title: Resonance Coupling in Silicon Nanosphere-J-Aggregate Heterostructures.
abstract: Due to their optical magnetic and electric resonances associated with the high refractive index, dielectric silicon nanoparticles have been explored as novel nanocavities that are excellent candidates for enhancing various light-matter interactions at the nanoscale. Here, from both of theoretical and experimental aspects, we explored resonance coupling between excitons and magnetic/electric resonances in heterostructures composed of the silicon nanoparticle coated with a molecular J-aggregate shell. The resonance coupling was originated from coherent energy transfer between the exciton and magnetic/electric modes, which was manifested by quenching dips on the scattering spectrum due to formation of hybrid modes. The influences of various parameters, including the molecular oscillation strength, molecular absorption line width, molecular shell thickness, refractive index of the surrounding environment, and separation between the core and shell, on the resonance coupling behaviors were scrutinized. In particular, the resonance coupling can approach the strong coupling regime by choosing appropriate molecular parameters, where an anticrossing behavior with a mode splitting of 100 meV was observed on the energy diagram. Most interestingly, the hybrid modes in such dielectric heterostructure can exhibit unidirectional light scattering behaviors, which cannot be achieved by those in plexcitonic nanoparticle composed of a metal nanoparticle core and a molecular shell.
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.|School of Physics, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Yanlin
authors.initials: Y
authors.lastname: Ke
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Ningsheng
authors.initials: N
authors.lastname: Xu
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Runze
authors.initials: R
authors.lastname: Zhan
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.|School of Physics, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Zebo
authors.initials: Z
authors.lastname: Zheng
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.|School of Physics, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Jinxiu
authors.initials: J
authors.lastname: Wen
authors.affiliation: School of Physics, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Jiahao
authors.initials: J
authors.lastname: Yan
authors.affiliation: School of Materials Science and Engineering, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Pu
authors.initials: P
authors.lastname: Liu
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Chen
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Juncong
authors.initials: J
authors.lastname: She
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Liu
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Huanjun
authors.initials: H
authors.lastname: Chen
authors.affiliation: State Key Lab of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University , Guangzhou 510275, China.
authors.forename: Shaozhi
authors.initials: S
authors.lastname: Deng
keywords: J-aggregates; Silicon nanospheres; excitons; magnetic resonances; resonance coupling