title: Photon-Gated Spin Transistor.
abstract: A new type of spin transistor with an optical gate is proposed with partial exposure of the device, where spin scattering is enhanced under light illumination due to the photon-induced minor spins. Consequently a reproducible transient gate operation of reisitance via optical methods is observed, as ascribed to the nature of spin excitation.
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Fan
authors: F
authors: Li
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Cheng
authors: C
authors: Song
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Bin
authors: B
authors: Cui
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Jingjing
authors: J
authors: Peng
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Youdi
authors: Y
authors: Gu
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Guangyue
authors: G
authors: Wang
authors: Key Laboratory of Advanced Materials (MOE), School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
authors: Feng
authors: F
authors: Pan
keywords: manganite; optical gates; spin transistors