title: Modulating Electronic Properties of Monolayer MoS2via Electron-Withdrawing Functional Groups of Graphene Oxide.
abstract: Modulation of the carrier concentration and electronic type of monolayer (1L) MoS2is highly important for applications in logic circuits, solar cells, and light-emitting diodes. Here, we demonstrate the tuning of the electronic properties of large-area 1L-MoS2using graphene oxide (GO). GO sheets are well-known as hole injection layers since they contain electron-withdrawing groups such as carboxyl, hydroxyl, and epoxy. The optical and electronic properties of GO-treated 1L-MoS2are dramatically changed. The photoluminescence intensity of GO-treated 1L-MoS2is increases by more than 470% compared to the pristine sample because of the increase in neutral exciton contribution. In addition, the A1gpeak in Raman spectra shifts considerably, revealing that GO treatment led to the formation of p-type doped 1L-MoS2. Moreover, the current vs voltage (I-V) curves of GO-coated 1L-MoS2field effect transistors show that the electron concentration of 1L-MoS2is significantly lower in comparison with pristine 1L-MoS2. Current rectification is also observed from the I-V curve of the lateral diode structure with 1L-MoS2and 1L-MoS2/GO, indicating that the electronic structure of MoS2is significantly modulated by the electron-withdrawing functional group of GO.
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Hye Min
authors: HM
authors: Oh
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Hyun
authors: H
authors: Jeong
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Gang Hee
authors: GH
authors: Han
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Hyun
authors: H
authors: Kim
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Jung Ho
authors: JH
authors: Kim
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Si Young
authors: SY
authors: Lee
authors: Nano Hybrid Technology Research Center, Korea Electrotechnology Research Institute (KERI) , Changwon 51543, Republic of Korea.|Department of Electrical Functionality Material Engineering, University of Science and Technology (UST) , Daejeon 34113, Republic of Korea.
authors: Seung Yol
authors: SY
authors: Jeong
authors: Nano Hybrid Technology Research Center, Korea Electrotechnology Research Institute (KERI) , Changwon 51543, Republic of Korea.
authors: Sooyeon
authors: S
authors: Jeong
authors: Department of Physics, Hallym University , Hallymdaehaggil 1, Chuncheon 24252, Republic of Korea.
authors: Doo Jae
authors: DJ
authors: Park
authors: Department of Energy and Materials Engineering, Dongguk University-Seoul , Seoul 04620, Republic of Korea.
authors: Ki Kang
authors: KK
authors: Kim
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Young Hee
authors: YH
authors: Lee
authors: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors: Mun Seok
authors: MS
authors: Jeong
keywords: Raman spectroscopy; electron-withdrawing effect; graphene oxide; monolayer MoS2; photoluminescence