title: Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours.
abstract: We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions.
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr and Department of Materials Science and Engineering and Inter-university Semiconductor Research Centre, Seoul National University, 151-744 Seoul, Republic of Korea.
authors: Hyungkwang
authors: H
authors: Lim
authors: Nanoelektronik, Technische Fakultät, Christian-Albrechts-Universität zu Kiel, Kiel 24143, Germany.
authors: Rohit
authors: R
authors: Soni
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr and Department of Materials Science and Engineering and Inter-university Semiconductor Research Centre, Seoul National University, 151-744 Seoul, Republic of Korea.
authors: Dohun
authors: D
authors: Kim
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr and Department of Materials Science and Engineering and Inter-university Semiconductor Research Centre, Seoul National University, 151-744 Seoul, Republic of Korea.
authors: Guhyun
authors: G
authors: Kim
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr and Department of Nanomaterials, Korea University of Science and Technology, Daejeon 305-333, Republic of Korea.
authors: Vladimir
authors: V
authors: Kornijcuk
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr.
authors: Inho
authors: I
authors: Kim
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr.
authors: Jong-Keuk
authors: JK
authors: Park
authors: Department of Materials Science and Engineering and Inter-university Semiconductor Research Centre, Seoul National University, 151-744 Seoul, Republic of Korea.
authors: Cheol Seong
authors: CS
authors: Hwang
authors: Center for Electronic Materials, Korea Institute of Science and Technology, Hwarangno 14-gil 5, Seongbuk-gu, Seoul 02792, Republic of Korea. dsjeong@kist.re.kr and Department of Nanomaterials, Korea University of Science and Technology, Daejeon 305-333, Republic of Korea.
authors: Doo Seok
authors: DS
authors: Jeong