title: Interface Structure, Band Alignment, and Built-In Potentials at LaFeO_{3}/n-SrTiO_{3} Heterojunctions.
abstract: Interface structure at polar-nonpolar interfaces has been shown to be a key factor in controlling emergent behavior in oxide heterostructures, including the LaFeO_{3}/n-SrTiO_{3} system. We demonstrate via high-energy-resolution x-ray photoemission that epitaxial LaFeO_{3}/n-SrTiO_{3}(001) heterojunctions engineered to have opposite interface polarities exhibit very similar band offsets and potential gradients within the LaFeO_{3} films. However, differences in the potential gradient within the SrTiO_{3} layer depending on polarity may promote hole diffusion into LaFeO_{3} for applications in photocatalysis.
authors.affiliation: Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA.|Department of Physics, Auburn University, Auburn, Alabama 36849, USA.
authors.forename: Ryan
authors.initials: R
authors.lastname: Comes
authors.affiliation: Physical and Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, USA.
authors.forename: Scott
authors.initials: S
authors.lastname: Chambers