title: Thermal Effects and Small Signal Modulation of 1.3-μm InAs/GaAs Self-Assembled Quantum-Dot Lasers.
abstract: We investigate the influence of thermal effects on the high-speed performance of 1.3-μm InAs/GaAs quantum-dot lasers in a wide temperature range (5-50°C). Ridge waveguide devices with 1.1 mm cavity length exhibit small signal modulation bandwidths of 7.51 GHz at 5°C and 3.98 GHz at 50°C. Temperature-dependent K-factor, differential gain, and gain compression factor are studied. While the intrinsic damping-limited modulation bandwidth is as high as 23 GHz, the actual modulation bandwidth is limited by carrier thermalization under continuous wave operation. Saturation of the resonance frequency was found to be the result of thermal reduction in the differential gain, which may originate from carrier thermalization.
authors: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Republic of Singapore. zhao0097@ntu.edu.sg.
authors: H X
authors: HX
authors: Zhao
authors: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Republic of Singapore.
authors: S F
authors: SF
authors: Yoon
authors: Photonics Group, Edward S. Rogers Sr. Department of Electrical and Computer Engineering, University of Toronto, 27 King's College Circle, Toronto, ON, Canada.
authors: C Z
authors: CZ
authors: Tong
authors: Institute of Solid State Physics, Technical University of Berlin, Hardenbergstr. 36, 10623, Berlin, Germany.
authors: C Y
authors: CY
authors: Liu
authors: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Republic of Singapore.
authors: R
authors: R
authors: Wang
authors: School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore, 639798, Republic of Singapore.
authors: Q
authors: Q
authors: Cao
keywords: Modulation; Molecular beam epitaxy; Quantum-dots; Semiconductor lasers; Temperature