title: Resonant tunneling based graphene quantum dot memristors.
abstract: In this paper, we model two-terminal all graphene quantum dot (GQD) based resistor-type memory devices (memristors). The resistive switching is achieved by resonant electron tunneling. We show that parallel GQDs can be used to create multi-state memory circuits. The number of states can be optimised with additional voltage sources, whilst the noise margin for each state can be controlled by appropriately choosing the branch resistance. A three-terminal GQD device configuration is also studied. The addition of an isolated gate terminal can be used to add further or modify the states of the memory device. The proposed devices provide a promising route towards volatile memory devices utilizing only atomically thin two-dimensional graphene.
authors.affiliation: Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia. xuanp@student.unimelb.edu.au and Centre for Neural Engineering (CfNE), University of Melbourne, Parkville, Victoria 3010, Australia.
authors.forename: Xuan
authors.initials: X
authors.lastname: Pan
authors.affiliation: Department of Electrical and Electronic Engineering, University of Melbourne, Parkville, Victoria 3010, Australia. xuanp@student.unimelb.edu.au and Centre for Neural Engineering (CfNE), University of Melbourne, Parkville, Victoria 3010, Australia.
authors.forename: Efstratios
authors.initials: E
authors.lastname: Skafidas