title: High-Efficiency and Air-Stable Perovskite Quantum Dots Light-Emitting Diodes with an All-Inorganic Heterostructure.
abstract: Perovskite light-emitting diodes (PeLEDs), because of its fundamental scientific importance and practical applications in the fields of low-cost light source or display applications, have drawn worldwide attention in recent years. However, PeLEDs available today suffer from a compromise in their emission efficiency and operation stability. In this study, we designed and fabricated a stacking all-inorganic multilayer structure by using inorganic perovskite CsPbBr3quantum dots (QDs) as the emissive layer and inorganic n-type MgZnO and p-type MgNiO as the carrier injectors, respectively. Through energy band engineering of carrier injectors by Mg incorporation and their thickness optimization, PeLEDs with maximum luminance of 3809 cd/m2, luminous efficiency of 2.25 cd/A, and external quantum efficiency of 2.39% have been realized, which are much better than most PeLEDs from CH3NH3PbBr3films, and comparable with the highest results reported on CsPbBr3QDs LEDs. More importantly, the unencapsulated PeLEDs in a continuous current mode demonstrate a remarkable operation stability against water and oxygen degradation. After a continuous operation for 10 h under a dc bias (10.0 V), nearly 80% of the original efficiency of the PeLEDs has been retained, greatly superior to reference and other previously reported devices constructed with conventional organic carrier injectors. Our results obtained open possibilities for the design and development of high-efficiency and air-stable PeLEDs that are not dependent on expensive and less-stable organic carrier injectors.
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Zhifeng
authors.identifier: 0000-0002-9416-3948
authors.initials: Z
authors.lastname: Shi
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Li
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Qianjin Street 2699, Changchun 130012, China.
authors.forename: Yuantao
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Yongsheng
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Xinjian
authors.initials: X
authors.lastname: Li
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.
authors.forename: Tingting
authors.initials: T
authors.lastname: Xu
authors.affiliation: Department of Physics and Engineering, Zhengzhou University , Daxue Road 75, Zhengzhou 450052, China.|State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, China.
authors.forename: Chongxin
authors.initials: C
authors.lastname: Shan
authors.affiliation: State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University , Qianjin Street 2699, Changchun 130012, China.
authors.forename: Guotong
authors.initials: G
authors.lastname: Du
keywords: CsPbBr3; Perovskite; light-emitting diodes; operation stability; quantum dots