title: Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy.
abstract: We report the carrier dynamics in GaAsSb ternary alloy grown by molecular beam epitaxy through comprehensive spectroscopic characterization over a wide temperature range. A detailed analysis of the experimental data reveals a complex carrier relaxation process involving both localized and delocalized states. At low temperature, the localized degree shows linear relationship with the increase of Sb component. The existence of localized states is also confirmed by the temperature dependence of peak position and band width of the emission. At temperature higher than 60 K, emissions related to localized states are quenched while the band to band transition dominates the whole spectrum. This study indicates that the localized states are related to the Sb component in the GaAsSb alloy, while it leads to the poor crystal quality of the material, and the application of GaAsSb alloy would be limited by this deterioration.
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Xian
authors.initials: X
authors.lastname: Gao
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Zhipeng
authors.initials: Z
authors.lastname: Wei
authors.affiliation: Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China.
authors.forename: Fenghuan
authors.initials: F
authors.lastname: Zhao
authors.affiliation: Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China.
authors.forename: Yahui
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Department of Electrical and Electronic Engineering, Southern University of Science and Technology of China, Shenzhen, Guangdong 518055, China.
authors.forename: Rui
authors.initials: R
authors.lastname: Chen
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Xuan
authors.initials: X
authors.lastname: Fang
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Jilong
authors.initials: J
authors.lastname: Tang
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Fang
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Dengkui
authors.initials: D
authors.lastname: Wang
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Ruixue
authors.initials: R
authors.lastname: Li
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Xiaotian
authors.initials: X
authors.lastname: Ge
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Ma
authors.affiliation: State Key Laboratory of High Power Semiconductor Laser, School of Science, Changchun University of Science and Technology, 7089 Wei-Xing Road, Changchun 130022, China.
authors.forename: Xiaohua
authors.initials: X
authors.lastname: Wang
mesh_terms: D000497:Alloys / Q000737:chemistry*; D008422:Materials Testing / Q000379:methods*; D013057:Spectrum Analysis; D013696:Temperature
chemical_list: D000497:Alloys