Ultrasensitive Self-Powered Solar-Blind Deep-Ultraviolet Photodetector Based on All-Solid-State Polyaniline/MgZnO Bilayer.
A high sensitivity self-powered solar-blind photodetector is successfully constructed based on the polyaniline/MgZnO bilayer. The maximum responsivity of the photodetector is 160 μA W-1at 250 nm under 0 V bias. The device also exhibits a high on/off ratio of ≈104under 250 nm illumination at a relatively weak light intensity of 130 μW cm-2without any power.
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Hongyu
H
Chen
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Pingping
P
Yu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P. R. China.
Zhenzhong
Z
Zhang
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Feng
F
Teng
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Lingxia
L
Zheng
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Kai
K
Hu
Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
Xiaosheng
X
Fang
DUV photodetector; MgZnO; PANI; self-powered; solar-blind