title: Metal-Semiconductor Phase-Transition in WSe2(1-x)Te2xMonolayer.
abstract: A metal-semiconductor phase transition in a ternary transition metal dichalcogenide (TMD) monolayer is achieved by alloying Te into WSe2(WSe2(1-x)Te2x, where x = 0%-100%). The optical bandgaps of the WSe2(1-x)Te2xmonolayer can be tuned from 1.67 to 1.44 eV (2H semiconductor) and drops to 0 eV (1Td metal), which opens up an exciting opportunity in functional electronic/optoelectronic devices.
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Peng
authors.initials: P
authors.lastname: Yu
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan.
authors.forename: Junhao
authors.initials: J
authors.lastname: Lin
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Linfeng
authors.initials: L
authors.lastname: Sun
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Quang Luan
authors.initials: QL
authors.lastname: Le
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Xuechao
authors.initials: X
authors.lastname: Yu
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin Hausvogteiplatz 5-7, 10117, Berlin, Germany.
authors.forename: Guanhui
authors.initials: G
authors.lastname: Gao
authors.affiliation: Department of Physics, National University of Singapore, 117542, Singapore.
authors.forename: Chuang-Han
authors.initials: CH
authors.lastname: Hsu
authors.affiliation: Department of Physics, National University of Singapore, 117542, Singapore.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.affiliation: Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.
authors.forename: Tay-Rong
authors.initials: TR
authors.lastname: Chang
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Qi Jie
authors.initials: QJ
authors.lastname: Wang
authors.affiliation: Department of Physics, National Tsing Hua University, Hsinchu, 30013, Taiwan.|Institute of Physics, Academia Sinica, Taipei, 11529, Taiwan.
authors.forename: Horng-Tay
authors.initials: HT
authors.lastname: Jeng
authors.affiliation: Department of Physics, National University of Singapore, 117542, Singapore.
authors.forename: Hsin
authors.initials: H
authors.lastname: Lin
authors.affiliation: Paul-Drude-Institut für Festkörperelektronik Leibniz-Institut im Forschungsverbund Berlin Hausvogteiplatz 5-7, 10117, Berlin, Germany.
authors.forename: Achim
authors.initials: A
authors.lastname: Trampert
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Zexiang
authors.initials: Z
authors.lastname: Shen
authors.affiliation: National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, 305-8565, Japan.
authors.forename: Kazu
authors.initials: K
authors.lastname: Suenaga
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
keywords: 2D materials; band gap; field-effect transistor; metal; semiconductors