title: Anisotropic Confinement, Electronic Coupling and Strain Induced Effects Detected by Valence-Band Anisotropy in Self-Assembled Quantum Dots.
abstract: A method to determine the effects of the geometry and lateral ordering on the electronic properties of an array of one-dimensional self-assembled quantum dots is discussed. A model that takes into account the valence-band anisotropic effective masses and strain effects must be used to describe the behavior of the photoluminescence emission, proposed as a clean tool for the characterization of dot anisotropy and/or inter-dot coupling. Under special growth conditions, such as substrate temperature and Arsenic background, 1D chains of In0.4Ga0.6 As quantum dots were grown by molecular beam epitaxy. Grazing-incidence X-ray diffraction measurements directly evidence the strong strain anisotropy due to the formation of quantum dot chains, probed by polarization-resolved low-temperature photoluminescence. The results are in fair good agreement with the proposed model.
authors: Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil. lvl@df.ufscar.br.|Instituto de Física, Universidade Federal de Uberlândia, Uberlândia, Minas Gerais, 38400-902, Brazil. lvl@df.ufscar.br.
authors: L
authors: L
authors: Villegas-Lelovsky
authors: Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil.|Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors: M D
authors: MD
authors: Teodoro
authors: Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil.
authors: V
authors: V
authors: Lopez-Richard
authors: Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil.|Laboratório Nacional de Luz Síncrotron, Campinas, Brazil.
authors: C
authors: C
authors: Calseverino
authors: Laboratório Nacional de Luz Síncrotron, Campinas, Brazil.
authors: A
authors: A
authors: Malachias
authors: Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.|Instituto de Física de São Carlos, Universidade de São Paulo, São Carlos, SP, 13560-970, Brazil.
authors: E
authors: E
authors: Marega
authors: Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.|Department of Electrical Engineer, University of California, Los Angeles, CA, 90095, USA.
authors: B L
authors: BL
authors: Liang
authors: Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors: Yu I
authors: YI
authors: Mazur
authors: Departamento de Física, Universidade Federal de São Carlos, São Carlos, SP, 13565-905, Brazil.
authors: G E
authors: GE
authors: Marques
authors: Faculty of Physics, Havana University, 10400, Havana, Cuba.
authors: C
authors: C
authors: Trallero-Giner
authors: Arkansas Institute for Nanoscale Materials Science and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors: G J
authors: GJ
authors: Salamo
keywords: Anisotropic effects; Grazing-incidence X-ray diffraction synchrotron; Inter-dot coupling; Linear polarized photoluminescence emission; Molecular beam epitaxy; Optoelectronic; Self-assembled quantum dots