title: Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy.
abstract: A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Hui
authors.initials: H
authors.lastname: Cai
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.affiliation: LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Emmanuel
authors.initials: E
authors.lastname: Soignard
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Afsaneh
authors.initials: A
authors.lastname: Khosravi
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
authors.forename: Marco
authors.initials: M
authors.lastname: Manca
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie
authors.affiliation: LeRoy Eyring Center for Solid State Science, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Shery L Y
authors.initials: SL
authors.lastname: Chang
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 Avenue de Rangueil, 31077, Toulouse, France.
authors.forename: Bernhard
authors.initials: B
authors.lastname: Urbaszek
authors.affiliation: School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
authors.forename: Sefaattin
authors.initials: S
authors.lastname: Tongay
keywords: gallium telluride; physical vapor transport; pseudo-1D materials