title: Intrinsic stability of ferroelectric and piezoelectric properties of epitaxial PbZr0.45Ti0.55O3thin films on silicon in relation to grain tilt.
abstract: Piezoelectric thin films of PbZr0.45Ti0.55O3were grown on Si substrates in four different ways, resulting in different crystalline structures, as determined by x-ray analysis. The crystalline structures were different in the spread in tilt angle and the in-plane alignment of the crystal planes between different grains. It is found that the deviations of the ferroelectric polarization loop from that of the ideal rectangular loop (reduction of the remanent polarization with respect to the saturation polarization, dielectric constant of the film, slanting of the loop, coercive field value) all scale with the average tilt angle. A model is derived based on the assumption that the tilted grain boundaries between grains affect the film properties locally. This model describes the observed trends. The effective piezoelectric coefficientd33,effshows also a weak dependence on the average tilt angle for films grown in a single layer, whereas it is strongly reduced for the films deposited in multiple layers. The least affected properties are obtained for the most epitaxial films, i.e. grown on a SrTiO3epitaxial seed layer, by pulsed laser deposition. These films are intrinsically stable and do not require poling to acquire these stable properties.
authors.affiliation: Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, PO Box 217, 7500-AE Enschede, The Netherlands.
authors.forename: Evert P
authors.initials: EP
authors.lastname: Houwman
authors.affiliation: Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, PO Box 217, 7500-AE Enschede, The Netherlands; SolMateS BV, Drienerlolaan 5, Building 6, 7522-NB Enschede, The Netherlands; International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No. 1 Dai Co Viet Road, Hanoi, Vietnam.
authors.forename: Minh D
authors.initials: MD
authors.lastname: Nguyen
authors.affiliation: Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, PO Box 217, 7500-AE Enschede, The Netherlands; SolMateS BV, Drienerlolaan 5, Building 6, 7522-NB Enschede, The Netherlands.
authors.forename: Matthijn
authors.initials: M
authors.lastname: Dekkers
authors.affiliation: Inorganic Materials Science (IMS), MESA + Institute for Nanotechnology, University of Twente, PO Box 217, 7500-AE Enschede, The Netherlands.
authors.forename: Guus
authors.initials: G
authors.lastname: Rijnders
keywords: 10.1; 20.11; 30.1; PZT; epitaxial; ferroelectric; grain boundary; piezoelectric; stability; thin film