title: Gate bias-dependent junction characteristics of silicon nanowires suspended between polysilicon electrodes.
abstract: Realistic integration of 1D materials into future nanodevices is limited by the lack of a manipulation process that allows a large number of nanowires to be arranged into an integrated circuit. In this work, we have grown Si nanowire bridges using a thin-film catalyst in a batch process at 200 °C and characterized the produced devices consisting of a p+-Si contact electrode, a suspended Si nanochannel, and a polysilicon contact electrode. Both the electrodes and connecting lines are made of Si-based materials by conventional low-pressure chemical vapor deposition. The results indicate that these devices can act as gate-controllable Schottky diodes in integrated nanocircuits.
authors.affiliation: National Research Laboratory for Nano Device Physics, Department of Physics, Korea University, Seoul 136-713, Korea.
authors.forename: Yun-Hi
authors.initials: YH
authors.lastname: Lee
authors.affiliation: National Research Laboratory for Nano Device Physics, Department of Physics, Korea University, Seoul 136-713, Korea.
authors.forename: Sungim
authors.initials: S
authors.lastname: Park
keywords: LPCVD; Si nanowires; low-pressure chemical vapor deposition; nanowire junction