Localized surface plasmon resonance frequency tuning in highly doped InAsSb/GaSb one-dimensional nanostructures.
We report a detailed analysis of the influence of the doping level and nanoribbon width on the localized surface plasmon resonance (LSPR) by means of reflectance measurements. The plasmonic system, based on one-dimensional periodic gratings of highly Si-doped InAsSb/GaSb semiconductor nanostructures, is fabricated by a simple, accurate and large-area technique fabrication. Increasing the doping level blueshifts the resonance peak while increasing the ribbon width results in a redshift, as confirmed by numerical simulations. This provides an efficient means of fine-tuning the LSPR properties to a target purpose of between 8-20 μm (1250-500 cm(-1)). Finally, we show surface plasmon resonance sensing to absorbing polymer layers. We address values of the quality factor, sensitivity and figure of merit of 16 700 nm RIU(-1) and 2.5, respectively. These results demonstrate Si-doped InAsSb/GaSb to be a low-loss/high sensitive material making it very promising for the development of biosensing devices in the mid-infrared.
Univ. Montpellier, IES, UMR 5214, F-34000, Montpellier, France. CNRS, IES, UMR 5214, F-34000, Montpellier, France.
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Milla
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Barho
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González-Posada
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Cerutti
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Bomers
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Rodriguez
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Tournié
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Taliercio