title: Extremely Large Gate Modulation in Vertical Graphene/WSe2 Heterojunction Barristor Based on a Novel Transport Mechanism.
abstract: A WSe2 -based vertical graphene-transition metal dichalcogenide heterojunction barristor shows an unprecedented on-current increase with decreasing temperature and an extremely high on/off-current ratio of 5 × 10(7) at 180 K (3 × 10(4) at room temperature). These features originate from a trap-assisted tunneling process involving WSe2 defect states aligned near the graphene Dirac point.
authors.affiliation: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jaewoo
authors.initials: J
authors.lastname: Shim
authors.affiliation: Graduate School of Energy Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, South Korea.
authors.forename: Hyo Seok
authors.initials: HS
authors.lastname: Kim
authors.affiliation: Graduate School of Energy Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, South Korea.
authors.forename: Yoon Su
authors.initials: YS
authors.lastname: Shim
authors.affiliation: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kang
authors.affiliation: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Hyung-Youl
authors.initials: HY
authors.lastname: Park
authors.affiliation: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jaehyeong
authors.initials: J
authors.lastname: Lee
authors.affiliation: SKKU Advanced Institute of nanotechnology, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Jeon
authors.affiliation: SKKU Advanced Institute of nanotechnology, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Seong Jun
authors.initials: SJ
authors.lastname: Jung
authors.affiliation: SKKU Advanced Institute of nanotechnology, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Young Jae
authors.initials: YJ
authors.lastname: Song
authors.affiliation: Department of Electrical Engineering, Stanford University, California, CA, 94305, USA.
authors.forename: Woo-Shik
authors.initials: WS
authors.lastname: Jung
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 443-803, South Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon, 443-803, South Korea.
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
authors.affiliation: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Jeehwan
authors.initials: J
authors.lastname: Kim
authors.affiliation: SKKU Advanced Institute of nanotechnology, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: Graduate School of Energy Environment, Water, and Sustainability, Korea Advanced Institute of Science and Technology, Daejeon, 305-701, South Korea.
authors.forename: Yong-Hoon
authors.initials: YH
authors.lastname: Kim
authors.affiliation: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon, 440-746, South Korea.
authors.forename: Jin-Hong
authors.initials: JH
authors.lastname: Park
keywords: WSe2; barristors; graphene; heterojunctions; trap-assisted tunneling