title: Physically Transient Memory on a Rapidly Dissoluble Paper for Security Application.
abstract: We report the transient memory device by means of a water soluble SSG (solid sodium with glycerine) paper. This material has a hydroscopic property hence it can be soluble in water. In terms of physical security of memory devices, prompt abrogation of a memory device which stored a large number of data is crucial when it is stolen because all of things have identified information in the memory device. By utilizing the SSG paper as a substrate, we fabricated a disposable resistive random access memory (RRAM) which has good data retention of longer than 106seconds and cycling endurance of 300 cycles. This memory device is dissolved within 10 seconds thus it can never be recovered or replicated. By employing direct printing but not lithography technology to aim low cost and disposable applications, the memory capacity tends to be limited less than kilo-bits. However, unlike high memory capacity demand for consumer electronics, the proposed device is targeting for security applications. With this regards, the sub-kilobit memory capacity should find the applications such as one-time usable personal identification, authentication code storage, cryptography key, and smart delivery tag. This aspect is attractive for security and protection system against unauthorized accessibility.
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Hagyoul
authors.initials: H
authors.lastname: Bae
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Byung-Hyun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Dongil
authors.initials: D
authors.lastname: Lee
authors.affiliation: Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, United States.
authors.forename: Myeong-Lok
authors.initials: ML
authors.lastname: Seol
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Daewon
authors.initials: D
authors.lastname: Kim
authors.affiliation: Center for Nanotechnology, NASA Ames Research Center, Moffett Field, California 94035, United States.
authors.forename: Jin-Woo
authors.initials: JW
authors.lastname: Han
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Choong-Ki
authors.initials: CK
authors.lastname: Kim
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Seung-Bae
authors.initials: SB
authors.lastname: Jeon
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Daechul
authors.initials: D
authors.lastname: Ahn
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Sang-Jae
authors.initials: SJ
authors.lastname: Park
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Jun-Young
authors.initials: JY
authors.lastname: Park
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology, (KAIST) 291 Daehak-ro, Yuseong-gu, Daejeon, 34141, South Korea.
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi