title: High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer.
abstract: In this study, high-performance InGaN-based green light-emitting diodes (LEDs) with a quaternary InAlGaN/GaN superlattice electron blocking layer (QSL-EBL) have been demonstrated. The band structural simulation was employed to investigate the electrostatic field and carriers distribution, show that the efficiency and droop behavior can be intensively improved by using a QSL-EBL in LEDs. The QSL-EBL structure can reduce the polarization-related electrostatic fields in the multiple quantum wells (MQWs), leading to a smoother band diagram and a more uniform carriers distribution among the quantum wells under forward bias. In comparison with green LEDs with conventional bulk-EBL structure, the light output power of LEDs with QSL-EBL was greatly enhanced by 53%. The efficiency droop shows only 30% at 100 A/cm2comparing to its peak value, suggesting that the QSL-EBL LED is promising for future white lighting with high performance.
authors.forename: An-Jye
authors.initials: AJ
authors.lastname: Tzou
authors.forename: Da-Wei
authors.initials: DW
authors.lastname: Lin
authors.forename: Chien-Rong
authors.initials: CR
authors.lastname: Yu
authors.forename: Zhen-Yu
authors.initials: ZY
authors.lastname: Li
authors.forename: Yu-Kuang
authors.initials: YK
authors.lastname: Liao
authors.forename: Bing-Cheng
authors.initials: BC
authors.lastname: Lin
authors.forename: Jhih-Kai
authors.initials: JK
authors.lastname: Huang
authors.forename: Chien-Chung
authors.initials: CC
authors.lastname: Lin
authors.forename: Tsung Sheng
authors.initials: TS
authors.lastname: Kao
authors.forename: Hao-Chung
authors.initials: HC
authors.lastname: Kuo
authors.forename: Chun-Yen
authors.initials: CY
authors.lastname: Chang