title: Side-Gated In2O3Nanowire Ferroelectric FETs for High-Performance Nonvolatile Memory Applications.
abstract: A new type of ferroelectric FET based on the single nanowireis demonstrated. The design of the side-gated architecture not only simplifies the manufacturing process but also avoids any postdeposition damage to the organic ferroelectric film. The devices exhibit excellent performances for nonvolatile memory applications, and the memory hysteresis can be effectively modulated by adjusting the side-gate geometries.
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Meng
authors.initials: M
authors.lastname: Su
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Zhenyu
authors.initials: Z
authors.lastname: Yang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Lei
authors.initials: L
authors.lastname: Liao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Xuming
authors.initials: X
authors.lastname: Zou
authors.affiliation: Department of Physics and Materials Science City University of Hong Kong Tat Chee Avenue Kowloon Hong Kong SAR China.
authors.forename: Johnny C
authors.initials: JC
authors.lastname: Ho
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Jingli
authors.initials: J
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China.
authors.forename: Jianlu
authors.initials: J
authors.lastname: Wang
authors.affiliation: National Laboratory for Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China.
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Xiangheng
authors.initials: X
authors.lastname: Xiao
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education Wuhan University Wuhan 430072 China.
authors.forename: Chuansheng
authors.initials: C
authors.lastname: Liu
authors.affiliation: Institute of Optoelectronic Display Fuzhou University Fuzhou 350002 China.
authors.forename: Tailiang
authors.initials: T
authors.lastname: Guo
keywords: In2O3 nanowires; P(VDF‐TrFE); ferroelectric memory; field‐effect transistors; side‐gated