title: Influence of laser power on atom probe tomographic analysis of boron distribution in silicon.
abstract: The relationship between the laser power and the three-dimensional distribution of boron (B) in silicon (Si) measured by laser-assisted atom probe tomography (APT) is investigated. The ultraviolet laser employed in this study has a fixed wavelength of 355nm. The measured distributions are almost uniform and homogeneous when using low laser power, while clear B accumulation at the low-index pole of single-crystalline Si and segregation along the grain boundaries in polycrystalline Si are observed when using high laser power (100pJ). These effects are thought to be caused by the surface migration of atoms, which is promoted by high laser power. Therefore, for ensuring a high-fidelity APT measurement of the B distribution in Si, high laser power is not recommended.
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan. Electronic address: ytu@imr.tohoku.ac.jp.
authors.forename: Y
authors.initials: Y
authors.lastname: Tu
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: H
authors.initials: H
authors.lastname: Takamizawa
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: B
authors.initials: B
authors.lastname: Han
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Shimizu
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: K
authors.initials: K
authors.lastname: Inoue
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: T
authors.initials: T
authors.lastname: Toyama
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan; Tokyo City University, Setagaya, Tokyo 158-8557, Japan.
authors.forename: F
authors.initials: F
authors.lastname: Yano
authors.affiliation: Renesas Electronics Corporation, Hitachinaka, Ibaraki 312-8504, Japan.
authors.forename: A
authors.initials: A
authors.lastname: Nishida
authors.affiliation: The Oarai Center, Institute for Materials Research, Tohoku University, Oarai, Ibaraki 311-1313, Japan.
authors.forename: Y
authors.initials: Y
authors.lastname: Nagai
keywords: Atom probe tomography; Dopant distribution; Laser power; Surface migration