title: MoS2 transistors with 1-nanometer gate lengths.
abstract: Scaling of silicon (Si) transistors is predicted to fail below 5-nanometer (nm) gate lengths because of severe short channel effects. As an alternative to Si, certain layered semiconductors are attractive for their atomically uniform thickness down to a monolayer, lower dielectric constants, larger band gaps, and heavier carrier effective mass. Here, we demonstrate molybdenum disulfide (MoS2) transistors with a 1-nm physical gate length using a single-walled carbon nanotube as the gate electrode. These ultrashort devices exhibit excellent switching characteristics with near ideal subthreshold swing of ~65 millivolts per decade and an On/Off current ratio of ~106Simulations show an effective channel length of ~3.9 nm in the Off state and ~1 nm in the On state.
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.|Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA.
authors.forename: Sujay B
authors.initials: SB
authors.lastname: Desai
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Surabhi R
authors.initials: SR
authors.lastname: Madhvapathy
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Angada B
authors.initials: AB
authors.lastname: Sachid
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Juan Pablo
authors.initials: JP
authors.lastname: Llinas
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
authors.forename: Qingxiao
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Geun Ho
authors.initials: GH
authors.lastname: Ahn
authors.affiliation: Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
authors.forename: Gregory
authors.initials: G
authors.lastname: Pitner
authors.affiliation: Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, TX 75080, USA.
authors.forename: Moon J
authors.initials: MJ
authors.lastname: Kim
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Jeffrey
authors.initials: J
authors.lastname: Bokor
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA.
authors.forename: Chenming
authors.initials: C
authors.lastname: Hu
authors.affiliation: Electrical Engineering, Stanford University, Stanford, CA 94305, USA.
authors.forename: H-S Philip
authors.initials: HP
authors.lastname: Wong
authors.affiliation: Electrical Engineering and Computer Sciences, University of California, Berkeley, CA 94720, USA. ajavey@eecs.berkeley.edu.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.|Berkeley Sensor and Actuator Center, University of California, Berkeley, CA 94720, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey