title: Effect of the ZnS Shell Layer on the Electrical Properties of Organic Bistable Devices Fabricated Utilizing CdSe/CdS/ZnS Core-Shell-Shell Quantum Dots Embedded in a Poly(methylmethacrylate) Layer.
abstract: X-ray photoelectron spectroscopy spectra showed that the synthesized elements of the CdSe/CdS/ ZnS QDs were Cd, Se, Zn, and S. Organic bistable devices (OBDs) containing CdSe/CdS/ZnS quantum dots (QDs) and a poly(methylmethacrylate) (PMMA) layer were fabricated on indium-tin-oxide (ITO)-deposited glass substrates. Current-voltage (I-V) curves showed that the memory margin of the Al/(CdSe/CdS/ZnS QDs) embedded in PMMA layer/ITO device at 300 K was larger than that of the device without a ZnS shell layer. The retention time of the OBDs was above 1 x 10(4) s, indicative of the stability of the device. The memory mechanisms were described by using charge trapping and tunneling processes on the basis of the energy diagram and the I-V curves.
authors.forename: Nam Hyun
authors.initials: NH
authors.lastname: Lee
authors.forename: Dong Yeol
authors.initials: DY
authors.lastname: Yun
authors.forename: Dong Hyuk
authors.initials: DH
authors.lastname: Choi
authors.forename: Sang Wook
authors.initials: SW
authors.lastname: Kim
authors.forename: Tae Whan
authors.initials: TW
authors.lastname: Kim