title: Large area and deep sub-wavelength interference lithography employing odd surface plasmon modes.
abstract: In this paper, large area and deep sub-wavelength interference patterns are realized experimentally by using odd surface plasmon modes in the metal/insulator/metal structure. Theoretical investigation shows that the odd modes possesses much higher transversal wave vector and great inhibition of tangential electric field components, facilitating surface plasmon interference fringes with high resolution and contrast in the measure of electric field intensity. Interference resist patterns with 45 nm (∼λ/8) half-pitch, 50 nm depth, and area size up to 20 mm × 20 mm were obtained by using 20 nm Al/50 nm photo resist/50 nm Al films with greatly reduced surface roughness and 180 nm pitch exciting grating fabricated with conventional laser interference lithography. Much deeper resolution down to 19.5 nm is also feasible by decreasing the thickness of PR. Considering that no requirement of expensive EBL or FIB tools are employed, it provides a cost-effective way for large area and nano-scale fabrication.
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Liqin
authors.initials: L
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Yunfei
authors.initials: Y
authors.lastname: Luo
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Zeyu
authors.initials: Z
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Guohan
authors.initials: G
authors.lastname: Gao
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Zeng
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Changtao
authors.initials: C
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Optical Technologies on Nano-Fabrication and Micro-Engineering, Institute of Optics and Electronics, Chinese Academy of Science, P.O. Box 350, Chengdu 610209, China.
authors.forename: Xiangang
authors.initials: X
authors.lastname: Luo