title: Molecular beam epitaxy of InAs nanowires in SiO2nanotube templates: challenges and prospects for integration of III-Vs on Si.
abstract: Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates. Herein, we report on the challenges and prospects of molecular beam epitaxy of InAs nanowires in SiO2/Si nanotube templates. We show how and under which conditions the nanowire growth is initiated by In-assisted vapor-liquid-solid growth enabled by the local conditions inside the nanotube template. The conditions for high yield of vertical nanowires are investigated in terms of the nanotube depth, diameter and V/III flux ratios. We present a model that further substantiates our findings. This work opens new perspectives for monolithic integration of III-Vs on the silicon platform enabling new applications in the electronics, optoelectronics and energy harvesting arena.
authors.affiliation: Laboratory of Semiconductor Materials, Institute of Materials, Ecole Polytechnique Fédérale de Lausanne (EPFL), 1015 Lausanne, Switzerland.
authors.forename: Jelena
authors.initials: J
authors.lastname: Vukajlovic-Plestina
authors.forename: Vladimir G
authors.initials: VG
authors.lastname: Dubrovskii
authors.forename: Gözde
authors.initials: G
authors.lastname: Tütüncuoǧlu
authors.forename: Heidi
authors.initials: H
authors.lastname: Potts
authors.forename: Ruben
authors.initials: R
authors.lastname: Ricca
authors.forename: Frank
authors.initials: F
authors.lastname: Meyer
authors.forename: Federico
authors.initials: F
authors.lastname: Matteini
authors.forename: Jean-Baptiste
authors.initials: JB
authors.lastname: Leran
authors.forename: Anna Fontcuberta
authors.initials: AF
authors.lastname: I Morral