title: High-performance ambipolar self-assembled Au/Ag nanowire based vertical quantum dot field effect transistor.
abstract: Most lateral PbSe quantum dot field effect transistors (QD FETs) show a low on current/off current (I on/I off) ratio in charge transport measurements. A new strategy to provide generally better performance is to design PbSe QD FETs with vertical architecture, in which the structure parameters can be tuned flexibly. Here, we fabricated a novel room-temperature operated vertical quantum dot field effect transistor with a channel of 580 nm, where self-assembled Au/Ag nanowires served as source transparent electrodes and PbSe quantum dots as active channels. Through investigating the electrical characterization, the ambipolar device exhibited excellent characteristics with a high I on/I off current ratio of about 1 × 10(5) and a low sub-threshold slope (0.26 V/decade) in the p-type regime. The all-solution processing vertical architecture provides a convenient way for low cost, large-area integration of the device.
authors: Institute of Laser & Opto-Electronics, College of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, People's Republic of China. Key Laboratory of Opto-electronics Information Technology (Tianjin University), Ministry of Education, Tianjin 300072, People's Republic of China.
authors: Xiaoxian
authors: X
authors: Song
authors: Yating
authors: Y
authors: Zhang
authors: Haiting
authors: H
authors: Zhang
authors: Yu
authors: Y
authors: Yu
authors: Mingxuan
authors: M
authors: Cao
authors: Yongli
authors: Y
authors: Che
authors: Jianlong
authors: J
authors: Wang
authors: Haitao
authors: H
authors: Dai
authors: Junbo
authors: J
authors: Yang
authors: Xin
authors: X
authors: Ding
authors: Jianquan
authors: J
authors: Yao