title: Silicon deposition in nanopores using a liquid precursor.
abstract: Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.
authors.affiliation: School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Masuda
authors.affiliation: Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.
authors.forename: Narihito
authors.initials: N
authors.lastname: Tatsuda
authors.affiliation: Toyota Central R&D Labs. Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan.
authors.forename: Kazuhisa
authors.initials: K
authors.lastname: Yano
authors.affiliation: School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292, Japan.
authors.forename: Tatsuya
authors.initials: T
authors.lastname: Shimoda