title: PbS Colloidal Quantum Dot Photodetectors operating in the near infrared.
abstract: Colloidal quantum dots have recently attracted lot of interest in the fabrication of optoelectronic devices due to their unique optical properties and their simple and low cost fabrication. PbS nanocrystals emerged as the most advanced colloidal material for near infrared photodetectors. In this work we report on the fabrication and characterization of PbS colloidal quantum dot photoconductors. In order to make devices suitable for the monolithic integration with silicon electronics, we propose a simple and low cost process for the fabrication of photodetectors and investigate their operation at very low voltage bias. Our photoconductors feature high responsivity and detectivity at 1.3 μm and 1 V bias with maximum values of 30 A/W and 2·1010cmHz1/2W-1, respectively. Detectivity close to 1011cmHz1/2W-1has been obtained resorting to bridge sensor readout.
authors.affiliation: NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy.
authors.forename: Andrea
authors.initials: A
authors.lastname: De Iacovo
authors.affiliation: NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy.
authors.forename: Carlo
authors.initials: C
authors.lastname: Venettacci
authors.affiliation: NOOEL-Nonlinear Optics and OptoElectronics Lab, Dept. of Engineering, University Roma Tre, 00146, Rome, Italy.
authors.forename: Lorenzo
authors.initials: L
authors.lastname: Colace
authors.affiliation: CNR, Istituto dei Materiali per l'Elettronica ed il Magnetismo, Rome, Italy.
authors.forename: Leonardo
authors.initials: L
authors.lastname: Scopa
authors.affiliation: CNR, Istituto dei Materiali per l'Elettronica ed il Magnetismo, Rome, Italy.
authors.forename: Sabrina
authors.initials: S
authors.lastname: Foglia