title: 200 GHz Maximum Oscillation Frequency in CVD Graphene Radio Frequency Transistors.
abstract: Graphene is a promising candidate in analog electronics with projected operation frequency well into the terahertz range. In contrast to the intrinsic cutoff frequency (fT) of 427 GHz, the maximum oscillation frequency (fmax) of graphene device still remains at low level, which severely limits its application in radio frequency amplifiers. Here, we develop a novel transfer method for chemical vapor deposition graphene, which can prevent graphene from organic contamination during the fabrication process of the devices. Using a self-aligned gate deposition process, the graphene transistor with 60 nm gate length exhibits a record high fmaxof 106 and 200 GHz before and after de-embedding, respectively. This work defines a unique pathway to large-scale fabrication of high-performance graphene transistors, and holds significant potential for future application of graphene-based devices in ultra high frequency circuits.
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Menglong
authors.initials: M
authors.lastname: Sun
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Zhengyi
authors.initials: Z
authors.lastname: Cao
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Shuai
authors.initials: S
authors.lastname: Huo
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Jianjun
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Xinxin
authors.initials: X
authors.lastname: Yu
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Yuechan
authors.initials: Y
authors.lastname: Kong
authors.affiliation: Shanghai Institute of Micro-system and Information Technology, Chinese Academy of Sciences , Shanghai 200050, P. R. China.
authors.forename: Guanghui
authors.initials: G
authors.lastname: Yu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University , Wuhan 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute , Nanjing 210016, China.
authors.forename: Tangsheng
authors.initials: T
authors.lastname: Chen
keywords: field-effect transistors; maximum oscillation frequency; parasitical resistance; radio frequency; self-aligned