title: Phonon-Enabled Carrier Transport of Localized States at Non-Polar Semiconductor Surfaces: A First-Principles-Based Prediction.
abstract: Electron-phonon coupling can hamper carrier transport either by scattering or by the formation of mass-enhanced polarons. Here, we use time-dependent density functional theory-molecular dynamics simulations to show that phonons can also promote the transport of excited carriers. Using nonpolar InAs (110) surface as an example, we identify phonon-mediated coupling between electronic states close in energy as the origin for the enhanced transport. In particular, the coupling causes localized excitons in the resonant surface states to propagate into bulk with velocities as high as 10(6) cm/s. The theory also predicts temperature enhanced carrier transport, which may be observable in ultrathin nanostructures.
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.|State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.|State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Han
authors.affiliation: Spin Engineering Physics Team, Korea Basic Science Institute (KBSI) , Daejeon 305-806, Republic of Korea.
authors.forename: Junhyeok
authors.initials: J
authors.lastname: Bang
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
authors.forename: Weiyu
authors.initials: W
authors.lastname: Xie
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
authors.forename: Vincent
authors.initials: V
authors.lastname: Meunier
authors.affiliation: Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
authors.forename: ShengBai
authors.initials: S
authors.lastname: Zhang