title: Direct Fabrication of Functional Ultrathin Single-Crystal Nanowires from Quasi-One-Dimensional van der Waals Crystals.
abstract: Micromechanical exfoliation of two-dimensional (2D) van der Waals materials has triggered an explosive interest in 2D material research. The extension of this idea to 1D van der Waals materials, possibly opening a new arena for 1D material research, has not yet been realized. In this paper, we demonstrate that 1D nanowire with sizes as small as six molecular ribbons, can be readily achieved in the Ta2(Pd or Pt)3Se8system by simple micromechanical exfoliation. Exfoliated Ta2Pd3Se8nanowires are n-type semiconductors, whereas isostructural Ta2Pt3Se8nanowires are p-type semiconductors. Both types of nanowires show excellent electrical switching performance as the channel material for a field-effect transistor. Low-temperature transport measurement reveals a defect level inherent to Ta2Pd3Se8nanowires, which enables the observed electrical switching behavior at high temperature (above 140 K). A functional logic gate consisting of both n-type Ta2Pd3Se8and p-type Ta2Pt3Se8field-effect transistors has also been successfully achieved. By taking advantage of the high crystal quality derived from the parent van der Waals bulk compound, our findings about the exfoliated Ta2(Pd or Pt)3Se8nanowires demonstrate a new pathway to access single-crystal 1D nanostructures for the study of their fundamental properties and the exploration of their applications in electronics, optoelectronics, and energy harvesting.
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Xue
authors: X
authors: Liu
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Jinyu
authors: J
authors: Liu
authors: Technological Institute for Superhard and Novel Carbon Materials , Moscow, 142190, Russian Federation.|Moscow Institute of Physics and Technology , Dolgoprudny, 141700, Russian Federation.|National University of Science and Technology "MISiS" , Moscow, 119049, Russian Federation.
authors: Liubov Yu
authors: LY
authors: Antipina
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Jin
authors: J
authors: Hu
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Chunlei
authors: C
authors: Yue
authors: Department of Physics, University of Warwick , Coventry, CV4 7AL, United Kingdom.
authors: Ana M
authors: AM
authors: Sanchez
authors: Technological Institute for Superhard and Novel Carbon Materials , Moscow, 142190, Russian Federation.|National University of Science and Technology "MISiS" , Moscow, 119049, Russian Federation.
authors: Pavel B
authors: PB
authors: Sorokin
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Zhiqiang
authors: Z
authors: Mao
authors: Department of Physics and Engineering Physics, Tulane University , New Orleans, Louisiana 70118, United States.
authors: Jiang
authors: J
authors: Wei
keywords: 1D nanostructure; field-effect transistor; mechanical exfoliation; nanowire; van der Waals material