title: Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.
abstract: Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Li Qiang
authors.initials: LQ
authors.lastname: Zhu
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Chang Jin
authors.initials: CJ
authors.lastname: Wan
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Ping Qi
authors.initials: PQ
authors.lastname: Gao
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Yang Hui
authors.initials: YH
authors.lastname: Liu
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xiao
authors.affiliation: Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences , Ningbo 315201, People's Republic of China.
authors.forename: Ji Chun
authors.initials: JC
authors.lastname: Ye
authors.affiliation: School of Electronic Science & Engineering, Nanjing University , Nanjing 210093, Jiangsu, People's Republic of China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wan
keywords: artificial synapses; electric double layer (EDL); flexible Si membrane; proton gating; spiking logic