title: Electrolyte-Gated Organic Field-Effect Transistor Based on a Solution Sheared Organic Semiconductor Blend.
abstract: This communication presents a novel electrolyte gated field-effect transistor based on a blend of dibenzo-tetrathiafulvalene and polystyrene deposited through bar-assisted meniscus shearing. This technique allows the fabrication of high performing electronic devices suitable for (bio)sensing applications and might capture industrial interest due to its scalability. The reported devices can operate in aqueous solution with comparable complexity to real samples.
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Francesca
authors.initials: F
authors.lastname: Leonardi
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Stefano
authors.initials: S
authors.lastname: Casalini
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Qiaoming
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Sergi
authors.initials: S
authors.lastname: Galindo
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Diego
authors.initials: D
authors.lastname: Gutiérrez
authors.affiliation: Institut de Ciència de Materials de Barcelona (ICMAB-CSIC) and CIBER-BBN, Campus de la UAB, 08193, Bellaterra, Spain.
authors.forename: Marta
authors.initials: M
authors.lastname: Mas-Torrent
keywords: organic field-effect transistors; organic large-area electronics; organic semiconductors; printable electronics; solution shearing