title: Low field magnetoresistance in a 2D topological insulator based on wide HgTe quantum well.
abstract: Low field magnetoresistance is experimentally studied in a two-dimensional topological insulator (TI) in both diffusive and quasiballistic samples fabricated on top of a wide (14 nm) HgTe quantum well. In all cases a pronounced quasi-linear positive magnetoresistance is observed similar to that found previously in diffusive samples based on a narrow (8 nm) HgTe well. The experimental results are compared with the main existing theoretical models based on different types of disorder: sample edge roughness, nonmagnetic disorder in an otherwise coherent TI and metallic puddles due to locally trapped charges that act like local gate on the sample. The quasiballistic samples with resistance close to the expected quantized values also show a positive low-field magnetoresistance but with a pronounced admixture of mesoscopic effects.
authors.affiliation: Institute of Semiconductor Physics, Novosibirsk 630090, Russia.
authors.forename: E B
authors.initials: EB
authors.lastname: Olshanetsky
authors.forename: Z D
authors.initials: ZD
authors.lastname: Kvon
authors.forename: G M
authors.initials: GM
authors.lastname: Gusev
authors.forename: N N
authors.initials: NN
authors.lastname: Mikhailov
authors.forename: S A
authors.initials: SA
authors.lastname: Dvoretsky