title: Dependence of Electron Density on Fermi Energy in N-Type Gallium Antimonide.
abstract: The majority electron density as a function of the Fermi energy is calculated in zinc blende, n-type GaSb for donor densities between 10(16) cm(-3) and 10(19) cm(-3). These calculations solve the charge neutrality equation self-consistently for a four-band model (three conduction sub-bands at Γ, L, and X and one equivalent valence band at Γ) of GaSb. Our calculations assume parabolic densities of states and thus do not treat the density-of-states modifications due to high concentrations of dopants, many body effects, and non-parabolicity of the bands. Even with these assumptions, the results are important for interpreting optical measurements such as Raman measurements that are proposed as a nondestructive method for wafer acceptance tests.
authors.affiliation: National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 USA.
authors.forename: Herbert S
authors.initials: HS
authors.lastname: Bennett
authors.affiliation: National Institute of Standards and Technology, Gaithersburg, MD 20899-8120 USA.
authors.forename: Howard
authors.initials: H
authors.lastname: Hung
keywords: Fermi energy; Raman measurements; band structure; dopants; electron density; gallium antinomide