title: All-inorganic perovskite CsPb(Br/I)3 nanorods for optoelectronic application.
abstract: Halide perovskites have attracted great attention in recent years as promising materials for optoelectronic devices, especially inorganic perovskites like CsPbX3 (X = I, Br, Cl). Herein, CsPb(Br/I)3 nanorods with a photoluminescence (PL) spectrum located at 610 nm have been obtained by a facile hot-injection method, and the UV-vis absorption spectrum further revealed that the bandgap absorption is around 1.98 eV. Furthermore, the photoelectric response of the CsPb(Br/I)3 nanorods showed a relatively short rise-time (0.68 s) and decay-time (0.66 s), and the on/off photocurrent ratio of the CsPb(Br/I)3 nanorod based photodetector was up to 10(3).
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Xiaosheng
authors: X
authors: Tang
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Zhiqiang
authors: Z
authors: Zu
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Haibing
authors: H
authors: Shao
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Wei
authors: W
authors: Hu
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Miao
authors: M
authors: Zhou
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Ming
authors: M
authors: Deng
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Weiwei
authors: W
authors: Chen
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Zhigang
authors: Z
authors: Zang
authors: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China. xstang@cqu.edu.cn.
authors: Tao
authors: T
authors: Zhu
authors: Department of Materials Science & Engineering, National University of Singapore, Singapore.
authors: Junmin
authors: J
authors: Xue