Ferroelectric-Driven Performance Enhancement of Graphene Field-Effect Transistors Based on Vertical Tunneling Heterostructures.
A vertical graphene heterostructure field-effect transistor (VGHFET) using an ultrathin ferroelectric film as a tunnel barrier is developed. The heterostructure is capable of providing new degrees of tunability and functionality via coupling between the ferroelectricity and the tunnel current of the VGHFET, which results in a high-performance device. The results pave the way for developing novel atomic-scale 2D heterostructures and devices.
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Shuoguo
S
Yuan
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
Zhibin
Z
Yang
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Chao
C
Xie
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Feng
F
Yan
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Jiyan
J
Dai
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Shu Ping
SP
Lau
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.
Helen L W
HL
Chan
Department of Applied Physics, The Hong Kong Polytechnic University, Kowloon, Hong Kong, P. R. China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
Jianhua
J
Hao
2D materials; ferroelectric thin films; field-effect transistors; graphene; pulsed laser deposition