title: Hybrid van der Waals p-n Heterojunctions based on SnO and 2D MoS2.
abstract: A p-type oxide/2D hybrid van der Waals p-n heterojunction is demonstrated for the first time between SnO (tin monoxide) (the p-type oxide) and 2D MoS2(molybdenum disulfide), showing an ideality factor of 2 and rectification ratio up to 104. The reported heterojunction is gate-tunable with typical anti-ambipolar transfer characteristics. Surface potential mapping is performed and a current model for such a heterojunction is proposed.
authors: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors: Zhenwei
authors: Z
authors: Wang
authors: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia.
authors: Xin
authors: X
authors: He
authors: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. xixiang.zhang@kaust.edu.sa.
authors: Xi-Xiang
authors: XX
authors: Zhang
authors: Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia. husam.alshareef@kaust.edu.sa.
authors: Husam N
authors: HN
authors: Alshareef
keywords: MoS2; SnO; electrostatic force microscopy; gate-tunable; van der Waals heterojunctions