title: Very Smooth Ultrananocrystalline Diamond Film Growth by a Novel Pretreatment Technique.
abstract: Very smooth ultrananocrystalline diamond (UNCD) film growth on SiC substrate was achieved by a novel pretreatment technique consisted of SiC surface texturing and deaggregation of nanodiamond (ND) seed particles. Texturing of SiC surfaces in Ar and SF6/02 plasmas was found to be able to provide normalized roughness values of 0.5-7.0 compared to the untreated surface. SiC surface plasma-textured and seeded with H2 heat-treated ND particles at 600 degrees C showed the highest nucleation density of ~44.2 x 10(11) cm(-2) and a highly uniform coverage of surface with very fine ND seeds. The UNCD film grown with this new pretreatment technique showed a very smooth surface morphology consisted of small and uniformly distributed grains.
authors.forename: Jong Cheon
authors.initials: JC
authors.lastname: Park
authors.forename: Sungu
authors.initials: S
authors.lastname: Hwang
authors.forename: Tae Gyu
authors.initials: TG
authors.lastname: Kim
authors.forename: Jin Kon
authors.initials: JK
authors.lastname: Kim
authors.forename: Ho Hwan
authors.initials: HH
authors.lastname: Chun
authors.forename: Sung Chul
authors.initials: SC
authors.lastname: Shin
authors.forename: Hyun
authors.initials: H
authors.lastname: Cho