title: Tuning of Rashba/Dresselhaus Spin Splittings by Inserting Ultra-Thin InAs Layers at Interfaces in Insulating GaAs/AlGaAs Quantum Wells.
abstract: The ratio of Rashba and Dresselhaus spin splittings of the (001)-grown GaAs/AlGaAs quantum wells (QWs), investigated by the spin photocurrent spectra induced by circular photogalvanic effect (CPGE) at inter-band excitation, has been effectively tuned by changing the well width of QWs and by inserting a one-monolayer-thick InAs layer at interfaces of GaAs/AlGaAs QWs. Reflectance difference spectroscopy (RDS) is also employed to study the interface asymmetry of the QWs, whose results are in good agreement with that obtained by CPGE measurements. It is demonstrated that the inserted ultra-thin InAs layers will not only introduce structure inversion asymmetry (SIA), but also result in additional interface inversion asymmetry (IIA), whose effect is much stronger in QWs with smaller well width. It is also found that the inserted InAs layer brings in larger SIA than IIA. The origins of the additional SIA and IIA introduced by the inserted ultra-thin InAs layer have been discussed.
authors: Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China. jlyu@semi.ac.cn.|Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China. jlyu@semi.ac.cn.
authors: Jinling
authors: J
authors: Yu
authors: Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China.|Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China.
authors: Xiaolin
authors: X
authors: Zeng
authors: Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China.|Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China.
authors: Shuying
authors: S
authors: Cheng
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China.
authors: Yonghai
authors: Y
authors: Chen
authors: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People's Republic of China.
authors: Yu
authors: Y
authors: Liu
authors: Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China.|Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China.
authors: Yunfeng
authors: Y
authors: Lai
authors: Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China.|Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou University, Changzhou, Jiangsu, 213164, China.
authors: Qiao
authors: Q
authors: Zheng
authors: Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing, 100084, China.
authors: Jun
authors: J
authors: Ren
keywords: Interface inversion asymmetry; Rashba- and Dresselhaus-type CPGE; Ratio of Rashba/Dresselhaus spin splittings; Reflectance difference spectroscopy; Spectroscopy of circular photogalvanic effect