title: Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors.
abstract: Semiconductors with a moderate bandgap have enabled modern electronic device technology, and the current scaling trends down to nanometer scale have introduced two-dimensional (2D) semiconductors. The bandgap of a semiconductor has been an intrinsic property independent of the environments and determined fundamental semiconductor device characteristics. In contrast to bulk semiconductors, we demonstrate that an atomically thin two-dimensional semiconductor has a bandgap with strong dependence on dielectric environments. Specifically, monolayer MoS2 bandgap is shown to change from 2.8 eV to 1.9 eV by dielectric environment. Utilizing the bandgap modulation property, a tunable bandgap transistor, which can be in general made of a two-dimensional semiconductor, is proposed.
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.
authors.forename: Junga
authors.initials: J
authors.lastname: Ryou
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon 305-340, Korea.|Department of Nano Science, University of Science and Technology, Daejeon 305-350, Korea.
authors.forename: Yong-Sung
authors.initials: YS
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
authors.forename: Santosh
authors.initials: S
authors.lastname: Kc
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
authors.forename: Kyeongjae
authors.initials: K
authors.lastname: Cho