title: Non-Negligible Diffusio-Osmosis Inside an Ion Concentration Polarization Layer.
abstract: The first experimental and theoretical evidence was provided for the non-negligible role of a diffusio-osmosis in the ion concentration polarization (ICP) layer, which had been reported to be in a high Peclet number regime. Under the assumption that the hydrated shells of cations were stripped out with the amplified electric field inside the ICP layer, its concentration profile possessed a steep concentration gradient at the stripped location. Since the concentration gradient drove a strong diffusio-osmosis, the combination of electro-osmotic and diffusio-osmotic slip velocity had a form of an anomalous nonmonotonic function with both a single- and multiple-cationic solution. A direct measurement of electrolytic concentrations around the layer quantitatively validated our new investigations. This non-negligible diffusio-osmotic contribution in a micro- and nanofluidic platform or porous medium would be essential for clarifying the fundamental insight of nanoscale electrokinetics as well as guiding the engineering of ICP-based electrochemical systems.
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
authors.forename: Inhee
authors.initials: I
authors.lastname: Cho
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
authors.forename: Wonseok
authors.initials: W
authors.lastname: Kim
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.
authors.forename: Junsuk
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Mechanical and Aerospace Engineering, Seoul National University, Seoul 08826, South Korea.|Institute of Advanced Machines and Design, Seoul National University, Seoul 08826, South Korea.|Big Data Institute, Seoul National University, Seoul 08826, South Korea.
authors.forename: Ho-Young
authors.initials: HY
authors.lastname: Kim
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.|Institute of Advanced Machines and Design, Seoul National University, Seoul 08826, South Korea.
authors.forename: Hyomin
authors.initials: H
authors.lastname: Lee
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, South Korea.|Big Data Institute, Seoul National University, Seoul 08826, South Korea.|Interuniversity Semiconductor Research Center, Seoul National University, Seoul 08826, South Korea.
authors.forename: Sung Jae
authors.initials: SJ
authors.lastname: Kim