title: High-Electron-Mobility and Air-Stable 2D Layered PtSe2FETs.
abstract: The electrical and optical measurements, in combination with density functional theory calculations, show distinct layer-dependent semiconductor-to-semimetal evolution of 2D layered PtSe2. The high room-temperature electron mobility and near-infrared photo-response, together with much better air-stability, make PtSe2a versatile electronic 2D layered material.
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
authors.forename: Yuda
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.|Department of Physics, Renmin University of China, Beijing, 100872, P. R. China.|Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China.
authors.forename: Jingsi
authors.initials: J
authors.lastname: Qiao
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Yu
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Peng
authors.initials: P
authors.lastname: Yu
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.
authors.forename: Kang
authors.initials: K
authors.lastname: Xu
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
authors.forename: Shu Ping
authors.initials: SP
authors.lastname: Lau
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Wu
authors.initials: W
authors.lastname: Zhou
authors.affiliation: School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
authors.affiliation: National Laboratory of Solid State Microstructures, School of Electronic Science and Engineering, and, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China.
authors.forename: Xinran
authors.initials: X
authors.lastname: Wang
authors.affiliation: Department of Physics, Renmin University of China, Beijing, 100872, P. R. China.|Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-nano Devices, Renmin University of China, Beijing, 100872, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ji
authors.affiliation: Department of Applied Physics, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, P. R. China.|The Hong Kong Polytechnic University Shenzhen Research Institute, Shenzhen, 518057, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Chai
keywords: 2D layered materials; PtSe2
  ; electronic structure; mobility; transition metal dichalcogenides