title: Reduced interfacial recombination in dye-sensitized solar cells assisted with NiO:Eu(3+),Tb(3+) coated TiO2 film.
abstract: Eu(3+),Tb(3+) doped and undoped NiO films were deposited on TiO2 by a sol-gel spin-coating method as the photoanodes of dye sensitized solar cells (DSSCs). A comparative study with different structures including TiO2, TiO2/NiO and TiO2/NiO:Eu(3+),Tb(3+) as the photoanodes was carried out to illustrate the photovoltaic performance of solar cells. NiO could enhance the performance of DSSCs ascribed to acting as a barrier for the charge recombination from the fluorine doped tin oxide (FTO) to electrolyte and forming a p-n junction (NiO/TiO2). Moreover, Eu(3+), Tb(3+) co-doped NiO could accelerate the electron transfer at TiO2/dye/electrolyte interface, which further benefited the performance of solar cells. The solar cells assembled with the photoelectrodes consisting of NiO:Eu(3+),Tb(3+) and TiO2 exhibited short-circuit current density (JSC) of 17.4 mA cm(-2), open-circuit voltage (VOC) of 780 mV and conversion efficiency of 8.8%, which were higher than that with TiO2/NiO and pure TiO2. The mechanisms of the influence of NiO and NiO:Eu(3+),Tb(3+) on the photovoltaic performance of DSSCs were discussed.
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Nannan
authors: N
authors: Yao
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Jinzhao
authors: J
authors: Huang
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Ke
authors: K
authors: Fu
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Xiaolong
authors: X
authors: Deng
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Meng
authors: M
authors: Ding
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Shouwei
authors: S
authors: Zhang
authors: School of Physics and Technology, University of Jinan, Jinan 250022, Shandong Province, P. R. China.
authors: Xijin
authors: X
authors: Xu
authors: Key Laboratory for Photonic and Electric Bandgap Materials, Ministry of Education, Harbin Normal University, Harbin, 150025, Heilongjiang Province, P. R. China.
authors: Lin
authors: L
authors: Li