title: Ellipsometric characterization of doped Ge0.95Sn0.05films in the infrared range for plasmonic applications.
abstract: GeSn as a group-IV material opens up new possibilities for realizing photonic device concepts in Si-compatible fabrication processes. Here we present results of the ellipsometric characterization of highly p- and n-type doped Ge0.95Sn0.05alloys deposited on Si substrates investigated in the wavelength range from 1 to 16 μm. We discuss the suitability of these films for integrated plasmonic applications in the infrared region.
authors.forename: L
authors.initials: L
authors.lastname: Augel
authors.forename: I A
authors.initials: IA
authors.lastname: Fischer
authors.forename: F
authors.initials: F
authors.lastname: Hornung
authors.forename: M
authors.initials: M
authors.lastname: Dressel
authors.forename: A
authors.initials: A
authors.lastname: Berrier
authors.forename: M
authors.initials: M
authors.lastname: Oehme
authors.forename: J
authors.initials: J
authors.lastname: Schulze