title: Infrared dielectric properties of low-stress silicon oxide.
abstract: Silicon oxide thin films play an important role in the realization of optical coatings and high-performance electrical circuits. Estimates of the dielectric function in the far- and mid-infrared regime are derived from the observed transmittance spectrum for a commonly employed low-stress silicon oxide formulation. The experimental, modeling, and numerical methods used to extract the dielectric function are presented.
authors.forename: Giuseppe
authors.initials: G
authors.lastname: Cataldo
authors.forename: Edward J
authors.initials: EJ
authors.lastname: Wollack
authors.forename: Ari D
authors.initials: AD
authors.lastname: Brown
authors.forename: Kevin H
authors.initials: KH
authors.lastname: Miller