title: Effects of Electrode Layer Band Structure on the Performance of Multilayer Graphene-hBN-Graphene Interlayer Tunnel Field Effect Transistors.
abstract: Interlayer tunnel field-effect transistors based on graphene and hexagonal boron nitride (hBN) have recently attracted much interest for their potential as beyond-CMOS devices. Using a recently developed method for fabricating rotationally aligned two-dimensional heterostructures, we show experimental results for devices with varying thicknesses and stacking order of the graphene electrode layers and also model the current-voltage behavior. We show that an increase in the graphene layer thickness results in narrower resonance. However, due to a simultaneous increase in the number of sub-bands and decrease of sub-band separation with an increase in thickness, the negative differential resistance peaks becomes less prominent and do not appear for certain conditions at room temperature. Also, we show that due to the unique band structure of odd number of layer Bernal-stacked graphene, the number of closely spaced resonance conditions increase, causing interference between neighboring resonance peaks. Although this can be avoided with even number of layer graphene, we find that in this case the bandgap opening present at high biases tend to broaden the resonance peaks.
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Sangwoo
authors.initials: S
authors.lastname: Kang
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Nitin
authors.initials: N
authors.lastname: Prasad
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Hema C P
authors.initials: HC
authors.lastname: Movva
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Amritesh
authors.initials: A
authors.lastname: Rai
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Kyounghwan
authors.initials: K
authors.lastname: Kim
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Xuehao
authors.initials: X
authors.lastname: Mou
authors.affiliation: National Institute for Material Science , 1-1Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: National Institute for Material Science , 1-1Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Leonard F
authors.initials: LF
authors.lastname: Register
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Emanuel
authors.initials: E
authors.lastname: Tutuc
authors.affiliation: Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Banerjee
keywords: Interlayer tunnel FET (ITFET); band structure; multilayer graphene; negative differential resistance (NDR); resonant tunneling; stacking order