title: Observation of Quantum Size Effect from Silicon Nanowall.
abstract: We developed a fabrication technique of very thin silicon nanowall structures. The minimum width of the fabricated silicon nanowall structures was about 3 nm. This thinnest region of the silicon nanowall structures was investigated by using cathode luminescence and ultraviolet photoelectron spectroscopy (UPS). The UPS measurements revealed that the density of states (DOS) of the thinnest region showed a stepwise shape which is completely different from that of the bulk Si. Theoretical analysis clearly demonstrated that this change of the DOS shape was due to the quantum size effect.
authors.affiliation: Panasonic Corporation, Kadoma, Osaka, 571-8686, Japan. kanematsu.daiji@jp.panasonic.com.|Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan. kanematsu.daiji@jp.panasonic.com.
authors.forename: Daiji
authors.initials: D
authors.lastname: Kanematsu
authors.affiliation: Japan Science and Technology Agency, Koriyama, Fukushima, 963-0298, Japan.
authors.forename: Shuhei
authors.initials: S
authors.lastname: Yoshiba
authors.affiliation: Japan Science and Technology Agency, Koriyama, Fukushima, 963-0298, Japan.
authors.forename: Masakazu
authors.initials: M
authors.lastname: Hirai
authors.affiliation: Panasonic Corporation, Kadoma, Osaka, 571-8686, Japan.
authors.forename: Akira
authors.initials: A
authors.lastname: Terakawa
authors.affiliation: Panasonic Corporation, Kadoma, Osaka, 571-8686, Japan.
authors.forename: Makoto
authors.initials: M
authors.lastname: Tanaka
authors.affiliation: Japan Science and Technology Agency, Koriyama, Fukushima, 963-0298, Japan.
authors.forename: Yukimi
authors.initials: Y
authors.lastname: Ichikawa
authors.affiliation: Tokyo Institute of Technology, Meguro, Tokyo, 152-8552, Japan.
authors.forename: Shinsuke
authors.initials: S
authors.lastname: Miyajima
authors.affiliation: Tokyo City University, Setagaya, Tokyo, 158-0082, Japan.
authors.forename: Makoto
authors.initials: M
authors.lastname: Konagai
keywords: Cathode luminescence; Quantum size effect; Silicon nanowall; Ultraviolet photoelectron spectroscopy