title: Quantification of the Void Volume in Single-Crystal Silicon.
abstract: This paper investigates the use of a method based on Cu decoration and neutron activation to determine the total volume of voids in a silicon single crystal. A measurement protocol was developed and tested in an experiment carried out with a 5 cm3volume and 10 g mass high-purity natural silicon sample. The few percent uncertainty reached in the determination of the Cu concentration, at a 1014cm-3level, makes this method a candidate to set an upper limit to the concentration of the vacancies contributing to the void volume in the enriched silicon material used to determine the Avogadro constant.
authors: Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.
authors: Giancarlo
authors: G
authors: D'Agostino
authors: Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.|Department of Chemistry, University of Pavia , via Taramelli 12, 27100 Pavia, Italy.
authors: Marco
authors: M
authors: Di Luzio
authors: Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.
authors: Giovanni
authors: G
authors: Mana
authors: Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.
authors: Luca
authors: L
authors: Martino
authors: Department of Chemistry, University of Pavia , via Taramelli 12, 27100 Pavia, Italy.
authors: Massimo
authors: M
authors: Oddone
authors: Istituto Nazionale di Ricerca Metrologica , Strada delle Cacce 91, 10135 Torino, Italy.
authors: Carlo Paolo
authors: CP
authors: Sasso