title: Defect visualization of Cu(InGa)(SeS)2 thin films using DLTS measurement.
abstract: Defect depth profiles of Cu (In1-x,Gax)(Se1-ySy)2 (CIGSS) were measured as functions of pulse width and voltage via deep-level transient spectroscopy (DLTS). Four defects were observed, i.e., electron traps of ~0.2 eV at 140 K (E1 trap) and 0.47 eV at 300 K (E2 trap) and hole traps of ~0.1 eV at 100 K (H1 trap) and ~0.4 eV at 250 K (H2 trap). The open circuit voltage (VOC) deteriorated when the trap densities of E2 were increased. The energy band diagrams of CIGSS were also obtained using Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), and DLTS data. These results showed that the valence band was lowered at higher S content. In addition, it was found that the E2 defect influenced the VOC and could be interpreted as an extended defect. Defect depth profile images provided clear insight into the identification of defect state and density as a function of depth around the space charge region.
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.|College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746, Korea.
authors.forename: Sung
authors.initials: S
authors.lastname: Heo
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: JaeGwan
authors.initials: J
authors.lastname: Chung
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Hyung-Ik
authors.initials: HI
authors.lastname: Lee
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Junho
authors.initials: J
authors.lastname: Lee
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Jong-Bong
authors.initials: JB
authors.lastname: Park
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Eunae
authors.initials: E
authors.lastname: Cho
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: KiHong
authors.initials: K
authors.lastname: Kim
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Seong Heon
authors.initials: SH
authors.lastname: Kim
authors.affiliation: Analytical Engineering Group, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do, 443-803, Korea.
authors.forename: Gyeong Su
authors.initials: GS
authors.lastname: Park
authors.affiliation: PV Development Team, Energy Solution Business Division, Samsung SDI, 467, Beonyeong-ro, Cheonan-si, Chungcheongnam-do 331-330, Korea.
authors.forename: Dongho
authors.initials: D
authors.lastname: Lee
authors.affiliation: PV Development Team, Energy Solution Business Division, Samsung SDI, 467, Beonyeong-ro, Cheonan-si, Chungcheongnam-do 331-330, Korea.
authors.forename: Jaehan
authors.initials: J
authors.lastname: Lee
authors.affiliation: PV Development Team, Energy Solution Business Division, Samsung SDI, 467, Beonyeong-ro, Cheonan-si, Chungcheongnam-do 331-330, Korea.
authors.forename: Junggyu
authors.initials: J
authors.lastname: Nam
authors.affiliation: Department of Physics, College of Science and Technology, Kunsan National University, Kunsan, 54150, Korea.
authors.forename: JungYup
authors.initials: J
authors.lastname: Yang
authors.affiliation: Department of Physics, Dongguk University, 100-715, Korea.
authors.forename: Dongwha
authors.initials: D
authors.lastname: Lee
authors.affiliation: Department of Physics, Dongguk University, 100-715, Korea.
authors.forename: Hoon Young
authors.initials: HY
authors.lastname: Cho
authors.affiliation: Department of Physics, Chungbuk National University, Cheongju, 28644, Korea.
authors.forename: Hee Jae
authors.initials: HJ
authors.lastname: Kang
authors.affiliation: College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746, Korea.
authors.forename: Pyung-Ho
authors.initials: PH
authors.lastname: Choi
authors.affiliation: College of Information and Communication Engineering, Sungkyunkwan University, Cheoncheon-dong 300, Jangan-gu, Suwon 440-746, Korea.
authors.forename: Byoung-Deog
authors.initials: BD
authors.lastname: Choi