title: InGaN light emitting diodes with a nanopipe layer formed from the GaN epitaxial layer.
abstract: A Si-heavy doped GaN:Si epitaxial layer is transformed into a directional nanopipe GaN layer through a laser-scribing process and a selectively electrochemical (EC) etching process. InGaN light-emitting diodes (LEDs) with an EC-treated nanopipe GaN layer have a high light extraction efficiency. The direction of the nanopipe structure was directed perpendicular to the laser scribing line and was guided by an external bias electric field. An InGaN LED structure with an embedded nanopipe GaN layer can enhance external quantum efficiency through a one-step epitaxial growth process and a selective EC etching process. A birefringence optical property and a low effective refractive index were observed in the directional-nanopipe GaN layer.
authors.forename: Wei-Ju
authors.initials: WJ
authors.lastname: Hsu
authors.forename: Kuei-Ting
authors.initials: KT
authors.lastname: Chen
authors.forename: Wan-Chun
authors.initials: WC
authors.lastname: Huang
authors.forename: Chia-Jung
authors.initials: CJ
authors.lastname: Wu
authors.forename: Jing-Jie
authors.initials: JJ
authors.lastname: Dai
authors.forename: Sy-Hann
authors.initials: SH
authors.lastname: Chen
authors.forename: Chia-Feng
authors.initials: CF
authors.lastname: Lin