High brightness formamidinium lead bromide perovskite nanocrystal light emitting devices.
Formamidinium lead halide (FAPbX3) has attracted greater attention and is more prominent recently in photovoltaic devices due to its broad absorption and higher thermal stability in comparison to more popular methylammonium lead halide MAPbX3. Herein, a simple and highly reproducible room temperature synthesis of device grade high quality formamidinium lead bromide CH(NH2)2PbBr3(FAPbBr3) colloidal nanocrystals (NC) having high photoluminescence quantum efficiency (PLQE) of 55-65% is reported. In addition, we demonstrate high brightness perovskite light emitting device (Pe-LED) with these FAPbBr3perovskite NC thin film using 2,2',2″-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) commonly known as TPBi and 4,6-Bis(3,5-di(pyridin-3-yl)phenyl)-2-methylpyrimidine (B3PYMPM) as electron transport layers (ETL). The Pe-LED device with B3PYMPM as ETL has bright electroluminescence of up to 2714 cd/m2, while the Pe-LED device with TPBi as ETL has higher peak luminous efficiency of 6.4 cd/A and peak luminous power efficiency of 5.7 lm/W. To our knowledge this is the first report on high brightness light emitting device based on CH(NH2)2PbBr3widely known as FAPbBr3nanocrystals in literature.
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
Ajay
A
Perumal
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
Sushant
S
Shendre
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Mingjie
M
Li
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Yong Kang Eugene
YK
Tay
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.|Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.|UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey.
Vijay Kumar
VK
Sharma
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Shi
S
Chen
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Zhanhua
Z
Wei
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
Qing
Q
Liu
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
Yuan
Y
Gao
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
Pio John S
PJ
Buenconsejo
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.
Swee Tiam
ST
Tan
School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
Chee Lip
CL
Gan
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Qihua
Q
Xiong
Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.
Tze Chien
TC
Sum
LUMINOUS! Center of Excellence for Semiconductor Lighting and Displays, School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore.|Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 637371, Singapore.|UNAM-Institute of Materials Science and Nanotechnology, Department of Electrical and Electronics Engineering, Department of Physics, Bilkent University, Ankara, 06800, Turkey.
Hilmi Volkan
HV
Demir