title: High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.
abstract: We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.
authors.forename: Nicholas J D
authors.initials: NJ
authors.lastname: Martinez
authors.forename: Christopher T
authors.initials: CT
authors.lastname: Derose
authors.forename: Reinhard W
authors.initials: RW
authors.lastname: Brock
authors.forename: Andrew L
authors.initials: AL
authors.lastname: Starbuck
authors.forename: Andrew T
authors.initials: AT
authors.lastname: Pomerene
authors.forename: Anthony L
authors.initials: AL
authors.lastname: Lentine
authors.forename: Douglas C
authors.initials: DC
authors.lastname: Trotter
authors.forename: Paul S
authors.initials: PS
authors.lastname: Davids