Atomically thin quantum light-emitting diodes.
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.
Carmen
C
Palacios-Berraquero
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Matteo
M
Barbone
Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.
Dhiren M
DM
Kara
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Xiaolong
X
Chen
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Ilya
I
Goykhman
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Duhee
D
Yoon
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Anna K
AK
Ott
Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.
Jan
J
Beitner
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0034, Japan.
Kenji
http://orcid.org/0000-0003-3701-8119
K
Watanabe
Advanced Materials Laboratory, National Institute for Materials Science, Tsukuba, Ibaraki 305-0034, Japan.
Takashi
T
Taniguchi
Cambridge Graphene Centre, University of Cambridge, Cambridge CB3 0FA, UK.
Andrea C
AC
Ferrari
Cavendish Laboratory, University of Cambridge, J.J. Thomson Ave., Cambridge CB3 0HE, UK.
Mete
M
Atatüre
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