title: Tuning the Band Bending and Controlling the Surface Reactivity at Polar and Nonpolar Surfaces of ZnO through Phosphonic Acid Binding.
abstract: ZnO is a prime candidate for future use in transparent electronics; however, development of practical materials requires attention to factors including control of its unusual surface band bending and surface reactivity. In this work, we have modified the O-polar (0001̅), Zn-polar (0001), and m-plane (101̅0) surfaces of ZnO with phosphonic acid (PA) derivatives and measured the effect on the surface band bending and surface sensitivity to atmospheric oxygen. Core level and valence band synchrotron X-ray photoemission spectroscopy was used to measure the surface band bending introduced by PA modifiers with substituents of opposite polarity dipole moment: octadecylphosphonic acid (ODPA) and 3,3,4,4,5,5,6,6,7,7,8,8,8-tridecafluorooctylphosphonic acid (F13OPA). Both PAs act as surface electron donors, increasing the downward band bending and the strength of the two-dimensional surface electron accumulation layer on all of the ZnO surfaces investigated. On the O-polar (0001̅) and m-plane (101̅0) surfaces, the ODPA modifier produced the largest increase in downward band bending relative to the hydroxyl-terminated unmodified surface of 0.55 and 0.35 eV, respectively. On the Zn-polar (0001) face, the F13OPA modifier gave the largest increase (by 0.50 eV) producing a total downward band bending of 1.00 eV, representing ∼30% of the ZnO band gap. Ultraviolet (UV) photoinduced surface wettability and photoconductivity measurements demonstrated that the PA modifiers are effective at decreasing the sensitivity of the surface toward atmospheric oxygen. Modification with PA derivatives produced a large increase in the persistence of UV-induced photoconductivity and a large reduction in UV-induced changes in surface wettability.
authors: MacDiarmid Institute for Advanced Materials and Nanotechnology , Wellington 6140, New Zealand.
authors: Alexandra R
authors: AR
authors: McNeill
authors: MacDiarmid Institute for Advanced Materials and Nanotechnology , Wellington 6140, New Zealand.
authors: Adam R
authors: AR
authors: Hyndman
authors: MacDiarmid Institute for Advanced Materials and Nanotechnology , Wellington 6140, New Zealand.
authors: Roger J
authors: RJ
authors: Reeves
authors: MacDiarmid Institute for Advanced Materials and Nanotechnology , Wellington 6140, New Zealand.
authors: Alison J
authors: AJ
authors: Downard
authors: MacDiarmid Institute for Advanced Materials and Nanotechnology , Wellington 6140, New Zealand.
authors: Martin W
authors: MW
authors: Allen
keywords: ZnO; band bending; photoconductivity; surface electron accumulation; surface reactivity; wettability