title: Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2Circuits with E-Mode FETs for Large-Area Electronics.
abstract: Two-dimensional electronics based on single-layer (SL) MoS2offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS2circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS2FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc-dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library that is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Lili
authors.initials: L
authors.lastname: Yu
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Dina
authors.initials: D
authors.lastname: El-Damak
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Ujwal
authors.initials: U
authors.lastname: Radhakrishna
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Xi
authors.initials: X
authors.lastname: Ling
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Ahmad
authors.initials: A
authors.lastname: Zubair
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Yuxuan
authors.initials: Y
authors.lastname: Lin
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Yuhao
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Materials Science and Engineering, National Tsing-Hua University , Hsinchu 30013, Taiwan.
authors.forename: Meng-Hsi
authors.initials: MH
authors.lastname: Chuang
authors.affiliation: Materials Science and Engineering, National Tsing-Hua University , Hsinchu 30013, Taiwan.
authors.forename: Yi-Hsien
authors.initials: YH
authors.lastname: Lee
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Dimitri
authors.initials: D
authors.lastname: Antoniadis
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Anantha
authors.initials: A
authors.lastname: Chandrakasan
authors.affiliation: Massachusetts Institute of Technology , 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, United States.
authors.forename: Tomas
authors.initials: T
authors.lastname: Palacios
keywords: Transition metal dichalcogenides; chemical vapor deposition; computer-aided design flow; digital circuits; molybdenum disulfide; power management circuits