title: GaN Epitaxial Layer Grown with Conductive Al(x)Ga(1-x)N Buffer Layer on SiC Substrate Using Metal Organic Chemical Vapor Deposition.
abstract: This study investigated GaN epitaxial layer growth with a conductive Al(x)Ga(1-x)N buffer layer on n-type 4H-SiC by high-temperature metalorganic chemical vapor deposition (HT-MOCVD). The Al composition of the Al(x)Ga(1-x)N buffer was varied from 0% to 100%. In terms of the crystal quality of the GaN layer, 79% Al was the optimal composition of the Al(x)Ga(1-x)N buffer layer in our experiment. A vertical conductive structure was fabricated to measure the current voltage (I-V) characteristics as a function of Al composition, and the I-V curves showed that the resistance increased with increasing Al concentration of the Al(x)Ga(1-x)N buffer layer.
authors.forename: Byeongchan
authors.initials: B
authors.lastname: So
authors.forename: Kyungbae
authors.initials: K
authors.lastname: Lee
authors.forename: Kyungjae
authors.initials: K
authors.lastname: Lee
authors.forename: Cheon
authors.initials: C
authors.lastname: Heo
authors.forename: Jaedo
authors.initials: J
authors.lastname: Pyeon
authors.forename: Kwangse
authors.initials: K
authors.lastname: Ko
authors.forename: Jongjin
authors.initials: J
authors.lastname: Jang
authors.forename: Okhyun
authors.initials: O
authors.lastname: Nam