title: Infrared Response and Optoelectronic Memory Device Fabrication Based on Epitaxial VO2Film.
abstract: In this work, high-quality VO2epitaxial films were prepared on high-conductivity n-GaN (0001) crystal substrates via an oxide molecular beam epitaxy method. By fabricating a two-terminal VO2/GaN film device, we observed that the infrared transmittance and resistance of VO2films could be dynamically controlled by an external bias voltage. Based on the hysteretic switching effect of VO2in infrared range, an optoelectronic memory device was achieved. This memory device was operated under the "electrical writing-optical reading" mode, which shows promising applications in VO2-based optoelectronic device in the future.
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China.|National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China.
authors.forename: Lele
authors.initials: L
authors.lastname: Fan
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China.
authors.forename: Yuliang
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Science and Technology on Electro-optical Information Security Control Laboratory, Tianjin 300300, China.
authors.forename: Qianghu
authors.initials: Q
authors.lastname: Liu
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China.
authors.forename: Shi
authors.initials: S
authors.lastname: Chen
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Zhu
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China.
authors.forename: Qiangqiang
authors.initials: Q
authors.lastname: Meng
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China.|School of Physical Science and Technology, Nanjing Normal University , Nanjing 210023, People's Republic of China.
authors.forename: Baolin
authors.initials: B
authors.lastname: Wang
authors.affiliation: Key Laboratory for Advanced Technology in Environmental Protection of Jiangsu Province, Yancheng Institute of Technology , Yancheng 224051, China.
authors.forename: Qinfang
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Ren
authors.affiliation: National Synchrotron Radiation Laboratory, University of Science and Technology of China , Hefei, 230029, China.
authors.forename: Chongwen
authors.initials: C
authors.lastname: Zou
keywords: infrared transmission; memory device; n-GaN; phase transition modulation; vanadium dioxide