title: High-Quality Crystal Growth and Characteristics of AlGaN-Based Solar-Blind Distributed Bragg Reflectors with a Tri-layer Period Structure.
abstract: To realize AlGaN-based solar-blind ultraviolet distributed Bragg reflectors (DBRs), a novel tri-layer AlGaN/AlInN/AlInGaN periodical structure that differs from the traditional periodically alternating layers of high- and low-refractive-index materials was proposed and grown on an Al0.5Ga0.5N template via metal-organic chemical vapour deposition. Because of the intentional design of the AlInGaN strain transition layer, a state-of-the-art DBR structure with atomic-level-flatness interfaces was achieved using an AlGaN template. The fabricated DBR exhibits a peak reflectivity of 86% at the centre wavelength of 274 nm and a stopband with a full-width at half-maximum of 16 nm.
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Chang
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Dunjun
authors.initials: D
authors.lastname: Chen
authors.affiliation: Department of Physics, Changji College, Changji, 831100, P. R. China.
authors.forename: Lianhong
authors.initials: L
authors.lastname: Yang
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Yanli
authors.initials: Y
authors.lastname: Liu
authors.affiliation: School of Mechanical and Electronic Engineering, Chuzhou University, Chuzhou, 239000, P. R. China.
authors.forename: Kexiu
authors.initials: K
authors.lastname: Dong
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Hai
authors.initials: H
authors.lastname: Lu
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Rong
authors.initials: R
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Advanced Photonic and Electronic Materials, School of electronic Science and Engineering, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Youdou
authors.initials: Y
authors.lastname: Zheng