title: Temperature-Dependent Performance of Printed Field-Effect Transistors with Solid Polymer Electrolyte Gating.
abstract: Printable, physical, and air-stable composite solid polymer electrolytes (CSPEs) with high ionic conductivity have been established as a suitable alternative to standard dielectric gate insulators for printed field-effect transistors (FETs) and logics. We have performed a stress and temperature stability study involving several CSPEs. Mechanical tensile and shear tests have been performed to determine the physical condition of CSPEs. A comprehensive temperature dependent study has been conducted within the working temperature range which electric double layer (EDL) capacitors or CSPE-gated FETs may typically experience during their lifetime. Moreover, calorimetric measurements have been performed to investigate the CSPEs stability, especially at low temperatures. Mechanical characterizations have shown tensile strength and shear modulus of the material that is typical for solid polymer electrolytes while DSC measurements show no change in the physical state within the measured temperature range. An expected increase in ionic conductivity of the CSPEs of nearly 1 order of magnitude has been observed with an increase in temperature, while an anomalous positive temperature relationship to EDL capacitance has also been noticed. Interestingly, the transistor performance characteristics, namely, on-current and threshold voltage, are found to be quite independent of the temperature, thus ensuring a large and stable operation temperature window for CSPE-gated FETs. The other parameters, subthreshold slope and the device mobility, have varied following the classical semiconductor behavior. In fact, the present study not only provides a detailed understanding of temperature dependence of the CSPE-gated FETs but also offers an insight into the physical and electrical properties of the CSPEs itself. Therefore, these results may very well help to comprehend and improve EDL capacitors, supercapacitors, and other devices that use CSPEs as the active material.
authors: Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technical University of Darmstadt (TUD) , D-64287 Darmstadt, Jovanka-Bontschits-Straße 2, Germany.
authors: Falk
authors: F
authors: von Seggern
authors: Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.
authors: Inna
authors: I
authors: Keskin
authors: Institute for Mechanical Process and Mechanics, Karlsruhe Institute of Technology (KIT) , Straße am Forum 8, D-76131 Karlsruhe, Germany.|Department of Chemical Engineering, KU Leuven , Celestijnenlaan 200f, 3001 Heverlee, Belgium.
authors: Erin
authors: E
authors: Koos
authors: Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.
authors: Robert
authors: R
authors: Kruk
authors: Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Institute of Materials Science, Technical University of Darmstadt (TUD) , D-64287 Darmstadt, Jovanka-Bontschits-Straße 2, Germany.
authors: Horst
authors: H
authors: Hahn
authors: Institute of Nanotechnology, Karlsruhe Institute of Technology (KIT) , D-76344 Eggenstein-Leopoldshafen, Hermann-von-Helmholtz Platz 1, Germany.|Department of Materials Engineering, Indian Institute of Science , Bangalore 560012, India.
authors: Subho
authors: S
authors: Dasgupta
keywords: composite solid polymer electrolyte; electrolyte gating; field effect transistor; physical properties; temperature dependence