title: Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications.
abstract: A complete electrical characterization of hydrogenated amorphous silicon layers (a-Si:H) deposited on crystalline silicon (c-Si) substrates by electron cyclotron resonance chemical vapor deposition (ECR-CVD) was carried out. These structures are of interest for photovoltaic applications. Different growth temperatures between 30 and 200 °C were used. A rapid thermal annealing in forming gas atmosphere at 200 °C during 10 min was applied after the metallization process. The evolution of interfacial state density with the deposition temperature indicates a better interface passivation at higher growth temperatures. However, in these cases, an important contribution of slow states is detected as well. Thus, using intermediate growth temperatures (100-150 °C) might be the best choice.
authors.affiliation: Department of Electronics, University of Valladolid, Paseo Belén, 15, 47011, Valladolid, Spain.
authors.forename: Héctor
authors.initials: H
authors.lastname: García
authors.affiliation: Department of Electronics, University of Valladolid, Paseo Belén, 15, 47011, Valladolid, Spain. helena@ele.uva.es.
authors.forename: Helena
authors.initials: H
authors.lastname: Castán
authors.affiliation: Department of Electronics, University of Valladolid, Paseo Belén, 15, 47011, Valladolid, Spain.
authors.forename: Salvador
authors.initials: S
authors.lastname: Dueñas
authors.affiliation: Department of Electronics, University of Valladolid, Paseo Belén, 15, 47011, Valladolid, Spain.
authors.forename: Luis
authors.initials: L
authors.lastname: Bailón
authors.affiliation: Dpto. Física Aplicada III, Universidad Complutense de Madrid, CEI Campus Moncloa, UCM-UPM, Madrid, Spain.
authors.forename: Rodrigo
authors.initials: R
authors.lastname: García-Hernansanz
authors.affiliation: Dpto. Física Aplicada III, Universidad Complutense de Madrid, CEI Campus Moncloa, UCM-UPM, Madrid, Spain.
authors.forename: Javier
authors.initials: J
authors.lastname: Olea
authors.affiliation: Dpto. Física Aplicada III, Universidad Complutense de Madrid, CEI Campus Moncloa, UCM-UPM, Madrid, Spain.
authors.forename: Álvaro
authors.initials: Á
authors.lastname: Del Prado
authors.affiliation: Dpto. Física Aplicada III, Universidad Complutense de Madrid, CEI Campus Moncloa, UCM-UPM, Madrid, Spain.
authors.forename: Ignacio
authors.initials: I
authors.lastname: Mártil
keywords: Deposition temperature dependencies; Electron cyclotron resonance chemical vapor deposition; Hydrogenated amorphous silicon; Interfacial state density; Photovoltaics