title: Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots.
abstract: InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.|School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.|School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
authors.forename: Wenwu
authors.initials: W
authors.lastname: Pan
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.|School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.|School of Physics, University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China.
authors.forename: Juanjuan
authors.initials: J
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.
authors.forename: Chunfang
authors.initials: C
authors.lastname: Cao
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China.|Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296, Gothenburg, Sweden.
authors.forename: Shumin
authors.initials: S
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, 200050, China. qgong@mail.sim.ac.cn.
authors.forename: Qian
authors.initials: Q
authors.lastname: Gong
keywords: GaAsBi; InAs; MBE; Quantum dot; Thermal stability