title: Stabilization of the GeO2/Ge Interface by Nitrogen Incorporation in a One-Step NO Thermal Oxynitridation.
abstract: The thermal instability of GeO2/Ge structures lasts as a barrier against the development of Ge-based metal-oxide-semiconductor devices. In the present work, stabilization was achieved through the incorporation of nitrogen into the oxide layer by thermally growing GeOxNyfilms in NO. With this approach, a stable layer is obtained in a single step as opposed to other nitridation techniques (like plasma immersion) which require additional processing. Significant reduction of GeO desorption from the surface and a strong barrier against additional substrate oxidation were obtained by the insertion of a small amount of nitrogen content (N/O ≈ 10%). Nuclear reaction analysis and profiling showed that nitrogen incorporation and removal occur simultaneously during film growth, yielding N to be distributed throughout the whole film, without accumulation in any particular region. Both the oxidation barrier and the lower GeO desorption rate are explained by a reduction of vacancy diffusivity inside the dielectric. This is not caused by the densification of the oxide, but is a consequence of nitrogen blockage of oxygen vacancy diffusion paths.
authors.affiliation: Instituto de Física and ‡Instituto de Química, UFRGS , 91509-900 Porto Alegre, Brazil.
authors.forename: Gabriela
authors.initials: G
authors.lastname: Copetti
authors.affiliation: Instituto de Física and ‡Instituto de Química, UFRGS , 91509-900 Porto Alegre, Brazil.
authors.forename: Gabriel V
authors.initials: GV
authors.lastname: Soares
authors.affiliation: Instituto de Física and ‡Instituto de Química, UFRGS , 91509-900 Porto Alegre, Brazil.
authors.forename: Cláudio
authors.initials: C
authors.lastname: Radtke
keywords: Rutherford backscattering spectrometry; germanium; germanium oxynitride; nitric oxide; nuclear reaction analysis