Pressure-Induced Charge Transfer Doping of Monolayer Graphene/MoS2 Heterostructure.
A unique way of achieving controllable, pressure-induced charge transfer doping in the graphene/MoS2 heterostructure is proposed. The charge transfer causes an upward shift in the Dirac point with respect to Fermi level at a rate of 15.7 meV GPa(-1) as a function of applied hydrostatic pressure, leading to heavy p-type doping in graphene. The doping was confirmed by I2D /IG measurements.
Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
Tribhuwan
T
Pandey
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
Avinash P
AP
Nayak
Department of Geological Sciences, The University of Texas at Austin, Austin, TX, 78712, USA.
Jin
J
Liu
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
Samuel T
ST
Moran
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
Joon-Seok
JS
Kim
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955, Saudi Arabia.
Lain-Jong
LJ
Li
Department of Geological Sciences, The University of Texas at Austin, Austin, TX, 78712, USA.|Center for High Pressure Science and Technology Advanced Research (HPSTAR), Shanghai, 201203, P. R. China.
Jung-Fu
JF
Lin
Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78712, USA.
Deji
D
Akinwande
Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India.
Abhishek K
AK
Singh
Raman spectra; doping; graphene; heterostructures; hydrostatic pressure; molybdenum disulfide