title: Structure and Ferroelectric Properties of High TcBiScO3-PbTiO3Epitaxial Thin Films.
abstract: Piezoelectric ceramics of new composition with higher Curie temperature Tcare extensively studied for better piezoelectric microelectromechanical systems (MEMS). Apart from the compositional research, enhanced Tccould be achieved in a modified structure. We have considered that a designed laminated structure of Pb(Zr, Ti)O3(PZT)-based thin film, i.e., relaxed heteroepitaxial epitaxial thin film, is one of the promising modified structures to enhance Tc. This structure exhibits an extraordinarily high Tc, i.e., [Formula: see text] (bulk [Formula: see text]). In this paper, we have fabricated the designed laminated structure of high Tc(1-x)BiScO3-xPbTiO3. Tcof BS-0.8PT thin films was found to be extraordinarily high, i.e., [Formula: see text] (bulk Tc, [Formula: see text]). Their ferroelectric performances were comparable to those of PZT-based thin films. The present BS-xPT thin films have a high potential for fabrication of high-temperature-stable piezoelectric MEMS. The mechanism of the enhanced Tcis probably the presence of the mechanically stable interface to temperature in the laminated structure. We believe this designed laminated structure can extract fruitful properties of bulk ferroelectric ceramics.
authors.forename: Kiyotaka
authors.initials: K
authors.lastname: Wasa
authors.forename: Shinya
authors.initials: S
authors.lastname: Yoshida
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Hanzawa
authors.forename: Hideaki
authors.initials: H
authors.lastname: Adachi
authors.forename: Toshiyuki
authors.initials: T
authors.lastname: Matsunaga
authors.forename: Shuji
authors.initials: S
authors.lastname: Tanaka