title: Controlling the work function of molybdenum disulfide by in situ metal deposition.
abstract: Control of the work function of molybdenum disulfide (MoS2) under ultrathin metal was investigated using in situ metal deposition and direct ultraviolet photoelectron spectroscopy measurement in an ultra-high vacuum system. When the metal thickness turned from two dimensional into bulk, the work function was also raised up at the nickel-MoS2 interface, barely changed at the titanium-MoS2 interface and lowered at the hafnium-MoS2 interface. Meanwhile, the mechanisms of charge transfer and band alignment with metal deposition were also discussed. The Schottky barrier at metal-MoS2 interfaces could be tailored by both types and thicknesses of deposited metal. The low work function metal was a good indicator for MoS2 contact electrodes. It paved the way towards future high performance MoS2 device applications.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, People's Republic of China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.forename: Xiongfei
authors.initials: X
authors.lastname: Song
authors.forename: Xiao
authors.initials: X
authors.lastname: Yan
authors.forename: Chunsen
authors.initials: C
authors.lastname: Liu
authors.forename: Lin
authors.initials: L
authors.lastname: Chen
authors.forename: Qingqing
authors.initials: Q
authors.lastname: Sun
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang