title: Enhancing electric-field control of ferromagnetism through nanoscale engineering of high-TcMnxGe1-xnanomesh.
abstract: Voltage control of magnetism in ferromagnetic semiconductor has emerged as an appealing solution to significantly reduce the power dissipation and variability beyond current CMOS technology. However, it has been proven to be very challenging to achieve a candidate with high Curie temperature (Tc), controllable ferromagnetism and easy integration with current Si technology. Here we report the effective electric-field control of both ferromagnetism and magnetoresistance in unique MnxGe1-xnanomeshes fabricated by nanosphere lithography, in which a Tcabove 400 K is demonstrated as a result of size/quantum confinement. Furthermore, by adjusting Mn doping concentration, extremely giant magnetoresistance is realized from ∼8,000% at 30 K to 75% at 300 K at 4 T, which arises from a geometrically enhanced magnetoresistance effect of the unique mesh structure. Our results may provide a paradigm for fundamentally understanding the high Tcin ferromagnetic semiconductor nanostructure and realizing electric-field control of magnetoresistance for future spintronic applications.
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Tianxiao
authors.initials: T
authors.lastname: Nie
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Jianshi
authors.initials: J
authors.lastname: Tang
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Xufeng
authors.initials: X
authors.lastname: Kou
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Yin
authors.initials: Y
authors.lastname: Gen
authors.affiliation: Institute of Materials Science and Engineering, National Central University, 300 Jung-Da Rd, Chung-Li 320, Taiwan.
authors.forename: Shengwei
authors.initials: S
authors.lastname: Lee
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Zhu
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Qinglin
authors.initials: Q
authors.lastname: He
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Li-Te
authors.initials: LT
authors.lastname: Chang
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Koichi
authors.initials: K
authors.lastname: Murata
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Yabin
authors.initials: Y
authors.lastname: Fan
authors.affiliation: Department of Electrical Engineering, Device Research Laboratory, University of California, Los Angeles, California 90095, USA.
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang