title: Postsynthetic and Selective Control of Lead Halide Perovskite Microlasers.
abstract: The control of photoluminescence and absorption of lead halide perovskites plays a key role in their applications in micro- and nano-sized light emission devices and photodetectors. To date, the wavelength controls of lead halide perovskite microlasers are mostly realized by changing the halide mixture in solution. Herein, we report the postsynthetic and selective control of the optical properties of lead halide perovskites with conventional semiconductor technology. By selectively exposing a CH3NH3PbBr3microstructure with chlorine in inductively coupled plasma, we find that the wavelengths of absorption, photoluminescence, and laser emissions of exposed structures are blue-shifted around 50 nm. Most importantly, the device characteristics such as the photoluminescence intensities and laser thresholds are well maintained during the reaction process. We believe our finding will significantly boost the practical applications of lead halide perovskite based optoelectronics.
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Nan
authors.initials: N
authors.lastname: Zhang
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Kaiyang
authors.initials: K
authors.lastname: Wang
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Haohan
authors.initials: H
authors.lastname: Wei
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Zhiyuan
authors.initials: Z
authors.lastname: Gu
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Wenzhao
authors.initials: W
authors.lastname: Sun
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Jiankai
authors.initials: J
authors.lastname: Li
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Shumin
authors.initials: S
authors.lastname: Xiao
authors.affiliation: National Key Laboratory on Tunable Laser Technology, Department of Electrical and Information Engineering and ‡Department of Material Science and Engineering, Harbin Institute of Technology , Shenzhen, 518055, China.
authors.forename: Qinghai
authors.initials: Q
authors.lastname: Song