title: An Antimony Selenide Molecular Ink for Flexible Broadband Photodetectors.
abstract: The need for low-cost high-performance broadband photon detection with sensitivity in the near infrared (NIR) has driven interest in new materials that combine high absorption with traditional electronic infrastructure (CMOS) compatibility. Here, we demonstrate a facile, low-cost and scalable, catalyst-free one-step solution-processed approach to grow one-dimensional Sb2Se3nanostructures directly on flexible substrates for high-performance NIR photodetectors. Structural characterization and compositional analyses reveal high-quality single-crystalline material with orthorhombic crystal structure and a near-stoichiometric Sb/Se atomic ratio. We measure a direct band gap of 1.12 eV, which is consistent with predictions from theoretical simulations, indicating strong NIR potential. The fabricated metal-semiconductor-metal photodetectors exhibit fast response (on the order of milliseconds) and high performance (responsivity ~ 0.27 A/W) as well as excellent mechanical flexibility and durability. The results demonstrate the potential of molecular-ink-based Sb2Se3nanostructures for flexible electronic and broadband optoelectronic device applications.
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Md Rezaul
authors.initials: MR
authors.lastname: Hasan
authors.affiliation: Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA.
authors.forename: Ebuka S
authors.initials: ES
authors.lastname: Arinze
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Arunima K
authors.initials: AK
authors.lastname: Singh
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Vladimir P
authors.initials: VP
authors.lastname: Oleshko
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Shiqi
authors.initials: S
authors.lastname: Guo
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Asha
authors.initials: A
authors.lastname: Rani
authors.affiliation: Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA.
authors.forename: Yan
authors.initials: Y
authors.lastname: Cheng
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Irina
authors.initials: I
authors.lastname: Kalish
authors.affiliation: Department of Electrical and Computer Engineering, The George Washington University, Washington, DC 20052, USA.
authors.forename: Mona E
authors.initials: ME
authors.lastname: Zaghloul
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, 4400 University Drive, Fairfax, VA 22030, USA.
authors.forename: Mulpuri V
authors.initials: MV
authors.lastname: Rao
authors.affiliation: Semiconductor and Dimensional Metrology Division, Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Nhan V
authors.initials: NV
authors.lastname: Nguyen
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Abhishek
authors.initials: A
authors.lastname: Motayed
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Albert V
authors.initials: AV
authors.lastname: Davydov
authors.affiliation: Department of Electrical and Computer Engineering, Johns Hopkins University, 3400 North Charles Street, Baltimore, MD 21218, USA.
authors.forename: Susanna M
authors.initials: SM
authors.lastname: Thon
authors.affiliation: Materials Science and Engineering Division, Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899 USA.
authors.forename: Ratan
authors.initials: R
authors.lastname: Debnath
keywords: antimony selenide; flexible; nanowire; photodetector