title: Formation of Magnetic Anisotropy by Lithography.
abstract: Artificial interface anisotropy is demonstrated in alternating Co/Pt and Co/Pd stripe patterns, providing a means of forming magnetic anisotropy using lithography. In-plane hysteresis loops measured along two principal directions are explained in depth by two competing shape and interface anisotropies, thus confirming the formation of interface anisotropy at the Co/Pt and Co/Pd interfaces of the stripe patterns. The measured interface anisotropy energies, which are in the range of 0.2-0.3 erg/cm(2) for both stripes, are smaller than those observed in conventional multilayers, indicating a decrease in smoothness of the interfaces when formed by lithography. The demonstration of interface anisotropy in the Co/Pt and Co/Pd stripe patterns is of significant practical importance, because this setup makes it possible to form anisotropy using lithography and to modulate its strength by controlling the pattern width. Furthermore, this makes it possible to form more complex interface anisotropy by fabricating two-dimensional patterns. These artificial anisotropies are expected to open up new device applications such as multilevel bits using in-plane magnetoresistive thin-film structures.
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
authors.forename: Si Nyeon
authors.initials: SN
authors.lastname: Kim
authors.affiliation: Research and Development Division, SK Hynix Semiconductor Inc., Icheon 17336, Korea.
authors.forename: Yoon Jae
authors.initials: YJ
authors.lastname: Nam
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
authors.forename: Yang Doo
authors.initials: YD
authors.lastname: Kim
authors.affiliation: Center for Spintronics Research, Korea Institute of Science and Technology, Seoul 02792, Korea.
authors.forename: Jun Woo
authors.initials: JW
authors.lastname: Choi
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
authors.forename: Heon
authors.initials: H
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul 02841, Korea.
authors.forename: Sang Ho
authors.initials: SH
authors.lastname: Lim