title: Large gap Quantum Spin Hall Insulators of Hexagonal III-Bi monolayer.
abstract: In the present work, we demonstrate that both GaBi3and InBi3monolayers are Quantum Spin Hall insulators. Here, the electronic band structures and edge states of the two novel monolayers are systematically investigated by first principle calculation. Our analysis of the band inversion and Z2number demonstrate that both GaBi3and InBi3are promising 2D TIs with large gaps of 283meV and 247meV, respectively. Taking GaBi3as example, it is illustrated that the edge states are impacted by SOC and finite size effect. In addition, it is found that the compression and tension totally affect differently on the edge states. Finally, the electron velocity is studied in detail, which is highly important in the manufacturing of spintronics device.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Qunqun
authors.initials: Q
authors.lastname: Liu
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Dai
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Yandong
authors.initials: Y
authors.lastname: Ma
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Xinru
authors.initials: X
authors.lastname: Li
authors.affiliation: School of Computer Science and Technology, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Tiejun
authors.initials: T
authors.lastname: Li
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Chengwang
authors.initials: C
authors.lastname: Niu
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, 250100, People's Republic of China.
authors.forename: Baibiao
authors.initials: B
authors.lastname: Huang