title: Resistive Switching in All-Oxide Ferroelectric Tunnel Junctions with Ionic Interfaces.
abstract: Universal, giant and nonvolatile resistive switching is demonstrated for oxide tunnel junctions with ferroelectric PbZr0.2 Ti0.8 O3 , ferroelectric BaTiO3, and paraelectric SrTiO3 tunnel barriers. The effects are caused by reversible migration of oxygen vacancies between the tunnel barrier and bottom La2/3 Sr1/3 MnO3 electrode. The switching process, which is driven by large electric fields, is efficient down to a temperature of 5 K.
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Qi Hang
authors.initials: QH
authors.lastname: Qin
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Laura
authors.initials: L
authors.lastname: Äkäslompolo
authors.affiliation: COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.
authors.forename: Noora
authors.initials: N
authors.lastname: Tuomisto
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Lide
authors.initials: L
authors.lastname: Yao
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Sayani
authors.initials: S
authors.lastname: Majumdar
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Jaianth
authors.initials: J
authors.lastname: Vijayakumar
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Arianna
authors.initials: A
authors.lastname: Casiraghi
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Sampo
authors.initials: S
authors.lastname: Inkinen
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Binbin
authors.initials: B
authors.lastname: Chen
authors.affiliation: COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.
authors.forename: Asier
authors.initials: A
authors.lastname: Zugarramurdi
authors.affiliation: COMP Centre of Excellence, Department of Applied Physics, Aalto University, P.O. Box 11100, FI-00076, Aalto, Finland.
authors.forename: Martti
authors.initials: M
authors.lastname: Puska
authors.affiliation: NanoSpin, Department of Applied Physics, Aalto University School of Science, P.O. Box, 15100, FI-00076, Aalto, Finland.
authors.forename: Sebastiaan
authors.initials: S
authors.lastname: van Dijken
keywords: Tsu-Esaki tunneling current formula; ferroelectric tunnel junctions; oxygen vacancy migration; resistive switching; transition metal oxides