title: Shape and phase evolution from CsPbBr3perovskite nanocubes to tetragonal CsPb2Br5nanosheets with an indirect bandgap.
abstract: Tetragonal CsPb2Br5nanosheets were obtained by an oriented attachment of orthorhombic CsPbBr3nanocubes, involving a lateral shape evolution from octagonal to square. Meanwhile, the experimental results, together with DFT simulation results, indicated that the tetragonal CsPb2Br5is an indirect bandgap semiconductor that is PL-inactive with a bandgap of 2.979 eV.
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Guopeng
authors.initials: G
authors.lastname: Li
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Zhifeng
authors.initials: Z
authors.lastname: Zhu
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Yajing
authors.initials: Y
authors.lastname: Chang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Ting
authors.initials: T
authors.lastname: Zhang
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Zihang
authors.initials: Z
authors.lastname: Song
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui 230009, P. R. China. apjiang@hfut.edu.cn.
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang