title: M-DNA/Transition Metal Dichalcogenide Hybrid Structure-based Bio-FET sensor with Ultra-high Sensitivity.
abstract: Here, we report a high performance biosensor based on (i) a Cu2+-DNA/MoS2hybrid structure and (ii) a field effect transistor, which we refer to as a bio-FET, presenting a high sensitivity of 1.7 × 103A/A. This high sensitivity was achieved by using a DNA nanostructure with copper ions (Cu2+) that induced a positive polarity in the DNA (receptor). This strategy improved the detecting ability for doxorubicin-like molecules (target) that have a negative polarity. Very short distance between the biomolecules and the sensor surface was obtained without using a dielectric layer, contributing to the high sensitivity. We first investigated the effect of doxorubicin on DNA/MoS2and Cu2+-DNA/MoS2nanostructures using Raman spectroscopy and Kelvin force probe microscopy. Then, we analyzed the sensing mechanism and performance in DNA/MoS2- and Cu2+-DNA/MoS2-based bio-FETs by electrical measurements (ID-VGat various VD) for various concentrations of doxorubicin. Finally, successful operation of the Cu2+-DNA/MoS2bio-FET was demonstrated for six cycles (each cycle consisted of four steps: 2 preparation steps, a sensing step, and an erasing step) with different doxorubicin concentrations. The bio-FET showed excellent reusability, which has not been achieved previously in 2D biosensors.
authors: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Hyung-Youl
authors: HY
authors: Park
authors: Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.|SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Sreekantha Reddy
authors: SR
authors: Dugasani
authors: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Dong-Ho
authors: DH
authors: Kang
authors: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Gwangwe
authors: G
authors: Yoo
authors: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Jinok
authors: J
authors: Kim
authors: Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Bramaramba
authors: B
authors: Gnapareddy
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Jaeho
authors: J
authors: Jeon
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Minwoo
authors: M
authors: Kim
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Young Jae
authors: YJ
authors: Song
authors: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Sungjoo
authors: S
authors: Lee
authors: Korea Advanced Nano Fab Center, Suwon 443-270, Korea.
authors: Jonggon
authors: J
authors: Heo
authors: Korea Advanced Nano Fab Center, Suwon 443-270, Korea.
authors: Young Jin
authors: YJ
authors: Jeon
authors: Department of Physics, Sungkyunkwan University, Suwon 440-746, Korea.|SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Korea.
authors: Sung Ha
authors: SH
authors: Park
authors: School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
authors: Jin-Hong
authors: JH
authors: Park