title: Quantitative analysis of effective height of probes in microwave impedance microscopy.
abstract: A quantitative approach is used to determine an effective height of probe beyond which the capacitance contribution is not significant in microwave impedance microscopy (MIM). We compare the effective height for three different modes of measurement, i.e., capacitance C(l) (l is the tip-sample distance), derivative of capacitance (C'(l)), and second derivative of capacitance (C″(l)). We discuss the effects of tip geometry and sample properties such as relative permittivity and sample height on the effective height with examples and analyze the implication on the spatial resolution of MIM. Finally, our results are verified by microwave impedance microscopy (MIM) measurement.
authors: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
authors: Zhun
authors: Z
authors: Wei
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Eric Yue
authors: EY
authors: Ma
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Yong-Tao
authors: YT
authors: Cui
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Scott
authors: S
authors: Johnston
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Yongliang
authors: Y
authors: Yang
authors: Singapore-MIT Alliance for Research and Technology (SMART) Centre, CREATE Tower, Singapore 138602, Singapore.
authors: Krishna
authors: K
authors: Agarwal
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Michael A
authors: MA
authors: Kelly
authors: Department of Applied Physics and Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.
authors: Zhi-Xun
authors: ZX
authors: Shen
authors: Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117583, Singapore.
authors: Xudong
authors: X
authors: Chen