title: Unravelling merging behaviors and electrostatic properties of CVD-grown monolayer MoS2 domains.
abstract: The presence of grain boundaries is inevitable for chemical vapor deposition (CVD)-grown MoS2 domains owing to various merging behaviors, which greatly limits its potential applications in novel electronic and optoelectronic devices. It is therefore of great significance to unravel the merging behaviors of the synthesized polygon shape MoS2 domains. Here we provide systematic investigations of merging behaviors and electrostatic properties of CVD-grown polycrystalline MoS2 crystals by multiple means. Morphological results exhibit various polygon shape features, ascribed to polycrystalline crystals merged with triangle shape MoS2 single crystals. The thickness of triangle and polygon shape MoS2 crystals is identical manifested by Raman intensity and peak position mappings. Three merging behaviors are proposed to illustrate the formation mechanisms of observed various polygon shaped MoS2 crystals. The combined photoemission electron microscopy and kelvin probe force microscopy results reveal that the surface potential of perfect merged crystals is identical, which has an important implication for fabricating MoS2-based devices.
authors: College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People's Republic of China.
authors: Song
authors: S
authors: Hao
authors: College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People's Republic of China.
authors: Bingchu
authors: B
authors: Yang
authors: College of Physics and Electronics, Institute of Super Microstructure and Ultrafast Process in Advanced Materials, Central South University, 605 South Lushan Road, Changsha 410012, People's Republic of China.
authors: Yongli
authors: Y
authors: Gao