title: A Phosphole Oxide-Containing Organogold(III) Complex for Solution-Processable Resistive Memory Devices with Ternary Memory Performances.
abstract: A novel class of luminescent phosphole oxide-containing alkynylgold(III) complex has been synthesized, characterized, and applied as active material in the fabrication of solution-processable resistive memory devices. Incorporation of the phosphole oxide moiety in gold(III) system has been demonstrated to provide an extra charge-trapping site, giving rise to intriguing ternary memory performances with distinct and low switching threshold voltages, high OFF/ON1/ON2 current ratio of 1/10(3)/10(7), and long retention time for the three states. The present study offers vital insights for the future development of multilevel memory devices using small-molecule organometallic compounds.
authors.affiliation: Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong , Pokfulam Road, Hong Kong, P. R. China.
authors.forename: Eugene Yau-Hin
authors.initials: EY
authors.lastname: Hong
authors.affiliation: Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong , Pokfulam Road, Hong Kong, P. R. China.
authors.forename: Chun-Ting
authors.initials: CT
authors.lastname: Poon
authors.affiliation: Institute of Molecular Functional Materials [Areas of Excellence Scheme, University Grant Committee (Hong Kong)] and Department of Chemistry, The University of Hong Kong , Pokfulam Road, Hong Kong, P. R. China.
authors.forename: Vivian Wing-Wah
authors.initials: VW
authors.lastname: Yam