title: Beyond Molecular Wires: Design Molecular Electronic Functions Based on Dipolar Effect.
abstract: As the semiconductor companies officially abandoned the pursuit of Moore's law, the limitation of silicone-based semiconductor electronic devices is approaching. Single molecular devices are considered as a potential solution to overcome the physical barriers caused by quantum interferences because the intermolecular interactions are mainly through weak van der Waals force between molecular building blocks. In this bottom-up approach, components are built from atoms up, allowing great control over the molecular properties. Moreover, single molecular devices are powerful tools to understand quantum physics, reaction mechanism, and electron and charge transfer processes in organic semiconductors and molecules. So far, a great deal of effort is focused on understanding charge transport through organic single-molecular wires. However, to control charge transport, molecular diodes, switches, transistors, and memories are crucial. Significant progress in these topics has been achieved in the past years. The introduction and advances of scanning tunneling microscope break-junction (STM-BJ) techniques have led to more detailed characterization of new molecular structures. The modern organic chemistry provides an efficient access to a variety of functional moieties in single molecular device. These moieties have the potential to be incorporated in miniature circuits or incorporated as parts in molecular machines, bioelectronics devices, and bottom-up molecular devices. In this Account, we discuss progress mainly made in our lab in designing and characterizing organic single-molecular electronic components beyond molecular wires and with varied functions. We have synthesized and demonstrated molecular diodes with p-n junction structures through various scanning probe microscopy techniques. The assembly of the molecular diodes was achieved by using Langmuir-Blodgett technique or thiol/gold self-assembly chemistry with orthogonal protecting groups. We have thoroughly investigated the rectification effect of different types of p-n junction diodes and its modification by structural and external effects. Through a combination of structural modifications, low temperature study, and quantum mechanical calculations, we showed that the origin of the rectification in these molecules can be attributed to the effect of dipolar field. Further studies on charge transport through transition metal complexes and anchoring group effect supported this conclusion. Most recently, a model system of molecular transistor was synthesized and demonstrated by STM-BJ technique. The gating effect in the molecular wire originated from the tuning of the energy levels via dipolar field and can be turned on/off by dipolar field and chemical stimulation. This is the first example of gated charge transport in molecular electronics.
authors: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors: Wai-Yip
authors: WY
authors: Lo
authors: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors: Na
authors: N
authors: Zhang
authors: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors: Zhengxu
authors: Z
authors: Cai
authors: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors: Lianwei
authors: L
authors: Li
authors: Department of Chemistry and the James Franck Institute, The University of Chicago , 929 E 57th Street, Chicago, Illinois 60637, United States.
authors: Luping
authors: L
authors: Yu