title: Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet.
abstract: Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.|Research Institute for Solar and Sustainable Energies, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
authors.forename: Chang-Hyun
authors.initials: CH
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
authors.forename: Sujin
authors.initials: S
authors.lastname: Sung
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 61005, Republic of Korea.
authors.forename: Myung-Han
authors.initials: MH
authors.lastname: Yoon