title: Memory window engineering of Ta2O5-x oxide-based resistive switches via incorporation of various insulating frames.
abstract: Three-dimensional (3D) stackable memory frames, including nano-scaled crossbar arrays, are one of the most reliable building blocks to meet the demand of high-density non-volatile memory electronics. However, their utilization has the disadvantage of introducing issues related to sneak paths, which can negatively impact device performance. We address the enhancement of complementary resistive switching (CRS) features via the incorporation of insulating frames as a generic approach to extend their use; here, a Pt/Ta2O5-x/Ta/Ta2O5-x/Pt frame is chosen as the basic CRS cell. The incorporation of Ta/Ta2O5-x/Ta or Pt/amorphous TaN/Pt insulting frames into the basic CRS cell ensures the appreciably advanced memory features of CRS cells including higher on/off ratios, improved read margins, and increased selectivity without reliability degradation. Experimental observations identified that a suitable insulating frame is crucial for adjusting the abrupt reset events of the switching element, thereby facilitating the enhanced electrical characteristics of CRS cells that are suitable for practical applications.
authors.affiliation: Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.
authors.forename: Ah Rahm
authors.initials: AR
authors.lastname: Lee
authors.affiliation: Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.
authors.forename: Gwang Ho
authors.initials: GH
authors.lastname: Baek
authors.affiliation: Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
authors.forename: Tae Yoon
authors.initials: TY
authors.lastname: Kim
authors.affiliation: Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
authors.forename: Won Bae
authors.initials: WB
authors.lastname: Ko
authors.affiliation: Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
authors.forename: Seung Mo
authors.initials: SM
authors.lastname: Yang
authors.affiliation: Department of Semiconductor Science, Dongguk University, Seoul, 100-715, South Korea.
authors.forename: Jongmin
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Semiconductor Science, Dongguk University, Seoul, 100-715, South Korea.
authors.forename: Hyun Sik
authors.initials: HS
authors.lastname: Im
authors.affiliation: Division of Nanoscale Semiconductor Engineering, Hanyang University, Seoul, 133-791, South Korea.|Novel Functional Materials and Devices Lab, The Research Institute for Natural Science, Department of Physics, Hanyang University, Seoul 133-791, South Korea.
authors.forename: Jin Pyo
authors.initials: JP
authors.lastname: Hong