title: Growth, morphology, structure and characterization of L-histidinium dihydrogen arsenate orthoarsenic acid single crystal.
abstract: L-Histidinium dihydrogen arsenate orthoarsenic acid (LHAS) crystals were grown by the slow evaporation method. Single-crystal X-ray diffraction confirms monoclinic structure. The growth rates of various planes of LHAS crystals were estimated by morphological study. Hirshfeld surface and fingerprint plots were analyzed to investigate the intermolecular interactions at 0.002 a.u. present in the crystal structure. The functional groups and phase behavior of the compound are studied by FTIR spectroscopy and differential scanning calorimetry (DSC). A ferroelectric to paraelectric phase transition at 307 K was observed in dielectric studies. The piezoelectric charge coefficients of the grown crystal were found to be 2 pC/N. The values of coercive field (Ec), remnant polarization (Pr) and spontaneous polarization (Ps) in the hysteresis loop are found to be 5.236 kV cm(-1), 0.654 µC cm(-2) and 2.841 µC cm(-2), respectively. Piezoelectricity and ferroelectricity are reported for the first time in LHAS crystals. The mechanical strength was confirmed from microhardness study and void volume. Due to the low value of the dielectric constant, and good piezoelectric and ferroelectric properties, LHAS crystals can be used in microelectronics, sensors and advanced electronic devices.
authors.affiliation: Crystal Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India.
authors.forename: Nidhi
authors.initials: N
authors.lastname: Tyagi
authors.affiliation: Department of Electronics, SGTB Khalsa College, University of Delhi, Delhi 110007, India.
authors.forename: Nidhi
authors.initials: N
authors.lastname: Sinha
authors.affiliation: Crystal Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India.
authors.forename: Harsh
authors.initials: H
authors.lastname: Yadav
authors.affiliation: Crystal Laboratory, Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India.
authors.forename: Binay
authors.initials: B
authors.lastname: Kumar
mesh_terms: D001149:Arsenates / Q000737:chemistry*; D003460:Crystallization / Q000379:methods; D018360:Crystallography, X-Ray / Q000379:methods; D004553:Electric Conductivity; D006244:Hardness; D006639:Histidine / Q000031:analogs & derivatives*; D008958:Models, Molecular; D044367:Phase Transition; D017550:Spectroscopy, Fourier Transform Infrared
chemical_list: D001149:Arsenates; D006639:Histidine
keywords: Hirshfeld surface; dielectric properties; ferroelectric properties; morphology; piezoelectricity