title: Plasma-induced highly efficient synthesis of boron doped reduced graphene oxide for supercapacitors.
abstract: In this work, we presented a novel route to synthesize boron doped reduced graphene oxide (rGO) by using the dielectric barrier discharge (DBD) plasma technology under ambient conditions. The doping of boron (1.4 at%) led to a significant improvement in the capacitance of rGO and supercapacitors based on the as-synthesized B-rGO exhibited an outstanding specific capacitance.
authors.affiliation: School of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044, China. lcdong72@cqu.edu.cn.
authors.forename: Shaobo
authors.initials: S
authors.lastname: Li
authors.forename: Zhaofeng
authors.initials: Z
authors.lastname: Wang
authors.forename: Hanmei
authors.initials: H
authors.lastname: Jiang
authors.forename: Limei
authors.initials: L
authors.lastname: Zhang
authors.forename: Jingzheng
authors.initials: J
authors.lastname: Ren
authors.forename: Mingtao
authors.initials: M
authors.lastname: Zheng
authors.forename: Lichun
authors.initials: L
authors.lastname: Dong
authors.forename: Luyi
authors.initials: L
authors.lastname: Sun