title: Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.
abstract: The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO2matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.|IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Gang
authors.initials: G
authors.lastname: Niu
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.|Dipartimento di Scienze, Università Roma Tre , Viale Marconi 446, 00146 Rome, Italy.
authors.forename: Giovanni
authors.initials: G
authors.lastname: Capellini
authors.affiliation: Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät, Humboldt Universtät zu Berlin , Newtonstrasse 15, 12489 Berlin, Germany.
authors.forename: Fariba
authors.initials: F
authors.lastname: Hatami
authors.affiliation: Dipartimento di Fisica "E. R. Caianiello″ Universita' degli Studi di Salerno Via Giovanni Paolo II, 132, Fisciano, Salerno I 84084, Italy.
authors.forename: Antonio
authors.initials: A
authors.lastname: Di Bartolomeo
authors.affiliation: Technische Universität Berlin , Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin, Germany.
authors.forename: Tore
authors.initials: T
authors.lastname: Niermann
authors.affiliation: Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät, Humboldt Universtät zu Berlin , Newtonstrasse 15, 12489 Berlin, Germany.
authors.forename: Emad Hameed
authors.initials: EH
authors.lastname: Hussein
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Markus Andreas
authors.initials: MA
authors.lastname: Schubert
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Hans-Michael
authors.initials: HM
authors.lastname: Krause
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Peter
authors.initials: P
authors.lastname: Zaumseil
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Skibitzki
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.
authors.forename: Grzegorz
authors.initials: G
authors.lastname: Lupina
authors.affiliation: Institut für Physik, Mathematisch-Naturwissenschaftliche Fakultät, Humboldt Universtät zu Berlin , Newtonstrasse 15, 12489 Berlin, Germany.
authors.forename: William Ted
authors.initials: WT
authors.lastname: Masselink
authors.affiliation: Technische Universität Berlin , Institut für Optik und Atomare Physik, Straße des 17. Juni 135, 10623 Berlin, Germany.
authors.forename: Michael
authors.initials: M
authors.lastname: Lehmann
authors.affiliation: University of California at Los Angeles , Department of Materials Science and Engineering, Los Angeles, California 90095-1595, United States.
authors.forename: Ya-Hong
authors.initials: YH
authors.lastname: Xie
authors.affiliation: IHP , Im Technologiepark 25, 15236 Frankfurt (Oder), Germany.|Brandenburgische Technische Universität , Konrad-Zuse-Strasse 1, 03046 Cottbus, Germany.
authors.forename: Thomas
authors.initials: T
authors.lastname: Schroeder
keywords: III−V compounds; graphene; monolithic integration; nanoheteroepitaxy; rectification