title: X-ray detection with zinc-blende (cubic) GaN Schottky diodes.
abstract: The room temperature X-ray responses as functions of time of two n type cubic GaN Schottky diodes (200 μm and 400 μm diameters) are reported. The current densities as functions of time for both diodes showed fast turn-on transients and increases in current density when illuminated with X-ray photons of energy up to 35 keV. The diodes were also electrically characterized: capacitance, implied depletion width and dark current measurements as functions of applied bias at room temperature are presented. At -5 V reverse bias, the capacitances of the diodes were measured to be (84.05 ± 0.01) pF and (121.67 ± 0.02) pF, respectively. At -5 V reverse bias, the dark current densities of the diodes were measured to be (347.2 ± 0.4) mA cm(-2) and (189.0 ± 0.2) mA cm(-2), respectively. The Schottky barrier heights of the devices (0.52 ± 0.07) eV and (0.63 ± 0.09) eV, respectively, were extracted from the forward dark current characteristics.
authors.affiliation: Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT, UK.
authors.forename: T
authors.initials: T
authors.lastname: Gohil
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: J
authors.initials: J
authors.lastname: Whale
authors.affiliation: Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT, UK.
authors.forename: G
authors.initials: G
authors.lastname: Lioliou
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: S V
authors.initials: SV
authors.lastname: Novikov
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: C T
authors.initials: CT
authors.lastname: Foxon
authors.affiliation: School of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD, UK.
authors.forename: A J
authors.initials: AJ
authors.lastname: Kent
authors.affiliation: Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT, UK.
authors.forename: A M
authors.initials: AM
authors.lastname: Barnett