title: Electronic properties of embedded graphene: doped amorphous silicon/CVD graphene heterostructures.
abstract: Large-area graphene film is of great interest for a wide spectrum of electronic applications, such as field effect devices, displays, and solar cells, among many others. Here, we fabricated heterostructures composed of graphene (Gr) grown by chemical vapor deposition (CVD) on copper substrate and transferred to SiO2/Si substrates, capped by n‑ or p-type doped amorphous silicon (a-Si:H) deposited by plasma-enhanced chemical vapor deposition. Using Raman scattering we show that despite the mechanical strain induced by the a-Si:H deposition, the structural integrity of the graphene is preserved. Moreover, Hall effect measurements directly on the embedded graphene show that the electronic properties of CVD graphene can be modulated according to the doping type of the a-Si:H as well as its phase i.e. amorphous or nanocrystalline. The sheet resistance varies from 360 Ω sq(-1) to 1260 Ω sq(-1) for the (p)-a-Si:H/Gr (n)-a-Si:H/Gr, respectively. We observed a temperature independent hole mobility of up to 1400 cm(2) V(-1) s(-1) indicating that charge impurity is the principal mechanism limiting the transport in this heterostructure. We have demonstrated that embedding CVD graphene under a-Si:H is a viable route for large scale graphene based solar cells or display applications.
authors: GeePs, CNRS UMR8507, Centralesupelec, Univ Paris-Sud, Sorbonne Universités-UPMC Univ Paris 06, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France.
authors: Hakim
authors: H
authors: Arezki
authors: Mohamed
authors: M
authors: Boutchich
authors: David
authors: D
authors: Alamarguy
authors: Ali
authors: A
authors: Madouri
authors: José
authors: J
authors: Alvarez
authors: Pere Roca I
authors: PR
authors: Cabarrocas
authors: Jean-Paul
authors: JP
authors: Kleider
authors: Fei
authors: F
authors: Yao
authors: Young
authors: Y
authors: Hee Lee