Atomic Layer Deposition of Ruthenium with TiN Interface for Sub-10 nm Advanced Interconnects beyond Copper.
Atomic layer deposition of ruthenium is studied as a barrierless metallization solution for future sub-10 nm interconnect technology nodes. We demonstrate the void-free filling in sub-10 nm wide single damascene lines using an ALD process in combination with 2.5 Å of ALD TiN interface and postdeposition annealing. At such small dimensions, the ruthenium effective resistance depends less on the scaling than that of Cu/barrier systems. Ruthenium effective resistance potentially crosses the Cu curve at 14 and 10 nm according to the semiempirical interconnect resistance model for advanced technology nodes. These extremely scaled ruthenium lines show excellent electromigration behavior. Time-dependent dielectric breakdown measurements reveal negligible ruthenium ion drift into low-κ dielectrics up to 200 °C, demonstrating that ruthenium can be used as a barrierless metallization in interconnects. These results indicate that ruthenium is highly promising as a replacement to Cu as the metallization solution for future technology nodes.
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Liang Gong
LG
Wen
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Philippe
P
Roussel
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Olalla Varela
OV
Pedreira
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Basoene
B
Briggs
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Benjamin
B
Groven
imec, Kapeldreef 75, 3001 Leuven, Belgium.|Department of Physics and Astronomy, KU Leuven , Celestijnenlaan 200D, 3001 Leuven, Belgium.
Shibesh
S
Dutta
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Mihaela I
MI
Popovici
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Nancy
N
Heylen
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Ivan
I
Ciofi
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Kris
K
Vanstreels
Department of Micro- and Nanotechnology, Technical University of Denmark , Ørsteds Plads, 2800 Kgs. Lyngby, Denmark.
Frederik W
FW
Østerberg
Department of Micro- and Nanotechnology, Technical University of Denmark , Ørsteds Plads, 2800 Kgs. Lyngby, Denmark.
Ole
O
Hansen
Department of Micro- and Nanotechnology, Technical University of Denmark , Ørsteds Plads, 2800 Kgs. Lyngby, Denmark.
Dirch H
DH
Petersen
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Karl
K
Opsomer
Department of Solid-State Sciences, Ghent University , Krijgslaan 281, 9000 Gent, Belgium.
Christophe
C
Detavernie
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Christopher J
CJ
Wilson
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Sven Van
SV
Elshocht
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Kristof
K
Croes
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Jürgen
J
Bömmels
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Zsolt
Z
Tőkei
imec, Kapeldreef 75, 3001 Leuven, Belgium.
Christoph
C
Adelmann
TiN interface; atomic layer deposition (ALD); beyond-Cu; reliability; ruthenium