title: Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices.
abstract: Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been developed by applying direct current and alternating current simultaneously to the Ge-based Schottky devices, where the rectification magnetoresistance could be remarkably tuned in a wide range. Moreover, the interface and bulk contribution to the magnetotransport properties has been effectively separated based on the rectification magnetoresistance effect. The state-of-the-art electrical manipulation technique could be adapt to other similar heterojunctions, where fascinating rectification magnetoresistance is worthy of expectation.
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
authors.forename: Qi-Kun
authors.initials: QK
authors.lastname: Huang
authors.affiliation: Electrical &Computer Engineering, Harold Frank Hall, Room 4155, University of California, Santa Barbara, CA 93106-9560, USA.
authors.forename: Yi
authors.initials: Y
authors.lastname: Yan
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
authors.forename: Kun
authors.initials: K
authors.lastname: Zhang
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
authors.forename: Huan-Huan
authors.initials: HH
authors.lastname: Li
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
authors.forename: Shishou
authors.initials: S
authors.lastname: Kang
authors.affiliation: School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
authors.forename: Yu-Feng
authors.initials: YF
authors.lastname: Tian