Tribotronic Enhanced Photoresponsivity of a MoS2Phototransistor.
Molybdenum disulfide (MoS2) has attracted a great attention as an excellent 2D material for future optoelectronic devices. Here, a novel MoS2tribotronic phototransistor is developed by a conjunction of a MoS2phototransistor and a triboelectric nanogenerator (TENG) in sliding mode. When an external friction layer produces a relative sliding on the device, the induced positive charges on the back gate of the MoS2phototransistor act as a "gate" to increase the channel conductivity as the traditional back gate voltage does. With the sliding distance increases, the photoresponsivity of the device is drastically enhanced from 221.0 to 727.8 A W-1at the 100 mW cm-2UV excitation intensity and 1 V bias voltage. This work has extended the emerging tribotronics to the field of photodetection based on 2D material, and demonstrated a new way to realize the adjustable photoelectric devices with high photoresponsivity via human interfacing.
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Yaokun
Y
Pang
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Fei
F
Xue
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Longfei
L
Wang
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Jian
J
Chen
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Jianjun
J
Luo
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Tao
T
Jiang
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China.
Chi
C
Zhang
Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences National Center for Nanoscience and Technology Beijing 100083 P. R. China; School of Material Science and Engineering Georgia Institute of Technology Atlanta GA 30332 USA.
Zhong Lin
ZL
Wang
MoS2; photoresponsivity; phototransistor; triboelectric nanogenerator; tribotronics