title: Optimizing Silicon Oxide Embedded Silicon Nanocrystal Inter-particle Distances.
abstract: We demonstrate an analytical method to optimize the stoichiometry and thickness of multilayer silicon oxide films in order to achieve the highest density of non-touching and closely spaced silicon nanocrystals after annealing. The probability of a nanocrystal nearest-neighbor distance within a limited range is calculated using the stoichiometry of the as-deposited film and the crystallinity of the annealed film as input parameters. Multiplying this probability with the nanocrystal density results in the density of non-touching and closely spaced silicon nanocrystals. This method can be used to estimate the best as-deposited stoichiometry in order to achieve optimal nanocrystal density and spacing after a subsequent annealing step.
authors: Photovoltaic Materials and Devices, Delft University of Technology, Mekelweg 4, Delft, 2628 CD, The Netherlands. m.vansebille@tudelft.nl.
authors: Martijn
authors: M
authors: van Sebille
authors: Photovoltaic Materials and Devices, Delft University of Technology, Mekelweg 4, Delft, 2628 CD, The Netherlands.
authors: Jort
authors: J
authors: Allebrandi
authors: Photovoltaic Materials and Devices, Delft University of Technology, Mekelweg 4, Delft, 2628 CD, The Netherlands.
authors: Jim
authors: J
authors: Quik
authors: Photovoltaic Materials and Devices, Delft University of Technology, Mekelweg 4, Delft, 2628 CD, The Netherlands.
authors: René A C M M
authors: RA
authors: van Swaaij
authors: Kavli Institute of Nanoscience, Quantum Nanoscience, Delft University of Technology, Lorentzweg 1, Delft, 2628 CJ, The Netherlands.
authors: Frans D
authors: FD
authors: Tichelaar
authors: Photovoltaic Materials and Devices, Delft University of Technology, Mekelweg 4, Delft, 2628 CD, The Netherlands.
authors: Miro
authors: M
authors: Zeman
keywords: Inter-particle distance; Silicon nanocrystal; Silicon oxide; Spacing; Stoichiometry