title: Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers.
abstract: We investigated how surface roughness of a Ta/Ru buffer layer affects the degradation characteristics on MgO-based magnetic tunnel junctions (MTJs). MTJs with worse surface roughness on the buffer layer showed increased resistance drift and degraded time-dependent dielectric breakdown (TDDB) characteristics. We suggest that this resulted from reduced MgO thickness on the MTJ with worse surface roughness on the buffer layer, which was estimated by the TDDB and analytic approach. As a result, surface roughness of the buffer layer is a critical factors that impacts the reliability of MTJs, and it should be controlled to have the smallest roughness value as possible.
authors.forename: Jung Min
authors.initials: JM
authors.lastname: Lee
authors.forename: Chul Min
authors.initials: CM
authors.lastname: Choi
authors.forename: Hiroaki
authors.initials: H
authors.lastname: Sukegawa
authors.forename: Jeong Yong
authors.initials: JY
authors.lastname: Lee
authors.forename: Seiji
authors.initials: S
authors.lastname: Mitani
authors.forename: Yun-Heub
authors.initials: YH
authors.lastname: Song
mesh_terms: D008277:Magnesium Oxide / Q000737:chemistry*; D012413:Rubidium / Q000737:chemistry*; D013635:Tantalum / Q000737:chemistry*
chemical_list: D008277:Magnesium Oxide; D013635:Tantalum; D012413:Rubidium