title: Improvement of Pre-Annealed Cu(In, Ga)Se2 Absorbers for High Efficiency.
abstract: We used a DC-sputtering method to deposit the precursor (Cu3Ga/In) onto Mo with 1 um thick/soda-lime glass (SLG). We moved it onto a graphite crucible for the pre-annealing process, and the pressure of the process tube was about 10 torr without Ar gas flow. The crucible in quartz tube was heated by halogen lamp to 250 degrees C for 30 min, and then raised to 550 degrees C for 10 min under a selenium atmosphere. To complete the solar cells, a buffer layer of 50 nm CdS was then deposited by chemical bath deposition (CBD), followed by a double layer (high resistivity/low resistivity) of RF sputtered i-ZnO/Al-ZnO thin films. The Al front contacts were deposited by thermal evaporator.
authors.forename: Sung-Min
authors.initials: SM
authors.lastname: Youn
authors.forename: Jin-Hyeok
authors.initials: JH
authors.lastname: Kim
authors.forename: Chaehwan
authors.initials: C
authors.lastname: Jeong