title: Recent Advances in Doping of Molybdenum Disulfide: Industrial Applications and Future Prospects.
abstract: Owing to their excellent physical properties, atomically thin layers of molybdenum disulfide (MoS2) have recently attracted much attention due to their nonzero-gap property, exceptionally high electrical conductivity, good thermal stability, and excellent mechanical strength, etc. MoS2-based devices exhibit great potential for applications in optoelectronics and energy harvesting. Here, a comprehensive review of various doping strategies is presented, including wet doping and dry doping of atomically crystalline MoS2thin layers, and the progress made so far for their doping-based prospective applications is also discussed. Finally, several significant research issues for the prospects of doped-MoS2in industry, as a guide for 2D material community, are also provided.
authors: SKKU Advanced Institute of Nano Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea.
authors: Viet Phuong
authors: VP
authors: Pham
authors: SKKU Advanced Institute of Nano Technology (SAINT), School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, Gyeonggi-do, 440-746, Republic of Korea. gyyeom@skku.edu.
authors: Geun Young
authors: GY
authors: Yeom
keywords: MoS2; dry doping; industrial applications; possible element doping; wet doping