title: UV-solvent annealing of PDMS-majority and PS-majority PS-b-PDMS block copolymer films.
abstract: The response of polystyrene-block-poly(dimethylsiloxane) (PS-b-PDMS) thin films to UV exposure during solvent vapor annealing is described, in order to improve their applicability in nanolithography and nanofabrication. Two BCPs were examined, one with the PS block as majority (fPS= 68%, Mn= 53 kg mol-1), the other with PDMS block as majority (fPDMS= 67%, Mn= 44 kg mol-1). A 5 min UV irradiation was applied during solvent vapor annealing which led to both partial crosslinking of the polymer and a small increase in the temperature of the annealing chamber. This approach was effective for improving the correlation length of the self-assembled microdomain arrays and in limiting subsequent flow of the PDMS in the PDMS-majority BCP to preserve the post-anneal morphology. Ordering and orientation of microdomains were controlled by directed self-assembly of the BCPs in trench substrates. Highly-ordered perpendicular nanochannel arrays were obtained in the PDMS-majority BCP.
authors.affiliation: Department of Materials Science and Engineering, MIT, Cambridge MA 02139, USA. Semiconductor R&D Center, Samsung Electronics, Hwasung-City, Gyeonggi-do, Korea.
authors.forename: Keehong
authors.initials: K
authors.lastname: Lee
authors.forename: Melissa
authors.initials: M
authors.lastname: Kreider
authors.forename: Wubin
authors.initials: W
authors.lastname: Bai
authors.forename: Li-Chen
authors.initials: LC
authors.lastname: Cheng
authors.forename: Saman Safari
authors.initials: SS
authors.lastname: Dinachali
authors.forename: Kun-Hua
authors.initials: KH
authors.lastname: Tu
authors.forename: Tao
authors.initials: T
authors.lastname: Huang
authors.forename: K
authors.initials: K
authors.lastname: Ntetsikas
authors.forename: G
authors.initials: G
authors.lastname: Liontos
authors.forename: A
authors.initials: A
authors.lastname: Avgeropoulos
authors.forename: C A
authors.initials: CA
authors.lastname: Ross