Te-Doped Black Phosphorus Field-Effect Transistors.
Element doping allows manipulation of the electronic properties of 2D materials. Enhanced transport performances and ambient stability of black-phosphorus devices by Te doping are presented. This provides a facile route for achieving airstable black-phosphorus devices.
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Bingchao
B
Yang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, China.|Department of Physics, Beihang University, Beijing, 100191, China.
Bensong
B
Wan
Department of Physics, Southeast University, Nanjing, 211189, China.
Qionghua
Q
Zhou
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Yue
Y
Wang
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Wentao
W
Hu
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.|Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, China.
Weiming
W
Lv
Department of Physics, Southeast University, Nanjing, 211189, China.
Qian
Q
Chen
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, China.
Zhongming
Z
Zeng
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Fusheng
F
Wen
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Jianyong
J
Xiang
Department of Physics, Southeast University, Nanjing, 211189, China.
Shijun
S
Yuan
Department of Physics, Southeast University, Nanjing, 211189, China.
Jinlan
J
Wang
Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou, 215123, China.
Baoshun
B
Zhang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Wenhong
W
Wang
Department of Physics, Beihang University, Beijing, 100191, China.
Junying
J
Zhang
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Bo
B
Xu
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Zhisheng
Z
Zhao
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Yongjun
Y
Tian
State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, Qinghuangdao, 066004, P. R. China.
Zhongyuan
Z
Liu
2D layered materials; Te-doping; black phosphorus; field-effect transistors