Controlled growth of large-area anisotropic ReS2atomic layer and its photodetector application.
As an anisotropic 2D layered material, rhenium disulfide (ReS2) has attracted much attention because of its unusual properties and promising applications in electronic and optoelectronic devices. However, the low lattice symmetry and interlayer decoupling of ReS2make asymmetric growth and out-of-plane growth occur quite easily; therefore, thick flake, dendritic and flower-like structures of ReS2have mostly been obtained previously. Here, we report on an approach based on space-confined epitaxial growth for the controlled synthesis of ReS2films. Using this approach, large-area and high-quality ReS2films with uniform monolayer thickness can grow on a mica substrate. Furthermore, the weak van der Waals interaction between the surface of mica and ReS2clusters, which favors surface-confined growth while avoiding out-of-plane growth, is critical for growing ReS2with uniform monolayer thickness. The morphological evolution of ReS2with the growth temperature reveals that asymmetric growth can be suppressed at relatively low temperatures. A ReS2field-effect transistor displayed a current on/off ratio of 106and an electron mobility of up to 40 cm2V-1s-1, with outstanding photoresponsivity of 12 A W-1. This work not only promotes the large-scale employment of ReS2in high-performance optoelectronic devices, but also provides a means of controlling the unusual growth behavior of low-lattice-symmetry 2D layered materials.
Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an 710119, P. R. China. xuhua-nano@snnu.edu.cn.
Xiaobo
X
Li
Fangfang
F
Cui
Qingliang
Q
Feng
Gang
G
Wang
Xiaosa
X
Xu
Juanxia
J
Wu
Nannan
N
Mao
Xing
X
Liang
Zhongyue
Z
Zhang
Jin
J
Zhang
Hua
H
Xu