title: High-mobility solution-processed copper phthalocyanine-based organic field-effect transistors.
abstract: Solution-processed films of 1,4,8,11,15,18,22,25-octakis(hexyl) copper phthalocyanine (CuPc6) were utilized as an active semiconducting layer in the fabrication of organic field-effect transistors (OFETs) in the bottom-gate configurations using chemical vapour deposited silicon dioxide (SiO2) as gate dielectrics. The surface treatment of the gate dielectric with a self-assembled monolayer of octadecyltrichlorosilane (OTS) resulted in values of 4×10-2cm2V-1s-1and 106for saturation mobility and on/off current ratio, respectively. This improvement was accompanied by a shift in the threshold voltage from 3 V for untreated devices to -2 V for OTS treated devices. The trap density at the interface between the gate dielectric and semiconductor decreased by about one order of magnitude after the surface treatment. The transistors with the OTS treated gate dielectrics were more stable over a 30-day period in air than untreated ones.
authors.affiliation: Department of Physics, University of Pune, Ganeshkhind, Pune 411007, India.
authors.forename: Nandu B
authors.initials: NB
authors.lastname: Chaure
authors.affiliation: School of Chemistry, University of East Anglia, Norwich, NR4 7TJ, UK.
authors.forename: Andrew N
authors.initials: AN
authors.lastname: Cammidge
authors.affiliation: School of Chemistry, University of East Anglia, Norwich, NR4 7TJ, UK.
authors.forename: Isabelle
authors.initials: I
authors.lastname: Chambrier
authors.affiliation: School of Chemistry, University of East Anglia, Norwich, NR4 7TJ, UK.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Cook
authors.affiliation: National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, UK.
authors.forename: Markys G
authors.initials: MG
authors.lastname: Cain
authors.affiliation: National Physical Laboratory, Hampton Road, Teddington, Middlesex TW11 0LW, UK.
authors.forename: Craig E
authors.initials: CE
authors.lastname: Murphy
authors.affiliation: The Wolfson Centre for Materials Processing, Brunel University, Uxbridge, Middlesex UB8 3PH, UK.
authors.forename: Chandana
authors.initials: C
authors.lastname: Pal
authors.affiliation: The Wolfson Centre for Materials Processing, Brunel University, Uxbridge, Middlesex UB8 3PH, UK.
authors.forename: Asim K
authors.initials: AK
authors.lastname: Ray
keywords: AFM; field effect mobility; organic thin film transistor; substituted copper phthalocyanine; surface treatment; topology