title: Note: Characterization and test of a high input impedance RF amplifier for series nanowire detector.
abstract: We designed a high input impedance RF amplifier based on Tower Jazz's 0.18 μm SiGe BiCMOS process for series nanowire detector. The characterization of its gain and input impedance with a vector network analyzer is described in detail for its specificity. The actual 15 dB gain should be the measured value subtracts 6 dB, which is easy to be ignored. Its input impedance can be equivalent to 6.7 kΩ ∥ 3.4 pF though fitting the measurement, whose accuracy is verified. The process of measurement provides a good reference to characterize the similar special amplifier with unmatched impedance.
authors: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors: Chao
authors: C
authors: Wan
authors: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors: Yufeng
authors: Y
authors: Pei
authors: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors: Zhou
authors: Z
authors: Jiang
authors: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors: Lin
authors: L
authors: Kang
authors: School of Electronic Science and Engineering, Nanjing University, Nanjing 210093, China.
authors: Peiheng
authors: P
authors: Wu