First step to investigate nature of electronic states and transport in flower-like MoS2: Combining experimental studies with computational calculations.
In the present paper, the nature of electronic states and transport properties of nanostructured flower-like molybdenum disulphide grown by hydrothermal route has been studied. The band structure, electronic nature of charge, thermodynamics and the limit of phonon scattering through density functional theory (DFT) has also been studied. The band tail states, dynamics of trap states and transport of carriers was investigated through intensive impedance spectroscopy analysis. The direct fingerprint of density and band tail state is analyzed from the capacitance plot as capacitance reflects the capability of a semiconductor to accept or release the charge carriers with a corresponding change in its Fermi potential levels. A recently introduced infrared photo-carrier radiometry and density functional perturbation theory (DFPT) techniques have been used to determine the temperature dependence of carrier mobility in flower type-MoS2. The present study illustrates that a large amount of trapped charges leads to an underestimation of the measured effective mobility and the potential of the material. Thus, a continuous engineering effort is required to improve the quality of fabricated nanostructures for its potential applications.
School of Technology, Pandit Deendayal Petroleum University, Gandhinagar, 382007, India.|Inorganic Chemistry Laboratory, University of Oxford, South Parks Road, Oxford OX1 3QR, United Kingdom.
Kavita
K
Pandey
Department of Electrical Engineering, Incheon National University, Incheon, 406772, Korea.
Pankaj
P
Yadav
Advanced Materials Lab, Department of Applied Physics, S. V. National Institute of Technology, Surat, 395007, India.
Deobrat
D
Singh
Computational Materials and Nanoscience Group, Department of Physics and Electronics, St. Xavier's College, Ahmedabad 380009, India.
Sanjeev K
SK
Gupta
Advanced Materials Lab, Department of Applied Physics, S. V. National Institute of Technology, Surat, 395007, India.
Yogesh
Y
Sonvane
Department of Physics, University J. J. Strossmayer, 31000 Osijek, Croatia.
Igor
I
Lukačević
Department of Electrical Engineering, Incheon National University, Incheon, 406772, Korea.
Joondong
J
Kim
School of Technology, Pandit Deendayal Petroleum University, Gandhinagar, 382007, India.
Manoj
M
Kumar