title: Tuning the Electrical Properties of Graphene via Nitrogen Plasma-Assisted Chemical Modification.
abstract: The control in electrical properties of graphene is essentially required in order to realize graphenebased nanoelectronics. In this study, N-doped graphene was successfully obtained via nitrogen plasma treatment. Graphene was synthesized on copper foil using thermal chemical vapor deposition. After N2 plasma treatment, the G-band of the graphene was blueshifted and the intensity ratio of 2D- to G-bands decreased with increasing the plasma power. Pyrrolic-N bonding configuration induced by N2 plasma treatment was studied by X-ray photoelectron spectroscopy. Remarkably, electrical characterization including Hall measurement and I-V characteristics of the N-doped graphene exhibit semiconducting behavior as well as the n-type doping effect.
authors.forename: Min Wook
authors.initials: MW
authors.lastname: Jung
authors.forename: Wooseok
authors.initials: W
authors.lastname: Song
authors.forename: Dae Sung
authors.initials: DS
authors.lastname: Jung
authors.forename: Sun Sook
authors.initials: SS
authors.lastname: Lee
authors.forename: Chong-Yun
authors.initials: CY
authors.lastname: Park
authors.forename: Ki-Seok
authors.initials: KS
authors.lastname: An
mesh_terms: D006108:Graphite / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D056951:Photoelectron Spectroscopy; D058626:Plasma Gases
chemical_list: D058626:Plasma Gases; D006108:Graphite; D009584:Nitrogen