title: High-rate and wide-area deposition of epitaxial Si films by mesoplasma chemical vapor deposition.
abstract: Homoepitaxial Si films have been deposited at a high rate of 200 nm s-1over a wide area of 20 mm × 80 mm by cluster-assisted mesoplasma chemical vapor deposition (MPCVD) on a moving substrate. The obtained epitaxial Si films exhibited a uniform roughness of 0.1-0.3 nm (1 × 1μm2) and a Hall mobility of ∼240 cm2V-1s-1. The results suggested that under the MPCVD the deposition precursors formed at the plasma edge could be small enough not to influence either epitaxial film structure or the film quality provided the substrate temperature is maintained above 500 °C.
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Sudong
authors.initials: S
authors.lastname: Wu
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Kento
authors.initials: K
authors.lastname: Sawada
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Tomonori
authors.initials: T
authors.lastname: Ichimaru
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Takanori
authors.initials: T
authors.lastname: Yamamoto
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Makoto
authors.initials: M
authors.lastname: Kambara
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo, Tokyo 113-8656, Japan.
authors.forename: Toyonobu
authors.initials: T
authors.lastname: Yoshida
keywords: high rate Si epitaxy; large area deposition; mesoplasma chemical vapor decomposition