title: Semiconductor/Piezoelectrics Hybrid Heterostructures with Highly Effective Gate-Tunable Electrotransport and Magnetic Behaviors.
abstract: We report the epitaxial growth of oxygen deficient titanium dioxide thin films on 0.7Pb(Mg1/3Nb2/3)O3-0.3PbTiO3(PMN-PT) single crystals and realized highly effective in situ electrostatic manipulation of electrotransport and magnetism of TiO2-δfilms via gate voltages. Upon the polarization switching in the PMN-PT, the carrier density of the TiO2-δfilm could be reversibly modified, resulting in a large nonvolatile resistivity modulation by ∼51% at T = 300 K, approximately 4-12 times larger than that of other transition-metal oxide film/PMN-PT structures. By taking advantage of in situ manipulation of the carrier density via gate voltages, we found that competition between the trap of electrons by the Ti3+-VOpairs and that by the positive polarization charges at the interface results in a significant resistivity relaxation upon the polarization switching, and revealed that magnetization is inversely correlated with the carrier density of the TiO2-δfilm. Such hybrid structures combining materials with dissimilar functionalities may have potential applications in multifunctional devices which can take advantage of the useful and unique properties of both materials.
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, China.|Department of Physics, Shanghai University , Shanghai 200444, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Chen
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, China.|Department of Physics, Shanghai University , Shanghai 200444, China.
authors.forename: Wei-Yao
authors.initials: WY
authors.lastname: Zhao
authors.affiliation: Department of Physics, Beijing Normal University , Beijing 100875, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Wang
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China , Hefei 230026, China.
authors.forename: Guan-Yin
authors.initials: GY
authors.lastname: Gao
authors.affiliation: Department of Physics, Beijing Normal University , Beijing 100875, China.
authors.forename: Jin-Xing
authors.initials: JX
authors.lastname: Zhang
authors.affiliation: School of Materials Science and Engineering, Nanchang University , Nanchang 330031, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, China.
authors.forename: Xiao-Min
authors.initials: XM
authors.lastname: Li
authors.affiliation: Department of Physics, Shanghai University , Shanghai 200444, China.
authors.forename: Shi-Xun
authors.initials: SX
authors.lastname: Cao
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale and Department of Physics, University of Science and Technology of China , Hefei 230026, China.|Collaborative Innovation Center of Advanced Microstructures , Nanjing 210093, China.
authors.forename: Xiao-Guang
authors.initials: XG
authors.lastname: Li
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, China.
authors.forename: Hao-Su
authors.initials: HS
authors.lastname: Luo
authors.affiliation: State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences , Shanghai 200050, China.
authors.forename: Ren-Kui
authors.initials: RK
authors.lastname: Zheng
keywords: PMN-PT single crystal; electronic transport; interfacial charge effect; semiconductor-piezoelectrics hybrid structure; titanium dioxide thin films