title: Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors.
abstract: Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.
authors.forename: Hideto
authors.initials: H
authors.lastname: Shibao
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nakahara
authors.forename: Kazuyuki
authors.initials: K
authors.lastname: Uno
authors.forename: Ichiro
authors.initials: I
authors.lastname: Tanaka
mesh_terms: D003460:Crystallization / Q000379:methods; D017097:Electric Impedance; D004867:Equipment Design; D019544:Equipment Failure Analysis; D006244:Hardness / Q000528:radiation effects; D008567:Membranes, Artificial; D053758:Nanoparticles / Q000737:chemistry* / Q000528:radiation effects / Q000648:ultrastructure; D009279:Naphthacenes / Q000737:chemistry*; D017646:Organosilicon Compounds / Q000737:chemistry* / Q000528:radiation effects; D014173:Transistors, Electronic; D014466:Ultraviolet Rays
chemical_list: D008567:Membranes, Artificial; D009279:Naphthacenes; D017646:Organosilicon Compounds; C569780:polysilsesquioxane; C523499:pentacene