title: Strong-Field Resonant Dynamics in Semiconductors.
abstract: We predict that a direct band gap semiconductor (GaAs) resonantly excited by a strong ultrashort laser pulse exhibits a novel regime: kicked anharmonic Rabi oscillations. In this regime, Rabi oscillations are strongly coupled to intraband motion, and interband transitions mainly take place when electrons pass near the Brillouin zone center where electron populations undergo very rapid changes. The asymmetry of the residual population distribution induces an electric current controlled by the carrier-envelope phase of the driving pulse. The predicted effects are experimentally observable using photoemission and terahertz spectroscopies.
authors.affiliation: Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Straße 1, 85748 Garching, Germany.
authors.forename: Michael S
authors.initials: MS
authors.lastname: Wismer
authors.affiliation: Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Straße 1, 85748 Garching, Germany.
authors.forename: Stanislav Yu
authors.initials: SY
authors.lastname: Kruchinin
authors.affiliation: Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Straße 1, 85748 Garching, Germany.
authors.forename: Marcelo
authors.initials: M
authors.lastname: Ciappina
authors.affiliation: Center for Nano-Optics (CeNO) and Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30340, USA.
authors.forename: Mark I
authors.initials: MI
authors.lastname: Stockman
authors.affiliation: Max-Planck-Institut für Quantenoptik, Hans-Kopfermann-Straße 1, 85748 Garching, Germany.|Center for Nano-Optics (CeNO) and Department of Physics and Astronomy, Georgia State University, Atlanta, Georgia 30340, USA.
authors.forename: Vladislav S
authors.initials: VS
authors.lastname: Yakovlev