title: Rear-Sided Passivation by SiNx:H Dielectric Layer for Improved Si/PEDOT:PSS Hybrid Heterojunction Solar Cells.
abstract: Silicon/organic hybrid solar cells have recently attracted great attention because they combine the advantages of silicon (Si) and the organic cells. In this study, we added a patterned passivation layer of silicon nitride (SiNx:H) onto the rear surface of the Si substrate in a Si/poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (
  PSS) hybrid solar cell, enabling an improvement of 0.6 % in the power conversion efficiency (PCE). The addition of the SiNx:H layer boosted the open circuit voltage (V oc) from 0.523 to 0.557 V, suggesting the well-passivation property of the patterned SiNx:H thin layer that was created by plasma-enhanced chemical vapor deposition and lithography processes. The passivation properties that stemmed from front
  PSS, rear-SiNx:H, front
  PSS/rear-SiNx:H, etc. are thoroughly investigated, in consideration of the process-related variations.
authors.affiliation: School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China.|Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Yiling
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Pingqi
authors.initials: P
authors.lastname: Gao
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Jian
authors.initials: J
authors.lastname: He
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Suqiong
authors.initials: S
authors.lastname: Zhou
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Zhiqin
authors.initials: Z
authors.lastname: Ying
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China.
authors.forename: Xi
authors.initials: X
authors.lastname: Yang
authors.affiliation: School of Energy Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China. xiang@uestc.edu.cn.
authors.forename: Yong
authors.initials: Y
authors.lastname: Xiang
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, People's Republic of China. jichun.ye@nimte.ac.cn.
authors.forename: Jichun
authors.initials: J
authors.lastname: Ye
keywords: Hybrid solar cells; Photolithography; Si/PEDOT:PSS; SiNx:H passivation