title: A homogeneous atomic layer MoS2(1-x)Se2xalloy prepared by low-pressure chemical vapor deposition, and its properties.
abstract: We report the growth of large-area monolayer MoS2(1-x)Se2xalloys with controlled morphologies using a low-pressure chemical vapor deposition (CVD) method. MoS2(1-x)Se2xalloys with different morphologies, created using the same growth time, have been observed by controlling the gaseous MoO3precursor on substrates placed in regions with different temperatures. TEM observations clearly reveal that the as-synthesized monolayer MoS2(1-x)Se2xalloy is crystalline, with a hexagonal structure. XPS, Raman mapping, and EDS mapping clearly show the homogeneous substitution of ∼2 atomic weight % Se through the whole crystal. Compared with a pristine CVD-grown monolayer of MoS2, the optical band gap differs by 4.52%, from 1.77 eV to 1.69 eV. Additionally, back-gated transistors fabricated on the monolayer MoS2(1-x)Se2xalloy exhibit n-type behavior at a current on/off ratio of ∼104and a high mobility value of 8.4 cm2V-1s-1.
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 440-746, Korea. leesj@skku.edu.
authors.forename: Sima
authors.initials: S
authors.lastname: Umrao
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 440-746, Korea. leesj@skku.edu.
authors.forename: Jaeho
authors.initials: J
authors.lastname: Jeon
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 440-746, Korea. leesj@skku.edu.
authors.forename: Su Min
authors.initials: SM
authors.lastname: Jeon
authors.affiliation: Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 143-747, Korea.
authors.forename: Young Jin
authors.initials: YJ
authors.lastname: Choi
authors.affiliation: SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SSKU), Suwon 440-746, Korea. leesj@skku.edu and School of Electronics and Electric Engineering, Sungkyunkwan University (SKKU), Suwon 440-746, Korea.
authors.forename: Sungjoo
authors.initials: S
authors.lastname: Lee