title: Low-Power, Self-Rectifying, and Forming-Free Memristor with an Asymmetric Programing Voltage for a High-Density Crossbar Application.
abstract: A Pt/NbOx/TiOy/NbOx/TiN stack integrated on a 30 nm contact via shows a programming current as low as 10 nA and 1 pA for the set and reset switching, respectively, and a self-rectifying ratio as high as ∼105, which are suitable characteristics for low-power memristor applications. It also shows a forming-free characteristic. A charge-trap-associated switching model is proposed to account for this self-rectifying memrisive behavior. In addition, an asymmetric voltage scheme (AVS) to decrease the write power consumption by utilizing this self-rectifying memristor is also described. When the device is used in a 1000 × 1000 crossbar array with the AVS, the programming power can be decreased to 8.0% of the power consumption of a conventional biasing scheme. If the AVS is combined with a nonlinear selector, a power consumption reduction to 0.31% of the reference value is possible.
authors.affiliation: Hewlett Packard Labs, Hewlett Packard Enterprise , Palo Alto, California 94304, United States.
authors.forename: Kyung Min
authors.initials: KM
authors.lastname: Kim
authors.affiliation: Hewlett Packard Labs, Hewlett Packard Enterprise , Palo Alto, California 94304, United States.
authors.forename: Jiaming
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Hewlett Packard Labs, Hewlett Packard Enterprise , Palo Alto, California 94304, United States.
authors.forename: Catherine
authors.initials: C
authors.lastname: Graves
authors.affiliation: Department of Electrical and Computer Engineering, University of Massachusetts , Amherst, Massachusetts 01003, United States.
authors.forename: J Joshua
authors.initials: JJ
authors.lastname: Yang
authors.affiliation: Department of Materials Science and Engineering, Seoul National University of Science and Technology , Seoul 139-743, Republic of Korea.
authors.forename: Byung Joon
authors.initials: BJ
authors.lastname: Choi
authors.affiliation: Department of Materials Science and Engineering and Inter-University Semiconductor Research Center, College of Engineering, Seoul National University , Seoul 151-744, Republic of Korea.
authors.forename: Cheol Seong
authors.initials: CS
authors.lastname: Hwang
authors.affiliation: Hewlett Packard Labs, Hewlett Packard Enterprise , Palo Alto, California 94304, United States.
authors.forename: Zhiyong
authors.initials: Z
authors.lastname: Li
authors.affiliation: Hewlett Packard Labs, Hewlett Packard Enterprise , Palo Alto, California 94304, United States.
authors.forename: R Stanley
authors.initials: RS
authors.lastname: Williams
keywords: Low current; forming-free; low power; memristor; self-rectifying