High Sensitivity Polymer Visible-Near Infrared Photodetectors via an Inverted Device Structure and Manipulation of Injection Barrier Height.
Visible-near infrared photodetectors are reported with excellent overall device parameters from conjugated polymers with different optical bandgaps by optimal design in device structure and optimizing the thickness of the photoactive layer in nanoscale. The best visible-near infrared photodetectors show high detectivity (D*) of 1.7 × 10(13) Jones at a wavelength of 710 nm, which is among one of the best results of polymer photodetectors reported to date.
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Siping
S
Wu
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Biao
B
Xiao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Baofeng
B
Zhao
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Zhicai
Z
He
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Hongbin
H
Wu
Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China.
Yong
Y
Cao
detectivity; injection barrier height; inverted device structure; nanophotonics; polymer photodetectors