title: Effect of Oxygen-deficiencies on Resistance Switching in Amorphous YFe0.5Cr0.5O3-d films.
abstract: Herein, we demonstrate the contribution of the oxygen-deficiencies on the bipolar resistance switching (RS) properties of amorphous-YFe0.5Cr0.5O3-d (a-YFCO) films. The a-YFCO films were prepared under various oxygen pressures to tune the concentration of oxygen-deficiencies in the films. The XPS data verify that the oxygen-deficiencies increase with decreasing oxygen pressure. The RS property becomes more pronounced with more oxygen-deficiencies in a-YFCO films. Based on the Ohmic conduction measurements in the low resistance state, we confirm that the RS mechanism is related to the migration of oxygen-deficiencies. The enhanced RS and long retention in a-YFCO suggest a great potential for applications in nonvolatile memory devices.
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Xianjie
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Chang
authors.initials: C
authors.lastname: Hu
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Yongli
authors.initials: Y
authors.lastname: Song
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Xiaofeng
authors.initials: X
authors.lastname: Zhao
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Lingli
authors.initials: L
authors.lastname: Zhang
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Zhe
authors.initials: Z
authors.lastname: Lv
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.|Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Zhiguo
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.|Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Sui
authors.affiliation: Department of Physics, Harbin Institute of Technology, Harbin 150001, China.|Academy of Fundamental and Interdisciplinary Sciences, Harbin Institute of Technology, Harbin 150001, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Song