Resistive Switching in All-Printed, Flexible and Hybrid MoS2-PVA Nanocomposite based Memristive Device Fabricated by Reverse Offset.
Owing to the increasing interest in the nonvolatile memory devices, resistive switching based on hybrid nanocomposite of a 2D material, molybdenum disulphide (MoS2) and polyvinyl alcohol (PVA) is explored in this work. As a proof of concept, we have demonstrated the fabrication of a memory device with the configuration of PET/Ag/MoS2-PVA/Ag via an all printed, hybrid, and state of the art fabrication approach. Bottom Ag electrodes, active layer of hybrid MoS2-PVA nanocomposite and top Ag electrode are deposited by reverse offset, electrohydrodynamic (EHD) atomization and electrohydrodynamic (EHD) patterning respectively. The fabricated device displayed characteristic bistable, nonvolatile and rewritable resistive switching behavior at a low operating voltage. A decent off/on ratio, high retention time, and large endurance of 1.28 × 102, 105sec and 1000 voltage sweeps were recorded respectively. Double logarithmic curve satisfy the trap controlled space charge limited current (TCSCLC) model in high resistance state (HRS) and ohmic model in low resistance state (LRS). Bendability test at various bending diameters (50-2 mm) for 1500 cycles was carried out to show the mechanical robustness of fabricated device.
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Muhammad Muqeet
MM
Rehman
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Ghayas Uddin
GU
Siddiqui
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Jahan Zeb
JZ
Gul
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Soo-Wan
SW
Kim
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Jong Hwan
JH
Lim
Department of Mechatronics Engineering, Jeju National University, Jeju, Republic of Korea.
Kyung Hyun
KH
Choi