title: Impurity Compensation Effect Induced by Tin Valence Change in α-Ga1.4Sn0.6O3Thin Films.
abstract: Corundum-structured α-phase Ga1.4Sn0.6O3thin films have been deposited on m-plane Al2O3(300) substrates using laser molecular beam epitaxy technology. With increasing of the oxygen partial pressure, the crystal lattice of Ga1.4Sn0.6O3films expands due to tin ions valence changes from Sn4+to Sn2+. The resistivity of the film deposited under 3 × 10-5Pa is 3.54 × 104Ω·cm, which decreases by about 2 orders of magnitude than that fabricated under 3 × 10-1Pa. The mixture valence of Sn2+and Sn4+ions leads to the impurity altitude compensation effect. The deep ultraviolet photodetector based on α-phase Ga1.4Sn0.6O3thin films was fabricated. With the oxygen partial pressure reducing gradually, the dark current and the photocurrent increase, and the relaxation time constants diminish, respectively.
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.|State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Xiaolong
authors.identifier: 0000-0001-8961-898X
authors.initials: X
authors.lastname: Zhao
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.|State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Zhenping
authors.initials: Z
authors.lastname: Wu
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Cui
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Yusong
authors.initials: Y
authors.lastname: Zhi
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Daoyou
authors.initials: D
authors.lastname: Guo
authors.affiliation: Department of Physics, The State University of New York at Potsdam , Potsdam, New York 13676-2294, United States.
authors.forename: Linghong
authors.initials: L
authors.lastname: Li
authors.affiliation: Laboratory of Optoelectronics Materials and Devices, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, China.|State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications , Beijing 100876, China.
authors.forename: Weihua
authors.initials: W
authors.lastname: Tang
keywords: corundum-structured; oxygen partial pressure; photodetector; resistivity; valence; α-phase