title: A novel p-type and metallic dual-functional Cu-Al2O3 ultra-thin layer as the back electrode enabling high performance of thin film solar cells.
abstract: Increasing the open-circuit voltage (Voc) along with the fill factor (FF) is pivotal for the performance improvement of solar cells. In this work, we report the design and construction of a new structure of CdS/CdTe/Al2O3/Cu using the atomic layer deposition (ALD) method, and then we control Cu diffusion through the Al2O3 atomic layer into the CdTe layer. Surprisingly, this generates a novel p-type and metallic dual-functional Cu-Al2O3 atomic layer. Due to this dual-functional character of the Cu-Al2O3 layer, an efficiency improvement of 2% in comparison with the standard cell was observed. This novel dual-functional back contact structure could also be introduced into other thin film solar cells for their efficiency improvement.
authors.affiliation: School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen 518055, China. panfeng@pkusz.edu.cn liangjun@pkusz.edu.cn.
authors.forename: Qinxian
authors.initials: Q
authors.lastname: Lin
authors.forename: Yantao
authors.initials: Y
authors.lastname: Su
authors.forename: Ming-Jian
authors.initials: MJ
authors.lastname: Zhang
authors.forename: Xiaoyang
authors.initials: X
authors.lastname: Yang
authors.forename: Sheng
authors.initials: S
authors.lastname: Yuan
authors.forename: Jiangtao
authors.initials: J
authors.lastname: Hu
authors.forename: Yuan
authors.initials: Y
authors.lastname: Lin
authors.forename: Jun
authors.initials: J
authors.lastname: Liang
authors.forename: Feng
authors.initials: F
authors.lastname: Pan