title: Purely electronic mechanism of electrolyte gating of indium tin oxide thin films.
abstract: Epitaxial indium tin oxide films have been grown on both LaAlO3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers a pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.
authors: Brookhaven National Laboratory, Upton NY 11973, USA.
authors: X
authors: X
authors: Leng
authors: Brookhaven National Laboratory, Upton NY 11973, USA.
authors: A T
authors: AT
authors: Bollinger
authors: Brookhaven National Laboratory, Upton NY 11973, USA.|Applied Physics Department, Yale University, New Haven CT 06520, USA.
authors: I
authors: I
authors: Božović