title: Flexible White Light Emitting Diodes Based on Nitride Nanowires and Nanophosphors.
abstract: We report the first demonstration of flexible white phosphor-converted light emitting diodes (LEDs) based on p-n junction core/shell nitride nanowires. GaN nanowires containing seven radial In0.2Ga0.8N/GaN quantum wells were grown by metal-organic chemical vapor deposition on a sapphire substrate by a catalyst-free approach. To fabricate the flexible LED, the nanowires are embedded into a phosphor-doped polymer matrix, peeled off from the growth substrate, and contacted using a flexible and transparent silver nanowire mesh. The electroluminescence of a flexible device presents a cool-white color with a spectral distribution covering a broad spectral range from 400 to 700 nm. Mechanical bending stress down to a curvature radius of 5 mm does not yield any degradation of the LED performance. The maximal measured external quantum efficiency of the white LED is 9.3%, and the wall plug efficiency is 2.4%.
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: Nan
authors.initials: N
authors.lastname: Guan
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: Xing
authors.initials: X
authors.lastname: Dai
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay, 91405 Orsay, France; Université Grenoble Alpes, 38000 Grenoble, France; "Nanophysique et Semiconducteurs" Group, CEA, INAC-SP2M, 17 Rue des Martyrs, 38000 Grenoble, France.
authors.forename: Agnès
authors.initials: A
authors.lastname: Messanvi
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: Hezhi
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay, 91405 Orsay, France; Institute of Semiconductors, Chinese Academy of Sciences, 100083 Beijing, China.
authors.forename: Jianchang
authors.initials: J
authors.lastname: Yan
authors.affiliation: Université Grenoble Alpes, 38000 Grenoble, France; CEA, INAC-SPINTEC, 17 Rue des Martyrs, 38000 Grenoble, France.
authors.forename: Eric
authors.initials: E
authors.lastname: Gautier
authors.affiliation: Université Grenoble Alpes, 38000 Grenoble, France; "Nanophysique et Semiconducteurs" Group, CNRS, Institut Néel, 25 Rue des Martyrs, 38000 Grenoble, France.
authors.forename: Catherine
authors.initials: C
authors.lastname: Bougerol
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: François H
authors.initials: FH
authors.lastname: Julien
authors.affiliation: Université Grenoble Alpes, 38000 Grenoble, France; "Nanophysique et Semiconducteurs" Group, CEA, INAC-SP2M, 17 Rue des Martyrs, 38000 Grenoble, France.
authors.forename: Christophe
authors.initials: C
authors.lastname: Durand
authors.affiliation: Université Grenoble Alpes, 38000 Grenoble, France; "Nanophysique et Semiconducteurs" Group, CEA, INAC-SP2M, 17 Rue des Martyrs, 38000 Grenoble, France.
authors.forename: Joël
authors.initials: J
authors.lastname: Eymery
authors.affiliation: Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: Maria
authors.initials: M
authors.lastname: Tchernycheva
keywords: flexible; nanowire; nitride; white LED