title: Piezo Voltage Controlled Planar Hall Effect Devices.
abstract: The electrical control of the magnetization switching in ferromagnets is highly desired for future spintronic applications. Here we report on hybrid piezoelectric (PZT)/ferromagnetic (Co2FeAl) devices in which the planar Hall voltage in the ferromagnetic layer is tuned solely by piezo voltages. The change of planar Hall voltage is associated with magnetization switching through 90° in the plane under piezo voltages. Room temperature magnetic NOT and NOR gates are demonstrated based on the piezo voltage controlled Co2FeAl planar Hall effect devices without the external magnetic field. Our demonstration may lead to the realization of both information storage and processing using ferromagnetic materials.
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Bao
authors.initials: B
authors.lastname: Zhang
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100048, China.
authors.forename: Kang-Kang
authors.initials: KK
authors.lastname: Meng
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Mei-Yin
authors.initials: MY
authors.lastname: Yang
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom.
authors.forename: K W
authors.initials: KW
authors.lastname: Edmonds
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhang
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Kai-Ming
authors.initials: KM
authors.lastname: Cai
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.|Department of Physics, School of Sciences, University of Science &Technology Beijing, Beijing 100048, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Sheng
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Nan
authors.initials: N
authors.lastname: Zhang
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Ji
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Jian-Hua
authors.initials: JH
authors.lastname: Zhao
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Hou-Zhi
authors.initials: HZ
authors.lastname: Zheng
authors.affiliation: SKLSM, Institute of Semiconductors, CAS, P. O. Box 912, Beijing 100083, People's Republic of China.
authors.forename: Kai-You
authors.initials: KY
authors.lastname: Wang