title: A carbon nanotube based x-ray detector.
abstract: X-ray detectors based on metal-oxide semiconductor field effect transistors couple instantaneous measurement with high accuracy. However, they only have a limited measurement lifetime because they undergo permanent degradation due to x-ray beam exposure. A field effect transistor based on carbon nanotubes (CNTs), however, overcomes this drawback of permanent degradation, because it can be reset into its starting state after being exposed to the x-ray beam. In this work the CNTs were deposited using a dielectrophoresis method on SiO2coated p-type (boron-doped) Si substrates. For the prepared devices a best gate voltage shift of 244 V Gy-1and a source-drain current sensitivity of 382 nA Gy-1were achieved. These values are larger than those reached by the currently used MOSFET based devices.
authors: Institute for Materials Science, Technische Universität Dresden, Helmholtzstr 7, D-01187 Dresden, Germany.
authors: Richard A
authors: RA
authors: Boucher
authors: Jürgen
authors: J
authors: Bauch
authors: Dietmar
authors: D
authors: Wünsche
authors: Gerhard
authors: G
authors: Lackner
authors: Anindya
authors: A
authors: Majumder