title: Growth of Well-Aligned InN Nanorods on Amorphous Glass Substrates.
abstract: The growth of well-aligned nanorods on amorphous substrates can pave the way to fabricate large-scale and low-cost devices. In this work, we successfully prepared vertically well-aligned c-axis InN nanorods on amorphous glass substrate by metal-organic chemical vapor deposition. The products formed directly on bare glass are randomly oriented without preferential growth direction. By inserting a GaN/Ti interlayer, the nanowire alignment can be greatly improved as indicated by scanning electron microscopy and X-ray diffraction.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China. hjli2009@semi.ac.cn.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China. hjli2009@semi.ac.cn.
authors.forename: Huijie
authors.initials: H
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Guijuan
authors.initials: G
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Hongyuan
authors.initials: H
authors.lastname: Wei
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Lianshan
authors.initials: L
authors.lastname: Wang
authors.affiliation: LatticePower (Jiangxi) Corporation, No. 699 North Aixihu Road; National High-Tech Industrial Development Zone, Nanchang, 330029, Jiangxi, Peoples Republic of China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, Beijing, 100083, People's Republic of China. sh-yyang@semi.ac.cn.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China. sh-yyang@semi.ac.cn.
authors.forename: Shaoyan
authors.initials: S
authors.lastname: Yang