title: Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density.
abstract: Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (10(8)-10(9) cm(-2)), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.|Department of Physics, College of Science, University of Al-Mustansiryah , Baghdad, Iraq.
authors.forename: Ahmed
authors.initials: A
authors.lastname: Al-Haddad
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.|School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
authors.forename: Chengliang
authors.initials: C
authors.lastname: Wang
authors.affiliation: Central Facility of Electron Microscopy, Electron Microscopy Group of Materials Science, University of Ulm , Albert Einstein Allee 11, 89081 Ulm, Germany.
authors.forename: Haoyuan
authors.initials: H
authors.lastname: Qi
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.
authors.forename: Fabian
authors.initials: F
authors.lastname: Grote
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.
authors.forename: Liaoyong
authors.initials: L
authors.lastname: Wen
authors.affiliation: Central Facility of Electron Microscopy, Electron Microscopy Group of Materials Science, University of Ulm , Albert Einstein Allee 11, 89081 Ulm, Germany.
authors.forename: Jörg
authors.initials: J
authors.lastname: Bernhard
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.
authors.forename: Ranjith
authors.initials: R
authors.lastname: Vellacheri
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.|Department of Physics, College of Science, University of Al-Mustansiryah , Baghdad, Iraq.
authors.forename: Samar
authors.initials: S
authors.lastname: Tarish
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.
authors.forename: Ghulam
authors.initials: G
authors.lastname: Nabi
authors.affiliation: Central Facility of Electron Microscopy, Electron Microscopy Group of Materials Science, University of Ulm , Albert Einstein Allee 11, 89081 Ulm, Germany.
authors.forename: Ute
authors.initials: U
authors.lastname: Kaiser
authors.affiliation: Institute of Physics & IMN MacroNano, Ilmenau University of Technology , Ilmenau 98693, Germany.
authors.forename: Yong
authors.initials: Y
authors.lastname: Lei
keywords: anodic aluminum oxide; core−shell; nanostructure array; perfect order; resistive switching memory