title: Fabrication of InGaN thin-film transistors using pulsed sputtering deposition.
abstract: We report the first demonstration of operational InGaN-based thin-film transistors (TFTs) on glass substrates. The key to our success was coating the glass substrate with a thin amorphous layer of HfO2, which enabled a highly c-axis-oriented growth of InGaN films using pulsed sputtering deposition. The electrical characteristics of the thin films were controlled easily by varying their In content. The optimized InGaN-TFTs exhibited a high on/off ratio of ~10(8), a field-effect mobility of ~22 cm(2) V(-1) s(-1), and a maximum current density of ~30 mA/mm. These results lay the foundation for developing high-performance electronic devices on glass substrates using group III nitride semiconductors.
authors.affiliation: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors.forename: Takeki
authors.initials: T
authors.lastname: Itoh
authors.affiliation: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors.forename: Atsushi
authors.initials: A
authors.lastname: Kobayashi
authors.affiliation: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.
authors.forename: Kohei
authors.initials: K
authors.lastname: Ueno
authors.affiliation: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.|PRESTO, Japan Science and Technology Agency, Saitama 332-0012, Japan.
authors.forename: Jitsuo
authors.initials: J
authors.lastname: Ohta
authors.affiliation: Institute of Industrial Science, The University of Tokyo, Tokyo 153-8505, Japan.|ACCEL, Japan Science and Technology Agency, Tokyo 102-0075, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Fujioka