title: GaAs nanowires with oxidation-proof arsenic capping for the growth of an epitaxial shell.
abstract: We propose an arsenic-capping/decapping method, allowing the growth of an epitaxial shell around the GaAs nanowire (NW) core which is exposed to an ambient atmosphere, and without the introduction of impurities. Self-catalyzed GaAs NW arrays were firstly grown on Si(111) substrates by solid-source molecular beam epitaxy. Aiming for protecting the active surface of the GaAs NW core, the arsenic-capping/decapping method has been applied. To validate the effect of this method, different core/shell NWs have been fabricated. Analyses highlight the benefit of the As capping-decapping method for further epitaxial shell growth: an epitaxial shell with a smooth surface is achieved in the case of As-capped-decapped GaAs NWs, comparable to the in situ grown GaAs/AlGaAs NWs. This As capping method opens a way for the epitaxial growth of heterogeneous material shells such as functional oxides using different reactors.
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: X
authors: X
authors: Guan
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: J
authors: J
authors: Becdelievre
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: A
authors: A
authors: Benali
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: C
authors: C
authors: Botella
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: G
authors: G
authors: Grenet
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: P
authors: P
authors: Regreny
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, INSA de Lyon, 7 avenue Jean Capelle, F-69621 Villeurbanne, France. jose.penuelas@ec-lyon.fr.
authors: N
authors: N
authors: Chauvin
authors: Institut Lumière Matière (ILM), UMR5306 Université Lyon 1-CNRS Université de Lyon, 69622 Villeurbanne cedex, France.
authors: N P
authors: NP
authors: Blanchard
authors: Centre Technologique des Microstructures, Université Claude Bernard Lyon1, 5 rue Raphael Dubois-Bâtiment Darwin B, F-69622, Villeurbanne Cedex, France.
authors: X
authors: X
authors: Jaurand
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: G
authors: G
authors: Saint-Girons
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: R
authors: R
authors: Bachelet
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: M
authors: M
authors: Gendry
authors: Université de Lyon, Institut des Nanotechnologies de Lyon - UMR 5270 - CNRS, Ecole Centrale de Lyon, 36 avenue Guy de Collongue, F-69134 Ecully cedex, France.
authors: J
authors: J
authors: Penuelas