title: Highly Bendable In-Ga-ZnO Thin Film Transistors by Using a Thermally Stable Organic Dielectric Layer.
abstract: Flexible In-Ga-ZnO (IGZO) thin film transistor (TFT) on a polyimide substrate is produced by employing a thermally stable SA7 organic material as the multi-functional barrier and dielectric layers. The IGZO channel layer was sputtered at Ar:O2gas flow rate of 100:1 sccm and the fabricated TFT exhibited excellent transistor performances with a mobility of 15.67 cm2/Vs, a threshold voltage of 6.4 V and an on/off current ratio of 4.5 × 105. Further, high mechanical stability was achieved by the use of organic/inorganic stacking of dielectric and channel layers. Thus, the IGZO transistor endured unprecedented bending strain up to 3.33% at a bending radius of 1.5 mm with no significant degradation in transistor performances along with a superior reliability up to 1000 cycles.
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Yogeenth
authors.initials: Y
authors.lastname: Kumaresan
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Yusin
authors.initials: Y
authors.lastname: Pak
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Namsoo
authors.initials: N
authors.lastname: Lim
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Yonghun
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Department of Advanced Materials Engineering for Information &Electronics, Kyung Hee University, Yongin, Gyeonggi-do 446-701, Republic of Korea.
authors.forename: Min-Ji
authors.initials: MJ
authors.lastname: Park
authors.affiliation: Department of Advanced Materials Engineering for Information &Electronics, Kyung Hee University, Yongin, Gyeonggi-do 446-701, Republic of Korea.
authors.forename: Sung-Min
authors.initials: SM
authors.lastname: Yoon
authors.affiliation: Dongjin Semichem Co. Ltd, Electronic Materials Division, Hwaseong, Gyeonggi-do 445-935, Republic of Korea.
authors.forename: Hyoc-Min
authors.initials: HM
authors.lastname: Youn
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul 136-701, Republic of Korea.
authors.forename: Heon
authors.initials: H
authors.lastname: Lee
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: School of Materials Science and Engineering, Gwangju Institute of Science and Technology, 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
authors.forename: Gun Young
authors.initials: GY
authors.lastname: Jung