title: Universal domain wall dynamics under electric field in Ta/CoFeB/MgO devices with perpendicular anisotropy.
abstract: Electric field effects in ferromagnetic metal/dielectric structures provide a new route to control domain wall dynamics with low-power dissipation. However, electric field effects on domain wall velocities have only been observed so far in the creep regime where domain wall velocities are low due to strong interactions with pinning sites. Here we show gate voltage modulation of domain wall velocities ranging from the creep to the flow regime in Ta/Co40Fe40B20/MgO/TiO2structures with perpendicular magnetic anisotropy. We demonstrate a universal description of the role of applied electric fields in the various pinning-dependent regimes by taking into account an effective magnetic field being linear with the electric field. In addition, the electric field effect is found to change sign in the Walker regime. Our results are consistent with voltage-induced modification of magnetic anisotropy. Our work opens new opportunities for the study and optimization of electric field effect at ferromagnetic metal/insulator interfaces.
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Weiwei
authors.initials: W
authors.lastname: Lin
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Vernier
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Guillaume
authors.initials: G
authors.lastname: Agnus
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Karin
authors.initials: K
authors.lastname: Garcia
authors.affiliation: Singulus Technologies AG, 63796 Kahl am Main, Germany.
authors.forename: Berthold
authors.initials: B
authors.lastname: Ocker
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Weisheng
authors.initials: W
authors.lastname: Zhao
authors.affiliation: Center for Memory and Recording Research, University of California San Diego, La Jolla, California 92093, USA.
authors.forename: Eric E
authors.identifier: 0000-0002-4725-9509
authors.initials: EE
authors.lastname: Fullerton
authors.affiliation: Center for Nanoscience and Nanotechnology, Université Paris-Sud-CNRS, UMR 9001, 91405 Orsay, France.
authors.forename: Dafiné
authors.initials: D
authors.lastname: Ravelosona