title: Effects of backscattering in high-Q, large-area silicon-on-insulator ring resonators.
abstract: We demonstrate large-area silicon-on-insulator ring resonators with Q values of about 2×106at critical coupling and 3.6×106for heavily undercoupled conditions. A model has been developed to understand the impact of waveguide backscattering and subcomponent imperfections on the spectral response of our devices. The model predicts the appearance of signals at ports that would not have them under backscattering-free, ideal-power-splitting conditions. The predictions of our model are shown to match the phenomena observed in our measurements.
authors.forename: Miguel Á
authors.initials: MÁ
authors.lastname: Guillén-Torres
authors.forename: Kyle
authors.initials: K
authors.lastname: Murray
authors.forename: Han
authors.initials: H
authors.lastname: Yun
authors.forename: Michael
authors.initials: M
authors.lastname: Caverley
authors.forename: Edmond
authors.initials: E
authors.lastname: Cretu
authors.forename: Lukas
authors.initials: L
authors.lastname: Chrostowski
authors.forename: Nicolas A F
authors.initials: NA
authors.lastname: Jaeger