title: Synthesis of Vertically Standing MoS2 Triangles on SiC.
abstract: Layered material MoS2 has been attracting much attention due to its excellent electronical properties and catalytic property. Here we report the synthesis of vertically standing MoS2 triangles on silicon carbon(SiC), through a rapid sulfidation process. Such edge-terminated films are metastable structures of MoS2, which may find applications in FinFETs and catalytic reactions. We have confirmed the catalytic property in a hydrogen evolution reaction(HER). The Tafel slope is about 54mV/decade.
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Feifei
authors.initials: F
authors.lastname: Lan
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Zhanping
authors.initials: Z
authors.lastname: Lai
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Yongkuan
authors.initials: Y
authors.lastname: Xu
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Hongjuan
authors.initials: H
authors.lastname: Cheng
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Zaien
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Chengjun
authors.initials: C
authors.lastname: Qi
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Jianli
authors.initials: J
authors.lastname: Chen
authors.affiliation: Electronic Material Research Institute of Tianjin, Tianjin 300220, P. R. China.
authors.forename: Song
authors.initials: S
authors.lastname: Zhang