title: Minority Currents in n-Doped Organic Transistors.
abstract: Doping allows us to control the majority and minority charge carrier concentration in organic field-effect transistors. However, the precise mechanism of minority charge carrier generation and transport in organic semiconductors is largely unknown. Here, the injection of minority charge carriers into n-doped organic field-effect transistors is studied. It is shown that holes can be efficiently injected into the transistor channel via Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. Moreover, it is shown that the onset of minority (hole) conduction is shifted by lightly n-doping the channel region of the transistor. This behavior can be explained by a large voltage that has to be applied to the gate in order to fully deplete the n-doped layer as well as an increase in hole trapping by inactive dopants.
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Akram
authors: A
authors: Al-Shadeedi
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Shiyi
authors: S
authors: Liu
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Chang-Min
authors: CM
authors: Keum
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Daniel
authors: D
authors: Kasemann
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Christoph
authors: C
authors: Hoßbach
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Johann
authors: J
authors: Bartha
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Scott D
authors: SD
authors: Bunge
authors: Department of Physics and ∥Department of Chemistry and Biochemistry, Kent State University , Kent, Ohio 44242, United States.|Institut für Angewandte Photophysik and §Institut für Halbleiter- und Mikrosystemtechnik, TU Dresden , 01062 Dresden, Germany.
authors: Björn
authors: B
authors: Lüssem
keywords: Zener tunneling; ambipolar transistor; minority currents; n-channel transistor; n-type molecular doping; pentacene field-effect transistor