title: Atomistic switch of giant magnetoresistance and spin thermopower in graphene-like nanoribbons.
abstract: We demonstrate that the giant magnetoresistance can be switched off (on) in even- (odd-) width zigzag graphene-like nanoribbons by an atomistic gate potential or edge disorder inside the domain wall in the antiparallel (ap) magnetic configuration. A strong magneto-thermopower effect is also predicted that the spin thermopower can be greatly enhanced in the ap configuration while the charge thermopower remains low. The results extracted from the tight-binding model agree well with those obtained by first-principles simulations for edge doped graphene nanoribbons. Analytical expressions in the simplest case are obtained to facilitate qualitative analyses in general contexts.
authors.affiliation: Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, 1 Shizi Street, Suzhou 215006, China.|Hongzhiwei Technology Co. Ltd., 1888 Xinjinqiao Road, Pudong, Shanghai 201206, China.
authors.forename: Ming-Xing
authors.initials: MX
authors.lastname: Zhai
authors.affiliation: Jiangsu Key Laboratory of Thin Films, College of Physics, Optoelectronics and Energy, Soochow University, 1 Shizi Street, Suzhou 215006, China.|Key Laboratory of Terahertz Solid-State Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Xue-Feng
authors.initials: XF
authors.lastname: Wang