title: Diffraction Line Broadening Analysis if Broadening Is Caused by Both Dislocations and Limited Crystallite Size.
abstract: The determination of dislocation distribution parameters is discussed for specimens where both strain broadening caused by dislocations and size broadening occur. If the strain broadening is well described by a model due to Wilkens, several methods are possible for the analysis of the broadening of diffraction lines. In sputter deposited nickel layers, three different methods for diffraction line broadening analysis yield identical results. The recrystallization of the nickel layers was investigated by annealing the layers at various temperatures in the range 300 K to 500 K. With increasing annealing temperature, the microstructure of the layers changed from a microstructure with small grains and high dislocation density, via a microstructure that is a mixture of small grains with high dislocation density and large grains with low dislocation density, to a microstructure with large grains and low dislocation density.
authors.affiliation: Netherlands Institute for Metals Research, Rotterdamseweg 137, NL-2628 AL Delft, The Netherlands.
authors.forename: J-D
authors.initials: JD
authors.lastname: Kamminga
authors.affiliation: Bruker Nonius BV, Oostsingel 209, NL-2612 HL Delft, The Netherlands.
authors.forename: L J
authors.initials: LJ
authors.lastname: Seijbel
keywords: crystallite size; diffraction line broadening; dislocations; nickel; recrystallization; x-ray diffraction