title: Point contact resistive switching memory based on self-formed interface of Al/ITO.
abstract: Point contact resistive switching random access memory (RRAM) has been achieved by directly sputtering Al electrodes on indium tin oxide (ITO) conductive glasses. The room-temperature deposited Al/ITO shows an asymmetrical bipolar resistive switching (BRS) behavior after a process of initialization which induces a stable high resistive state (HRS). It might be caused by the in-situ formation of an ultra-thin layer (≈4 nm) at the interface. By comparison, the Al/ITO device after vacuum annealed exhibits typical symmetrical BRS without an initiation or electroforming process. This can be ascribed to the ex-situ thickening of the interfacial layer (≈9.2 nm) to achieve the stable HRS after heat treatment. This work suggests that the self-formed interface of active Al electrode/ITO would provide the simplest geometry to construct RRAM.
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China.
authors.forename: Qiuhong
authors.initials: Q
authors.lastname: Li
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China.
authors.forename: Linjun
authors.initials: L
authors.lastname: Qiu
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China.
authors.forename: Xianhua
authors.initials: X
authors.lastname: Wei
authors.affiliation: State Key Laboratory Cultivation Base for Nonmetal Composites and Functional Materials, Southwest University of Science and Technology, Mianyang 621010, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Dai
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Huizhong
authors.initials: H
authors.lastname: Zeng