title: Screening of metal flux for SiC solution growth by a thin-film combinatorial method.
abstract: 4H-SiC is a wide-bandgap semiconductor with potential applications in power devices. The lack of a liquid phase in SiC hinders conventional crystal growth from the melt; consequently, SiC wafers still have low quality and are nearly 100 times more expensive than Si wafers. To take advantage of the solution growth for improving the quality and reducing the cost of SiC, Ni addition to Si-Ti flux has been investigated. A combinatorial approach was employed to accelerate the screening of metal flux for the SiC solution growth.
authors.affiliation: Corporate R&D Headquarters, Fuji Electric Co., Ltd, 1, Fuji-machi, Hino-city, Tokyo, 191-8502, Japan.
authors.forename: Yoshiyuki
authors.initials: Y
authors.lastname: Yonezawa
authors.affiliation: Corporate R&D Headquarters, Fuji Electric Co., Ltd, 1, Fuji-machi, Hino-city, Tokyo, 191-8502, Japan.
authors.forename: Mina
authors.initials: M
authors.lastname: Ryo
authors.affiliation: Corporate R&D Headquarters, Fuji Electric Co., Ltd, 1, Fuji-machi, Hino-city, Tokyo, 191-8502, Japan.
authors.forename: Aki
authors.initials: A
authors.lastname: Takigawa
authors.affiliation: Materials and Structures Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, 226-8503, Japan.
authors.forename: Yuji
authors.initials: Y
authors.lastname: Matsumoto
keywords: SiC; combinatorial; flux materials; solution growth