title: Surface defects generated by intrinsic origins on 4H-SiC epitaxial wafers observed by scanning electron microscopy.
abstract: Surface defects with intrinsic origins in an epitaxial layer on 4H-SiC wafers were observed by scanning electron microscopy. Commercially available 4H-SiC epitaxial wafers with 4° or 8° off-axis angles from the [0001] direction toward the [112¯0] direction were used in this experiment. Various types of defects, including micropipes, pits, carrots, stacking faults and wide terrace and high step structures, were observed and clearly identified. The defects are presented as a catalog that can be used in the identification of surface defects.
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Present address: Institute of Engineering Innovation, The University of Tokyo, 2-11-16 Yayoi, Bunkyo-ku, Tokyo 113-8656, Japan.
authors.forename: Hirofumi
authors.initials: H
authors.lastname: Matsuhata
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Toray Research Center, Inc., 3-3-7 Sonoyama, Otsu, Shiga 520-8567, Japan.
authors.forename: Naoyuki
authors.initials: N
authors.lastname: Sugiyama
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|International Center for Materials Nanoarchitectoronics, National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan.|Present address: Center for Physical Biology, California Institute of Technology, MC127-72 Pasadena CA 91125, USA.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Showa Denko K.K., 1-13-9 Shibadaimon, Minatoku, Tokyo 105-8518, Japan.
authors.forename: Tamotsu
authors.initials: T
authors.lastname: Yamashita
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|Research and Development Center, Toshiba Corporation, 1 Toshiba-cho, Komukai, Saiwai-ku, Kawasaki 212-8582, Japan.
authors.forename: Tetsuo
authors.initials: T
authors.lastname: Hatakeyama
authors.affiliation: R & D Partnership for Future Power Electronics, National Institute of Advanced Industrial Science and Technology, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan.|International Center for Materials Nanoarchitectoronics, National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Sekiguchi
keywords: 4H-SiC; dislocations; epitaxial growth; scanning electron microscopy; stacking faults; surface defects