title: Mass Production of Nanogap Electrodes toward Robust Resistive Random Access Memory.
abstract: Nanogap electrodes arrays are fabricated by combining atomic layer deposition, adhesive tape, and chemical etching. A unipolar nonvolatile resistive-switching behavior is identified in the nanogap electrodes, showing stable, robust performance and the multibit storage ability, demonstrating great potential in ultrahigh-density storage. The formation and dissolution of Si conductive filaments and migration of Au atoms is the mechanism behind the resistive switching.
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Ajuan
authors.initials: A
authors.lastname: Cui
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Collaborative Innovation Center of Quantum Matter, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Zhe
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. dhl522@iccas.ac.cn.
authors.forename: Huanli
authors.initials: H
authors.lastname: Dong
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Fangxu
authors.initials: F
authors.lastname: Yang
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Yonggang
authors.initials: Y
authors.lastname: Zhen
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Collaborative Innovation Center of Quantum Matter, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Wuxia
authors.initials: W
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Collaborative Innovation Center of Quantum Matter, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Collaborative Innovation Center of Quantum Matter, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Changzhi
authors.initials: C
authors.lastname: Gu
authors.affiliation: Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China.
authors.forename: Xiaotao
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China.
authors.forename: Rongjin
authors.initials: R
authors.lastname: Li
authors.affiliation: Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China. huwp@iccas.ac.cn.|Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Department of Chemistry, School of Science, Tianjin University and Collaborative Innovation Center of Chemical Science and Engineering (Tianjin), Tianjin, 300072, China. huwp@iccas.ac.cn.
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
keywords: nanofabrication; nanogap electrodes; nonvolatile resistive switches