title: High performance FETs based on ZnO nanowires synthesized by low cost methods.
abstract: Single ZnO nanowires prepared by wet and dry methods are used as channels in high performance back-gated field effect transistors working in low power operation mode, with on-off ratios up to 105and mobilities up to 167 cm2V-1s-1. The nanowires' properties, generated by the growth techniques, influence the parameters of the transistors, therefore a throughout comparison is made.
authors: Camelia
authors: C
authors: Florica
authors: Andreea
authors: A
authors: Costas
authors: Andrei
authors: A
authors: Kuncser
authors: Nicoleta
authors: N
authors: Preda
authors: Ionut
authors: I
authors: Enculescu