title: Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors.
abstract: We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 μW) and energy (<200 fJ per bit per μm2), low read-power (∼nW), and high endurance (>millions of cycles). To understand their physico-chemical operating mechanisms, we performed in operando synchrotron X-ray transmission nanoscale spectromicroscopy using an ultra-sensitive time-multiplexed technique. We observed only spatially uniform material changes during cell operation, in sharp contrast to the frequently detected formation of a localized conduction channel in transition-metal-oxide memristors. We also associated the response of assigned spectral features distinctly to non-volatile storage (resistance change) and writing of information (application of voltage and Joule heating). These results provide critical insights into high-performance memristors that will aid in device design, scaling and predictive circuit-modeling, all of which are essential for the widespread deployment of successful memristor applications.
authors.affiliation: Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA. suhas.kumar@hpe.com stan.williams@hpe.com.
authors.forename: Suhas
authors.initials: S
authors.lastname: Kumar
authors.affiliation: Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA. suhas.kumar@hpe.com stan.williams@hpe.com.
authors.forename: Noraica
authors.initials: N
authors.lastname: Davila
authors.affiliation: Stanford University, Stanford, CA 94305, USA.
authors.forename: Ziwen
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA. suhas.kumar@hpe.com stan.williams@hpe.com.
authors.forename: Xiaopeng
authors.initials: X
authors.lastname: Huang
authors.affiliation: Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA. suhas.kumar@hpe.com stan.williams@hpe.com.
authors.forename: John Paul
authors.initials: JP
authors.lastname: Strachan
authors.affiliation: Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: David
authors.initials: D
authors.lastname: Vine
authors.affiliation: Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: A L
authors.identifier: http://orcid.org/0000-0002-8805-8690
authors.initials: AL
authors.lastname: David Kilcoyne
authors.affiliation: Stanford University, Stanford, CA 94305, USA.
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Nishi
authors.affiliation: Hewlett Packard Labs, 1501 Page Mill Rd, Palo Alto, CA 94304, USA. suhas.kumar@hpe.com stan.williams@hpe.com.
authors.forename: R
authors.initials: R
authors.lastname: Stanley Williams