title: Wurtzite-derived ternary I-III-O2semiconductors.
abstract: Ternary zincblende-derived I-III-VI2chalcogenide and II-IV-V2pnictide semiconductors have been widely studied and some have been put to practical use. In contrast to the extensive research on these semiconductors, previous studies into ternary I-III-O2oxide semiconductors with a wurtzite-derivedβ-NaFeO2structure are limited. Wurtzite-derivedβ-LiGaO2andβ-AgGaO2form alloys with ZnO and the band gap of ZnO can be controlled to include the visible and ultraviolet regions.β-CuGaO2, which has a direct band gap of 1.47 eV, has been proposed for use as a light absorber in thin film solar cells. These ternary oxides may thus allow new applications for oxide semiconductors. However, information about wurtzite-derived ternary I-III-O2semiconductors is still limited. In this paper we review previous studies onβ-LiGaO2,β-AgGaO2andβ-CuGaO2to determine guiding principles for the development of wurtzite-derived I-III-O2semiconductors.
authors.affiliation: Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
authors.forename: Takahisa
authors.initials: T
authors.lastname: Omata
authors.affiliation: Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
authors.forename: Hiraku
authors.initials: H
authors.lastname: Nagatani
authors.affiliation: Division of Materials and Manufacturing Science, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan.
authors.forename: Issei
authors.initials: I
authors.lastname: Suzuki
authors.affiliation: Department of Mechanical Engineering, Toyama National College of Technology, 13 Hongo-machi, Toyama 939-8630, Japan.
authors.forename: Masao
authors.initials: M
authors.lastname: Kita
keywords: 72.80.Ey; 78.40.Fy; 81.05.Dz; II–VI semiconductor; I–III–VI2 semiconductor; oxide semiconductor