title: Enhancement of memory margins in the polymer composite of [6,6]-phenyl-C61-butyric acid methyl ester and polystyrene.
abstract: Memory devices based on composites of polystyrene (PS) and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM) were investigated with bistable resistive switching behavior. Current-voltage (I-V) curves for indium-tin-oxide (ITO)/PS + PCBM/Al devices with 33 wt% PCBM showed non-volatile, rewritable, flash memory properties with a maximum ON/OFF current ratio of 1 × 104, which was 100 times larger than the ON/OFF ratio of the device with 5 wt% PCBM. For ITO/PS + PCBM/Al devices with 33 wt% PCBM, the write-read-erase-read test cycles demonstrated the bistable devices with ON and OFF states at the same voltage. The programmable ON and OFF states endured up to 104read pulses and possessed a retention time of over 105s, indicative of the memory stability of the device. In the OFF state, the I-V curve at lower voltages up to 0.45 V was attributed to the thermionic emission mechanism, and the I-V characteristics in the applied voltage above 0.5 V dominantly followed the space-charge-limited-current behaviors. In the ON state, the curve in the applied voltage range was related to an Ohmic mechanism.
authors: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn and Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar 161006, China.
authors: Yanmei
authors: Y
authors: Sun
authors: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn and Communication and Electronics Engineering Institute, Qiqihar University, Qiqihar 161006, China.
authors: Junguo
authors: J
authors: Lu
authors: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors: Chunpeng
authors: C
authors: Ai
authors: HLJ Province Key Laboratories of Senior-education for Electronic Engineering, Heilongjiang University, Harbin, 150080, China. wendianzhong@hlju.edu.cn.
authors: Dianzhong
authors: D
authors: Wen
authors: School of Chemistry and Materials Science, Heilongjiang University, Harbin, 150080, China. xuduobai@hotmail.com.
authors: Xuduo
authors: X
authors: Bai