title: Piezophototronic Effect in Single-Atomic-Layer MoS2for Strain-Gated Flexible Optoelectronics.
abstract: Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at the metal-MoS2interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
authors.forename: Wenzhuo
authors.initials: W
authors.lastname: Wu
authors.affiliation: Department of Electrical Engineering, Columbia University, New York, NY, 10027, USA.
authors.forename: Lei
authors.initials: L
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA.
authors.forename: Ruomeng
authors.initials: R
authors.lastname: Yu
authors.affiliation: National Renewable Energy Laboratory (NREL), Golden, CO, 80401, USA.
authors.forename: Yuanyue
authors.initials: Y
authors.lastname: Liu
authors.affiliation: National Renewable Energy Laboratory (NREL), Golden, CO, 80401, USA.
authors.forename: Su-Huai
authors.initials: SH
authors.lastname: Wei
authors.affiliation: Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
authors.forename: James
authors.initials: J
authors.lastname: Hone
authors.affiliation: School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA, 30332-0245, USA. zhong.wang@mse.gatech.edu.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083, Beijing, China. zhong.wang@mse.gatech.edu.
authors.forename: Zhong Lin
authors.initials: ZL
authors.lastname: Wang
keywords: adaptive optoelectronics; monolayer MoS2; piezophototronic effect