title: Enhancing the field emission properties of Se-doped GaN nanowires.
abstract: Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of 20-120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on field (2.9 V μm(-1)) compared with the pure GaN NWs (7.0 V μm(-1)). In addition, density functional theory calculations indicate that the donor states near the Fermi level are mainly formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower than those of pure GaN NWs.
authors.affiliation: School of Science, Xi'an University of Technology, Xi'an, 710048, People's Republic of China. Institute for Superconducting and Electronic Materials (ISEM), Wollongong, New South Wales 2522, Australia.
authors.forename: Enling
authors.initials: E
authors.lastname: Li
authors.forename: Guishuang
authors.initials: G
authors.lastname: Wu
authors.forename: Zhen
authors.initials: Z
authors.lastname: Cui
authors.forename: Deming
authors.initials: D
authors.lastname: Ma
authors.forename: Wei
authors.initials: W
authors.lastname: Shi
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Wang