title: Low frequency noise in single GaAsSb nanowires with self-induced compositional gradients.
abstract: Due to bandgap tunability, GaAsSb nanowires (NWs) have received a great deal of attention for a variety of optoelectronic device applications. However, electrical and optical properties of GaAsSb are strongly affected by Sb-related defects and scattering from surface states and/or defects, which can limit the performance of GaAsSb NW devices. Thus, in order to utilize the GaAsSb NWs for high performance electronic and optoelectronic devices, it is required to study the material and interface properties (e.g. the interface trap density) in the GaAsSb NW devices. Here, we investigate the low frequency noise in single GaAsSb NWs with self-induced compositional gradients. The current noise spectral density of the GaAsSb NW device showed a typical 1/f noise behavior. The Hooge's noise parameter and the interface trap density of the GaAsSb NW device were found to be ∼2.2 × 10(-2) and ∼2 × 10(12) eV(-1) cm(-2), respectively. By applying low frequency noise measurements, the noise equivalent power, a key figure of merit of photodetectors, was calculated. The observed low frequency noise properties can be useful as guidance for quality and reliability of GaAsSb NW based electronic devices, especially for photodetectors.
authors.affiliation: Department of Electronics and Telecommunications, Norwegian University of Science and Technology (NTNU), NO-7491 Trondheim, Norway.
authors.forename: Junghwan
authors.initials: J
authors.lastname: Huh
authors.forename: Dong-Chul
authors.initials: DC
authors.lastname: Kim
authors.forename: A Mazid
authors.initials: AM
authors.lastname: Munshi
authors.forename: Dasa L
authors.initials: DL
authors.lastname: Dheeraj
authors.forename: Doyoung
authors.initials: D
authors.lastname: Jang
authors.forename: Gyu-Tae
authors.initials: GT
authors.lastname: Kim
authors.forename: Bjørn-Ove
authors.initials: BO
authors.lastname: Fimland
authors.forename: Helge
authors.initials: H
authors.lastname: Weman