title: Direct-written polymer field-effect transistors operating at 20 MHz.
abstract: Printed polymer electronics has held for long the promise of revolutionizing technology by delivering distributed, flexible, lightweight and cost-effective applications for wearables, healthcare, diagnostic, automation and portable devices. While impressive progresses have been registered in terms of organic semiconductors mobility, field-effect transistors (FETs), the basic building block of any circuit, are still showing limited speed of operation, thus limiting their real applicability. So far, attempts with organic FETs to achieve the tens of MHz regime, a threshold for many applications comprising the driving of high resolution displays, have relied on the adoption of sophisticated lithographic techniques and/or complex architectures, undermining the whole concept. In this work we demonstrate polymer FETs which can operate up to 20 MHz and are fabricated by means only of scalable printing techniques and direct-writing methods with a completely mask-less procedure. This is achieved by combining a fs-laser process for the sintering of high resolution metal electrodes, thus easily achieving micron-scale channels with reduced parasitism down to 0.19 pF mm-1, and a large area coating technique of a high mobility polymer semiconductor, according to a simple and scalable process flow.
authors.affiliation: Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, Milano, Italy.|Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, Milano, Italy.
authors.forename: Andrea
authors.initials: A
authors.lastname: Perinot
authors.affiliation: Center for Biomolecular Nanotechnologies@UniLe, Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce, Italy.
authors.forename: Prakash
authors.initials: P
authors.lastname: Kshirsagar
authors.affiliation: Center for Biomolecular Nanotechnologies@UniLe, Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce, Italy.
authors.forename: Maria Ada
authors.initials: MA
authors.lastname: Malvindi
authors.affiliation: Center for Biomolecular Nanotechnologies@UniLe, Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce, Italy.|Istituto Italiano di Tecnologia, Via Morego 30, 16163 Genova, Italy.
authors.forename: Pier Paolo
authors.initials: PP
authors.lastname: Pompa
authors.affiliation: Center for Biomolecular Nanotechnologies@UniLe, Istituto Italiano di Tecnologia, Via Barsanti, 73010 Arnesano, Lecce, Italy.
authors.forename: Roberto
authors.initials: R
authors.lastname: Fiammengo
authors.affiliation: Center for Nano Science and Technology@PoliMi, Istituto Italiano di Tecnologia, via Giovanni Pascoli 70/3, Milano, Italy.
authors.forename: Mario
authors.initials: M
authors.lastname: Caironi