In situ observations of Berkovich indentation induced phase transitions in crystalline silicon films.
The pressure induced phase transitions of crystalline Si films were studiedin situunder a Berkovich probe using a Raman spectroscopy-enhanced instrumented indentation technique. The observations suggested strain and time as important parameters in the nucleation and growth of high-pressure phases and, in contrast to earlier reports, indicate that pressure release is not a precondition for transformation to high pressure phases.
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA; School of Engineering & Applied Science, The George Washington University, Washington, DC 20052, USA.
Yvonne B
YB
Gerbig
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Chris A
CA
Michaels
Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, USA.
Robert F
RF
Cook
Nanoindentation; Phase transitions; Raman spectroscopy; Silicon