title: MoS2 memristor with photoresistive switching.
abstract: A MoS2 nanosphere memristor with lateral gold electrodes was found to show photoresistive switching. The new device can be controlled by the polarization of nanospheres, which causes resistance switching in an electric field in the dark or under white light illumination. The polarization charge allows to change the switching voltage of the photomemristor, providing its multi-level operation. The device, polarized at a voltage 6 V, switches abruptly from a high resistance state (HRSL6) to a low resistance state (LRSL6) with the On/Off resistance ratio of about 10 under white light and smooth in the dark. Analysis of device conductivity in different resistive states indicates that its resistive state could be changed by the modulation of the charge in an electric field in the dark or under light, resulting in the formation/disruption of filaments with high conductivity. A MoS2 photomemristor has great potential as a multifunctional device designed by using cost-effective fabrication techniques.
authors: Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.|Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.
authors: Wei
authors: W
authors: Wang
authors: Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.|Institute of Microelectronics Technology, RAS, Chernogolovka, Moscow district, 142432, Russia.
authors: Gennady N
authors: GN
authors: Panin
authors: Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.
authors: Xiao
authors: X
authors: Fu
authors: Hubei Collaborative Innovation Center for Advanced Organic Chemical Materials, Faculty of Materials Science &Engineering, Hubei University, Wuhan 430062, China.
authors: Lei
authors: L
authors: Zhang
authors: Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.
authors: P
authors: P
authors: Ilanchezhiyan
authors: Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
authors: Vasiliy O
authors: VO
authors: Pelenovich
authors: Key Laboratory of Artificial Micro- and Nano-Materials of Ministry of Education and School of Physics and Technology, Wuhan University, Wuhan 430072, China.
authors: Dejun
authors: D
authors: Fu
authors: Department of Physics, Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 100-715, Republic of Korea.
authors: Tae Won
authors: TW
authors: Kang