title: Chemical Vapor Deposition of MoS2: Insight Into the Growth Mechanism by Separated Gas Flow Experiments.
abstract: We report detailed experiments on chemical vapor deposition of an atomic' layer semiconductor MoS2. We developed a new type of CVD system in which MoO3 and S sources are separately supplied to the substrates. It has become possible to precisely control the supply of the materials separately in the order of seconds. Raman and XPS analysis of the films grown under various conditions revealed that the initially obtained films are S-deficient and complete stoichiometry is reached after several minutes under S vapor flow.
authors.forename: Takashi
authors.initials: T
authors.lastname: Yanase
authors.forename: Sho
authors.initials: S
authors.lastname: Watanabe
authors.forename: Mengting
authors.initials: M
authors.lastname: Weng
authors.forename: Taro
authors.initials: T
authors.lastname: Nagahama
authors.forename: Toshihiro
authors.initials: T
authors.lastname: Shimada