title: Quantum transport localization through graphene.
abstract: Localization of atomic defect-induced electronic transport through a single graphene layer is calculated using a full-valence electronic structure description as a function of the defect density and taking into account the atomic-scale deformations of the layer. The elementary electronic destructive interferences leading to Anderson localization are analyzed. The low-voltage current intensity decreases with increasing length and defect density, with a calculated localization length ζ = 3.5 nm for a defect density of 5%. The difference from the experimental defect density of 0.5% required for an oxide surface-supported graphene to obtain the same ζ is discussed, pointing out how interactions of the graphene supporting surface and surface chemical modifications also control electronic transport localization.
authors.affiliation: WPI-MANA, National Institute for Material Sciences, 1-1 Namiki, Tsukuba, Ibaraki, Japan.
authors.forename: Saurabh
authors.initials: S
authors.lastname: Srivastava
authors.forename: Hiori
authors.initials: H
authors.lastname: Kino
authors.forename: Shu
authors.initials: S
authors.lastname: Nakaharai
authors.forename: Elisseos
authors.initials: E
authors.lastname: Verveniotis
authors.forename: Yuji
authors.initials: Y
authors.lastname: Okawa
authors.forename: Shinichi
authors.initials: S
authors.lastname: Ogawa
authors.forename: Christian
authors.initials: C
authors.lastname: Joachim
authors.forename: Masakazu
authors.initials: M
authors.lastname: Aono