title: New Material Transistor with Record-High Field-Effect Mobility among Wide-Band-Gap Semiconductors.
abstract: At an ultrathin 5 nm, we report a new high-mobility tin oxide (SnO2) metal-oxide-semiconductor field-effect transistor (MOSFET) exhibiting extremely high field-effect mobility values of 279 and 255 cm(2)/V-s at 145 and 205 °C, respectively. These values are the highest reported mobility values among all wide-band-gap semiconductors of GaN, SiC, and metal-oxide MOSFETs, and they also exceed those of silicon devices at the aforementioned elevated temperatures. For the first time among existing semiconductor transistors, a new device physical phenomenon of a higher mobility value was measured at 45-205 °C than at 25 °C, which is due to the lower optical phonon scattering by the large SnO2 phonon energy. Moreover, the high on-current/off-current of 4 × 10(6) and the positive threshold voltage of 0.14 V at 25 °C are significantly better than those of a graphene transistor. This wide-band-gap SnO2 MOSFET exhibits high mobility in a 25-205 °C temperature range, a wide operating voltage of 1.5-20 V, and the ability to form on an amorphous substrate, rendering it an ideal candidate for multifunctional low-power integrated circuit (IC), display, and brain-mimicking three-dimensional IC applications.
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University , Hsinchu 300, Taiwan.
authors.forename: Cheng Wei
authors.initials: CW
authors.lastname: Shih
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University , Hsinchu 300, Taiwan.
authors.forename: Albert
authors.initials: A
authors.lastname: Chin
keywords: SnO2; field-effect mobility; high temperature; transistor; wide energy band gap