title: Extremely Low-Cost, Scalable Oxide Semiconductors Employing Poly(acrylic acid)-Decorated Carbon Nanotubes for Thin-Film Transistor Applications.
abstract: In this study, we report for the first time a simple bar-coating process of soluble metal oxide semiconductors, consuming the 0.1 g of precursor solution in 4 in. sized devices with a cost of only $0.05. To resolve the issue of critical degradation in device performance observable in slow-evaporation-based film formation processes, we incorporate the unprecedentedly developed, poly(acrylic acid)-decorated multiwalled carbon nanotubes (MWNTs) in oxide semiconductors. It is demonstrated that a field-effect mobility is improved to the value of 7.34 cm2/(V s) (improvement by a factor of 2) without any critical variation in threshold voltage and on/off current ratio.
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.|Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea.
authors.forename: Gyu Ri
authors.initials: GR
authors.lastname: Hong
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Sun Sook
authors.initials: SS
authors.lastname: Lee
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Yejin
authors.initials: Y
authors.lastname: Jo
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, Korea.
authors.forename: Min Jun
authors.initials: MJ
authors.lastname: Choi
authors.affiliation: Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea.
authors.forename: Yun Chan
authors.initials: YC
authors.lastname: Kang
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Beyong-Hwan
authors.initials: BH
authors.lastname: Ryu
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul 04620, Korea.
authors.forename: Kwun-Bum
authors.initials: KB
authors.lastname: Chung
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Youngmin
authors.initials: Y
authors.lastname: Choi
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Sunho
authors.initials: S
authors.lastname: Jeong
keywords: carbon nanotube; low cost; oxide semiconductor; scalable; thin-film transistor