title: Large-Area Dry Transfer of Single-Crystalline Epitaxial Bismuth Thin Films.
abstract: We report the first direct dry transfer of a single-crystalline thin film grown by molecular beam epitaxy. A double cantilever beam fracture technique was used to transfer epitaxial bismuth thin films grown on silicon (111) to silicon strips coated with epoxy. The transferred bismuth films retained electrical, optical, and structural properties comparable to the as-grown epitaxial films. Additionally, we isolated the bismuth thin films on freestanding flexible cured-epoxy post-transfer. The adhesion energy at the bismuth/silicon interface was measured to be ∼1 J/m2, comparable to that of exfoliated and wet transferred graphene. This low adhesion energy and ease of transfer is unexpected for an epitaxially grown film and may enable the study of bismuth's unique electronic and spintronic properties on arbitrary substrates. Moreover, this method suggests a route to integrate other group-V epitaxial films (i.e., phosphorus) with arbitrary substrates, as well as potentially to isolate bismuthene, the atomic thin-film limit of bismuth.
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Emily S
authors: ES
authors: Walker
authors: Research Center for the Mechanics of Solids, Structures and Materials and Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin , Austin, Texas 78712, United States.
authors: Seung Ryul
authors: SR
authors: Na
authors: Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520, United States.
authors: Daehwan
authors: D
authors: Jung
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Stephen D
authors: SD
authors: March
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Joon-Seok
authors: JS
authors: Kim
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Tanuj
authors: T
authors: Trivedi
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Wei
authors: W
authors: Li
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Li
authors: L
authors: Tao
authors: Department of Electrical Engineering, Yale University , New Haven, Connecticut 06520, United States.|Department of Electrical and Computer Engineering, The University of Illinois at Urbana-Champaign , Urbana, Illinois 61801, United States.
authors: Minjoo L
authors: ML
authors: Lee
authors: Research Center for the Mechanics of Solids, Structures and Materials and Department of Aerospace Engineering and Engineering Mechanics, The University of Texas at Austin , Austin, Texas 78712, United States.
authors: Kenneth M
authors: KM
authors: Liechti
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Deji
authors: D
authors: Akinwande
authors: Microelectronics Research Center and Department of Electrical and Computer Engineering, The University of Texas at Austin , Austin, Texas 78758, United States.
authors: Seth R
authors: SR
authors: Bank
keywords: 2D electronics; Molecular beam epitaxy; bismuth; thin films; transfer