title: Energy Bandgap and Edge States in an Epitaxially Grown Graphene/h-BN Heterostructure.
abstract: Securing a semiconducting bandgap is essential for applying graphene layers in switching devices. Theoretical studies have suggested a created bulk bandgap in a graphene layer by introducing an asymmetry between the A and B sub-lattice sites. A recent transport measurement demonstrated the presence of a bandgap in a graphene layer where the asymmetry was introduced by placing a graphene layer on a hexagonal boron nitride (h-BN) substrate. Similar bandgap has been observed in graphene layers on metal substrates by local probe measurements; however, this phenomenon has not been observed in graphene layers on a near-insulating substrate. Here, we present bulk bandgap-like features in a graphene layer epitaxially grown on an h-BN substrate using scanning tunneling spectroscopy. We observed edge states at zigzag edges, edge resonances at armchair edges, and bandgap-like features in the bulk.
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Beomyong
authors: B
authors: Hwang
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Jeongwoon
authors: J
authors: Hwang
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Jong Keon
authors: JK
authors: Yoon
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Sungjun
authors: S
authors: Lim
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Sungmin
authors: S
authors: Kim
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Minjun
authors: M
authors: Lee
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Jeong Hoon
authors: JH
authors: Kwon
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Hongwoo
authors: H
authors: Baek
authors: Department of Physics, Sejong University, Seoul 143-747, Korea.
authors: Dongchul
authors: D
authors: Sung
authors: Department of Physics, Sejong University, Seoul 143-747, Korea.
authors: Gunn
authors: G
authors: Kim
authors: Department of Physics, Sejong University, Seoul 143-747, Korea.
authors: Suklyun
authors: S
authors: Hong
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Jisoon
authors: J
authors: Ihm
authors: Center for Nanoscale Science and Technology, National Institute of Standards Technology, Gaithersburg, MD 20899, USA.
authors: Joseph A
authors: JA
authors: Stroscio
authors: Department of Physics, Seoul National University, Seoul 151-747, Korea.
authors: Young
authors: Y
authors: Kuk