title: Progress in the materials science of silicene.
abstract: In its freestanding, yet hypothetical form, the Si counterpart of graphene called silicene is predicted to possess massless Dirac fermions and to exhibit an experimentally accessible quantum spin Hall effect. Such interesting electronic properties are not realized in two-dimensional (2D) Si honeycomb lattices prepared recently on metallic substrates where the crystal and hybrid electronic structures of these 'epitaxial silicene' phases are strongly influenced by the substrate, and thus different from those predicted for isolated 2D structures. While the realization of such low-dimensional Siπmaterials has hardly been imagined previously, it is evident that the materials science behind silicene remains challenging. In this contribution, we will review our recent results that lead to an enhanced understanding of epitaxial silicene formed on diboride thin films, and discuss the remaining challenges that must be addressed in order to turn Si 2D nanostructures into technologically interesting nanoelectronic materials.
authors.affiliation: School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan.
authors.forename: Yukiko
authors.initials: Y
authors.lastname: Yamada-Takamura
authors.affiliation: School of Materials Science, Japan Advanced Institute of Science and Technology (JAIST), 1-1, Asahidai, Nomi, Ishikawa 923-1292, Japan.
authors.forename: Rainer
authors.initials: R
authors.lastname: Friedlein
keywords: nanoelectronics; silicene; silicon; two-dimensional materials