title: Chemical Composition of Nanoporous Layer Formed by Electrochemical Etching of p-Type GaAs.
abstract: We have performed a detailed characterization study of electrochemically etched p-type GaAs in a hydrofluoric acid-based electrolyte. The samples were investigated and characterized through cathodoluminescence (CL), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy (EDX), and X-ray photoelectron spectroscopy (XPS). It was found that after electrochemical etching, the porous layer showed a major decrease in the CL intensity and a change in chemical composition and in the crystalline phase. Contrary to previous reports on p-GaAs porosification, which stated that the formed layer is composed of porous GaAs, we report evidence that the porous layer is in fact mainly constituted of porous As2O3. Finally, a qualitative model is proposed to explain the porous As2O3layer formation on p-GaAs substrate.
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.
authors.forename: Youcef A
authors.identifier: http://orcid.org/0000-0002-7168-1988
authors.initials: YA
authors.lastname: Bioud
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.
authors.forename: Abderraouf
authors.initials: A
authors.lastname: Boucherif
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.
authors.forename: Ali
authors.initials: A
authors.lastname: Belarouci
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.
authors.forename: Etienne
authors.initials: E
authors.lastname: Paradis
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada.
authors.forename: Dominique
authors.initials: D
authors.lastname: Drouin
authors.affiliation: Laboratoire Nanotechnologies Nanosystèmes (LN2)-CNRS UMI-3463, Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard Université, Sherbrooke, J1K OA5, Québec, Canada. Richard.Ares@USherbrooke.ca.
authors.forename: Richard
authors.initials: R
authors.lastname: Arès
keywords: Cathodoluminescence; Electrochemical etching; GaAs nanostructures; Porous GaAs