title: Manipulation of Nanoscale Domain Switching Using an Electron Beam with Omnidirectional Electric Field Distribution.
abstract: Reversible ferroelectric domain (FD) manipulation with a high spatial resolution is critical for memory storage devices based on thin film ferroelectric materials. FD can be manipulated using techniques that apply heat, mechanical stress, or electric bias. However, these techniques have some drawbacks. Here we propose to use an electron beam with an omnidirectional electric field as a tool for erasable stable ferroelectric nanodomain manipulation. Our results suggest that local accumulation of charges contributes to the local electric field that determines domain configurations.
authors.affiliation: School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia.
authors.forename: Zibin
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Institute for Superconducting and Electronic Materials, Faculty of Engineering, Australian Institute for Innovative Materials, University of Wollongong, Wollongong, New South Wales 2522, Australia.
authors.forename: Xiaolin
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia.|Australian Institute for Nanoscale Science and Technology, The University of Sydney, Sydney, New South Wales 2006, Australia.
authors.forename: Simon P
authors.initials: SP
authors.lastname: Ringer
authors.affiliation: School of Aerospace, Mechanical and Mechatronic Engineering, The University of Sydney, Sydney, New South Wales 2006, Australia.
authors.forename: Xiaozhou
authors.initials: X
authors.lastname: Liao