title: Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.
abstract: Negative-SET behavior is observed in various cation-based memories, which degrades the device reliability. Transmission electron microscopy results demonstrate the behavior is caused by the overgrowth of the conductive filament (CF) into the Pt electrode. The CF overgrowth phenomenon is suppressed and the negative-SET behavior is eliminated by inserting an impermeable graphene layer. The graphene-based devices show high reliability and satisfying performance.
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Sen
authors.initials: S
authors.lastname: Liu
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Nianduan
authors.initials: N
authors.lastname: Lu
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Zhao
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xu
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Writam
authors.initials: W
authors.lastname: Banerjee
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Hangbing
authors.initials: H
authors.lastname: Lv
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Shibing
authors.initials: S
authors.lastname: Long
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.
authors.forename: Qingjiang
authors.initials: Q
authors.lastname: Li
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.|Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing, 210009, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
keywords: cation-based memory; graphene; impenetrability; nanofilaments; resistive switching behavior