title: Large-Area and High-Quality 2D Transition Metal Telluride.
abstract: Large-area and high-quality 2D transition metal tellurides are synthesized by the chemical vapor deposition method. The as-grown WTe2maintains two different stacking sequences in the bilayer, where the atomic structure of the stacking boundary is revealed by scanning transmission electron microscopy. The low-temperature transport measurements reveal a novel semimetal-to-insulator transition in WTe2layers and an enhanced superconductivity in few-layer MoTe2.
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Jiadong
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.|Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.|National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan.
authors.forename: Junhao
authors.initials: J
authors.lastname: Lin
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Xiangwei
authors.initials: X
authors.lastname: Huang
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: Juan
authors.initials: J
authors.lastname: Xia
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Bowei
authors.initials: B
authors.lastname: Zhang
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Hong
authors.initials: H
authors.lastname: Wang
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhu
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Lin
authors.initials: L
authors.lastname: Niu
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Xuewen
authors.initials: X
authors.lastname: Wang
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Wei
authors.initials: W
authors.lastname: Fu
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Peng
authors.initials: P
authors.lastname: Yu
authors.affiliation: Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Tay-Rong
authors.initials: TR
authors.lastname: Chang
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.|Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Chuang-Han
authors.initials: CH
authors.lastname: Hsu
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.|Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.affiliation: Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.|Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan.
authors.forename: Horng-Tay
authors.initials: HT
authors.lastname: Jeng
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.
authors.forename: Yizhong
authors.initials: Y
authors.lastname: Huang
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore, Singapore, 117546, Singapore.|Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Hsin
authors.initials: H
authors.lastname: Lin
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.|Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.|Centre for Disruptive Photonic Technologies, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore.
authors.forename: Zexiang
authors.initials: Z
authors.lastname: Shen
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
authors.forename: Changli
authors.initials: C
authors.lastname: Yang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China.
authors.forename: Li
authors.initials: L
authors.lastname: Lu
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan.
authors.forename: Kazu
authors.initials: K
authors.lastname: Suenaga
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.
authors.forename: Wu
authors.initials: W
authors.lastname: Zhou
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Lab, Oak Ridge, TN, 37831, USA.|Department of Physics and Astronomy, Vanderbilt University, Nashville, TN, 37235, USA.
authors.forename: Sokrates T
authors.initials: ST
authors.lastname: Pantelides
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Guangtong
authors.initials: G
authors.lastname: Liu
authors.affiliation: Centre for Programmable Materials, School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore.|Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical & Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.|CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, 50 Nanyang Drive, Border X Block, Level 6, Singapore, 637553, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
keywords: 2D materials; MoTe2; WTe2; chemical vapor deposition