Single Electron Gating of Topological Insulators.
The effective gating of topological insulators is demonstrated, through the coupling of molecules to their surface. By using electric fields, they allow for dynamic control of the interface charge state by adding or removing single electrons. This process creates a robust transconductance bistability resembling a single-electron transistor. These findings make hybrid molecule/topological interfaces functional elements while at the same time pushing miniaturization to its ultimate limit.
Physikalisches Institut, Experimentelle Physik II, Universität Würzburg Am Hubland, 97074, Würzburg, Germany.
Paolo
P
Sessi
Physikalisches Institut, Experimentelle Physik II, Universität Würzburg Am Hubland, 97074, Würzburg, Germany.
Thomas
T
Bathon
V.S. Sobolev Institute of Geology and Mineralogy, Siberian Branch Russian Academy of Sciences, 630090, Novosibirsk, Russia.|Physics Department, Novosibirsk State University, 630090, Novosibirsk, Russia.|Saint-Petersburg State University, 198504, Saint-Petersburg, Russia.
Konstantin Aleksandrovich
KA
Kokh
Physics Department, Novosibirsk State University, 630090, Novosibirsk, Russia.|Saint-Petersburg State University, 198504, Saint-Petersburg, Russia.|A.V. Rzanov Institute of Semiconductor Physics, Siberian Branch Russian Academy of Sciences, 630090, Novosibirsk, Russia.
Oleg Evgenievich
OE
Tereshchenko
Physikalisches Institut, Experimentelle Physik II, Universität Würzburg Am Hubland, 97074, Würzburg, Germany.|Wilhelm Conrad Röntgen-Center for Complex Material Systems (RCCM), Am Hubland, 97074, Würzburg, Germany.
Matthias
M
Bode
hybrid heterostructures; ionization; molecules; scanning tunneling microscopy; topological insulators