title: MoS2/Rubrene van der Waals Heterostructure: Toward Ambipolar Field-Effect Transistors and Inverter Circuits.
abstract: 2D transition metal dichalcogenides are promising channel materials for the next-generation electronic device. Here, vertically 2D heterostructures, so called van der Waals solids, are constructed using inorganic molybdenum sulfide (MoS2) few layers and organic crystal - 5,6,11,12-tetraphenylnaphthacene (rubrene). In this work, ambipolar field-effect transistors are successfully achieved based on MoS2and rubrene crystals with the well balanced electron and hole mobilities of 1.27 and 0.36 cm2V-1s-1, respectively. The ambipolar behavior is explained based on the band alignment of MoS2and rubrene. Furthermore, being a building block, the MoS2/rubrene ambipolar transistors are used to fabricate CMOS (complementary metal oxide semiconductor) inverters that show good performance with a gain of 2.3 at a switching threshold voltage of -26 V. This work paves a way to the novel organic/inorganic ultrathin heterostructure based flexible electronics and optoelectronic devices.
authors.affiliation: School of Materials Science and Engineering, Shaanxi Normal University, 710119, Xi'an, China.|Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Xuexia
authors.initials: X
authors.lastname: He
authors.affiliation: Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: WaiLeong
authors.initials: W
authors.lastname: Chow
authors.affiliation: Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: BengKang
authors.initials: B
authors.lastname: Tay
authors.affiliation: Center for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
keywords: 2D materials; ambipolar; field-effect transistors; heterostructures; inverter circuits