Chemical Vapor Deposition of High-Quality Large-Sized MoS2Crystals on Silicon Dioxide Substrates.
Large-sized MoS2crystalscan be grown on SiO2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS2crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS2crystals can reach ≈30 cm2V-1s-1, which is comparable to those of exfoliated flakes.
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Jianyi
J
Chen
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Wei
W
Tang
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Bingbing
B
Tian
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Bo
B
Liu
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Xiaoxu
X
Zhao
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Yanpeng
Y
Liu
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Tianhua
T
Ren
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Wei
W
Liu
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Dechao
D
Geng
UNIST Central Research Facilities (UCRF) Institute of Basic Science Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50 Ulsan 689-798 Republic of Korea.
Hu Young
HY
Jeong
Department of Chemistry Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50 Ulsan 689-798 Republic of Korea; Department of Energy Engineering Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50 Ulsan 689-798 Republic of Korea; UNIST Central Research Facilities (UCRF) Institute of Basic Science Ulsan National Institute of Science and Technology (UNIST) UNIST-gil 50 Ulsan 689-798 Republic of Korea.
Hyeon Suk
HS
Shin
Materials Science and Technology Division Oak Ridge National Laboratory Oak Ridge TN 37831 USA.
Wu
W
Zhou
Centre for Advanced 2D Materials National University of Singapore 6 Science Drive 2 Singapore 117546 Singapore; Department of Chemistry National University of Singapore 3 Science Drive 3 Singapore 117546 Singapore.
Kian Ping
KP
Loh
chemical vapor deposition; high quality; large size; molybdenum disulfide; silicon dioxide