title: Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers.
abstract: Low threshold continuous-wave (CW) lasing of current injected InGaN quantum dot (QD) vertical-cavity surface-emitting lasers (VCSELs) was achieved at room temperature. The VCSEL was fabricated by metal bonding technique on a copper substrate to improve the heat dissipation ability of the device. For the first time, lasing was obtained at yellow-green wavelength of 560.4 nm with a low threshold of 0.61 mA, corresponding to a current density of 0.78 kA/cm2. A high degree of polarization of 94% were measured. Despite the operation in the range of "green gap" of GaN-based devices, single longitudinal mode laser emission was clearly achieved due to the high quality of active region based on InGaN QDs and the excellent thermal design of the VCSELs.
authors.forename: Guoen
authors.initials: G
authors.lastname: Weng
authors.forename: Yang
authors.initials: Y
authors.lastname: Mei
authors.forename: Jianping
authors.initials: J
authors.lastname: Liu
authors.forename: Werner
authors.initials: W
authors.lastname: Hofmann
authors.forename: Leiying
authors.initials: L
authors.lastname: Ying
authors.forename: Jiangyong
authors.initials: J
authors.lastname: Zhang
authors.forename: Yikun
authors.initials: Y
authors.lastname: Bu
authors.forename: Zengcheng
authors.initials: Z
authors.lastname: Li
authors.forename: Hui
authors.initials: H
authors.lastname: Yang
authors.forename: Baoping
authors.initials: B
authors.lastname: Zhang