title: Bright Perovskite Nanocrystal Films for Efficient Light-Emitting Devices.
abstract: The high photoluminescence efficiency, high color purity, and easy tunable bandgap make inorganic perovskite nanocrystals very attractive in luminescent display applications. Here, we report a color-saturated, red light-emitting diode (LED) using an inverted organic/inorganic hybrid structure and perovskite nanocrystals. We demonstrated that through a simple post treatment to the perovskite nanocrystals with polyethylenimine, the surface defects of the perovskite nanocrystals could be well passivated, leading to great enhancements on their absolute photoluminescence quantum yield and photoluminescence lifetime. Through using a well-passivated perovskite nanocrystal film and optimizing the charge balance, we achieved an electroluminescence LED with a current efficiency of 3.4 cd A-1, corresponding to an external quantum efficiency (EQE) of 6.3%, which is the highest value reported among perovskite NC LEDs so far.
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Xiaoyu
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Chun
authors.initials: C
authors.lastname: Sun
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Hua
authors.initials: H
authors.lastname: Wu
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Changyin
authors.initials: C
authors.lastname: Ji
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Yahui
authors.initials: Y
authors.lastname: Chuai
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Wang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.
authors.forename: Shanpeng
authors.initials: S
authors.lastname: Wen
authors.affiliation: National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
authors.forename: Chunfeng
authors.initials: C
authors.lastname: Zhang
authors.affiliation: State Key Laboratory on Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University , Changchun 130012, China.|Department of Chemistry and Physics, Louisiana State University , Shreveport, Louisiana 71115, United States.
authors.forename: William W
authors.initials: WW
authors.lastname: Yu