title: Tunable Electrical Performance of Few-Layered Black Phosphorus by Strain.
abstract: Strain engineering shows promising applications in low-dimensional materials. It is demonstrated that the bandgap of few-layered black phosphorus can be effectively reduced by out-of-plane compressive strain, resulting in a significant modulation of the vertical electrical performance of black phosphorus and even inducing a nonlinear current-voltage curve to linear current-voltage curve transition.
authors.affiliation: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors.forename: Hongrong
authors.initials: H
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors.forename: Xiaofei
authors.initials: X
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Yin
authors.affiliation: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China.
authors.forename: Jianxin
authors.initials: J
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of Mechanics and Control of Mechanical Structures, Key Laboratory for Intelligent Nano Materials and Devices of the Ministry of Education and Institute of Nanoscience, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China. wlguo@nuaa.edu.cn.
authors.forename: Wanlin
authors.initials: W
authors.lastname: Guo
keywords: Schottky barrier; atomic force microscopy; bandgap modulation; black phosphorus; strain engineering