title: Evolution of electronic states in n-type copper oxide superconductor via electric double layer gating.
abstract: The occurrence of electrons and holes in n-type copper oxides has been achieved by chemical doping, pressure, and/or deoxygenation. However, the observed electronic properties are blurred by the concomitant effects such as change of lattice structure, disorder, etc. Here, we report on successful tuning the electronic band structure of n-type Pr2-xCexCuO4 (x = 0.15) ultrathin films, via the electric double layer transistor technique. Abnormal transport properties, such as multiple sign reversals of Hall resistivity in normal and mixed states, have been revealed within an electrostatic field in range of -2 V to + 2 V, as well as varying the temperature and magnetic field. In the mixed state, the intrinsic anomalous Hall conductivity invokes the contribution of both electron and hole-bands as well as the energy dependent density of states near the Fermi level. The two-band model can also describe the normal state transport properties well, whereas the carrier concentrations of electrons and holes are always enhanced or depressed simultaneously in electric fields. This is in contrast to the scenario of Fermi surface reconstruction by antiferromagnetism, where an anti-correlation is commonly expected.
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.|Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742, USA.
authors.forename: Kui
authors.initials: K
authors.lastname: Jin
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Hu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Beiyi
authors.initials: B
authors.lastname: Zhu
authors.affiliation: Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742, USA.|Department of Material Science and Engineering, Yonsei University, Seoul 120-749, Republic of Korea.
authors.forename: Dohun
authors.initials: D
authors.lastname: Kim
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Yuan
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yujie
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Xiang
authors.affiliation: Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742, USA.|School of Physics, Monash University, Melbourne, Victoria 3800, Australia.
authors.forename: Michael S
authors.initials: MS
authors.lastname: Fuhrer
authors.affiliation: Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742, USA.
authors.forename: Ichiro
authors.initials: I
authors.lastname: Takeuchi
authors.affiliation: Center for Nanophysics and Advanced Materials and Department of Physics, University of Maryland, College Park, Maryland 20742, USA.
authors.forename: Richard L
authors.initials: RL
authors.lastname: Greene