title: Resonantly Enhanced Second-Harmonic Generation Using III-V Semiconductor All-Dielectric Metasurfaces.
abstract: Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using gallium arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 10(4) relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ∼2 × 10(-5) with ∼3.4 GW/cm(2) pump intensity. The polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Sheng
authors: S
authors: Liu
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Michael B
authors: MB
authors: Sinclair
authors: Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors: Sina
authors: S
authors: Saravi
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Gordon A
authors: GA
authors: Keeler
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Yuanmu
authors: Y
authors: Yang
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: John
authors: J
authors: Reno
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Gregory M
authors: GM
authors: Peake
authors: Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors: Frank
authors: F
authors: Setzpfandt
authors: Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors: Isabelle
authors: I
authors: Staude
authors: Institute of Applied Physics, Abbe Center of Photonics, Friedrich-Schiller-Universität Jena , Max-Wien-Platz 1, 07743 Jena, Germany.
authors: Thomas
authors: T
authors: Pertsch
authors: Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories, Albuquerque, New Mexico 87185, United States.
authors: Igal
authors: I
authors: Brener
keywords: GaAs; III−V semiconductors; Second-harmonic generation; dielectric metasurfaces; monolithic; resonantly enhanced