General Thermal Texturization Process of MoS2 for Efficient Electrocatalytic Hydrogen Evolution Reaction.
Molybdenum disulfide (MoS2) has been widely examined as a catalyst containing no precious metals for the hydrogen evolution reaction (HER); however, these examinations have utilized synthesized MoS2 because the pristine MoS2 mineral is known to be a poor catalyst. The fundamental challenge with pristine MoS2 is the inert HER activity of the predominant (0001) basal surface plane. In order to achieve high HER performance with pristine MoS2, it is essential to activate the basal plane. Here, we report a general thermal process in which the basal plane is texturized to increase the density of HER-active edge sites. This texturization is achieved through a simple thermal annealing procedure in a hydrogen environment, removing sulfur from the MoS2 surface to form edge sites. As a result, the process generates high HER catalytic performance in pristine MoS2 across various morphologies such as the bulk mineral, films composed of micron-scale flakes, and even films of a commercially available spray of nanoflake MoS2. The lowest overpotential (η) observed for these samples was η = 170 mV to obtain 10 mA/cm(2) of HER current density.
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Daisuke
D
Kiriya
Department of Chemical and Biomolecular Engineering, University of California at Berkeley , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.|Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Peter
P
Lobaccaro
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Hnin Yin Yin
HY
Nyein
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Peyman
P
Taheri
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.|Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Mark
M
Hettick
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Hiroshi
H
Shiraki
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Carolin M
CM
Sutter-Fella
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Peida
P
Zhao
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Wei
W
Gao
Department of Chemical and Biomolecular Engineering, University of California at Berkeley , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Roya
R
Maboudian
Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
Joel W
JW
Ager
Department of Electrical Engineering and Computer Sciences, University of California at Berkeley , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.|Berkeley Sensor & Actuator Center, University of California , Berkeley, California 94720, United States.
Ali
A
Javey
MoS2; edge site; hydrogen evolution reaction; hydrogen thermal processing; thermal texturization