title: Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices.
abstract: The capabilities to tune the conduction properties of materials by doping or electric fields are essential for the design of electronic devices. However, in two-dimensional materials substitutional doping has been achieved in only a few systems, such as Nb substitutional doping in MoS2. Surface charge transfer is still one of the popular ways to control whether the conduction is dominated by holes or electrons. Here, we demonstrate that a capping layer of cross-linked poly(methyl methacrylate) modifies the potential in a black phosphorus (BP) layer so that conduction in the absence of an external electric field is dominated by electrons, rather than holes. Using this technique to form adjoining regions dominated by hole and electron conduction, a family of novel planar devices, such as BP-gated diodes, BP bidirectional rectifier, and BP logic inverters, can be fabricated. The devices are potentially useful for electronic applications, including rectification and switching.
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Guocai
authors: G
authors: Wang
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Lihong
authors: L
authors: Bao
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Tengfei
authors: T
authors: Pei
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Ruisong
authors: R
authors: Ma
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.
authors: Yu-Yang
authors: YY
authors: Zhang
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.
authors: Liling
authors: L
authors: Sun
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Guangyu
authors: G
authors: Zhang
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.
authors: Haifang
authors: H
authors: Yang
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.
authors: Junjie
authors: J
authors: Li
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.
authors: Changzhi
authors: C
authors: Gu
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Shixuan
authors: S
authors: Du
authors: University of Chinese Academy of Sciences , Beijing 100190, China.
authors: Sokrates T
authors: ST
authors: Pantelides
authors: Ronald D
authors: RD
authors: Schrimpf
authors: Institute of Physics, Chinese Academy of Sciences , P.O. Box 603, Beijing 100190, China.|University of Chinese Academy of Sciences , Beijing 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices , Beijing 100190, China.
authors: Hong-Jun
authors: HJ
authors: Gao
keywords: black phosphorus; field-effect transistor; interfacial charge; logic inverter; p−n diode