title: A Novel Nanofabrication Technique of Silicon-Based Nanostructures.
abstract: A novel nanofabrication technique which can produce highly controlled silicon-based nanostructures in wafer scale has been proposed using a simple amorphous silicon (α-Si) material as an etch mask. SiO2nanostructures directly fabricated can serve as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate, or other dielectric materials to form electrically functional nanostructures and devices. In this paper, two typical silicon-based nanostructures such as nanoline and nanofin have been successfully fabricated by this technique, demonstrating excellent etch performance. In addition, silicon nanostructures fabricated above can be further trimmed to less than 10 nm by combing with assisted post-treatment methods. The novel nanofabrication technique will be expected a new emerging technology with low process complexity and good compatibility with existing silicon integrated circuit and is an important step towards the easy fabrication of a wide variety of nanoelectronics, biosensors, and optoelectronic devices.
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China. menglingkuan@ime.ac.cn.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China. menglingkuan@ime.ac.cn.
authors.forename: Lingkuan
authors.initials: L
authors.lastname: Meng
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Xiaobin
authors.initials: X
authors.lastname: He
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Jianfeng
authors.initials: J
authors.lastname: Gao
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Li
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Yayi
authors.initials: Y
authors.lastname: Wei
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics of Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Jiang
authors.initials: J
authors.lastname: Yan
keywords: Amorphous silicon; Nanofabrication technique; Nanofin; Nanoline; Nanotrench; Silicon-based nanostructures