Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires.
A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm2detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Hezhi
H
Zhang
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Xing
X
Dai
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Nan
N
Guan
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.|Université Grenoble Alpes , Grenoble 38000, France.|"Nanophysique et Semiconducteurs" group, CEA, INAC-SP2M , 17 rue des Martyrs, Grenoble 38000, France.
Agnes
A
Messanvi
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Vladimir
V
Neplokh
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Valerio
V
Piazza
"Nanophysique et Semiconducteurs" group, CEA, INAC-SP2M , 17 rue des Martyrs, Grenoble 38000, France.
Martin
M
Vallo
Université Grenoble Alpes , Grenoble 38000, France.|"Nanophysique et Semiconducteurs" group, CEA, INAC-SP2M , 17 rue des Martyrs, Grenoble 38000, France.
Catherine
C
Bougerol
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
François H
FH
Julien
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.|ITMO University , St. Petersburg 197101, Russia.
Andrey
A
Babichev
Aix Marseille Université, CNRS, Université de Toulon , IM2NP UMR 7334, 13397 Marseille, France.
Nicolas
N
Cavassilas
Aix Marseille Université, CNRS, Université de Toulon , IM2NP UMR 7334, 13397 Marseille, France.
Marc
M
Bescond
Aix Marseille Université, CNRS, Université de Toulon , IM2NP UMR 7334, 13397 Marseille, France.
Fabienne
F
Michelini
LPICM-CNRS, Laboratoire de Physique des Interfaces et Couches Minces, Ecole Polytechnique , Palaiseau 91128, France.
Martin
M
Foldyna
Université Grenoble Alpes , Grenoble 38000, France.|CEA, INAC-SPINTEC , 38000 Grenoble, France.
Eric
E
Gautier
Université Grenoble Alpes , Grenoble 38000, France.|"Nanophysique et Semiconducteurs" group, CEA, INAC-SP2M , 17 rue des Martyrs, Grenoble 38000, France.
Christophe
C
Durand
"Nanophysique et Semiconducteurs" group, CEA, INAC-SP2M , 17 rue des Martyrs, Grenoble 38000, France.
Joël
J
Eymery
Centre de Nanosciences et de Nanotechnologies, UMR9001 CNRS, University Paris Sud, University Paris Saclay , Orsay 91405, France.
Maria
M
Tchernycheva
InGaN; core/shell p−n junction; flexible photodiode; nitride nanowires; self-powered photodetectors