title: Design and fabrication of high-performance diamond triple-gate field-effect transistors.
abstract: The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which are fabricated simultaneously on the same substrate. The triple-gate MOSFET's output current (174.2 mA mm-1) is much higher than that of the planar-type device (45.2 mA mm-1), and the on/off ratio and subthreshold swing are more than 108and as low as 110 mV dec-1, respectively. The fabrication of these H-diamond triple-gate MOSFETs will drive diamond electronic device development forward towards practical applications.
authors.affiliation: International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Jiangwei
authors.initials: J
authors.lastname: Liu
authors.affiliation: Nanofabrication Platform, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Hirotaka
authors.initials: H
authors.lastname: Ohsato
authors.affiliation: International Center for Young Scientists, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Xi
authors.initials: X
authors.lastname: Wang
authors.affiliation: Optical and Electronic Materials Unit, NIMS, 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Meiyong
authors.initials: M
authors.lastname: Liao
authors.affiliation: Research Network and Facility Services Division, NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047, Japan.
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Koide