title: Epitaxial 2D SnSe2/ 2D WSe2 van der Waals Heterostructures.
abstract: van der Waals heterostructures of 2D semiconductor materials can be used to realize a number of (opto)electronic devices including tunneling field effect devices (TFETs). It is shown in this work that high quality SnSe2/WSe2 vdW heterostructure can be grown by molecular beam epitaxy on AlN(0001)/Si(111) substrates using a Bi2Se3 buffer layer. A valence band offset of 0.8 eV matches the energy gap of SnSe2 in such a way that the VB edge of WSe2 and the CB edge of SnSe2 are lined up, making this materials combination suitable for (nearly) broken gap TFETs.
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.|University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece.
authors.forename: Kleopatra Emmanouil
authors.initials: KE
authors.lastname: Aretouli
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
authors.forename: Dimitra
authors.initials: D
authors.lastname: Tsoutsou
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
authors.forename: Polychronis
authors.initials: P
authors.lastname: Tsipas
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.|National Technical University of Athens , Department of Physics, 15780 Athens, Greece.
authors.forename: Jose
authors.initials: J
authors.lastname: Marquez-Velasco
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.|University of Athens , Department of Physics, Section of Solid State Physics, 15684 Athens, Greece.
authors.forename: Sigiava
authors.initials: S
authors.lastname: Aminalragia Giamini
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
authors.forename: Nicolaos
authors.initials: N
authors.lastname: Kelaidis
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
authors.forename: Vassilis
authors.initials: V
authors.lastname: Psycharis
authors.affiliation: Institute of Nanoscience and Nanotechnology, National Center for Scientific Research "DEMOKRITOS" , 15310, Athens, Greece.
authors.forename: Athanasios
authors.initials: A
authors.lastname: Dimoulas
keywords: 2D semiconductors; SnSe2; WSe2; molecular beam epitaxy; tunneling field effect transistors; van der Waals heterostructures