title: High-Conductance Pathways in Ring-Strained Disilanes by Way of Direct σ-Si-Si to Au Coordination.
abstract: A highly conducting electronic contact between a strained disilane and Au is demonstrated through scanning tunneling microscope-based single-molecule measurements. Conformationally locked cis diastereomers of bis(sulfide)-anchor-equipped 1,2-disilaacenaphthenes readily form high-conducting junctions in which the two sulfide anchors bind in a bipodal fashion to one gold electrode, providing enough stability for a stable electrical contact between the Si-Si σ bond and the other electrode.
authors: Department of Chemistry, Columbia University , New York, New York 10027, United States.
authors: Nathaniel T
authors: NT
authors: Kim
authors: Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
authors: Haixing
authors: H
authors: Li
authors: Department of Chemistry, Columbia University , New York, New York 10027, United States.|Department of Applied Physics and Applied Mathematics, Columbia University , New York, New York 10027, United States.
authors: Latha
authors: L
authors: Venkataraman
authors: Department of Chemistry, Columbia University , New York, New York 10027, United States.
authors: James L
authors: JL
authors: Leighton