title: Laser damage mechanisms in conductive widegap semiconductor films.
abstract: Laser damage mechanisms of two conductive wide-bandgap semiconductor films - indium tin oxide (ITO) and silicon doped GaN (Si:GaN) were studied via microscopy, spectroscopy, photoluminescence (PL), and elemental analysis. Nanosecond laser pulse exposures with a laser photon energy (1.03 eV, 1064 nm) smaller than the conductive films bandgaps were applied and radically different film damage morphologies were produced. The laser damaged ITO film exhibited deterministic features of thermal degradation. In contrast, laser damage in the Si:GaN film resulted in highly localized eruptions originating at interfaces. For ITO, thermally driven damage was related to free carrier absorption and, for GaN, carbon complexes were proposed as potential damage precursors or markers.
authors: Jae-Hyuck
authors: JH
authors: Yoo
authors: Marlon G
authors: MG
authors: Menor
authors: John J
authors: JJ
authors: Adams
authors: Rajesh N
authors: RN
authors: Raman
authors: Jonathan R I
authors: JR
authors: Lee
authors: Tammy Y
authors: TY
authors: Olson
authors: Nan
authors: N
authors: Shen
authors: Joonki
authors: J
authors: Suh
authors: Stavros G
authors: SG
authors: Demos
authors: Jeff
authors: J
authors: Bude
authors: Selim
authors: S
authors: Elhadj