Nanoscale Positioning of Single-Photon Emitters in Atomically Thin WSe2.
Single-photon emitters in monolayer WSe2 are created at the nanoscale gap between two single-crystalline gold nanorods. The atomically thin semiconductor conforms to the metal nanostructure and is bent at the position of the gap. The induced strain leads to the formation of a localized potential well inside the gap. Single-photon emitters are localized there with a precision better than 140 nm.
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Johannes
J
Kern
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Iris
I
Niehues
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Philipp
P
Tonndorf
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Robert
R
Schmidt
Institute of Solid State Theory, University of Münster, 48149, Münster, Germany.
Daniel
D
Wigger
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Robert
R
Schneider
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Torsten
T
Stiehm
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Steffen
S
Michaelis de Vasconcellos
Institute of Solid State Theory, University of Münster, 48149, Münster, Germany.
Doris E
DE
Reiter
Institute of Solid State Theory, University of Münster, 48149, Münster, Germany.
Tilmann
T
Kuhn
Institute of Physics and Center for Nanotechnology, University of Münster, 48149, Münster, Germany.
Rudolf
R
Bratschitsch
atomically thin semiconductors; nanogaps; single-photon emitters; strain engineering; super-localization microscopy