title: Reconfigurable exciton-plasmon interconversion for nanophotonic circuits.
abstract: The recent challenges for improving the operation speed of nanoelectronics have motivated research on manipulating light in on-chip integrated circuits. Hybrid plasmonic waveguides with low-dimensional semiconductors, including quantum dots and quantum wells, are a promising platform for realizing sub-diffraction limited optical components. Meanwhile, two-dimensional transition metal dichalcogenides (TMDs) have received broad interest in optoelectronics owing to tightly bound excitons at room temperature, strong light-matter and exciton-plasmon interactions, available top-down wafer-scale integration, and band-gap tunability. Here, we demonstrate principal functionalities for on-chip optical communications via reconfigurable exciton-plasmon interconversions in ∼200-nm-diameter Ag-nanowires overlapping onto TMD transistors. By varying device configurations for each operation purpose, three active components for optical communications are realized: field-effect exciton transistors with a channel length of ∼32 μm, field-effect exciton multiplexers transmitting multiple signals through a single NW and electrical detectors of propagating plasmons with a high On/Off ratio of∼190. Our results illustrate the unique merits of two-dimensional semiconductors for constructing reconfigurable device architectures in integrated nanophotonic circuits.
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Hyun Seok
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Dinh Hoa
authors.initials: DH
authors.lastname: Luong
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Min Su
authors.identifier: 0000-0002-4423-3290
authors.initials: MS
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Youngjo
authors.initials: Y
authors.lastname: Jin
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Hyun
authors.initials: H
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Seokjoon
authors.initials: S
authors.lastname: Yun
authors.affiliation: Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 440-746, Korea.|Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Korea.
authors.forename: Young Hee
authors.identifier: 0000-0001-7403-8157
authors.initials: YH
authors.lastname: Lee