title: Low-temperature atomic layer deposition of crystalline manganese oxide thin films.
abstract: We present a new low-temperature atomic layer deposition (ALD) process based on Mn2(CO)10and ozone as precursors to fabricate crystalline α-Mn2O3and Mn3O4thin films; the phase composition is controlled by the deposition temperature such that the former phase forms in the range 60-100 °C and the latter in the range 120-160 °C. In both cases an appreciably high growth rate of ∼1.2 Å per cycle is achieved. The spinel-structured Mn3O4thin films are shown to be ferrimagnetic with the transition temperature determined to be at ∼47 K.
authors.affiliation: Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Espoo, Finland. maarit.karppinen@aalto.fi.
authors.forename: Hua
authors.initials: H
authors.lastname: Jin
authors.affiliation: Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Espoo, Finland. maarit.karppinen@aalto.fi.
authors.forename: Dirk
authors.initials: D
authors.lastname: Hagen
authors.affiliation: Laboratory of Inorganic Chemistry, Department of Chemistry, Aalto University, P.O. Box 16100, FI-00076 AALTO, Espoo, Finland. maarit.karppinen@aalto.fi.
authors.forename: Maarit
authors.initials: M
authors.lastname: Karppinen