title: Seed-Assisted Growth of Single-Crystalline Patterned Graphene Domains on Hexagonal Boron Nitride by Chemical Vapor Deposition.
abstract: Vertical heterostructures based on two-dimensional layered materials, such as stacked graphene and hexagonal boron nitride (G/h-BN), have stimulated wide interest in fundamental physics, material sciences and nanoelectronics. To date, it still remains challenging to obtain high quality G/h-BN heterostructures concurrently with controlled nucleation density and thickness uniformity. In this work, with the aid of the well-defined poly(methyl methacrylate) seeds, effective control over the nucleation densities and locations of graphene domains on the predeposited h-BN monolayers was realized, leading to the formation of patterned G/h-BN arrays or continuous films. Detailed spectroscopic and morphological characterizations further confirmed that ∼85.7% of such monolayer graphene domains were of single-crystalline nature with their domain sizes predetermined throughout seed interspacing. Density functional theory calculations suggested that a self-terminated growth mechanism can be applied for the related graphene growth on h-BN/Cu. In turn, as-constructed field-effect transistor arrays based on such synthesized single-crystalline G/h-BN patterning were found to be compatible with fabricating devices with nice and steady performance, hence holding great promise for the development of next-generation graphene-based electronics.
authors: Xiuju
authors: X
authors: Song
authors: Teng
authors: T
authors: Gao
authors: Yufeng
authors: Y
authors: Nie
authors: Institute of Textiles and Clothing, Hong Kong Polytechnic University , Hong Kong 999077, China.
authors: Jianing
authors: J
authors: Zhuang
authors: Jingyu
authors: J
authors: Sun
authors: Donglin
authors: D
authors: Ma
authors: Jianping
authors: J
authors: Shi
authors: Yuanwei
authors: Y
authors: Lin
authors: Institute of Textiles and Clothing, Hong Kong Polytechnic University , Hong Kong 999077, China.
authors: Feng
authors: F
authors: Ding
authors: Yanfeng
authors: Y
authors: Zhang
authors: Zhongfan
authors: Z
authors: Liu
keywords: Graphene and hexagonal boron nitride heterostructures; characterizations; chemical vapor deposition; controllable growth; seed-assisted growth