title: Comparative study of photoluminescence from In0.3Ga0.7As/GaAs surface and buried quantum dots.
abstract: The optical properties of In0.3Ga0.7As/GaAs surface quantum dots (SQDs) and buried QDs (BQDs) are investigated by photoluminescence (PL) measurements. The integrated PL intensity, linewidth, and lifetime of SQDs are significantly different from the BQDs both at room temperature and at low temperature. The differences in PL response, measured at both steady state and in transient, are attributed to carrier transfer between the surface states and the SQDs.
authors.affiliation: California NanoSystems Institute, University of California-Los Angeles, Los Angeles, CA 90095, USA. School of Physics and Electronic Information Engineering, Henan Polytechnic University, Jiaozuo 454000, People's Republic of China.
authors.forename: Guodong
authors.initials: G
authors.lastname: Wang
authors.forename: Baolai
authors.initials: B
authors.lastname: Liang
authors.forename: Bor-Chau
authors.initials: BC
authors.lastname: Juang
authors.forename: Aparna
authors.initials: A
authors.lastname: Das
authors.forename: Mukul C
authors.initials: MC
authors.lastname: Debnath
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.forename: Morgan E
authors.initials: ME
authors.lastname: Ware
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo