title: InN Quantum Dot Based Infra-Red Photodetectors.
abstract: Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of InN QDs was confirmed by X-ray diffraction. The dot densities were varied by varying the indium flux. Variation of dot density was confirmed by FESEM images. Interdigitated electrodes were fabricated using standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. The devices show strong infrared response. It was found that the samples with higher density of InN QDs showed lower dark current and higher photo current. An explanation was provided for the observations and the experimental results were validated using Silvaco Atlas device simulator.
authors.forename: Arjun
authors.initials: A
authors.lastname: Shetty
authors.forename: Mahesh
authors.initials: M
authors.lastname: Kumar
authors.forename: Basanta
authors.initials: B
authors.lastname: Roull
authors.forename: K J
authors.initials: KJ
authors.lastname: Vinoy
authors.forename: S B
authors.initials: SB
authors.lastname: Krupanidhj