title: High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors.
abstract: High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 10(7) A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65 μA) and response speed (40-60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Fan
authors.initials: F
authors.lastname: Huang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Feixiang
authors.initials: F
authors.lastname: Jia
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Caoyuan
authors.initials: C
authors.lastname: Cai
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Xu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Congjun
authors.initials: C
authors.lastname: Wu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Ma
authors.affiliation: Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, P. O. Box 1129, Hefei, 230031, People's Republic of China.
authors.forename: Guangtao
authors.initials: G
authors.lastname: Fei
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Tunxi Road 193, Hefei, 230009, People's Republic of China.
authors.forename: Min
authors.initials: M
authors.lastname: Wang