title: Bulk molybdenum field emitters by inductively coupled plasma etching.
abstract: In this work we report on the fabrication of inductively coupled plasma (ICP) etched, diode-type, bulk molybdenum field emitter arrays. Emitter etching conditions as a function of etch mask geometry and process conditions were systematically investigated. For optimized uniformity, aspect ratios of >10 were achieved, with 25.5 nm-radius tips realised for masks consisting of aperture arrays some 4.45 μm in diameter and whose field electron emission performance has been herein assessed.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China. j.chen@pku.edu.cn and Electrical Engineering Division, Department of Engineering, University of Cambridge, UK.
authors.forename: Ningli
authors.initials: N
authors.lastname: Zhu
authors.affiliation: Electrical Engineering Division, Department of Engineering, University of Cambridge, UK.
authors.forename: Matthew T
authors.identifier: http://orcid.org/0000-0001-8631-3259
authors.initials: MT
authors.lastname: Cole
authors.affiliation: Electrical Engineering Division, Department of Engineering, University of Cambridge, UK and College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: William I
authors.initials: WI
authors.lastname: Milne
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China. j.chen@pku.edu.cn.
authors.forename: Jing
authors.initials: J
authors.lastname: Chen