title: Gate-Controlled WSe2Transistors Using a Buried Triple-Gate Structure.
abstract: In the present paper, we show tungsten diselenide (WSe2) devices that can be tuned to operate as n-type and p-type field-effect transistors (FETs) as well as band-to-band tunnel transistors on the same flake. Source, channel, and drain areas of the WSe2flake are adjusted, using buried triple-gate substrates with three independently controllable gates. The device characteristics found in the tunnel transistor configuration are determined by the particular geometry of the buried triple-gate structure, consistent with a simple estimation of the expected off-state behavior.
authors.affiliation: Intelligent Microsystems Chair, TU Dortmund, Emil-Figge-Str. 68, 44227, Dortmund, Germany.|Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany.|Present address: Infineon Technologies, Siemensstrasse 2, 9500, Villach, Austria.
authors.forename: M R
authors.initials: MR
authors.lastname: Müller
authors.affiliation: Birck Nanotechnology Center, Purdue University, 1205 W. State Street, West Lafayette, IN, 47907, USA.
authors.forename: R
authors.initials: R
authors.lastname: Salazar
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
authors.forename: S
authors.initials: S
authors.lastname: Fathipour
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
authors.forename: H
authors.initials: H
authors.lastname: Xu
authors.affiliation: Intelligent Microsystems Chair, TU Dortmund, Emil-Figge-Str. 68, 44227, Dortmund, Germany.
authors.forename: K
authors.initials: K
authors.lastname: Kallis
authors.affiliation: Institute of Semiconductor and Microsystems Technology, TU Dresden, 01062, Dresden, Germany.
authors.forename: U
authors.initials: U
authors.lastname: Künzelmann
authors.affiliation: Department of Electrical Engineering, University of Notre Dame, Notre Dame, IN, 46556, USA.
authors.forename: A
authors.initials: A
authors.lastname: Seabaugh
authors.affiliation: Birck Nanotechnology Center, Purdue University, 1205 W. State Street, West Lafayette, IN, 47907, USA.
authors.forename: J
authors.initials: J
authors.lastname: Appenzeller
authors.affiliation: Institute of Semiconductor Electronics, RWTH Aachen University, Sommerfeldstr. 24, 52074, Aachen, Germany. knoch@iht.rwth-aachen.de.
authors.forename: J
authors.identifier: http://orcid.org/0000-0001-5136-9287
authors.initials: J
authors.lastname: Knoch
keywords: Electrostatic doping; Reconfigurable device; Tungsten diselenide (WSe2)