title: Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.
abstract: Diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for InN based devices, yet little is known of the band offsets in InN/diamond system. X-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (VBO) of InN/diamond heterostructure. The value of VBO was determined to be 0.39 ± 0.08 eV and a type-I heterojunction with a conduction band offset (CBO) of 4.42 ± 0.08 eV was obtained. The accurate determination of VBO and CBO is important for the application of III-N alloys based electronic devices.
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China. shikai@semi.ac.cn.
authors: K
authors: K
authors: Shi
authors: Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 Dong Nan Hu Road, 130033, Changchun, People's Republic of China. lidb@ciomp.ac.cn.
authors: D B
authors: DB
authors: Li
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: H P
authors: HP
authors: Song
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: Y
authors: Y
authors: Guo
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: J
authors: J
authors: Wang
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: X Q
authors: XQ
authors: Xu
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: J M
authors: JM
authors: Liu
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: A L
authors: AL
authors: Yang
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: H Y
authors: HY
authors: Wei
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: B
authors: B
authors: Zhang
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: S Y
authors: SY
authors: Yang
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China. xlliu@semi.ac.cn.
authors: X L
authors: XL
authors: Liu
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: Q S
authors: QS
authors: Zhu
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P. O. Box 912, 100083, Beijing, People's Republic of China.
authors: Z G
authors: ZG
authors: Wang
keywords: Conduction band offset; InN/diamond heterojunction; Valence band offset; X-ray photoelectron spectroscopy