title: Temperature measurement of Joule heated silicon micro/nanowires using selectively decorated quantum dots.
abstract: We developed a novel method to measure local temperature at micro/nano-scale regions using selective deposition of quantum dots (QDs) as a sensitive temperature probe and measured the temperature of Joule heated silicon microwires (SiMWs) and silicon nanowires (SiNWs) by this method. The QDs are selectively coated only on the surface of the SiMWs and SiNWs by a sequential process composed of selective opening of a polymethyl methacrylate layer via Joule heating, covalent bonding of QDs, and lift-off process. The temperatures of the Joule-heated SiMWs and SiNWs can be measured by characterizing the temperature-dependent shift of photoluminescence peak of the selectively deposited QDs even with far-field optics. The validity of the extracted temperature has been also confirmed by comparing with numerical simulation results. The proposed method can potentially provide micro/nanoscale measurement of localized temperatures for a wide range of electrical and optical devices.
authors.affiliation: Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea. KAIST Institute for the Nanocentury (KINC), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 305-701, Korea.
authors.forename: Jeonghoon
authors.initials: J
authors.lastname: Yun
authors.forename: Jae-Hyuk
authors.initials: JH
authors.lastname: Ahn
authors.forename: Bong Jae
authors.initials: BJ
authors.lastname: Lee
authors.forename: Dong-Il
authors.initials: DI
authors.lastname: Moon
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
authors.forename: Inkyu
authors.initials: I
authors.lastname: Park