Anomalous photoluminescence in InP1-xBix.
Low temperature photoluminescence (PL) from InP1-xBix thin films with Bi concentrations in the 0-2.49% range reveals anomalous spectral features with strong and very broad (linewidth of 700 nm) PL signals compared to other bismide alloys. Multiple transitions are observed and their energy levels are found much smaller than the band-gap measured from absorption measurements. These transitions are related to deep levels confirmed by deep level transient spectroscopy, which effectively trap free holes and enhance radiative recombination. The broad luminescence feature is beneficial for making super-luminescence diodes, which can theoretically enhance spatial resolution beyond 1 μm in optical coherent tomography (OCT).
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
Xiaoyan
X
Wu
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
Xiren
X
Chen
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
Wenwu
W
Pan
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
Peng
P
Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
Liyao
L
Zhang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.
Yaoyao
Y
Li
Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165, China.
Hailong
H
Wang
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.|National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
Kai
K
Wang
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
Jun
J
Shao
State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, CAS, 865 Changning Road, Shanghai 200050, China.|Department of Microtechnology and Nanoscience, Chalmers University of Technology, 41296 Gothenburg, Sweden.
Shumin
S
Wang