title: Metal Induced Growth of Transition Metal Dichalcogenides at Controlled Locations.
abstract: Metal induced nucleation is adopted to achieve the growth of transition metal dichalcogenides at controlled locations. Ordered arrays of MoS2and WS2have successfully been fabricated on SiO2substrates by using the patterned Pt/Ti dots as the nucleation sites. Uniform MoS2monolayers with the adjustable size up to 50 μm are grown surrounding these metal patterns and the mobility of such layer is about 0.86 cm2/V·s. The crystalline flakes of WS2are also fabricated extending from the metal patterns and the electron mobility of these flakes is up to 11.36 cm2/V·s.
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, China.
authors.forename: Zhendong
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Bejing 100871, China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Huang
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Chen
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, China.
authors.forename: Shouhui
authors.initials: S
authors.lastname: Guo
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, China.
authors.forename: Xiaoqing
authors.initials: X
authors.lastname: Liu
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Bejing 100871, China.
authors.forename: Xuelei
authors.initials: X
authors.lastname: Liang
authors.affiliation: Department of Physics, Nanchang University, Nanchang 330031, China.|Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University, Nanchang 330031, China.
authors.forename: Li
authors.initials: L
authors.lastname: Wang