title: Lithium-ion-based solid electrolyte tuning of the carrier density in graphene.
abstract: We have developed a technique to tune the carrier density in graphene using a lithium-ion-based solid electrolyte. We demonstrate that the solid electrolyte can be used as both a substrate to support graphene and a back gate. It can induce a change in the carrier density as large as 1 × 1014cm-2, which is much larger than that induced with oxide-film dielectrics, and it is comparable with that induced by liquid electrolytes. Gate modulation of the carrier density is still visible at 150 K, which is lower than the glass transition temperature of most liquid gating electrolytes.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Jialin
authors.initials: J
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Meng
authors.initials: M
authors.lastname: Wang
authors.affiliation: Shenzhen Key laboratory of Laser Engineering, College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Li
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Xuefu
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Lixing
authors.initials: L
authors.lastname: You
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Shan
authors.initials: S
authors.lastname: Qiao
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Gao
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|CAS Center for Excellence in Superconducting Electronics (CENSE), Shanghai 200050, China.|School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai, China.
authors.forename: Mianheng
authors.initials: M
authors.lastname: Jiang