title: Direct Enrichment of Metallic Single-Walled Carbon Nanotubes by Using NO2as Oxidant to Selectively Etch Semiconducting Counterparts.
abstract: We report an efficient method for enriching high-purity metallic single-walled carbon nanotubes (m-SWCNTs) by using NO2as oxidant to remove semiconducting components at 220 °C. After etching, m-SWCNTs with purity higher than 90% were obtained. The surviving m-SWCNTs retain an intact structure without any extra defects on their surface.
authors: Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.|Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.|University of Chinese Academy of Sciences , Beijing 100049, China.
authors: Qiangmin
authors: Q
authors: Yu
authors: Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.|Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.
authors: Chuxin
authors: C
authors: Wu
authors: Key Laboratory of Design and Assembly of Functional Nanostructures, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.|Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou 350108, China.
authors: Lunhui
authors: L
authors: Guan