title: Carbon-based molecular devices: Fano effects controlled by the molecule length and the gate voltage.
abstract: Fano effect is an important quantum phenomenon in mesoscopic systems, which arises from an interference between the localized state and the extended state. Here we observe an obvious Fano effect near the Fermi level in an all-carbon molecular device consisting of an acene molecule sandwiched between two zigzag graphene nanoribbon (ZGNR) electrodes. By increasing the length of the molecule, an extended state gradually evolves into a localized state. With the aid of the nearby extended state, a Fano effect is achieved. Using a gate voltage, we can easily tune the Fano effect induced by the single-transmission channel. When the spin degree of freedom is involved, the all-carbon device can show a half-metallic property with positive or negative 100% spin polarization at the Fermi level under the gate voltage; meanwhile the spin thermoelectric effect can also be enhanced.
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: X F
authors.initials: XF
authors.lastname: Yang
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: Y W
authors.initials: YW
authors.lastname: Kuang
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com and National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China. ysliu@cslg.edu.cn.
authors.forename: Y S
authors.initials: YS
authors.lastname: Liu
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: D B
authors.initials: DB
authors.lastname: Zhang
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: Z G
authors.initials: ZG
authors.lastname: Shao
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: H L
authors.initials: HL
authors.lastname: Yu
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: X K
authors.initials: XK
authors.lastname: Hong
authors.affiliation: College of Physics and Electronic Engineering, Changshu Institute of Technology and Jiangsu Laboratory of Advanced Functional materials, Changshu 215500, China. david01124@163.com.
authors.forename: J F
authors.initials: JF
authors.lastname: Feng
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China. ysliu@cslg.edu.cn.
authors.forename: X S
authors.initials: XS
authors.lastname: Chen
authors.affiliation: College of Physics, Optoelectronics and Energy, Soochow University, Suzhou, Jiangsu 215006, China.
authors.forename: X F
authors.initials: XF
authors.lastname: Wang