title: CdS@SiO2Core-Shell Electroluminescent Nanorod Arrays Based on a Metal-Insulator-Semiconductor Structure.
abstract: Enormous advancement has been achieved in the field of one-dimensional (1D) semiconductor light-emitting devices (LEDs), however, LEDs based on 1D CdS nanostructures have been rarely reported. The fabrication of CdS@SiO2core-shell nanorod array LEDs based on a Au-SiO2-CdS metal-insulator-semiconductor (MIS) structure is presented. The MIS LEDs exhibit strong yellow emission with a low threshold voltage of 2.7 V. Electroluminescence with a broad emission ranging from 450 nm to 800 nm and a shoulder peak at 700 nm is observed, which is related to the defects and surface states of the CdS nanorods. The influence of the SiO2shell thickness on the electroluminescence intensity is systematically investigated. The devices have a high light-emitting spatial resolution of 1.5 μm and maintain an excellent emission property even after shelving at room temperature for at least three months. Moreover, the fabrication process is simple and cost effective and the MIS device could be fabricated on a flexible substrate, which holds great potential for application as a flexible light source. This prototype is expected to open up a new route towards the development of large-scale light-emitting devices with excellent attributes, such as high resolution, low cost, and good stability.
authors: Engineering Research Center for Advanced Polymer Processing Technology, School of Materials Science and Engineering, Zhengzhou University, 100 Science Avenue, Zhengzhou, 450001, P. R. China.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors: Chunfeng
authors: C
authors: Wang
authors: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors: Dengfeng
authors: D
authors: Peng
authors: Engineering Research Center for Advanced Polymer Processing Technology, School of Materials Science and Engineering, Zhengzhou University, 100 Science Avenue, Zhengzhou, 450001, P. R. China.|Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors: Jing
authors: J
authors: Zhao
authors: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors: Rongrong
authors: R
authors: Bao
authors: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China.
authors: Tianfeng
authors: T
authors: Li
authors: Engineering Research Center for Advanced Polymer Processing Technology, School of Materials Science and Engineering, Zhengzhou University, 100 Science Avenue, Zhengzhou, 450001, P. R. China.
authors: Li
authors: L
authors: Tian
authors: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China. ldong@zzu.edu.cn.|School of Physical Engineering, Zhengzhou University, 100 Science Avenue, Zhengzhou, 450001, P. R. China. ldong@zzu.edu.cn.
authors: Lin
authors: L
authors: Dong
authors: Engineering Research Center for Advanced Polymer Processing Technology, School of Materials Science and Engineering, Zhengzhou University, 100 Science Avenue, Zhengzhou, 450001, P. R. China. shency@zzu.edu.cn.
authors: Changyu
authors: C
authors: Shen
authors: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Science, National Center for Nanoscience and Technology (NCNST), Beijing, 100083, P. R. China. cfpan@binn.cas.cn.
authors: Caofeng
authors: C
authors: Pan
keywords: core-shell structures; light-emitting devices; metal-insulator-semiconductors; nanorod arrays; silica