title: Direct Measurement of the Electrical Abruptness of a Nanowire p-n Junction.
abstract: Electrostatic potential maps of GaAs nanowire, p-n junctions have been measured via off-axis electron holography and compared to results from in situ electrical probing, and secondary electron emission microscopy using scanning electron microscopy. The built-in potential and depletion length of an axial junction was found to be 1.5 ± 0.1 V and 74 ± 9 nm, respectively, to be compared with 1.53 V and 64 nm of an abrupt junction of the same end point carrier concentrations. Associated with the switch from Te to Zn dopant precursor was a reduction in GaAs nanowire diameter 3 ± 1 nm that occurred prior to the junction center (n = p) and was followed by a rapid increase in Zn doping. The delay in Zn incorporation is attributed to the time required for Zn to equilibrate within the Au catalyst.
authors.affiliation: Department of Physics, Simon Fraser University , 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: Ali
authors.initials: A
authors.lastname: Darbandi
authors.affiliation: Department of Physics, Simon Fraser University , 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: James C
authors.initials: JC
authors.lastname: McNeil
authors.affiliation: Department of Physics, Simon Fraser University , 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: Azadeh
authors.initials: A
authors.lastname: Akhtari-Zavareh
authors.affiliation: Department of Physics, Simon Fraser University , 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: Simon P
authors.initials: SP
authors.lastname: Watkins
authors.affiliation: Department of Physics, Simon Fraser University , 8888 University Drive, Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: Karen L
authors.initials: KL
authors.lastname: Kavanagh
keywords: GaAs; Semiconductor nanowires; built-in potential; carrier profiles; current−voltage; electrical characteristics; junctions; off-axis electron holography; secondary electron emission