Near-ultraviolet lateral photovoltaic effect in Fe3O4/3C-SiC Schottky junctions.
In this paper, we report a sensitive lateral photovoltaic effect (LPE) in Fe3O4/3C-SiC Schottky junctions with a fast relaxation time at near-ultraviolet wavelengths. The rectifying behavior suggests that the large build-in electric field was formed in the Schottky junctions. This device has excellent position sensitivity as high as 67.8 mV mm-1illuminated by a 405 nm laser. The optical relaxation time of the LPE is about 30 μs. The fast relaxation and high positional sensitivity of the LPE make the Fe3O4/3C-SiC junction a promising candidate for a wide range of ultraviolet/near-ultraviolet optoelectronic applications.
Bingqian
B
Song
Xianjie
X
Wang
Bo
B
Li
Lingli
L
Zhang
Zhe
Z
Lv
Yu
Y
Zhang
Yang
Y
Wang
Jinke
J
Tang
Ping
P
Xu
Bingsheng
B
Li
Yanqiang
Y
Yang
Yu
Y
Sui
Bo
B
Song