title: Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays.
abstract: Vertical crossbar arrays provide a cost-effective approach for high density three-dimensional (3D) integration of resistive random access memory. However, an individual selector device is not allowed to be integrated with the memory cell separately. The development of V-RRAM has impeded the lack of satisfactory self-selective cells. In this study, we have developed a high performance bilayer self-selective device using HfO2 as the memory switching layer and a mixed ionic and electron conductor as the selective layer. The device exhibits high non-linearity (>10(3)) and ultra-low half-select leakage (<0.1 pA). A four layer vertical crossbar array was successfully demonstrated based on the developed self-selective device. High uniformity, ultra-low leakage, sub-nA operation, self-compliance, and excellent read/write disturbance immunity were achieved. The robust array level performance shows attractive potential for low power and high density 3D data storage applications.
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Qing
authors: Q
authors: Luo
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Xiaoxin
authors: X
authors: Xu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Hongtao
authors: H
authors: Liu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Hangbing
authors: H
authors: Lv
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Tiancheng
authors: T
authors: Gong
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Shibing
authors: S
authors: Long
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Qi
authors: Q
authors: Liu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Haitao
authors: H
authors: Sun
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Writam
authors: W
authors: Banerjee
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Ling
authors: L
authors: Li
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Jianfeng
authors: J
authors: Gao
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Nianduan
authors: N
authors: Lu
authors: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China. lvhangbing@ime.ac.cn liuming@ime.ac.cn and Jiangsu National Synergetic Innovation Center for Advances Materials (SICAM), Nanjing 210009, China.
authors: Ming
authors: M
authors: Liu