title: Tuning charge and correlation effects for a single molecule on a graphene device.
abstract: The ability to understand and control the electronic properties of individual molecules in a device environment is crucial for developing future technologies at the nanometre scale and below. Achieving this, however, requires the creation of three-terminal devices that allow single molecules to be both gated and imaged at the atomic scale. We have accomplished this by integrating a graphene field effect transistor with a scanning tunnelling microscope, thus allowing gate-controlled charging and spectroscopic interrogation of individual tetrafluoro-tetracyanoquinodimethane molecules. We observe a non-rigid shift in the molecule's lowest unoccupied molecular orbital energy (relative to the Dirac point) as a function of gate voltage due to graphene polarization effects. Our results show that electron-electron interactions play an important role in how molecular energy levels align to the graphene Dirac point, and may significantly influence charge transport through individual molecules incorporated in graphene-based nanodevices.
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Wickenburg
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore 117543, Singapore.|Centre for Advanced 2D Materials and Graphene Research National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore.
authors.forename: Jiong
authors.initials: J
authors.lastname: Lu
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Department of Materials, Imperial College London, Prince Consort Rd, London SW7 2BB, UK.
authors.forename: Johannes
authors.initials: J
authors.lastname: Lischner
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Hsin-Zon
authors.initials: HZ
authors.lastname: Tsai
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Arash A
authors.initials: AA
authors.lastname: Omrani
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Physik-Department E20, Technical University of Munich, 85748 Garching, Germany.
authors.forename: Alexander
authors.initials: A
authors.lastname: Riss
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Dahlem Center for Complex Quantum Systems and Fachbereich Physik, Freie Universität Berlin, 14195 Berlin, Germany.
authors.forename: Christoph
authors.initials: C
authors.lastname: Karrasch
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Aaron
authors.initials: A
authors.lastname: Bradley
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Han Sae
authors.initials: HS
authors.lastname: Jung
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Ramin
authors.initials: R
authors.lastname: Khajeh
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.
authors.forename: Dillon
authors.initials: D
authors.lastname: Wong
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Kenji
authors.identifier: http://orcid.org/0000-0003-3701-8119
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Alex
authors.initials: A
authors.lastname: Zettl
authors.affiliation: Centre for Advanced 2D Materials and Graphene Research National University of Singapore, 6 Science Drive 2, 117546 Singapore, Singapore.|Department of Physics, National University of Singapore, 2 Science Drive 3, Singapore 117542, Singapore.
authors.forename: A H Castro
authors.initials: AHC
authors.lastname: Neto
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Steven G
authors.initials: SG
authors.lastname: Louie
authors.affiliation: Department of Physics, University of California, Berkeley, California 94720, USA.|Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|Kavli Energy NanoSciences Institute at the University of California Berkeley and the Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: Michael F
authors.initials: MF
authors.lastname: Crommie