title: Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air.
abstract: A giant bandgap reduction in layered GaTe is demonstrated. Chemisorption of oxygen to the Te-terminated surfaces produces significant restructuring of the conduction band resulting in a bandgap below 0.8 eV, compared to 1.65 eV for pristine GaTe. Localized partial recovery of the pristine gap is achieved by thermal annealing, demonstrating that reversible band engineering in layered semiconductors is accessible through their surfaces.
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Jose J
authors.initials: JJ
authors.lastname: Fonseca
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.affiliation: Department of Chemical Engineering and Materials Science, University of Minnesota, MN, 55455, USA.
authors.forename: Mehmet
authors.initials: M
authors.lastname: Topsakal
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Palo Alto, CA, 94305, USA.
authors.forename: Annabel R
authors.initials: AR
authors.lastname: Chew
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Alan J
authors.initials: AJ
authors.lastname: Lin
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.
authors.forename: Changhyun
authors.initials: C
authors.lastname: Ko
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Luce
authors.affiliation: Department of Materials Science and Engineering, Stanford University, Palo Alto, CA, 94305, USA.
authors.forename: Alberto
authors.initials: A
authors.lastname: Salleo
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Junqiao
authors.initials: J
authors.lastname: Wu
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley, CA, 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA.
authors.forename: Oscar D
authors.initials: OD
authors.lastname: Dubon
keywords: band structure modification; gallium telluride; layered semiconductors; oxygen chemisorption