title: Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.
abstract: Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed laser deposition. The influence of pulse width, pulse amplitude and temperature on the fatigue behavior of HYO during field cycling is studied. The temperature dependent conduction mechanism is characterized after different fatigue cycles. Domain wall pinning caused by carrier injection at shallow defect centers is found to be the major fatigue mechanism of this material. The fatigued device can fully recover to the fatigue-free state after being heated at 90 °C for 30 min, confirming the shallow trap characteristic of the domain wall pinning defects.
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Fei
authors.initials: F
authors.lastname: Huang
authors.affiliation: Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China. hetian@zju.edu.cn.
authors.forename: Xing
authors.initials: X
authors.lastname: Chen
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Liang
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Qin
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China and Sichuan Province Key Laboratory of Information Materials and Devices Application, Chengdu University of Information Technology, Chengdu 610225, China.
authors.forename: Taixing
authors.initials: T
authors.lastname: Huang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Zhuo
authors.initials: Z
authors.lastname: Wang
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Peng
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Peiheng
authors.initials: P
authors.lastname: Zhou
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Haipeng
authors.initials: H
authors.lastname: Lu
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Li
authors.initials: L
authors.lastname: Zhang
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Longjiang
authors.initials: L
authors.lastname: Deng
authors.affiliation: Key Laboratory of Microelectronics Device & Integrated Technology, Lab of Nanofabrication and Novel Device Integration, IMECAS, Beijing, China. liuqi@ime.ac.cn.
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
authors.affiliation: Key Laboratory of Microelectronics Device & Integrated Technology, Lab of Nanofabrication and Novel Device Integration, IMECAS, Beijing, China. liuqi@ime.ac.cn.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.affiliation: Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China. hetian@zju.edu.cn.
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.affiliation: National Engineering Research Center of Electromagnetic Radiation Control Materials, University of Electronic Science and Technology of China, Chengdu 610054, China. bilei@uestc.edu.cn and State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China and Key Laboratory of Multi-spectral Absorbing Materials and Structures of Ministry of Education, University of Electronic Science and Technology of China, Chengdu 610054, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Bi