Enhancing the Figure of Merit of Heavy-Band Thermoelectric Materials Through Hierarchical Phonon Scattering.
Hierarchical scatteringis suggested as an effective strategy to enhance the figure of meritzTof heavy-band thermoelectric materials. Heavy-band FeNbSb half-Heusler system with intrinsically low carrier mean free path is demonstrated as a paradigm. An enhancedzTof 1.34 is obtained at 1150 K for the Fe1.05Nb0.75Ti0.25Sb compound with intentionally designed hierarchical scattering centers.
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Chenguang
C
Fu
Department of Physics South University of Science and Technology of China Shenzhen 518055 P.R. China; Department of Materials Science and Engineering National University of Singapore 7 Engineering Drive 1 Singapore 117575 Singapore.
Haijun
H
Wu
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Yintu
Y
Liu
Department of Physics South University of Science and Technology of China Shenzhen 518055 P.R. China.
Jiaqing
J
He
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Xinbing
X
Zhao
State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 P.R. China.
Tiejun
T
Zhu
half‐Heusler alloys; semiconductors; thermoelectrics