title: Effects of Al Doping on the Properties of ZnO Thin Films Deposited by Atomic Layer Deposition.
abstract: The tuning of structural, optical, and electrical properties of Al-doped ZnO films deposited by atomic layer deposition technique is reported in this work. With the increasing Al doping level, the evolution from (002) to (100) diffraction peaks indicates the change in growth mode of ZnO films. Spectroscopic ellipsometry has been applied to study the thickness, optical constants, and band gap of AZO films. Due to the increasing carrier concentration after Al doping, a blue shift of band gap and absorption edge can be observed, which can be interpreted by Burstein-Moss effect. The carrier concentration and resistivity are found to vary significantly among different doping concentration, and the optimum value is also discussed. The modulations and improvements of properties are important for Al-doped ZnO films to apply as transparent conductor in various applications.
authors.affiliation: Department of Optical Science and Engineering, Ministry of Education, Key Laboratory of Micro and Nano Photonic Structures, Fudan University, 220 Handan Road, Shanghai, 200433, China.
authors.forename: Chen-Hui
authors.initials: CH
authors.lastname: Zhai
authors.affiliation: Department of Optical Science and Engineering, Ministry of Education, Key Laboratory of Micro and Nano Photonic Structures, Fudan University, 220 Handan Road, Shanghai, 200433, China. rjzhang@fudan.edu.cn.
authors.forename: Rong-Jun
authors.initials: RJ
authors.lastname: Zhang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China. xinchen@mail.sitp.ac.cn.
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.affiliation: Department of Optical Science and Engineering, Ministry of Education, Key Laboratory of Micro and Nano Photonic Structures, Fudan University, 220 Handan Road, Shanghai, 200433, China.
authors.forename: Yu-Xiang
authors.initials: YX
authors.lastname: Zheng
authors.affiliation: Department of Optical Science and Engineering, Ministry of Education, Key Laboratory of Micro and Nano Photonic Structures, Fudan University, 220 Handan Road, Shanghai, 200433, China.
authors.forename: Song-You
authors.initials: SY
authors.lastname: Wang
authors.affiliation: School of Optoelectronics, Beijing Institute of Technology, Beijing, 100081, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Liu
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Ning
authors.initials: N
authors.lastname: Dai
authors.affiliation: Department of Optical Science and Engineering, Ministry of Education, Key Laboratory of Micro and Nano Photonic Structures, Fudan University, 220 Handan Road, Shanghai, 200433, China.
authors.forename: Liang-Yao
authors.initials: LY
authors.lastname: Chen
keywords: Al-doped ZnO thin films; Atomic layer deposition; Electrical properties; Optical properties; Spectroscopic ellipsometry