title: Vertically Formed Graphene Stripe for 3D Field-Effect Transistor Applications.
abstract: A 100-nm wide, vertically formed graphene stripe (GS) is demonstrated for three-dimensional (3D) electronic applications. The GS forms along the sidewall of a thin nickel film. It is possible to further scale down the GS width by engineering the deposited thickness of the atomic layer deposition (ALD) Ni film. Unlike a conventional GS or graphene nanoribbon (GNR), the vertically formed GS is made without a graphene transfer and etching process. The process integration of the proposed GS FETs resembles that of currently commercialized vertical NAND flash memory with a design rule of less than 20 nm, implying practical usage of this formed GS for 3D advanced FET applications.
authors: Department of Electrical Engineering, KAIST, Daejeon, 305-701, Korea.
authors: Seul Ki
authors: SK
authors: Hong
authors: Department of Electrical Engineering, KAIST, Daejeon, 305-701, Korea.
authors: Jae Hoon
authors: JH
authors: Bong
authors: Department of Electrical Engineering, KAIST, Daejeon, 305-701, Korea.
authors: Byung Jin
authors: BJ
authors: Cho
authors: Department of Materials Engineering, Korea Aerospace University, Goyang, 412-791, Korea.
authors: Wan Sik
authors: WS
authors: Hwang
keywords: 3D devices; atomic layer deposition; field-effect transistors; graphene stripe; graphene transfer