title: The rectifying and negative differential resistance effects in graphene/h-BN nanoribbon heterojunctions.
abstract: We investigate the electronic transport properties of four types of lateral graphene/h-BN nanoribbon heterojunctions using the non-equilibrium Green's function method in combination with the density functional theory. The results show that the heterojunction displays an interesting rectifying effect when the interface has a left-right type structure, while a pronounced negative differential resistance (NDR) effect when the interface has an up-down type structure. Moreover, when the interface of the heterojunction has a left-bank or right-bank type structure, it presents the rectifying (with a larger rectification ratio) and NDR effects. This work is helpful to further construct and prepare a nanodevice based on the graphene/h-BN heterojunction materials according to the proposed structures.
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn.
authors.forename: Yipeng
authors.initials: Y
authors.lastname: An
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn.
authors.forename: Mengjun
authors.initials: M
authors.lastname: Zhang
authors.affiliation: School of Chemistry and Chemical Engineering, Henan Normal University, Xinxiang 453007, China. dpengwu@126.com.
authors.forename: Dapeng
authors.initials: D
authors.lastname: Wu
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn.
authors.forename: Tianxing
authors.initials: T
authors.lastname: Wang
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn.
authors.forename: Zhaoyong
authors.initials: Z
authors.lastname: Jiao
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn.
authors.forename: Congxin
authors.initials: C
authors.lastname: Xia
authors.affiliation: College of Physics and Materials Science, Henan Normal University, Xinxiang 453007, China. ypan@htu.edu.cn and Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Zhaoming
authors.initials: Z
authors.lastname: Fu
authors.affiliation: Department of Physics and Astronomy & NanoSEC, University of Georgia, Athens, GA 30602, USA.
authors.forename: Kun
authors.initials: K
authors.lastname: Wang