title: Extremely Stable Current Emission of P-Doped SiC Flexible Field Emitters.
abstract: Novel P-doped SiC flexible field emittersare developed on carbon fabric substrates, having both lowEtoof 1.03-0.73 Vμm-1up to high temperatures of 673 K, and extremely high current emission stability when subjected to different bending states, bending circle times as well as high temperatures (current emission fluctuations are typically in the range ±2.1%-3.4%).
authors: Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China; School of Material Science and Engineering China University of Mining and Technology Xuzhou City 221116 P.R. China.
authors: Shanliang
authors: S
authors: Chen
authors: Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China.
authors: Minghui
authors: M
authors: Shang
authors: Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China.
authors: Fengmei
authors: F
authors: Gao
authors: Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China.
authors: Lin
authors: L
authors: Wang
authors: School of Material Science and Engineering China University of Mining and Technology Xuzhou City 221116 P.R. China.
authors: Pengzhan
authors: P
authors: Ying
authors: Institute of Materials Ningbo University of Technology Ningbo City 315016 P.R. China.
authors: Weiyou
authors: W
authors: Yang
authors: Department of Materials Science Fudan University Shanghai 200433 P. R. China.
authors: Xiaosheng
authors: X
authors: Fang
keywords: P‐doped SiC; field emitters; flexible devices; low turn‐on fields; stable current emission