title: Interface Optoelectronics Engineering for Mechanically Stacked Tandem Solar Cells Based on Perovskite and Silicon.
abstract: Engineering of photonics for antireflection and electronics for extraction of the hole using 2.5 nm of a thin Au layer have been performed for two- and four-terminal tandem solar cells using CH3NH3PbI3perovskite (top cell) and p-type single crystal silicon (c-Si) (bottom cell) by mechanically stacking. Highly transparent connection multilayers of evaporated-Au and sputtered-ITO films were fabricated at the interface to be a point-contact tunneling junction between the rough perovskite and flat silicon solar cells. The mechanically stacked tandem solar cell with an optimized tunneling junction structure was ⟨perovskite for the top cell/Au (2.5 nm)/ITO (154 nm) stacked-on ITO (108 nm)/c-Si for the bottom cell⟩. It was confirmed the best efficiency of 13.7% and 14.4% as two- and four-terminal devices, respectively.
authors: Department of Materials Science and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo , 2167 Shosha, Himeji, Hyogo 671-2280, Japan.
authors: Hiroyuki
authors: H
authors: Kanda
authors: Department of Materials Science and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo , 2167 Shosha, Himeji, Hyogo 671-2280, Japan.|Department of Electrical Electronics Engineering, Karadeniz Technical University , 61080, Trabzon, Turkey.
authors: Abdullah
authors: A
authors: Uzum
authors: Energy Technology Laboratories, Osaka Gas Co., Ltd. , 6-19-9 Konohana-Ku, Osaka 554-0051, Japan.
authors: Hitoshi
authors: H
authors: Nishino
authors: Department of Molecular Engineering, Graduate School of Engineering, Kyoto University , Nishikyo-ku, Kyoto 615-8510, Japan.
authors: Tomokazu
authors: T
authors: Umeyama
authors: Department of Molecular Engineering, Graduate School of Engineering, Kyoto University , Nishikyo-ku, Kyoto 615-8510, Japan.|Institute for Integrated Cell-Material Sciences (WPI-iCeMS), Kyoto University , Nishikyo-ku, Kyoto 615-8510, Japan.
authors: Hiroshi
authors: H
authors: Imahori
authors: Information Device Science Laboratory, Graduate School of Materials Science, Nara Institute of Science and Technology , 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors: Yasuaki
authors: Y
authors: Ishikawa
authors: Information Device Science Laboratory, Graduate School of Materials Science, Nara Institute of Science and Technology , 8916-5 Takayama, Ikoma, Nara 630-0192, Japan.
authors: Yukiharu
authors: Y
authors: Uraoka
authors: Department of Materials Science and Synchrotron Radiation Engineering, Graduate School of Engineering, University of Hyogo , 2167 Shosha, Himeji, Hyogo 671-2280, Japan.
authors: Seigo
authors: S
authors: Ito
keywords: CH3NH3PbI3; antireflection coating; p-type single crystal silicon; point contact; tunneling junction