title: Electrical Switching in Semiconductor-Metal Self-Assembled VO2Disordered Metamaterial Coatings.
abstract: As a strongly correlated metal oxide, VO2inspires several highly technological applications. The challenging reliable wafer-scale synthesis of high quality polycrystalline VO2coatings is demonstrated on 4" Si taking advantage of the oxidative sintering of chemically vapor deposited VO2films. This approach results in films with a semiconductor-metal transition (SMT) quality approaching that of the epitaxial counterpart. SMT occurs with an abrupt electrical resistivity change exceeding three orders of magnitude with a narrow hysteresis width. Spatially resolved infrared and Raman analyses evidence the self-assembly of VO2disordered metamaterial, compresing monoclinic (M1 and M2) and rutile (R) domains, at the transition temperature region. The M2 mediation of the M1-R transition is spatially confined and related to the localized strain-stabilization of the M2 phase. The presence of the M2 phase is supposed to play a role as a minor semiconducting phase far above the SMT temperature. In terms of application, we show that the VO2disordered self-assembly of M and R phases is highly stable and can be thermally triggered with high precision using short heating or cooling pulses with adjusted strengths. Such a control enables an accurate and tunable thermal control of the electrical switching.
authors.affiliation: Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux L-4362 Esch-sur-Alzette Luxembourg.
authors.forename: Sunil
authors.initials: S
authors.lastname: Kumar
authors.affiliation: CIRIMAT, ENSIACET-4 allée E. Monso, 31030 Toulouse, France.
authors.forename: Francis
authors.initials: F
authors.lastname: Maury
authors.affiliation: Luxembourg Institute of Science and Technology (LIST), 5 avenue des Hauts-Fourneaux L-4362 Esch-sur-Alzette Luxembourg.
authors.forename: Naoufal
authors.initials: N
authors.lastname: Bahlawane