Molecular Doping the Topological Dirac Semimetal Na3Bi across the Charge Neutrality Point with F4-TCNQ.
We perform low-temperature transport and high-resolution photoelectron spectroscopy on 20 nm thin film topological Dirac semimetal Na3Bi grown by molecular beam epitaxy. We demonstrate efficient electron depletion ∼10(13) cm(-2) of Na3Bi via vacuum deposition of molecular F4-TCNQ without degrading the sample mobility. For samples with low as-grown n-type doping (1 × 10(12) cm(-2)), F4-TCNQ doping can achieve charge neutrality and even a net p-type doping. Photoelectron spectroscopy and density functional theory are utilized to investigate the behavior of F4-TCNQ on the Na3Bi surface.
School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Clayton Victoria 3800, Australia.
Mark T
MT
Edmonds
School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Clayton Victoria 3800, Australia.
Jack
J
Hellerstedt
Department of Imaging and Applied Physics, Curtin University , Bentley, Western Australia 6102, Australia.
Kane M
KM
O'Donnell
Australian Synchrotron , 700 Blackburn Road, Clayton, Victoria 3168, Australia.
Anton
A
Tadich
School of Physics and Astronomy and Monash Centre for Atomically Thin Materials, Clayton Victoria 3800, Australia.
Michael S
MS
Fuhrer
Na3Bi; surface transfer doping; thin film; topological Dirac semimetal