title: Stretching magnetism with an electric field in a nitride semiconductor.
abstract: The significant inversion symmetry breaking specific to wurtzite semiconductors, and the associated spontaneous electrical polarization, lead to outstanding features such as high density of carriers at the GaN/(Al,Ga)N interface-exploited in high-power/high-frequency electronics-and piezoelectric capabilities serving for nanodrives, sensors and energy harvesting devices. Here we show that the multifunctionality of nitride semiconductors encompasses also a magnetoelectric effect allowing to control the magnetization by an electric field. We first demonstrate that doping of GaN by Mn results in a semi-insulating material apt to sustain electric fields as high as 5 MV cm-1. Having such a material we find experimentally that the inverse piezoelectric effect controls the magnitude of the single-ion magnetic anisotropy specific to Mn3+ions in GaN. The corresponding changes in the magnetization can be quantitatively described by a theory developed here.
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: D
authors: D
authors: Sztenkiel
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: M
authors: M
authors: Foltyn
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: G P
authors: GP
authors: Mazur
authors: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz, Austria.|Linz Institute of Technology, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz, Austria.
authors: R
authors: R
authors: Adhikari
authors: Institute of Electron Technology, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: K
authors: K
authors: Kosiel
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.|Institute of Experimental Physics, University of Wrocław, pl. M. Borna 9, PL 50-204 Wrocław, Poland.
authors: K
authors: K
authors: Gas
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: M
authors: M
authors: Zgirski
authors: Institute of Electron Technology, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: R
authors: R
authors: Kruszka
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: R
authors: R
authors: Jakiela
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: Tian
authors: T
authors: Li
authors: Institute of Electron Technology, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: A
authors: A
authors: Piotrowska
authors: Institut für Halbleiter- und Festkörperphysik, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz, Austria.|Linz Institute of Technology, Johannes Kepler University, Altenbergerstrasse 69, A-4040 Linz, Austria.
authors: A
authors: A
authors: Bonanni
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.
authors: M
authors: M
authors: Sawicki
authors: Institute of Physics, Polish Academy of Sciences, aleja Lotników 32/46, PL 02-668 Warszawa, Poland.|Institute of Theoretical Physics, University of Warsaw, ulica Pasteura 5, PL 02-093 Warszawa, Poland.|WPI-Advanced Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, 980-8577 Sendai, Japan.
authors: T
authors: T
authors: Dietl