title: Oxide Heteroepitaxy for Flexible Optoelectronics.
abstract: The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Yugandhar
authors.initials: Y
authors.lastname: Bitla
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Ching
authors.initials: C
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Hsien-Chang
authors.initials: HC
authors.lastname: Lee
authors.affiliation: Institute of Physics, Academia Sinica , Taipei 11529, Taiwan.
authors.forename: Thi Hien
authors.initials: TH
authors.lastname: Do
authors.affiliation: Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Chun-Hao
authors.initials: CH
authors.lastname: Ma
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Le Van
authors.initials: LV
authors.lastname: Qui
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Chun-Wei
authors.initials: CW
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Wu
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.
authors.forename: Li
authors.initials: L
authors.lastname: Chang
authors.affiliation: Institute of Electronics Engineering, National Tsing Hua University , Hsinchu 30013, Taiwan.
authors.forename: Po-Wen
authors.initials: PW
authors.lastname: Chiu
authors.affiliation: Department of Materials Science and Engineering, National Chiao Tung University , Hsinchu 30010, Taiwan.|Institute of Physics, Academia Sinica , Taipei 11529, Taiwan.|Material and Chemical Research Laboratories, Industrial Technology Research Institute , Hsinchu 31040, Taiwan.
authors.forename: Ying-Hao
authors.initials: YH
authors.lastname: Chu
keywords: flexible electronics; heteroepitaxy; muscovite mica; optoelectronics; transparent conducting oxides