title: Low-temperature-dependent property in an avalanche photodiode based on GaN/AlN periodically-stacked structure.
abstract: In ultra-high sensitive APDs, a vibrate of temperature might bring a fatal decline of the multiplication performance. Conventional method to realize a temperature-stable APD focuses on the optimization of device structure, which has limited effects. While in this paper, a solution by reducing the carrier scattering rate based on an GaN/AlN periodically-stacked structure (PSS) APD is brought out to improve temperature stability essentially. Transport property is systematically investigated. Compared with conventional GaN homojunction (HJ) APDs, electron suffers much less phonon scatterings before it achieves ionization threshold energy and more electrons occupy high energy states in PSS APD. The temperature dependence of ionization coefficient and energy distribution is greatly reduced. As a result, temperature stability on gain is significantly improved when the ionization happens with high efficiency. The change of gain for GaN (10 nm)/AlN (10 nm) PSS APD from 300 K to 310 K is about 20% lower than that for HJ APD. Additionally, thicker period length is found favorable to ionization coefficient ratio but a bit harmful to temperature stability, while increasing the proportion of AlN at each period in a specific range is found favorable to both ionization coefficient ratio and temperature stability.
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Jiyuan
authors: J
authors: Zheng
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Lai
authors: L
authors: Wang
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Di
authors: D
authors: Yang
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Jiadong
authors: J
authors: Yu
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Xiao
authors: X
authors: Meng
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Zhibiao
authors: Z
authors: Hao
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Changzheng
authors: C
authors: Sun
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Bing
authors: B
authors: Xiong
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Yi
authors: Y
authors: Luo
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Yanjun
authors: Y
authors: Han
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Jian
authors: J
authors: Wang
authors: Tsinghua National Laboratory for Information Science and Technology, Department of Electronic Engineering, Tsinghua University, Beijing 100084, China.
authors: Hongtao
authors: H
authors: Li
authors: Microsystem &Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
authors: Mo
authors: M
authors: Li
authors: Microsystem &Terahertz Research Center, China Academy of Engineering Physics, Chengdu 610200, China.
authors: Qian
authors: Q
authors: Li