title: Aluminum nitride electro-optic phase shifter for backend integration on silicon.
abstract: An AlN electro-optic phase shifter with a parallel plate capacitor structure is fabricated on Si using the back-end complementary metal-oxide-semiconductor technology, which is feasible for multilayer photonics integration. The modulation efficiency (Vπ⋅Lπproduct) measured from the fabricated waveguide-ring resonators and Mach-Zehnder Interferometer (MZI) modulators near the 1550-nm wavelength is ∼240 V⋅cm for the transverse electric (TE) mode and ∼320 V⋅cm for the transverse magnetic (TM) mode, from which the Pockels coefficient of the deposited AlN is deduced to be ∼1.0 pm/V for both TE and TM modes. The methods for further modulation efficiency improvement are addressed.
authors.forename: Shiyang
authors.initials: S
authors.lastname: Zhu
authors.forename: Guo-Qiang
authors.initials: GQ
authors.lastname: Lo