title: Polymer Nanodot-Hybridized Alkyl Silicon Oxide Nanostructures for Organic Memory Transistors with Outstanding High-Temperature Operation Stability.
abstract: Organic memory devices (OMDs) are becoming more important as a core component in flexible electronics era because of their huge potentials for ultrathin, lightweight and flexible plastic memory modules. In particular, transistor-type OMDs (TOMDs) have been gradually spotlighted due to their structural advantages possessing both memory and driving functions in single devices. Although a variety of TOMDs have been developed by introducing various materials, less attention has been paid to the stable operation at high temperatures. Here we demonstrate that the polymer nanodot-embedded alkyl silicon oxide (ASiO) hybrid materials, which are prepared by sol-gel and thermal cross-linking reactions between poly(4-vinylphenol) (PVP) and vinyltriethoxysilane, can deliver low-voltage (1~5 V) TOMDs with outstanding operation stability (>4700 cycles) at high temperatures (150 °C). The efficient low-voltage memory function is enabled by the embedded PVP nanodots with particular lattice nanostructures, while the high thermal stability is achieved by the cross-linked ASiO network structures.
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Chulyeon
authors.initials: C
authors.lastname: Lee
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Jooyeok
authors.initials: J
authors.lastname: Seo
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Jeongnam
authors.initials: J
authors.lastname: Kim
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Jaehoon
authors.initials: J
authors.lastname: Jeong
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Hyemi
authors.initials: H
authors.lastname: Han
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.|Priority Research Center, Research Institute of Advanced Energy Technology, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Hwajeong
authors.initials: H
authors.lastname: Kim
authors.affiliation: Organic Nanoelectronics Laboratory, Department of Chemical Engineering, School of Applied Chemical Engineering, Kyungpook National University, Daegu 41566, Republic of Korea.
authors.forename: Youngkyoo
authors.initials: Y
authors.lastname: Kim