title: n-MoS2/p-Si Solar Cells with Al2O3Passivation for Enhanced Photogeneration.
abstract: Molybdenum disulfide (MoS2) has recently emerged as a promising candidate for fabricating ultrathin-film photovoltaic devices. These devices exhibit excellent photovoltaic performance, superior flexibility, and low production cost. Layered MoS2deposited on p-Si establishes a built-in electric field at MoS2/Si interface that helps in photogenerated carrier separation for photovoltaic operation. We propose an Al2O3-based passivation at the MoS2surface to improve the photovoltaic performance of bulklike MoS2/Si solar cells. Interestingly, it was observed that Al2O3passivation enhances the built-in field by reduction of interface trap density at surface. Our device exhibits an improved power conversion efficiency (PCE) of 5.6%, which to our knowledge is the highest efficiency among all bulklike MoS2-based photovoltaic cells. The demonstrated results hold the promise for integration of bulklike MoS2films with Si-based electronics to develop highly efficient photovoltaic cells.
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Atteq Ur
authors.initials: AU
authors.lastname: Rehman
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Muhammad Farooq
authors.initials: MF
authors.lastname: Khan
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Muhammad Arslan
authors.initials: MA
authors.lastname: Shehzad
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Sajjad
authors.initials: S
authors.lastname: Hussain
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Muhammad Fahad
authors.initials: MF
authors.lastname: Bhopal
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Sang Hee
authors.initials: SH
authors.lastname: Lee
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Jonghwa
authors.initials: J
authors.lastname: Eom
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Yongho
authors.initials: Y
authors.lastname: Seo
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Jongwan
authors.initials: J
authors.lastname: Jung
authors.affiliation: Green Strategic Energy Research Institute, Department of Electronic Engineering, ‡Department of Physics and Graphene Research Institute, and §Faculty of Nanotechnology and Advanced Materials Engineering and Graphene Research Institute, Sejong University , 98 Gunja-dong, Gwangjin-gu, Seoul 143-747, Republic of Korea.
authors.forename: Soo Hong
authors.initials: SH
authors.lastname: Lee
keywords: MoS2; built-in electric field; interface density; photovoltaic cell; surface passivation