title: Co-nucleus 1D/2D Heterostructures with Bi2S3 Nanowire and MoS2 Monolayer: One-Step Growth and Defect-Induced Formation Mechanism.
abstract: Heterostructures constructed by low-dimensional (such as 0D, 1D, and 2D) materials have opened up opportunities for exploring interesting physical properties and versatile (opto)electronics. Recently, 2D/2D heterostructures, in particular, atomically thin graphene and transition-metal dichalcogenides, including graphene/MoS2, WSe2/MoS2, and WS2/WSe2, were efficiently prepared (by transfer techniques, chemical vapor deposition (CVD) growth, etc.) and systematically studied. In contrast, investigation of 1D/2D heterostructures was still very challenging and rarely reported, and the understanding of such heterostructures was also not well established. Herein, we demonstrate the one-step growth of a heterostructure on the basis of a 1D-Bi2S3 nanowire and a 2D-MoS2 monolayer through the CVD method. Multimeans were employed, and the results proved the separated growth of a Bi2S3 nanowire and a MoS2 sheet in the heterostructure rather than forming a BixMo1-xSy alloy due to their large lattice mismatch. Defect-induced co-nucleus growth, which was an important growth mode in 1D/2D heterostructures, was also experimentally confirmed and systematically investigated in our research. Such 1D/2D heterostructures were further fabricated and utilized in (opto)electronic devices, such as field-effect transistors and photodetectors, and revealed their potential for multifunctional design in electrical properties. The direct growth of such nanostructures will help us to gain a better comprehension of these specific configurations and allow device functionalities in potential applications.
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Yongtao
authors: Y
authors: Li
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Le
authors: L
authors: Huang
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Bo
authors: B
authors: Li
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Xiaoting
authors: X
authors: Wang
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Ziqi
authors: Z
authors: Zhou
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Jingbo
authors: J
authors: Li
authors: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, People's Republic of China.
authors: Zhongming
authors: Z
authors: Wei
keywords: 1D/2D; Bi2S3; CVD growth; MoS2; heterostructure