title: Amplified Emission and Field-Effect Transistor Characteristics of One-Dimensionally Structured 2,5-Bis(4-biphenylyl)thiophene Crystals.
abstract: One-dimensional (1D) structures of 2,5-bis(4-biphenylyl)thiophene (BP1T) crystals are fabricated for light amplification and field-effect transistor (FET) measurements. A strip-shaped 1D structure (10 µm width) made by photolitography of a vapor-deposited polycrystalline film shows amplified spontaneous emission and lasing oscillations under optical pumping. An FET fabricated with this 1D structure exhibits hole-conduction with a mobility of µh = 8.0 x 10(-3) cm2/Vs. Another 1 D-structured FET is fabricated with epitaxially grown needle-like crystals of BP1T. This needle-crystal FET exhibits higher mobility of µh = 0.34 cm2/Vs. This improved hole mobility is attributed to the single-crystal channel of epitaxial needles while the grain boudaries in the polycrystalline 1 D-structure decrease the carrier transport.
authors.forename: Kazumasa
authors.initials: K
authors.lastname: Hashimoto
authors.forename: Fumio
authors.initials: F
authors.lastname: Sasaki
authors.forename: Shu
authors.initials: S
authors.lastname: Hotta
authors.forename: Hisao
authors.initials: H
authors.lastname: Yanagi
mesh_terms: D000669:Amplifiers, Electronic; D003460:Crystallization / Q000379:methods; D004867:Equipment Design; D019544:Equipment Failure Analysis; D053758:Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*; D013876:Thiophenes / Q000737:chemistry*; D014173:Transistors, Electronic
chemical_list: D013876:Thiophenes