title: Gate-tunable diode-like current rectification and ambipolar transport in multilayer van der Waals ReSe2/WS2p-n heterojunctions.
abstract: Vertically stacked van der Waals (vdW) heterojunctions of two-dimensional (2D) transition metal dichalcogenides (TMDs) have attracted a great deal of attention due to their fascinating properties. In this work, we report two important gate-tunable phenomena in new artificial vdW p-n heterojunctions created by vertically stacking p-type multilayer ReSe2and n-type multilayer WS2: (1) well-defined strong gate-tunable diode-like current rectification across the p-n interface is observed, and the tunability of the electronic processes is attributed to the tunneling-assisted interlayer recombination induced by majority carriers across the vdW interface; (2) the distinct ambipolar behavior under gate voltage modulation both at forward and reverse bias voltages is found in the vdW ReSe2/WS2heterojunction transistors and a corresponding transport model is proposed for the tunable polarity behaviors. The findings may provide some new opportunities for building nanoscale electronic and optoelectronic devices.
authors.affiliation: The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China and CAS Center of Excellence for Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China. liuq@nanoctr.cn.
authors.forename: Cong
authors.initials: C
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Beihang University, Beijing 100191, China.
authors.forename: Shengxue
authors.initials: S
authors.lastname: Yang
authors.affiliation: Department of Physics, Henan Normal University, Xinxiang 453007, China.
authors.forename: Wenqi
authors.initials: W
authors.lastname: Xiong
authors.affiliation: Department of Physics, Henan Normal University, Xinxiang 453007, China.
authors.forename: Congxin
authors.initials: C
authors.lastname: Xia
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA. sefaattin.tongay@asu.edu.
authors.forename: Hui
authors.initials: H
authors.lastname: Cai
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA. sefaattin.tongay@asu.edu.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. jbli@semi.ac.cn.
authors.forename: Xiaoting
authors.initials: X
authors.lastname: Wang
authors.affiliation: The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China.
authors.forename: Xinzheng
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. jbli@semi.ac.cn.
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Wei
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ 85287, USA. sefaattin.tongay@asu.edu.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, Beijing 100083, China. jbli@semi.ac.cn.
authors.forename: Jingbo
authors.initials: J
authors.lastname: Li
authors.affiliation: The MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Institute of Applied Physics, Nankai University, Tianjin 300457, China and CAS Center of Excellence for Nanoscience, CAS Key Laboratory of Nanosystem and Hierarchical Fabrication, National Center for Nanoscience and Technology, Beijing 100190, China. liuq@nanoctr.cn.
authors.forename: Qian
authors.initials: Q
authors.lastname: Liu