title: High Fill Factors of Si Solar Cells Achieved by Using an Inverse Connection Between MOS and PN Junctions.
abstract: Fill factors (FFs) of ~0.87 have been obtained for crystalline Si (c-Si) solar cells based on Ag front contacts after rapid thermal annealing. The usual single PN junction model fails to explain the high FF result. A metal/oxide/semiconductor (MOS) junction at the emitter is found to be inversely connected to the PN one, and when its barrier height/e is close to the open-circuit voltage of the solar cell, very high FF is obtainable. In this work, although the open-circuit voltage (<580 mV) is not high here, the efficiency of c-Si solar cell still reaches the state-of-the-art value (>20 %) due to the high FF achieved.
authors.affiliation: Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai, 200433, China.|Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.
authors.forename: Liang-Xing
authors.initials: LX
authors.lastname: Wang
authors.affiliation: Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai, 200433, China.
authors.forename: Zhi-Quan
authors.initials: ZQ
authors.lastname: Zhou
authors.affiliation: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Tian-Ning
authors.initials: TN
authors.lastname: Zhang
authors.affiliation: Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Xin
authors.initials: X
authors.lastname: Chen
authors.affiliation: Department of Optical Science and Engineering, and Shanghai Ultra-Precision Optical Manufacturing Engineering Center, Fudan University, Shanghai, 200433, China. minglu55@fudan.edu.cn.
authors.forename: Ming
authors.initials: M
authors.lastname: Lu
keywords: Ag contact; Fill factor; MOS barrier; Si solar cell