title: Effect of Oxidation Condition on Growth of N: ZnO Prepared by Oxidizing Sputtering Zn-N Film.
abstract: Nitrogen-doped zinc oxide (N: ZnO) films have been prepared by oxidizing reactive RF magnetron-sputtering zinc nitride (Zn-N) films. The effect of oxidation temperature and oxidation time on the growth, transmittance, and electrical properties of the film has been explored. The results show that both long oxidation time and high oxidation temperature can obtain the film with a good transmittance (over 80 % for visible and infrared light) and a high carrier concentration. The N: ZnO film exhibits a special growth model with the oxidation time and is first to form a N: ZnO particle on the surface, then to become a N: ZnO layer, and followed by the inside Zn-N segregating to the surface to oxidize N: ZnO. The surface particle oxidized more adequately than the inside. However, the X-ray photoemission spectroscopy results show that the lower N concentration results in the lower N substitution in the O lattice (No). This leads to the formation of n-type N: ZnO and the decrease of carrier concentration. Thus, this method can be used to tune the microstructure, optical transmittance, and electrical properties of the N: ZnO film.
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
authors.forename: Xuesi
authors.initials: X
authors.lastname: Qin
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China. gjli@epm.neu.edu.cn.
authors.forename: Guojian
authors.initials: G
authors.lastname: Li
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Xiao
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
authors.forename: Guozhen
authors.initials: G
authors.lastname: Chen
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Wang
authors.affiliation: Key Laboratory of Electromagnetic Processing of Materials (Ministry of Education), Northeastern University, Shenyang, 110819, China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Wang
keywords: Film; Growth; N-doped ZnO; Oxidation