title: Ultrafast Response p-Si/n-ZnO Heterojunction Ultraviolet Detector Based on Pyro-Phototronic Effect.
abstract: A light-self-induced pyro-phototronic effect in wurtzite ZnO nanowires is proposed as an effective approach to achieve ultrafast response ultraviolet sensing in p-Si/n-ZnO heterostructures. The relatively long response/recovery time of zinc-oxide-based ultraviolet sensors in air/vacuum has long been an obstacle to developing such detectors for practical applications. The response/recovery time and photoresponsivity are greatly improved by the pyro-phototronic effect.
authors.affiliation: Department of Physics, Applied Optics Beijing Area Major Laboratory, Beijing Normal University, Beijing, 100875, China.
authors.forename: Zhaona
authors.initials: Z
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
authors.forename: Ruomeng
authors.initials: R
authors.lastname: Yu
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
authors.forename: Xingfu
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
authors.forename: Wenzhuo
authors.initials: W
authors.lastname: Wu
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: UV photodetectors; ZnO nanowires; heterostructures; pyro-phototronic effect