title: Full-Color Single Nanowire Pixels for Projection Displays.
abstract: Multicolor single InGaN/GaN dot-in-nanowire light emitting diodes (LEDs) were fabricated on the same substrate using selective area epitaxy. It is observed that the structural and optical properties of InGaN/GaN quantum dots depend critically on nanowire diameters. Photoluminescence emission of single InGaN/GaN dot-in-nanowire structures exhibits a consistent blueshift with increasing nanowire diameter. This is explained by the significantly enhanced indium (In) incorporation for nanowires with small diameters, due to the more dominant contribution for In incorporation from the lateral diffusion of In adatoms. Single InGaN/GaN nanowire LEDs with emission wavelengths across nearly the entire visible spectral were demonstrated on a single chip by varying the nanowire diameters. Such nanowire LEDs also exhibit superior electrical performance, with a turn-on voltage ∼2 V and negligible leakage current under reverse bias. The monolithic integration of full-color LEDs on a single chip, coupled with the capacity to tune light emission characteristics at the single nanowire level, provides an unprecedented approach to realize ultrasmall and efficient projection display, smart lighting, and on-chip spectrometer.
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Yong-Ho
authors.initials: YH
authors.lastname: Ra
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Renjie
authors.initials: R
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.
authors.forename: Steffi Y
authors.initials: SY
authors.lastname: Woo
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Mehrdad
authors.initials: M
authors.lastname: Djavid
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Sharif Md
authors.initials: SM
authors.lastname: Sadaf
authors.affiliation: Nano Electronics Lab, Samsung Advanced Institute of Technology , Suwon-si, Gyeonggi-do 443-803, Korea.
authors.forename: Jaesoong
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Canadian Centre for Electron Microscopy, McMaster University , 1280 Main Street West, Hamilton, Ontario L8S 4M1, Canada.
authors.forename: Gianluigi A
authors.initials: GA
authors.lastname: Botton
authors.affiliation: Department of Electrical and Computer Engineering, McGill University , 3480 University Street, Montreal, Quebec H3A 0E9, Canada.
authors.forename: Zetian
authors.initials: Z
authors.lastname: Mi
keywords: InGaN; Nanowire; display; light-emitting diode; quantum dot; selective area growth