title: Passivation and characterization of charge defects in ambipolar silicon quantum dots.
abstract: In this Report we show the role of charge defects in the context of the formation of electrostatically defined quantum dots. We introduce a barrier array structure to probe defects at multiple locations in a single device. We measure samples both before and after an annealing process which uses an Al2O3overlayer, grown by atomic layer deposition. After passivation of the majority of charge defects with annealing we can electrostatically define hole quantum dots up to 180 nm in length. Our ambipolar structures reveal amphoteric charge defects that remain after annealing with charging energies of 10 meV in both the positive and negative charge state.
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede The Netherlands.
authors.forename: Paul C
authors.initials: PC
authors.lastname: Spruijtenburg
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede The Netherlands.
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Amitonov
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede The Netherlands.
authors.forename: Filipp
authors.initials: F
authors.lastname: Mueller
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede The Netherlands.
authors.forename: Wilfred G
authors.initials: WG
authors.lastname: van der Wiel
authors.affiliation: NanoElectronics Group, MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500 AE Enschede The Netherlands.
authors.forename: Floris A
authors.initials: FA
authors.lastname: Zwanenburg