Effect of Al2O3Deposition on Performance of Top-Gated Monolayer MoS2-Based Field Effect Transistor.
Deposition of high-k dielectrics on two-dimensional MoS2is an important process for successful application of the transition-metal dichalcogenides in electronic devices. Here, we show the effect of H2O reactant exposure on monolayer (1L) MoS2during atomic layer deposition (ALD) of Al2O3. The results showed that the ALD-Al2O3caused degradation of the performance of 1L MoS2field effect transistors (FETs) owing to the formation of Mo-O bonding and trapping of H2O molecules at the Al2O3/MoS2interface. Furthermore, we demonstrated that reduced duration of exposure to H2O reactant and postdeposition annealing were essential to the enhancement of the performance of top-gated 1L MoS2FETs. The mobility and on/off current ratios were increased by factors of approximately 40 and 103, respectively, with reduced duration of exposure to H2O reactant and with postdeposition annealing.
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Jeong-Gyu
JG
Song
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Seok Jin
SJ
Kim
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Whang Je
WJ
Woo
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Youngjun
Y
Kim
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Il-Kwon
IK
Oh
School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
Gyeong Hee
GH
Ryu
School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST) , Ulsan 689-798, Korea.
Zonghoon
Z
Lee
Display R&D Center, Samsung Display Co., Ltd. , Nongseo-dong, Kiheung-gu, Yongin, Gyeonggi-do 449-902, Korea.
Jun Hyung
JH
Lim
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Jusang
J
Park
School of Electrical and Electronics Engineering, Yonsei University , 262 Seongsanno, Seodaemun-gu, Seoul 120-749, Korea.
Hyungjun
H
Kim
atomic layer deposition; field-effect transistor; molybdenum disulfide; transition-metal dichalcogenides; two-dimensional materials