title: Surface Properties from Transconductance in Nanoscale Systems.
abstract: Because of the continued scaling of transistor dimensions and incorporation of nanostructured materials into modern electronic and optoelectronic devices, surfaces and interfaces have become a dominant factor dictating material properties and device performance. In this study, we investigate the temperature-dependent electronic transport properties of InAs nanowire field-effect transistors. A point where the nanowire conductance becomes independent of temperature is observed, known as the zero-temperature-coefficient. The distribution of surface states is determined by a spectral analysis of the conductance activation energy and used to develop a carrier transport model that explains the existence and gate voltage dependence of this point. We determine that the position of this point in gate voltage is directly related to the fixed oxide charge on the nanowire surface and demonstrate the utility of this method for studying surface passivations in nanoscale systems by characterizing (NH4)2Sxand H2plasma surface treatments on InAs nanowires.
authors: Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E4, Canada.|Department of Materials Science and Engineering, University of Toronto , 184 College Street, Toronto, Ontario M5S 3E4, Canada.
authors: David
authors: D
authors: Lynall
authors: Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E4, Canada.|Department of Materials Science and Engineering, University of Toronto , 184 College Street, Toronto, Ontario M5S 3E4, Canada.
authors: Kristopher
authors: K
authors: Byrne
authors: Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E4, Canada.|Department of Materials Science and Engineering, University of Toronto , 184 College Street, Toronto, Ontario M5S 3E4, Canada.
authors: Alexander
authors: A
authors: Shik
authors: Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E4, Canada.|Department of Materials Science and Engineering, University of Toronto , 184 College Street, Toronto, Ontario M5S 3E4, Canada.
authors: Selvakumar V
authors: SV
authors: Nair
authors: Centre for Advanced Nanotechnology, University of Toronto , 170 College Street, Toronto, Ontario M5S 3E4, Canada.|Department of Materials Science and Engineering, University of Toronto , 184 College Street, Toronto, Ontario M5S 3E4, Canada.|Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China , Chengdu 610054, China.
authors: Harry E
authors: HE
authors: Ruda
keywords: InAs; field-effect transistors; nanowire; surface passivation; surface states; zero temperature coefficient