A multilevel nonvolatile magnetoelectric memory.
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric memories have been proposed and explored in the past decade. Here we propose a new principle to realize a multilevel nonvolatile memory based on the multiple states of the magnetoelectric coefficient (α) of multiferroics. Because the states of α depends on the relative orientation between magnetization and polarization, one can reach different levels of α by controlling the ratio of up and down ferroelectric domains with external electric fields. Our experiments in a device made of the PMN-PT/Terfenol-D multiferroic heterostructure confirm that the states of α can be well controlled between positive and negative by applying selective electric fields. Consequently, two-level, four-level, and eight-level nonvolatile memory devices are demonstrated at room temperature. This kind of multilevel magnetoelectric memory retains all the advantages of ferroelectric random access memory but overcomes the drawback of destructive reading of polarization. In contrast, the reading of α is nondestructive and highly efficient in a parallel way, with an independent reading coil shared by all the memory cells.
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Jianxin
J
Shen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Junzhuang
J
Cong
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Dashan
D
Shang
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Yisheng
Y
Chai
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Shipeng
S
Shen
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Kun
K
Zhai
Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, P. R. China.
Young
Y
Sun
Nat Nanotechnol. 2008 Jul;3(7):429-33
18654568
Science. 2005 Apr 22;308(5721):508-10
15845842
Phys Rev Lett. 2006 Dec 1;97(22):227201
17155834
Science. 2008 Apr 11;320(5873):190-4
18403702
Nat Mater. 2007 Apr;6(4):296-302
17351615
Nat Mater. 2007 Nov;6(11):824-32
17972937
Nat Commun. 2013;4:1990
23756366
Nat Mater. 2008 Jun;7(6):425-6
18497843
Nat Mater. 2007 Apr;6(4):256-7
17351613
Nat Mater. 2010 Apr;9(4):309-14
20190772
Nature. 2006 Aug 17;442(7104):759-65
16915279
Nat Mater. 2007 Nov;6(11):833-40
17972938
Science. 1989 Dec 15;246(4936):1400-5
17755995
Nature. 2009 Jul 2;460(7251):81-4
19483675
Nat Nanotechnol. 2016 Mar;11(3):231-41
26936817
Nat Mater. 2013 May;12(5):397-402
23416728
Adv Mater. 2012 Jan 17;24(3):402-6
22162010
Nat Mater. 2004 Oct;3(10):703-8
15359344
Nat Mater. 2010 Sep;9(9):756-61
20657590
Nature. 2014 Dec 18;516(7531):370-3
25519134
Nat Mater. 2007 Nov;6(11):813-23
17972936