title: Plasma-Induced Nonvolatile Resistive Switching with Extremely Low SET Voltage in TiOxFywith AgF Nanoparticles.
abstract: Low power consumption is crucial for the application of resistive random access memory. In this work, we present the bipolar resistive switching in an Ag/TiOxFy/Ti/Pt stack with extremely low switch-on voltage of 0.07 V. Operating current as low as 10 nA was also obtained by conductive atomic force microscopy. The highly defective TiOxFylayer was fabricated by plasma treatment using helium, oxygen, and carbon tetrafluoride orderly. During the electroforming process, AgF nanoparticles were formed due to the diffusion of Ag+which reacted with the adsorbed F-in the TiOxFylayer. These nanoparticles are of great importance to resistive switching performance because they are believed to be conductive phases and become part of the conducting path when the sample is switched to a low-resistance state.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Xiangyu
authors.initials: X
authors.lastname: Sun
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Chuangui
authors.initials: C
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Yao
authors.initials: Y
authors.lastname: Shuai
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Pan
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Wenbo
authors.initials: W
authors.lastname: Luo
authors.affiliation: Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.
authors.forename: Tiangui
authors.initials: T
authors.lastname: You
authors.affiliation: Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.
authors.forename: Agnieszka
authors.initials: A
authors.lastname: Bogusz
authors.affiliation: Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.
authors.forename: Nan
authors.initials: N
authors.lastname: Du
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, P.R. China.
authors.forename: Yanrong
authors.initials: Y
authors.lastname: Li
authors.affiliation: Material Systems for Nanoelectronics, Technische Universität Chemnitz , Chemnitz 09126, Germany.
authors.forename: Heidemarie
authors.initials: H
authors.lastname: Schmidt
keywords: bipolar resistive switching; low operating voltage; low power consumption; nanoparticle; plasma treatment