title: High-Hall-Mobility Al-Doped ZnO Films Having Textured Polycrystalline Structure with a Well-Defined (0001) Orientation.
abstract: Five hundred-nanometer-thick ZnO-based textured polycrystalline films consisting of 490-nm-thick Al-doped ZnO (AZO) films deposited on 10-nm-thick Ga-doped ZnO (GZO) films exhibited a high Hall mobility (μ H) of 50.1 cm(2)/Vs with a carrier concentration (N) of 2.55 × 10(20) cm(-3). Firstly, the GZO films were prepared on glass substrates by ion plating with dc arc discharge, and the AZO films were then deposited on the GZO films by direct current magnetron sputtering (DC-MS). The GZO interface layers with a preferential c-axis orientation play a critical role in producing AZO films with texture development of a well-defined (0001) orientation, whereas 500-nm-thick AZO films deposited by only DC-MS showed a mixture of the c-plane and the other plane orientation, to exhibit a μ H of 38.7 cm(2)/Vs with an N of 2.22 × 10(20) cm(-3).
authors.affiliation: Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi, 782-8502, Japan. nomoto.junichi@kochi-tech.ac.jp.
authors.forename: Junichi
authors.initials: J
authors.lastname: Nomoto
authors.affiliation: Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi, 782-8502, Japan.
authors.forename: Hisao
authors.initials: H
authors.lastname: Makino
authors.affiliation: Research Institute, Kochi University of Technology, 185 Miyanokuchi, Tosayamada-cho, Kami-shi, Kochi, 782-8502, Japan.
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Yamamoto
keywords: Al-doped ZnO; Carrier transport; Ga-doped ZnO; Ion plating; Magnetron sputtering; Transparent conducting oxide; X-ray diffraction