title: Size-tunable synthesis of monolayer MoS2nanoparticles and their applications in non-volatile memory devices.
abstract: We report the CVD synthesis of a monolayer of MoS2nanoparticles such that the nanoparticle size was controlled over the range 5-100 nm and the chemical potential of sulfur was modified, both by controlling the hydrogen flow rate during the CVD process. As the hydrogen flow rate was increased, the reaction process of sulfur changed from a "sulfiding" process to a "sulfo-reductive" process, resulting in the growth of smaller MoS2nanoparticles on the substrates. The size control, crystalline quality, chemical configuration, and distribution uniformity of the CVD-grown monolayer MoS2nanoparticles were confirmed. The growth of the MoS2nanoparticles at different edge states was studied using density functional theory calculations to clarify the size-tunable mechanism. A non-volatile memory device fabricated using the CVD-grown size-controlled 5 nm monolayer MoS2nanoparticles as a floating gate showed a good memory window of 5-8 V and an excellent retention period of a decade.
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea. leesj@skku.edu.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Jeon
authors.affiliation: Department of Energy Systems Engineering, DGIST, Daegu 42988, Korea. yhjang@dgist.ac.kr and School of Materials Science and Engineering, GIST, Gwangju 61005, Korea.
authors.forename: Jinhee
authors.initials: J
authors.lastname: Lee
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Gwangwe
authors.initials: G
authors.lastname: Yoo
authors.affiliation: School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Jin-Hong
authors.initials: JH
authors.lastname: Park
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Geun Young
authors.initials: GY
authors.lastname: Yeom
authors.affiliation: Department of Energy Systems Engineering, DGIST, Daegu 42988, Korea. yhjang@dgist.ac.kr and School of Materials Science and Engineering, GIST, Gwangju 61005, Korea.
authors.forename: Yun Hee
authors.initials: YH
authors.lastname: Jang
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea. leesj@skku.edu and School of Electronics and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee