title: Interface Engineering of Domain Structures in BiFeO3Thin Films.
abstract: A wealth of fascinating phenomena have been discovered at the BiFeO3domain walls, examples such as domain wall conductivity, photovoltaic effects, and magnetoelectric coupling. Thus, the ability to precisely control the domain structures and accurately study their switching behaviors is critical to realize the next generation of novel devices based on domain wall functionalities. In this work, the introduction of a dielectric layer leads to the tunability of the depolarization field both in the multilayers and superlattices, which provides a novel approach to control the domain patterns of BiFeO3films. Moreover, we are able to study the switching behavior of the first time obtained periodic 109° stripe domains with a thick bottom electrode. Besides, the precise controlling of pure 71° and 109° periodic stripe domain walls enable us to make a clear demonstration that the exchange bias in the ferromagnet/BiFeO3system originates from 109° domain walls. Our findings provide future directions to study the room temperature electric field control of exchange bias and open a new pathway to explore the room temperature multiferroic vortices in the BiFeO3system.
authors.affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.|Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.|School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China.|Department of Physics, University of California Berkeley , Berkeley, California 94720, United States.
authors.forename: Deyang
authors.identifier: 0000-0002-8370-6409
authors.initials: D
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
authors.forename: Zuhuang
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Qian
authors.initials: Q
authors.lastname: He
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
authors.forename: James D
authors.initials: JD
authors.lastname: Clarkson
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
authors.forename: Claudy R
authors.initials: CR
authors.lastname: Serrao
authors.affiliation: Department of Materials Science and Engineering, University of California, Berkeley , Berkeley, California 94720, United States.
authors.forename: Ajay K
authors.initials: AK
authors.lastname: Yadav
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
authors.forename: Mark E
authors.initials: ME
authors.lastname: Nowakowski
authors.affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Fan
authors.affiliation: School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
authors.forename: Long
authors.initials: L
authors.lastname: You
authors.affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.
authors.forename: Xingsen
authors.initials: X
authors.lastname: Gao
authors.affiliation: School of Materials Science and Engineering, South China University of Technology , Guangzhou 510640, China.
authors.forename: Dechang
authors.initials: D
authors.lastname: Zeng
authors.affiliation: Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Lang
authors.initials: L
authors.lastname: Chen
authors.affiliation: Materials Science and Technology Division, Oak Ridge National Laboratory , Oak Ridge, Tennessee 37831, United States.
authors.forename: Albina Y
authors.initials: AY
authors.lastname: Borisevich
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
authors.forename: Sayeef
authors.initials: S
authors.lastname: Salahuddin
authors.affiliation: Institute for Advanced Materials and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials, South China Normal University , Guangzhou 510006, China.|Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Jun-Ming
authors.initials: JM
authors.lastname: Liu
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California Berkeley , Berkeley, California 94720, United States.
authors.forename: Jeffrey
authors.initials: J
authors.lastname: Bokor
keywords: BiFeO3; depolarization field; domain wall; exchange bias; multiferroic; superlattices