Doping-enhanced radiative efficiency enables lasing in unpassivated GaAs nanowires.
Nanolasers hold promise for applications including integrated photonics, on-chip optical interconnects and optical sensing. Key to the realization of current cavity designs is the use of nanomaterials combining high gain with high radiative efficiency. Until now, efforts to enhance the performance of semiconductor nanomaterials have focused on reducing the rate of non-radiative recombination through improvements to material quality and complex passivation schemes. Here we employ controlled impurity doping to increase the rate of radiative recombination. This unique approach enables us to improve the radiative efficiency of unpassivated GaAs nanowires by a factor of several hundred times while also increasing differential gain and reducing the transparency carrier density. In this way, we demonstrate lasing from a nanomaterial that combines high radiative efficiency with a picosecond carrier lifetime ready for high speed applications.
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Tim
T
Burgess
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Dhruv
D
Saxena
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Sudha
S
Mokkapati
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Zhe
Z
Li
Centre for Quantum and Optical Science, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.
Christopher R
CR
Hall
Centre for Quantum and Optical Science, Swinburne University of Technology, Hawthorn, Victoria 3122, Australia.
Jeffrey A
JA
Davis
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA.
Yuda
Y
Wang
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.|Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221-0011, USA.
Leigh M
LM
Smith
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Lan
L
Fu
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Philippe
P
Caroff
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Hark Hoe
HH
Tan
Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, Australian Capital Territory 2601, Australia.
Chennupati
C
Jagadish