title: Photonic-crystal switch divider based on Ge2Sb2Te5thin films.
abstract: A three-port phase-change photonic-crystal switch divider based on Ge2Sb2Te5chalcogenide thin film was proposed. The chalcogenide material used was determined to have a high refractive index and fast phase-change speed by using laser radiation. The structure with a T-junction cavity was used to achieve three switch functions: switching "ON" in only one output port, switching "OFF" in both output ports, and dividing signals into two output ports. The transmission properties of the designed device at 2.0 μm were studied by the finite difference time domain method, which showed that the switch divider can achieve very high switching efficiency by optimizing T-junction cavity parameters. The scaling laws of photonic crystals revealed that the operating wavelength of the designed structure can be easily extended to another wavelength in the midinfrared region.
authors.forename: Beijiao
authors.initials: B
authors.lastname: Ma
authors.forename: Peiqing
authors.initials: P
authors.lastname: Zhang
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.forename: Tengyu
authors.initials: T
authors.lastname: Zhang
authors.forename: Jianghui
authors.initials: J
authors.lastname: Zeng
authors.forename: Qian
authors.initials: Q
authors.lastname: Zhang
authors.forename: Guoxiang
authors.initials: G
authors.lastname: Wang
authors.forename: Peipeng
authors.initials: P
authors.lastname: Xu
authors.forename: Wei
authors.initials: W
authors.lastname: Zhang
authors.forename: Shixun
authors.initials: S
authors.lastname: Dai