title: A CMOS silicon spin qubit.
abstract: Silicon, the main constituent of microprocessor chips, is emerging as a promising material for the realization of future quantum processors. Leveraging its well-established complementary metal-oxide-semiconductor (CMOS) technology would be a clear asset to the development of scalable quantum computing architectures and to their co-integration with classical control hardware. Here we report a silicon quantum bit (qubit) device made with an industry-standard fabrication process. The device consists of a two-gate, p-type transistor with an undoped channel. At low temperature, the first gate defines a quantum dot encoding a hole spin qubit, the second one a quantum dot used for the qubit read-out. All electrical, two-axis control of the spin qubit is achieved by applying a phase-tunable microwave modulation to the first gate. The demonstrated qubit functionality in a basic transistor-like device constitutes a promising step towards the elaboration of scalable spin qubit geometries in a readily exploitable CMOS platform.
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: R
authors.initials: R
authors.lastname: Maurand
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: X
authors.initials: X
authors.lastname: Jehl
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: D
authors.initials: D
authors.lastname: Kotekar-Patil
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: A
authors.identifier: http://orcid.org/0000-0003-2028-3995
authors.initials: A
authors.lastname: Corna
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: H
authors.initials: H
authors.lastname: Bohuslavskyi
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: R
authors.initials: R
authors.lastname: Laviéville
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: L
authors.initials: L
authors.lastname: Hutin
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: S
authors.initials: S
authors.lastname: Barraud
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, LETI, MINATEC Campus, F-38054 Grenoble, France.
authors.forename: M
authors.initials: M
authors.lastname: Vinet
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: M
authors.initials: M
authors.lastname: Sanquer
authors.affiliation: University Grenoble Alpes, F-38000 Grenoble, France.|CEA, INAC-PHELIQS, F-38000 Grenoble, France.
authors.forename: S
authors.initials: S
authors.lastname: De Franceschi