Selective Deposition of SiO2 on Ion Conductive Area of Soda-lime Glass Surface.
Selective deposition of SiO2 nanoparticles was demonstrated on a soda-lime glass surface with a periodic sodium deficient pattern formed using the electrical nanoimprint. Positively charged SiO2 particles generated using corona discharge in a cyclic siloxane vapor, were selectively deposited depending on the sodium pattern. For such phenomena to occur, the sodium ion migration to the cathode side was indispensable to the electrical charge compensation on the glass surface. Therefore, the deposition proceeded preferentially outside the alkali-deficient area. Periodic SiO2 structures with 424 nm and 180 nm heights were obtained using one-dimensional (6 μm period) and two-dimensional (500 nm period) imprinted patterns.
Department of Electrical and Electronic Engineering, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan.
Daisuke
D
Sakai
Department of Computer Science, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan.
Kenji
K
Harada
Department of Computer Science, Kitami Institute of Technology, 165 Koen-cho, Kitami, Hokkaido 090-8507, Japan.
Yuichiro
Y
Hara
Art, Science and Technology Center for Cooperative Research, Kyushu University, 6-1 Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan.
Hiroshi
H
Ikeda
Innovative Technology Research Center, Asahi Glass Co., Ltd., 1-1 Suehiro-cho, Tsurumi-ku, Yokohama, Kanagawa, 230-0045, Japan.
Shiro
S
Funatsu
Innovative Technology Research Center, Asahi Glass Co., Ltd., 1-1 Suehiro-cho, Tsurumi-ku, Yokohama, Kanagawa, 230-0045, Japan.
Keiichiro
K
Uraji
Innovative Technology Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa, 221-8755, Japan.
Toshio
T
Suzuki
Innovative Technology Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa, 221-8755, Japan.
Yuichi
Y
Yamamoto
Innovative Technology Research Center, Asahi Glass Co., Ltd., 1150 Hazawa-cho, Kanagawa-ku, Yokohama, Kanagawa, 221-8755, Japan.
Kiyoshi
K
Yamamoto
Research Institute for Electronic Science, Hokkaido University, Kita20, Nishi10, Kitaku, Sapporo, Hokkaido 001-0020, Japan.
Naoki
N
Ikutame
Research Institute for Electronic Science, Hokkaido University, Kita20, Nishi10, Kitaku, Sapporo, Hokkaido 001-0020, Japan.
Keiga
K
Kawaguchi
Research Institute for Electronic Science, Hokkaido University, Kita20, Nishi10, Kitaku, Sapporo, Hokkaido 001-0020, Japan.
Hideo
H
Kaiju
Research Institute for Electronic Science, Hokkaido University, Kita20, Nishi10, Kitaku, Sapporo, Hokkaido 001-0020, Japan.
Junji
J
Nishii