title: High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.
abstract: Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.
authors.forename: Yu
authors.initials: Y
authors.lastname: Matsuda
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nakahara
authors.forename: Daisuke
authors.initials: D
authors.lastname: Michiura
authors.forename: Kazuyuki
authors.initials: K
authors.lastname: Uno
authors.forename: Ichiro
authors.initials: I
authors.lastname: Tanaka
mesh_terms: D003460:Crystallization / Q000379:methods; D017097:Electric Impedance; D004566:Electrodes; D004579:Electron Transport; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure; D017646:Organosilicon Compounds / Q000737:chemistry*; D066330:Printing, Three-Dimensional; D012996:Solutions; D014173:Transistors, Electronic
chemical_list: D017646:Organosilicon Compounds; D012996:Solutions; C522282:bis(triisopropylsilylethynyl)pentacene; C569780:polysilsesquioxane