Optical thermometry based on level anticrossing in silicon carbide.
We report a giant thermal shift of 2.1 MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the indirect observation of the optically detected magnetic resonance in the excited state using the ground state as an ancilla. Alternatively, relative variations of the zero-field splitting for small temperature differences can be detected without application of radiofrequency fields, by simply monitoring the photoluminescence intensity in the vicinity of the level anticrossing. This effect results in an all-optical thermometry technique with temperature sensitivity of 100 mK/Hz(1/2) for a detection volume of approximately 10(-6) mm(3). In contrast, the zero-field splitting in the ground state does not reveal detectable temperature shift. Using these properties, an integrated magnetic field and temperature sensor can be implemented on the same center.
Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.
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AN
Anisimov
Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany.
D
D
Simin
Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.
V A
VA
Soltamov
Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.|St. Petersburg National Research University of Information Technologies, Mechanics and Optics, 197101, St. Petersburg, Russia.
S P
SP
Lebedev
Ioffe Physical-Technical Institute, 194021 St. Petersburg, Russia.
P G
PG
Baranov
Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany.
G V
GV
Astakhov
Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg, Germany.|Bavarian Center for Applied Energy Research (ZAE Bayern), 97074 Würzburg, Germany.
V
V
Dyakonov