Thermoelectric materials by using two-dimensional materials with negative correlation between electrical and thermal conductivity.
In general, in thermoelectric materials the electrical conductivity σ and thermal conductivity κ are related and thus cannot be controlled independently. Previously, to maximize the thermoelectric figure of merit in state-of-the-art materials, differences in relative scaling between σ and κ as dimensions are reduced to approach the nanoscale were utilized. Here we present an approach to thermoelectric materials using tin disulfide, SnS2, nanosheets that demonstrated a negative correlation between σ and κ. In other words, as the thickness of SnS2 decreased, σ increased whereas κ decreased. This approach leads to a thermoelectric figure of merit increase to 0.13 at 300 K, a factor ∼1,000 times greater than previously reported bulk single-crystal SnS2. The Seebeck coefficient obtained for our two-dimensional SnS2 nanosheets was 34.7 mV K(-1) for 16-nm-thick samples at 300 K.
Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333, Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-Gun, Daegu 42988, Korea.|Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Myoung-Jae
0000-0003-2626-0460
MJ
Lee
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Department of Electronic Material Engineering, Korea Maritime and Ocean University, Busan 49112, Korea.
Ji-Hoon
JH
Ahn
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Ji Ho
JH
Sung
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Hoseok
H
Heo
Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea.|Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea.
Seong Gi
SG
Jeon
Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea.
Woo
W
Lee
Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Korea.
Jae Yong
JY
Song
Department of Materials Science and Engineering, Hanbat National University, Deajeon 34014, Korea.
Ki-Ha
0000-0001-7457-8196
KH
Hong
Division of Nano and Energy Convergence Research, Daegu Gyeongbuk Institute of Science and Technology (DGIST), 333, Techno Jungang Daero, Hyeonpung-Myeon, Dalseong-Gun, Daegu 42988, Korea.
Byeongdae
B
Choi
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Sung-Hoon
SH
Lee
Center for Artificial Low Dimensional Electronic Systems, Institute for Basic Science (IBS), Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Division of Advanced Materials Science, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.|Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784, Korea.
Moon-Ho
MH
Jo