title: Non-volatile transistor memory devices using charge storage cross-linked core-shell nanoparticles.
abstract: Solution processable cross-linked core-shell poly[poly(ethylene glycol)methylether methacrylate]-block-poly(2,5-dibromo-3-vinylthiophene) (poly(PEGMA)m-b-poly(DB3VT)n) nanoparticles are firstly explored as charge storage materials for transistor-type memory devices owing to their efficient and controllable ability in electric charge transfer and trapping.
authors.affiliation: Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan. chenwc@ntu.edu.tw.
authors.forename: Chen-Tsyr
authors.initials: CT
authors.lastname: Lo
authors.forename: Yu
authors.initials: Y
authors.lastname: Watanabe
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Oya
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Nakabayashi
authors.forename: Hideharu
authors.initials: H
authors.lastname: Mori
authors.forename: Wen-Chang
authors.initials: WC
authors.lastname: Chen