title: Lead-Free, Blue Emitting Bismuth Halide Perovskite Quantum Dots.
abstract: Lead halide perovskite quantum dots (QDs) are promising candidates for future lighting applications, due to their high quantum yield, narrow full width at half maximum (FWHM), and wide color gamut. However, the toxicity of lead represents a potential obstacle to their utilization. Although tin(II) has been used to replace lead in films and QDs, the high intrinsic defect density and oxidation vulnerability typically leads to unsatisfactory material properties. Bismuth, with much lower toxicity than lead, is promising to constitute lead-free perovskite materials because Bi3+is isoelectronic to Pb2+and more stable than Sn2+. Herein we report, for the first time, the synthesis and optical characterization of MA3Bi2Br9perovskite QDs with photoluminescence quantum yield (PLQY) up to 12 %, which is much higher than Sn-based perovskite nanocrystals. Furthermore, the photoluminescence (PL) peaks of MA3Bi2X9QDs could be easily tuned from 360 to 540 nm through anion exchange.
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Meiying
authors: M
authors: Leng
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Zhengwu
authors: Z
authors: Chen
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Ying
authors: Y
authors: Yang
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Zha
authors: Z
authors: Li
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Kai
authors: K
authors: Zeng
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Kanghua
authors: K
authors: Li
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Guangda
authors: G
authors: Niu
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Yisu
authors: Y
authors: He
authors: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Materials Science & Engineering, Beijing Institute of Technology, Haidian District, Beijing, 100081, China.
authors: Qingchao
authors: Q
authors: Zhou
authors: Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China.
authors: Jiang
authors: J
authors: Tang
keywords: MA3Bi2Br9; bismuth; perovskites; photoluminescence; quantum dots