title: Reconfigurable van der Waals Heterostructured Devices with Metal-Insulator Transition.
abstract: Atomically thin two-dimensional (2D) materials range from semimetallic graphene to insulating hexagonal boron nitride to semiconducting transition-metal dichalcogenides. Recently, metal-insulator-semiconductor field effect transistors built from these 2D elements were studied for flexible and transparent electronics. However, to induce ambipolar characteristics for alternative power-efficient circuitry, ion-gel gating is often employed for high capacitive coupling, limiting stable operation at ambient conditions. Here, we report reconfigurable MoTe2optoelectronic transistors with all 2D components, where the device can be reconfigured by both drain and gate voltages. Eight different configurations for each fixed voltage are spatially resolved by scanning photocurrent microscopy. In addition, metal-insulator transitions are observed in both electron and hole carriers under 2 V due to strong Coulomb interaction in the system. Furthermore, the vertical tunneling photocurrent through multiple van der Waals layers between the gate and source contacts is measured. Our reconfigurable devices offer potential building blocks for system-on-a-chip optoelectronics.
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Jinseong
authors.initials: J
authors.lastname: Heo
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Heejeong
authors.initials: H
authors.lastname: Jeong
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Yeonchoo
authors.initials: Y
authors.lastname: Cho
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Kiyoung
authors.initials: K
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Seunggeol
authors.initials: S
authors.lastname: Nam
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Eun-Kyu
authors.initials: EK
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Sangyeob
authors.initials: S
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Hyangsook
authors.initials: H
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Sungwoo
authors.initials: S
authors.lastname: Hwang
authors.affiliation: Samsung Advanced Institute of Technology, Samsung Electronics Co., Suwon-si 16678, Korea.
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
keywords: MoTe2; metal−insulator transition; reconfigurable; tunneling photocurrent; van der Waals heterostructures