title: Morphology-induced phonon spectra of CdSe/CdS nanoplatelets: core/shell vs. core-crown.
abstract: Recently developed two-dimensional colloidal semiconductor nanocrystals, or nanoplatelets (NPLs), extend the palette of solution-processable free-standing 2D nanomaterials of high performance. Growing CdSe and CdS parts subsequently in either side-by-side or stacked manner results in core-crown or core/shell structures, respectively. Both kinds of heterogeneous NPLs find efficient applications and represent interesting materials to study the electronic and lattice excitations and interaction between them under strong one-directional confinement. Here, we investigated by Raman and infrared spectroscopy the phonon spectra and electron-phonon coupling in CdSe/CdS core/shell and core-crown NPLs. A number of distinct spectral features of the two NPL morphologies are observed, which are further modified by tuning the laser excitation energy Eexcbetween in- and off-resonant conditions. The general difference is the larger number of phonon modes in core/shell NPLs and their spectral shifts with increasing shell thickness, as well as with Eexc. This behaviour is explained by strong mutual influence of the core and shell and formation of combined phonon modes. In the core-crown structure, the CdSe and CdS modes preserve more independent behaviour with only interface modes forming the phonon overtones with phonons of the core.
authors.affiliation: Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany. volodymyr.dzhagan@physik.tu-chemnitz.de and V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine.
authors.forename: V
authors.identifier: http://orcid.org/0000-0002-7839-9862
authors.initials: V
authors.lastname: Dzhagan
authors.affiliation: A.V. Rzhanov Institute of Semiconductor Physics, 630090 Novosibirsk, Russia and Novosibirsk State University, Pirogova street 2, 630090 Novosibirsk, Russia.
authors.forename: A G
authors.identifier: http://orcid.org/0000-0002-6774-6654
authors.initials: AG
authors.lastname: Milekhin
authors.affiliation: V.E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 03028 Kyiv, Ukraine.
authors.forename: M Ya
authors.initials: MY
authors.lastname: Valakh
authors.affiliation: Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: S
authors.initials: S
authors.lastname: Pedetti
authors.affiliation: Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: M
authors.initials: M
authors.lastname: Tessier
authors.affiliation: Laboratoire de Physique et d'Étude des Matériaux, PSL Research University, CNRS UMR 8213, Sorbonne Universités UPMC Univ Paris 06, ESPCI ParisTech, 10 rue Vauquelin, 75005 Paris, France.
authors.forename: B
authors.initials: B
authors.lastname: Dubertret
authors.affiliation: Semiconductor Physics, Technische Universität Chemnitz, D-09107 Chemnitz, Germany. volodymyr.dzhagan@physik.tu-chemnitz.de.
authors.forename: D R T
authors.initials: DR
authors.lastname: Zahn