title: Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET.
abstract: Ultrathin Hf-Ti-O higher k gate dielectric films (~2.55 nm) have been prepared by atomic layer deposition. Their electrical properties and application in ETSOI (fully depleted extremely thin SOI) PMOSFETs were studied. It is found that at the Ti concentration of Ti/(Ti + Hf) ~9.4%, low equivalent gate oxide thickness (EOT) of ~0.69 nm and acceptable gate leakage current density of 0.61 A/cm2@ (Vfb- 1)V could be obtained. The conduction mechanism through the gate dielectric is dominated by the F-N tunneling in the gate voltage range of -0.5 to -2 V. Under the same physical thickness and process flow, lower EOT and higher Ion/Ioffratio could be obtained while using Hf-Ti-O as gate dielectric compared with HfO2. With Hf-Ti-O as gate dielectric, two ETSOI PMOSFETs with gate width/gate length (W/L) of 0.5 μm/25 nm and 3 μm/40 nm show good performances such as high Ion, Ion/Ioffratio in the magnitude of 105, and peak transconductance, as well as suitable threshold voltage (-0.3~-0.2 V). Particularly, ETSOI PMOSFETs show superior short-channel control capacity with DIBL <82 mV/V and subthreshold swing <70 mV/decade.
authors.affiliation: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China. xiongyuhua@grinm.com.
authors.forename: Yuhua
authors.identifier: http://orcid.org/0000-0002-8696-9423
authors.initials: Y
authors.lastname: Xiong
authors.affiliation: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China.
authors.forename: Xiaoqiang
authors.initials: X
authors.lastname: Chen
authors.affiliation: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Wei
authors.affiliation: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Du
authors.affiliation: Advanced Electronic Materials Institute, General Research Institute for Nonferrous Metals, Beijing, 100088, China.
authors.forename: Hongbin
authors.initials: H
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Zhaoyun
authors.initials: Z
authors.lastname: Tang
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Tang
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Wenwu
authors.initials: W
authors.lastname: Wang
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Jiang
authors.initials: J
authors.lastname: Yan
keywords: Atomic layer deposition; ETSOI MOSFET; Electrical properties; Higher k; Ultrathin Hf-Ti-O gate dielectric films