title: Sulfur ion concentration dependent morphological evolution of CdS thin films and its subsequent effect on photo-electrochemical performance.
abstract: The sulfur ion concentration dependent morphological evolution and its subsequent effect on photo-electrochemical properties of chemically synthesized CdS thin films have been systematically investigated. The plausible growth mechanism for the morphological evolution of CdS thin films due to a change in sulfur ion concentration has been proposed. Scanning electron micrographs (SEMs) reveal that the morphology of CdS thin films has been changed from spherical grains to vertically aligned nanoflakes by systematic control of sulfur ion concentration. This article elucidates the astute relationships between precursor concentrations, reaction rate and morphological evolution. The X-ray diffraction (XRD) patterns reveal the formation of hexagonal wurtzite CdS thin films with the preferred (002) orientation for CdS nanoflakes, which is further supported by the analysis of the high resolution transmission electron micrographs (HRTEMs). Optical absorption studies show a red shift in the absorption edge with an increase in sulfur concentration. The beneficial role of nanoflake formation is easily reflected in the photo-electrochemical performance. Improved solar cell performances are observed for CdS nanoflakes grown with a sulfur to cadmium ion concentration ratio of 4 (S : Cd = 4).
authors.affiliation: Departments of Materials Science and Engineering, Chonnam National University, Gwangju, 500-757, South Korea. jinhyeok@chonnam.ac.kr and GMD Arts, BW Commerce and Science College, Savitribai Phule Pune University, Sinnar, Nashik, Maharashtra, India.
authors.forename: Archana
authors.initials: A
authors.lastname: Kamble
authors.affiliation: National Centre for Nanosciences and Nanotechnology, University of Mumbai, Mumbai, Maharashtra, India. bhavmeet@gmail.com.
authors.forename: Bhavesh
authors.initials: B
authors.lastname: Sinha
authors.affiliation: Ultra-Precision Optics Research Center, Korea Photonics Technology Institute (KOPTI), Gwangju 500-779, South Korea.
authors.forename: Ganesh
authors.initials: G
authors.lastname: Agawane
authors.affiliation: Departments of Materials Science and Engineering, Chonnam National University, Gwangju, 500-757, South Korea. jinhyeok@chonnam.ac.kr.
authors.forename: Sharad
authors.initials: S
authors.lastname: Vanalakar
authors.affiliation: Departments of Materials Science and Engineering, Chonnam National University, Gwangju, 500-757, South Korea. jinhyeok@chonnam.ac.kr.
authors.forename: In Young
authors.initials: IY
authors.lastname: Kim
authors.affiliation: GMD Arts, BW Commerce and Science College, Savitribai Phule Pune University, Sinnar, Nashik, Maharashtra, India.
authors.forename: Jin Young
authors.initials: JY
authors.lastname: Kim
authors.affiliation: GMD Arts, BW Commerce and Science College, Savitribai Phule Pune University, Sinnar, Nashik, Maharashtra, India.
authors.forename: Sampat S
authors.initials: SS
authors.lastname: Kale
authors.affiliation: Thin Film Materials Laboratory, Department of Physics, Shivaji University, Kolhapur-416004, M.S., India. psp_phy@unishivaji.ac.in.
authors.forename: Pramod
authors.initials: P
authors.lastname: Patil
authors.affiliation: Departments of Materials Science and Engineering, Chonnam National University, Gwangju, 500-757, South Korea. jinhyeok@chonnam.ac.kr.
authors.forename: Jin Hyeok
authors.initials: JH
authors.lastname: Kim