title: Shift in room-temperature photoluminescence of low-fluence Si+-implanted SiO2films subjected to rapid thermal annealing.
abstract: We experimentally demonstrate the effect of the rapid thermal annealing (RTA) in nitrogen flow on photoluminescence (PL) of SiO2films implanted by different doses of Si+ions. Room-temperature PL from 400-nm-thick SiO2films implanted to a dose of 3×1016cm-2shifted from 2.1 to 1.7 eV upon increasing RTA temperature (950-1150 °C) and duration (5-20 s). The reported approach of implanting silicon into SiO2films followed by RTA may be effective for tuning Si-based photonic devices.
authors.affiliation: Department of Avionics Engineering, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan, Republic of China.
authors.forename: Ming-Yue
authors.initials: MY
authors.lastname: Fu
authors.affiliation: Department of Mathematics and Physics, Air Force Academy, Kangshan, Kaohsiung 820, Taiwan, Republic of China.
authors.forename: Jen-Hwan
authors.initials: JH
authors.lastname: Tsai
authors.affiliation: Department of Chemical and Materials Engineering, National Kaohsiung University, Nan-Tzu District, Kaohsiung 811, Taiwan, Republic of China.
authors.forename: Cheng-Fu
authors.initials: CF
authors.lastname: Yang
authors.affiliation: Department of Physics, Chinese Military Academy, Fengshan, Kaohsiung 830, Taiwan, Republic of China.
authors.forename: Chih-Hsiung
authors.initials: CH
authors.lastname: Liao
keywords: Si+ implantation; SiO2 films; photoluminescence; rapid thermal annealing (RTA)