title: Indium-Free Fully Transparent Electronics Deposited Entirely by Atomic Layer Deposition.
abstract: Indium-free, fully transparent thin-film transistors are fabricated entirely by the atomic layer deposition technique on rigid and flexible substrates at a low temperature of 160 °C. The transistors show high saturation mobility, large switching ratio, and small subthreshold swing value. The inverters and ring oscillators show large gain value and small propagation delay time, indicating the potential of this process in transparent electronic devices.
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Pradipta K
authors.initials: PK
authors.lastname: Nayak
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors.forename: Zhenwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. husam.alshareef@kaust.edu.sa.
authors.forename: Husam N
authors.initials: HN
authors.lastname: Alshareef
keywords: atomic layer deposition; fully transparent; thin-film transistors; zinc oxide