title: Electron beam-formed ferromagnetic defects on MoS2surface along 1 T phase transition.
abstract: 1 T phase incorporation into 2H-MoS2via an optimal electron irradiation leads to induce a weak ferromagnetic state at room temperature, together with the improved transport property. In addition to the 1T-like defects, the electron irradiation on the cleaved MoS2surface forms the concentric circle-type defects that are caused by the 2 H/1 T phase transition and the vacancies of the nearby S atoms of the Mo atoms. The electron irradiation-reduced bandgap is promising in vanishing the Schottky barrier to attaining spintronics device. The simple method to control and improve the magnetic and electrical properties on the MoS2surface provides suitable ways for the low-dimensional device applications.
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
authors.forename: Sang Wook
authors.initials: SW
authors.lastname: Han
authors.affiliation: School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
authors.forename: Youngsin
authors.initials: Y
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
authors.forename: Young Hun
authors.initials: YH
authors.lastname: Hwang
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
authors.forename: Soyoung
authors.initials: S
authors.lastname: Jekal
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
authors.forename: Manil
authors.initials: M
authors.lastname: Kang
authors.affiliation: School of Natural Science, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea.
authors.forename: Wang G
authors.initials: WG
authors.lastname: Lee
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University, Seoul 04620, Korea.
authors.forename: Woochul
authors.initials: W
authors.lastname: Yang
authors.affiliation: Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Korea.
authors.forename: Gun-Do
authors.initials: GD
authors.lastname: Lee
authors.affiliation: Department of Physics and Energy Harvest-Storage Research Center (EHSRC), University of Ulsan, Ulsan 44610, Korea.
authors.forename: Soon Cheol
authors.initials: SC
authors.lastname: Hong