title: The relationship between the dislocations and microstructure in In0.82Ga0.18As/InP heterostructures.
abstract: In this work, we propose a formation mechanism to explain the relationship between the surface morphology (and microstructure) and dislocations in the In0.82Ga0.18As/InP heterostructure. The In0.82Ga0.18As epitaxial layers were grown on the InP (100) substrate at various temperatures (430 °C, 410 °C and 390 °C) using low pressure metalorganic chemical vapor deposition (LP-MOCVD). Obvious protrusions and depressions were obseved on the surface of the In0.82Ga0.18As/InP heterostructure because of the movement of dislocations from the core to the surface. The surface morphologies of the In0.82Ga0.18As/InP (100) system became uneven with increasing temperature, which was associated with the formation of dislocations. Such research investigating the dislocation of large lattice mismatch heterostructures may play an important role in the future-design of semiconductor films.
authors.affiliation: Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, P.R. China.
authors.forename: Liang
authors.initials: L
authors.lastname: Zhao
authors.affiliation: Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, P.R. China.
authors.forename: Zuoxing
authors.initials: Z
authors.lastname: Guo
authors.affiliation: Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, P.R. China.
authors.forename: Qiulin
authors.initials: Q
authors.lastname: Wei
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, P.R. China.
authors.forename: Guoqing
authors.initials: G
authors.lastname: Miao
authors.affiliation: Key Lab of Automobile Materials Ministry of Education, College of Materials Science and Engineering, Jilin University, Changchun, 130025, P.R. China.
authors.forename: Lei
authors.initials: L
authors.lastname: Zhao