title: Organic-inorganic perovskite plasmonic nanowire lasers with a low threshold and a good thermal stability.
abstract: Plasmonic nanolasers have ushered in a paradigm of deep sub-wavelength coherent optical sources with ultrafast dynamics that exploit the strong confinement capabilities of metals. Although these devices are usually associated with higher thresholds due to absorption in metals, the high gain inorganic II-VI and III-V semiconductor materials have allowed the realization of plasmonic nanolasers operating under ambient conditions. In this work, we introduce single-crystalline lead halide perovskite (CH3NH3PbI3) nanowires as an organic-inorganic semiconducting gain material to the plasmonic laser community. We demonstrate plasmonic laser action using a hybrid geometry whereby the perovskite nanowires are placed on a silver substrate with an insulating spacer layer. We report relatively low threshold operation under ambient conditions (13.5 μJ cm-2), and the devices work well even at temperatures up to 43.6 °C. The demonstration highlights the high optical gain achievable in perovskite materials and thus provides a solution to high gain materials for plasmonic devices.
authors.affiliation: Research Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn and The Blackett Laboratory, Imperial College London, London SW7 2AZ, UK. r.oulton@imperial.ac.uk.
authors.forename: Haichao
authors.initials: H
authors.lastname: Yu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. qsc@semi.ac.cn.
authors.forename: Kuankuan
authors.initials: K
authors.lastname: Ren
authors.affiliation: The MOE Key Laboratory of Weak Light Nonlinear Photonics, Nankai University, Tianjin 300457, China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Wu
authors.affiliation: Research Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn.
authors.forename: Jian
authors.initials: J
authors.lastname: Wang
authors.affiliation: Research Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn.
authors.forename: Jie
authors.initials: J
authors.lastname: Lin
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. qsc@semi.ac.cn.
authors.forename: Zhijie
authors.initials: Z
authors.lastname: Wang
authors.affiliation: The MOE Key Laboratory of Weak Light Nonlinear Photonics, Nankai University, Tianjin 300457, China.
authors.forename: Jingjun
authors.initials: J
authors.lastname: Xu
authors.affiliation: The Blackett Laboratory, Imperial College London, London SW7 2AZ, UK. r.oulton@imperial.ac.uk.
authors.forename: Rupert F
authors.initials: RF
authors.lastname: Oulton
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China. qsc@semi.ac.cn.
authors.forename: Shengchun
authors.initials: S
authors.lastname: Qu
authors.affiliation: Research Center of Ultra-Precision Optoelectronic Instrument, Harbin Institute of Technology, Harbin 150080, China. p.jin@hit.edu.cn.
authors.forename: Peng
authors.initials: P
authors.lastname: Jin