Engineering Topological Surface States of Cr-Doped Bi2Se3Films by Spin Reorientation and Electric Field.
The tailoring of topological surface states in topological insulators is essential for device applications and for exploring new topological phase. Here, we propose a practical way to induce the quantum anomalous Hall phase and unusual metal-insulator transitions in Cr-doped Bi2Se3films based on the model Hamiltonian and first-principles calculations. Using the combination of in-plane and plane-normal components of the spin along with external electric fields, we demonstrate that the topological state and band structures of topological insulating films exhibit rich features such as the shift of Dirac cones and the opening of nontrivial band gaps. We also show that the in-plane magnetization leads to significant suppression of inter-TSS scattering in Cr-doped Bi2Se3. Our work provides new strategies to obtain the desired electronic structures for the device, complementary to the efforts of an extensive material search.
Department of Physics and Astronomy, University of California , Irvine, California 92697, United States.
Jeongwoo
J
Kim
Department of Physics, Pohang University of Science and Technology , Pohang 790-784, Republic of Korea.
Seung-Hoon
SH
Jhi
Department of Physics and Astronomy, University of California , Irvine, California 92697, United States.
Ruqian
R
Wu
Dirac cone engineering; quantum anomalous Hall phase; spin reorientation; topological surface state