title: Giant Electroresistance in Edge Metal-Insulator-Metal Tunnel Junctions Induced by Ferroelectric Fringe Fields.
abstract: An enormous amount of research activities has been devoted to developing new types of non-volatile memory devices as the potential replacements of current flash memory devices. Theoretical device modeling was performed to demonstrate that a huge change of tunnel resistance in an Edge Metal-Insulator-Metal (EMIM) junction of metal crossbar structure can be induced by the modulation of electric fringe field, associated with the polarization reversal of an underlying ferroelectric layer. It is demonstrated that single three-terminal EMIM/Ferroelectric structure could form an active memory cell without any additional selection devices. This new structure can open up a way of fabricating all-thin-film-based, high-density, high-speed, and low-power non-volatile memory devices that are stackable to realize 3D memory architecture.
authors.affiliation: Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
authors.forename: Sungchul
authors.initials: S
authors.lastname: Jung
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
authors.forename: Youngeun
authors.initials: Y
authors.lastname: Jeon
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
authors.forename: Hanbyul
authors.initials: H
authors.lastname: Jin
authors.affiliation: Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
authors.forename: Jung-Yong
authors.initials: JY
authors.lastname: Lee
authors.affiliation: Department of Physics, Hallym University, Chuncheon Gangwondo 24252, Republic of Korea.
authors.forename: Jae-Hyeon
authors.initials: JH
authors.lastname: Ko
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
authors.forename: Nam
authors.initials: N
authors.lastname: Kim
authors.affiliation: Korea Research Institute of Standards and Science, Daejeon 34113, Republic of Korea.
authors.forename: Daejin
authors.initials: D
authors.lastname: Eom
authors.affiliation: Department of Physics, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.|School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea.
authors.forename: Kibog
authors.initials: K
authors.lastname: Park