title: High-resolution three-dimensional structural microscopy by single-angle Bragg ptychography.
abstract: Coherent X-ray microscopy by phase retrieval of Bragg diffraction intensities enables lattice distortions within a crystal to be imaged at nanometre-scale spatial resolutions in three dimensions. While this capability can be used to resolve structure-property relationships at the nanoscale under working conditions, strict data measurement requirements can limit the application of current approaches. Here, we introduce an efficient method of imaging three-dimensional (3D) nanoscale lattice behaviour and strain fields in crystalline materials with a methodology that we call 3D Bragg projection ptychography (3DBPP). This method enables 3D image reconstruction of a crystal volume from a series of two-dimensional X-ray Bragg coherent intensity diffraction patterns measured at a single incident beam angle. Structural information about the sample is encoded along two reciprocal-space directions normal to the Bragg diffracted exit beam, and along the third dimension in real space by the scanning beam. We present our approach with an analytical derivation, a numerical demonstration, and an experimental reconstruction of lattice distortions in a component of a nanoelectronic prototype device.
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: S O
authors.initials: SO
authors.lastname: Hruszkewycz
authors.affiliation: Aix-Marseille University, CNRS, Centrale Marseille, Institut Fresnel, 13013 Marseille, France.
authors.forename: M
authors.initials: M
authors.lastname: Allain
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: M V
authors.initials: MV
authors.lastname: Holt
authors.affiliation: IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA.
authors.forename: C E
authors.initials: CE
authors.lastname: Murray
authors.affiliation: IBM Semiconductor Research and Development Center, Hopewell Junction, New York 12533, USA.
authors.forename: J R
authors.initials: JR
authors.lastname: Holt
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: P H
authors.initials: PH
authors.lastname: Fuoss
authors.affiliation: Aix-Marseille University, CNRS, Centrale Marseille, Institut Fresnel, 13013 Marseille, France.
authors.forename: V
authors.initials: V
authors.lastname: Chamard