title: Improved Performance of Electroplated CZTS Thin-Film Solar Cells with Bifacial Configuration.
abstract: Annealing in S vapor greatly improves the performance of electroplated Cu2 ZnSnS4 (CZTS) solar cells based on the bifacial configuration of Al-doped ZnO (AZO, front contact)/ZnO/CdS/CZTS/indium tin oxide (ITO, back contact), as compared to H2 S annealing in our previous works. S-vapor annealing does not cause severe damage to the conductivity of the ITO back contact. The highest device efficiency of 5.8 % was reached under 1 sun illumination from the AZO side. The well-preformed devices based on the ITO back contact demonstrate smaller series resistances and better fill factors, as compared to our substrate-type devices using Mo back contacts. An interfacial reaction at the ITO back contact has been revealed in experiments, which contributes to the formation of SnO2 -enriched interfacial layer and diffusion of In from ITO into CZTS through the Sn sites. Incorporation of In does not significantly change the optical and structural properties or the grain size of CZTS absorbers.
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States. Jie.Ge@UToledo.edu.
authors.forename: Jie
authors.initials: J
authors.lastname: Ge
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States.
authors.forename: Yue
authors.initials: Y
authors.lastname: Yu
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States.
authors.forename: Weijun
authors.initials: W
authors.lastname: Ke
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States.
authors.forename: Jian
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States.
authors.forename: Xinxuan
authors.initials: X
authors.lastname: Tan
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States.|National Renewable Energy Laboratory, Golden, CO, 80401, United States.
authors.forename: Zhiwei
authors.initials: Z
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, The Chinese Academy of Sciences, Shanghai, 800081, China.
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu
authors.affiliation: Department of Physics and Astronomy, Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio, 43606, United States. Yanfa.Yan@UToledo.edu.
authors.forename: Yanfa
authors.initials: Y
authors.lastname: Yan
mesh_terms: D000535:Aluminum / Q000737:chemistry; D011211:Electric Power Supplies; D004595:Electroplating; D012993:Solar Energy; D013440:Sulfides / Q000737:chemistry*; D017971:Tin Compounds / Q000737:chemistry
chemical_list: D013440:Sulfides; D017971:Tin Compounds; C109984:indium tin oxide; D000535:Aluminum
keywords: bifacial device; diffusion; indium tin oxide; kesterite; vapor annealing