title: Ultrathin Single-Crystalline Boron Nanosheets for Enhanced Electro-Optical Performances.
abstract: Large-scale single-crystalline ultrathin boron nanosheets (UBNSs, ≈10 nm) are fabricated through an effective vapor-solid process via thermal decomposition of diborane. The UBNSs have obvious advantages over thicker boron nanomaterials in many aspects. Specifically, the UBNSs demonstrate excellent field emission performances with a low turn-on field,Eto, of 3.60 V μm-1and a good stability. Further, the dependence of (turn-on field)Eto/(threshold field)Ethrand effective work function,Φe, on temperature is investigated and the possible mechanism of temperature-dependent field emission phenomenon has been discussed. Moreover, electronic transport in a single UBNS reveals it to be an intrinsic p-type semiconductor behavior with carrier mobility about 1.26 × 10-1cm2V-1s-1, which is the best data in reported works. Interestingly, a multiconductive mechanism coexisting phenomenon has been explored based on the study of temperature-dependent conductivity behavior of the UBNSs. Besides, the photodetector device fabricated from single-crystalline UBNS demonstrates good sensitivity, reliable stability, and fast response, obviously superior to other reported boron nanomaterials. Such superior electronic-optical performances are originated from the high quality of single crystal and large specific surface area of the UBNSs, suggesting the potential applications of the UBNSs in field-emitters, interconnects, integrated circuits, and optoelectronic devices.
authors.affiliation: State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
authors.forename: Junqi
authors.initials: J
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
authors.forename: Yangyang
authors.initials: Y
authors.lastname: Chang
authors.affiliation: State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gan
authors.affiliation: State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Material Processing and Die and Mould Technology School of Materials Science and Engineering Huazhong University of Science and Technology (HUST) Wuhan 430074 P. R. China.
authors.forename: Tianyou
authors.initials: T
authors.lastname: Zhai
keywords: boron; field emission; field‐effect transistors; photoelectricity; ultrathin nanosheets