Electrical spin injection and detection in high mobility 2DEG systems.
In this review paper we present the current status of research related to the topic of electrical spin injection and detection in two-dimensional electron gas (2DEG) systems, formed typically at the interface between two III-V semiconductor compounds. We discuss both theoretical aspects of spin injection in case of ballistic transport as well as give an overview of available reports on spin injection experiments performed on 2DEG structures. In the experimental part we focus particularly on our recent work on all-semiconductor structures with a 2DEG confined at an inverted GaAs/(Al,Ga)As interface and with a ferromagnetic semiconductor (Ga,Mn)As employed as a source of spin-polarized electrons.
Institute for Experimental and Applied Physics, University of Regensburg, 93040 Regensburg, Germany.
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Ciorga