title: Magnetoresistance in Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions.
abstract: Semiconducting single-layer (SL) and few-layer MoS2 have a flat surface, free of dangling bonds. Using density functional theory coupled with non-equilibrium Green's function method, we investigate the spin-polarized transport properties of Co/2D MoS2/Co and Ni/2D MoS2/Ni junctions with MoS2 layer numbers of N = 1, 3, and 5. Well-defined interfaces are formed between MoS2 and metal electrodes. The junctions with a SL MoS2 spacer are almost metallic owing to the strong coupling between MoS2 and the ferromagnets, while those are tunneling with a few layer MoS2 spacer. Both large magnetoresistance and tunneling magnetoresistance are found when fcc or hcp Co is used as an electrode. Therefore, flat single- and few-layer MoS2 can serve as an effective nonmagnetic spacer in a magnetoresistance or tunneling magnetoresistance device with a well-defined interface.
authors.affiliation: State Key Laboratory of Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China. jinglu@pku.edu.cn.
authors.forename: Han
authors.initials: H
authors.lastname: Zhang
authors.forename: Meng
authors.initials: M
authors.lastname: Ye
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Wang
authors.forename: Ruge
authors.initials: R
authors.lastname: Quhe
authors.forename: Yuanyuan
authors.initials: Y
authors.lastname: Pan
authors.forename: Ying
authors.initials: Y
authors.lastname: Guo
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Song
authors.forename: Jinbo
authors.initials: J
authors.lastname: Yang
authors.forename: Wanlin
authors.initials: W
authors.lastname: Guo
authors.forename: Jing
authors.initials: J
authors.lastname: Lu