title: Pressurizing Field-Effect Transistors of Few-Layer MoS2in a Diamond Anvil Cell.
abstract: Hydrostatic pressure applied using diamond anvil cells (DAC) has been widely explored to modulate physical properties of materials by tuning their lattice degree of freedom. Independently, electrical field is able to tune the electronic degree of freedom of functional materials via, for example, the field-effect transistor (FET) configuration. Combining these two orthogonal approaches would allow discovery of new physical properties and phases going beyond the known phase space. Such experiments are, however, technically challenging and have not been demonstrated. Herein, we report a feasible strategy to prepare and measure FETs in a DAC by lithographically patterning the nanodevices onto the diamond culet. Multiple-terminal FETs were fabricated in the DAC using few-layer MoS2and BN as the channel semiconductor and dielectric layer, respectively. It is found that the mobility, conductance, carrier concentration, and contact conductance of MoS2can all be significantly enhanced with pressure. We expect that the approach could enable unprecedented ways to explore new phases and properties of materials under coupled mechano-electrostatic modulation.
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Yabin
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Center for High Pressure Science and Technology Advanced Research , Shanghai 201203, China.
authors.forename: Feng
authors.initials: F
authors.lastname: Ke
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Penghong
authors.initials: P
authors.lastname: Ci
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Changhyun
authors.initials: C
authors.lastname: Ko
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Taegyun
authors.identifier: 0000-0002-1138-8747
authors.initials: T
authors.lastname: Park
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Sahar
authors.initials: S
authors.lastname: Saremi
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Huili
authors.initials: H
authors.lastname: Liu
authors.affiliation: Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Yeonbae
authors.initials: Y
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Joonki
authors.initials: J
authors.lastname: Suh
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.
authors.forename: Lane W
authors.initials: LW
authors.lastname: Martin
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Joel W
authors.initials: JW
authors.lastname: Ager
authors.affiliation: Center for High Pressure Science and Technology Advanced Research , Shanghai 201203, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States.|Materials Sciences Division, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States.
authors.forename: Junqiao
authors.identifier: 0000-0002-1498-0148
authors.initials: J
authors.lastname: Wu
keywords: Hydrostatic pressure; MoS2; diamond anvil cell; field-effect transistor; h-BN dielectric