title: Landau Level Splittings, Phase Transitions, and Nonuniform Charge Distribution in Trilayer Graphene.
abstract: We report on magnetotransport studies of dual-gated, Bernal-stacked trilayer graphene (TLG) encapsulated in boron nitride crystals. We observe a quantum Hall effect staircase which indicates a complete lifting of the 12-fold degeneracy of the zeroth Landau level. As a function of perpendicular electric field, our data exhibit a sequence of phase transitions between all integer quantum Hall states in the filling factor interval -8<ν<0. We develop a theoretical model and argue that, in contrast to monolayer and bilayer graphene, the observed Landau level splittings and quantum Hall phase transitions can be understood within a single-particle picture, but imply the presence of a charge density imbalance between the inner and outer layers of TLG, even at charge neutrality and zero transverse electric field. Our results indicate the importance of a previously unaccounted band structure parameter which, together with a more accurate estimate of the other tight-binding parameters, results in a significantly improved determination of the electronic and Landau level structure of TLG.
authors.affiliation: Departamento de Fisica, Universidade Federal de Minas Gerais, Belo Horizonte, Minas Gerais 31270-901, Brazil.
authors.forename: Leonardo C
authors.initials: LC
authors.lastname: Campos
authors.affiliation: Department of Physics, Faculty of Science, Chulalongkorn University, Patumwan, Bangkok 10330, Thailand.
authors.forename: Thiti
authors.initials: T
authors.lastname: Taychatanapat
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Maksym
authors.initials: M
authors.lastname: Serbyn
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Kawin
authors.initials: K
authors.lastname: Surakitbovorn
authors.affiliation: Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Kenji
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: Department of Theoretical Physics, University of Geneva, 1211 Genève 4, Switzerland.
authors.forename: Dmitry A
authors.initials: DA
authors.lastname: Abanin
authors.affiliation: Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Pablo
authors.initials: P
authors.lastname: Jarillo-Herrero