Gate-Tunable Hole and Electron Carrier Transport in Atomically Thin Dual-Channel WSe2/MoS2Heterostructure for Ambipolar Field-Effect Transistors.
An ambipolar dual-channel field-effect transistor (FET) with a WSe2/MoS2heterostructure formed by separately controlled individual channel layers is demonstrated. The FET shows a switchable ambipolar behavior with independent carrier transport of electrons and holes in the individual layers of MoS2and WSe2, respectively. Moreover, the photoresponse is studied at the heterointerface of the WSe2/MoS2dual-channel FET.
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Inyeal
I
Lee
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Servin
S
Rathi
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Dongsuk
D
Lim
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Lijun
L
Li
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Jinwoo
J
Park
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Yoontae
Y
Lee
Department of Physics, Pusan National University, Busan, 46241, Korea.
Kyung Soo
KS
Yi
Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
Krishna P
KP
Dhakal
Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Korea.
Jeongyong
J
Kim
Department of Mechanical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Changgu
C
Lee
Department of Material Science and Engineering, Yonsei University, Seoul, 03722, Korea.
Gwan-Hyoung
GH
Lee
Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
Young Duck
YD
Kim
Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
James
J
Hone
ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.
Sun Jin
SJ
Yun
ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon, 34129, Korea.
Doo-Hyeb
DH
Youn
Samsung-SKKU Graphene Center, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT) and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon, 16419, Korea.
Gil-Ho
GH
Kim
MoS2; WSe2; dual-channel; heterostructures; photoresponse