title: Characterizing Si:P quantum dot qubits with spin resonance techniques.
abstract: Quantum dots patterned by atomically precise placement of phosphorus donors in single crystal silicon have long spin lifetimes, advantages in addressability, large exchange tunability, and are readily available few-electron systems. To be utilized as quantum bits, it is important to non-invasively characterise these donor quantum dots post fabrication and extract the number of bound electron and nuclear spins as well as their locations. Here, we propose a metrology technique based on electron spin resonance (ESR) measurements with the on-chip circuitry already needed for qubit manipulation to obtain atomic scale information about donor quantum dots and their spin configurations. Using atomistic tight-binding technique and Hartree self-consistent field approximation, we show that the ESR transition frequencies are directly related to the number of donors, electrons, and their locations through the electron-nuclear hyperfine interaction.
authors.affiliation: Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA.
authors.forename: Chin-Yi
authors.initials: CY
authors.lastname: Chen
authors.affiliation: Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA.
authors.forename: Gerhard
authors.initials: G
authors.lastname: Klimeck
authors.affiliation: Centre for Quantum Computation and Communication Technology, School of Physics, University of New South Wales, Sydney, NSW 2052, Australia.
authors.forename: Michelle Y
authors.initials: MY
authors.lastname: Simmons
authors.affiliation: Network for Computational Nanotechnology, Purdue University, West Lafayette, IN 47907, USA.
authors.forename: Rajib
authors.initials: R
authors.lastname: Rahman