title: Enhanced Performance of Quantum Dot-Based Light-Emitting Diodes with Gold Nanoparticle-Doped Hole Injection Layer.
abstract: In this paper, the performance of quantum dot-based light-emitting diodes (QLEDs) comprising ZnCdSe/ZnS core-shell QDs as an emitting layer were enhanced by employing Au-doped poly(3,4-ethylenedioxythiophene)/polystyrene sulfonate (
  PSS) hole injection layer (HIL). By varying the concentration and dimension of Au nanoparticle (NP) dopants in
  PSS, the optimal devices were obtained with ~22-nm-sized Au NP dopant at the concentration with an optical density (OD) of 0.21. Highly bright green QLEDs with a maximum external quantum efficiency (EQE) of 8.2 % and a current efficiency of 29.1 cd/A exhibit 80 % improvement compared with devices without Au NP dopants. The improved performance may be attributed to the significant increase in the hole injection rate as a result of the introduction of Au NPs and the good matching between the resonance frequency of the localized surface plasmon resonance (LSPR) generated by the Au NPs and the emission band of QD layer, as well as the suppressed Auger recombination of QD layer due to the LSPR-induced near-field enhanced radiative recombination rate of excitons. These results are helpful for fabricating high-performance QD-based applications, such as full-color displays and solid-state lighting. 80 % enhancement of efficency of quantum dot-based light-emitting diodes with gold nanoparticle doped hole-injection-layer.
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China.|Collaborative Innovation Center of Nano Functional Materials and Applications, Kaifeng, Henan Province, People's Republic of China.
authors: Fei
authors: F
authors: Chen
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China.
authors: Qingli
authors: Q
authors: Lin
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China. whz@henu.edu.cn.
authors: Hongzhe
authors: H
authors: Wang
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China.
authors: Lei
authors: L
authors: Wang
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China.
authors: Fengjuan
authors: F
authors: Zhang
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China.|Collaborative Innovation Center of Nano Functional Materials and Applications, Kaifeng, Henan Province, People's Republic of China.
authors: Zuliang
authors: Z
authors: Du
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China. shenhuaibin@henu.edu.cn.|Collaborative Innovation Center of Nano Functional Materials and Applications, Kaifeng, Henan Province, People's Republic of China. shenhuaibin@henu.edu.cn.
authors: Huaibin
authors: H
authors: Shen
authors: Key Laboratory for Special Functional Materials, Henan University, Kaifeng, 475004, People's Republic of China. lsli@henu.edu.cn.
authors: Lin Song
authors: LS
authors: Li
keywords: Au nanoparticle; Electroluminescence; Light-emitting diodes; Localized surface plasmon resonance; Quantum dot