title: The Performance Improvement of N2 Plasma Treatment on ZrO2 Gate Dielectric Thin-Film Transistors with Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition IGZO Channel.
abstract: The aim of this paper is to illustrate the N2 plasma treatment for high-κ ZrO2 gate dielectric stack (30 nm) with indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs). Experimental results reveal that a suitable incorporation of nitrogen atoms could enhance the device performance by eliminating the oxygen vacancies and provide an amorphous surface with better surface roughness. With N2 plasma treated ZrO2 gate, IGZO channel is fabricated by atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique. The best performance of the AP-PECVD IGZO TFTs are obtained with 20 W-90 sec N2 plasma treatment with field-effect mobility (μ(FET)) of 22.5 cm2/V-s, subthreshold swing (SS) of 155 mV/dec, and on/off current ratio (I(on)/I(off)) of 1.49 x 10(7).
authors.forename: Chien-Hung
authors.initials: CH
authors.lastname: Wu
authors.forename: Bo-Wen
authors.initials: BW
authors.lastname: Huang
authors.forename: Kow-Ming
authors.initials: KM
authors.lastname: Chang
authors.forename: Shui-Jinn
authors.initials: SJ
authors.lastname: Wang
authors.forename: Jian-Hong
authors.initials: JH
authors.lastname: Lin
authors.forename: Jui-Mei
authors.initials: JM
authors.lastname: Hsu