title: Quantitative temperature measurement of multi-layered semiconductor devices using spectroscopic thermoreflectance microscopy.
abstract: Thermoreflectance microscopy is essential in understanding the unpredictable local heating generation that occurs during microelectronic device operation. However, temperature measurements of multi-layered semiconductor devices represent a challenge because the thermoreflectance coefficient is quite small and is dramatically changed by the optical interference inside transparent layers of the device. Therefore, we propose a spectroscopic thermoreflectance microscopy system using a systematic approach for improving the quantitative temperature measurement of multi-layered semiconductor devices. We demonstrate the quantitative measurement of the temperature profile for physical defects on thin-film polycrystalline silicon resistors via thermoreflectance coefficient calibration and effective coefficient κ estimation.
authors.forename: Dong Uk
authors.initials: DU
authors.lastname: Kim
authors.forename: Kwan Seob
authors.initials: KS
authors.lastname: Park
authors.forename: Chan Bae
authors.initials: CB
authors.lastname: Jeong
authors.forename: Geon Hee
authors.initials: GH
authors.lastname: Kim
authors.forename: Ki Soo
authors.initials: KS
authors.lastname: Chang