title: Performance of AlGaN/GaN Nanowire Omega-Shaped-Gate Fin-Shaped Field-Effect Transistor.
abstract: The AlGaN/GaN nanowire omega-shaped-gate FinFET have been successfully fabricated demonstrating much improved performance compared to conventional AlGaN/GaN MISHFET. The AlGaN/GaN omega-shaped-gate FinFET exhibited the remarkable on-state performances, such as maximum drain current of 1.1 A/mm, low on-resistance, and low current collapse compared to that of the conventional device structure. In addition, the excellent off-state performances were measured: low off-state leakage current as low as -10(-10) mA, the theoretical SS value of -62 mV/dec, and high I(ON)/I(OFF) ratio (-10(9)). Improved dc performances were obtained for omega-shaped-gate structure due to the fully depletion of the active fin body and perfectly separation of the depleted fin from the underlying thick GaN buffer layer. Furthermore, the additional reason for the enhanced device performance of the proposed device is the improved gate controllability compared to the conventional MISHFET. The proposed nano-structure device is very promising candidate for the steep switching device applications.
authors.forename: Dong-Gi
authors.initials: DG
authors.lastname: Lee
authors.forename: V
authors.initials: V
authors.lastname: Sindhuri
authors.forename: Young-Woo
authors.initials: YW
authors.lastname: Jo
authors.forename: Dong-Hyeok
authors.initials: DH
authors.lastname: Son
authors.forename: Hee-Sung
authors.initials: HS
authors.lastname: Kang
authors.forename: Jae-Hong
authors.initials: JH
authors.lastname: Lee
authors.forename: Jae-Hoon
authors.initials: JH
authors.lastname: Lee
authors.forename: Sorin
authors.initials: S
authors.lastname: Cristoloveanu
authors.forename: Ki-Sik
authors.initials: KS
authors.lastname: Im
authors.forename: Jung-Hee
authors.initials: JH
authors.lastname: Lee