title: Light absorption enhancement in Ge nanomembrane and its optoelectronic application.
abstract: In this study, the light absorption property of Ge nanomembrane (Ge NM), which incorporates hydrogen (H), in near-infrared (NIR) wavelength range was analyzed. Due to the presence of a large amount of structural defects, the light absorption coefficient of the Ge layer becomes much higher (10 times) than that of bulk Ge in the wavelength range of 1000 ~1600 nm. Increased light absorption was further measured from released Ge NM that has H incorporation in comparison to that of bulk Ge, proving the enhanced light absorption coefficient of H incorporated Ge. Finally, metal-semiconductor-metal (MSM) photodetectors were demonstrated using the H incorporated Ge on GeOI.
authors.forename: Munho
authors.initials: M
authors.lastname: Kim
authors.forename: Shih-Chia
authors.initials: SC
authors.lastname: Liu
authors.forename: Tong June
authors.initials: TJ
authors.lastname: Kim
authors.forename: Jaeseong
authors.initials: J
authors.lastname: Lee
authors.forename: Jung-Hun
authors.initials: JH
authors.lastname: Seo
authors.forename: Weidong
authors.initials: W
authors.lastname: Zhou
authors.forename: Zhenqiang
authors.initials: Z
authors.lastname: Ma