title: Ferroelectric Resistive Switching in High-Density Nanocapacitor Arrays Based on BiFeO3 Ultrathin Films and Ordered Pt Nanoelectrodes.
abstract: Ferroelectric resistive switching (RS), manifested as a switchable ferroelectric diode effect, was observed in well-ordered and high-density nanocapacitor arrays based on continuous BiFeO3 (BFO) ultrathin films and isolated Pt nanonelectrodes. The thickness of BFO films and the lateral dimension of Pt electrodes were aggressively scaled down to <10 nm and ∼60 nm, respectively, representing an ultrahigh ferroelectric memory density of ∼100 Gbit/inch(2). Moreover, the RS behavior in those nanocapacitors showed a large ON/OFF ratio (above 10(3)) and a long retention time of over 6,000 s. Our results not only demonstrate for the first time that the switchable ferroelectric diode effect could be realized in BFO films down to <10 nm in thickness, but also suggest the great potentials of those nanocapacitors for applications in high-density data storage.
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.|Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, China.
authors: Zengxing
authors: Z
authors: Lu
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Zhen
authors: Z
authors: Fan
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Peilian
authors: P
authors: Li
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Hua
authors: H
authors: Fan
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Guo
authors: G
authors: Tian
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Xiao
authors: X
authors: Song
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Zhongwen
authors: Z
authors: Li
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Lina
authors: L
authors: Zhao
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Kangrong
authors: K
authors: Huang
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Fengyuan
authors: F
authors: Zhang
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Zhang
authors: Z
authors: Zhang
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Min
authors: M
authors: Zeng
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors: Xingsen
authors: X
authors: Gao
authors: Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, China.
authors: Jiajun
authors: J
authors: Feng
authors: Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, China.
authors: Jianguo
authors: J
authors: Wan
authors: Institute for Advanced Materials and Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.|Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, China.
authors: Junming
authors: J
authors: Liu
keywords: BiFeO3; Schottky emission; high-density memory; nanocapacitor array; resistive switching; ultrathin film