title: Development of Solution-Processed ZnO Nanorod Arrays Based Photodetectors and the Improvement of UV Photoresponse via AZO Seed Layers.
abstract: Designing a rational structure and developing an efficient fabrication technique for bottom-up devices offer a promising opportunity for achieving high-performance devices. In this work, we studied how Al-doped ZnO (AZO) seed layer films influence the morphology and optical and electrical properties for ZnO aligned nanorod arrays (NRs) and then the performance of ZnO NRs based ultraviolet photodetectors (UV PDs) with Au/ZnO NRs Schottky junctions and p-CuSCN/n-ZnO NRs heterojunctions. The PD with AZO thin film with 0.5 at. % Al doping (named as AZO (0.5%)) exhibited more excellent photoresponse properties than that with pristine ZnO and AZO (1%) thin films. This phenomenon can be ascribed to the good light transmission of the AZO layer, increased density of the NRs, and improved crystallinity of ZnO NRs. The PDs based on CuSCN/ZnO NRs heterojunctions showed good rectification characteristics in the dark and self-powered UV photoresponse properties with excellent stability and reproducibility under low-intensity illumination conditions. A large responsivity located at 365 nm of 22.5 mA/W was achieved for the PD with AZO (0.5%) thin film without applied bias. The internal electric field originated from p-CuSCN/n-ZnO NRs heterojunctions can separate photogenerated carriers in ZnO NRs and drift toward the corresponding electrode.
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Yuzhu
authors: Y
authors: Zhang
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Jianping
authors: J
authors: Xu
authors: School of Science, Tianjin University of Technology and Education , Tianjin 300222, China.
authors: Shaobo
authors: S
authors: Shi
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Yanyan
authors: Y
authors: Gao
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Chang
authors: C
authors: Wang
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Xiaosong
authors: X
authors: Zhang
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Shougen
authors: S
authors: Yin
authors: Institute of Material Physics, Key Laboratory of Display Materials and Photoelectric Devices, Ministry of Education, and Tianjin Key Laboratory for Photoelectric Materials and Devices, Tianjin University of Technology , Tianjin 300384, China.
authors: Lan
authors: L
authors: Li
keywords: AZO films; Schottky junctions; ZnO nanorods; heterojunctions; self-powered photodetector