title: Dual-mode operation of 2D material-base hot electron transistors.
abstract: Vertical hot electron transistors incorporating atomically-thin 2D materials, such as graphene or MoS2, in the base region have been proposed and demonstrated in the development of electronic and optoelectronic applications. To the best of our knowledge, all previous 2D material-base hot electron transistors only considered applying a positive collector-base potential (VCB > 0) as is necessary for the typical unipolar hot-electron transistor behavior. Here we demonstrate a novel functionality, specifically a dual-mode operation, in our 2D material-base hot electron transistors (e.g. with either graphene or MoS2 in the base region) with the application of a negative collector-base potential (VCB < 0). That is, our 2D material-base hot electron transistors can operate in either a hot-electron or a reverse-current dominating mode depending upon the particular polarity of VCB. Furthermore, these devices operate at room temperature and their current gains can be dynamically tuned by varying VCB. We anticipate our multi-functional dual-mode transistors will pave the way towards the realization of novel flexible 2D material-based high-density and low-energy hot-carrier electronic applications.
authors: National Nano Device Laboratories (NDL), Hsinchu 30078, Taiwan.|Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
authors: Yann-Wen
authors: YW
authors: Lan
authors: Space and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, California 92152, United States.
authors: Carlos M
authors: CM
authors: Torres
authors: Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
authors: Xiaodan
authors: X
authors: Zhu
authors: Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
authors: Hussam
authors: H
authors: Qasem
authors: Space and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, California 92152, United States.
authors: James R
authors: JR
authors: Adleman
authors: Space and Naval Warfare (SPAWAR) Systems Center Pacific, San Diego, California 92152, United States.|Nanomedical Diagnostics, Production Division, San Diego, CA 92121, United State.
authors: Mitchell B
authors: MB
authors: Lerner
authors: Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
authors: Shin-Hung
authors: SH
authors: Tsai
authors: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors: Yumeng
authors: Y
authors: Shi
authors: Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
authors: Lain-Jong
authors: LJ
authors: Li
authors: Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung 811, Taiwan.|National Nano Device Laboratories (NDL), National Applied Research Laboratories, Taipei 10622, Taiwan.
authors: Wen-Kuan
authors: WK
authors: Yeh
authors: Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, California 90095, United States.
authors: Kang L
authors: KL
authors: Wang