title: End-of-Waste SiC-Based Flexible Substrates with Tunable Electrical Properties for Electronic Applications.
abstract: We demonstrated the suitability of polymer composites filled with silicon carbide (SiC) powders derived from a recycling process for applications in electronic devices manufacturing. SiC powders have been synthesized from the process byproducts and used as fillers in the formulation of polystyrene (PS)/SiC composites, which have been used in the preparation of substrates using the solution-casting technique. Different substrates have been prepared by changing the concentration of SiC in the composite in the range from 6.7 to 67 wt % and used in simple electronic devices by performing gold contacts in both planar and stacked configurations. The electrical behaviors of both stacked and planar devices were investigated in direct current (DC) and alternate current (AC) regimes. The experimental results showed that charge percolation could be considered an explanation for the abrupt change in the differential conductivity observed around 30 wt %. Fowler-Nordheim tunneling at high fields has been found to be compatible with static characteristics and with high-frequency AC measurements and, therefore, charge tunneling between SiC islands has been proposed as the physical mechanism provoking the changes in charge transport in the substrates investigated. From this first experimental analysis, it appears that SiC/PS composites could suit their use in tunneling-gate dielectrics (i.e., in transistors suitable for their applications in nonvolatile random-access memory) for low concentrations or as a continuous semiconducting media when SiC is dispersed in high-concentration composites.
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Anna
authors.initials: A
authors.lastname: De Girolamo Del Mauro
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Sergio
authors.initials: S
authors.lastname: Galvagno
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Giuseppe
authors.initials: G
authors.lastname: Nenna
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Riccardo
authors.initials: R
authors.lastname: Miscioscia
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Carla
authors.initials: C
authors.lastname: Minarini
authors.affiliation: ENEA, SSPT-PROMAS-NANO , Piazzale E. Fermi 1, 80055 Portici, Italy.
authors.forename: Sabrina
authors.initials: S
authors.lastname: Portofino