title: The influence of interfacial tensile strain on the charge transport characteristics of MoS2-based vertical heterojunction devices.
abstract: We demonstrate the charge transport characteristics of MoS2-based vertical heterojunction devices through the formation of interfacial strain. Atomically thin MoS2bilayers were directly synthesized on a p-type Si substrate by using chemical vapor deposition to introduce an interfacial tensile strain in the vertical heterojunction diode structure, which was confirmed by Raman, X-ray and ultraviolet photoelectron spectroscopy techniques. The electrical and optoelectronic properties of the heterojunction devices with the as-grown MoS2(A-MoS2) on p-Si were compared with those of transferred MoS2(T-MoS2)/p-Si devices. To clearly understand the charge transport characteristics induced by the interfacial tensile strain, the Fowler-Nordheim (FN) analysis of the electrical properties of the diode devices was conducted with the corresponding energy band diagrams. All of the fabricated MoS2-based vertical diodes exhibited clearly rectifying behaviors, but the photoresponse properties of the A-MoS2-based and T-MoS2-based heterojunctions exhibited distinct differences. Interestingly, we found that the tunneling barrier heights of the A-MoS2-based heterojunction devices were relatively higher than those of the T-MoS2-based devices and were almost the same before and after illumination due to the interfacial tensile strain, whereas those of the T-MoS2-based devices were lowered after illumination. Our study will help further understand the charge transport properties of 2D material-based heterojunction devices in the presence of interfacial strain, ultimately enabling the design of electronic and optoelectronic devices with novel functionalities.
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr and Division of Biotechnology, Advanced Institute of Environment and Bioscience, College of Environmental and Bioscience Sciences, Chonbuk National University, Iksan 54596, Republic of Korea.
authors.forename: Fu
authors.initials: F
authors.lastname: Huang
authors.affiliation: Department of Advanced Functional Thin Films, Surface Technology Division, Korea Institute of Materials Science, Changwon, Gyeongnam 51508, Republic of Korea.
authors.forename: Byungjin
authors.initials: B
authors.lastname: Cho
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr.
authors.forename: Hee-Suk
authors.initials: HS
authors.lastname: Chung
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr.
authors.forename: Seung Bae
authors.initials: SB
authors.lastname: Son
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr and Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Jung Han
authors.initials: JH
authors.lastname: Kim
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr.
authors.forename: Tae-Sung
authors.initials: TS
authors.lastname: Bae
authors.affiliation: Advanced Nano Surface Research Group, Korea Basic Science Institute, Daejeon 34133, Republic of Korea.
authors.forename: Hyung Joong
authors.initials: HJ
authors.lastname: Yun
authors.affiliation: Department of Engineering Science, University of Oxford, Oxford OX1 3PJ, UK.
authors.forename: Jung Inn
authors.initials: JI
authors.lastname: Sohn
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Kyu Hwan
authors.initials: KH
authors.lastname: Oh
authors.affiliation: School of Materials Science and Engineering, Inha University, Incheon 22212, Republic of Korea.
authors.forename: Myung Gwan
authors.initials: MG
authors.lastname: Hahm
authors.affiliation: Division of Biotechnology, Advanced Institute of Environment and Bioscience, College of Environmental and Bioscience Sciences, Chonbuk National University, Iksan 54596, Republic of Korea.
authors.forename: Jung Hee
authors.initials: JH
authors.lastname: Park
authors.affiliation: Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Republic of Korea. wkh27@kbsi.re.kr.
authors.forename: Woong-Ki
authors.initials: WK
authors.lastname: Hong