2.3 µm range InP-based type-II quantum well Fabry-Perot lasers heterogeneously integrated on a silicon photonic integrated circuit.
Heterogeneously integrated InP-based type-II quantum well Fabry-Perot lasers on a silicon waveguide circuit emitting in the 2.3 µm wavelength range are demonstrated. The devices consist of a "W"-shaped InGaAs/GaAsSb multi-quantum-well gain section, III-V/silicon spot size converters and two silicon Bragg grating reflectors to form the laser cavity. In continuous-wave (CW) operation, we obtain a threshold current density of 2.7 kA/cm2and output power of 1.3 mW at 5 °C for 2.35 μm lasers. The lasers emit over 3.7 mW of peak power with a threshold current density of 1.6 kA/cm2in pulsed regime at room temperature. This demonstration of heterogeneously integrated lasers indicates that the material system and heterogeneous integration method are promising to realize fully integrated III-V/silicon photonics spectroscopic sensors in the 2 µm wavelength range.
Ruijun
R
Wang
Stephan
S
Sprengel
Gerhard
G
Boehm
Muhammad
M
Muneeb
Roel
R
Baets
Markus-Christian
MC
Amann
Gunther
G
Roelkens