1.3-μm InAs quantum-dot micro-disk lasers on V-groove patterned and unpatterned (001) silicon.
We report comparison of lasing dynamics in InAs quantum dot (QD) micro-disk lasers (MDLs) monolithically grown on V-groove patterned and planar Si (001) substrates. TEM characterizations reveal abrupt interfaces and reduced threading dislocations in the QD active regions when using the GaAs-on-V-grooved-Si template. The improved crystalline quality translates into lower threshold power in the optically pumped continuous-wave MDLs. Concurrent evaluations were also made with devices fabricated simultaneously on lattice-matched GaAs substrates. Lasing behaviors from 10 K up to room temperature have been studied systematically. The analyses spotlight insights into the optimal epitaxial scheme to achieve low-threshold lasing in telecommunication wavelengths on exact Si (001) substrates.
Qiang
Q
Li
Yating
Y
Wan
Alan Y
AY
Liu
Arthur C
AC
Gossard
John E
JE
Bowers
Evelyn L
EL
Hu
Kei May
KM
Lau