title: Photodetectors Based on Two-Dimensional Layer-Structured Hybrid Lead Iodide Perovskite Semiconductors.
abstract: Hybrid lead iodide perovskite semiconductors have attracted intense research interests recently because of their easy fabrication processes and high power conversion efficiencies in photovoltaic applications. Layer-structured materials have interesting properties such as quantum confinement effect and tunable band gap due to the unique two-dimensional crystalline structures. ⟨100⟩-oriented layer-structured perovskite materials are inherited from three-dimensional ABX3perovskite materials with a generalized formula of (RNH3)2(CH3NH3)n-1MnX3n+1, and adopt the Ruddlesden-Popper type crystalline structure. Here we report the synthesis and investigation of three layer-structured perovskite materials with different layer numbers: (C4H9NH3)2PbI4(n = 1, one-layered perovskite), (C4H9NH3)2(CH3NH3)Pb2I7(n = 2, two-layered perovskite) and (C4H9NH3)2(CH3NH3)2Pb3I10(n = 3, three-layered perovskite). Their photoelectronic properties were investigated in related to their molecular structures. Photodetectors based on these two-dimensional (2D) layer-structured perovskite materials showed tunable photoresponse with short response time in milliseconds. The photodetectors based on three-layered perovskite showed better performances than those of the other two devices, in terms of output current, responsivity, Ilight/Idarkratio, and response time, because of its smaller optical band gap and more condensed microstructure comparing the other two materials. These results revealed the relationship between the molecular structures, film microstructures and the photoresponse properties of 2D layer-structured hybrid perovskites, and demonstrated their potentials as flexible, functional, and tunable semiconductors in optoelectronic applications, by taking advantage of their tunable quantum well molecular structure.
authors.affiliation: School of Materials Science and Engineering, Tongji University , Shanghai, 201804, P. R. China.
authors.forename: Jiachen
authors.initials: J
authors.lastname: Zhou
authors.affiliation: School of Materials Science and Engineering, Tongji University , Shanghai, 201804, P. R. China.
authors.forename: Yingli
authors.initials: Y
authors.lastname: Chu
authors.affiliation: School of Materials Science and Engineering, Tongji University , Shanghai, 201804, P. R. China.
authors.forename: Jia
authors.initials: J
authors.lastname: Huang
keywords: high sensitivity; layer-structured perovskites; lead iodide; photodetector; sensor