title: Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching.
abstract: Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (∼10(12) inch(-2)). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Seungho
authors.initials: S
authors.lastname: Cho
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Chao
authors.initials: C
authors.lastname: Yun
authors.affiliation: Department of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, Cambridge CB3 0FA, UK.
authors.forename: Stefan
authors.initials: S
authors.lastname: Tappertzhofen
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Ahmed
authors.initials: A
authors.lastname: Kursumovic
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Shinbuhm
authors.initials: S
authors.lastname: Lee
authors.affiliation: Sandia National Laboratory, Albuquerque, New Mexico 87185, USA.
authors.forename: Ping
authors.initials: P
authors.lastname: Lu
authors.affiliation: Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA.
authors.forename: Quanxi
authors.initials: Q
authors.lastname: Jia
authors.affiliation: Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA.
authors.forename: Meng
authors.initials: M
authors.lastname: Fan
authors.affiliation: Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA.
authors.forename: Jie
authors.initials: J
authors.lastname: Jian
authors.affiliation: Department of Electrical and Computer Engineering, Texas A&M University, College Station, Texas 77843, USA.|School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA.
authors.forename: Haiyan
authors.identifier: 0000-0002-7397-1209
authors.initials: H
authors.lastname: Wang
authors.affiliation: Department of Engineering, University of Cambridge, 9 J.J. Thomson Avenue, Cambridge CB3 0FA, UK.
authors.forename: Stephan
authors.identifier: 0000-0001-6375-1459
authors.initials: S
authors.lastname: Hofmann
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Judith L
authors.initials: JL
authors.lastname: MacManus-Driscoll