title: Low temperature-grown GaAs carrier lifetime evaluation by double optical pump terahertz time-domain emission spectroscopy.
abstract: We present the use of a "double optical pump" technique in terahertz time-domain emission spectroscopy as an alternative method to investigate the lifetime of photo-excited carriers in semiconductors. Compared to the commonly employed optical pump-probe transient photo-reflectance, this non-contact and room temperature characterization technique allows relative ease in achieving optical alignment. The technique was implemented to evaluate the carrier lifetime in low temperature-grown gallium arsenide (LT-GaAs). The carrier lifetime values deduced from "double optical pump" THz emission decay curves show good agreement with data obtained from standard transient photo-reflectance measurements on the same LT-GaAs samples grown at 250 °C and 310 °C.
authors.forename: Valynn Katrine
authors.initials: VK
authors.lastname: Mag-Usara
authors.forename: Stefan
authors.initials: S
authors.lastname: Funkner
authors.forename: Gudrun
authors.initials: G
authors.lastname: Niehues
authors.forename: Elizabeth Ann
authors.initials: EA
authors.lastname: Prieto
authors.forename: Maria Herminia
authors.initials: MH
authors.lastname: Balgos
authors.forename: Armando
authors.initials: A
authors.lastname: Somintac
authors.forename: Elmer
authors.initials: E
authors.lastname: Estacio
authors.forename: Arnel
authors.initials: A
authors.lastname: Salvador
authors.forename: Kohji
authors.initials: K
authors.lastname: Yamamoto
authors.forename: Muneaki
authors.initials: M
authors.lastname: Hase
authors.forename: Masahiko
authors.initials: M
authors.lastname: Tani