title: Effect of interlayer interactions on exciton luminescence in atomic-layered MoS2 crystals.
abstract: The atomic-layered semiconducting materials of transition metal dichalcogenides are considered effective light sources with both potential applications in thin and flexible optoelectronics and novel functionalities. In spite of the great interest in optoelectronic properties of two-dimensional transition metal dichalcogenides, the excitonic properties still need to be addressed, specifically in terms of the interlayer interactions. Here, we report the distinct behavior of the A and B excitons in the presence of interlayer interactions of layered MoS2 crystals. Micro-photoluminescence spectroscopic studies reveal that on the interlayer interactions in double layer MoS2 crystals, the emission quantum yield of the A exciton is drastically changed, whereas that of the B exciton remains nearly constant for both single and double layer MoS2 crystals. First-principles density functional theory calculations confirm that a significant charge redistribution occurs in the double layer MoS2 due to the interlayer interactions producing a local electric field at the interfacial region. Analogous to the quantum-confined Stark effect, we suggest that the distinct behavior of the A and B excitons can be explained by a simplified band-bending model.
authors.affiliation: Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
authors.forename: Jung Gon
authors.initials: JG
authors.lastname: Kim
authors.affiliation: Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
authors.forename: Won Seok
authors.initials: WS
authors.lastname: Yun
authors.affiliation: Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
authors.forename: Sunghwan
authors.initials: S
authors.lastname: Jo
authors.affiliation: Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
authors.forename: JaeDong
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Emerging Materials Science, DGIST, Daegu 42988, South Korea.
authors.forename: Chang-Hee
authors.initials: CH
authors.lastname: Cho