title: Analysis of Photoluminescence Thermal Quenching: Guidance for the Design of Highly Effective p-type Doping of Nitrides.
abstract: A contact-free diagnostic technique for examining position of the impurity energy level of p-type dopants in nitride semiconductors was proposed based on photoluminescence thermal quenching. The Mg ionization energy was extracted by the phenomenological rate-equation model we developed. The diagnostic technique and analysis model reported here are priorities for the design of highly effective p-doping of nitrides and could also be used to explain the abnormal and seldom analyzed low characteristic temperature T0 (about 100 K) of thermal quenching in p-type nitrides systems. An In-Mg co-doped GaN system is given as an example to prove the validity of our methods. Furthermore, a hole concentration as high as 1.94 × 10(18) cm(-3) was achieved through In-Mg co-doping, which is nearly one order of magnitude higher than typically obtained in our lab.
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Yi
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Binglei
authors.initials: B
authors.lastname: Fu
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Guodong
authors.initials: G
authors.lastname: Yuan
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Junxi
authors.initials: J
authors.lastname: Wang
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Science,Beijing, 100086, China.|State Key Laboratory of Solid State Lighting, Beijing, 100086, China.
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Electrical and Computer Engineering, The University of North Carolina at Charlotte, 9201 University City Blvd., Charlotte, North Carolina 28223, USA.
authors.forename: Yong
authors.initials: Y
authors.lastname: Zhang