Thermally Assisted Nonvolatile Memory in Monolayer MoS2Transistors.
We demonstrate a novel form of thermally-assisted hysteresis in the transfer curves of monolayer MoS2FETs, characterized by the appearance of a large gate-voltage window and distinct current levels that differ by a factor of ∼102. The hysteresis emerges for temperatures in excess of 400 K and, from studies in which the gate-voltage sweep parameters are varied, appears to be related to charge injection into the SiO2gate dielectric. The thermally-assisted memory is strongly suppressed in equivalent measurements performed on bilayer transistors, suggesting that weak screening in the monolayer system plays a vital role in generating its strongly sensitive response to the charge-injection process. By exploiting the full features of the hysteretic transfer curves, programmable memory operation is demonstrated. The essential principles demonstrated here point the way to a new class of thermally assisted memories based on atomically thin two-dimensional semiconductors.
Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States.
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He
Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States.
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Ramamoorthy
Department of Physics, University at Buffalo, The State University of New York , Buffalo, New York 14260-1500, United States.
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Kwan
Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States.
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Lee
Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States.
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Nathawat
Department of Physics, King Mongkut's Institute of Technology Ladkrabang , Bangkok 10520, Thailand.
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Somphonsane
Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Matsunaga
Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Higuchi
Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Yamanaka
Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Aoki
Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
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Gong
Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
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Zhang
Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
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Vajtai
Department of Materials Science and NanoEngineering, Rice University , Houston, Texas 77005, United States.
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Ajayan
Department of Electrical Engineering, University at Buffalo, The State University of New York , Buffalo, New York 14260-1900, United States.|Graduate School of Advanced Integration Science, Chiba University , 1-33 Yayoi-cho, Inage-ku, Chiba 263-8522, Japan.
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Bird
Molybdenum disulfide; electrical hysteresis; nonvolatile memory; thermally-assisted memory