title: Switching Mechanisms of Nonvolatile Memory Devices Fabricated with a Polydopamine Layer.
abstract: Nonvolatile memory devices based on a polydopamine (PDA) layer were fabricated by using a dip-coating process. Atomic force microscopy images revealed that the PDA layer had a conformal surface. The energy dispersive X-ray data showed the atomic stoichiometry of nitrogen and carbon in the PDA layer. The capacitance-voltage (C-V) curves of the Al/PDA/n-Si memory devices at 300 K showed a hysteresis with a large flat band shift, indicating that the incomplete PDA layer acted as a charge storage in the memory device. The switching mechanisms for the writing and erasing processes for the Al/PDA/n-Si devices are described on the basis of the C-V results and the energy band diagrams.
authors.forename: Hee Yeon
authors.initials: HY
authors.lastname: Yang
authors.forename: Dong Yeol
authors.initials: DY
authors.lastname: Yun
authors.forename: Yu Na
authors.initials: YN
authors.lastname: Kim
authors.forename: Jae-Min
authors.initials: JM
authors.lastname: Hong
authors.forename: Tae Whan
authors.initials: TW
authors.lastname: Kim
mesh_terms: D007211:Indoles; D016247:Information Storage and Retrieval; D011108:Polymers
chemical_list: D007211:Indoles; D011108:Polymers; C568283:polydopamine