title: ~3-nm ZnO Nanoislands Deposition and Application in Charge Trapping Memory Grown by Single ALD Step.
abstract: Low-dimensional semiconductor nanostructures are of great interest in high performance electronic and photonic devices. ZnO is considered to be a multifunctional material due to its unique properties with potential in various applications. In this work, 3-nm ZnO nanoislands are deposited by Atomic Layer Deposition (ALD) and the electronic properties are characterized by UV-Vis-NIR Spectrophotometer and X-ray Photoelectron Spectroscopy. The results show that the nanostructures show quantum confinement effects in 1D. Moreover, Metal-Oxide-Semiconductor Capacitor (MOSCAP) charge trapping memory devices with ZnO nanoislands charge storage layer are fabricated by a single ALD step and their performances are analyzed. The devices showed a large memory window at low operating voltages with excellent retention and endurance characteristics due to the additional oxygen vacancies in the nanoislands and the deep barrier for the trapped holes due to the reduction in ZnO electron affinity. The results show that the ZnO nanoislands are promising in future low power memory applications.
authors.affiliation: Institute Center for Microsystems - iMicro, EECS, Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates.
authors.forename: Nazek
authors.initials: N
authors.lastname: El-Atab
authors.affiliation: Institute Center for Microsystems - iMicro, EECS, Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates.
authors.forename: Farsad
authors.initials: F
authors.lastname: Chowdhury
authors.affiliation: Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey.|UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Turkan Gamze
authors.initials: TG
authors.lastname: Ulusoy
authors.affiliation: UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey.|Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Amir
authors.initials: A
authors.lastname: Ghobadi
authors.affiliation: UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey.|Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Amin
authors.initials: A
authors.lastname: Nazirzadeh
authors.affiliation: Institute of Materials Science and Nanotechnology, Bilkent University, 06800 Ankara, Turkey.|UNAM-National Nanotechnology Research Center, Bilkent University, 06800 Ankara, Turkey.|Department of Electrical and Electronics Engineering, Bilkent University, 06800 Ankara, Turkey.
authors.forename: Ali K
authors.initials: AK
authors.lastname: Okyay
authors.affiliation: Institute Center for Microsystems - iMicro, EECS, Masdar Institute of Science and Technology Abu Dhabi, United Arab Emirates.
authors.forename: Ammar
authors.initials: A
authors.lastname: Nayfeh