title: Sub-50 nm Channel Vertical Field-Effect Transistors using Conventional Ink-Jet Printing.
abstract: A printed vertical field-effect transistor is demonstrated, which decouples critical device dimensions from printing resolution. A printed mesoporous semiconductor layer, sandwiched between vertically stacked drive electrodes, provides <50 nm channel lengths. A polymer-electrolyte-based gate insulator infiltrates the percolating pores of the mesoporous channel to accumulate charge carriers at every semiconductor domain, thereby, resulting in an unprecedented current density of MA cm-2.
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Tessy Theres
authors.initials: TT
authors.lastname: Baby
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Manuel
authors.initials: M
authors.lastname: Rommel
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany.
authors.forename: Falk
authors.initials: F
authors.lastname: von Seggern
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Pascal
authors.initials: P
authors.lastname: Friederich
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Reitz
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Simone
authors.initials: S
authors.lastname: Dehm
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.|Karlsruhe Nano Micro Facility, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Kübel
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Wenzel
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.|KIT-TUD Joint Research Laboratory Nanomaterials, Technische Universität Darmstadt (TUD), Institute of Materials Science, Jovanka-Bontschits-Str. 2, 64287, Darmstadt, Germany.
authors.forename: Horst
authors.initials: H
authors.lastname: Hahn
authors.affiliation: Institute for Nanotechnology, Karlsruhe Institute of Technology (KIT), Hermann-von-Helmholtz Platz 1, 76344, Eggenstein-Leopoldshafen, Germany.|Department of Materials Engineering, Indian Institute of Science, Bangalore, 560012, India.
authors.forename: Subho
authors.initials: S
authors.lastname: Dasgupta
keywords: composite solid polymer electrolytes; current density; ink-jet printing; porous semiconductors; vertical field-effect transistors