title: Spin current, spin accumulation and spin Hall effect.
abstract: Nonlocal spin transport in nanostructured devices with ferromagnetic injector (F1) and detector (F2) electrodes connected to a normal conductor (N) is studied. We reveal how the spin transport depends on interface resistance, electrode resistance, spin polarization and spin diffusion length, and obtain the conditions for efficient spin injection, spin accumulation and spin current in the device. It is demonstrated that the spin Hall effect is caused by spin-orbit scattering in nonmagnetic conductors and gives rise to the conversion between spin and charge currents in a nonlocal device. A method of evaluating spin-orbit coupling in nonmagnetic metals is proposed.
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Agency (JST), Kawaguchi 332-0012, Japan.
authors.forename: Saburo
authors.initials: S
authors.lastname: Takahashi
authors.affiliation: Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan; CREST, Japan Science and Technology Agency (JST), Kawaguchi 332-0012, Japan; Centre for Advanced Study, Norwegian Academy of Science and Letters, Drammensveien 78, N-0271 Oslo, Norway.
authors.forename: Sadamichi
authors.initials: S
authors.lastname: Maekawa
keywords: spin Hall effect; spin accumulation; spin current; spin detection; spin diffusion length; spin injection; spin polarized transport; spin-orbit interaction