title: Direct Observation of Dopants Distribution and Diffusion in GaAs Planar Nanowires with Atom Probe Tomography.
abstract: Intentional and unintentional doping in semiconductor nanowires undoubtedly have significant impact on the device performance. However, spatially resolved precise determination of dopant concentration is challenging due to insufficient sensitivity and resolution of conventional techniques. In this paper, quantitative 3D distribution of Si and Zn dopants in planar GaAs nanowires and their interface with AlGaAs film underneath are obtained by using a unique atom probe tomography technique, providing critical insights for the growth and potential applications of these nanowires.
authors.forename: Jiangtao
authors.initials: J
authors.lastname: Qu
authors.affiliation: Department of Electrical and Computer Engineering, Micro and Nanotechnology lab, University of Illinois , Urbana, Illinois 61801, United States.
authors.forename: Wonsik
authors.initials: W
authors.lastname: Choi
authors.affiliation: Department of Electrical and Computer Engineering, Micro and Nanotechnology lab, University of Illinois , Urbana, Illinois 61801, United States.
authors.forename: Parsian
authors.initials: P
authors.lastname: Katal Mohseni
authors.affiliation: Department of Electrical and Computer Engineering, Micro and Nanotechnology lab, University of Illinois , Urbana, Illinois 61801, United States.
authors.forename: Xiuling
authors.initials: X
authors.lastname: Li
authors.affiliation: Australian Nuclear Science and Technology Organisation , Locked Bag 2001, Kirrawee DC, New South Wales 2232, Australia.
authors.forename: Yingjie
authors.initials: Y
authors.lastname: Zhang
authors.forename: Hansheng
authors.initials: H
authors.lastname: Chen
authors.forename: Simon
authors.initials: S
authors.lastname: Ringer
authors.forename: Rongkun
authors.initials: R
authors.lastname: Zheng
keywords: APT; FIB; NWs; doping; planar GaAs nanowires; tomography