Alcohol-Mediated Resistance-Switching Behavior in Metal-Organic Framework-Based Electronic Devices.
Metal-organic frameworks (MOFs) have drawn increasing attentions as promising candidates for functional devices. Herein, we present MOF films in constructing memory devices with alcohol mediated resistance switching property, where the resistance state is controlled by applying alcohol vapors to achieve multilevel information storage. The ordered packing mode and the hydrogen bonding system of the guest molecules adsorbed in MOF crystals are shown to be the reason for the alcohol mediated electrical switching. This chemically mediated memory device can be a candidate in achieving environment-responsive devices and exhibits potential applications in wearable information storage systems.
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Yaqing
Y
Liu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Hong
H
Wang
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Wenxiong
W
Shi
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China.
Weina
W
Zhang
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Jiancan
J
Yu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Bevita K
BK
Chandran
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Chenlong
C
Cui
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Bowen
B
Zhu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Zhiyuan
Z
Liu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Bin
B
Li
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Cai
C
Xu
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China.
Zhiling
Z
Xu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore.
Shuzhou
S
Li
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China.
Wei
W
Huang
Key Laboratory of Flexible Electronics, Institute of Advanced Materials, Nanjing Tech University, 30 South Puzhu Road, Nanjing, 211816, P. R. China. fengweihuo@outlook.com.
Fengwei
F
Huo
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798, Singapore. chenxd@ntu.edu.sg.
Xiaodong
X
Chen
chemically mediated memory; flexible devices; metal-organic frameworks; resistance switching; supramolecular chemistry