title: Investigation of Defect Free SiGe Nanowire Biosensor Modified by Dual Plasma Technology.
abstract: Semiconductor nanowires (NWs) have been extensively investigated and discussed in various fields due to their unique physical properties. In this paper, we successfully produce SiGe NWs biosensor by VLSI technology. We propose the dual plasma technology with CF4 plasma pre-treatment and N2 plasma post-treatment for repairs of defects as well as optimization of SiGe NWs biosensor. The results indicate that sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8%, suitable for producing industrial SiGe NWs biosensor in the future.
authors.forename: Yi-Ming
authors.initials: YM
authors.lastname: Chen
authors.forename: Tai-Yuan
authors.initials: TY
authors.lastname: Chang
authors.forename: Chiung-Hui
authors.initials: CH
authors.lastname: Lai
authors.forename: Kow-Ming
authors.initials: KM
authors.lastname: Chang
authors.forename: Chu-Feng
authors.initials: CF
authors.lastname: Chen
authors.forename: Yi-Lung
authors.initials: YL
authors.lastname: Lai
authors.forename: Allen Jong-Woei
authors.initials: AJ
authors.lastname: Whang
authors.forename: Hui-Lung
authors.initials: HL
authors.lastname: Lai
authors.forename: Terng-Ren
authors.initials: TR
authors.lastname: Hsu
mesh_terms: D015374:Biosensing Techniques; D005857:Germanium / Q000737:chemistry*; D053770:Nanowires / Q000737:chemistry*; D058626:Plasma Gases / Q000737:chemistry*; D012822:Silicon Dioxide / Q000737:chemistry*
chemical_list: D058626:Plasma Gases; D005857:Germanium; D012822:Silicon Dioxide