title: Porous Field-Effect Transistors Based on a Semiconductive Metal-Organic Framework.
abstract: Recently, the emergence of conductive metal-organic frameworks (MOFs) has given great prospects for their applications as active materials in electronic devices. In this work, a high-quality, free-standing conductive MOF membrane was prepared by an air-liquid interfacial growth method. Accordingly, field-effect transistors (FETs) possessing a crystalline microporous MOF channel layer were successfully fabricated for the first time. The porous FETs exhibited p-type behavior, distinguishable on/off ratios, and excellent field-effect hole mobilities as high as 48.6 cm2V-1s-1, which is even comparable to the highest value reported for solution-processed organic or inorganic FETs.
authors: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, China.
authors: Guodong
authors: G
authors: Wu
authors: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, China.|School of Chemical Engineering and Light Industry, Guangdong University of Technology , Guangzhou, Guangdong 510006, China.
authors: Jiahong
authors: J
authors: Huang
authors: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, China.
authors: Ying
authors: Y
authors: Zang
authors: School of Chemical Engineering and Light Industry, Guangdong University of Technology , Guangzhou, Guangdong 510006, China.
authors: Jun
authors: J
authors: He
authors: State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences , Fuzhou, Fujian 350002, China.
authors: Gang
authors: G
authors: Xu