title: Dependency of tunneling magnetoresistance ratio on Pt seed-layer thickness for double MgO perpendicular magnetic tunneling junction spin-valves with a top Co2Fe6B2free layer ex-situ annealed at 400 °C.
abstract: For the double MgO based perpendicular magnetic tunneling junction (p-MTJ) spin-valves with a top Co2Fe6B2free layer ex situ annealed at 400 °C, the tunneling-magnetoresistance ratio (TMR) strongly depended on the platinum (Pt) seed layer thickness (tPt): it peaked (∼134%) at a specific tPt(3.3 nm). The TMR ratio was initially and slightly increased from 113%-134% by the enhancement of the magnetic moment of the Co2Fe6B2pinned layer when tPtincreased from 2.0-3.3 nm, and then rapidly decreased from 134%-38.6% by the degrading face-centered-cubic crystallinity of the MgO tunneling barrier when tPtincreased from 3.3-14.3 nm.
authors: MRAM Center, Department of Electronics and Computer Engineering, Hanyang University, Seoul, 04763, Korea. Epitaxial Engineering Department, SUMCO CORPORATION, 1007-62, Chitose-shi, Hokkaido 066-0051, Japan.
authors: Yasutaka
authors: Y
authors: Takemura
authors: Du-Yeong
authors: DY
authors: Lee
authors: Seung-Eun
authors: SE
authors: Lee
authors: Jea-Gun
authors: JG
authors: Park