title: Grouped and Multistep Nanoheteroepitaxy: Toward High-Quality GaN on Quasi-Periodic Nano-Mask.
abstract: A novel nanoheteroepitaxy method, namely, the grouped and multistep nanoheteroepitaxy (GM-NHE), is proposed to attain a high-quality gallium nitride (GaN) epilayer by metal-organic vapor phase epitaxy. This method combines the effects of sub-100 nm nucleation and multistep lateral growth by using a low-cost but unique carbon nanotube mask, which consists of nanoscale growth windows with a quasi-periodic 2D fill factor. It is found that GM-NHE can facilely reduce threading dislocation density (TDD) and modulate residual stress on foreign substrate without any regrowth. As a result, high-quality GaN epilayer is produced with homogeneously low TDD of 4.51 × 10(7) cm(-2) and 2D-modulated stress, and the performance of the subsequent 410 nm near-ultraviolet light-emitting diode is greatly boosted. In this way, with the facile fabrication of nanomask and the one-off epitaxy procedure, GaN epilayer is prominently improved with the assistance of nanotechnology, which demonstrates great application potential for high-efficiency TDD-sensitive optoelectronic and electronic devices.
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Feng
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Tongjun
authors.initials: T
authors.lastname: Yu
authors.affiliation: Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Wei
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Cheng
authors.initials: C
authors.lastname: Ji
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Yutian
authors.initials: Y
authors.lastname: Cheng
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Hua
authors.initials: H
authors.lastname: Zong
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Kun
authors.initials: K
authors.lastname: Wang
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Zhijian
authors.initials: Z
authors.lastname: Yang
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Xiangning
authors.initials: X
authors.lastname: Kang
authors.affiliation: State Key Laboratory for Artificial Microstructures and Mesoscopic Physics, School of Physics, Peking University , Beijing 100871, P. R. China.
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University , Beijing 100084, P. R. China.
authors.forename: Shoushan
authors.initials: S
authors.lastname: Fan
keywords: GaN; carbon nanotubes; nanoheteroepitaxy; near-UV LED; quasi-periodic nanomask