title: Modulated switching current density and spin-orbit torques in MnGa/Ta films with inserting ferromagnetic layers.
abstract: We report modulated switching current density and spin-orbit torques (SOT) in MnGa/Ta films with inserting very thin Co2FeAl and Co layers. Ferromagnetic coupling has been found in MnGa/Co2FeAl/Ta, resulting in a decreased effective anisotropy field. On the contrary, in MnGa/Co/Ta, antiferromagnetic coupling plays a dominant role. The switching current density Jcin MnGa/Ta is 8.5 × 107A/cm2. After inserting 0.8-nm-thick Co2FeAl and Co, theJcbecomes 5 × 107A/cm2and 9 × 107A/cm2, respectively. By performing adiabatic harmonic Hall voltage measurements, it is demonstrated that the inserted Co2FeAl layer has mainly enhanced the field-like torques, while in MnGa/Co/Ta the damping-like torques have been enhanced. Finally, the enhanced spin Hall effect (SHE) has also been studied using the spin Hall magnetoresistance measurement. The modulated Jcand SOT are ascribed to the combination of magnetic coupling, Rashba effect and SHE at the interfaces.
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors.forename: Kangkang
authors.initials: K
authors.lastname: Meng
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Miao
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors.forename: Xiaoguang
authors.initials: X
authors.lastname: Xu
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Jiaxing
authors.initials: J
authors.lastname: Xiao
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhao
authors.affiliation: School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Jiang