title: Wafer-Scale Microwire Transistor Array Fabricated via Evaporative Assembly.
abstract: One-dimensional (1D) nano/microwires have attracted significant attention as promising building blocks for various electronic and optical device applications. The integration of these elements into functional device networks with controlled alignment and density presents a significant challenge for practical device applications. Here, we demonstrated the fabrication of wafer-scale microwire field-effect transistor (FET) arrays based on well-aligned inorganic semiconductor microwires (indium-gallium-zinc-oxide (IGZO)) and organic polymeric insulator microwires fabricated via a simple and large-area evaporative assembly technique. This microwire fabrication method offers a facile approach to precisely manipulating the channel dimensions of the FETs. The resulting solution-processed monolithic IGZO microwire FETs exhibited a maximum electron mobility of 1.02 cm(2) V(-1) s(-1) and an on/off current ratio of 1 × 10(6). The appropriate choice of the polymeric microwires used to define the channel lengths enabled fine control over the threshold voltages of the devices, which were employed to fabricate high-performance depletion-load inverters. Low-voltage-operated microwire FETs were successfully fabricated on a plastic substrate using a high-capacitance ion gel gate dielectric. The microwire fabrication technique involving evaporative assembly provided a facile, effective, and reliable method for preparing flexible large-area electronics.
authors.forename: Jae Hoon
authors.initials: JH
authors.lastname: Park
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Nanotechnology (NCNST) , Beijing 100083, P. R. China.
authors.forename: Qijun
authors.initials: Q
authors.lastname: Sun
authors.forename: Yongsuk
authors.initials: Y
authors.lastname: Choi
authors.forename: Seungwoo
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Polymer Science and Engineering, Kyungpook National University , Daegu 41566, Korea.
authors.forename: Dong Yun
authors.initials: DY
authors.lastname: Lee
authors.forename: Yong Hoon
authors.initials: YH
authors.lastname: Kim
authors.forename: Jeong Ho
authors.initials: JH
authors.lastname: Cho
keywords: blade−coating; metal oxide semiconductor; microwire transistor; plasma−induced metallization