ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.
A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1and detectivity of more than 1.02 × 1013Jones (Jones = cm Hz1/2W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1to 1915 A W-1and the detectivity is improved from 5.8 × 1012to 1.0 × 1013Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.
College of Microelectronics, College of Information Science & Electronic Engineering, Zhejiang University, Hangzhou 310027, People's Republic of China.
Yanghua
Y
Lu
Zhiqian
Z
Wu
Wenli
W
Xu
Shisheng
S
Lin