title: Even-odd layer-dependent magnetotransport of high-mobility Q-valley electrons in transition metal disulfides.
abstract: In few-layer transition metal dichalcogenides (TMDCs), the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q valleys related by threefold rotational symmetry and time reversal symmetry. In even layers, the extra inversion symmetry requires all states to be Kramers degenerate; whereas in odd layers, the intrinsic inversion asymmetry dictates the Q valleys to be spin-valley coupled. Here we report the transport characterization of prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons in few-layer TMDCs. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices, which provide a crucial information for understanding the unique properties of multi-valley band structures of few-layer TMDCs.
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Zefei
authors.initials: Z
authors.lastname: Wu
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Shuigang
authors.initials: S
authors.lastname: Xu
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Huanhuan
authors.initials: H
authors.lastname: Lu
authors.affiliation: Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Armin
authors.initials: A
authors.lastname: Khamoshi
authors.affiliation: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
authors.forename: Gui-Bin
authors.identifier: 0000-0001-5935-7555
authors.initials: GB
authors.lastname: Liu
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Tianyi
authors.initials: T
authors.lastname: Han
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Yingying
authors.initials: Y
authors.lastname: Wu
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Jiangxiazi
authors.initials: J
authors.lastname: Lin
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Gen
authors.initials: G
authors.lastname: Long
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Yuheng
authors.initials: Y
authors.lastname: He
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Cai
authors.affiliation: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Physics, Beijing Institute of Technology, Beijing 100081, China.
authors.forename: Yugui
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Department of Physics, University of Texas at Dallas, Richardson, Texas 75080, USA.
authors.forename: Fan
authors.identifier: 0000-0003-4623-4200
authors.initials: F
authors.lastname: Zhang
authors.affiliation: Department of Physics and the Center for 1D/2D Quantum Materials, the Hong Kong University of Science and Technology, Hong Kong, China.
authors.forename: Ning
authors.initials: N
authors.lastname: Wang