title: n-Type Doping of Vapor-Liquid-Solid Grown GaAs Nanowires.
abstract: In this letter, n-type doping of GaAs nanowires grown by metal-organic vapor phase epitaxy in the vapor-liquid-solid growth mode on (111)B GaAs substrates is reported. A low growth temperature of 400°C is adjusted in order to exclude shell growth. The impact of doping precursors on the morphology of GaAs nanowires was investigated. Tetraethyl tin as doping precursor enables heavily n-type doped GaAs nanowires in a relatively small process window while no doping effect could be found for ditertiarybutylsilane. Electrical measurements carried out on single nanowires reveal an axially non-uniform doping profile. Within a number of wires from the same run, the donor concentrations ND of GaAs nanowires are found to vary from 7 × 10(17) cm(-3) to 2 × 10(18) cm(-3). The n-type conductivity is proven by the transfer characteristics of fabricated nanowire metal-insulator-semiconductor field-effect transistor devices.
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany. christoph.gutsche@uni-due.de.
authors: Christoph
authors: C
authors: Gutsche
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany.
authors: Andrey
authors: A
authors: Lysov
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany.
authors: Ingo
authors: I
authors: Regolin
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany.
authors: Kai
authors: K
authors: Blekker
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany.
authors: Werner
authors: W
authors: Prost
authors: Solid State Electronics Department and CeNIDE, University of Duisburg-Essen, Lotharstr. 55, 47048, Duisburg, Germany.
authors: Franz-Josef
authors: FJ
authors: Tegude
keywords: Doping; Gallium arsenide; MOVPE; Nanowires; Optoelectronics; Silicon; Tin