title: High-Output-Power Ultraviolet Light Source from Quasi-2D GaN Quantum Structure.
abstract: Quasi-2D GaN layers inserted in an AlGaN matrix are proposed as a novel active region to develop a high-output-power UV light source. Such a structure is successfully achieved by precise control in molecular beam epitaxy and shows an amazing output power of ≈160 mW at 285 nm with a pulsed electron-beam excitation. This device is promising and competitive in non-line-of-sight communications or the sterilization field.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Xin
authors.initials: X
authors.lastname: Rong
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China. wangshi@pku.edu.cn.|Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China. wangshi@pku.edu.cn.
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.affiliation: Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia.
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Ivanov
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Xinhe
authors.initials: X
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Guang
authors.initials: G
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Ping
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Weiying
authors.initials: W
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Chenguang
authors.initials: C
authors.lastname: He
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.affiliation: Leibniz Institute for Crystal Growth, Berlin, 12489, Germany.
authors.forename: Tobias
authors.initials: T
authors.lastname: Schulz
authors.affiliation: Leibniz Institute for Crystal Growth, Berlin, 12489, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Albrecht
authors.affiliation: Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia.
authors.forename: Valentin N
authors.initials: VN
authors.lastname: Jmerik
authors.affiliation: Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia.
authors.forename: Alexey A
authors.initials: AA
authors.lastname: Toropov
authors.affiliation: Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg, 194021, Russia.
authors.forename: Viacheslav V
authors.initials: VV
authors.lastname: Ratnikov
authors.affiliation: Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow, 119991, Russia.|National Research Nuclear University MEPhI, Kashirskoye shosse 31, Moscow, 115409, Russia.
authors.forename: Vladimir I
authors.initials: VI
authors.lastname: Kozlovsky
authors.affiliation: Lebedev Physical Institute, Russian Academy of Sciences, Leninsky pr. 53, Moscow, 119991, Russia.
authors.forename: Victor P
authors.initials: VP
authors.lastname: Martovitsky
authors.affiliation: Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, CAS, Beijing, 100083, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Jin
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Fujun
authors.initials: F
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Xuelin
authors.initials: X
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Weikun
authors.initials: W
authors.lastname: Ge
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Shi
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, P. R. China. bshen@pku.edu.cn.|Collaborative Innovation Center of Quantum Matter, Beijing, 100871, P. R. China. bshen@pku.edu.cn.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
keywords: e-beam pumping; high output power; mid-UV light sources; molecular beam epitaxy; quasi-2D GaN