title: Temperature Effects in the Band Structure of Topological Insulators.
abstract: We study the effects of temperature on the band structure of the Bi_{2}Se_{3} family of topological insulators using first-principles methods. Increasing temperature drives these materials towards the normal state, with similar contributions from thermal expansion and from electron-phonon coupling. The band gap changes with temperature reach 0.3 eV at 600 K, of similar size to the changes caused by electron correlation. Our results suggest that temperature-induced topological phase transitions should be observable near critical points of other external parameters.
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA.|TCM Group, Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge CB3 0HE, United Kingdom.
authors.forename: Bartomeu
authors.initials: B
authors.lastname: Monserrat
authors.affiliation: Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08854-8019, USA.
authors.forename: David
authors.initials: D
authors.lastname: Vanderbilt