title: Growth and applications of GeSn-related group-IV semiconductor materials.
abstract: We review the technology of Ge1-xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1-xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1-xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1-xSnx, and insulators/Ge1-xSnxinterfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1-xSnx-related materials, as well as the reported performances of electronic devices using Ge1-xSnxrelated materials.
authors.affiliation: EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
authors.forename: Shigeaki
authors.initials: S
authors.lastname: Zaima
authors.affiliation: Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
authors.forename: Osamu
authors.initials: O
authors.lastname: Nakatsuka
authors.affiliation: Innovations for High Performance Microelectronics (IHP), Im Technologiepark 25, D-15236 Frankfurt (Oder), Germany.
authors.forename: Noriyuki
authors.initials: N
authors.lastname: Taoka
authors.affiliation: EcoTopia Science Institute, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan; Institute for Advanced Research, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8601, Japan.
authors.forename: Masashi
authors.initials: M
authors.lastname: Kurosawa
authors.affiliation: Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
authors.forename: Wakana
authors.initials: W
authors.lastname: Takeuchi
authors.affiliation: Department of Crystalline Materials Science, Graduate School of Engineering, Nagoya University, Furo-cho, Chikusa-ku, Nagoya 464-8603, Japan.
authors.forename: Mitsuo
authors.initials: M
authors.lastname: Sakashita
keywords: crystal growth; energy band engineering; epitaxy; germanium tin; group-IV semiconductor; interface; thin film