title: Non-Volatile Ferroelectric Switching of Ferromagnetic Resonance in NiFe/PLZT Multiferroic Thin Film Heterostructures.
abstract: Magnetoelectric effect, arising from the interfacial coupling between magnetic and electrical order parameters, has recently emerged as a robust means to electrically manipulate the magnetic properties in multiferroic heterostructures. Challenge remains as finding an energy efficient way to modify the distinct magnetic states in a reliable, reversible, and non-volatile manner. Here we report ferroelectric switching of ferromagnetic resonance in multiferroic bilayers consisting of ultrathin ferromagnetic NiFe and ferroelectric Pb0.92La0.08Zr0.52Ti0.48O3 (PLZT) films, where the magnetic anisotropy of NiFe can be electrically modified by low voltages. Ferromagnetic resonance measurements confirm that the interfacial charge-mediated magnetoelectric effect is dominant in NiFe/PLZT heterostructures. Non-volatile modification of ferromagnetic resonance field is demonstrated by applying voltage pulses. The ferroelectric switching of magnetic anisotropy exhibits extensive applications in energy-efficient electronic devices such as magnetoelectric random access memories, magnetic field sensors, and tunable radio frequency (RF)/microwave devices.
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.|Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA.
authors: Zhongqiang
authors: Z
authors: Hu
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Xinjun
authors: X
authors: Wang
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Tianxiang
authors: T
authors: Nan
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors: Ziyao
authors: Z
authors: Zhou
authors: Energy Systems Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors: Beihai
authors: B
authors: Ma
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Xiaoqin
authors: X
authors: Chen
authors: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA.
authors: John G
authors: JG
authors: Jones
authors: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA.
authors: Brandon M
authors: BM
authors: Howe
authors: Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson Air Force Base, Ohio 45433, USA.
authors: Gail J
authors: GJ
authors: Brown
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Yuan
authors: Y
authors: Gao
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Hwaider
authors: H
authors: Lin
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Zhiguang
authors: Z
authors: Wang
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Rongdi
authors: R
authors: Guo
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Shuiyuan
authors: S
authors: Chen
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Xiaoling
authors: X
authors: Shi
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Wei
authors: W
authors: Shi
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Hongzhi
authors: H
authors: Sun
authors: Department of Chemistry, Northeastern University, Boston, Massachusetts 02115, USA.
authors: David
authors: D
authors: Budil
authors: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education &International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an 710049, China.
authors: Ming
authors: M
authors: Liu
authors: Department of Electrical and Computer Engineering, Northeastern University, Boston, Massachusetts 02115, USA.
authors: Nian X
authors: NX
authors: Sun