title: An atomically thin layer of Ru/MoS2heterostructure: structural, electronic, and magnetic properties.
abstract: The fabrication of a transition metal (TM) atomically thin layer with robust ferromagnetic ordering (FM) for the continuous miniaturization of spintronic and quantum computing devices is desired. Through first-principles calculations, we establish that Ru atoms can be epitaxially aligned on MoS2monolayers, thus forming an atomically thin layer of 2D Ru/MoS2heterostructure with high structural stability. The Ru layer possesses a robust FM (more than 300 K) and an out-of-plane easy axis with the magnetic anisotropy energy (MAE) of ∼3.4 meV per atom. In particular, we find that the FM can be switched by an external electric field (Efield) of 1.5 V nm-1. We propose that this atomically thin layer of Ru/MoS2heterostructure can be used as an alternative candidate for free-standing magnetic TM layers and provides new possibilities to design 2D spintronic devices.
authors.affiliation: Institute of Communication and Technology, Communication University of China, Nanguang College, Nanjing 211172, China.
authors.forename: Chenghuan
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, China. qc119@seu.edu.cn.
authors.forename: Rongqing
authors.initials: R
authors.lastname: Zhou
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, China. qc119@seu.edu.cn.
authors.forename: Zhaohui
authors.initials: Z
authors.lastname: Peng
authors.affiliation: Institute of Communication and Technology, Communication University of China, Nanguang College, Nanjing 211172, China.
authors.forename: Jinfu
authors.initials: J
authors.lastname: Zhu
authors.affiliation: Department of Physics, Southeast University, Nanjing 211189, China. qc119@seu.edu.cn.
authors.forename: Qian
authors.initials: Q
authors.lastname: Chen