title: Recent progress in GeSi electro-absorption modulators.
abstract: Electro-absorption from GeSi heterostructures is receiving growing attention as a high performance optical modulator for short distance optical interconnects. Ge incorporation with Si allows strong modulation mechanism using the Franz-Keldysh effect and the quantum-confined Stark effect from bulk and quantum well structures at telecommunication wavelengths. In this review, we discuss the current state of knowledge and the on-going challenges concerning the development of high performance GeSi electro-absorption modulators. We also provide feasible future prospects concerning this research topic.
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Papichaya
authors.initials: P
authors.lastname: Chaisakul
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Delphine
authors.initials: D
authors.lastname: Marris-Morini
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Mohamed-Said
authors.initials: MS
authors.lastname: Rouifed
authors.affiliation: L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy.
authors.forename: Jacopo
authors.initials: J
authors.lastname: Frigerio
authors.affiliation: L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy.
authors.forename: Daniel
authors.initials: D
authors.lastname: Chrastina
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Jean-René
authors.initials: JR
authors.lastname: Coudevylle
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Xavier Le
authors.initials: XL
authors.lastname: Roux
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Samson
authors.initials: S
authors.lastname: Edmond
authors.affiliation: L-NESS, Dipartimento di Fisica del Politecnico di Milano, Polo di Como, Via Anzani 42, I-22100 Como, Italy.
authors.forename: Giovanni
authors.initials: G
authors.lastname: Isella
authors.affiliation: Institut d'Electronique Fondamentale, Université Paris-Sud, CNRS UMR 8622, Bât. 220, F-91405 Orsay Cedex, France.
authors.forename: Laurent
authors.initials: L
authors.lastname: Vivien
keywords: Electro-absorption; Franz–Keldysh effect; GeSi; Multiple quantum wells; Optical modulator; Quantum-confined Stark effect