title: Role of hydrogen in volatile behaviour of defects in SiO2-based electronic devices.
abstract: Charge capture and emission by point defects in gate oxides of metal-oxide-semiconductor field-effect transistors (MOSFETs) strongly affect reliability and performance of electronic devices. Recent advances in experimental techniques used for probing defect properties have led to new insights into their characteristics. In particular, these experimental data show a repeated dis- and reappearance (the so-calledvolatility) of the defect-related signals. We use multiscale modelling to explain the charge capture and emission as well as defect volatility in amorphous SiO2gate dielectrics. We first briefly discuss the recent experimental results and use a multiphonon charge capture model to describe the charge-trapping behaviour of defects in silicon-based MOSFETs. We then link this model toab initiocalculations that investigate the three most promising defect candidates. Statistical distributions of defect characteristics obtained fromab initiocalculations in amorphous SiO2are compared with the experimentally measured statistical properties of charge traps. This allows us to suggest an atomistic mechanism to explain the experimentally observed volatile behaviour of defects. We conclude that the hydroxyl-E' centre is a promising candidate to explain all the observed features, including defect volatility.
authors.affiliation: Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
authors.forename: Yannick
authors.identifier: 0000-0002-9531-6459
authors.initials: Y
authors.lastname: Wimmer
authors.affiliation: Institute for Microelectronics, Vienna University of Technology, Gußhausstraße 27-29/E360, 1040 Wien, Austria; Department of Physics and Astronomy and London Centre for Nanotechnology, University College London, Gower Street, London WC1E 6BT, UK.
authors.forename: Al-Moatasem
authors.initials: AM
authors.lastname: El-Sayed
authors.affiliation: Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Gös
authors.affiliation: Institute for Microelectronics , Vienna University of Technology , Gußhausstraße 27-29/E360, 1040 Wien, Austria.
authors.forename: Tibor
authors.initials: T
authors.lastname: Grasser
authors.affiliation: Department of Physics and Astronomy and London Centre for Nanotechnology , University College London , Gower Street, London WC1E 6BT, UK.
authors.forename: Alexander L
authors.initials: AL
authors.lastname: Shluger
keywords: NBTI; RTN; multiscale modelling; silica defects