title: The surface electronic structure of silicon terminated (100) diamond.
abstract: A combination of synchrotron-based x-ray spectroscopy and contact potential difference measurements have been used to examine the electronic structure of the (3 × 1) silicon terminated (100) diamond surface under ultra high vacuum conditions. An occupied surface state which sits 1.75 eV below the valence band maximum has been identified, and indications of mid-gap unoccupied surface states have been found. Additionally, the pristine silicon terminated surface is shown to possess a negative electron affinity of -0.86 ± 0.1 eV.
authors.affiliation: Department of Chemistry and Physics, La Trobe Institute for Molecular Sciences, La Trobe University, Victoria 3086, Australia.
authors.forename: A K
authors.initials: AK
authors.lastname: Schenk
authors.forename: A
authors.initials: A
authors.lastname: Tadich
authors.forename: M J
authors.initials: MJ
authors.lastname: Sear
authors.forename: D
authors.initials: D
authors.lastname: Qi
authors.forename: A T S
authors.initials: AT
authors.lastname: Wee
authors.forename: A
authors.initials: A
authors.lastname: Stacey
authors.forename: C I
authors.initials: CI
authors.lastname: Pakes