title: Foldable and Disposable Memory on Paper.
abstract: Foldable organic memory on cellulose nanofibril paper with bendable and rollable characteristics is demonstrated by employing initiated chemical vapor deposition (iCVD) for polymerization of the resistive switching layer and inkjet printing of the electrode, where iCVD based on all-dry and room temperature process is very suitable for paper electronics. This memory exhibits a low operation voltage of 1.5 V enabling battery operation compared to previous reports and wide memory window. The memory performance is maintained after folding tests, showing high endurance. Furthermore, the quick and complete disposable nature demonstrated here is attractive for security applications. This work provides an effective platform for green, foldable and disposable electronics based on low cost and versatile materials.
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.|Department of Memory Business, Samsung Electronics, San #16 Banwol-Dong, Hwasung-City, Gyeonggi-Do 445-701, Republic of Korea.
authors.forename: Byung-Hyun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
authors.forename: Dong-Il
authors.initials: DI
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
authors.forename: Hagyoul
authors.initials: H
authors.lastname: Bae
authors.affiliation: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.|Graphene Research Center, KI for Nanocentury, KAIST, Daejeon 34141, South Korea.
authors.forename: Hyejeong
authors.initials: H
authors.lastname: Seong
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
authors.forename: Seung-Bae
authors.initials: SB
authors.lastname: Jeon
authors.affiliation: Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.
authors.forename: Myung-Lok
authors.initials: ML
authors.lastname: Seol
authors.affiliation: Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Han
authors.affiliation: Center for Nanotechnology, NASA Ames Research Center, Moffett Field, CA 94035, USA.
authors.forename: M
authors.initials: M
authors.lastname: Meyyappan
authors.affiliation: Department of Chemical and Biomolecular Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291 Daehak-ro, Yuseong-gu, Daejeon 305-701, Republic of Korea.|Graphene Research Center, KI for Nanocentury, KAIST, Daejeon 34141, South Korea.
authors.forename: Sung-Gap
authors.initials: SG
authors.lastname: Im
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon 34141, South Korea.
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi