title: 50-Fold EQE Improvement up to 6.27% of Solution-Processed All-Inorganic Perovskite CsPbBr3QLEDs via Surface Ligand Density Control.
abstract: Solution-processed CsPbBr3quantum-dot light-emitting diodes with a 50-fold external quantum efficiency improvement (up to 6.27%) are achieved through balancing surface passivation and carrier injection via ligand density control (treating with hexane/ethyl acetate mixed solvent), which induces the coexistence of high levels of ink stability, photoluminescence quantum yields, thin-film uniformity, and carrier-injection efficiency.
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Jianhai
authors.initials: J
authors.lastname: Li
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Leimeng
authors.initials: L
authors.lastname: Xu
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wang
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Jizhong
authors.initials: J
authors.lastname: Song
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Jiawei
authors.initials: J
authors.lastname: Chen
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Xue
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Yuhui
authors.initials: Y
authors.lastname: Dong
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Cai
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Qingsong
authors.initials: Q
authors.lastname: Shan
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Boning
authors.initials: B
authors.lastname: Han
authors.affiliation: Institute of Optoelectronics and Nanomaterials, Herbert Gleiter Institute of Nanoscience, MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China.
authors.forename: Haibo
authors.initials: H
authors.lastname: Zeng
keywords: all-inorganic perovskites; cesium lead halides (CsPbX3); colloidal nanocrystals; quantum-dot light-emitting diodes (QLEDs); surface ligand density control