title: Tunneling Electroresistance Effect with Diode Characteristic for Cross-Point Memory.
abstract: Cross-point memory architecture (CPMA) by using memristors has attracted considerable attention because of its high-density integration. However, a common and significant drawback of the CPMA is related to crosstalk issues between cells by sneak currents. This study demonstrated the sneak current free resistive switching characteristic of a ferroelectric tunnel diode (FTD) memristor for a CPMA by utilizing a novel concept of a ferroelectric quadrangle and triangle barrier switch. A FTD of Au/BaTiO3 (5 nm)/Nb-doped SrTiO3 (100) was used to obtain a desirable memristive effect for the CPMA. The FTD could reversibly change the shape of the ferroelectric potential from a quadrangle to a triangle. The effect included high nonlinearity and diode characteristics. It was derived from utilizing different sequences of carrier transport mechanisms such as the direct tunneling current, Fowler-Nordheim tunneling, and thermionic emission. The FTD memristor demonstrated the feasibility of sneak current-free high-density CPMA.
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.|Department of Materials Science and Engineering, Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Hong-Sub
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Yonsei University , Seodaemun-Ku, Seoul 120-749, Korea.
authors.forename: Hyung-Ho
authors.initials: HH
authors.lastname: Park
keywords: cross-point memory; diode memristor; ferroelectrics; resistive RAM; tunneling electroresistance effect