title: Electrical Characteristics of Horizontally and Vertically Oriented Few-Layer Graphene on Si-Based Dielectrics.
abstract: Horizontally and vertically oriented few-layer graphenes have been synthesized directly on SiO2 coated Si substrates via thermal and hot-filament chemical vapor deposition, respectively. The effect of the direction of mass flow on the fabrication of graphene film is analysed and a plausible mechanism is proposed. The graphene/p-Si heterojunction is fabricated and tested for its potential in optoelectronic devices. Rectification behaviour is observed at the interface of graphene/p-Si under dark conditions. A dark current of 1.1 mA with an ideality factor of 1.5, in addition of a high rectification ratio of 15.99 at ± 0.5 V is found for the vertically oriented graphene/p-Si heterojunction.
authors.forename: Sanjay K
authors.initials: SK
authors.lastname: Behura
authors.forename: Qiaoqin
authors.initials: Q
authors.lastname: Yang
authors.forename: Akira
authors.initials: A
authors.lastname: Hirose
authors.forename: Sasmita
authors.initials: S
authors.lastname: Nayak
authors.forename: Omkar
authors.initials: O
authors.lastname: Jani
authors.forename: Indrajit
authors.initials: I
authors.lastname: Mukhopadhyay