title: Lévy Flights due to Anisotropic Disorder in Graphene.
abstract: We study transport properties of graphene with anisotropically distributed on-site impurities (adatoms) that are randomly placed on every third line drawn along carbon bonds. We show that stripe states characterized by strongly suppressed backscattering are formed in this model in the direction of the lines. The system reveals Lévy-flight transport in the stripe direction such that the corresponding conductivity increases as the square root of the system length. Thus, adding this type of disorder to clean graphene near the Dirac point strongly enhances the conductivity, which is in stark contrast with a fully random distribution of on-site impurities, which leads to Anderson localization. The effect is demonstrated both by numerical simulations using the Kwant code and by an analytical theory based on the self-consistent T-matrix approximation.
authors: Radboud University, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands.
authors: S
authors: S
authors: Gattenlöhner
authors: Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.|A. F. Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia.|Institut für Theorie der Kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany.
authors: I V
authors: IV
authors: Gornyi
authors: L. D. Landau Institute for Theoretical Physics RAS, 119334 Moscow, Russia.|Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany.
authors: P M
authors: PM
authors: Ostrovsky
authors: Institut für Theoretische Physik und Astrophysik, Universität Würzburg, 97074 Würzburg, Germany.
authors: B
authors: B
authors: Trauzettel
authors: Institut für Nanotechnologie, Karlsruhe Institute of Technology, 76021 Karlsruhe, Germany.|Institut für Theorie der Kondensierten Materie, Karlsruhe Institute of Technology, 76128 Karlsruhe, Germany.|L. D. Landau Institute for Theoretical Physics RAS, 119334 Moscow, Russia.|Petersburg Nuclear Physics Institute,188300 St. Petersburg, Russia.
authors: A D
authors: AD
authors: Mirlin
authors: Radboud University, Institute for Molecules and Materials, NL-6525 AJ Nijmegen, The Netherlands.
authors: M
authors: M
authors: Titov