title: Optical Relaxation Time Enhancement in Graphene-Passivated Metal Films.
abstract: Due to the small skin depth in metals at optical frequencies, their plasmonic response is strongly dictated by their surface properties. Copper (Cu) is one of the standard materials of choice for plasmonic applications, because of its high conductivity and CMOS compatibility. However, being a chemically active material, it gets easily oxidized when left in ambient environment, causing an inevitable degradation in its plasmonic resonance. Here, for the first time, we report a strong enhancement in the optical relaxation time in Cu by direct growth of few-layer graphene that is shown to act as an excellent passivation layer protecting Cu surface from any deterioration. Spectroscopic ellipsometry measurements reveal a 40-50% reduction in the total scattering rate in Cu itself, which is attributed to an improvement in its surface properties. We also study the impact of graphene quality and show that high quality graphene leads to an even larger improvement in electron scattering rate. These findings are expected to provide a big push towards graphene-protected Cu plasmonics.
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States.|Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States.
authors.forename: Sunny
authors.initials: S
authors.lastname: Chugh
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States.|Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States.
authors.forename: Ruchit
authors.initials: R
authors.lastname: Mehta
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States.
authors.forename: Mengren
authors.initials: M
authors.lastname: Man
authors.affiliation: School of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47907, United States.|Birck Nanotechnology Center, Purdue University, West Lafayette, IN 47907, United States.
authors.forename: Zhihong
authors.initials: Z
authors.lastname: Chen