title: Achieving ZT=2.2 with Bi-doped n-type SnSe single crystals.
abstract: Recently SnSe, a layered chalcogenide material, has attracted a great deal of attention for its excellent p-type thermoelectric property showing a remarkable ZT value of 2.6 at 923 K. For thermoelectric device applications, it is necessary to have n-type materials with comparable ZT value. Here, we report that n-type SnSe single crystals were successfully synthesized by substituting Bi at Sn sites. In addition, it was found that the carrier concentration increases with Bi content, which has a great influence on the thermoelectric properties of n-type SnSe single crystals. Indeed, we achieved the maximum ZT value of 2.2 along b axis at 733 K in the most highly doped n-type SnSe with a carrier density of -2.1 × 1019cm-3at 773 K.
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Anh Tuan
authors.initials: AT
authors.lastname: Duong
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Van Quang
authors.initials: VQ
authors.lastname: Nguyen
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Ganbat
authors.initials: G
authors.lastname: Duvjir
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Van Thiet
authors.initials: VT
authors.lastname: Duong
authors.affiliation: Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Republic of Korea.
authors.forename: Suyong
authors.initials: S
authors.lastname: Kwon
authors.affiliation: Division of Industrial Metrology, Korea Research Institute of Standards and Science (KRISS), Daejeon 305-340, Republic of Korea.
authors.forename: Jae Yong
authors.initials: JY
authors.lastname: Song
authors.affiliation: Thermoelectric Conversion Research Center, Creative and Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea.
authors.forename: Jae Ki
authors.initials: JK
authors.lastname: Lee
authors.affiliation: Thermoelectric Conversion Research Center, Creative and Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea.
authors.forename: Ji Eun
authors.initials: JE
authors.lastname: Lee
authors.affiliation: Thermoelectric Conversion Research Center, Creative and Fundamental Research Division, Korea Electrotechnology Research Institute (KERI), Changwon 51543, Republic of Korea.
authors.forename: SuDong
authors.initials: S
authors.lastname: Park
authors.affiliation: Department of Physics, Pusan National University, Busan 605-735, Republic of Korea.
authors.forename: Taewon
authors.initials: T
authors.lastname: Min
authors.affiliation: Department of Physics, Pusan National University, Busan 605-735, Republic of Korea.
authors.forename: Jaekwang
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Jungdae
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan 680-749, Republic of Korea.
authors.forename: Sunglae
authors.initials: S
authors.lastname: Cho