title: Single nanowire green InGaN/GaN light emitting diodes.
abstract: Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.
authors.affiliation: Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 2601, Australia. Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, People's Republic of China.
authors.forename: Guogang
authors.initials: G
authors.lastname: Zhang
authors.forename: Ziyuan
authors.initials: Z
authors.lastname: Li
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Yuan
authors.forename: Fan
authors.initials: F
authors.lastname: Wang
authors.forename: Lan
authors.initials: L
authors.lastname: Fu
authors.forename: Zhe
authors.initials: Z
authors.lastname: Zhuang
authors.forename: Fang-Fang
authors.initials: FF
authors.lastname: Ren
authors.lastname: Bin Liu
authors.forename: Rong
authors.initials: R
authors.lastname: Zhang
authors.forename: Hark Hoe
authors.initials: HH
authors.lastname: Tan
authors.forename: Chennupati
authors.initials: C
authors.lastname: Jagadish