Single-Layer Halide Perovskite Light-Emitting Diodes with Sub-Band Gap Turn-On Voltage and High Brightness.
Charge-carrier injection into an emissive semiconductor thin film can result in electroluminescence and is generally achieved by using a multilayer device structure, which requires an electron-injection layer (EIL) between the cathode and the emissive layer and a hole-injection layer (HIL) between the anode and the emissive layer. The recent advancement of halide perovskite semiconductors opens up a new path to electroluminescent devices with a greatly simplified device structure. We report cesium lead tribromide light-emitting diodes (LEDs) without the aid of an EIL or HIL. These so-called single-layer LEDs have exhibited a sub-band gap turn-on voltage. The devices obtained a brightness of 591 197 cd m-2at 4.8 V, with an external quantum efficiency of 5.7% and a power efficiency of 14.1 lm W-1. Such an advancement demonstrates that very high efficiency of electron and hole injection can be obtained in perovskite LEDs even without using an EIL or HIL.
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.
Junqiang
J
Li
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.
Xin
X
Shan
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.
Sri Ganesh R
SGR
Bade
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.|Materials Science and Engineering, Florida State University , Tallahassee, Florida 32306, United States.
Thomas
T
Geske
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.
Qinglong
Q
Jiang
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.
Xin
X
Yang
Department of Industrial and Manufacturing Engineering, High-Performance Materials Institute, Florida State University , Tallahassee, Florida 32310, United States.|Materials Science and Engineering, Florida State University , Tallahassee, Florida 32306, United States.
Zhibin
Z
Yu