title: Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks.
abstract: Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
authors.forename: Yoichi
authors.initials: Y
authors.lastname: Tanabe
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Yoshikazu
authors.initials: Y
authors.lastname: Ito
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Katsuaki
authors.initials: K
authors.lastname: Sugawara
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Daisuke
authors.initials: D
authors.lastname: Hojo
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
authors.forename: Mikito
authors.initials: M
authors.lastname: Koshino
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Takeshi
authors.initials: T
authors.lastname: Fujita
authors.affiliation: New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, 980-8579, Japan.
authors.forename: Tsutomu
authors.initials: T
authors.lastname: Aida
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Xiandong
authors.initials: X
authors.lastname: Xu
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Khuong Kim
authors.initials: KK
authors.lastname: Huynh
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.
authors.forename: Hidekazu
authors.initials: H
authors.lastname: Shimotani
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Tadafumi
authors.initials: T
authors.lastname: Adschiri
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.|WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Takahashi
authors.affiliation: Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan.|WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.
authors.forename: Katsumi
authors.initials: K
authors.lastname: Tanigaki
authors.affiliation: Department of Physics, University of Tokyo, Hongo, Tokyo, 113-0033, Japan.
authors.forename: Hideo
authors.initials: H
authors.lastname: Aoki
authors.affiliation: WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan.|CREST, Japan Science and Technology Agency, Saitama, 332-0012, Japan.|Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, 21214, USA.
authors.forename: Mingwei
authors.initials: M
authors.lastname: Chen
keywords: 3D nanoporous materials; CVD growth; electric transport; field effect transistors; graphene