title: Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.
abstract: Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO3film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>104s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
authors.forename: Kai
authors.initials: K
authors.lastname: Qian
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
authors.forename: Guofa
authors.initials: G
authors.lastname: Cai
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
authors.forename: Viet Cuong
authors.initials: VC
authors.lastname: Nguyen
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
authors.forename: Tupei
authors.initials: T
authors.lastname: Chen
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, Singapore , 639798.
authors.forename: Pooi See
authors.initials: PS
authors.lastname: Lee
keywords: CAFM; XPS; ex situ TEM; transparent resistive memory; tungsten oxide