title: Two-terminal floating-gate memory with van der Waals heterostructures for ultrahigh on/off ratio.
abstract: Concepts of non-volatile memory to replace conventional flash memory have suffered from low material reliability and high off-state current, and the use of a thick, rigid blocking oxide layer in flash memory further restricts vertical scale-up. Here, we report a two-terminal floating gate memory, tunnelling random access memory fabricated by a monolayer MoS2/h-BN/monolayer graphene vertical stack. Our device uses a two-terminal electrode for current flow in the MoS2 channel and simultaneously for charging and discharging the graphene floating gate through the h-BN tunnelling barrier. By effective charge tunnelling through crystalline h-BN layer and storing charges in graphene layer, our memory device demonstrates an ultimately low off-state current of 10(-14) A, leading to ultrahigh on/off ratio over 10(9), about ∼10(3) times higher than other two-terminal memories. Furthermore, the absence of thick, rigid blocking oxides enables high stretchability (>19%) which is useful for soft electronics.
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Quoc An
authors: QA
authors: Vu
authors: Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Yong Seon
authors: YS
authors: Shin
authors: Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Young Rae
authors: YR
authors: Kim
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Van Luan
authors: VL
authors: Nguyen
authors: Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Won Tae
authors: WT
authors: Kang
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Hyun
authors: H
authors: Kim
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Dinh Hoa
authors: DH
authors: Luong
authors: Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Il Min
authors: IM
authors: Lee
authors: Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
authors: Kiyoung
authors: K
authors: Lee
authors: Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
authors: Dong-Su
authors: DS
authors: Ko
authors: Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
authors: Jinseong
authors: J
authors: Heo
authors: Samsung Advanced Institute of Technology, Suwon 16678, Republic of Korea.
authors: Seongjun
authors: S
authors: Park
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Young Hee
authors: 0000-0001-7403-8157
authors: YH
authors: Lee
authors: Department of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea.|Samsung-SKKU Graphene Center (SSGC), Sungkyunkwan University, Suwon 16419, Republic of Korea.
authors: Woo Jong
authors: WJ
authors: Yu