title: Permanent ferroelectric retention of BiFeO3mesocrystal.
abstract: Non-volatile electronic devices based on magnetoelectric multiferroics have triggered new possibilities of outperforming conventional devices for applications. However, ferroelectric reliability issues, such as imprint, retention and fatigue, must be solved before the realization of practical devices. In this study, everlasting ferroelectric retention in the heteroepitaxially constrained multiferroic mesocrystal is reported, suggesting a new approach to overcome the failure of ferroelectric retention. Studied by scanning probe microscopy and transmission electron microscopy, and supported via the phase-field simulations, the key to the success of ferroelectric retention is to prevent the crystal from ferroelastic deformation during the relaxation of the spontaneous polarization in a ferroelectric nanocrystal.
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors: Ying-Hui
authors: YH
authors: Hsieh
authors: Department of Materials and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Fei
authors: F
authors: Xue
authors: Department of Materials and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Tiannan
authors: T
authors: Yang
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.
authors: Heng-Jui
authors: HJ
authors: Liu
authors: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.|National Center for Electron Microscopy in Beijing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors: Yuanmin
authors: Y
authors: Zhu
authors: Department of Physics, National Cheng Kung University, Tainan 70101, Taiwan.
authors: Yi-Chun
authors: YC
authors: Chen
authors: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors: Qian
authors: Q
authors: Zhan
authors: Key Lab of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241, China.
authors: Chun-Gang
authors: CG
authors: Duan
authors: Department of Materials and Engineering, Pennsylvania State University, University Park, Pennsylvania 16802, USA.
authors: Long-Qing
authors: LQ
authors: Chen
authors: Department of Physics, Durham University, Durham DH1 3LE, UK.
authors: Qing
authors: Q
authors: He
authors: Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan.|Institute of Physics, Academia Sinica, Taipei 11529, Taiwan.
authors: Ying-Hao
authors: YH
authors: Chu