title: Unveiling Three-Dimensional Stacking Sequences of 1T Phase MoS2Monolayers by Electron Diffraction.
abstract: The phase transition between semiconducting 1H to metallic 1T phases in monolayered transition metal dichalcogenides (TMDs) essentially involves three-dimensional (3D) structure changes of asymmetric relocations of S atoms at the top and bottom of the one-unit-cell crystals. Even though the phase transition has a profound influence on properties and applications of 2D TMDs, a viable approach to experimentally characterize the stacking sequences of the vertically asymmetrical 1T phase is still not available. Here, we report an electron diffraction method based on dynamic electron scattering to characterize the stacking sequences of 1T MoS2monolayers. This study provides an approach to unveil the 3D structure of 2D crystals and to explore the underlying mechanisms of semiconductor-to-metal transition of monolayer TMDs.
authors: Ziqian
authors: Z
authors: Wang
authors: Department of Mechanical and Aerospace Engineering, School of Engineering, Hong Kong University of Science and Technology , Clear Water Bay, Kowloon, Hong Kong SAR.
authors: Shoucong
authors: S
authors: Ning
authors: Takeshi
authors: T
authors: Fujita
authors: Akihiko
authors: A
authors: Hirata
authors: CREST, JST , 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan.
authors: Mingwei
authors: M
authors: Chen
keywords: MoS2; electron diffraction; phase interface; transition metal dichalcogenide; two-dimensional materials