title: Sub-nanosecond Yb:KLu(WO4)2microchip laser.
abstract: A diode-pumped Yb:KLu(WO4)2microchip laser passively Q-switched by a Cr4+:YAG saturable absorber generated a maximum average output power of 590 mW at 1031 nm with a slope efficiency of 55%. The pulse characteristics were 690 ps/47.6 μJ at a pulse repetition frequency of 12.4 kHz. The output beam had an excellent circular profile with M2<1.05. Yb:KLu(WO4)2is very promising for ultrathin sub-ns microchip lasers.
authors.forename: P
authors.initials: P
authors.lastname: Loiko
authors.forename: J M
authors.initials: JM
authors.lastname: Serres
authors.forename: X
authors.initials: X
authors.lastname: Mateos
authors.forename: K
authors.initials: K
authors.lastname: Yumashev
authors.forename: A
authors.initials: A
authors.lastname: Yasukevich
authors.forename: V
authors.initials: V
authors.lastname: Petrov
authors.forename: U
authors.initials: U
authors.lastname: Griebner
authors.forename: M
authors.initials: M
authors.lastname: Aguiló
authors.forename: F
authors.initials: F
authors.lastname: Díaz