title: A noise model for the evaluation of defect states in solar cells.
abstract: A theoretical model, combining trapping/detrapping and recombination mechanisms, is formulated to explain the origin of random current fluctuations in silicon-based solar cells. In this framework, the comparison between dark and photo-induced noise allows the determination of important electronic parameters of the defect states. A detailed analysis of the electric noise, at different temperatures and for different illumination levels, is reported for crystalline silicon-based solar cells, in the pristine form and after artificial degradation with high energy protons. The evolution of the dominating defect properties is studied through noise spectroscopy.
authors.affiliation: Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno, Italy.
authors.forename: G
authors.initials: G
authors.lastname: Landi
authors.affiliation: Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy.|CNR-SPIN, UOS di Salerno, I-84084 Fisciano, Salerno, Italy.
authors.forename: C
authors.initials: C
authors.lastname: Barone
authors.affiliation: Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy.|CNR-SPIN, UOS di Salerno, I-84084 Fisciano, Salerno, Italy.
authors.forename: C
authors.initials: C
authors.lastname: Mauro
authors.affiliation: Dipartimento di Ingegneria Industriale, Università di Salerno, I-84084 Fisciano, Salerno, Italy.
authors.forename: H C
authors.initials: HC
authors.lastname: Neitzert
authors.affiliation: Dipartimento di Fisica "E.R. Caianiello", Università di Salerno, I-84084 Fisciano, Salerno, Italy.|CNR-SPIN, UOS di Salerno, I-84084 Fisciano, Salerno, Italy.
authors.forename: S
authors.initials: S
authors.lastname: Pagano