title: Low power RF amplifier circuit for ion trap applications.
abstract: A low power RF amplifier circuit for ion trap applications is presented and described. The amplifier is based on a class-D half-bridge amplifier with a voltage mirror driver. The RF amplifier is composed of an RF class-D amplifier, an envelope modulator to ramp up the RF voltage during the ion analysis stage, a detector or amplitude demodulation circuit for sensing the output signal amplitude, and a feedback amplifier that linearizes the steady state output of the amplifier. The RF frequency is set by a crystal oscillator and the series resonant circuit is tuned to the oscillator frequency. The resonant circuit components have been chosen, in this case, to operate at 1 MHz. In testings, the class-D stage operated at a maximum of 78 mW at 1.1356 MHz producing 225 V peak.
authors: Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora C.P. 83000, Mexico.
authors: J R
authors: JR
authors: Noriega
authors: Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora C.P. 83000, Mexico.
authors: L A
authors: LA
authors: García-Delgado
authors: Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora C.P. 83000, Mexico.
authors: R
authors: R
authors: Gómez-Fuentes
authors: Departamento de Investigación en Física, Universidad de Sonora, Blvd. Luis Encinas y Rosales, Hermosillo, Sonora C.P. 83000, Mexico.
authors: A
authors: A
authors: García-Juárez