Ultra-Lightweight Resistive Switching Memory Devices Based on Silk Fibroin.
Ultra-lightweight resistive switching memory based on protein has been demonstrated. The memory foil is 0.4 mg cm(-2) , which is 320-fold lighter than silicon substrate, 20-fold lighter than office paper and can be sustained by a human hair. Additionally, high resistance OFF/ON ratio of 10(5) , retention time of 10(4) s, and excellent flexibility (bending radius of 800 μm) have been achieved.
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap SemiconductorTechnology, Xidian University, Xi'an, 710071, China.|School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Hong
H
Wang
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Bowen
B
Zhu
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Hua
H
Wang
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap SemiconductorTechnology, Xidian University, Xi'an, 710071, China.
Xiaohua
X
Ma
School of Advanced Materials and Nanotechnology, Key Laboratory of Wide Band Gap SemiconductorTechnology, Xidian University, Xi'an, 710071, China.
Yue
Y
Hao
School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
Xiaodong
X
Chen
D004581:Electronics / Q000379:methods*; D005349:Fibroins / Q000737:chemistry*; D047011:Silk / Q000737:chemistry*
D047011:Silk; D005349:Fibroins
flexible electronics; lightweight; memory; protein; resistive switching