title: Structural and electrical properties of oxygen complexes in Cz and FZ silicon crystals implanted with carbon ions.
abstract: We present a comparative study of thermal donor (TD) center formation mechanisms as a result of carbon ion implantation into float zone (FZ-Si) and Czochralski (Cz-Si) silicon crystals. The kinetics of the TD center formation and transformation of their structure during annealing have been investigated. Also, the TD center formation takes place after additional oxygen implantation into FZ/Cz-Si, and an important role of recoil oxygen atoms (from the screen oxide) has been demonstrated for the FZ-Si case. Their concentration in the Si surface layer depends on the implantation dose and the screen oxide thickness, reaching up to values 10(18) to 10(19) cm(-3), which is comparable with the oxygen concentration in Cz-Si. These oxygen atoms can lead to additional thermal donor centers generation, especially in the FZ-Si.
  34.50.Dy; 61.10.-i; 68.35.Dv.
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine. romb@isp.kiev.ua.
authors.forename: Boris
authors.initials: B
authors.lastname: Romanyuk
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine.
authors.forename: Victor
authors.initials: V
authors.lastname: Melnik
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine.
authors.forename: Valentin
authors.initials: V
authors.lastname: Popov
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine.
authors.forename: Vilik
authors.initials: V
authors.lastname: Babich
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine.
authors.forename: Vasyl
authors.initials: V
authors.lastname: Kladko
authors.affiliation: V. Lashkarev Institute of Semiconductor Physics NAS of Ukraine, 41 Prospect Nauki, 03028, Kyiv, Ukraine.
authors.forename: Olexandr
authors.initials: O
authors.lastname: Gudymenko
authors.affiliation: Institute of High Technologies of Kyiv National T. Shevchenko University, 2 Glushkov av, 01601, Kyiv, Ukraine.
authors.forename: Volodimir
authors.initials: V
authors.lastname: Ilchenko
authors.affiliation: Institute of High Technologies of Kyiv National T. Shevchenko University, 2 Glushkov av, 01601, Kyiv, Ukraine.
authors.forename: Iegor
authors.initials: I
authors.lastname: Vasyliev
authors.affiliation: Institute of High Technologies of Kyiv National T. Shevchenko University, 2 Glushkov av, 01601, Kyiv, Ukraine.
authors.forename: Andrii
authors.initials: A
authors.lastname: Goriachko
keywords: Carbon; Ion implantation; Oxygen; P-n junction; Silicon; Thermal donor