title: Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δThin Films on (110) NdGaO3.
abstract: Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo2O5.5+δfilms. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.
authors.affiliation: State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Shaanxi 710049, P. R. China.|Department of Physics and Astronomy, University of Texas at San Antonio, TX 78249, USA.
authors.forename: Chunrui
authors.initials: C
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, P. R. China.|Department of Physics, Applied Physics, &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
authors.forename: Dong
authors.initials: D
authors.lastname: Han
authors.affiliation: Electronic Materials Research Laboratory and International Center for Dielectric Research, Xi'an Jiaotong University, Shaanxi 710049, P. R. China.
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, TX 78249, USA.
authors.forename: Gregory
authors.initials: G
authors.lastname: Collins
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, TX 78249, USA.
authors.forename: Haibin
authors.initials: H
authors.lastname: Wang
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, TX 78249, USA.
authors.forename: Xing
authors.initials: X
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Sichuan 610054, P. R. China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Lin
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Arlington, Arlington, Texas 76019, USA .
authors.forename: Jiechao
authors.initials: J
authors.lastname: Jiang
authors.affiliation: Department of Physics, Applied Physics, &Astronomy, Rensselaer Polytechnic Institute, Troy, NY 12180, USA.
authors.forename: Shengbai
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, TX 78249, USA.
authors.forename: Chonglin
authors.initials: C
authors.lastname: Chen