Quantum-Transport Characteristics of a p-n Junction on Single-Layer TiS3.
By using density functional theory and non-equilibrium Green's function-based methods, we investigated the electronic and transport properties of a TiS3monolayer p-n junction. We constructed a lateral p-n junction on a TiS3monolayer using Li and F adatoms. An applied bias voltage caused significant variability in the electronic and transport properties of the TiS3p-n junction. In addition, the spin-dependent current-voltage characteristics of the constructed TiS3p-n junction were analyzed. Important device characteristics were found, such as negative differential resistance and rectifying diode behaviors for spin-polarized currents in the TiS3p-n junction. These prominent conduction properties of the TiS3p-n junction offer remarkable opportunities for the design of nanoelectronic devices based on a recently synthesized single-layered material.
Department of Physics, Izmir Institute of Technology, 35430, Izmir, Turkey.
Fadil
http://orcid.org/0000-0003-1786-3235
F
Iyikanat
Department of Physics, Izmir Institute of Technology, 35430, Izmir, Turkey.
Ramazan T
RT
Senger
Department of Physics, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium.
Francois M
FM
Peeters
Department of Photonics, Izmir Institute of Technology, 35430, Izmir, Turkey.
Hasan
H
Sahin
ab initio calculations; doping; electron transfer; monolayers; p-n junctions