title: High Mobility MoS2Transistor with Low Schottky Barrier Contact by Using Atomic Thick h-BN as a Tunneling Layer.
abstract: High-performance MoS2transistors are developed using atomic hexagonal boron nitride as a tunneling layer to reduce the Schottky barrier and achieve low contact resistance between metal and MoS2. Benefiting from the ultrathin tunneling layer within 0.6 nm, the Schottky barrier is significantly reduced from 158 to 31 meV with small tunneling resistance.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.affiliation: Department of Physics and Lab Nanoscale Condense Matter Physics, Xiamen University, Xiamen, 361005, China.
authors.forename: Qian
authors.initials: Q
authors.lastname: Yao
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China. liaolei@whu.edu.cn.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Department of Physics and Lab Nanoscale Condense Matter Physics, Xiamen University, Xiamen, 361005, China.
authors.forename: Shanshan
authors.initials: S
authors.lastname: Chen
authors.affiliation: Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Fan
authors.affiliation: Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou, 215000, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Zhang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Wu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan, 430072, China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University, Hsin-chu, 30010, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
keywords: MoS2; contact resistance; hexagonal boron nitride; tunneling