title: Two-Step Growth of Epitaxial InP Layers by Metal Organic Chemical Vapor Deposition.
abstract: In this study, we report experimental results on the epitaxial growth of InP layer on GaAs (001) substrate by using MOCVD. We have systematically controlled nucleation steps in order to obtain InP epitaxial layers with high crystallinity quality. The controlling parameters were flow ratio of V/IIIsources and thicknesses of nucleation layer for nucleation steps. We successfully improved the surface roughness and crystallinity of IIP epitaxial layers on GaAs substrates.
authors.forename: Young-Dae
authors.initials: YD
authors.lastname: Cho
authors.forename: In-Geun
authors.initials: IG
authors.lastname: Lee
authors.forename: Sun-Wook
authors.initials: SW
authors.lastname: Kim
authors.forename: Dong-Hwan
authors.initials: DH
authors.lastname: Jun
authors.forename: In-Hye
authors.initials: IH
authors.lastname: Choi
authors.forename: Hyuk-Min
authors.initials: HM
authors.lastname: Kwon
authors.forename: Chan-Soo
authors.initials: CS
authors.lastname: Shin
authors.forename: Kyung-Ho
authors.initials: KH
authors.lastname: Park
authors.forename: Won-Kyu
authors.initials: WK
authors.lastname: Park
authors.forename: Dae-Hyun
authors.initials: DH
authors.lastname: Kim
authors.forename: Dae-Hong
authors.initials: DH
authors.lastname: Ko