Metal oxide-graphene field-effect transistor: interface trap density extraction model.
A simple to implement model is presented to extract interface trap density of graphene field effect transistors. The presence of interface trap states detrimentally affects the device drain current-gate voltage relationshipIds-Vgs. At the moment, there is no analytical method available to extract the interface trap distribution of metal-oxide-graphene field effect transistor (MOGFET) devices. The model presented here extracts the interface trap distribution of MOGFET devices making use of available experimental capacitance-gate voltageCtot-Vgsdata and a basic set of equations used to define the device physics of MOGFET devices. The model was used to extract the interface trap distribution of 2 experimental devices. Device parameters calculated using the extracted interface trap distribution from the model, including surface potential, interface trap charge and interface trap capacitance compared very well with their respective experimental counterparts. The model enables accurate calculation of the surface potential affected by trap charge. Other models ignore the effect of trap charge and only calculate the ideal surface potential. Such ideal surface potential when used in a surface potential based drain current model will result in an inaccurate prediction of the drain current. Accurate calculation of surface potential that can later be used in drain current model is highlighted as a major advantage of the model.
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia.
Faraz
F
Najam
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia; Intel Technology Sdn Bhd, Bayan Lepas Free Industrial Zone, Phase 3, Halaman Kampung Jawa, 11900, Bayan Lepas, Pulau Pinang, 11900, Malaysia.
Kah Cheong
KC
Lau
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia.
Cheng Siong
CS
Lim
Department of Electrical, Electronic and Control Engineering and IITC, Hankyong National University, Anseong 456-749, Korea.
Yun Seop
YS
Yu
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia.
Michael Loong Peng
ML
Tan
drain current compact model; interface trap distribution; metal-oxide-graphene field-effect transistor (MOGFET); surface potential