DNA Origami Mask for Sub-Ten-Nanometer Lithography.
DNA nanotechnology is currently widely explored and especially shows promises for advanced lithography due to its ability to define nanometer scale features. We demonstrate a 9 × 14 nm(2) hole pattern transfer from DNA origami into an SiO2 layer with a sub-10-nm resolution using anhydrous HF vapor in a semiconductor etching machine. We show that the resulting SiO2 pattern inherits its shape from the DNA structure within a process time ranging from 30 to 60 s at an etching rate of 0.2 nm/s. At 600 s of etching, the SiO2 pattern meets corrosion and the overall etching reaction is blocked. These results, in addition to the entire surface coverage by magnesium occurring on the substrate at a density of 1.1 × 10(15) atom/cm(2), define a process window, fabrication rules, and limits for DNA-based lithography.
University Grenoble Alpes , F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus , F-38054 Grenoble, France.
Cheikh Tidiane
CT
Diagne
University Grenoble Alpes , F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus , F-38054 Grenoble, France.
Christophe
C
Brun
University Grenoble Alpes , F-38000 Grenoble, France.|CEA, INAC, MINATEC Campus , F-38000 Grenoble, France.
Didier
D
Gasparutto
University Grenoble Alpes , F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus , F-38054 Grenoble, France.
Xavier
X
Baillin
University Grenoble Alpes , F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus , F-38054 Grenoble, France.
Raluca
R
Tiron
DNA nanostructures; anhydrous HF vapor etching; bioinspired lithography; directed self-assembly; nanoelectronics