title: Understanding the growth mechanism of graphene on Ge/Si(001) surfaces.
abstract: The practical difficulties to use graphene in microelectronics and optoelectronics is that the available methods to grow graphene are not easily integrated in the mainstream technologies. A growth method that could overcome at least some of these problems is chemical vapour deposition (CVD) of graphene directly on semiconducting (Si or Ge) substrates. Here we report on the comparison of the CVD and molecular beam epitaxy (MBE) growth of graphene on the technologically relevant Ge(001)/Si(001) substrate from ethene (C2H4) precursor and describe the physical properties of the films as well as we discuss the surface reaction and diffusion processes that may be responsible for the observed behavior. Using nano angle resolved photoemission (nanoARPES) complemented by transport studies and Raman spectroscopy as well as density functional theory (DFT) calculations, we report the direct observation of massless Dirac particles in monolayer graphene, providing a comprehensive mapping of their low-hole doped Dirac electron bands. The micrometric graphene flakes are oriented along two predominant directions rotated by 30° with respect to each other. The growth mode is attributed to the mechanism when small graphene "molecules" nucleate on the Ge(001) surface and it is found that hydrogen plays a significant role in this process.
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: J
authors.initials: J
authors.lastname: Dabrowski
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: G
authors.initials: G
authors.lastname: Lippert
authors.affiliation: Synchrotron SOLEIL, Saint Aubin, BP 48, 91192 Gif-sur-Yvette, France.
authors.forename: J
authors.initials: J
authors.lastname: Avila
authors.affiliation: Institut für Festkörperphysik, Leibniz Universität, Appelstr. 2, 30167 Hannover, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Baringhaus
authors.affiliation: IEMN, Av. Poincaré CS 60069, 59652 Villeneuve d'Ascq Cedex, France.
authors.forename: I
authors.initials: I
authors.lastname: Colambo
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Yu S
authors.initials: YS
authors.lastname: Dedkov
authors.affiliation: Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany.
authors.forename: F
authors.initials: F
authors.lastname: Herziger
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: G
authors.initials: G
authors.lastname: Lupina
authors.affiliation: Institut für Festkörperphysik, TU Berlin, Hardenbergstr. 36, 10623 Berlin, Germany.
authors.forename: J
authors.initials: J
authors.lastname: Maultzsch
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: T
authors.initials: T
authors.lastname: Schaffus
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.|BTU Cottbus-Senftenberg, Konrad Zuse Str. 1, 03046 Cottbus, Germany.
authors.forename: T
authors.initials: T
authors.lastname: Schroeder
authors.affiliation: IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.|BTU Cottbus-Senftenberg, Konrad Zuse Str. 1, 03046 Cottbus, Germany.
authors.forename: M
authors.initials: M
authors.lastname: Kot
authors.affiliation: Institut für Festkörperphysik, Leibniz Universität, Appelstr. 2, 30167 Hannover, Germany.
authors.forename: C
authors.initials: C
authors.lastname: Tegenkamp
authors.affiliation: IEMN, Av. Poincaré CS 60069, 59652 Villeneuve d'Ascq Cedex, France.
authors.forename: D
authors.initials: D
authors.lastname: Vignaud
authors.affiliation: Synchrotron SOLEIL, Saint Aubin, BP 48, 91192 Gif-sur-Yvette, France.
authors.forename: M-C
authors.initials: MC
authors.lastname: Asensio