title: A review of molecular beam epitaxy of ferroelectric BaTiO3films on Si, Ge and GaAs substrates and their applications.
abstract: SrTiO3epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.
authors.affiliation: Institut des Nanotechnologies de Lyon, CNRS, Ecole Centrale de Lyon, Université de Lyon, 69134 Ecully, France.
authors.forename: Lucie
authors.initials: L
authors.lastname: Mazet
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.affiliation: Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
authors.forename: Sergei V
authors.initials: SV
authors.lastname: Kalinin
authors.affiliation: CEMES-CNRS, Université de Toulouse, 29 rue Jeanne Marvig, F-31055 Toulouse, France.
authors.forename: Sylvie
authors.initials: S
authors.lastname: Schamm-Chardon
authors.affiliation: Institut des Nanotechnologies de Lyon, CNRS, Ecole Centrale de Lyon, Université de Lyon, 69134 Ecully, France.
authors.forename: Catherine
authors.initials: C
authors.lastname: Dubourdieu
keywords: ferroelectric; molecular beam epitaxy; semiconductor