title: Room temperature direct band gap emission characteristics of surfactant mediated grown compressively strained Ge films.
abstract: Compressively strained Ge films have been grown on relaxed Si0.45Ge0.55virtual substrates using molecular beam epitaxy in the presence of Sb as a surfactant. Structural characterization has shown that films grown in the presence of surfactant exhibit very smooth surfaces with a relatively higher strain value in comparison to those grown without any surfactant. The variation of strain with increasing Ge layer thickness was analyzed using Raman spectroscopy. The strain is found to be reduced with increasing film thickness due to the onset of island nucleation following Stranski-Krastanov growth mechanism. No phonon assisted direct band gap photoluminescence from compressively strained Ge films grown on relaxed Si0.45Ge0.55has been achieved up to room temperature. Excitation power and temperature dependent photoluminescence have been studied in details to investigate the origin of different emission sub-bands.
authors.affiliation: Department of Physics, Indian Institute of Technology, Kharagpur, West Bengal 721302, India.
authors.forename: Ajit K
authors.initials: AK
authors.lastname: Katiyar
authors.forename: Andreas
authors.initials: A
authors.lastname: Grimm
authors.forename: R
authors.initials: R
authors.lastname: Bar
authors.forename: Jan
authors.initials: J
authors.lastname: Schmidt
authors.forename: Tobias
authors.initials: T
authors.lastname: Wietler
authors.forename: H Joerg
authors.initials: HJ
authors.lastname: Osten
authors.forename: Samit K
authors.initials: SK
authors.lastname: Ray