title: Colloidal silicon quantum dots: synthesis and luminescence tuning from the near-UV to the near-IR range.
abstract: This review describes a series of representative synthesis processes, which have been developed in the last two decades to prepare silicon quantum dots (QDs). The methods include both top-down and bottom-up approaches, and their methodological advantages and disadvantages are presented. Considerable efforts in surface functionalization of QDs have categorized it into (i) a two-step process and (ii)in situsurface derivatization. Photophysical properties of QDs are summarized to highlight the continuous tuning of photoluminescence color from the near-UV through visible to the near-IR range. The emission features strongly depend on the silicon nanostructures including QD surface configurations. Possible mechanisms of photoluminescence have been summarized to ascertain the future challenges toward industrial use of silicon-based light emitters.
authors.affiliation: International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, 305-0044, Japan.
authors.forename: Batu
authors.initials: B
authors.lastname: Ghosh
authors.affiliation: International Center for Materials Nanoarchitectonics (WPI-MANA), 1-1 Namiki, Tsukuba, 305-0044, Japan; National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, 305-0047, Japan; PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama, 332-0012, Japan.
authors.forename: Naoto
authors.initials: N
authors.lastname: Shirahata
keywords: Nanocrystals; Photoluminescence; Quantum dots; Quantum size effect; Silicon; Surface chemistry