Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic.
Recently, negative differential resistance devices have attracted considerable attention due to their folded current-voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Jaewoo
J
Shim
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Seyong
S
Oh
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Dong-Ho
DH
Kang
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Seo-Hyeon
SH
Jo
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Muhammad Hasnain
MH
Ali
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Woo-Young
WY
Choi
Frontier Technology Lab, R&D Headquarters, SK Hynix Co. Ltd., Ichon 460-701, Korea.
Keun
K
Heo
Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Jaeho
J
Jeon
Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Sungjoo
S
Lee
Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Minwoo
M
Kim
Sungkyunkwan University Advanced Institute of Nanotechnology, Sungkyunkwan University, Suwon 440-746, Korea.
Young Jae
0000-0001-6172-3817
YJ
Song
School of Electronic and Electrical Engineering, Sungkyunkwan University, Suwon 440-746, Korea.
Jin-Hong
JH
Park