title: Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.
abstract: Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications , 9 Wenyuan Road, Nanjing 210023, China.
authors.forename: Ye
authors.initials: Y
authors.lastname: Tao
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications , 9 Wenyuan Road, Nanjing 210023, China.
authors.forename: Lijia
authors.initials: L
authors.lastname: Xu
authors.affiliation: Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University , 74 Xuefu Road, Harbin 150080, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications , 9 Wenyuan Road, Nanjing 210023, China.
authors.forename: Runfeng
authors.initials: R
authors.lastname: Chen
authors.affiliation: Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University , 30 South Puzhu Road, Nanjing 211816, China.
authors.forename: Huanhuan
authors.initials: H
authors.lastname: Li
authors.affiliation: Key Laboratory of Functional Inorganic Material Chemistry, Ministry of Education, Heilongjiang University , 74 Xuefu Road, Harbin 150080, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xu
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing University of Posts & Telecommunications , 9 Wenyuan Road, Nanjing 210023, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Zheng
authors.affiliation: Key Laboratory of Flexible Electronics & Institute of Advanced Materials, Jiangsu National Synergetic Innovation Center for Advanced Materials, Nanjing Tech University , 30 South Puzhu Road, Nanjing 211816, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Huang