title: Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics.
abstract: We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.|Resnick Sustainability Institute, California Institute of Technology , Pasadena, California 91125, United States.
authors: Deep
authors: D
authors: Jariwala
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.|Resnick Sustainability Institute, California Institute of Technology , Pasadena, California 91125, United States.|Kavli Nanoscience Institute, California Institute of Technology , Pasadena, California 91125, United States.
authors: Artur R
authors: AR
authors: Davoyan
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.|Joint Center for Artificial Photosynthesis, California Institute of Technology , Pasadena, California 91125, United States.
authors: Giulia
authors: G
authors: Tagliabue
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.|Resnick Sustainability Institute, California Institute of Technology , Pasadena, California 91125, United States.
authors: Michelle C
authors: MC
authors: Sherrott
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.
authors: Joeson
authors: J
authors: Wong
authors: Department of Applied Physics and Materials Science, California Institute of Technology , Pasadena, California 91125, United States.|Resnick Sustainability Institute, California Institute of Technology , Pasadena, California 91125, United States.|Kavli Nanoscience Institute, California Institute of Technology , Pasadena, California 91125, United States.|Joint Center for Artificial Photosynthesis, California Institute of Technology , Pasadena, California 91125, United States.
authors: Harry A
authors: HA
authors: Atwater
keywords: Transition metal dichalcogenides; broadband; heterostructures; light trapping; near-unity absorption; photovoltaics