title: Structural analysis of anodic porous alumina used for resistive random access memory.
abstract: Anodic porous alumina with duplex layers exhibits a voltage-induced switching effect and is a promising candidate for resistive random access memory. The nanostructural analysis of porous alumina is important for understanding the switching effect. We investigated the difference between the two layers of an anodic porous alumina film using transmission electron microscopy and electron energy-loss spectroscopy. Diffraction patterns showed that both layers are amorphous, and the electron energy-loss spectroscopy indicated that the inner layer contains less oxygen than the outer layer. We speculate that the conduction paths are mostly located in the oxygen-depleted area.
authors.affiliation: National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Jeungwoo
authors.initials: J
authors.lastname: Lee
authors.affiliation: National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Seisuke
authors.initials: S
authors.lastname: Nigo
authors.affiliation: GIT Japan Inc., 2-3-3, Shin-Yokohama, Kohoku-Ku, Yokohama 222-0033, Japan.
authors.forename: Yoshihiro
authors.initials: Y
authors.lastname: Nakano
authors.affiliation: National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Seiichi
authors.initials: S
authors.lastname: Kato
authors.affiliation: National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Hideaki
authors.initials: H
authors.lastname: Kitazawa
authors.affiliation: National Institute for Materials Science, 1-2-1, Sengen, Tsukuba, Ibaraki 305-0047, Japan.
authors.forename: Giyuu
authors.initials: G
authors.lastname: Kido
keywords: ReRAM; nanostructure; porous alumina