title: Highly stable, extremely high-temperature, nonvolatile memory based on resistance switching in polycrystalline Pt nanogaps.
abstract: Highly stable, nonvolatile, high-temperature memory based on resistance switching was realized using a polycrystalline platinum (Pt) nanogap. The operating temperature of the memory can be drastically increased by the presence of a sharp-edged Pt crystal facet in the nanogap. A short distance between the facet edges maintains the nanogap shape at high temperature, and the sharp shape of the nanogap densifies the electric field to maintain a stable current flow due to field migration. Even at 873 K, which is a significantly higher temperature than feasible for conventional semiconductor memory, the nonvolatility of the proposed memory allows stable ON and OFF currents, with fluctuations of less than or equal to 10%, to be maintained for longer than eight hours. An advantage of this nanogap scheme for high-temperature memory is its secure operation achieved through the assembly and disassembly of a Pt needle in a high electric field.
authors.affiliation: Department of Technology of Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Suga
authors.affiliation: Department of Technology of Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan.
authors.forename: Hiroya
authors.initials: H
authors.lastname: Suzuki
authors.affiliation: Department of Technology of Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan.
authors.forename: Yuma
authors.initials: Y
authors.lastname: Shinomura
authors.affiliation: Department of Technology of Chiba Institute of Technology, 2-17-1 Tsudanuma, Narashino, Chiba 275-0016, Japan.
authors.forename: Shota
authors.initials: S
authors.lastname: Kashiwabara
authors.affiliation: International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kazuhito
authors.initials: K
authors.lastname: Tsukagoshi
authors.affiliation: Nanomaterials Research Institute, Department of Materials and Chemistry, National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1 Tsukuba, Ibaraki 305-8562, Japan.
authors.forename: Tetsuo
authors.initials: T
authors.lastname: Shimizu
authors.affiliation: Nanoelectronics Research Institute, Department of Electronics and Manufacturing, National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1 Tsukuba, Ibaraki 305-8562, Japan.
authors.forename: Yasuhisa
authors.initials: Y
authors.lastname: Naitoh