Patterned Peeling 2D MoS2 off the Substrate.
The performance of two-dimensional (2D) MoS2 devices depends largely on the quality of the MoS2 itself. Existing fabrication process for 2D MoS2 relies on lithography and etching. However, it is extremely difficult to achieve clean patterns without any contaminations or passivations. Here we report a peel-off pattering of MoS2 films on substrates based on a proper interface engineering. The peel-off process utilizes the strong adhesion between gold and MoS2 and removes the MoS2 film contact with gold directly, leading to clean MoS2 pattern generation without residuals. Significantly improved electrical performances including high mobility ∼17.1 ± 8.3 cm(2)/(V s) and on/off ratio ∼5.6 ± 3.6 × 10(6) were achieved. Such clean fabrication technique paves a way to high quality MoS2 devices for various electrical and optical applications.
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
Jing
J
Zhao
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Hua
H
Yu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|College of Physics and Electronic Information, Gannan Normal University , Ganzhou, Jiangxi 341000, China.
Wei
W
Chen
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Rong
R
Yang
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Jianqi
J
Zhu
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Mengzhou
M
Liao
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
Dongxia
D
Shi
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
Guangyu
G
Zhang
MoS2; chemical vapor deposition; field effect transistors; interface engineering; peel-off