title: Superconductivity in carrier-doped silicon carbide.
abstract: We report growth and characterization of heavily boron-doped 3C-SiC and 6H-SiC and Al-doped 3C-SiC. Both 3C-SiC:B and 6H-SiC:B reveal type-I superconductivity with a critical temperatureTc=1.5 K. On the other hand, Al-doped 3C-SiC (3C-SiC:Al) shows type-II superconductivity withTc=1.4 K. Both SiC:Al and SiC:B exhibit zero resistivity and diamagnetic susceptibility belowTcwith effective hole-carrier concentrationnhigher than 1020cm-3. We interpret the different superconducting behavior in carrier-dopedp-type semiconductors SiC:Al, SiC:B, Si:B and C:B in terms of the different ionization energies of their acceptors.
authors.affiliation: Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan.
authors.forename: Takahiro
authors.initials: T
authors.lastname: Muranaka
authors.affiliation: Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan.
authors.forename: Yoshitake
authors.initials: Y
authors.lastname: Kikuchi
authors.affiliation: Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan.
authors.forename: Taku
authors.initials: T
authors.lastname: Yoshizawa
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki, 305-8578, Japan.
authors.forename: Naoki
authors.initials: N
authors.lastname: Shirakawa
authors.affiliation: Department of Physics and Mathematics, Aoyama-Gakuin University, 5-10-1 Fuchinobe, Sagamihara, Kanagawa 229-8558, Japan.
authors.forename: Jun
authors.initials: J
authors.lastname: Akimitsu
keywords: Al-doped SiC; boron-doped SiC; hexagonal and cubic SiC; type-I superconductor; type-II superconductor