title: Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction.
abstract: In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr= 68 μs, τf= 78 μs) and good reproducibility in a wide range of switching frequencies (50-5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW-1and 4.87 × 1010cm Hz1/2W-1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems.
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Teng-Fei
authors.initials: TF
authors.lastname: Zhang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Zhi-Peng
authors.initials: ZP
authors.lastname: Li
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Jiu-Zhen
authors.initials: JZ
authors.lastname: Wang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Wei-Yu
authors.initials: WY
authors.lastname: Kong
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Guo-An
authors.initials: GA
authors.lastname: Wu
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Yu-Zhen
authors.initials: YZ
authors.lastname: Zheng
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Yuan-Wei
authors.initials: YW
authors.lastname: Zhao
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: En-Xu
authors.initials: EX
authors.lastname: Yao
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Nai-Xi
authors.initials: NX
authors.lastname: Zhuang
authors.affiliation: School of Electronic Science and Applied Physics, Hefei University of Technology, Hefei, Anhui 230009, P. R. China.
authors.forename: Lin-Bao
authors.initials: LB
authors.lastname: Luo