Dispersion of Heat Flux Sensors Manufactured in Silicon Technology.
In this paper, we focus on the dispersion performances related to the manufacturing process of heat flux sensors realized in CMOS (Complementary metal oxide semi-conductor) compatible 3-in technology. In particular, we have studied the performance dispersion of our sensors and linked these to the physical characteristics of dispersion of the materials used. This information is mandatory to ensure low-cost manufacturing and especially to reduce production rejects during the fabrication process. The results obtained show that the measured sensitivity of the sensors is in the range 3.15 to 6.56 μV/(W/m²), associated with measured resistances ranging from 485 to 675 kΩ. The dispersions correspond to a Gaussian-type distribution with more than 90% determined around average sensitivity S e ¯ = 4.5 µV/(W/m²) and electrical resistance R ¯ = 573.5 kΩ within the interval between the average and, more or less, twice the relative standard deviation.
Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 and CNRS; Villeneuve d'Ascq, 59652, France. katir.ziouche@univ-lille1.fr.
Katir
K
Ziouche
Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 and CNRS; Villeneuve d'Ascq, 59652, France. pascale.lejeune@univ-lille1.fr.
Pascale
P
Lejeune
Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 and CNRS; Villeneuve d'Ascq, 59652, France. zahia.bougrioua@iemn.univ-lille1.fr.
Zahia
Z
Bougrioua
Institute of Electronics, Microelectronics and Nanotechnology, University Lille 1 and CNRS; Villeneuve d'Ascq, 59652, France. didier.leclercq@univ-lille1.fr.
Didier
D
Leclercq
CMOS; dispersion; heat flux; sensor; silicon; thermoelectric