title: Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots.
abstract: Monolayer molybdenum disulfide (MoS2), consisting of covalently bonded S-Mo-S sandwiched layers, has high carrier mobility and a direct bandgap of 1.8 eV, offering properties for electronic and optoelectronic devices with high performance. Usually, it is essential to modulate the carrier concentrations and conductivities of monolayer MoS2for practical applications. In this paper, black phosphorus (BP) quantum dots (QDs) were synthesized by a liquid exfoliation method successfully, and have a diameter of ∼5 nm as confirmed with a transmission electron microscope (TEM). BP QDs were utilized to decorate monolayer MoS2grown by chemical vapor deposition (CVD). The Raman and PL spectra of the BP QD/MoS2hybrid structure clearly indicate that BP QDs are an effective n-type doping scheme for monolayer MoS2. Back-gated monolayer MoS2transistors were fabricated and show an improved source-drain current after BP QD modifications. A high electron concentration of ∼5.39 × 1012cm-2in monolayer MoS2was achieved, which is beneficial for designing FETs and photodetector devices with novel functions.
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
authors.forename: Xinyue
authors.initials: X
authors.lastname: Niu
authors.forename: Haolei
authors.initials: H
authors.lastname: Qian
authors.forename: Liao
authors.initials: L
authors.lastname: Guan
authors.forename: Ming
authors.initials: M
authors.lastname: Zhao
authors.forename: Xi
authors.initials: X
authors.lastname: Ding
authors.forename: Shucheng
authors.initials: S
authors.lastname: Zhang
authors.forename: Yewu
authors.initials: Y
authors.lastname: Wang
authors.forename: Jian
authors.initials: J
authors.lastname: Sha