title: Polarized emission from CsPbX3 perovskite quantum dots.
abstract: Compared to organic/inorganic hybrid perovskites, full inorganic perovskite quantum dots (QDs) exhibit higher stability. In this study, full inorganic CsPbX3 (X = Br, I and mixed halide systems Br/I) perovskite QDs have been synthesized and interestingly, these QDs showed highly polarized photoluminescence which is systematically studied for the first time. Furthermore, the polarization of CsPbI3 was as high as 0.36 in hexane and 0.40 as a film. The CsPbX3 perovskite QDs with high polarization properties indicate that they possess great potential for application in new generation displays with wide colour gamut and low power consumption.
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Dan
authors.initials: D
authors.lastname: Wang
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Dan
authors.initials: D
authors.lastname: Wu
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Di
authors.initials: D
authors.lastname: Dong
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Junjie
authors.initials: J
authors.lastname: Hao
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Jing
authors.initials: J
authors.lastname: Qin
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn.
authors.forename: Bing
authors.initials: B
authors.lastname: Xu
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn and Shenzhen Key Laborary of 3rd Generation Semiconductor Devices (SUSTech), Shenzhen, 518055, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Wang
authors.affiliation: Department of Electrical and Electronic Engineering, College of Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, 518055, China. wangk@sustc.edu.cn and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Sun