Research on Design of Tri-color Shift Device.
An azimuth-tuned tri-color shift device based on an embedded subwavelength one-dimensional rectangular structure with single period is proposed. High reflection efficiencies for both TE and TM polarizations can be achieved simultaneously. Under an oblique incidence of 60°, the reflection efficiencies can reach up to 85, 86, and 100 % in blue (azimuth of 24°), green (azimuth of 63°), and red (azimuth of 90°) waveband, respectively. Furthermore, the laws of influence of device period, groove depth, coating thickness, and incident angle on reflection characteristics are investigated and exposed, and feasibility of the device is demonstrated. The proposed device realizes tri-color shift for natural light using a simple structure. It exhibits high efficiency as well as good security. Such a device can be fabricated by the existing embossing and coating technique. All these break through the limit of bi-color shift anti-counterfeiting technology and have great applications in the field of optically variable image security.
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Ping
P
Xu
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China. xyuan@szu.edu.cn.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China. xyuan@szu.edu.cn.
Xia
X
Yuan
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Haixuan
H
Huang
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Tuo
T
Yang
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Yanyan
Y
Huang
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Tengfei
T
Zhu
College of Electronic Science and Technology, Shenzhen University, Shenzhen, 518060, China.|Institute of Micro-Nano Optoelectronic Technology, Shenzhen University, Shenzhen, 518060, China.
Shaotuo
S
Tang
College of Optoelectronic Engineering, Shenzhen University, Shenzhen, 518060, China.
Wenda
W
Peng
Anti-counterfeiting; Rectangular single periodic structure; Subwavelength; Tri-color shift device