New Insights into Intrinsic Point Defects in V2VI3Thermoelectric Materials.
Defects and defect engineering are at the core of many regimes of material research, including the field of thermoelectric study. The 60-year history of V2VI3thermoelectric materials is a prime example of how a class of semiconductor material, considered mature several times, can be rejuvenated by better understanding and manipulation of defects. This review aims to provide a systematic account of theunderexploredintrinsic point defects in V2VI3compounds, with regard to (i) their formation and control, and (ii) their interplay with other types of defects towards higher thermoelectric performance. We herein present a convincing case that intrinsic point defects can be actively controlled by extrinsic doping and also via compositional, mechanical, and thermal control at various stages of material synthesis. An up-to-date understanding of intrinsic point defects in V2VI3compounds is summarized in a (χ, r)-model and applied to elucidating the donor-like effect. These new insights not only enable more innovative defect engineering in other thermoelectric materials but also, in a broad context, contribute to rational defect design in advanced functional materials at large.
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Tiejun
T
Zhu
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Lipeng
L
Hu
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Xinbing
X
Zhao
Department of Physics and Astronomy Clemson University Clemson SC 29634 USA.
Jian
J
He
Bi2Te3; V2VI3 semiconductors; defect engineering; intrinsic point defects; thermoelectric properties