title: Passive Q-switching of a Tm,Ho:KLu(WO4)2microchip laser by a Cr:ZnS saturable absorber.
abstract: A diode-pumped Tm,Ho:KLu(WO4)2microchip laser passively Q-switched with a Cr:ZnS saturable absorber generated an average output power of 131 mW at 2063.6 nm with a slope efficiency of 11% and a Q-switching conversion efficiency of 58%. The pulse characteristics were 14  ns/9  μJ at a pulse repetition frequency of 14.5 kHz. With higher modulation depth of the saturable absorber, 9  ns/10.4  μJ/8.2  kHz pulses were generated at 2061.1 nm, corresponding to a record peak power extracted from a passively Q-switched Tm,Ho laser of 1.15 kW. A theoretical model is presented, predicting the pulse energy and duration. The simulations are in good agreement with the experimental results.
authors.forename: J M
authors.initials: JM
authors.lastname: Serres
authors.forename: P
authors.initials: P
authors.lastname: Loiko
authors.forename: X
authors.initials: X
authors.lastname: Mateos
authors.forename: V
authors.initials: V
authors.lastname: Jambunathan
authors.forename: A S
authors.initials: AS
authors.lastname: Yasukevich
authors.forename: K V
authors.initials: KV
authors.lastname: Yumashev
authors.forename: V
authors.initials: V
authors.lastname: Petrov
authors.forename: U
authors.initials: U
authors.lastname: Griebner
authors.forename: M
authors.initials: M
authors.lastname: Aguiló
authors.forename: F
authors.initials: F
authors.lastname: Díaz