title: Facile Synthesis of Co9Se8Quantum Dots as Charge Traps for Flexible Organic Resistive Switching Memory Device.
abstract: Uniform Co9Se8quantum dots (CSQDs) were successfully synthesized through a facile solvothermal method. The obtained CSQDs with average size of 3.2 ± 0.1 nm and thickness of 1.8 ± 0.2 nm were demonstrated good stability and strong fluorescence under UV light after being easily dispersed in both of N,N-dimethylformamide (DMF) and deionized water. We demonstrated the flexible resistive switching memory device based on the hybridization of CSQDs and polyvinylpyrrolidone (PVP) (CSQDs-PVP). The device with the Al/CSQDs-PVP/Pt/poly(ethylene terephthalate) (PET) structure represented excellent switching parameters such as high ON/OFF current ratio, low operating voltages, good stability, and flexibility. The flexible resistive switching memory device based on hybridization of CSQDs and PVP has a great potential to be used in flexible and high-performance memory applications.
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China.|Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Nonferrous Metals Chemistry and Resources Utilization of Gansu Province and State Key Laboratory of Applied Organic Chemistry, College of Chemistry and Chemical Engineering, Lanzhou University , Lanzhou 730000, P. R. China.
authors.forename: Benhua
authors.initials: B
authors.lastname: Xu
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China.|Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China.
authors.forename: Cunxu
authors.initials: C
authors.lastname: Gao
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China.|Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China.
authors.forename: Guilin
authors.initials: G
authors.lastname: Chen
authors.affiliation: Key Laboratory for Magnetism and Magnetic Materials of MOE, Lanzhou University , Lanzhou 730000, P. R. China.|Key Laboratory of Special Function Materials and Structure Design of MOE, Lanzhou University , Lanzhou 730000, P. R. China.
authors.forename: Meizhen
authors.initials: M
authors.lastname: Gao
keywords: Co9Se8; flexible organic memory; hybrid nanomaterials; quantum dots; resistive switching