title: Enhanced Ultraviolet Random Lasing from Au/MgO/ZnO Heterostructure by Introducing p-Cu2O Hole-Injection Layer.
abstract: Ultraviolet light-emitting devices (LEDs) were fabricated on the basis of Au/MgO/ZnO metal/insulator/semiconductor (MIS) heterostructures. By introducing a thermally oxidized p-type Cu2O hole-injection layer into this MIS structure, enhanced ultraviolet electroluminescence (EL) and random lasing with reduced threshold injection current are achieved. The enhancement mechanism is attributed to effective hole transfer from p-Cu2O to i-MgO under forward bias, which increases the initial carrier concentration of MgO dielectric layer and further promotes "impact-ionization" effect induced carrier generation and injection. The current study proposes a new and effective route to improve the EL performance of MIS junction LEDs via introducing extrinsic hole suppliers.
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Cen
authors.initials: C
authors.lastname: Zhang
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.|State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
authors.forename: Weizhen
authors.initials: W
authors.lastname: Liu
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Haiyang
authors.initials: H
authors.lastname: Xu
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Shuai
authors.initials: S
authors.lastname: Hou
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Chunliang
authors.initials: C
authors.lastname: Wang
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Liu
authors.initials: L
authors.lastname: Yang
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Zhongqiang
authors.initials: Z
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
authors.forename: Xinhua
authors.initials: X
authors.lastname: Wang
authors.affiliation: Centre for Advanced Optoelectronic Functional Materials Research and Key Laboratory of UV-Emitting Materials and Technology, Ministry of Education, Northeast Normal University , Changchun 130024, China.
authors.forename: Yichun
authors.initials: Y
authors.lastname: Liu
keywords: Au/MgO/ZnO heterostructure; MIS junction; hole-injection layer; p-type Cu2O; ultraviolet random lasing