title: Interfacial Engineering of Silicon Carbide Nanowire/Cellulose Microcrystal Paper toward High Thermal Conductivity.
abstract: Polymer composites with high thermal conductivity have attracted much attention, along with the rapid development of electronic devices toward higher speed and better performance. However, high interfacial thermal resistance between fillers and matrix or between fillers and fillers has been one of the primary bottlenecks for the effective thermal conduction in polymer composites. Herein, we report on engineering interfacial structure of silicon carbide nanowire/cellulose microcrystal paper by generating silver nanostructures. We show that silver nanoparticle-deposited silicon carbide nanowires as fillers can effectively enhance the thermal conductivity of the matrix. The in-plane thermal conductivity of the resultant composite paper reaches as high as 34.0 W/m K, which is one order magnitude higher than that of conventional polymer composites. Fitting the measured thermal conductivity with theoretical models qualitatively demonstrates that silver nanoparticles bring the lower interfacial thermal resistances both at silicon carbide nanowire/cellulose microcrystal and silicon carbide nanowire/silicon carbide nanowire interfaces. This interfacial engineering approach provides a powerful tool for sophisticated fabrication of high-performance thermal-management materials.
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences , Shenzhen 518055, China.
authors: Yimin
authors: Y
authors: Yao
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Shenzhen College of Advanced Technology, University of Chinese Academy of Sciences , Shenzhen 518055, China.
authors: Xiaoliang
authors: X
authors: Zeng
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Department of Chemical Engineering, China University of Petroleum , Beijing 102249, China.
authors: Guiran
authors: G
authors: Pan
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Department of Nano Science and Technology Institute, University of Science and Technology of China , Suzhou 215123, China.
authors: Jiajia
authors: J
authors: Sun
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Department of Nano Science and Technology Institute, University of Science and Technology of China , Suzhou 215123, China.
authors: Jiantao
authors: J
authors: Hu
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Department of Nano Science and Technology Institute, University of Science and Technology of China , Suzhou 215123, China.
authors: Yun
authors: Y
authors: Huang
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.
authors: Rong
authors: R
authors: Sun
authors: Department of Electronics Engineering, The Chinese University of Hong Kong , Hong Kong 999077, China.
authors: Jian-Bin
authors: JB
authors: Xu
authors: Shenzhen Institutes of Advanced Technology, Chinese Academy of Sciences , Shenzhen 518055, China.|Department of Electronics Engineering, The Chinese University of Hong Kong , Hong Kong 999077, China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332, United States.
authors: Ching-Ping
authors: CP
authors: Wong
keywords: interfacial engineering; microcrystal paper; silicon carbide nanowires; thermal conductivity