title: Inversion channel diamond metal-oxide-semiconductor field-effect transistor with normally off characteristics.
abstract: We fabricated inversion channel diamond metal-oxide-semiconductor field-effect transistors (MOSFETs) with normally off characteristics. At present, Si MOSFETs and insulated gate bipolar transistors (IGBTs) with inversion channels are widely used because of their high controllability of electric power and high tolerance. Although a diamond semiconductor is considered to be a material with a strong potential for application in next-generation power devices, diamond MOSFETs with an inversion channel have not yet been reported. We precisely controlled the MOS interface for diamond by wet annealing and fabricated p-channel and planar-type MOSFETs with phosphorus-doped n-type body on diamond (111) substrate. The gate oxide of Al2O3 was deposited onto the n-type diamond body by atomic layer deposition at 300 °C. The drain current was controlled by the negative gate voltage, indicating that an inversion channel with a p-type character was formed at a high-quality n-type diamond body/Al2O3 interface. The maximum drain current density and the field-effect mobility of a diamond MOSFET with a gate electrode length of 5 μm were 1.6 mA/mm and 8.0 cm(2)/Vs, respectively, at room temperature.
authors.affiliation: Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan.|National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Tsubasa
authors.initials: T
authors.lastname: Matsumoto
authors.affiliation: National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Hiromitsu
authors.initials: H
authors.lastname: Kato
authors.affiliation: Research Laboratories, DENSO CORPORATION, Nisshin, Aichi 470-0111, Japan.
authors.forename: Kazuhiro
authors.initials: K
authors.lastname: Oyama
authors.affiliation: National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Toshiharu
authors.initials: T
authors.lastname: Makino
authors.affiliation: National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Masahiko
authors.initials: M
authors.lastname: Ogura
authors.affiliation: National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Daisuke
authors.initials: D
authors.lastname: Takeuchi
authors.affiliation: Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan.
authors.forename: Takao
authors.initials: T
authors.lastname: Inokuma
authors.affiliation: Graduate School of Natural Science and Technology, Kanazawa University, Kanazawa, Ishikawa 920-1192, Japan.|National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Norio
authors.initials: N
authors.lastname: Tokuda
authors.affiliation: National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568, Japan.
authors.forename: Satoshi
authors.initials: S
authors.lastname: Yamasaki