Passivated ambipolar black phosphorus transistors.
We report the first air-passivated ambipolar BP transistor formed by applying benzyl viologen, which serves as a surface charge transfer donor for BP flakes. The passivated BP devices exhibit excellent stability under both an ambient atmosphere and vacuum; their transistor performance is maintained semi-permanently. Unlike their intrinsic p-type properties, passivated BP devices present advantageous ambipolar properties with much higher electron mobility up to ∼83 cm(2) V(-1) s(-1) from 2-terminal measurement at 300 K, compared to other reported studies on n-type BP transistors. On the basis of the n-type doping effect that originated from benzyl viologen, we also systematically investigated the BP thickness dependence of our devices on electrical properties, in which we found the best electron transport performance to be attained when an ∼10 nm thick BP flake was used.
SKKU Advanced Institute of Nano-Technology (SAINT), Samsung-SKKU Graphene/2D Center (SSGC), Department of Nano Science and Technology, Sungkyunkwan University (SKKU), 2066, Seobu-ro, Jangan-gu, Suwon, Gyeonggi-do 16419, Korea. yoowj@skku.edu.
Dewu
D
Yue
Daeyeong
D
Lee
Young Dae
YD
Jang
Min Sup
MS
Choi
Hye Jin
HJ
Nam
Duk-Young
DY
Jung
Won Jong
WJ
Yoo