title: Large-Scale Sublattice Asymmetry in Pure and Boron-Doped Graphene.
abstract: The implementation of future graphene-based electronics is essentially restricted by the absence of a band gap in the electronic structure of graphene. Options of how to create a band gap in a reproducible and processing compatible manner are very limited at the moment. A promising approach for the graphene band gap engineering is to introduce a large-scale sublattice asymmetry. Using photoelectron diffraction and spectroscopy we have demonstrated a selective incorporation of boron impurities into only one of the two graphene sublattices. We have shown that in the well-oriented graphene on the Co(0001) surface the carbon atoms occupy two nonequivalent positions with respect to the Co lattice, namely top and hollow sites. Boron impurities embedded into the graphene lattice preferably occupy the hollow sites due to a site-specific interaction with the Co pattern. Our theoretical calculations predict that such boron-doped graphene possesses a band gap that can be precisely controlled by the dopant concentration. B-graphene with doping asymmetry is, thus, a novel material, which is worth considering as a good candidate for electronic applications.
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Dmitry Yu
authors.initials: DY
authors.lastname: Usachov
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|II Physikalisches Institut, Universität zu Köln , Zülpicher Strasse 77, 50937 Köln, Germany.|IFW Dresden , P.O. Box 270116, D-01171 Dresden, Germany.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Fedorov
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Oleg Yu
authors.initials: OY
authors.lastname: Vilkov
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Anatoly E
authors.initials: AE
authors.lastname: Petukhov
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Artem G
authors.initials: AG
authors.lastname: Rybkin
authors.affiliation: Max-Planck-Institut für Mikrostrukturphysik , Weinberg 2, D-06120 Halle, Germany.
authors.forename: Arthur
authors.initials: A
authors.lastname: Ernst
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU , 20080 San Sebastian, Spain.|Tomsk State University , Lenina Avenue, 36, 634050 Tomsk, Russia.
authors.forename: Mikhail M
authors.initials: MM
authors.lastname: Otrokov
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU , 20080 San Sebastian, Spain.|Tomsk State University , Lenina Avenue, 36, 634050 Tomsk, Russia.
authors.forename: Evgueni V
authors.initials: EV
authors.lastname: Chulkov
authors.affiliation: Institute of Solid State Chemistry of the Ural Branch of the Russian Academy of Sciences , Pervomayskaya Street 91, 620990 Ekaterinburg, Russia.
authors.forename: Ilya I
authors.initials: II
authors.lastname: Ogorodnikov
authors.affiliation: Institute of Solid State Chemistry of the Ural Branch of the Russian Academy of Sciences , Pervomayskaya Street 91, 620990 Ekaterinburg, Russia.
authors.forename: Mikhail V
authors.initials: MV
authors.lastname: Kuznetsov
authors.affiliation: M.V. Lomonosov Moscow State University , Leniskie Gory 1/3 199991 Moscow, Russia.
authors.forename: Lada V
authors.initials: LV
authors.lastname: Yashina
authors.affiliation: M.V. Lomonosov Moscow State University , Leniskie Gory 1/3 199991 Moscow, Russia.
authors.forename: Elmar Yu
authors.initials: EY
authors.lastname: Kataev
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Anna V
authors.initials: AV
authors.lastname: Erofeevskaya
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Vladimir Yu
authors.initials: VY
authors.lastname: Voroshnin
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.
authors.forename: Vera K
authors.initials: VK
authors.lastname: Adamchuk
authors.affiliation: Institute of Solid State Physics, Dresden University of Technology , 01062 Dresden, Germany.
authors.forename: Clemens
authors.initials: C
authors.lastname: Laubschat
authors.affiliation: St. Petersburg State University , 7/9 Universitetskaya nab, St. Petersburg, 199034, Russia.|Donostia International Physics Center (DIPC), Departamento de Fisica de Materiales and CFM-MPC UPV/EHU , 20080 San Sebastian, Spain.|Institute of Solid State Physics, Dresden University of Technology , 01062 Dresden, Germany.|IKERBASQUE, Basque Foundation for Science , 48011 Bilbao, Spain.
authors.forename: Denis V
authors.initials: DV
authors.lastname: Vyalikh
keywords: Graphene; boron; doping; electronic structure; photoemission spectroscopy; sublattice asymmetry