title: High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices.
abstract: High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3,and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180-200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25-45 cm2V-1s-1) than single oxide devices (typically 2-5 cm2V-1s-1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.
authors.affiliation: Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK; Dutch Polymer Institute (DPI) P.O. Box 902 5600 AX Eindhoven The Netherlands.
authors.forename: Yen-Hung
authors.initials: YH
authors.lastname: Lin
authors.affiliation: Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK.
authors.forename: Hendrik
authors.initials: H
authors.lastname: Faber
authors.affiliation: Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK.
authors.forename: John G
authors.initials: JG
authors.lastname: Labram
authors.affiliation: Institute of Electronic Structure and Laser (IESL) Foundation for Research and Technology-Hellas (FORTH) Heraklion 71003 Greece; Materials Science & Technology Department University of Crete Heraklion 71003 Greece.
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Stratakis
authors.affiliation: Institute of Chemical Engineering and High Temperature Processes (ICEHT) Foundation of Research and Technology Hellas (FORTH) Stadiou Strasse Platani P.O. Box 1414 Patras GR-265 04 Greece.
authors.forename: Labrini
authors.initials: L
authors.lastname: Sygellou
authors.affiliation: Center of Materials Technology and Photonics and Electrical Engineering Department Technological Educational Institute (TEI) of Crete Heraklion 71004 Greece.
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Kymakis
authors.affiliation: Physics Department Aristotle University of Thessaloniki Thessaloniki 54124 Greece.
authors.forename: Nikolaos A
authors.initials: NA
authors.lastname: Hastas
authors.affiliation: Cornell High Energy Synchrotron Source Wilson Laboratory Cornell University Ithaca NY 14853 USA.
authors.forename: Ruipeng
authors.initials: R
authors.lastname: Li
authors.affiliation: Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia.
authors.forename: Kui
authors.initials: K
authors.lastname: Zhao
authors.affiliation: Materials Science and Engineering Division of Physical Sciences and Engineering King Abdullah University of Science and Technology Thuwal 23955-6900 Saudi Arabia.
authors.forename: Aram
authors.initials: A
authors.lastname: Amassian
authors.affiliation: Department of Materials and Centre for Plastic Electronics Imperial College London London Royal School of Mines London SW7 2AZ UK.
authors.forename: Neil D
authors.initials: ND
authors.lastname: Treat
authors.affiliation: Department of Materials and Centre for Plastic Electronics Imperial College London London Royal School of Mines London SW7 2AZ UK.
authors.forename: Martyn
authors.initials: M
authors.lastname: McLachlan
authors.affiliation: Department of Physics and Centre for Plastic Electronics Blackett Laboratory Imperial College London London SW7 2AZ UK.
authors.forename: Thomas D
authors.initials: TD
authors.lastname: Anthopoulos
keywords: energy quantization; metal oxides; solution‐processed materials; superlattices; transistors; transparent electronics