title: Graphene-β-Ga2O3Heterojunction for Highly Sensitive Deep UV Photodetector Application.
abstract: A deep UV light photodetector is assembled by coating multilayer graphene on beta-gallium oxide (β-Ga2O3) wafer. Optoelectronic analysis reveals that the heterojunction device is virtually blind to light illumination with wavelength longer than 280 nm, but is highly sensitive to 254 nm light with very good stability and reproducibility.
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Wei-Yu
authors.initials: WY
authors.lastname: Kong
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Guo-An
authors.initials: GA
authors.lastname: Wu
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Kui-Yuan
authors.initials: KY
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Teng-Fei
authors.initials: TF
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Yi-Feng
authors.initials: YF
authors.lastname: Zou
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Dan-Dan
authors.initials: DD
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui, 230009, P. R. China.
authors.forename: Lin-Bao
authors.initials: LB
authors.lastname: Luo
keywords: Schottky junction; deep UV light photodetector; graphene; responsivity; wide bandgap