title: Two different phase-change origins with chemical- and structural-phase-changes in C doped (1.5 wt.%) In3Sb1Te2.
abstract: We fabricated C-doped (1.5 wt.%) In3Sb1Te2(CIST) thin films with amorphous phase (a-CIST) using a sputter method. Two electrical-phase-changes at 250 and 275 °C were observed in the sheet resistance measurement. In order to understand the origin of these electrical-phase-changes, all samples were characterized by XRD, TEM, and HRXPS with synchrotron radiation. In a-CIST, only weak Sb-C bonding was observed. In the first electrical-phase-change at 250 °C, strong Sb-C bonding occurred without an accompanying structural/phase change (still amorphous). On the other hand, the second electrical-phase-change at 275 °C was due to the structural/phase change from amorphous to crystalline without a chemical state change.
authors.affiliation: Beamline Department, Pohang Accelerator Laboratory (PAL), Pohang, 37673, Republic of Korea.
authors.forename: Y M
authors.initials: YM
authors.lastname: Lee
authors.affiliation: Beamline Department, Pohang Accelerator Laboratory (PAL), Pohang, 37673, Republic of Korea.
authors.forename: S Y
authors.initials: SY
authors.lastname: Lee
authors.affiliation: Biology Resources Section, Research Support Division, Okinawa Institute of Science and Technology Graduate University, Okinawa, 904-0495, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Sasaki
authors.affiliation: AE Center, Samsung Advanced Institute of Technology, P. O. Box 111, Suwon, 440-600, Korea.
authors.forename: K
authors.initials: K
authors.lastname: Kim
authors.affiliation: Beamline Department, Pohang Accelerator Laboratory (PAL), Pohang, 37673, Republic of Korea.
authors.forename: D
authors.initials: D
authors.lastname: Ahn
authors.affiliation: Laboratroy for Organic Electronics, Graduate School of Materials Science, Nara Institute of Science and Technology, Nara, 630-0192, Japan.
authors.forename: M-C
authors.initials: MC
authors.lastname: Jung