Schottky barrier tuning of the single-layer MoS2on magnetic metal substrates through vacancy defects and hydrogenation.
For the practical device application of the two-dimensional semiconducting MoS2, it is a critical issue to manipulate the electronic and magnetic properties locally at its contact to the metal electrode. For the tuning of those properties, we have proposed the vacancy-defective 1L-MoS2or the hydrogenated 1L-MoS2at the metal [Co(0001) or Ni(111)] contacts and performed first-principles electronic structure calculations. By controlling the atomic vacancy defects and the hydrogen coverages, we investigate the Schottky barrier heights and charge and spin transfers at the interface. Our findings provide a physical insight into the practical device design using the two-dimensional MoS2.
Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea. jdlee@dgist.ac.kr.
Won Seok
WS
Yun
Department of Emerging Materials Science, DGIST, Daegu 42988, Republic of Korea. jdlee@dgist.ac.kr.
J D
JD
Lee