title: Spin relaxation and the Kondo effect in transition metal dichalcogenide monolayers.
abstract: We investigate the spin relaxation and Kondo resistivity caused by magnetic impurities in doped transition metal dichalcogenide monolayers. We show that momentum and spin relaxation times, due to the exchange interaction by magnetic impurities, are much longer when the Fermi level is inside the spin-split region of the valence band. In contrast to the spin relaxation, we find that the dependence of Kondo temperature TKon the doping is not strongly affected by the spin-orbit induced splitting, although only one of the spin species are present at each valley. This result, which is obtained using both perturbation theory and the poor man's scaling methods, originates from the intervalley spin-flip scattering in the spin-split region. We further demonstrate the decline in the conductivity with temperatures close to TK, which can vary with the doping. Our findings reveal the qualitative difference with the Kondo physics in conventional metallic systems and other Dirac materials.
authors: Istituto Italiano di Tecnologia, Graphene Labs, Via Morego 30, I-16163 Genova, Italy.
authors: Habib
authors: H
authors: Rostami
authors: Ali G
authors: AG
authors: Moghaddam
authors: Reza
authors: R
authors: Asgari