title: Ultralow-Noise Atomic-Scale Structures for Quantum Circuitry in Silicon.
abstract: The atomically precise doping of silicon with phosphorus (Si:P) using scanning tunneling microscopy (STM) promises ultimate miniaturization of field effect transistors. The one-dimensional (1D) Si:P nanowires are of particular interest, retaining exceptional conductivity down to the atomic scale, and are predicted as interconnects for a scalable silicon-based quantum computer. Here, we show that ultrathin Si:P nanowires form one of the most-stable electrical conductors, with the phenomenological Hooge parameter of low-frequency noise being as low as ≈10(-8) at 4.2 K, nearly 3 orders of magnitude lower than even carbon-nanotube-based 1D conductors. A in-built isolation from the surface charge fluctuations due to encapsulation of the wires within the epitaxial Si matrix is the dominant cause for the observed suppression of noise. Apart from quantum information technology, our results confirm the promising prospects for precision-doped Si:P structures in atomic-scale circuitry for the 11 nm technology node and beyond.
authors.affiliation: Department of Physics, Indian Institute of Science , Bangalore 560 012, India.
authors.forename: Saquib
authors.initials: S
authors.lastname: Shamim
authors.affiliation: Centre for Quantum Computation and Communication Technology, University of New South Wales , Sydney, NSW 2052, Australia.|School of Physics and Astronomy, Monash University , Melbourne, VIC 3800, Australia.
authors.forename: Bent
authors.initials: B
authors.lastname: Weber
authors.affiliation: Centre for Quantum Computation and Communication Technology, University of New South Wales , Sydney, NSW 2052, Australia.
authors.forename: Daniel W
authors.initials: DW
authors.lastname: Thompson
authors.affiliation: Centre for Quantum Computation and Communication Technology, University of New South Wales , Sydney, NSW 2052, Australia.
authors.forename: Michelle Y
authors.initials: MY
authors.lastname: Simmons
authors.affiliation: Department of Physics, Indian Institute of Science , Bangalore 560 012, India.
authors.forename: Arindam
authors.initials: A
authors.lastname: Ghosh
keywords: 1D wires; STM lithography; low-frequency noise; quantum dots; silicon; δ-Doped Si:P