title: Enhancement of Photoluminescence in BaSi2O2N2:Eu2+ by Partial Ge4+ Substitution for Si4+.
abstract: Ge4+-doped BaSi2O2N2: Eu2+ phosphors were prepared by a high temperature solid-state reaction method. The phase structure, photoluminescence (PL) properties and PL thermal stability of the as-synthesized samples were investigated. The emission intensity of the Ba(Si0.99Ge0.01)2O2N2: 0.05Eu2+ phosphor was 41.7% greater than that of BaSi2O2N2:0.05Eu2+. When the temperature increased to 150 °C, the emission intensity of Ba(Si0.99Ge0.01)2O2N2:0.05Eu2+ phosphor was 67.0% of the initial value at room temperature. This value was 22.9% greater than that of BaSi2O2N2:0.05Eu2+. The related mechanism has also been explained through the crystal field theory. All these results indicated that the Ge4+-doped BaSi2O2N2:0.05Eu2+ phosphor is a promising material for application in white light emitting diodes.
authors.forename: Baochen
authors.initials: B
authors.lastname: Wang
authors.forename: Jian
authors.initials: J
authors.lastname: Chen
authors.forename: Yufei
authors.initials: Y
authors.lastname: Xia
authors.forename: Yangai
authors.initials: Y
authors.lastname: Liu
mesh_terms: D003460:Crystallization / Q000379:methods; D008027:Light; D049449:Luminescence; D008163:Luminescent Measurements / Q000379:methods*; D008422:Materials Testing; D053768:Metal Nanoparticles / Q000737:chemistry* / Q000648:ultrastructure*