title: Piezopotential-Programmed Multilevel Nonvolatile Memory As Triggered by Mechanical Stimuli.
abstract: We report the development of a piezopotential-programmed nonvolatile memory array using a combination of ion gel-gated field-effect transistors (FETs) and piezoelectric nanogenerators (NGs). Piezopotentials produced from the NGs under external strains were able to replace the gate voltage inputs associated with the programming/erasing operation of the memory, which reduced the power consumption compared with conventional memory devices. Multilevel data storage in the memory device could be achieved by varying the external bending strain applied to the piezoelectric NGs. The resulting devices exhibited good memory performance, including a large programming/erasing current ratio that exceeded 103, multilevel data storage of 2 bits (over 4 levels), performance stability over 100 cycles, and stable data retention over 3000 s. The piezopotential-programmed multilevel nonvolatile memory device described here is important for applications in data-storable electronic skin and advanced human-robot interface operations.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Nanotechnology (NCNST), Beijing 100083, P. R. China.
authors.forename: Qijun
authors.initials: Q
authors.lastname: Sun
authors.forename: Dong Hae
authors.initials: DH
authors.lastname: Ho
authors.forename: Yongsuk
authors.initials: Y
authors.lastname: Choi
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Nanotechnology (NCNST), Beijing 100083, P. R. China.
authors.forename: Caofeng
authors.initials: C
authors.lastname: Pan
authors.affiliation: Department of Organic Materials and Fiber Engineering, Soongsil University , Seoul 156-743, Korea.
authors.forename: Do Hwan
authors.initials: DH
authors.lastname: Kim
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, National Center for Nanoscience and Nanotechnology (NCNST), Beijing 100083, P. R. China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.identifier: 0000-0002-5530-0380
authors.initials: ZL
authors.lastname: Wang
authors.forename: Jeong Ho
authors.identifier: 0000-0002-1030-9920
authors.initials: JH
authors.lastname: Cho
keywords: multilevel data storage; nanogenerator; nonvolatile memory; piezopotential; transistor