title: Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors.
abstract: Large-area "in situ" transition-metal substitution doping for chemical-vapor-deposited semiconducting transition-metal-dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition-metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct-bandgap photoluminescence.
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Jian
authors.initials: J
authors.lastname: Gao
authors.affiliation: Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
authors.forename: Young Duck
authors.initials: YD
authors.lastname: Kim
authors.affiliation: Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.|Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Liangbo
authors.initials: L
authors.lastname: Liang
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Juan Carlos
authors.initials: JC
authors.lastname: Idrobo
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Phil
authors.initials: P
authors.lastname: Chow
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Jiawei
authors.initials: J
authors.lastname: Tan
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Baichang
authors.initials: B
authors.lastname: Li
authors.affiliation: Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Lu
authors.initials: L
authors.lastname: Li
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Bobby G
authors.initials: BG
authors.lastname: Sumpter
authors.affiliation: Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Toh-Ming
authors.initials: TM
authors.lastname: Lu
authors.affiliation: Department of Physics, Applied Physics and Astronomy, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Vincent
authors.initials: V
authors.lastname: Meunier
authors.affiliation: Department of Mechanical Engineering, Columbia University, New York, NY, 10027, USA.
authors.forename: James
authors.initials: J
authors.lastname: Hone
authors.affiliation: Department of Materials Science and Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.|Department of Mechanical, Aerospace and Nuclear Engineering, Rensselaer Polytechnic Institute, 110 8th Street, Troy, NY, 12180, USA.
authors.forename: Nikhil
authors.initials: N
authors.lastname: Koratkar
keywords: band structure; chemical vapor deposition; electronic properties; monolayer transition-metal dichalcogenides; transition-metal doping