title: Simultaneous Selective-Area and Vapor-Liquid-Solid Growth of InP Nanowire Arrays.
abstract: Selective-area epitaxy is highly successful in producing application-ready size-homogeneous arrays of III-V nanowires without the need to use metal catalysts. Previous works have demonstrated excellent control of nanowire properties but the growth mechanisms remain rather unclear. Herein, we report a detailed growth study revealing that fundamental growth mechanisms of pure wurtzite InP ⟨111⟩A nanowires can indeed differ significantly from the simple picture of a facet-limited selective-area growth process. A dual growth regime with and without metallic droplet is found to coexist under the same growth conditions for different diameter nanowires. Incubation times and highly nonmonotonous growth rate behaviors are revealed and explained within a dedicated kinetic model.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Qian
authors.initials: Q
authors.lastname: Gao
authors.affiliation: St. Petersburg Academic University , Khlopina 8/3, 194021 St. Petersburg, Russia.|Ioffe Physical Technical Institute of the Russian Academy of Sciences , Politekhnicheskaya 26, 194021 St. Petersburg, Russia.|ITMO University , Kronverkskiy pr. 49, 197101 St. Petersburg, Russia.
authors.forename: Vladimir G
authors.initials: VG
authors.lastname: Dubrovskii
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Philippe
authors.initials: P
authors.lastname: Caroff
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Jennifer
authors.initials: J
authors.lastname: Wong-Leung
authors.affiliation: Australian National Fabrication Facility, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Li
authors.initials: L
authors.lastname: Li
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Yanan
authors.initials: Y
authors.lastname: Guo
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Lan
authors.initials: L
authors.lastname: Fu
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University , Canberra, Australian Capital Territory 2601, Australia.
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish
keywords: III−V nanowires; metal-catalyst; metalorganic vapor phase epitaxy; nucleation; selective-area epitaxy; vapor−liquid−solid growth