title: Interfacial Layer Control by Dry Cleaning Technology for Polycrystalline and Single Crystalline Silicon Growth.
abstract: Native oxide removal prior to poly-Si contact and epitaxial growth of Si is the most critical technology to ensure process and device performances of poly-Si plugs and selective epitaxial growth (SEG) layers for DRAM, flash memory, and logic device. Recently, dry cleaning process for interfacial oxide removal has attracted a world-wide attention due to its superior passivation properties to conventional wet cleaning processes. In this study, we investigated the surface states of Si substrate during and after dry cleaning process, and the role of atomic elements including fluorine and hydrogen on the properties of subsequent deposited silicon layer using SIMS, XPS, and TEM analysis. The controlling of residual fluorine on the Si surface after dry cleaning is a key factor for clean interface. The mechanism of native oxide re-growth caused by residual fluorine after dry cleaning is proposed based on analytical results.
authors.forename: Dong-Hyun
authors.initials: DH
authors.lastname: Im
authors.lastname: Kong-Soo Lee
authors.forename: Yoongoo
authors.initials: Y
authors.lastname: Kang
authors.forename: Myoungho
authors.initials: M
authors.lastname: Jeong
authors.forename: Kwang Wuk
authors.initials: KW
authors.lastname: Park
authors.forename: Soon-Gun
authors.initials: SG
authors.lastname: Lee
authors.forename: Jin-Won
authors.initials: JW
authors.lastname: Ma
authors.forename: Youngseok
authors.initials: Y
authors.lastname: Kim
authors.forename: Bonghyun
authors.initials: B
authors.lastname: Kim
authors.forename: Ki-Vin
authors.initials: KV
authors.lastname: Im
authors.forename: Hanjin
authors.initials: H
authors.lastname: Lim
authors.forename: Jeong Yong
authors.initials: JY
authors.lastname: Lee