Real-time device-scale imaging of conducting filament dynamics in resistive switching materials.
ReRAM is a compelling candidate for next-generation non-volatile memory owing to its various advantages. However, fluctuation of operation parameters are critical weakness occurring failures in 'reading' and 'writing' operations. To enhance the stability, it is important to understand the mechanism of the devices. Although numerous studies have been conducted using AFM or TEM, the understanding of the device operation is still limited due to the destructive nature and/or limited imaging range of the previous methods. Here, we propose a new hybrid device composed of ReRAM and LED enabling us to monitor the conducting filament (CF) configuration on the device scale during resistive switching. We directly observe the change in CF configuration across the whole device area through light emission from our hybrid device. In contrast to former studies, we found that minor CFs were formed earlier than major CF contributing to the resistive switching. Moreover, we investigated the substitution of a stressed major CF with a fresh minor CF when large fluctuation of operation voltage appeared after more than 50 times of resistive switching in atmospheric condition. Our results present an advancement in the understanding of ReRAM operation mechanism, and a step toward stabilizing the fluctuations in ReRAM switching parameters.
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Keundong
K
Lee
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Youngbin
Y
Tchoe
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Hosang
H
Yoon
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Hyeonjun
H
Baek
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Kunook
K
Chung
Department of Physics, Konkuk University, Seoul, 143-701, Korea.
Sangik
S
Lee
Department of Physics, Konkuk University, Seoul, 143-701, Korea.
Chansoo
C
Yoon
Department of Physics, Konkuk University, Seoul, 143-701, Korea.
Bae Ho
BH
Park
Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
Gyu-Chul
GC
Yi