title: Giant Rashba Splitting in Pb1-xSnxTe (111) Topological Crystalline Insulator Films Controlled by Bi Doping in the Bulk.
abstract: The topological properties of lead-tin chalcogenide topological crystalline insulators can be widely tuned by temperature and composition. It is shown that bulk Bi doping of epitaxial Pb1-xSnxTe (111) films induces a giant Rashba splitting at the surface that can be tuned by the doping level. Tight binding calculations identify their origin as Fermi level pinning by trap states at the surface.
authors.affiliation: Institute for Semiconductor and Solid State Physics, Johannes Kepler Universität, Altenberger Str. 69, 4040, Linz, Austria.|National Technical University "Kharkiv Polytechnic Institute", Frunze Str. 21, 61002, Kharkiv, Ukraine.
authors.forename: Valentine V
authors.initials: VV
authors.lastname: Volobuev
authors.affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Str. 15,, 12489, Berlin, Germany.
authors.forename: Partha S
authors.initials: PS
authors.lastname: Mandal
authors.affiliation: Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02-668, Warszawa, Poland.
authors.forename: Marta
authors.initials: M
authors.lastname: Galicka
authors.affiliation: Department of Condensed Matter Physics, Masaryk University, Kotlárˇská 2, 61137, Brno, Czech Republic.
authors.forename: Ondřej
authors.initials: O
authors.lastname: Caha
authors.affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Str. 15,, 12489, Berlin, Germany.
authors.forename: Jaime
authors.initials: J
authors.lastname: Sánchez-Barriga
authors.affiliation: Consiglio Nazionale delle Ricerche CNR-SPIN, Via dei Vestini 31, 66100, Chieti, Italy.|Institut für Physik und Astrophysik, Universität Würzburg, Am Hubland Campus Süd, Würzburg, 97074, Germany.
authors.forename: Domenico
authors.initials: D
authors.lastname: Di Sante
authors.affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Str. 15,, 12489, Berlin, Germany.
authors.forename: Andrei
authors.initials: A
authors.lastname: Varykhalov
authors.affiliation: Institute for Semiconductor and Solid State Physics, Johannes Kepler Universität, Altenberger Str. 69, 4040, Linz, Austria.
authors.forename: Amir
authors.initials: A
authors.lastname: Khiar
authors.affiliation: Consiglio Nazionale delle Ricerche CNR-SPIN, Via dei Vestini 31, 66100, Chieti, Italy.
authors.forename: Silvia
authors.initials: S
authors.lastname: Picozzi
authors.affiliation: Institute for Semiconductor and Solid State Physics, Johannes Kepler Universität, Altenberger Str. 69, 4040, Linz, Austria.
authors.forename: Günther
authors.initials: G
authors.lastname: Bauer
authors.affiliation: Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02-668, Warszawa, Poland.
authors.forename: Perla
authors.initials: P
authors.lastname: Kacman
authors.affiliation: Institute of Physics, Polish Academy of Sciences, Aleja Lotników 32/46, PL-02-668, Warszawa, Poland.
authors.forename: Ryszard
authors.initials: R
authors.lastname: Buczko
authors.affiliation: Helmholtz-Zentrum Berlin für Materialien und Energie, Albert-Einstein Str. 15,, 12489, Berlin, Germany.
authors.forename: Oliver
authors.initials: O
authors.lastname: Rader
authors.affiliation: Institute for Semiconductor and Solid State Physics, Johannes Kepler Universität, Altenberger Str. 69, 4040, Linz, Austria.
authors.forename: Gunther
authors.initials: G
authors.lastname: Springholz
keywords: IV-VI semiconductors; Rashba effect; crystalline insulators; molecular beam epitaxy; photoemission spectroscopy