title: Hetero-core III-V/Si microlaser.
abstract: We design and demonstrate optically pumped microlasers with a hetero-core cavity formed by III-V and silicon-on-insulator (SOI) materials. Hetero-core cavities with identical lateral dimension are fabricated. The cavity is formed by III-V layer with thickness of 210 nm on top of SOI layer with thickness of 300 nm via SiO2interlayer wafer bonding. Continuous wave laser operation is achieved for a diameter down to 2 μm with a corresponding mode volume of 0.07λ3and quality factor of 1.3×104. The architecture renders an alternative laser structure for heterogeneous laser-on-chip, with no dedicated vertical coupling mechanism needed between the two materials' layers.
authors.forename: Chee-Wei
authors.initials: CW
authors.lastname: Lee
authors.forename: Doris Keh-Ting
authors.initials: DK
authors.lastname: Ng
authors.forename: Ai Ling
authors.initials: AL
authors.lastname: Tan
authors.forename: Qian
authors.initials: Q
authors.lastname: Wang