title: Reversible Luminescence Modulation upon an Electric Field on a Full Solid-State Device Based on Lanthanide Dimers.
abstract: Switching luminescence of lanthanide-based molecules through an external electric field is considered as a promising approach toward novel functional molecule-based devices. Classic routes use casted films and liquid electrolyte as media for redox reactions. Such protocol, even if efficient, is relatively hard to turn into an effective solid-state device. In this work, we explicitly synthesize lanthanide-based dimers whose luminescent behavior is affected by the presence of Cu(2+) ions. Excellent evaporability of the dimers and utilization of Cu(2+)-based solid-state electrolyte makes it possible to reproduce solution behavior at the solid state. Reversible modulation of Cu(2+) ions transport can be achieved by an electric field in a solid-state device, where lanthanide-related luminescence is driven by an electric field. These findings provide a proof-of-concept alternative approach for electrically driven modulation of solid-state luminescence and show promising potential for information storage media in the future.
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Yi
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Jie
authors.initials: J
authors.lastname: Shang
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Liang
authors.initials: L
authors.lastname: Pan
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Hongwei
authors.initials: H
authors.lastname: Tan
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Gang
authors.initials: G
authors.lastname: Liu
authors.affiliation: Institut des Sciences Chimiques de Rennes, UMR 6226 INSA-Rennes, 20 avenue des buttes de Coësmes, 35708 Rennes, France.
authors.forename: Gang
authors.initials: G
authors.lastname: Huang
authors.affiliation: Institut des Sciences Chimiques de Rennes, UMR 6226 INSA-Rennes, 20 avenue des buttes de Coësmes, 35708 Rennes, France.
authors.forename: Kevin
authors.initials: K
authors.lastname: Bernot
authors.affiliation: Institut des Sciences Chimiques de Rennes, UMR 6226 INSA-Rennes, 20 avenue des buttes de Coësmes, 35708 Rennes, France.
authors.forename: Olivier
authors.initials: O
authors.lastname: Guillou
authors.affiliation: Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.|Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo, Zhejiang 315201, P. R. China.
authors.forename: Run-Wei
authors.initials: RW
authors.lastname: Li
keywords: all-solid state; electrical driven; ion transport; lanthanide ions; luminescence modulation