title: Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing.
abstract: In magnetic logic, four basic Boolean logic operations can be programmed by a magnetic bit at room temperature with a high output ratio (>103%). In the same clock cycle, benefiting from the built-in spin Hall effect, logic results can be directly written into magnetic bits using an all-electric method.
authors.affiliation: Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, China.
authors.forename: Zhaochu
authors.initials: Z
authors.lastname: Luo
authors.affiliation: Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, China.
authors.forename: Ziyao
authors.initials: Z
authors.lastname: Lu
authors.affiliation: Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, China.
authors.forename: Chengyue
authors.initials: C
authors.lastname: Xiong
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100084, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Zhu
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Wu
authors.affiliation: Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 239955, Kingdom of Saudi Arabia.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Huaqiang
authors.initials: H
authors.lastname: Wu
authors.affiliation: Division of Physical Science and Engineering, King Abdullah University of Science and Technology (KAUST), Thuwal, 239955, Kingdom of Saudi Arabia.
authors.forename: Xixiang
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Advanced Materials (MOE) and Beijing National Center for Electron Microscopy, Tsinghua University, Beijing, 100084, China.
authors.forename: Xiaozhong
authors.initials: X
authors.lastname: Zhang
keywords: anomalous Hall effect; magnetic logic; negative differential resistance; nonvolatile memory; spin Hall effect