title: Optical Properties of GaSb Nanofibers.
abstract: Amorphous GaSb nanofibers were obtained by ion beam irradiation of bulk GaSb single-crystal wafers, resulting in fibers with diameters of ~20 nm. The Raman spectra and photoluminescence (PL) of the ion irradiation-induced nanofibers before and after annealing were studied. Results show that the Raman intensity of the GaSb LO phonon mode decreased after ion beam irradiation as a result of the formation of the amorphous nanofibers. A new mode is observed at ~155 cm(-1) both from the unannealed and annealed GaSb nanofiber samples related to the A1g mode of Sb-Sb bond vibration. Room temperature PL measurements of the annealed nanofibers present a wide feature band at ~1.4-1.6 eV. The room temperature PL properties of the irradiated samples presents a large blue shift compared to bulk GaSb. Annealed nanofibers and annealed nanofibers with Au nanodots present two different PL peaks (400 and 540 nm), both of which may originate from Ga or O vacancies in GaO. The enhanced PL and new band characteristics in nanostructured GaSb suggest that the nanostructured fibers may have unique applications in optoelectronic devices.
authors: School of Physical Electronics, University of Electronic Science and Technology of China, 610054, Chengdu, China.|Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA.
authors: Xiuli
authors: X
authors: Zhou
authors: Department of Electrical Engineering and Computer Science, University of Michigan, 48109, Ann Arbor, MI, USA.
authors: Wei
authors: W
authors: Guo
authors: Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA.
authors: Alejandro G
authors: AG
authors: Perez-Bergquist
authors: Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA.
authors: Qiangmin
authors: Q
authors: Wei
authors: Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA.
authors: Yanbin
authors: Y
authors: Chen
authors: Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA. kaisun@umich.edu.
authors: Kai
authors: K
authors: Sun
authors: Department of Materials Science and Engineering, University of Michigan, 48109, Ann Arbor, MI, USA. lmwang@umich.edu.|Department of Nuclear Engineering and Radiological Sciences, University of Michigan, 48109, Ann Arbor, MI, USA. lmwang@umich.edu.
authors: Lumin
authors: L
authors: Wang
keywords: GaSb; Ion beam irradiation; Photoluminescence (PL); Raman scattering