title: Growth of GaN micro/nanolaser arrays by chemical vapor deposition.
abstract: Optically pumped ultraviolet lasing at room temperature based on GaN microwire arrays with Fabry-Perot cavities is demonstrated. GaN microwires have been grown perpendicularly on c-GaN/sapphire substrates through simple catalyst-free chemical vapor deposition. The GaN microwires are [0001] oriented single-crystal structures with hexagonal cross sections, each with a diameter of ∼1 μm and a length of ∼15 μm. A possible growth mechanism of the vertical GaN microwire arrays is proposed. Furthermore, we report room-temperature lasing in optically pumped GaN microwire arrays based on the Fabry-Perot cavity. Photoluminescence spectra exhibit lasing typically at 372 nm with an excitation threshold of 410 kW cm(-2). The result indicates that these aligned GaN microwire arrays may offer promising prospects for ultraviolet-emitting micro/nanodevices.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology (NCNST), Beijing, 100083, People's Republic of China. Department of Physics and Laboratory of Materials Physic, Zhengzhou University, Zhengzhou, 450001, People's Republic of China.
authors.forename: Haitao
authors.initials: H
authors.lastname: Liu
authors.forename: Hanlu
authors.initials: H
authors.lastname: Zhang
authors.forename: Lin
authors.initials: L
authors.lastname: Dong
authors.forename: Yingjiu
authors.initials: Y
authors.lastname: Zhang
authors.forename: Caofeng
authors.initials: C
authors.lastname: Pan