title: Observation and coherent control of interface-induced electronic resonances in a field-effect transistor.
abstract: Electronic defect states at material interfaces provide highly deleterious sources of noise in solid-state nanostructures, and even a single trapped charge can qualitatively alter the properties of short one-dimensional nanowire field-effect transistors (FET) and quantum bit (qubit) devices. Understanding the dynamics of trapped charge is thus essential for future nanotechnologies, but their direct detection and manipulation is rather challenging. Here, a transistor-based set-up is used to create and probe individual electronic defect states that can be coherently driven with microwave (MW) pulses. Strikingly, we resolve a large number of very high quality (Q ∼ 1 × 105) resonances in the transistor current as a function of MW frequency and demonstrate both long decoherence times (∼1 μs-40 μs) and coherent control of the defect-induced dynamics. Efficiently characterizing over 800 individually addressable resonances across two separate defect-hosting materials, we propose that their properties are consistent with weakly driven two-level systems.
authors.affiliation: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan.|Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: J O
authors.initials: JO
authors.lastname: Tenorio-Pearl
authors.affiliation: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors.forename: E D
authors.initials: ED
authors.lastname: Herbschleb
authors.affiliation: Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: S
authors.initials: S
authors.lastname: Fleming
authors.affiliation: Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK.
authors.forename: C
authors.initials: C
authors.lastname: Creatore
authors.affiliation: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan.
authors.forename: S
authors.identifier: 0000-0002-8009-2077
authors.initials: S
authors.lastname: Oda
authors.affiliation: Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, Tokyo 152-8552, Japan.|Electrical Engineering Division, Department of Engineering, University of Cambridge, Cambridge CB3 0FA, UK.
authors.forename: W I
authors.initials: WI
authors.lastname: Milne
authors.affiliation: Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, UK.
authors.forename: A W
authors.initials: AW
authors.lastname: Chin