Interstitial Boron-Doped TiO2 Thin Films: The Significant Effect of Boron on TiO2 Coatings Grown by Atmospheric Pressure Chemical Vapor Deposition.
The work presented here describes the preparation of transparent interstitial boron-doped TiO2 thin-films by atmospheric pressure chemical vapor deposition (APCVD). The interstitial boron-doping, on TiO2, proved by X-ray photoelectron spectroscopy (XPS) and X-ray diffraction (XRD), is shown to enhance the crystallinity and significantly improve the photocatalytic activity of the TiO2 films. The synthesis, highly suitable for a reel-to-reel process, has been carried out in one step.
Materials Chemistry Research Centre, Department of Chemistry, University College London , 20 Gordon Street, London WC1H 0AJ, United Kingdom.|Department of Materials Research and Technology, Luxembourg Institute of Science and Technology , 5 Avenue des Hauts-Fourneaux, Esch-sur-Alzette L-4362, Luxembourg.
Miguel
M
Quesada-González
Department of Materials Research and Technology, Luxembourg Institute of Science and Technology , 5 Avenue des Hauts-Fourneaux, Esch-sur-Alzette L-4362, Luxembourg.
Nicolas D
ND
Boscher
Materials Chemistry Research Centre, Department of Chemistry, University College London , 20 Gordon Street, London WC1H 0AJ, United Kingdom.
Claire J
CJ
Carmalt
Materials Chemistry Research Centre, Department of Chemistry, University College London , 20 Gordon Street, London WC1H 0AJ, United Kingdom.
Ivan P
IP
Parkin
atmospheric pressure chemical vapor deposition (APCVD); enhancement of average crystal size; interstitial boron-doped TiO2; photoactive thin films