title: Ammonia reduced graphene oxides as a hole injection layer for CdSe/CdS/ZnS quantum dot light-emitting diodes.
abstract: In this study, we report quantum-dot light-emitting devices (QD-LEDs) using ammonia reduced graphene oxide (rGO) as a hole injection layer (HIL). Compared with pristine GO, QD-LEDs employing rGO as a HIL show higher maximum luminance (936 cd m(-2) versus 699 cd m(-2)) and lower turn-on voltage (V th, 5.0 V versus 7.5 V). The improved performance can be attributed to the synergistic effect of the improved conductivity (1.27 μS cm(-1) versus 0.139 μS cm(-1)) and decreased work function (5.27 eV versus 5.40 eV) of the GO after the reduction process. The above results indicate that ammonia functionalized graphene may be a promising hole injection material for QD-LEDs.
authors.affiliation: School of Physical Engineering, Zhengzhou University, Zhengzhou 450052, People's Republic of China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Lou
authors.forename: Wen-Yu
authors.initials: WY
authors.lastname: Ji
authors.forename: Jia-Long
authors.initials: JL
authors.lastname: Zhao
authors.forename: Chong-Xin
authors.initials: CX
authors.lastname: Shan