title: Experimental GVD engineering in slow light slot photonic crystal waveguides.
abstract: The use in silicon photonics of the new optical materials developed in soft matter science (e.g. polymers, liquids) is delicate because their low refractive index weakens the confinement of light and prevents an efficient control of the dispersion properties through the geometry. We experimentally demonstrate that such materials can be incorporated in 700 μm long slot photonic crystal waveguides, and hence can benefit from both slow-light field enhancement effect and slot-induced ultra-small effective areas. Additionally, we show that their dispersion can be engineered from anomalous to normal regions, along with the presence of multiple zero group velocity dispersion (ZGVD) points exhibiting Normalized Delay Bandwidth Product as high as 0.156. The reported results provide experimental evidence for an accurate control of the dispersion properties of fillable periodical slotted structures in silicon photonics, which is of direct interest for on-chip all-optical data treatment using nonlinear optical effects in hybrid-on-silicon technologies.
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.|Laboratoire Charles Fabry, Institut d'Optique Graduate School, CNRS, Université Paris Saclay, 2 Avenue Augustin Fresnel, 91127 Palaiseau Cedex, France.
authors.forename: Samuel
authors.initials: S
authors.lastname: Serna
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.
authors.forename: Pierre
authors.initials: P
authors.lastname: Colman
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.
authors.forename: Weiwei
authors.initials: W
authors.lastname: Zhang
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.
authors.forename: Xavier
authors.initials: X
authors.lastname: Le Roux
authors.affiliation: Zurich Research Laboratory, IBM Research GmbH, Ruschlikon 8803, Switzerland.
authors.forename: Charles
authors.initials: C
authors.lastname: Caer
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
authors.affiliation: Institut d'Electronique Fondamentale, Univ Paris-Sud, CNRS UMR 8622, Université Paris Saclay, Bat. 220, 91405 Orsay Cedex, France.
authors.forename: Eric
authors.initials: E
authors.lastname: Cassan