Influencing Mechanism of the Selenization Temperature and Time on the Power Conversion Efficiency of Cu2ZnSn(S,Se)4-Based Solar Cells.
Cu2ZnSn(S,Se)4 (CZTSSe) films were deposited on the Mo-coated glass substrates, and the CZTSSe-based solar cells were successfully fabricated by a facile solution method and postselenization technique. The influencing mechanisms of the selenization temperature and time on the power conversion efficiency (PCE), short-circuit current density (Jsc), open-circuit voltage (Voc), and fill factor (FF) of the solar cell are systematically investigated by studying the change of the shunt conductance (Gsh), series resistance (Rs), diode ideal factor (n), and reversion saturation current density (J0) with structure and crystal quality of the CZTSSe film and CZTSSe/Mo interface selenized at various temperatures and times. It is found that a Mo(S1-x,Sex)2 (MSSe) layer with hexagonal structure exists at the CZTSSe/Mo interface at the temperature of 500 °C, and its thickness increases with increasing selenization temperature and time. The MSSe has a smaller effect on the Rs, but it has a larger influence on the Gsh, n, and J0. The PCE, Voc, and FF change dominantly with Gsh, n, and J0, while Jsc changes with Rs and Gsh, but not Rs. These results suggest that the effect of the selenization temperature and time on the PCE is dominantly contributed to the change of the CZTSSe/CdS p-n junction and CZTSSe/MSSe interface induced by variation of the quality of the CZTSSe film and thickness of MSSe in the selenization process. By optimizing the selenization temperature and time, the highest PCE of 7.48% is obtained.
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University , Changchun 130012, China.|State Key Lab of Superhard Materials, College of Physics, Jilin University , Changchun 130012, China.
Zhen-Yu
ZY
Xiao
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University , Changchun 130012, China.|State Key Lab of Superhard Materials, College of Physics, Jilin University , Changchun 130012, China.
Bin
B
Yao
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University , Changchun 130012, China.|State Key Lab of Superhard Materials, College of Physics, Jilin University , Changchun 130012, China.
Yong-Feng
YF
Li
Key Laboratory of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University , Changchun 130012, China.|State Key Lab of Superhard Materials, College of Physics, Jilin University , Changchun 130012, China.
Zhan-Hui
ZH
Ding
State Key Laboratory of Inorganic Synthesis and Preparative Chemistry, College of Chemistry, Jilin University , 2699 Qianjin Street, Changchun 130012, China.
Zhong-Min
ZM
Gao
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , No. 3888 Dongnanhu Road, Changchun 130033, China.
Hai-Feng
HF
Zhao
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , No. 3888 Dongnanhu Road, Changchun 130033, China.
Li-Gong
LG
Zhang
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , No. 3888 Dongnanhu Road, Changchun 130033, China.
Zhen-Zhong
ZZ
Zhang
Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education, Jilin Normal University , Siping 136000, China.
Ying-Rui
YR
Sui
State Key Laboratory of Rare Earth Resource Utilization, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences , 5625 Renmin Street, Changchun130022, China.
Gang
G
Wang
Cu2ZnSn(S,Se)4; kesterite structure; selenization; thin-film solar cell