title: Hexagonal Boron Nitride assisted transfer and encapsulation of large area CVD graphene.
abstract: We report a CVD hexagonal boron nitride (hBN-) assisted transfer method that enables a polymer-impurity free transfer process and subsequent top encapsulation of large-area CVD-grown graphene. We demonstrate that the CVD hBN layer that is utilized in this transfer technique acts as a buffer layer between the graphene film and supporting polymer layer. We show that the resulting graphene layers possess lower doping concentration, and improved carrier mobilities compared to graphene films produced by conventional transfer methods onto untreated SiO2/Si, SAM-modified and hBN covered SiO2/Si substrates. Moreover, we show that the top hBN layer used in the transfer process acts as an effective top encapsulation resulting in improved stability to ambient exposure. The transfer method is applicable to other CVD-grown 2D materials on copper foils, thereby facilitating the preparation of van der Waals heterostructures with controlled doping.
authors.affiliation: Blackett Laboratory, Imperial College, Prince Consort Rd, London SW7 2BZ, UK.
authors.forename: Viktoryia
authors.initials: V
authors.lastname: Shautsova
authors.affiliation: Blackett Laboratory, Imperial College, Prince Consort Rd, London SW7 2BZ, UK.
authors.forename: Adam M
authors.initials: AM
authors.lastname: Gilbertson
authors.affiliation: Blackett Laboratory, Imperial College, Prince Consort Rd, London SW7 2BZ, UK.|National Physical Laboratory, Hampton Rd, Teddington, Middlesex TW11 0LW, UK.
authors.forename: Nicola C G
authors.initials: NC
authors.lastname: Black
authors.affiliation: Blackett Laboratory, Imperial College, Prince Consort Rd, London SW7 2BZ, UK.
authors.forename: Stefan A
authors.initials: SA
authors.lastname: Maier
authors.affiliation: Blackett Laboratory, Imperial College, Prince Consort Rd, London SW7 2BZ, UK.
authors.forename: Lesley F
authors.initials: LF
authors.lastname: Cohen