Near-theoretical fracture strengths in native and oxidized silicon nanowires.
In this letter, fracture strengths σ f of native and oxidized silicon nanowires (SiNWs) were determined via atomic force microscopy bending experiments and nonlinear finite element analysis. In the native SiNWs, σ f in the Si was comparable to the theoretical strength of Si〈111〉, ≈22 GPa. In the oxidized SiNWs, σ f in the SiO2 was comparable to the theoretical strength of SiO2, ≈6 to 12 GPa. The results indicate a change in the failure mechanism between native SiNWs, in which fracture originated via inter-atomic bond breaking or atomic-scale defects in the Si, and oxidized SiNWs, in which fracture initiated from surface roughness or nano-scale defects in the SiO2.
Material Measurement Laboratory, National Institute of Standards and Technology, Boulder, CO 80305, USA.
Frank W
FW
DelRio
Ryan M
RM
White
Sergiy
S
Krylyuk
Albert V
AV
Davydov
Lawrence H
LH
Friedman
Robert F
RF
Cook