title: Origin of multi-level switching and telegraphic noise in organic nanocomposite memory devices.
abstract: The origin of negative differential resistance (NDR) and its derivative intermediate resistive states (IRSs) of nanocomposite memory systems have not been clearly analyzed for the past decade. To address this issue, we investigate the current fluctuations of organic nanocomposite memory devices with NDR and the IRSs under various temperature conditions. The 1/f noise scaling behaviors at various temperature conditions in the IRSs and telegraphic noise in NDR indicate the localized current pathways in the organic nanocomposite layers for each IRS. The clearly observed telegraphic noise with a long characteristic time in NDR at low temperature indicates that the localized current pathways for the IRSs are attributed to trapping/de-trapping at the deep trap levels in NDR. This study will be useful for the development and tuning of multi-bit storable organic nanocomposite memory device systems.
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Younggul
authors.initials: Y
authors.lastname: Song
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Hyunhak
authors.initials: H
authors.lastname: Jeong
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.|Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
authors.forename: Seungjun
authors.initials: S
authors.lastname: Chung
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
authors.forename: Geun Ho
authors.initials: GH
authors.lastname: Ahn
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Tae-Young
authors.initials: TY
authors.lastname: Kim
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Jingon
authors.initials: J
authors.lastname: Jang
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Daekyoung
authors.initials: D
authors.lastname: Yoo
authors.affiliation: Department of Applied Physics, Hanyang University, Ansan 15588, Korea.
authors.forename: Heejun
authors.initials: H
authors.lastname: Jeong
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.affiliation: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee