title: Ultralow power complementary inverter circuits using axially doped p- and n-channel Si nanowire field effect transistors.
abstract: We have successfully synthesized axially doped p- and n-type regions on a single Si nanowire (NW). Diodes and complementary metal-oxide-semiconductor (CMOS) inverter devices using single axial p- and n-channel Si NW field-effect transistors (FETs) were fabricated. We show that the threshold voltages of both p- and n-channel Si NW FETs can be lowered to nearly zero by effectively controlling the doping concentration. Because of the high performance of the p- and n-type Si NW channel FETs, especially with regard to the low threshold voltage, the fabricated NW CMOS inverters have a low operating voltage (<3 V) while maintaining a high voltage gain (∼6) and ultralow static power dissipation (≤0.3 pW) at an input voltage of ±3 V. This result offers a viable way for the fabrication of a high-performance high-density logic circuit using a low-temperature fabrication process, which makes it suitable for flexible electronics.
authors.affiliation: Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea. djkang@skku.edu.
authors.forename: Ngoc Huynh
authors.initials: NH
authors.lastname: Van
authors.affiliation: School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea.
authors.forename: Jae-Hyun
authors.initials: JH
authors.lastname: Lee
authors.affiliation: School of Advanced Materials Science and Engineering, SKKU Advanced Institute of Nanotechnology, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea.
authors.forename: Dongmok
authors.initials: D
authors.lastname: Whang
authors.affiliation: Department of Physics, Sungkyunkwan University, 2066, Seobu-ro, Jangan-gu, Suwon 16419, Republic of Korea. djkang@skku.edu.
authors.forename: Dae Joon
authors.initials: DJ
authors.lastname: Kang