title: The Enhanced Light Absorptance and Device Application of Nanostructured Black Silicon Fabricated by Metal-assisted Chemical Etching.
abstract: We use metal-assisted chemical etching (MCE) method to fabricate nanostructured black silicon on the surface of C-Si. The Si-PIN photoelectronic detector based on this type of black silicon shows excellent device performance with a responsivity of 0.57 A/W at 1060 nm. Silicon nanocone arrays can be created using MCE treatment. These modified surfaces show higher light absorptance in the near-infrared range (800 to 2500 nm) compared to that of C-Si with polished surfaces, and the variations in the absorption spectra of the nanostructured black silicon with different etching processes are obtained. The maximum light absorptance increases significantly up to 95 % in the wavelength range of 400 to 2500 nm. Our recent novel results clearly indicate that nanostructured black silicon made by MCE has potential application in near-infrared photoelectronic detectors.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhong
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Anran
authors.initials: A
authors.lastname: Guo
authors.affiliation: School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Guohui
authors.initials: G
authors.lastname: Guo
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China. wli@uestc.edu.cn.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Yadong
authors.initials: Y
authors.lastname: Jiang
keywords: Absorptance; Black silicon; Device responsivity; MCE; Photoelectronic detector