title: Graphene ballistic nano-rectifier with very high responsivity.
abstract: Although graphene has the longest mean free path of carriers of any known electronic material, very few novel devices have been reported to harness this extraordinary property. Here we demonstrate a ballistic nano-rectifier fabricated by creating an asymmetric cross-junction in single-layer graphene sandwiched between boron nitride flakes. A mobility ∼200,000 cm(2) V(-1) s(-1) is achieved at room temperature, well beyond that required for ballistic transport. This enables a voltage responsivity as high as 23,000 mV mW(-1) with a low-frequency input signal. Taking advantage of the output channels being orthogonal to the input terminals, the noise is found to be not strongly influenced by the input. Hence, the corresponding noise-equivalent power is as low as 0.64 pW Hz(-1/2). Such performance is even comparable to superconducting bolometers, which however need to operate at cryogenic temperatures. Furthermore, output oscillations are observed at low temperatures, the period of which agrees with the lateral size quantization.
authors.affiliation: School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK.|Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: Gregory
authors.initials: G
authors.lastname: Auton
authors.affiliation: School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK.
authors.forename: Jiawei
authors.initials: J
authors.lastname: Zhang
authors.affiliation: School of Physics and Astronomy, University of Manchester, M13 9PL Manchester, UK.
authors.forename: Roshan Krishna
authors.initials: RK
authors.lastname: Kumar
authors.affiliation: School of Physics and Center of Nanoelectronics, Shandong University, Jinan 250100, China.
authors.forename: Hanbin
authors.initials: H
authors.lastname: Wang
authors.affiliation: School of Physics and Center of Nanoelectronics, Shandong University, Jinan 250100, China.
authors.forename: Xijian
authors.initials: X
authors.lastname: Zhang
authors.affiliation: School of Physics and Center of Nanoelectronics, Shandong University, Jinan 250100, China.
authors.forename: Qingpu
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Manchester Centre for Mesoscience and Nanotechnology, University of Manchester, Manchester M13 9PL, UK.
authors.forename: Ernie
authors.identifier: 0000-0001-9412-6795
authors.initials: E
authors.lastname: Hill
authors.affiliation: School of Electrical and Electronic Engineering, University of Manchester, Manchester M13 9PL, UK.|School of Physics and Center of Nanoelectronics, Shandong University, Jinan 250100, China.
authors.forename: Aimin
authors.initials: A
authors.lastname: Song