title: Highly Efficient Nondoped Organic Light Emitting Diodes Based on Thermally Activated Delayed Fluorescence Emitter with Quantum-Well Structure.
abstract: Highly efficiency nondoped thermally activated delayed fluorescence (TADF) organic light emitting diodes (OLEDs) with multiquantum wells structure were demonstrated. By using an emitting layer with seven quantum wells, the nondoped TADF OLEDs exhibit high efficiency with EQE of 22.6%, a current efficiency of 69 cd/A, and a power efficiency of 50 lm/W, which are higher than those of the conventional doped OLED and among the best of the TADF OLEDs. The high performance of the devices can be ascribed to effective confinement of the charges and excitons in the emission layer by the quantum well structure. The emission layer with multiquantum well structure is demonstrated to be cost effective for highly efficient nondoped TADF OLEDs and holds great potential for organic electronics.
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Lingqiang
authors.initials: L
authors.lastname: Meng
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Xiaofang
authors.initials: X
authors.lastname: Wei
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Liu
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Yongzhen
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Xiangbin
authors.initials: X
authors.lastname: Kong
authors.affiliation: Soochow University , Suzhou, Jiangsu Province, China.
authors.forename: Xiaopeng
authors.initials: X
authors.lastname: Lv
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Pengfei
authors.initials: P
authors.lastname: Wang
authors.affiliation: Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang
keywords: TXO-PhCz; nondoped; organic light emitting diodes; quantum-well structure; thermally activated delayed fluorescence