title: Precisely Aligned Monolayer MoS2Epitaxially Grown on h-BN basal Plane.
abstract: Control of the precise lattice alignment of monolayer molybdenum disulfide (MoS2) on hexagonal boron nitride (h-BN) is important for both fundamental and applied studies of this heterostructure but remains elusive. The growth of precisely aligned MoS2domains on the basal plane of h-BN by a low-pressure chemical vapor deposition technique is reported. Only relative rotation angles of 0° or 60° between MoS2and h-BN basal plane are present. Domains with same orientation stitch and form single-crystal, domains with different orientations stitch and from mirror grain boundaries. In this way, the grain boundary is minimized and a continuous film stitched by these two types of domains with only mirror grain boundaries is obtained. This growth strategy is also applicable to other 2D materials growth.
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Hua
authors.initials: H
authors.lastname: Yu
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Zhengzhong
authors.initials: Z
authors.lastname: Yang
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|Department of Physics, Renmin University of China, Beijing, 100872, China.
authors.forename: Luojun
authors.initials: L
authors.lastname: Du
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jinan
authors.initials: J
authors.lastname: Shi
authors.affiliation: College of Physics and Electronic Information, Gannan Normal University, Jiangxi, 341000, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Chen
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Mengzhou
authors.initials: M
authors.lastname: Liao
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jing
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jianling
authors.initials: J
authors.lastname: Meng
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Guole
authors.initials: G
authors.lastname: Wang
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jianqi
authors.initials: J
authors.lastname: Zhu
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
authors.forename: Rong
authors.initials: R
authors.lastname: Yang
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
authors.forename: Dongxia
authors.initials: D
authors.lastname: Shi
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.affiliation: Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100190, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100190, China.
authors.forename: Guangyu
authors.initials: G
authors.lastname: Zhang
keywords: CVD; domain boundary; epitaxial growth; monolayer MoS2; rotational alignment