title: Note: Electro-optic coefficients of Li-deficient MgO-doped LiNbO3crystal.
abstract: A number of Li-deficient MgO-doped LiNbO3(LN) crystals with different Li2O contents ranging from 43.4 mol. % to 44.5 mol. % were prepared by carrying out the Li-poor vapor transport equilibration treatment on 5 mol. % (in growth melt) MgO-doped LN crystals. Unclamped electro-optic (EO) coefficients γ13and γ33of these crystals were measured by Mach-Zehnder interferometry. The results show that γ13(γ33) increases linearly by ∼14% (11%) as the Li2O content decreases from 44.5 mol. % of the as-grown state to 43.4 mol. % of the Li-deficient state. This feature is desired for the EO application of the Li-deficient MgO:LN crystal.
authors: Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China, and Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China.
authors: Wan-Ying
authors: WY
authors: Du
authors: University of Toulouse 3, Faculty of Engineering, 118 Route de Narbonne, F-31062 Toulouse, France.
authors: Zi-Bo
authors: ZB
authors: Zhang
authors: Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China, and Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China.
authors: Shuai
authors: S
authors: Ren
authors: Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China, and Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China.
authors: Wing-Han
authors: WH
authors: Wong
authors: Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China, and Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China.
authors: Dao-Yin
authors: DY
authors: Yu
authors: Department of Electronic Engineering and State Key Laboratory of Millimeter Waves, City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.
authors: Edwin Yue-Bun
authors: EY
authors: Pun
authors: Department of Opto-electronics and Information Engineering, School of Precision Instruments and Opto-electronics Engineering, Tianjin University, Tianjin 300072, China, and Key Laboratory of Optoelectronic Information Technology (Ministry of Education), Tianjin University, Tianjin 300072, China.
authors: De-Long
authors: DL
authors: Zhang