title: Double-layer-gate architecture for few-hole GaAs quantum dots.
abstract: We report the fabrication of single and double hole quantum dots using a double-layer-gate design on an undoped accumulation mode [Formula: see text]/GaAs heterostructure. Electrical transport measurements of a single quantum dot show varying addition energies and clear excited states. In addition, the two-level-gate architecture can also be configured into a double quantum dot with tunable inter-dot coupling.
authors.affiliation: School of Physics, University of New South Wales, Sydney NSW 2052, Australia.
authors.forename: D Q
authors.initials: DQ
authors.lastname: Wang
authors.forename: A R
authors.initials: AR
authors.lastname: Hamilton
authors.forename: I
authors.initials: I
authors.lastname: Farrer
authors.forename: D A
authors.initials: DA
authors.lastname: Ritchie
authors.forename: O
authors.initials: O
authors.lastname: Klochan