Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2p-n heterojunction diodes.
We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2and pentacene. The pentacene/MoS2p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Jae-Keun
JK
Kim
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Kyungjune
K
Cho
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Tae-Young
TY
Kim
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Jinsu
J
Pak
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Jingon
J
Jang
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Younggul
Y
Song
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Youngrok
Y
Kim
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Barbara Yuri
BY
Choi
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Seungjun
S
Chung
Jeonju Center, Korea Basic Science Institute, Jeonju, Jeollabuk-do 54907, Korea.
Woong-Ki
WK
Hong
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Korea.
Takhee
T
Lee