Atom-scale compositional distribution in InAlAsSb-based triple junction solar cells by atom probe tomography.
The analysis by atom probe tomography (APT) of InAlAsSb layers with applications in triple junction solar cells (TJSCs) has shown the existence of In- and Sb-rich regions in the material. The composition variation found is not evident from the direct observation of the 3D atomic distribution and because of this a statistical analysis has been required. From previous analysis of these samples, it is shown that the small compositional fluctuations determined have a strong effect on the optical properties of the material and ultimately on the performance of TJSCs.
IMEYMAT, Dpto. de Ciencia de los Materiales e I.M. y Q.I., Facultad de Ciencias, Universidad de Cádiz, Campus Río San Pedro, 11510 Puerto Real, Cádiz, Spain.
J
J
Hernández-Saz
M
M
Herrera
F J
FJ
Delgado
S
S
Duguay
T
T
Philippe
M
M
Gonzalez
J
J
Abell
R J
RJ
Walters
S I
SI
Molina