title: Dielectric Relaxation of La-Doped Zirconia Caused by Annealing Ambient.
abstract: La-doped zirconia films, deposited by ALD at 300°C, were found to be amorphous with dielectric constants (k-values) up to 19. A tetragonal or cubic phase was induced by post-deposition annealing (PDA) at 900°C in both nitrogen and air. Higher k-values (~32) were measured following PDA in air, but not after PDA in nitrogen. However, a significant dielectric relaxation was observed in the air-annealed film, and this is attributed to the formation of nano-crystallites. The relaxation behavior was modeled using the Curie-von Schweidler (CS) and Havriliak-Negami (HN) relationships. The k-value of the as-deposited films clearly shows a mixed CS and HN dependence on frequency. The CS dependence vanished after annealing in air, while the HN dependence disappeared after annealing in nitrogen.
authors: Department of Electrical and Electronic Engineering, Xi'an Jiaotong, Liverpool University, 215123, Suzhou, Jiangsu, China. cezhou.zhao@xjtlu.edu.cn.|Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK. cezhou.zhao@xjtlu.edu.cn.
authors: C Z
authors: CZ
authors: Zhao
authors: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK.|Department of Engineering, Materials Science and Engineering, University of Liverpool, Liverpool, L69 3GH, UK.
authors: M
authors: M
authors: Werner
authors: Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK.
authors: S
authors: S
authors: Taylor
authors: Department of Engineering, Materials Science and Engineering, University of Liverpool, Liverpool, L69 3GH, UK.
authors: P R
authors: PR
authors: Chalker
authors: Department of Chemistry, University of Liverpool, Liverpool, L69 3ZD, UK.
authors: A C
authors: AC
authors: Jones
authors: Department of Electrical and Electronic Engineering, Xi'an Jiaotong, Liverpool University, 215123, Suzhou, Jiangsu, China.|Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool, L69 3GJ, UK.
authors: Chun
authors: C
authors: Zhao
keywords: La; La0.35Zr0.65O2; ZrO2