title: Surface defects generated by extrinsic origins on 4H-SiC epitaxial-wafers observed by scanning electron microscopy.
abstract: Surface defects on 4H-SiC wafers with an epitaxial layer grown by chemical vapor deposition (CVD) were observed using scanning electron microscopy (SEM). Commercially available epitaxial-wafers with four or eight deg-off surface from the [0001] toward the [112¯0] directions were used for this experiment. 3C-SiC particles, triangular-defects, comets, obtuse-triangular-shaped-defects and micro-holes were identified in the SEM images. This paper can be considered as a catalog of SEM images and descriptions of various surface defects for 4H-SiC wafers with a CVD-grown epilayer.
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Present address: Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Hirofumi
authors.initials: H
authors.lastname: Matsuhata
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan.
authors.forename: Naoyuki
authors.initials: N
authors.lastname: Sugiyama
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.|Present address: Center for Physical Biology, California Institute of Technology, MC127-72 Pasadena CA 91125, USA.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Showa Denko K.K., 1-13-9 Shibadaimon, Minatoku, Tokyo 105-8518, Japan.
authors.forename: Tamotsu
authors.initials: T
authors.lastname: Yamashita
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Research and Development Center, Toshiba Corporation, 1 Toshiba-cho, Komukai, Saiwai-ku, Kawasaki 212-8582, Japan.
authors.forename: Tetsuo
authors.initials: T
authors.lastname: Hatakeyama
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Sekiguchi
keywords: 4H-SiC; CVD growth; epitaxial growth; scanning electron microscopy; surface defects; wafers