title: Transition of Carrier Transport Behaviors with Temperature in Phosphorus-Doped Si Nanocrystals/SiO2 Multilayers.
abstract: High-conductive phosphorus-doped Si nanocrystals/SiO2(nc-Si/SiO2) multilayers are obtained, and the formation of Si nanocrystals with the average crystal size of 6 nm is confirmed by high-resolution transmission electron microscopy and Raman spectra. The temperature-dependent carrier transport behaviors of the nc-Si/SiO2 films are systematically studied by which we find the shift of Fermi level on account of the changing P doping concentration. By controlling the P doping concentration in the films, the room temperature conductivity can be enhanced by seven orders of magnitude than the un-doped sample, reaching values up to 110 S/cm for heavily doped sample. The changes from Mott variable-range hopping process to thermally activation conduction process with the temperature are identified and discussed.
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Mingqing
authors.identifier: http://orcid.org/0000-0002-5236-4901
authors.initials: M
authors.lastname: Qian
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Shan
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Ji
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Dongke
authors.initials: D
authors.lastname: Li
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China. junxu@nju.edu.cn.
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Hankou Road 22, Nanjing City, Jiangsu Province, 210093, China.
authors.forename: Kunji
authors.initials: K
authors.lastname: Chen
keywords: Carrier transport; Phosphorus-doped; Si nanocrystals/SiO2 multilayers