title: Crystal Structure Manipulation of the Exchange Bias in an Antiferromagnetic Film.
abstract: Exchange bias is one of the most extensively studied phenomena in magnetism, since it exerts a unidirectional anisotropy to a ferromagnet (FM) when coupled to an antiferromagnet (AFM) and the control of the exchange bias is therefore very important for technological applications, such as magnetic random access memory and giant magnetoresistance sensors. In this letter, we report the crystal structure manipulation of the exchange bias in epitaxial hcp Cr2O3 films. By epitaxially growing twined oriented Cr2O3 thin films, of which the c axis and spins of the Cr atoms lie in the film plane, we demonstrate that the exchange bias between Cr2O3 and an adjacent permalloy layer is tuned to in-plane from out-of-plane that has been observed in oriented Cr2O3 films. This is owing to the collinear exchange coupling between the spins of the Cr atoms and the adjacent FM layer. Such a highly anisotropic exchange bias phenomenon is not possible in polycrystalline films.
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Yuan
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Tang
authors.initials: T
authors.lastname: Su
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Song
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Wenyu
authors.initials: W
authors.lastname: Xing
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Chen
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Tianyu
authors.initials: T
authors.lastname: Wang
authors.affiliation: Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P.R. China.|Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072, P.R. China.
authors.forename: Zhangyuan
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P.R. China.
authors.forename: Xiumei
authors.initials: X
authors.lastname: Ma
authors.affiliation: Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.|Electron Microscopy Laboratory, School of Physics, Peking University, Beijing, 100871, P.R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Gao
authors.affiliation: Department of Physics and Astronomy, University of California, Riverside, California 92521, USA.
authors.forename: Jing
authors.initials: J
authors.lastname: Shi
authors.affiliation: International Center for Quantum Materials, Peking University, Beijing, 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing 100871, P.R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Han