Atomic-Monolayer MoS2Band-to-Band Tunneling Field-Effect Transistor.
The experimental observation of band-to-band tunneling in novel tunneling field-effect transistors utilizing a monolayer of MoS2as the conducting channel is demonstrated. Our results indicate that the strong gate-coupling efficiency enabled by two-dimensional materials, such as monolayer MoS2, results in the direct manifestation of a band-to-band tunneling current and an ambipolar transport.
National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu, 30078, Taiwan. ywlanblue@gmail.com.|Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. ywlanblue@gmail.com.
Yann-Wen
YW
Lan
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. torresjrcarlos@gmail.com.
Carlos M
CM
Torres
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA.
Shin-Hung
SH
Tsai
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA.
Xiaodan
X
Zhu
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Yumeng
Y
Shi
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.|Research Center for Applied Sciences, Academia Sinica, Taipei, 10617, Taiwan.
Ming-Yang
MY
Li
Physical Sciences and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Kingdom of Saudi Arabia.
Lain-Jong
LJ
Li
National Nano Device Laboratories (NDL), National Applied Research Laboratories, Hsinchu, 30078, Taiwan.|Department of Electrical Engineering, National University of Kaohsiung, Kaohsiung, 811, Taiwan.
Wen-Kuan
WK
Yeh
Department of Electrical Engineering, University of California at Los Angeles, Los Angeles, CA, 90095, USA. wang@seas.ucla.edu.
Kang L
KL
Wang
2D materials; MoS2; band-to-band tunneling; transition metal dichalcogenides; tunneling field effect transistors