title: A room-temperature magnetic semiconductor from a ferromagnetic metallic glass.
abstract: Emerging for future spintronic/electronic applications, magnetic semiconductors have stimulated intense interest due to their promises for new functionalities and device concepts. So far, the so-called diluted magnetic semiconductors attract many attentions, yet it remains challenging to increase their Curie temperatures above room temperature, particularly those based on III-V semiconductors. In contrast to the concept of doping magnetic elements into conventional semiconductors to make diluted magnetic semiconductors, here we propose to oxidize originally ferromagnetic metals/alloys to form new species of magnetic semiconductors. We introduce oxygen into a ferromagnetic metallic glass to form a Co28.6Fe12.4Ta4.3B8.7O46magnetic semiconductor with a Curie temperature above 600 K. The demonstration of p-n heterojunctions and electric field control of the room-temperature ferromagnetism in this material reflects its p-type semiconducting character, with a mobility of 0.1 cm2V-1s-1. Our findings may pave a new way to realize high Curie temperature magnetic semiconductors with unusual multifunctionalities.
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Wenjian
authors.initials: W
authors.lastname: Liu
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Hongxia
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS, Beijing 100190, China.
authors.forename: Jin-An
authors.initials: JA
authors.lastname: Shi
authors.affiliation: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan.
authors.forename: Zhongchang
authors.initials: Z
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Cheng
authors.identifier: http://orcid.org/0000-0002-7651-9031
authors.initials: C
authors.lastname: Song
authors.affiliation: Physics Department, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong 999077, China.|HKUST Shenzhen Research Institute, Shenzhen 518057, China.
authors.forename: Xiangrong
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Siyuan
authors.initials: S
authors.lastname: Lu
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Xiangjun
authors.initials: X
authors.lastname: Zhou
authors.affiliation: Beijing Laboratory for Electron Microscopy, Institute of Physics, CAS, Beijing 100190, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gu
authors.affiliation: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan.
authors.forename: Dmitri V
authors.initials: DV
authors.lastname: Louzguine-Luzgin
authors.affiliation: WPI Advanced Institute for Materials Research (WPI-AIMR), Tohoku University, Sendai 980-8577, Japan.
authors.forename: Mingwei
authors.initials: M
authors.lastname: Chen
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Kefu
authors.initials: K
authors.lastname: Yao
authors.affiliation: School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China.
authors.forename: Na
authors.initials: N
authors.lastname: Chen