title: Realizing a facile and environmental-friendly fabrication of high-performance multi-crystalline silicon solar cells by employing ZnO nanostructures and an Al2O3passivation layer.
abstract: Nowadays, the multi-crystalline silicon (mc-Si) solar cells dominate the photovoltaic industry. However, the current acid etching method on mc-Si surface used by firms can hardly suppress the average reflectance value below 25% in the visible light spectrum. Meanwhile, the nitric acid and the hydrofluoric contained in the etching solution is both environmental unfriendly and highly toxic to human. Here, a mc-Si solar cell based on ZnO nanostructures and an Al2O3spacer layer is demonstrated. The eco-friendly fabrication is realized by low temperature atomic layer deposition of Al2O3layer as well as ZnO seed layer. Moreover, the ZnO nanostructures are prepared by nontoxic and low cost hydro-thermal growth process. Results show that the best passivation quality of the n+-type mc-Si surface can be achieved by balancing the Si dangling bond saturation level and the negative charge concentration in the Al2O3film. Moreover, the average reflectance on cell surface can be suppressed to 8.2% in 400-900 nm range by controlling the thickness of ZnO seed layer. With these two combined refinements, a maximum solar cell efficiency of 15.8% is obtained eventually. This work offer a facile way to realize the environmental friendly fabrication of high performance mc-Si solar cells.
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Hong-Yan
authors.initials: HY
authors.lastname: Chen
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.|State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, China.
authors.forename: Hong-Liang
authors.initials: HL
authors.lastname: Lu
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Long
authors.initials: L
authors.lastname: Sun
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Qing-Hua
authors.initials: QH
authors.lastname: Ren
authors.affiliation: Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Xin-Ming
authors.initials: XM
authors.lastname: Ji
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Wen-Jun
authors.initials: WJ
authors.lastname: Liu
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Shi-Jin
authors.initials: SJ
authors.lastname: Ding
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: Xiao-Feng
authors.initials: XF
authors.lastname: Yang
authors.affiliation: State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai 200433, China.
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang