title: Photoluminescence of monolayer transition metal dichalcogenides integrated with VO2.
abstract: Integrating a phase transition material with two-dimensional semiconductors can provide a route towards tunable opto-electronic metamaterials. Here, we integrate monolayer transition metal dichalcogenides with vanadium dioxide (VO2) thin films grown via molecular beam epitaxy to form a 2D/3D heterostructure. Vanadium dioxide undergoes an insulator-to-metal transition at 60-70 °C, which changes the band alignment between MoS2and VO2from a semiconductor-insulator junction to a semiconductor-metal junction. By switching VO2between insulating and metallic phases, the modulation of photoluminescence emission in the 2D semiconductors was observed. This study demonstrates the feasibility to combine TMDs and functional oxides to create unconventional hybrid optoelectronic properties derived from 2D semiconductors that are linked to functional properties of oxides through proximity coupling.
authors: Department of Materials Science and Engineering, The Pennsylvania State University, University Park, PA 16802, USA. Center for Two-Dimensional and Layered Materials, The Pennsylvania State University, University Park, PA 16802, USA.
authors: Yu-Chuan
authors: YC
authors: Lin
authors: Kursti
authors: K
authors: DeLello
authors: Hai-Tian
authors: HT
authors: Zhang
authors: Kehao
authors: K
authors: Zhang
authors: Zhong
authors: Z
authors: Lin
authors: Mauricio
authors: M
authors: Terrones
authors: Roman
authors: R
authors: Engel-Herbert
authors: Joshua A
authors: JA
authors: Robinson