title: Spin-Hall-Effect-Assisted Electroresistance in Antiferromagnets via 10(5) A/cm(2) dc Current.
abstract: Antiferromagnet (AFM) spintronics with reduced electrical current is greatly expected to process information with high integration and low power consumption. In Pt/FeMn and Ta/FeMn hybrids, we observe significant resistance variation (up to 7% of the total resistance) manipulated by 10(5) A/cm(2) dc current. We have excluded the contribution of isotropic structural effects, and confirmed the critical role of the spin Hall injection from Pt (or Ta) to FeMn. This electrical current-manipulated resistance (i.e. electroresistance) is proposed to be attributed to the spin-Hall-effect-induced spin-orbit torque in FeMn. Similar results have also been detected in plain IrMn films, where the charge current generates spin current via the spin Hall effect with the existence of Ir atoms. All the measurements are free from external magnetic fields and ferromagnets. Our findings present an interesting step towards high-efficiency spintronic devices.
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Jiahao
authors.initials: J
authors.lastname: Han
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Yuyan
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Pan
authors.affiliation: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Cheng
authors.initials: C
authors.lastname: Song