Low-Temperature Growth of Indium Oxide Thin Film by Plasma-Enhanced Atomic Layer Deposition Using Liquid Dimethyl(N-ethoxy-2,2-dimethylpropanamido)indium for High-Mobility Thin Film Transistor Application.
Low-temperature growth of In2O3films was demonstrated at 70-250 °C by plasma-enhanced atomic layer deposition (PEALD) using a newly synthesized liquid indium precursor, dimethyl(N-ethoxy-2,2-dimethylcarboxylicpropanamide)indium (Me2In(EDPA)), and O2plasma for application to high-mobility thin film transistors. Self-limiting In2O3PEALD growth was observed with a saturated growth rate of approximately 0.053 nm/cycle in an ALD temperature window of 90-180 °C. As-deposited In2O3films showed negligible residual impurity, film densities as high as 6.64-7.16 g/cm3, smooth surface morphology with a root-mean-square (RMS) roughness of approximately 0.2 nm, and semiconducting level carrier concentrations of 1017-1018cm-3. Ultrathin In2O3channel-based thin film transistors (TFTs) were fabricated in a coplanar bottom gate structure, and their electrical performances were evaluated. Because of the excellent quality of In2O3films, superior electronic switching performances were achieved with high field effect mobilities of 28-30 and 16-19 cm2/V·s in the linear and saturation regimes, respectively. Furthermore, the fabricated TFTs showed excellent gate control characteristics in terms of subthreshold swing, hysteresis, and on/off current ratio. The low-temperature PEALD process for high-quality In2O3films using the developed novel In precursor can be widely used in a variety of applications such as microelectronics, displays, energy devices, and sensors, especially at temperatures compatible with organic substrates.
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Division of Materials Science and Engineering, Hanyang University , 222 Wangsimni-Ro, Seoul 04763, Republic of Korea.
Hyo Yeon
HY
Kim
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Department of Chemistry, Sungkyunkwan University , Suwon 16419, Republic of Korea.
Eun Ae
EA
Jung
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Geumbi
G
Mun
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Department of Chemical Convergence Materials, University of Science and Technology (UST) , 217 Gajeong-Ro, Yuseong-Gu, Deajeon 34113, Republic of Korea.
Raphael E
RE
Agbenyeke
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Department of Chemical Convergence Materials, University of Science and Technology (UST) , 217 Gajeong-Ro, Yuseong-Gu, Deajeon 34113, Republic of Korea.
Bo Keun
BK
Park
Division of Materials Science and Engineering, Hanyang University , 222 Wangsimni-Ro, Seoul 04763, Republic of Korea.
Jin-Seong
JS
Park
Department of Chemistry, Sungkyunkwan University , Suwon 16419, Republic of Korea.
Seung Uk
SU
Son
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.
Dong Ju
DJ
Jeon
Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, Republic of Korea.
Sang-Hee Ko
SK
Park
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Department of Chemical Convergence Materials, University of Science and Technology (UST) , 217 Gajeong-Ro, Yuseong-Gu, Deajeon 34113, Republic of Korea.
Taek-Mo
TM
Chung
Division of Advanced Materials, Korea Research Institute of Chemical Technology(KRICT) , 141 Gajeong-Ro, Yuseong-Gu, Deajeon 34114, Republic of Korea.|Department of Chemical Convergence Materials, University of Science and Technology (UST) , 217 Gajeong-Ro, Yuseong-Gu, Deajeon 34113, Republic of Korea.
Jeong Hwan
JH
Han
high-mobility thin film transistor; indium oxide; low-temperature plasma-enhanced atomic layer deposition; novel indium precursor