title: Controllable growth of vertically aligned graphene on C-face SiC.
abstract: We investigated how to control the growth of vertically aligned graphene on C-face SiC by varying the processing conditions. It is found that, the growth rate scales with the annealing temperature and the graphene height is proportional to the annealing time. Temperature gradient and crystalline quality of the SiC substrates influence their vaporization. The partial vapor pressure is crucial as it can interfere with further vaporization. A growth mechanism is proposed in terms of physical vapor transport. The monolayer character of vertically aligned graphene is verified by Raman and X-ray absorption spectroscopy. With the processed samples, d0magnetism is realized and negative magnetoresistance is observed after Cu implantation. We also prove that multiple carriers exist in vertically aligned graphene.
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Department of Basic Science, Beijing Information Science and Technology University, Beijing 100192, China.
authors.forename: Lianlian
authors.initials: L
authors.lastname: Chen
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.|School of Physics, Dublin Institute of Technology, Dublin, Ireland.
authors.forename: Donovan
authors.initials: D
authors.lastname: Hilliard
authors.affiliation: School of Chemical Engineering, Sichuan University, Chengdu 610065, China.
authors.forename: Qing-Song
authors.initials: QS
authors.lastname: Huang
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.|Technische Universität Dresden, 01062 Dresden, Germany.
authors.forename: Fang
authors.initials: F
authors.lastname: Liu
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.|Technische Universität Dresden, 01062 Dresden, Germany.
authors.forename: Mao
authors.initials: M
authors.lastname: Wang
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Roman
authors.initials: R
authors.lastname: Böttger
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: René
authors.initials: R
authors.lastname: Hübner
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Alpha T
authors.initials: AT
authors.lastname: N'Diaye
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Elke
authors.initials: E
authors.lastname: Arenholz
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Viton
authors.initials: V
authors.lastname: Heera
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf, Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou