title: GeS2-In2S3-CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence.
abstract: Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm3+, Er3+, and Dy3+) doped 65GeS2-25In2S3-10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm3+, Er3+, and Dy3+ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions.
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Legang
authors.initials: L
authors.lastname: Li
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Junyi
authors.initials: J
authors.lastname: Bian
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Jiao
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Zijun
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Shixun
authors.initials: S
authors.lastname: Dai
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo University, Ningbo 315211, China.
authors.forename: Changgui
authors.initials: C
authors.lastname: Lin