title: THz Pulse Detection by Multilayered GeTe/Sb2Te3.
abstract: We proposed and demonstrated terahertz (THz) pulse detection by means of multilayered GeTe/Sb2Te3phase-change memory materials that are also known as a multilayer topological insulator-normal insulator (MTN) system. THz time-domain spectroscopy measurement was performed for MTN films with different multilayer repetitions as well as a conventional as-grown Ge-Te-Sb (GST) alloy film. It was found that MTNs absorb THz waves and that the absorption coefficient depends on the number of layers, while the as-grown GST alloy film was almost transparent for THz waves. Simple MTN-based THz detection devices were fabricated, and the THz-induced change in the current signal was measured when a DC bias voltage was applied between the electrodes. We confirmed that irradiation of THz pulse causes a decrease in the resistance of the MTNs. This result indicates that our devices are capable of THz detection.
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan.
authors.forename: Kotaro
authors.initials: K
authors.lastname: Makino
authors.affiliation: Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan.
authors.forename: Shota
authors.initials: S
authors.lastname: Kuromiya
authors.affiliation: Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan.
authors.forename: Keisuke
authors.initials: K
authors.lastname: Takano
authors.affiliation: Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan.
authors.forename: Kosaku
authors.initials: K
authors.lastname: Kato
authors.affiliation: Institute of Laser Engineering, Osaka University , Suita, Osaka 565-0871, Japan.
authors.forename: Makoto
authors.initials: M
authors.lastname: Nakajima
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan.
authors.forename: Yuta
authors.initials: Y
authors.lastname: Saito
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan.
authors.forename: Junji
authors.initials: J
authors.lastname: Tominaga
authors.affiliation: National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8563, Japan.
authors.forename: Hitoshi
authors.initials: H
authors.lastname: Iida
authors.affiliation: National Metrology Institute of Japan, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8563, Japan.
authors.forename: Moto
authors.initials: M
authors.lastname: Kinoshita
authors.affiliation: Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Nakano
keywords: THz detection; THz spectroscopy; chalcogenide superlattice; multilayer system; phase change material; topological insulator