title: Black Phosphorus N-Type Field-Effect Transistor with Ultrahigh Electron Mobility via Aluminum Adatoms Doping.
abstract: High-performance black phosphorus n-type field-effect transistors are realized using Al adatoms as effective electron donors, which achieved a record high mobility of >1495 cm2V-1s-1at 260 K. The electron mobility is corroborated to charged-impurity scattering at low temperature, whilst metallic-like conduction is observed at high gate bias with increased carrier density due to enhanced electron-phonon interactions at high temperature.
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Amit
authors.initials: A
authors.lastname: Prakash
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Yongqing
authors.initials: Y
authors.lastname: Cai
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Yong-Wei
authors.initials: YW
authors.lastname: Zhang
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Kah-Wee
authors.initials: KW
authors.lastname: Ang
keywords: aluminum adatoms; black phosphorus; doping; mobility; phosphorene