Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition.
With the continuous scaling of resistive random access memory (RRAM) devices, in-depth understanding of the physical mechanism and the material issues, particularly by directly studying integrated cells, become more and more important to further improve the device performances. In this work, HfO2-based integrated 1-transistor-1-resistor (1T1R) RRAM devices were processed in a standard 0.25 μm complementary-metal-oxide-semiconductor (CMOS) process line, using a batch atomic layer deposition (ALD) tool, which is particularly designed for mass production. We demonstrate a systematic study on TiN/Ti/HfO2/TiN/Si RRAM devices to correlate key material factors (nano-crystallites and carbon impurities) with the filament type resistive switching (RS) behaviours. The augmentation of the nano-crystallites density in the film increases the forming voltage of devices and its variation. Carbon residues in HfO2 films turn out to be an even more significant factor strongly impacting the RS behaviour. A relatively higher deposition temperature of 300 °C dramatically reduces the residual carbon concentration, thus leading to enhanced RS performances of devices, including lower power consumption, better endurance and higher reliability. Such thorough understanding on physical mechanism of RS and the correlation between material and device performances will facilitate the realization of high density and reliable embedded RRAM devices with low power consumption.
Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.|IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Gang
G
Niu
Department of Electronics, Information &Communication Engineering, Sejong University, Neungdong-ro 209, Gwangjin-gu, Seoul 143-747, Korea.
Hee-Dong
HD
Kim
ASM, Kapeldreef 75, Leuven 3001, Belgium.
Robin
R
Roelofs
IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Eduardo
E
Perez
IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Markus Andreas
MA
Schubert
IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Peter
P
Zaumseil
IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Ioan
I
Costina
IHP GmbH/Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, Frankfurt (Oder) 15236, Germany.
Christian
C
Wenger
D016248:Computer Storage Devices; D017097:Electric Impedance; D004867:Equipment Design; D006195:Hafnium / Q000737:chemistry*; D006358:Hot Temperature; D010087:Oxides / Q000737:chemistry*; D012666:Semiconductors; D012828:Silicones / Q000737:chemistry; D014025:Titanium / Q000737:chemistry
D010087:Oxides; D012828:Silicones; C545179:hafnium oxide; D014025:Titanium; D006195:Hafnium