title: Highly linear heterogeneous-integrated Mach-Zehnder interferometer modulators on Si.
abstract: In this paper we demonstrate highly linear Mach-Zehnder interferometer modulators utilizing heterogeneous integration on a Si substrate (HS-MZM). A record high dynamic range was achieved for silicon devices, obtained using hybrid III-V/Si phase modulation sections and single drive push-pull operation, demonstrating a spurious free dynamic range (SFDR) of 112 dB∙Hz2/3at 10 GHz, comparable to commercial Lithium Niobate MZMs.
authors.forename: Chong
authors.initials: C
authors.lastname: Zhang
authors.forename: Paul A
authors.initials: PA
authors.lastname: Morton
authors.forename: Jacob B
authors.initials: JB
authors.lastname: Khurgin
authors.forename: Jon D
authors.initials: JD
authors.lastname: Peters
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers