title: Laser-Assisted Focused He+Ion Beam Induced Etching with and without XeF2Gas Assist.
abstract: Focused helium ion (He+) milling has been demonstrated as a high-resolution nanopatterning technique; however, it can be limited by its low sputter yield as well as the introduction of undesired subsurface damage. Here, we introduce pulsed laser- and gas-assisted processes to enhance the material removal rate and patterning fidelity. A pulsed laser-assisted He+milling process is shown to enable high-resolution milling of titanium while reducing subsurface damage in situ. Gas-assisted focused ion beam induced etching (FIBIE) of Ti is also demonstrated in which the XeF2precursor provides a chemical assist for enhanced material removal rate. Finally, a pulsed laser-assisted and gas-assisted FIBIE process is shown to increase the etch yield by ∼9× relative to the pure He+sputtering process. These He+induced nanopatterning techniques improve material removal rate, in comparison to standard He+sputtering, while simultaneously decreasing subsurface damage, thus extending the applicability of the He+probe as a nanopattering tool.
authors.affiliation: Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.
authors.forename: Michael G
authors.initials: MG
authors.lastname: Stanford
authors.affiliation: Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.
authors.forename: Kyle
authors.initials: K
authors.lastname: Mahady
authors.affiliation: Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.
authors.forename: Brett B
authors.initials: BB
authors.lastname: Lewis
authors.affiliation: Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.|Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Jason D
authors.initials: JD
authors.lastname: Fowlkes
authors.affiliation: Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States.
authors.forename: Shida
authors.initials: S
authors.lastname: Tan
authors.affiliation: Intel Corporation , MS: SC9-68, 2200 Mission College Blvd., Santa Clara, California 95054, United States.
authors.forename: Richard
authors.initials: R
authors.lastname: Livengood
authors.affiliation: Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States.
authors.forename: Gregory A
authors.initials: GA
authors.lastname: Magel
authors.affiliation: Waviks Inc. , 10330 Markison Road, Dallas, Texas 75238, United States.
authors.forename: Thomas M
authors.initials: TM
authors.lastname: Moore
authors.affiliation: Department of Materials Science and Engineering, University of Tennessee , Knoxville, Tennessee 37996, United States.|Center for Nanophase Materials Sciences, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Philip D
authors.initials: PD
authors.lastname: Rack
keywords: XeF2; focused ion beam induced etching; helium ion; laser-assisted etching; nanofabrication; titanium