title: Room temperature nanostructured graphene transistor with high on/off ratio.
abstract: We report the batch fabrication of graphene field-effect-transistors (GFETs) with nanoperforated graphene as channel. The transistors were cut and encapsulated. The encapsulated GFETs display saturation regions that can be tuned by modifying the top gate voltage, and have on/off ratios of at least 2 × 103at room temperature and at small drain and gate voltages. In addition, the nanoperforated GFETs display orders of magnitude higher photoresponses than any room-temperature graphene detector configurations that do not involve heterostructures with bandgap materials.
authors.affiliation: National Institute for Research and Development in Microtechnology (IMT), PO Box 38-160, 023573 Bucharest, Romania.
authors.forename: Mircea
authors.initials: M
authors.lastname: Dragoman
authors.forename: Adrian
authors.initials: A
authors.lastname: Dinescu
authors.forename: Daniela
authors.initials: D
authors.lastname: Dragoman