title: Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices.
abstract: Metal oxide-based electrochemical metallization memory (ECM) shows promising performance for next generation non-volatile memory. The negative-SET behavior has been observed in various oxide-based ECM devices. But the underlying mechanism of this behavior remains unaddressed and the role of the metal cation and oxygen vacancy in this behavior is unclear. In this work, we have observed two kinds of negative-SET (labeled as N-SET1 and N-SET2) behaviors in our Cu/ZrO2/Pt devices. Both the two behaviors can result in hard breakdown due to the high compliance current in reset process. The I-V characteristic shows that the two negative-SET behaviors have an obvious difference in operation voltage. Using four-probe resistance measurement method, the resistance-temperature characteristics of the ON-state after various negative-SET behaviors have been studied. The temperature dependence results demonstrate that the N-SET1 behavior is dominated by Cu conductive filament (CF) reformation caused by the Cu CF overgrowth phenomenon while the N-SET2 is related to the formation of oxygen vacancy CF. This work may provide a comprehensive understanding of the switching mechanism in oxide-based ECM devices.
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.|Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Sen
authors.initials: S
authors.lastname: Liu
authors.affiliation: Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Xiaolong
authors.initials: X
authors.lastname: Zhao
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.
authors.forename: Qingjiang
authors.initials: Q
authors.lastname: Li
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.
authors.forename: Nan
authors.initials: N
authors.lastname: Li
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China.|Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Wang
authors.affiliation: Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China. liuqi@ime.ac.cn.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.affiliation: College of Electronic Science and Engineering, National University of Defense Technology, Changsha, 410073, China. xuhui@nudt.edu.cn.
authors.forename: Hui
authors.initials: H
authors.lastname: Xu
keywords: Conductive filament; Electrochemical metallization memory; Oxygen vacancy; Resistive switching; Temperature dependence