title: Wafer-Size and Single-Crystal MoSe2 Atomically Thin Films Grown on GaN Substrate for Light Emission and Harvesting.
abstract: Two-dimensional (2D) atomic-layered semiconductors are important for next-generation electronics and optoelectronics. Here, we designed the growth of an MoSe2 atomic layer on a lattice-matched GaN semiconductor substrate. The results demonstrated that the MoSe2 films were less than three atomic layers thick and were single crystalline of MoSe2 over the entire GaN substrate. The ultrathin MoSe2/GaN heterojunction diode demonstrated ∼850 nm light emission and could also be used in photovoltaic applications.
authors.affiliation: State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Zuxin
authors.initials: Z
authors.lastname: Chen
authors.affiliation: State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Huiqiang
authors.initials: H
authors.lastname: Liu
authors.affiliation: State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Xuechen
authors.initials: X
authors.lastname: Chen
authors.affiliation: School of Metallurgy and Environment, Central South University , Changsha 410083, China.
authors.forename: Guang
authors.initials: G
authors.lastname: Chu
authors.affiliation: State Key Laboratory for Optoelectronics Materials and Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Sheng
authors.initials: S
authors.lastname: Chu
authors.affiliation: Division of Engineering and Applied Science, California Institute of Technology , Pasadena, California 91125, United States.
authors.forename: Hang
authors.initials: H
authors.lastname: Zhang
keywords: GaN; MoSe2; epitaxy; heterojunction diode; transition metal dichalcogenides