title: Microwave-Induced Resistance Oscillations as a Classical Memory Effect.
abstract: By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by recollisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magnetotransport in the presence of a microwave field, taking into account memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.
authors.affiliation: Ioffe Institute, 194021 St. Petersburg, Russia.|Laboratoire Charles Coulomb, Université Montpellier, CNRS, 34095 Montpellier, France.
authors.forename: Y M
authors.initials: YM
authors.lastname: Beltukov
authors.affiliation: Laboratoire Charles Coulomb, Université Montpellier, CNRS, 34095 Montpellier, France.
authors.forename: M I
authors.initials: MI
authors.lastname: Dyakonov