Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect.
Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied for different thicknesses of MoTe2. The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6-1.55 μm) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 10(9) cm Hz(1/2) W(-1) for 637 nm light and 1.3 × 10(9) cm Hz(1/2) W(-1) for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.
National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai 200083, People's Republic of China. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing 100049, People's Republic of China.
Hai
H
Huang
Jianlu
J
Wang
Weida
W
Hu
Lei
L
Liao
Peng
P
Wang
Xudong
X
Wang
Fan
F
Gong
Yan
Y
Chen
Guangjian
G
Wu
Wenjin
W
Luo
Hong
H
Shen
Tie
T
Lin
Jinglan
J
Sun
Xiangjian
X
Meng
Xiaoshuang
X
Chen
Junhao
J
Chu