title: Charge Carrier Dynamics and Mobility Determined by Time-Resolved Terahertz Spectroscopy on Films of Nano-to-Micrometer-Sized Colloidal Tin(II) Monosulfide.
abstract: Tin(II) monosulfide (SnS) is a semiconductor material with an intermediate band gap, high absorption coefficient in the visible range, and earth abundant, non-toxic constituent elements. For these reasons, SnS has generated much interest for incorporation into optoelectronic devices, but little is known concerning the charge carrier dynamics, especially as measured by optical techniques. Here, as opposed to prior studies of vapor deposited films, phase-pure colloidal SnS was synthesized by solution chemistry in three size regimes, ranging from nanometer- to micron-scale (SnS small nanoparticles, SnS medium 2D nanosheets, and SnS large 2D μm-sheets), and evaluated by time-resolved terahertz spectroscopy (TRTS); an optical, non-contact probe of the photoconductivity. Dropcast films of the SnS colloids were studied by TRTS and compared to both thermally annealed films and dispersed suspensions of the same colloids. TRTS results revealed that the micron-scale SnS crystals and all of the annealed films undergo decay mechanisms during the first 200 ps following photoexcitation at 800 nm assigned to hot carrier cooling and carrier trapping. The charge carrier mobility of both the dropcast and annealed samples depends strongly on the size of the constituent colloids. The mobility of the SnS colloidal films, following the completion of the initial decays, ranged from 0.14 cm2/V·s for the smallest SnS crystals to 20.3 cm2/V·s for the largest. Annealing the colloidal films resulted in a ~ 20 % improvement in mobility for the large SnS 2D μm-sheets and a ~ 5-fold increase for the small nanoparticles and medium nanosheets.
authors.affiliation: Radiation Physics Division, National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, Maryland, 20899, United States.
authors.forename: Brian G
authors.initials: BG
authors.lastname: Alberding
authors.affiliation: Engineering Physics Division, National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, Maryland, 20899, United States.
authors.forename: Adam J
authors.initials: AJ
authors.lastname: Biacchi
authors.affiliation: Engineering Physics Division, National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, Maryland, 20899, United States.
authors.forename: Angela R Hight
authors.initials: AR
authors.lastname: Walker
authors.affiliation: Radiation Physics Division, National Institute of Standards and Technology (NIST), 100 Bureau Drive, Gaithersburg, Maryland, 20899, United States.
authors.forename: Edwin J
authors.initials: EJ
authors.lastname: Heilweil