title: Permanent Data Storage in ZnO Thin Films by Filamentary Resistive Switching.
abstract: Resistive memories are considered the most promising candidates for the next generation of non-volatile memory; however, attention has so far been limited to rewritable memory features for applications in resistive random access memories (RRAM). In this article, we provide a new insight into the applicability of resistive memories. The characteristics of non-rewritable resistive memories (NRRM) were investigated. Devices with Pt/ZnO/ITO architecture were prepared using magnetron sputtering, upon which various bipolar and unipolar resistive switching tests were performed. The results showed excellent distinction between the high resistance state (HRS) and low resistance state (LRS), with RHRS/RLRS = 5.2 × 1011 for the Pt/ZnO/ITO device with deposition time of 1 h. All samples were stable for more than 104 s, indicating that the devices have excellent applicability in NRRMs.
authors.affiliation: Department of Physics, Federal University of Sergipe, São-Cristóvão, Sergipe, Brazil.
authors.forename: Adolfo Henrique Nunes
authors.initials: AH
authors.lastname: Melo
authors.affiliation: Department of Physics, Federal University of Sergipe, São-Cristóvão, Sergipe, Brazil.
authors.forename: Marcelo Andrade
authors.initials: MA
authors.lastname: Macêdo
mesh_terms: D016248:Computer Storage Devices; D008567:Membranes, Artificial; D015034:Zinc Oxide
chemical_list: D008567:Membranes, Artificial; D015034:Zinc Oxide