title: Enhanced magneto-optical effects in composite coaxial nanowires embedded with Ag nanoparticles.
abstract: Nanostructures decorated with noble metal nanoparticles (NPs) exhibit potential for use in highly sensitive optoelectronic devices through the localized surface plasmon resonance (LSPR) effect. In this study, Faraday rotation was significantly enhanced through the structural optimization of ferromagnetic (FM)/semiconductor composite nanostructures. Experimental and theoretical results revealed that the position of noble metal NPs significantly influenced the coupling of the LSPR-enhanced electromagnetic field with FM materials. Furthermore, nanostructures embedded with noble metals demonstrated an improved capability to efficiently use the electromagnetic field compared to other structures. The Faraday rotation of ZnO/Ag(NPs)/Fe was enhanced 58 fold compared to that of the ZnO(film)/Fe. This work provides a basis for the design of nanoarchitectures for miniaturized high-performance magneto-optical devices.
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Qianwen
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Xuanli
authors.initials: X
authors.lastname: Zheng
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Jialun
authors.initials: J
authors.lastname: He
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Weiping
authors.initials: W
authors.lastname: Wang
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Mingming
authors.initials: M
authors.lastname: Fu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Yiyan
authors.initials: Y
authors.lastname: Cao
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Heng
authors.initials: H
authors.lastname: Li
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Yaping
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Ting
authors.initials: T
authors.lastname: Chen
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Chunmiao
authors.initials: C
authors.lastname: Zhang
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Xiaohong
authors.initials: X
authors.lastname: Chen
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Binbin
authors.initials: B
authors.lastname: Yu
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Shuping
authors.initials: S
authors.lastname: Li
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.
authors.forename: Junyong
authors.initials: J
authors.lastname: Kang
authors.affiliation: Fujian Provincial Key Laboratory of Semiconductors and Applications, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, P. R. China.|Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee, 37831, USA.
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wu