Synthesis of High-Quality Large-Area Homogenous 1T' MoTe2from Chemical Vapor Deposition.
High-quality large-area few-layer 1T' MoTe2films with high homogeneity are synthesized by the controlled tellurization of MoO3film. The Mo precursor plays a key role in determining the quality and morphology of the 1T' MoTe2. Furthermore, the amount of Te strongly influences the phase of the MoTe2. The growth method paves the way toward the scalable production of 1T' MoTe2-based applications.
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Lin
L
Zhou
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ahmad
A
Zubair
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ziqiang
Z
Wang
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Xu
X
Zhang
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.|School of Physics Science and Technology, Central South University, Changsha, 410083, China.
Fangping
F
Ouyang
Research Institute of Petroleum Processing, SINOPEC, Beijing, 100083, China.
Kai
K
Xu
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Wenjing
W
Fang
Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama, 338-8570, Japan.
Keiji
K
Ueno
Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.|Department of Nuclear Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Ju
J
Li
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Tomás
T
Palacios
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Jing
J
Kong
Department of Electrical Engineering and Computer Sciences, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.|Department of Physics, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
Mildred S
MS
Dresselhaus
2D materials; chemical vapor deposition; molybdenum ditelluride; transition-metal dichalcogenides