title: Achievement of High-Response Organic Field-Effect Transistor NO₂ Sensor by Using the Synergistic Effect of ZnO/PMMA Hybrid Dielectric and CuPc/Pentacene Heterojunction.
abstract: High-response organic field-effect transistor (OFET)-based NO₂ sensors were fabricated using the synergistic effect the synergistic effect of zinc oxide/poly(methyl methacrylate) (ZnO/PMMA) hybrid dielectric and CuPc/Pentacene heterojunction. Compared with the OFET sensors without synergistic effect, the fabricated OFET sensors showed a remarkable shift of saturation current, field-effect mobility and threshold voltage when exposed to various concentrations of NO₂ analyte. Moreover, after being stored in atmosphere for 30 days, the variation of saturation current increased more than 10 folds at 0.5 ppm NO₂. By analyzing the electrical characteristics, and the morphologies of organic semiconductor films of the OFET-based sensors, the performance enhancement was ascribed to the synergistic effect of the dielectric and organic semiconductor. The ZnO nanoparticles on PMMA dielectric surface decreased the grain size of pentacene formed on hybrid dielectric, facilitating the diffusion of CuPc molecules into the grain boundary of pentacene and the approach towards the conducting channel of OFET. Hence, NO₂ molecules could interact with CuPc and ZnO nanoparticles at the interface of dielectric and organic semiconductor. Our results provided a promising strategy for the design of high performance OFET-based NO₂ sensors in future electronic nose and environment monitoring.
authors: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. 201211050108@std.uestc.edu.cn.
authors: Shijiao
authors: S
authors: Han
authors: Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China. caiwu0301@163.com.
authors: Jiang
authors: J
authors: Cheng
authors: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. 201511050103@std.uestc.edu.cn.
authors: Huidong
authors: H
authors: Fan
authors: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu 610054, China. jsyu@uestc.edu.cn.|Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China. jsyu@uestc.edu.cn.
authors: Junsheng
authors: J
authors: Yu
authors: Co-Innovation Center for Micro/Nano Optoelectronic Materials and Devices, Research Institute for New Materials and Technology, Chongqing University of Arts and Sciences, Chongqing 402160, China. lli@cqwu.edu.cn.
authors: Lu
authors: L
authors: Li
keywords: NO2 sensors; ZnO/PMMA hybrid dielectric; heterojunction structure; organic field-effect transistor (OFET); synergistic effect