title: Polarity control in WSe2 double-gate transistors.
abstract: As scaling of conventional silicon-based electronics is reaching its ultimate limit, considerable effort has been devoted to find new materials and new device concepts that could ultimately outperform standard silicon transistors. In this perspective two-dimensional transition metal dichalcogenides, such as MoS2 and WSe2, have recently attracted considerable interest thanks to their electrical properties. Here, we report the first experimental demonstration of a doping-free, polarity-controllable device fabricated on few-layer WSe2. We show how modulation of the Schottky barriers at drain and source by a separate gate, named program gate, can enable the selection of the carriers injected in the channel, and achieved controllable polarity behaviour with ON/OFF current ratios >10(6) for both electrons and holes conduction. Polarity-controlled WSe2 transistors enable the design of compact logic gates, leading to higher computational densities in 2D-flatronics.
authors.affiliation: Integrated System Laboratory (LSI), School of Computer and Communication Science, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
authors.forename: Giovanni V
authors.initials: GV
authors.lastname: Resta
authors.affiliation: Department of Physics and Astronomy, KU Leuven, Celestijnenlaan 200D, B-3001, Leuven, Belgium.|IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Surajit
authors.initials: S
authors.lastname: Sutar
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Yashwanth
authors.initials: Y
authors.lastname: Balaji
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Dennis
authors.initials: D
authors.lastname: Lin
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Praveen
authors.initials: P
authors.lastname: Raghavan
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Iuliana
authors.initials: I
authors.lastname: Radu
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Francky
authors.initials: F
authors.lastname: Catthoor
authors.affiliation: IMEC, Kapeldreef 75, B-3001 Leuven, Belgium.
authors.forename: Aaron
authors.initials: A
authors.lastname: Thean
authors.affiliation: Integrated System Laboratory (LSI), School of Computer and Communication Science, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.|Laboratory of NanoIntegrated Systems (LNIS), Department of Electrical and Computer Engineering, University of Utah, Salt-Lake City, Utah 84112, USA.
authors.forename: Pierre-Emmanuel
authors.initials: PE
authors.lastname: Gaillardon
authors.affiliation: Integrated System Laboratory (LSI), School of Computer and Communication Science, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
authors.forename: Giovanni
authors.initials: G
authors.lastname: de Micheli