Modulating memristive performance of hexagonal WO3 nanowire by water-oxidized hydrogen ion implantation.
In a two-terminal Au/hexagonal WO3 nanowire/Au device, ions drifting or carriers self-trapping under external electrical field will modulate the Schottky barriers between the nanowire and electrodes, and then result in memristive effect. When there are water molecules adsorbed on the surface of WO3 nanowire, hydrogen ions will generate near the positively-charged electrode and transport in the condensed water film, which will enhance the memristive performance characterized by analogic resistive switching remarkably. When the bias voltage is swept repeatedly under high relative humidity level, hydrogen ions will accumulate on the surface and then implant into the lattice of the WO3 nanowire, which leads to a transition from semiconducting WO3 nanowire to metallic HxWO3 nanowire. This insulator-metal transition can be realized more easily after enough electron-hole pairs being excited by laser illumination. The concentration of hydrogen ions in HxWO3 nanowire will decrease when the device is exposed to oxygen atmosphere or the bias voltage is swept in atmosphere with low relative humidity. By modulating the concentration of hydrogen ions, conductive hydrogen tungsten bronze filament might form or rupture near electrodes when the polarity of applied voltage changes, which will endow the device with memristive performance characterized by digital resistive switching.
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Yong
Y
Zhou
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Yuehua
Y
Peng
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Yanling
Y
Yin
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Fang
F
Zhou
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Chang
C
Liu
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Jing
J
Ling
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Le
L
Lei
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Weichang
W
Zhou
Synergetic Innovation Center for Quantum Effects and Application, Key Laboratory of Low-dimensional Quantum Structures and Quantum Control of Ministry of Education, College of Physics and Information Science, Hunan Normal University, Changsha, 410081, P.R. China.
Dongsheng
D
Tang