title: Measurement of the internal magnetic fluctuation by the transport of runaways on J-TEXT.
abstract: The measurement of internal magnetic fluctuation is important for the study of transport in tokamak plasmas. The runaway electron transport induced by the sawtooth crash can be used to obtain the internal magnetic fluctuation. Inversed sawtooth-like activities on hard x-ray (HXR) fluxes following sawtooth activities were observed after the application of electrode biasing on J-TEXT tokamak. The runaway diffusion coefficient Dris deduced to be about 30 m2/s according to the time delay of HXR flux peaks to the sawtooth crashes. The averaged value of normalized magnetic fluctuation in the discharges with electrode biasing was increased to the order of 1 × 10-4.
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Z Y
authors.initials: ZY
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: D W
authors.initials: DW
authors.lastname: Huang
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: R H
authors.initials: RH
authors.lastname: Tong
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: W
authors.initials: W
authors.lastname: Yan
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Y N
authors.initials: YN
authors.lastname: Wei
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: T K
authors.initials: TK
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Z H
authors.initials: ZH
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: X Q
authors.initials: XQ
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Z P
authors.initials: ZP
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: Z J
authors.initials: ZJ
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Advanced Electromagnetic Engineering and Technology, School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, People's Republic of China.
authors.forename: G
authors.initials: G
authors.lastname: Zhuang