title: High-performance silicon photonics technology for telecommunications applications.
abstract: By way of a brief review of Si photonics technology, we show that significant improvements in device performance are necessary for practical telecommunications applications. In order to improve device performance in Si photonics, we have developed a Si-Ge-silica monolithic integration platform, on which compact Si-Ge-based modulators/detectors and silica-based high-performance wavelength filters are monolithically integrated. The platform features low-temperature silica film deposition, which cannot damage Si-Ge-based active devices. Using this platform, we have developed various integrated photonic devices for broadband telecommunications applications.
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Koji
authors.initials: K
authors.lastname: Yamada
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Tai
authors.initials: T
authors.lastname: Tsuchizawa
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Hidetaka
authors.initials: H
authors.lastname: Nishi
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Rai
authors.initials: R
authors.lastname: Kou
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Tatsurou
authors.initials: T
authors.lastname: Hiraki
authors.affiliation: Nanophotonics Center, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan; Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Kotaro
authors.initials: K
authors.lastname: Takeda
authors.affiliation: Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Fukuda
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Yasuhiko
authors.initials: Y
authors.lastname: Ishikawa
authors.affiliation: Department of Materials Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo, 113-8656, Japan.
authors.forename: Kazumi
authors.initials: K
authors.lastname: Wada
authors.affiliation: Microsystem Integration Laboratories, NTT Corporation 3-1, Morinosato-Wakamiya, Atsugi, Kanagawa, 243-0198, Japan.
authors.forename: Tsuyoshi
authors.initials: T
authors.lastname: Yamamoto
keywords: Germanium; Optical interconnection; Photonics; Silica; Silicon; Telecommunications