title: Simple and cost-effective fabrication of size-tunable zinc oxide architectures by multiple size reduction technique.
abstract: We present a simple size reduction technique for fabricating 400 nm zinc oxide (ZnO) architectures using a silicon master containing only microscale architectures. In this approach, the overall fabrication, from the master to the molds and the final ZnO architectures, features cost-effective UV photolithography, instead of electron beam lithography or deep-UV photolithography. A photosensitive Zn-containing sol-gel precursor was used to imprint architectures by direct UV-assisted nanoimprint lithography (UV-NIL). The resulting Zn-containing architectures were then converted to ZnO architectures with reduced feature sizes by thermal annealing at 400 °C for 1 h. The imprinted and annealed ZnO architectures were also used as new masters for the size reduction technique. ZnO pillars of 400 nm diameter were obtained from a silicon master with pillars of 1000 nm diameter by simply repeating the size reduction technique. The photosensitivity and contrast of the Zn-containing precursor were measured as 6.5 J cm-2and 16.5, respectively. Interesting complex ZnO patterns, with both microscale pillars and nanoscale holes, were demonstrated by the combination of dose-controlled UV exposure and a two-step UV-NIL.
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Hyeong-Ho
authors.initials: HH
authors.lastname: Park
authors.affiliation: 4D Labs and Department of Chemistry, Simon Fraser University, Burnaby, BC V5A 1S6, Canada.
authors.forename: Xin
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Seon-Yong
authors.initials: SY
authors.lastname: Hwang
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Sang Hyun
authors.initials: SH
authors.lastname: Jung
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Semin
authors.initials: S
authors.lastname: Kang
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Hyun-Beom
authors.initials: HB
authors.lastname: Shin
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Ho Kwan
authors.initials: HK
authors.lastname: Kang
authors.affiliation: Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Republic of Korea.
authors.forename: Hyung-Ho
authors.initials: HH
authors.lastname: Park
authors.affiliation: 4D Labs and Department of Chemistry, Simon Fraser University, Burnaby, BC V5A 1S6, Canada.
authors.forename: Ross H
authors.initials: RH
authors.lastname: Hill
authors.affiliation: Patterning Process Department, Nano Process Division, Korea Advanced Nano Fab Center (KANC), Suwon, 443-270, Republic of Korea.
authors.forename: Chul Ki
authors.initials: CK
authors.lastname: Ko
keywords: Complex patterns; Nanoimprint lithography; Size reduction technique; Zinc oxide