title: High-resolution electrohydrodynamic inkjet printing of stretchable metal oxide semiconductor transistors with high performance.
abstract: As demands for high pixel densities and wearable forms of displays increase, high-resolution printing technologies to achieve high performance transistors beyond current amorphous silicon levels and to allow low-temperature solution processability for plastic substrates have been explored as key processes in emerging flexible electronics. This study describes electrohydrodynamic inkjet (e-jet) technology for direct printing of oxide semiconductor thin film transistors (TFTs) with high resolution (minimum line width: 2 μm) and superb performance, including high mobility (∼230 cm2V-1s-1). Logic operations of the amplifier circuits composed of these e-jet-printed metal oxide semiconductor (MOS) TFTs demonstrate their high performance. Printed In2O TFTs with e-jet printing-assisted high-resolution S/D electrodes were prepared, and the direct printing of passivation layers on these channels enhanced their gate-bias stabilities significantly. Moreover, low process temperatures (<250 °C) enable the use of thin plastic substrates; highly flexible and stretchable TFT arrays have been demonstrated, suggesting promise for next-generation printed electronics.
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: S-Y
authors.initials: SY
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: K
authors.initials: K
authors.lastname: Kim
authors.affiliation: Radiation and Environmental Lab., Central Research Institute, Korea Hydro and Nuclear Power, Daejeon Metropolitan City, 34114, Republic of Korea.
authors.forename: Y H
authors.initials: YH
authors.lastname: Hwang
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: J
authors.initials: J
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: J
authors.initials: J
authors.lastname: Jang
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Metropolitan City, 34141, Republic of Korea. bsbae@kaist.ac.kr.
authors.forename: Y
authors.initials: Y
authors.lastname: Nam
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
authors.forename: Y
authors.initials: Y
authors.lastname: Kang
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: M
authors.initials: M
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: H J
authors.initials: HJ
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: Z
authors.identifier: http://orcid.org/0000-0003-3246-4072
authors.initials: Z
authors.lastname: Lee
authors.affiliation: School of Electrical and Computer Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea.
authors.forename: J
authors.initials: J
authors.lastname: Choi
authors.affiliation: Department of Computer Engineering, Kwangwoon University, Seoul Metropolitan City, 01897, Republic of Korea.
authors.forename: Y
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon Metropolitan City, 34114, Republic of Korea.
authors.forename: S
authors.initials: S
authors.lastname: Jeong
authors.affiliation: Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon Metropolitan City, 34141, Republic of Korea. bsbae@kaist.ac.kr.
authors.forename: B-S
authors.initials: BS
authors.lastname: Bae
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan Metropolitan City, 44919, Republic of Korea. jangung@unist.ac.kr.
authors.forename: J-U
authors.initials: JU
authors.lastname: Park