title: Controllable Synthesis of Graphene by Plasma-Enhanced Chemical Vapor Deposition and Its Related Applications.
abstract: Graphene and its derivatives hold a great promise for widespread applications such as field-effect transistors, photovoltaic devices, supercapacitors, and sensors due to excellent properties as well as its atomically thin, transparent, and flexible structure. In order to realize the practical applications, graphene needs to be synthesized in a low-cost, scalable, and controllable manner. Plasma-enhanced chemical vapor deposition (PECVD) is a low-temperature, controllable, and catalyst-free synthesis method suitable for graphene growth and has recently received more attentions. This review summarizes recent advances in the PECVD growth of graphene on different substrates, discusses the growth mechanism and its related applications. Furthermore, the challenges and future development in this field are also discussed.
authors.affiliation: State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai 200433 P. R. China.
authors.forename: Menglin
authors.initials: M
authors.lastname: Li
authors.affiliation: State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai 200433 P. R. China.
authors.forename: Donghua
authors.initials: D
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Molecular Engineering of Polymers Department of Macromolecular Science Fudan University Shanghai 200433 P. R. China.
authors.forename: Dacheng
authors.initials: D
authors.lastname: Wei
authors.affiliation: Key Laboratory of Multi-scale Manufacturing Technology Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences Chongqing 400714 P. R. China.
authors.forename: Xuefen
authors.initials: X
authors.lastname: Song
authors.affiliation: Key Laboratory of Multi-scale Manufacturing Technology Chongqing Institute of Green and Intelligent Technology Chinese Academy of Sciences Chongqing 400714 P. R. China.
authors.forename: Dapeng
authors.initials: D
authors.lastname: Wei
authors.affiliation: Physics Department National University of Singapore 2 Science Drive 3 Singapore 117542 Singapore.
authors.forename: Andrew Thye Shen
authors.initials: AT
authors.lastname: Wee
keywords: controllable synthesis; graphene; growth mechanism; plasma‐enhanced chemical vapor deposition