title: Dirac fermions induced in strained zigzag phosphorus nanotubes and their applications in field effect transistors.
abstract: In this work, Dirac fermions have been obtained and engineered in one-dimensional (1D) zigzag phosphorus nanotubes (ZPNTs). We have performed a comprehensive first-principles computational study of the electronic properties of ZPNTs with various diameters. The results indicate that as the lattice parameter (Lc) along the axial direction increases, ZPNTs undergo transitions from metal to semimetal and semimetal to semiconductor, whereas Dirac fermions appear at Lcranging from 3.90 Å to 4.10 Å. In particular, a field effect transistor (FET) based on 12-ZPNT (with 12 unit cells in the transverse direction) exhibits semiconductor behaviors with efficient gate-effect modulation at Lc= 4.60 Å. However, only weak gate modulation is demonstrated when the nanotube becomes a semimetal at Lc= 4.10 Å. This study indicates that ZPNTs are profoundly appealing for applications in strain sensors. Our findings pave the way for the development of high-performance strain-engineered electronics based on Dirac fermions in 1D materials.
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
authors.forename: Sheng
authors.initials: S
authors.lastname: Yu
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu and State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhu
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
authors.forename: Kwesi
authors.initials: K
authors.lastname: Eshun
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
authors.forename: Chen
authors.initials: C
authors.lastname: Shi
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu and Institute for Advanced Materials, South China Normal University, Guangzhou 510006, China.
authors.forename: Min
authors.initials: M
authors.lastname: Zeng
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
authors.forename: Kai
authors.initials: K
authors.lastname: Jiang
authors.affiliation: Department of Electrical and Computer Engineering, George Mason University, Fairfax, VA 22030, USA. syu12@gmu.edu.
authors.forename: Qiliang
authors.initials: Q
authors.lastname: Li