title: Low-bias current 10 Gbit/s direct modulation of GaInAsP/InP membrane DFB laser on silicon.
abstract: Low-power consumption directly-modulated lasers are a key device for on-chip optical interconnection. We fabricated a GaInAsP/InP membrane DFB laser that exhibited a low-threshold current of 0.21 mA and single-mode operation with a sub-mode suppression ratio of 47 dB at a bias current of 2 mA. A high modulation efficiency of 11 GHz/mA1/2was obtained. A 10 Gbit/s direct modulation using a non-return-to-zero 231-1 pseudo-random bit sequence signal was performed with a bias current of 1 mA, which is the lowest bias current ever reported for direct modulation of a DFB laser. A bit-error rate of 10-9was successfully achieved.
authors: Daisuke
authors: D
authors: Inoue
authors: Takuo
authors: T
authors: Hiratani
authors: Kai
authors: K
authors: Fukuda
authors: Takahiro
authors: T
authors: Tomiyasu
authors: Tomohiro
authors: T
authors: Amemiya
authors: Nobuhiko
authors: N
authors: Nishiyama
authors: Shigehisa
authors: S
authors: Arai