title: Tunneling-injection in vertical quasi-2D heterojunctions enabled efficient and adjustable optoelectronic conversion.
abstract: The advent of 2D materials integration has enabled novel heterojunctions where carrier transport proceeds thrsough different ultrathin layers. We here demonstrate the potential of such heterojunctions on a graphene/dielectric/semiconductor vertical stack that combines several enabling features for optoelectronic devices. Efficient and stable light emission was achieved through carrier tunneling from the graphene injector into prominent states of a luminescent material. Graphene's unique properties enable fine control of the band alignment in the heterojunction. This advantage was used to produce vertical tunneling-injection light-emitting transistors (VtiLET) where gating allows adjustment of the light emission intensity independent of applied bias. This device was shown to simultaneously act as a light detecting transistor with a linear and gate tunable sensitivity. The presented development of an electronically controllable multifunctional light emitter, light detector and transistor open up a new route for future optoelectronics.
authors: Department of Physics, National Taiwan University, Taipei, 10617 Taiwan.
authors: Wei-Chun
authors: WC
authors: Tan
authors: Department of Physics, National Taiwan University, Taipei, 10617 Taiwan.
authors: Chia-Wei
authors: CW
authors: Chiang
authors: Department of Material Science and Engineering, National Cheng Kung University, Tainan, 70101 Taiwan.
authors: Mario
authors: M
authors: Hofmann
authors: Department of Physics, National Taiwan University, Taipei, 10617 Taiwan.
authors: Yang-Fang
authors: YF
authors: Chen