title: Flexible Nanoporous WO3-x Nonvolatile Memory Device.
abstract: Flexible resistive random access memory (RRAM) devices have attracted great interest for future nonvolatile memories. However, making active layer films at high temperature can be a hindrance to RRAM device fabrication on flexible substrates. Here, we introduced a flexible nanoporous (NP) WO3-x RRAM device using anodic treatment in a room-temperature process. The flexible NP WO3-x RRAM device showed bipolar switching characteristics and a high ION/IOFF ratio of ∼10(5). The device also showed stable retention time over 5 × 10(5) s, outstanding cell-to-cell uniformity, and bending endurance over 10(3) cycles when measured in both the flat and the maximum bending conditions.
authors.forename: Yongsung
authors.initials: Y
authors.lastname: Ji
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
authors.forename: Seoung-Ki
authors.initials: SK
authors.lastname: Lee
authors.forename: Gedeng
authors.initials: G
authors.lastname: Ruan
authors.affiliation: Soft Innovative Materials Research Center, Institute of Advanced Composite Materials, Korea Institute of Science and Technology , Joellabuk-do 565-905, Republic of Korea.
authors.forename: Tae-Wook
authors.initials: TW
authors.lastname: Kim
authors.forename: Huilong
authors.initials: H
authors.lastname: Fei
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea.
authors.forename: Seung-Hoon
authors.initials: SH
authors.lastname: Lee
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology , Gwangju 500-712, Republic of Korea.
authors.forename: Dong-Yu
authors.initials: DY
authors.lastname: Kim
authors.forename: Jongwon
authors.initials: J
authors.lastname: Yoon
authors.forename: James M
authors.initials: JM
authors.lastname: Tour
keywords: WO3−x memory; flexible memory; nanoporous; resistive random access memory