title: High efficiency radiofrequency power amplifier module for parallel transmit arrays at 3 Tesla.
abstract: The purpose of this study is to develop an in-bore radiofrequency (RF) power amplifier (RFPA) module with high power efficiency and density for use in parallel transmit (pTX) arrays at 3 Tesla.
  
  
  
  The modules use a combination of current mode class D, class S, and class E amplifiers based on enhancement-mode gallium nitride-on-silicon field-effect transistors. Together the amplifiers implement envelope elimination and restoration to achieve amplitude modulation with high efficiency over a wide operating range. The static nonlinearity and power efficiency of the module were measured using pulsed RF measurements over a 37 dB dynamic range. Thermal performance was also measured with and without forced convection cooling.
  
  
  
  The modules produces peak RF power up to 130 W with an overall efficiency of 85%. When producing 100 W RF pulses at a duty cycle of 10%, maximum junction temperatures did not exceed 80 °C, even without the use of heatsinks or forced convection.
  
  
  
  The small size and low cost of the modules promise lower cost implementation of pTX systems compared with linear RFPAs located remotely. Further work must be done on control of the RF output in the presence of nonlinearities and coupling. Magn Reson Med 78:1589-1598, 2017. © 2016 International Society for Magnetic Resonance in Medicine.
authors: Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio, USA.
authors: Michael
authors: M
authors: Twieg
authors: Department of Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio, USA.|Department of Radiology, Case Western Reserve University, Cleveland, Ohio, USA.
authors: Mark A
authors: MA
authors: Griswold
mesh_terms: D004867:Equipment Design; D005708:Gallium / Q000737:chemistry; D008279:Magnetic Resonance Imaging / Q000295:instrumentation* / Q000379:methods*; D019047:Phantoms, Imaging; D011846:Radio Waves; D012825:Silicon / Q000737:chemistry; D014173:Transistors, Electronic
chemical_list: C473348:gallium nitride; D005708:Gallium; D012825:Silicon
keywords: RF chain; RF power amplifier; array decoupling; parallel transmit