title: Fabrication and characteristics of porous germanium films.
abstract: Porous germanium films with good adhesion to the substrate were produced by annealing GeO2ceramic films in H2atmosphere. The reduction of GeO2started at the top of a film and resulted in a Ge layer with a highly porous surface. TEM and Raman measurements reveal small Ge crystallites at the top layer and a higher degree of crystallinity at the bottom part of the Ge film; visible photoluminescence was detected from the small crystallites. Porous Ge films exhibit high density of holes (1020cm-3) and a maximum of Hall mobility at ∼225 K. Their p-type conductivity is dominated by the defect scattering mechanism.
authors.affiliation: College of Materials Science and Technology, Qingdao University of Science and Technology, 53 Zheng-zhou Road, Qingdao 266042, People's Republic of China; National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Chengbin
authors.initials: C
authors.lastname: Jing
authors.affiliation: College of Materials Science and Technology, Qingdao University of Science and Technology, 53 Zheng-zhou Road, Qingdao 266042, People's Republic of China.
authors.forename: Chuanjian
authors.initials: C
authors.lastname: Zhang
authors.affiliation: College of Materials Science and Technology, Qingdao University of Science and Technology, 53 Zheng-zhou Road, Qingdao 266042, People's Republic of China.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Zang
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Wenzheng
authors.initials: W
authors.lastname: Zhou
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Wei
authors.initials: W
authors.lastname: Bai
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Tie
authors.initials: T
authors.lastname: Lin
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, People's Republic of China.
authors.forename: Junhao
authors.initials: J
authors.lastname: Chu
keywords: germanium; porous structured film; semiconducting behavior; visible photoluminescence