title: Transfer-Free Fabrication of Graphene Scaffolds on High-k Dielectrics from Metal-Organic Oligomers.
abstract: In situ fabrication of graphene scaffold-ZrO2 nanofilms is achieved by thermal annealing of Zr-based metal-organic oligomers on SiO2 substrates. The structural similarities of the aromatic moieties in the ligand (phenyl-, naphthyl-, anthryl-, and pyrenyl-) compared to graphene play a major role in the ordering of the graphene scaffolds obtained. The depth profiling analysis reveals ultrathin carbon-pure or carbon-rich surfaces of the graphene scaffold-ZrO2 nanofilms. The graphene scaffolds with ∼96.0% transmittance in the visible region and 4.8 nm in thickness can be grown with this non-chemical vapor deposition method. Furthermore, the heterogeneous graphene scaffold-ZrO2 nanofilms show a low sheet resistance of 17.0 kΩ per square, corresponding to electrical conductivity of 3197 S m(-1). The strategy provides a facile method to fabricate graphene scaffolds directly on high-k dielectrics without transferring process, paving the way for its application in fabricating electronic devices.
authors: Department of Chemistry and iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University , Shanghai 200433, P.R. China.
authors: Qingqing
authors: Q
authors: Pang
authors: Rohm and Haas Electronic Materials LLC, Marlborough, Massachusetts 01752, United States.
authors: Deyan
authors: D
authors: Wang
authors: The Dow Chemical (China) Investment Co., Ltd., Shanghai Dow Center, Shanghai 201203, P.R. China.
authors: Xiuyan
authors: X
authors: Wang
authors: The Dow Chemical (China) Investment Co., Ltd., Shanghai Dow Center, Shanghai 201203, P.R. China.
authors: Shaoguang
authors: S
authors: Feng
authors: The Dow Chemical Company, 400 Arcola Road, Collegeville, Pennsylvania 19426, United States.
authors: Michael B
authors: MB
authors: Clark
authors: Department of Chemistry and iChEM (Collaborative Innovation Center of Chemistry for Energy Materials), Fudan University , Shanghai 200433, P.R. China.
authors: Qiaowei
authors: Q
authors: Li
keywords: electronic materials; graphene scaffold; high-k dielectrics; metal−organic oligomer; transfer-free