title: Stability and its mechanism in Ag/CoOx/Ag interface-type resistive switching device.
abstract: Stability is an important issue for the application of resistive switching (RS) devices. In this work, the endurance and retention properties of Ag/CoOx/Ag interface-type RS device were investigated. This device exhibits rectifying I-V curve, multilevel storage states and retention decay behavior, which are all related to the Schottky barrier at the interface. The device can switch for thousands of cycles without endurance failure and shows narrow resistance distributions with relatively low fluctuation. However, both the high and low resistance states spontaneously decay to an intermediate resistance state during the retention test. This retention decay phenomenon is due to the short lifetime τ (τ = 0.5 s) of the metastable pinning effect caused by the interface states. The data analysis indicated that the pinning effect is dependent on the depth and density of the interface state energy levels, which determine the retention stability and the switching ratio, respectively. This suggests that an appropriate interface structure can improve the stability of the interface-type RS device.
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Jianbo
authors.initials: J
authors.lastname: Fu
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Muxin
authors.initials: M
authors.lastname: Hua
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Shilei
authors.initials: S
authors.lastname: Ding
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Xuegang
authors.initials: X
authors.lastname: Chen
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Rui
authors.initials: R
authors.lastname: Wu
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Shunquan
authors.initials: S
authors.lastname: Liu
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Jingzhi
authors.initials: J
authors.lastname: Han
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Changsheng
authors.initials: C
authors.lastname: Wang
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Honglin
authors.initials: H
authors.lastname: Du
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.
authors.forename: Yingchang
authors.initials: Y
authors.lastname: Yang
authors.affiliation: State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, P.R. China.|Collaborative Innovation Center of Quantum Matter, Beijing, P.R. China.
authors.forename: Jinbo
authors.initials: J
authors.lastname: Yang