title: Fabrication of Multilayer Borophene on Insulator Structure.
abstract: The X-ray photoelectron spectroscopy spectra indicate the peak of BB bonds, implying that the elemental boron structure might be formed after the process. The multilayer β-borophene is directly observed by transmission electron microscopy (TEM) and the lattice parameters are valid. The middle SiNx layer also can be identified in TEM image. Furthermore, the 1.61 eV bandgap of the multilayer β-borophene is announced in this study.
authors: Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, R. O. C.. b91520016@yahoo.com.tw.
authors: Hsu-Sheng
authors: HS
authors: Tsai
authors: Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.
authors: Ching-Hung
authors: CH
authors: Hsiao
authors: Department of Material Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30013, R. O. C.
authors: Yu-Pin
authors: YP
authors: Lin
authors: Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.
authors: Chia-Wei
authors: CW
authors: Chen
authors: Department of Material Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.
authors: Hao
authors: H
authors: Ouyang
authors: Institute of Nuclear Engineering and Science, National Tsing Hua University, No. 101, Section 2, Kuang-Fu Road, Hsinchu, Taiwan, 30013, R. O. C.. jhliang@ess.nthu.edu.tw.|Department of Engineering and System Science, National Tsing Hua University, Hsinchu, Taiwan, 30013, R. O. C.. jhliang@ess.nthu.edu.tw.
authors: Jenq-Horng
authors: JH
authors: Liang
keywords: borophene; ion implantation; plasma