title: High luminous efficacy green light-emitting diodes with AlGaN cap layer.
abstract: We demonstrate very high luminous efficacy green light-emitting diodes employing Al0.30Ga0.70N cap layer grown on patterned sapphire substrates by metal organic chemical vapor deposition. The peak external quantum efficiency and luminous efficacies were 44.3% and 239 lm/w, respectively. At 20 mA (20 A/cm2) the light output power was 14.3 mW, the forward voltage was 3.5 V, the emission wavelength was 526.6 nm, and the external quantum efficiency was 30.2%. These results are among the highest reported luminous efficacy values for InGaN based green light-emitting diodes.
authors: Abdullah I
authors: AI
authors: Alhassan
authors: Robert M
authors: RM
authors: Farrell
authors: Burhan
authors: B
authors: Saifaddin
authors: Asad
authors: A
authors: Mughal
authors: Feng
authors: F
authors: Wu
authors: Steven P
authors: SP
authors: DenBaars
authors: Shuji
authors: S
authors: Nakamura
authors: James S
authors: JS
authors: Speck