title: Radiation Induced Enhancement of Hydrogen Influence on Luminescent Properties of nc-Si/SiO2Structures.
abstract: Using photo-luminescence, infrared spectroscopy, and electron spin resonance technique, the silicon dioxide films with embedded silicon nanocrystals (nc-Si/SiO2structures) have been investigated after γ-irradiation with the dose 2 × 107rad and subsequent annealing at 450 °C in hydrogen ambient. For the first time, it was shown that such a radiation-thermal treatment results in significant increase of the luminescence intensity, in a red shift of the photoluminescence spectra, and in disappearance of the electron-spin resonance signal related to silicon broken bonds. This effect has been explained by passivation of silicon broken bonds at the nc-Si-SiO2interface with hydrogen and by generation of new luminescence centers, these centers being created at elevated temperatures due to transformation of radiation-induced defects.
authors.affiliation: V.Ye. Laskarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prosp. Nauki 41, Kyiv, 03028, Ukraine. lisovsky@isp.kiev.ua.
authors.forename: Igor
authors.initials: I
authors.lastname: Lisovskyy
authors.affiliation: V.Ye. Laskarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prosp. Nauki 41, Kyiv, 03028, Ukraine.
authors.forename: Mariia
authors.initials: M
authors.lastname: Voitovych
authors.affiliation: V.Ye. Laskarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prosp. Nauki 41, Kyiv, 03028, Ukraine.
authors.forename: Volodymyr
authors.initials: V
authors.lastname: Litovchenko
authors.affiliation: Institute of Physics, National Academy of Sciences of Ukraine, prosp. Nauki 46, Kyiv, 03028, Ukraine.
authors.forename: Vasyl
authors.initials: V
authors.lastname: Voitovych
authors.affiliation: V.Ye. Laskarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prosp. Nauki 41, Kyiv, 03028, Ukraine.
authors.forename: Iurii
authors.initials: I
authors.lastname: Nasieka
authors.affiliation: V.Ye. Laskarev Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, prosp. Nauki 41, Kyiv, 03028, Ukraine.
authors.forename: Viktor
authors.initials: V
authors.lastname: Bratus
keywords: Electron-spin resonance; Infrared spectroscopy; Photoluminescence; Radiation defects; Si nanocrystals; SiO2 films; γ-irradiation