title: MgZnO High Voltage Thin Film Transistors on Glass for Inverters in Building Integrated Photovoltaics.
abstract: Building integrated photovoltaics (BIPV) have attracted considerable interests because of its aesthetically attractive appearance and overall low cost. In BIPV, system integration on a glass substrate like windows is essential to cover a large area of a building with low cost. However, the conventional high voltage devices in inverters have to be built on the specially selected single crystal substrates, limiting its application for large area electronic systems, such as the BIPV. We demonstrate a Magnesium Zinc Oxide (MZO) based high voltage thin film transistor (HVTFT) built on a transparent glass substrate. The devices are designed with unique ring-type structures and use modulated Mg doping in the channel - gate dielectric interface, resulting in a blocking voltage of over 600 V. In addition to BIPV, the MZO HVTFT based inverter technology also creates new opportunities for emerging self-powered smart glass.
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Wen-Chiang
authors.initials: WC
authors.lastname: Hong
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Chieh-Jen
authors.initials: CJ
authors.lastname: Ku
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Rui
authors.initials: R
authors.lastname: Li
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Siamak
authors.initials: S
authors.lastname: Abbaslou
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Pavel
authors.initials: P
authors.lastname: Reyes
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Szu-Ying
authors.initials: SY
authors.lastname: Wang
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Guangyuan
authors.initials: G
authors.lastname: Li
authors.affiliation: Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, New York 11973, USA.
authors.forename: Ming
authors.initials: M
authors.lastname: Lu
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Kuang
authors.initials: K
authors.lastname: Sheng
authors.affiliation: Department of Electrical and Computer Engineering, Rutgers University, Piscataway, NJ 08854, USA.
authors.forename: Yicheng
authors.initials: Y
authors.lastname: Lu