title: The effects of nanocavity and photonic crystal in InGaN/GaN nanorod LED arrays.
abstract: InGaN/GaN nanorod light-emitting diode (LED) arrays were fabricated using nanoimprint and reactive ion etching. The diameters of the nanorods range from 120 to 300 nm. The integral photoluminescence (PL) intensity for 120 nm nanorod LED array is enhanced as 13 times compared to that of the planar one. In angular-resolved PL (ARPL) measurements, there are some strong lobes as resonant regime appeared in the far-field radiation patterns of small size nanorod array, in which the PL spectra are sharp and intense. The PL lifetime for resonant regime is 0.088 ns, which is 40 % lower than that of non-resonant regime for 120 nm nanorod LED array. At last, three dimension finite difference time domain (FDTD) simulation is performed. The effects of guided modes coupling in nanocavity and extraction by photonic crystals are explored.
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Qianqian
authors.identifier: http://orcid.org/0000-0003-0791-3008
authors.initials: Q
authors.lastname: Jiao
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China. zzchen@pku.edu.cn.
authors.forename: Zhizhong
authors.initials: Z
authors.lastname: Chen
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Yulong
authors.initials: Y
authors.lastname: Feng
authors.affiliation: Dongguan Institute of Optoelectronics, Peking University, Dongguan, 523808, Guangdong, China.
authors.forename: Shunfeng
authors.initials: S
authors.lastname: Li
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Shengxiang
authors.initials: S
authors.lastname: Jiang
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Junze
authors.initials: J
authors.lastname: Li
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Yifan
authors.initials: Y
authors.lastname: Chen
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Tongjun
authors.initials: T
authors.lastname: Yu
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Xiangning
authors.initials: X
authors.lastname: Kang
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen
authors.affiliation: State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Haidian, Beijing, China.|Dongguan Institute of Optoelectronics, Peking University, Dongguan, 523808, Guangdong, China.
authors.forename: Guoyi
authors.initials: G
authors.lastname: Zhang
keywords: GaN; Guided modes; Light emitting diode; Nanocavity; Photonic crystal