title: Improved Reliability of InGaN-Based Light-Emitting Diodes by HfO2 Passivation Layer.
abstract: We utilized a passivation layer to improve the leakage current and reliability characteristics of GaN-based light-emitting diodes. The electrical and optical characteristics of the fabricated LEDs were characterized by current-voltage and optical power measurements. The HfO2 passivation layer showed no optical power degradation and suppressed leakage current. The low deposition temper- ature of sputtered HfO2 is responsible for the improved reliability of the LEDs because it suppresses the diffusion of hydrogen plasma into GaN to form harmful Mg-H complexes.
authors.forename: Seung Hyun
authors.initials: SH
authors.lastname: Park
authors.forename: Yoon Seok
authors.initials: YS
authors.lastname: Kim
authors.forename: Tae Hoon
authors.initials: TH
authors.lastname: Kim
authors.forename: Sang Wan
authors.initials: SW
authors.lastname: Ryu