, 3 Science Drive 3, 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, 6 Science Drive 2, 117546, Singapore.
authors.forename: Kian Ping
authors.initials: KP
authors.lastname: Loh
keywords: CYTOP substrate; bandgap renormalization; excitons; monolayer transition-metal dichalcogenides; phase-space filling effect