title: Partial Dissolution of Charge Order Phase Observed in β-(BEDT-TTF)2PF6 Single Crystal Field Effect Transistor.
abstract: The effect of an applied gate electric field on the charge-order phase in β-(BEDT-TTF)2PF6 single-crystal field-effect transistor structure was observed at around room temperature by technical improvement with respect to sample preparation and electrical measurements. A relatively slight but systematic increase of the electrical conductance induced by the applied gate electric field and its temperature dependence was observed at around the metal-insulator transition temperature (TMI). The temperature dependence of the modulated electrical conductance demonstrated that TMI was shifted toward the lower side by application of a gate electric field, which corresponds to partial dissolution of the charge-order phase. The thickness of the partially dissolved charge order region was estimated to be several score times larger than the charge accumulation region.
authors.forename: Masatoshi
authors.initials: M
authors.lastname: Sakai
authors.forename: Norifumi
authors.initials: N
authors.lastname: Moritoshi
authors.forename: Shigekazu
authors.initials: S
authors.lastname: Kuniyoshi
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Yamauchi
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Kudo
authors.forename: Hyuma
authors.initials: H
authors.lastname: Masu