title: Uncooled CMOS terahertz imager using a metamaterial absorber and pn diode.
abstract: We demonstrate a low-cost uncooled terahertz (THz) imager fabricated in a standard 180 nm CMOS process. The imager is composed of a broadband THz metamaterial absorber coupled with a diode microbolometer sensor where the pn junction is used as a temperature sensitive device. The metamaterial absorber array is integrated in the top metallic layers of a six metal layer process allowing for complete monolithic integration of the metamaterial absorber and sensor. We demonstrate the capability of the detector for stand-off imaging applications by using it to form transmission and reflection images of a metallic object hidden in a manila envelope.
authors.forename: Ivonne
authors.initials: I
authors.lastname: Escorcia
authors.forename: James
authors.initials: J
authors.lastname: Grant
authors.forename: John
authors.initials: J
authors.lastname: Gough
authors.forename: David R S
authors.initials: DR
authors.lastname: Cumming