title: Deep-submicron Graphene Field-Effect Transistors with State-of-Art fmax.
abstract: In order to conquer the short-channel effects that limit conventional ultra-scale semiconductor devices, two-dimensional materials, as an option of ultimate thin channels, receive wide attention. Graphene, in particular, bears great expectations because of its supreme carrier mobility and saturation velocity. However, its main disadvantage, the lack of bandgap, has not been satisfactorily solved. As a result, maximum oscillation frequency (fmax) which indicates transistors' power amplification ability has been disappointing. Here, we present submicron field-effect transistors with specially designed low-resistance gate and excellent source/drain contact, and therefore significantly improved fmax. The fabrication was assisted by the advanced 8-inch CMOS back-end-of-line technology. A 200-nm-gate-length GFET achieves fT/fmax= 35.4/50 GHz. All GFET samples with gate lengths ranging from 200 nm to 400 nm possess fmax31-41% higher than fT, closely resembling Si n-channel MOSFETs at comparable technology nodes. These results re-strengthen the promise of graphene field-effect transistors in next generation semiconductor electronics.
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Department of Electrical and Computer Engineering, Rice University, Houston, TX 77005, USA.
authors: Hongming
authors: H
authors: Lyu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors: Qi
authors: Q
authors: Lu
authors: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China.
authors: Jinbiao
authors: J
authors: Liu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors: Xiaoming
authors: X
authors: Wu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors: Jinyu
authors: J
authors: Zhang
authors: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China.
authors: Junfeng
authors: J
authors: Li
authors: Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029 China.
authors: Jiebin
authors: J
authors: Niu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors: Zhiping
authors: Z
authors: Yu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, 100084 China.
authors: Huaqiang
authors: H
authors: Wu
authors: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.|Tsinghua National Laboratory for Information Science and Technology (TNList), Beijing, 100084 China.
authors: He
authors: H
authors: Qian