title: Large-scale chemical assembly of atomically thin transistors and circuits.
abstract: Next-generation electronics calls for new materials beyond silicon, aiming at increased functionality, performance and scaling in integrated circuits. In this respect, two-dimensional gapless graphene and semiconducting transition-metal dichalcogenides have emerged as promising candidates due to their atomic thickness and chemical stability. However, difficulties with precise spatial control during their assembly currently impede actual integration into devices. Here, we report on the large-scale, spatially controlled synthesis of heterostructures made of single-layer semiconducting molybdenum disulfide contacting conductive graphene. Transmission electron microscopy studies reveal that the single-layer molybdenum disulfide nucleates at the graphene edges. We demonstrate that such chemically assembled atomic transistors exhibit high transconductance (10 µS), on-off ratio (∼106) and mobility (∼17 cm2V-1s-1). The precise site selectivity from atomically thin conducting and semiconducting crystals enables us to exploit these heterostructures to assemble two-dimensional logic circuits, such as an NMOS inverter with high voltage gain (up to 70).
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Mervin
authors.initials: M
authors.lastname: Zhao
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Ye
authors.affiliation: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.
authors.forename: Yimo
authors.initials: Y
authors.lastname: Han
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.
authors.forename: Yang
authors.initials: Y
authors.lastname: Xia
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.
authors.forename: Hanyu
authors.initials: H
authors.lastname: Zhu
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.
authors.forename: Siqi
authors.initials: S
authors.lastname: Wang
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Wang
authors.affiliation: School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853, USA.|Kavli Institute at Cornell for Nanoscale Science, Ithaca, New York 14853, USA.
authors.forename: David A
authors.identifier: 0000-0003-4129-0473
authors.initials: DA
authors.lastname: Muller
authors.affiliation: NSF Nanoscale Science and Engineering Center, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|Department of Physics, King Abdulaziz University, Jeddah 21589, Saudi Arabia.
authors.forename: Xiang
authors.initials: X
authors.lastname: Zhang