Piezotronic Effect Modulated Heterojunction Electron Gas in AlGaN/AlN/GaN Heterostructure Microwire.
The piezotronic effect is applied to modulate the physical properties of heterojunction electron gas and thus tune the electric transport in AlGaN/AlN/GaN heterostructure microwires. At room temperature, the conductance is increased by 165% under -1.78% compressive strains, and reduced by 48% under 1.78% tensile strains; at 77 K, this modulating effect is further improved by 890% and 940% under compressive and tensile strains, respectively.
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.|Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China.
Xingfu
X
Wang
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
Ruomeng
R
Yu
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
Chunyan
C
Jiang
Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
Weiguo
W
Hu
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
Wenzhuo
W
Wu
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
Yong
Y
Ding
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
Wenbo
W
Peng
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, Guangdong Engineering Technology Research Center of Optoelectronic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou, 510631, China.
Shuti
S
Li
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing, 100083, China.
Zhong Lin
ZL
Wang
AlGaN/AlN/GaN; electron gas; heterojunctions; microwires; piezotronic effect