Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes.
The electrical behaviour of Schottky barrier diodes realized on vertically standing individual GaN nanorods and array of nanorods is investigated. The Schottky diodes on individual nanorod show highest barrier height in comparison with large area diodes on nanorods array and epitaxial film which is in contrast with previously published work. The discrepancy between the electrical behaviour of nanoscale Schottky diodes and large area diodes is explained using cathodoluminescence measurements, surface potential analysis using Kelvin probe force microscopy and 1ow frequency noise measurements. The noise measurements on large area diodes on nanorods array and epitaxial film suggest the presence of barrier inhomogeneities at the metal/semiconductor interface which deviate the noise spectra from Lorentzian to 1/f type. These barrier inhomogeneities in large area diodes resulted in reduced barrier height whereas due to the limited role of barrier inhomogeneities in individual nanorod based Schottky diode, a higher barrier height is obtained.
Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.|Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi-110016, India.
Ashutosh
A
Kumar
Max Planck Institute for the Science of Light, Günther-Scharowsky-Straße 1/Bau 24, 91058 Erlangen, Germany.
M
M
Heilmann
Max Planck Institute for the Science of Light, Günther-Scharowsky-Straße 1/Bau 24, 91058 Erlangen, Germany.|Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Institute of Optics, Information and Photonics, Staudtstr. 7/B2, 91058 Erlangen, Germany.
Michael
M
Latzel
Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi-110016, India.
Raman
R
Kapoor
Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.
Intu
I
Sharma
Max Planck Institute for the Science of Light, Günther-Scharowsky-Straße 1/Bau 24, 91058 Erlangen, Germany.
M
M
Göbelt
Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Institute of Optics, Information and Photonics, Staudtstr. 7/B2, 91058 Erlangen, Germany.|Institute of Nano-Architectures for Energy Conversion, Helmholtz - Zentrum Berlin für Materialien und Energie GmbH, Hahn-Meitner-Platz 1, 14109 Berlin, Germany.
Silke H
SH
Christiansen
Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.|Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi-110016, India.
Vikram
V
Kumar
Department of Physics, Indian Institute of Technology Delhi, New Delhi-110016, India.|Nanoscale Research Facility, Indian Institute of Technology Delhi, New Delhi-110016, India.
Rajendra
R
Singh