title: Dynamic probe of ZnTe(110) surface by scanning tunneling microscopy.
abstract: The reconstructed surface structure of the II-VI semiconductor ZnTe (110), which is a promising material in the research field of semiconductor spintronics, was studied by scanning tunneling microscopy/spectroscopy (STM/STS). First, the surface states formed by reconstruction by the charge transfer of dangling bond electrons from cationic Zn to anionic Te atoms, which are similar to those of IV and III-V semiconductors, were confirmed in real space. Secondly, oscillation in tunneling current between binary states, which is considered to reflect a conformational change in the topmost Zn-Te structure between the reconstructed and bulk-like ideal structures, was directly observed by STM. Third, using the technique of charge injection, a surface atomic structure was successfully fabricated, suggesting the possibility of atomic-scale manipulation of this widely applicable surface of ZnTe.
authors.affiliation: Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
authors.forename: Ken
authors.initials: K
authors.lastname: Kanazawa
authors.affiliation: Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
authors.forename: Shoji
authors.initials: S
authors.lastname: Yoshida
authors.affiliation: Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
authors.forename: Hidemi
authors.initials: H
authors.lastname: Shigekawa
authors.affiliation: Faculty of Pure and Applied Sciences, University of Tsukuba, Tsukuba 305-8573, Japan.
authors.forename: Shinji
authors.initials: S
authors.lastname: Kuroda
keywords: ZnTe; atom manipulation; scanning tunneling microscopy; semiconductor surface