Normal Incident Long Wave Infrared Quantum Dash Quantum Cascade Photodetector.
We demonstrate a quantum dash quantum cascade photodetector (QDash-QCD) by incorporating self-assembled InAs quantum dashes into the active region of a long wave infrared QCD. Sensitive photoresponse to normal incident light at 10 μm was observed, which is attributed to the intersubband (ISB) transitions in the quantum well/quantum dash (QW/QDash) hybrid absorption region and the following transfer of excited electrons on the extraction stair-like quantum levels separated by LO-phonon energy. The high density InAs quantum dashes were formed in the Stranski-Krastanow mode and stair-like levels were formed by a lattice matched InGaAs/InAlAs superlattice. A stable responsivity from 5 mA/W at 77 K to 3 mA/W at as high as 190 K was observed, which makes the QDash-QCD promising in high temperature operation.
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Feng-Jiao
FJ
Wang
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Fei
F
Ren
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China. liusm@semi.ac.cn.
Shu-Man
SM
Liu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Ning
N
Zhuo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Shen-Qiang
SQ
Zhai
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Jun-Qi
JQ
Liu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China. fqliu@semi.ac.cn.
Feng-Qi
FQ
Liu
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, University of Chinese Academy of Sciences and, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, P.O. Box 912, Beijing, 100083, People's Republic of China.
Zhan-Guo
ZG
Wang
Infrared detector; Quantum cascade; Quantum dash