title: Defect-Resistant Radiative Performance of m-Plane Immiscible Al1-xInxN Epitaxial Nanostructures for Deep-Ultraviolet and Visible Polarized Light Emitters.
abstract: Planar vacuum-fluorescent-display devices emitting polarized UV-C, blue, and green light are demonstrated using immiscible Al1-xInxN nanostructures grown in nonpolar m-directions. Despite the presence of high concentration of nonradiative recombination centers, the Al1-xInxN nanostructures emit polarized light with the luminescence lifetimes of 22-32 ps at 300 K. This defect-resistant radiative performance suggests supernormal localized characteristics of electron-hole pairs.
authors.affiliation: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan.
authors.forename: Shigefusa F
authors.initials: SF
authors.lastname: Chichibu
authors.affiliation: Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba, Sendai, 980-8577, Japan.
authors.forename: Kazunobu
authors.initials: K
authors.lastname: Kojima
authors.affiliation: Division of Applied Physics, Faculty of Pure and Applied Sciences, University of Tsukuba, 1-1-1 Tennodai, Tsukuba, 305-8573, Japan.
authors.forename: Akira
authors.initials: A
authors.lastname: Uedono
authors.affiliation: Futaba Corporation, 1080 Yabutsuka, Chosei-mura, Chosei-gun, Chiba, 299-4395, Japan.
authors.forename: Yoshitaka
authors.initials: Y
authors.lastname: Sato
keywords: deep-ultraviolet light; immiscible alloys; localization; nonradiative recombination; point defects; polarized light emitters; radiative recombination