title: Multibit MoS2Photoelectronic Memory with Ultrahigh Sensitivity.
abstract: A novel multibit MoS2photoelectronic nonvolatile memory device is developed by synergistically combining rational device designs and the efficient transfer of large-area MoS2flakes. The MoS2photoelectronic memory exhibits excellent memory characteristics, including a large programming/erasing current ratio that exceeds 107, multilevel data storage of 3 bits (corresponding to eight levels), performance stability over 200 cycles, and stable data retention over 104s.
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Dain
authors: D
authors: Lee
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.|Department of Physics, Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Euyheon
authors: E
authors: Hwang
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Youngbin
authors: Y
authors: Lee
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Yongsuk
authors: Y
authors: Choi
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Jong Su
authors: JS
authors: Kim
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea.|School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea.
authors: Seungwoo
authors: S
authors: Lee
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, 440-746, Korea. jhcho94@skku.edu.|School of Chemical Engineering, Sungkyunkwan University, Suwon, 440-746, Korea. jhcho94@skku.edu.
authors: Jeong Ho
authors: JH
authors: Cho
keywords: MoS2; memory devices, floating gates; multilevel programs; nonvolatile photoelectronic memory