title: The Role of Annealing Process in Ag-Based BaSnO3 Multilayer Thin Films.
abstract: The BaSnO3/Ag/BaSnO3 multilayer structure was designed and fabricated on a quartz glass by magnetron sputtering, followed by an annealing process at a temperature from 150 to 750 °C in air. In this paper, we investigated the influence of the annealing temperature on the structural, optical, and electrical properties of the multilayers and proposed the mechanisms of conduction and transmittance. The maximum value of the figure of merit of 31.8 × 10(-3) Ω(-1) was achieved for the BaSnO3/Ag/BaSnO3 multilayer thin films annealed at 150 °C, while the average optical transmittance in the visible ranges was >84 %, the resistivity was 5.71 × 10(-5) Ω cm, and the sheet resistance was 5.57 Ω/sq. When annealed at below 600 °C, the values of resistivity and transmittance of the multilayers were within an acceptable range (resistivity <5.0 × 10(-4) Ω cm, transmittance >80 %). The observed property of the multilayer film is suitable for the application of transparent conductive electrodes.
authors.affiliation: School of Electronic Engineering, Dongguan University of Technology, Guangdong, Dongguan, 523808, China. wumy01@163.com.
authors.forename: Muying
authors.initials: M
authors.lastname: Wu
authors.affiliation: School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
authors.forename: Shihui
authors.initials: S
authors.lastname: Yu
authors.affiliation: School of Electronic Engineering, Dongguan University of Technology, Guangdong, Dongguan, 523808, China.
authors.forename: Lin
authors.initials: L
authors.lastname: He
authors.affiliation: School of Electronic Engineering, Dongguan University of Technology, Guangdong, Dongguan, 523808, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Yang
authors.affiliation: School of Physics and Electronics, Henan University, Kaifeng, 475004, China.
authors.forename: Weifeng
authors.initials: W
authors.lastname: Zhang
keywords: BaSnO3; Magnetron sputtering; Multilayer; TCFs; Thin films