title: CMOS Humidity Sensor System Using Carbon Nitride Film as Sensing Materials.
abstract: An integrated humidity sensor system with nano-structured carbon nitride film as humidity sensing material is fabricated by a 0.8 μm analog mixed CMOS process. The integrated sensor system consists of differential humidity sensitive field effect transistors (HUSFET), temperature sensor, and operational amplifier. The process contains two poly, two metal and twin well technology. To form CNxfilm on Si₃N₄/Si substrate, plasma etching is performed to the gate area as well as trenches. CNxfilm is deposited by reactive RF magnetron sputtering method and patterned by the lift-off technique. The drain current is proportional to the dielectric constant, and the sensitivity is 2.8 ㎂/%RH.
authors.affiliation: Department of Electronic Engineering, Kyungnam University, Masan, Kyungnam 631-701, Korea. sensors@kyungnam.ac.kr.
authors.forename: Sung Pil
authors.initials: SP
authors.lastname: Lee
authors.affiliation: Electrical Engineering and Computer Science, Case Western Reserve University, Cleveland, Ohio 44106, USA.
authors.forename: Ji Gong
authors.initials: JG
authors.lastname: Lee
authors.affiliation: Intel Corporation, Hillsboro, OR 97124, USA.
authors.forename: Shaestagir
authors.initials: S
authors.lastname: Chowdhury
keywords: CMOS; Carbon nitride film; Humidity; Integrated sensors