title: The Experimental Demonstration of the Optimized Electrical Probe Memory for Ultra-High Density Recording.
abstract: BACKGROUND
  A theoretical model has been previously proposed to optimize the structure of the electrical probe memory system, whereby the optimal thickness and resistivity of DLC capping layer and TiN under layer are predicted to be 2 nm, 0.01 &amp;#937;m, and 40 nm, 2×10-7 &amp;#937;m,respectively However, there is no experimental evidence to show that such a media stack can be fabricated in reality by the time of writing and few patents regarding this intriguing topic have been reviewed and cited.
  
  
  METHODS
  In order to realize this optimized design experimentally, the thickness dependent resistivity for both DLC and TiN film are assessed, from which it is not possible to obtain a media stack with exactly the same properties as the optimized design. Therefore, the previously proposed architecture is re-optimized using the measured properties values, and the capability of using the modified memory architecture to provide ultra-high density, high data rate, and low energy consumption is demonstrated.
  
  
  RESULTS
  The results show that it is difficult to experimentally attain an electrical probe memory with exactly the same properties values as the optimized counterpart.
  
  
  CONCLUSIONS
  An optimized electrical probe memory structure that includes a DLC capping layer and TiN under layer was previously proposed according to a parametric approach, while the practicality of realizing such a media stack experimentally has not bee investigated. In order to assess its practical feasibility, we first measured the electrical resistivities of DLC and TiN films for different thicknesses. In this case, for the purpose of optimizing the memory system with appropriate, but more physically realistic properties values, we re-designed the architecture using the measured properties, and the modified system is able to provide ultra-high density, large data rate, and low energy consumption.
authors.affiliation: School of Information Engineering, Nanchang Hangkong University, 330063, Nanchang, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Wang
authors.forename: Sidi
authors.initials: S
authors.lastname: Gong
authors.forename: Cihui
authors.initials: C
authors.lastname: Yang
authors.forename: Jing
authors.initials: J
authors.lastname: Wen
keywords: Crystallization; diamond-like carbon; electrical probe memory; resistivity; titanium nitride; ultra-high density