title: Contact Resistance Effects in Highly Doped Organic Electrochemical Transistors.
abstract: Injection at the source contact critically determines the behavior of depletion-type organic electrochemical transistors (OETs). The contact resistance of OETs increases exponentially with the gate voltage and strongly influences the modulation of the drain current by the gate voltage over a wide voltage range. A modified standard model accounting contact resistance can explain the particular shape of the transconductance.
authors: Department of Physics, Kent State University, Kent, OH, 44242, USA.
authors: Vikash
authors: V
authors: Kaphle
authors: Department of Physics, Kent State University, Kent, OH, 44242, USA.
authors: Shiyi
authors: S
authors: Liu
authors: Department of Physics, Kent State University, Kent, OH, 44242, USA.
authors: Akram
authors: A
authors: Al-Shadeedi
authors: Department of Physics, Kent State University, Kent, OH, 44242, USA.
authors: Chang-Min
authors: CM
authors: Keum
authors: Department of Physics, Kent State University, Kent, OH, 44242, USA. blussem@kent.edu.
authors: Björn
authors: B
authors: Lüssem
keywords: contact resistance; organic electrochemical transistors; transconductance