title: Nondestructive Method for Mapping Metal Contact Diffusion in In2O3 Thin-Film Transistors.
abstract: The channel width-to-length ratio is an important transistor parameter for integrated circuit design. Contact diffusion into the channel during fabrication or operation alters the channel width and this important parameter. A novel methodology combining atomic force microscopy and scanning Kelvin probe microscopy (SKPM) with self-consistent modeling is developed for the nondestructive detection of contact diffusion on active devices. Scans of the surface potential are modeled using physically based Technology Computer Aided Design (TCAD) simulations when the transistor terminals are grounded and under biased conditions. The simulations also incorporate the tip geometry to investigate its effect on the measurements due to electrostatic tip-sample interactions. The method is particularly useful for semiconductor- and metal-semiconductor interfaces where the potential contrast resulting from dopant diffusion is below that usually detectable with scanning probe microscopy.
authors: Electronic Systems Design Centre, Swansea University , Swansea SA1 8EN, U.K.
authors: Olga
authors: O
authors: Kryvchenkova
authors: School of Physics and Astronomy, Cardiff University , The Parade, Cardiff CF24 3AA, U.K.
authors: Isam
authors: I
authors: Abdullah
authors: School of Physics and Astronomy, Cardiff University , The Parade, Cardiff CF24 3AA, U.K.
authors: John Emyr
authors: JE
authors: Macdonald
authors: School of Physics and Astronomy, Cardiff University , The Parade, Cardiff CF24 3AA, U.K.
authors: Martin
authors: M
authors: Elliott
authors: Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London , London SW7 2AZ, U.K.
authors: Thomas D
authors: TD
authors: Anthopoulos
authors: Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London , London SW7 2AZ, U.K.
authors: Yen-Hung
authors: YH
authors: Lin
authors: Electronic Systems Design Centre, Swansea University , Swansea SA1 8EN, U.K.
authors: Petar
authors: P
authors: Igić
authors: Electronic Systems Design Centre, Swansea University , Swansea SA1 8EN, U.K.
authors: Karol
authors: K
authors: Kalna
authors: Electronic Systems Design Centre, Swansea University , Swansea SA1 8EN, U.K.
authors: Richard J
authors: RJ
authors: Cobley
keywords: AFM; In2O3; Kelvin probe; metal oxide transistors; solution processing