title: Large linear magnetoresistance in heavily-doped Nb:SrTiO3epitaxial thin films.
abstract: Interaction between electrons has long been a focused topic in condensed-matter physics since it has led to the discoveries of astonishing phenomena, for example, high-Tcsuperconductivity and colossal magnetoresistance (CMR) in strongly-correlated materials. In the study of strongly-correlated perovskite oxides, Nb-doped SrTiO3(Nb:SrTiO3) has been a workhorse not only as a conducting substrate, but also as a host possessing high carrier mobility. In this work, we report the observations of large linear magnetoresistance (LMR) and the metal-to-insulator transition (MIT) induced by magnetic field in heavily-doped Nb:STO (SrNb0.2Ti0.8O3) epitaxial thin films. These phenomena are associated with the interplay between the large classical MR due to high carrier mobility and the electronic localization effect due to strong spin-orbit coupling, implying that heavily Nb-doped Sr(Nb0.2Ti0.8)O3is promising for the application in spintronic devices.
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.|Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: Hyunwoo
authors.initials: H
authors.lastname: Jin
authors.affiliation: Department of Physics and Astronomy, Institute of Applied Physics, Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Korea.
authors.forename: Keundong
authors.initials: K
authors.lastname: Lee
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.|Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: Jin-Sang
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.
authors.forename: Byung-Ki
authors.initials: BK
authors.lastname: Cheong
authors.affiliation: Department of Physics, Konkuk University, Seoul 143-701, Korea.
authors.forename: Bae Ho
authors.initials: BH
authors.lastname: Park
authors.affiliation: Department of Physics, The Catholic University of Korea, Bucheon 420-743, Korea.
authors.forename: Sungwon
authors.initials: S
authors.lastname: Yoon
authors.affiliation: Department of Physics, The Catholic University of Korea, Bucheon 420-743, Korea.
authors.forename: B J
authors.initials: BJ
authors.lastname: Suh
authors.affiliation: Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea.
authors.forename: Changyoung
authors.initials: C
authors.lastname: Kim
authors.affiliation: Department of Physics and Astronomy, University of Kentucky, Lexington, KY 40506, USA.
authors.forename: S S A
authors.initials: SS
authors.lastname: Seo
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology, Seoul 136-791, Korea.|Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea.
authors.forename: Suyoun
authors.initials: S
authors.lastname: Lee