title: Tilt series STEM simulation of a 25×25×25nm semiconductor with characteristic X-ray emission.
abstract: The detection and quantification of fabrication defects is vital to the ongoing miniaturization of integrated circuits. The atomic resolution of HAADF-STEM combined with the chemical sensitivity of EDS could provide the means by which this is achieved for the next generation of semiconductor devices. To realize this, however, a streamlined acquisition and analysis procedure must first be developed. Here, we report the simulation of a HAADF-STEM and EDS tilt-series dataset of a PMOS finFET device which will be used as a testbed for such a development. The methods used to calculate the data and the details of the specimen model are fully described here. The dataset consists of 179 projections in 2° increments with HAADF images and characteristic X-ray maps for each projection. This unusually large calculation has been made possible through the use of a national supercomputer and will be made available for the development and assessment of reconstruction and analysis procedures for this highly significant industrial application.
authors.affiliation: Department of Imaging Physics, Delft University of Technology, 2628CJ Delft, The Netherlands.
authors.forename: R
authors.initials: R
authors.lastname: Aveyard
authors.affiliation: Department of Imaging Physics, Delft University of Technology, 2628CJ Delft, The Netherlands. Electronic address: b.rieger@tudelft.nl.
authors.forename: B
authors.initials: B
authors.lastname: Rieger
keywords: EDS; HAADF; STEM; Semiconductor; Simulation; Tomography; X-ray