title: Nanoscale Transformations in Metastable, Amorphous, Silicon-Rich Silica.
abstract: Electrically biasing thin films of amorphous, substoichiometric silicon oxide drives surprisingly large structural changes, apparent as density variations, oxygen movement, and ultimately, emission of superoxide ions. Results from this fundamental study are directly relevant to materials that are increasingly used in a range of technologies, and demonstrate a surprising level of field-driven local reordering of a random oxide network.
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK. a.mehonic@ee.ucl.ac.uk.
authors.forename: Adnan
authors.initials: A
authors.lastname: Mehonic
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
authors.forename: Mark
authors.initials: M
authors.lastname: Buckwell
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
authors.forename: Luca
authors.initials: L
authors.lastname: Montesi
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.|Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138634.
authors.forename: Manveer Singh
authors.initials: MS
authors.lastname: Munde
authors.affiliation: Department of Physics and Astronomy and London Centre for Nanotechnology, UCL, Gower Street, London, WC1E 6BT, UK.
authors.forename: David
authors.initials: D
authors.lastname: Gao
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK.
authors.forename: Stephen
authors.initials: S
authors.lastname: Hudziak
authors.affiliation: Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
authors.forename: Richard J
authors.initials: RJ
authors.lastname: Chater
authors.affiliation: Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
authors.forename: Sarah
authors.initials: S
authors.lastname: Fearn
authors.affiliation: Department of Materials, Imperial College London, South Kensington Campus, London, SW7 2AZ, UK.
authors.forename: David
authors.initials: D
authors.lastname: McPhail
authors.affiliation: Institute of Materials Research and Engineering, 2 Fusionopolis Way, Singapore, 138634.
authors.forename: Michel
authors.initials: M
authors.lastname: Bosman
authors.affiliation: Department of Physics and Astronomy and London Centre for Nanotechnology, UCL, Gower Street, London, WC1E 6BT, UK.
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Shluger
authors.affiliation: Department of Electronic and Electrical Engineering, UCL, Torrington Place, London, WC1E 7JE, UK. t.kenyon@ee.ucl.ac.uk.
authors.forename: Anthony J
authors.initials: AJ
authors.lastname: Kenyon
keywords: amorphous oxides; electrical stress; oxide nanostructure; resistive switching