title: Carrier Delocalization in Two-Dimensional Coplanar p-n Junctions of Graphene and Metal Dichalcogenides.
abstract: With the lateral coplanar heterojunctions of two-dimensional monolayer materials turning into reality, the quantitative understanding of their electronic, electrostatic, doping, and scaling properties becomes imperative. In contrast to traditional bulk 3D junctions where carrier equilibrium is reached through local charge redistribution, a highly nonlocalized charge transfer (trailing off as 1/x away from the interface) is present in lateral 2D junctions, increasing the junction size considerably. The depletion width scales as p(-1), while the differential capacitance varies very little with the doping level p. The properties of lateral 2D junctions are further quantified through numerical analysis of realistic materials, with graphene, MoS2, and their hybrid serving as examples. Careful analysis of the built-in potential profile shows strong reduction of Fermi level pinning, suggesting better control of the barrier in 2D metal-semiconductor junctions.
authors.affiliation: Department of Material Science and Nanoengineering, Department of Chemistry, and Applied Physics Program, Rice University , Houston, Texas 77005, United States.
authors.forename: Henry
authors.initials: H
authors.lastname: Yu
authors.affiliation: Department of Material Science and Nanoengineering, Department of Chemistry, and Applied Physics Program, Rice University , Houston, Texas 77005, United States.
authors.forename: Alex
authors.initials: A
authors.lastname: Kutana
authors.affiliation: Department of Material Science and Nanoengineering, Department of Chemistry, and Applied Physics Program, Rice University , Houston, Texas 77005, United States.
authors.forename: Boris I
authors.initials: BI
authors.lastname: Yakobson
keywords: 2D material; Fermi level pinning; Heterojunction; dichalcogenide; graphene; weak electronic screening