title: Investigation of low-resistivity from hydrogenated lightly B-doped diamond by ion implantation.
abstract: We have implanted boron (B) ions (dosage: 5×1014cm-2) into diamond and then hydrogenated the sample by implantating hydrogen ions at room temperature. A p-type diamond material with a low resistivity of 7.37 mΩ cm has been obtained in our experiment, which suggests that the hydrogenation of B-doped diamond results in a low-resistivity p-type material. Interestingly, inverse annealing, in which carrier concentration decreased with increasing annealing temperature, was observed at annealing temperatures above 600 °C. In addition, the formation mechanism of a low-resistivity material has been studied by density functional theory calculation using a plane wave method.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China; Department of Physics, Jining University, Qufu 273155, People's Republic of China.
authors.forename: Cui Xia
authors.initials: CX
authors.lastname: Yan
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Dai
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Meng
authors.initials: M
authors.lastname: Guo
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Lin
authors.initials: L
authors.lastname: Yu
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Dong Hong
authors.initials: DH
authors.lastname: Liu
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, People's Republic of China.
authors.forename: Bai Biao
authors.initials: BB
authors.lastname: Huang
authors.affiliation: Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China.
authors.forename: Rui Qin
authors.initials: RQ
authors.lastname: Zhang
authors.affiliation: Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China.
authors.forename: Wen Jun
authors.initials: WJ
authors.lastname: Zhang
authors.affiliation: Center of Super-Diamond and Advanced Films (COSDAF) and Department of Physics and Materials Science, City University of Hong Kong, Hong Kong, China.
authors.forename: Igor
authors.initials: I
authors.lastname: Bello
keywords: diamond; hydrogenation; low resistivity; plane wave method