title: Field-induced dielectric response saturation in o-TaS3.
abstract: We investigated dependence of the dielectric properties on temperature and electric field below 50 K along the chain direction of o-TaS3. With external electric field increase, two threshold features could be identified. For electric fields somewhat larger than the lower threshold [Formula: see text], the dielectric constant starts to decrease whereas the conductivity increases due to the tunnelling of solitons. For higher external electric field we observe a saturation of dielectric response and analyze that the possible reasons may be related to the polarization behavior of charged solitons. With a decrease in temperature, the effect of external field on the dielectric response of the system weakens gradually and at 13 K it diminishes due to soliton freezing.
authors.affiliation: School of Materials Science and Engineering, Tianjin University of Technology, Tianjin 300384, People's Republic of China. Condensed Matter Physics and Materials Science Department, Brookhaven National Laboratory, Upton, NY 11973, USA. Key Laboratory of Display Materials and Photoelectric Devices (Tianjin University of Technology), Ministry of Education, Tianjin 300384, People's Republic of China.
authors.forename: Yongchang
authors.initials: Y
authors.lastname: Ma
authors.forename: Cuimin
authors.initials: C
authors.lastname: Lu
authors.forename: Xuewei
authors.initials: X
authors.lastname: Wang
authors.forename: Xueli
authors.initials: X
authors.lastname: Du
authors.forename: Lijun
authors.initials: L
authors.lastname: Li
authors.forename: Cedomir
authors.initials: C
authors.lastname: Petrovic