title: Detecting 100 fW cm-2Light with Trapped Electron Gated Organic Phototransistors.
abstract: Ultraweak light detection with solid-state and cooling-free photodetectors is important for both fundamental research and practical applications. A general phototransistor architecture for detecting ultraviolet-visible light down to 100 fW cm-2at room temperature is demonstrated. The exceptional sensitivity stems from an amplification process triggered by incident light. A responsivity of ≈107A W-1is achieved.
authors.affiliation: Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA.
authors.forename: Yongbo
authors.initials: Y
authors.lastname: Yuan
authors.affiliation: Department of Mechanical and Materials Engineering, University of Nebraska-Lincoln, Lincoln, NE, 68588-0656, USA.
authors.forename: Jinsong
authors.initials: J
authors.lastname: Huang
keywords: electron injection; floating gate; organic phototransistor; ultraweak light detection; voltage responsivity