Indirect Bandgap Puddles in Monolayer MoS2by Substrate-Induced Local Strain.
An unusually large bandgap modulation of 1.23-2.65 eV in monolayer MoS2on a SiO2/Si substrate is found due to the inherent local bending strain induced by the surface roughness of the substrate, reaching the direct-to-indirect bandgap transition. Approximately 80% of the surface area reveals an indirect bandgap, which is confirmed further by the degraded photoluminescence compared to that from suspended MoS2.
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Sungkyunkwan University, Suwon, 16419, South Korea.
Bong Gyu
BG
Shin
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Sungkyunkwan University, Suwon, 16419, South Korea.
Gang Hee
GH
Han
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea.
Seok Joon
SJ
Yun
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea.
Hye Min
HM
Oh
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea.
Jung Jun
JJ
Bae
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea.|Sungkyunkwan Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon, 16419, South Korea.
Young Jae
YJ
Song
Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea.
Chong-Yun
CY
Park
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon, 16419, South Korea.|Department of Energy Science, Sungkyunkwan University, Suwon, 16419, South Korea.|Department of Physics, Sungkyunkwan University, Suwon, 16419, South Korea.
Young Hee
YH
Lee
MoS2; bandgap; direct-to-indirect bandgap transition; layered materials; strain