title: Numerical study on the optical and carrier recombination processes in GeSn alloy for E-SWIR and MWIR optoelectronic applications.
abstract: The Ge1-xSnxalloy is a promising material for optoelectronic applications. It offers a tunable wavelength in the infrared (IR) spectrum and high compatibility with complementary metal-oxide-semiconductor (CMOS) technology. However, difficulties in growing device quality Ge1-xSnxfilms has left the potentiality of this material unexplored. Recent advances in technological processes have renewed the interest toward this material paving the way to potential applications. In this work, we perform a numerical investigation on absorption coefficient, radiative recombination rate, and Auger recombination properties of intrinsic and doped Ge1-xSnxfor application in the extended-short wavelength infrared and medium wavelength infrared spectrum ranges. We apply a Green's function based model to the Ge1-xSnxfull electronic band structure determined through an empirical pseudopotential method and determine the dominant recombination mechanism between radiative and Auger processes over a wide range of injection levels.
authors.forename: Stefano
authors.initials: S
authors.lastname: Dominici
authors.forename: Hanqing
authors.initials: H
authors.lastname: Wen
authors.forename: Francesco
authors.initials: F
authors.lastname: Bertazzi
authors.forename: Michele
authors.initials: M
authors.lastname: Goano
authors.forename: Enrico
authors.initials: E
authors.lastname: Bellotti