title: Optoelectronic Properties of Few-Layer MoS2FET Gated by Ferroelectric Relaxor Polymer.
abstract: Recently, new devices combining two-dimensional (2D) materials with ferroelectrics, have been a new hotspot for promising applications in electronics and optoelectronics. Here, we design a new type of FET using the 2D MoS2and poly(vinylidene fluoride-trifluoroethylene-chlorofloroethylene) terpolymer ferroelectric relaxor. The devices exhibit excellent performance including a large on/off ratio) and an insignificant leakage current. Moreover, the hysteresis characteristics are effectively modulated for its ferroelectric properties at low temperature. Additionally, a broad range photoresponse (visible to 1.55 μm) and a high sensitivity (>300 A/W, λ = 450 nm) are achieved. These results indicate that ferroelectric relaxor can be applied into the high-performance 2D optoelectronic devices.
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.|University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, China.
authors: Yan
authors: Y
authors: Chen
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Xudong
authors: X
authors: Wang
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Peng
authors: P
authors: Wang
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.|University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, China.
authors: Hai
authors: H
authors: Huang
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Guangjian
authors: G
authors: Wu
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.|University of Chinese Academy of Sciences , 19 Yuquan Road, Beijing 100049, China.
authors: Bobo
authors: B
authors: Tian
authors: Department of Physics, University of Science and Technology of China , Hefei 230000, China.
authors: Zhenchen
authors: Z
authors: Hong
authors: Department of Physics, University of Science and Technology of China , Hefei 230000, China.
authors: Yutao
authors: Y
authors: Wang
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Shuo
authors: S
authors: Sun
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Hong
authors: H
authors: Shen
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Jianlu
authors: J
authors: Wang
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Weida
authors: W
authors: Hu
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Jinglan
authors: J
authors: Sun
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Xiangjian
authors: X
authors: Meng
authors: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences , 500 Yu Tian Road, Shanghai 200083, China.
authors: Junhao
authors: J
authors: Chu
keywords: Ferroelectric relaxor; MoS2; P(VDF-TrFE-CFE); high-κ; photodetectors