title: Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites.
abstract: Organic-inorganic hybrid perovskites have unique electronic properties in which deep level defects are rarely formed. This unique defect characteristic is the source of the long carrier diffusion length. This theoretical study shows what causes this characteristic formation of shallow level defects in lead tri-halide perovskites. Comparative studies between iodides and other halides showed that deep level defect states were generated for Cl based perovskites. Longer Pb-halide bond lengths and narrower band gaps are beneficial for preventing deep level defect states. Additionally, our study shows that the formation of shallow level defects does not change even when the lattice structures of the perovskites do not reach their equilibrium structures.
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Ltd., Yongin-Si, Gyeonggi-Do 446-712, Korea.
authors.forename: Jongseob
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Hanbat National University, 125 Dongseo-daero, Yuseong-Gu, Daejeon, 34014, Korea. kiha.hong@hanbat.ac.kr.
authors.forename: Choong-Heui
authors.initials: CH
authors.lastname: Chung
authors.affiliation: Department of Materials Science and Engineering, Hanbat National University, 125 Dongseo-daero, Yuseong-Gu, Daejeon, 34014, Korea. kiha.hong@hanbat.ac.kr.
authors.forename: Ki-Ha
authors.initials: KH
authors.lastname: Hong