title: Erratum: High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed.
authors.forename: Charles
authors.initials: C
authors.lastname: Renard
authors.forename: Timothée
authors.initials: T
authors.lastname: Molière
authors.forename: Nikolay
authors.initials: N
authors.lastname: Cherkashin
authors.forename: José
authors.initials: J
authors.lastname: Alvarez
authors.forename: Laetitia
authors.initials: L
authors.lastname: Vincent
authors.forename: Alexandre
authors.initials: A
authors.lastname: Jaffré
authors.forename: Géraldine
authors.initials: G
authors.lastname: Hallais
authors.forename: James Patrick
authors.initials: JP
authors.lastname: Connolly
authors.forename: Denis
authors.initials: D
authors.lastname: Mencaraglia
authors.forename: Daniel
authors.initials: D
authors.lastname: Bouchier