title: Synthesis, properties and applications of 2D layered MIIIXVI(M = Ga, In; X = S, Se, Te) materials.
abstract: Group III-VI compounds MIIIXVI(M = Ga, In; X = S, Se, Te) are one class of important 2D layered materials and are currently attracting increasing interest due to their unique electronic and optoelectronic properties and their great potential applications in various other fields. Similar to 2D layered transition metal dichalcogenides (TMDs), MIIIXVIalso have the significant merits of ultrathin thickness, ultrahigh surface-to-volume ratio, and high compatibility with flexible devices. More impressively, in contrast with TMDCs, MIIIXVIdemonstrate many superior properties, such as direct band gap electronic structure, high carrier mobility, rare p-type electronic behaviors, high charge density, and so on. These unique characteristics cause high-performance device applications in electronics, optoelectronics, and optics. In this review, we aim to provide a summary of the state-of-the-art of research activities in 2D layered MIIIXVImaterials. The scope of the review covers the synthesis and properties of 2D layered MIIIXVImaterials and their van der Waals heterostructures. We especially focus on the applications in electronics and optoelectronics. Moreover, the review concludes with some perspectives on future developments in this field.
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Kai
authors.initials: K
authors.lastname: Xu
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Yin
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Yun
authors.initials: Y
authors.lastname: Huang
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Tofik Ahmed
authors.initials: TA
authors.lastname: Shifa
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn.
authors.forename: Junwei
authors.initials: J
authors.lastname: Chu
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Wang
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn and University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Ruiqing
authors.initials: R
authors.lastname: Cheng
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn.
authors.forename: Zhenxing
authors.initials: Z
authors.lastname: Wang
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing 100190, China. hej@nanoctr.cn.
authors.forename: Jun
authors.initials: J
authors.lastname: He