title: Achieving Uniform Monolayer Transition Metal Dichalcogenides Film on Silicon Wafer via Silanization Treatment: A Typical Study on WS2.
abstract: A silanization reaction is employed to improve the dispersion of precursors on a silicon wafer for a large-size uniform transition metal dichalcogenide (TMD) film synthesis and to achieve a highly crystalline monolayer WS2film up to 1 cm2. The novel strategy is also verified for the synthesis of WSe2and MoS2uniform films, suggesting universality for TMD film fabrication.
authors.affiliation: State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: Gan
authors.affiliation: State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
authors.forename: Huiqiao
authors.initials: H
authors.lastname: Li
authors.affiliation: State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, P. R. China.
authors.forename: Tianyou
authors.initials: T
authors.lastname: Zhai
keywords: chemical vapor deposition; silanization; uniform films