title: Gate-dependent asymmetric transport characteristics in pentacene barristors with graphene electrodes.
abstract: We investigated the electrical characteristics and the charge transport mechanism of pentacene vertical hetero-structures with graphene electrodes. The devices are composed of vertical stacks of silicon, silicon dioxide, graphene, pentacene, and gold. These vertical heterojunctions exhibited distinct transport characteristics depending on the applied bias direction, which originates from different electrode contacts (graphene and gold contacts) to the pentacene layer. These asymmetric contacts cause a current rectification and current modulation induced by the gate field-dependent bias direction. We observed a change in the charge injection barrier during variable-temperature current-voltage characterization, and we also observed that two distinct charge transport channels (thermionic emission and Poole-Frenkel effect) worked in the junctions, which was dependent on the bias magnitude.
authors: Department of Physics and Astronomy and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
authors: Wang-Taek
authors: WT
authors: Hwang
authors: Misook
authors: M
authors: Min
authors: Hyunhak
authors: H
authors: Jeong
authors: Dongku
authors: D
authors: Kim
authors: Jingon
authors: J
authors: Jang
authors: Daekyung
authors: D
authors: Yoo
authors: Yeonsik
authors: Y
authors: Jang
authors: Jun-Woo
authors: JW
authors: Kim
authors: Jiyoung
authors: J
authors: Yoon
authors: Seungjun
authors: S
authors: Chung
authors: Gyu-Chul
authors: GC
authors: Yi
authors: Hyoyoung
authors: H
authors: Lee
authors: Gunuk
authors: G
authors: Wang
authors: Takhee
authors: T
authors: Lee