Hydrogenated monolayer graphene with reversible and tunable wide band gap and its field-effect transistor.
Graphene is currently at the forefront of cutting-edge science and technology due to exceptional electronic, optical, mechanical, and thermal properties. However, the absence of a sizeable band gap in graphene has been a major obstacle for application. To open and control a band gap in functionalized graphene, several gapping strategies have been developed. In particular, hydrogen plasma treatment has triggered a great scientific interest, because it has been known to be an efficient way to modify the surface of single-layered graphene and to apply for standard wafer-scale fabrication. Here we show a monolayer chemical-vapour-deposited graphene hydrogenated by indirect hydrogen plasma without structural defect and we demonstrate that a band gap can be tuned as wide as 3.9 eV by varying hydrogen coverage. We also show a hydrogenated graphene field-effect transistor, showing that on/off ratio changes over three orders of magnitude at room temperature.
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei, Seodaemun, Seoul 03722, Korea.
Jangyup
J
Son
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei, Seodaemun, Seoul 03722, Korea.
Soogil
S
Lee
Department of Chemistry, Seoul National University, Seoul 08826, Korea.
Sang Jin
SJ
Kim
Department of Physics, Yonsei University, Seoul 03722, Korea.
Byung Cheol
BC
Park
Pohang Accelerator Laboratory, Pohang 37673, Korea.
Han-Koo
HK
Lee
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei, Seodaemun, Seoul 03722, Korea.
Sanghoon
S
Kim
Department of Physics, Yonsei University, Seoul 03722, Korea.
Jae Hoon
JH
Kim
Department of Chemistry, Seoul National University, Seoul 08826, Korea.
Byung Hee
0000-0001-8355-8875
BH
Hong
Department of Materials Science and Engineering, Yonsei University, 50 Yonsei, Seodaemun, Seoul 03722, Korea.
Jongill
J
Hong