title: 3D Stretchable Arch Ribbon Array Fabricated via Grayscale Lithography.
abstract: Microstructures with flexible and stretchable properties display tremendous potential applications including integrated systems, wearable devices and bio-sensor electronics. Hence, it is essential to develop an effective method for fabricating curvilinear and flexural microstructures. Despite significant advances in 2D stretchable inorganic structures, large scale fabrication of unique 3D microstructures at a low cost remains challenging. Here, we demonstrate that the 3D microstructures can be achieved by grayscale lithography to produce a curved photoresist (PR) template, where the PR acts as sacrificial layer to form wavelike arched structures. Using plasma-enhanced chemical vapor deposition (PECVD) process at low temperature, the curved PR topography can be transferred to the silicon dioxide layer. Subsequently, plasma etching can be used to fabricate the arched stripe arrays. The wavelike silicon dioxide arch microstructure exhibits Young modulus and fracture strength of 52 GPa and 300 MPa, respectively. The model of stress distribution inside the microstructure was also established, which compares well with the experimental results. This approach of fabricating a wavelike arch structure may become a promising route to produce a variety of stretchable sensors, actuators and circuits, thus providing unique opportunities for emerging classes of robust 3D integrated systems.
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Pang
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Shu
authors.affiliation: Department of Mechanical Engineering, Southern Illinois University, Edwardsville, IL 62026, USA.|Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720, USA.
authors.forename: Mohammad
authors.initials: M
authors.lastname: Shavezipur
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Xuefeng
authors.initials: X
authors.lastname: Wang
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Mohammad Ali
authors.initials: MA
authors.lastname: Mohammad
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Haiming
authors.initials: H
authors.lastname: Zhao
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Ningqin
authors.initials: N
authors.lastname: Deng
authors.affiliation: Department of Chemical and Biomolecular Engineering, University of California, Berkeley, CA 94720, USA.
authors.forename: Roya
authors.initials: R
authors.lastname: Maboudian
authors.affiliation: Institute of Microelectronics, Tsinghua University, 100084, Beijing, China.
authors.forename: Tian-Ling
authors.initials: TL
authors.lastname: Ren