title: Harman Measurements for Thermoelectric Materials and Modules under Non-Adiabatic Conditions.
abstract: Accuracy of the Harman measurement largely depends on the heat transfer between the sample and its surroundings, so-called parasitic thermal effects (PTEs). Similar to the material evaluations, measuring thermoelectric modules (TEMs) is also affected by the PTEs especially when measuring under atmospheric condition. Here, we study the correction methods for the Harman measurements with systematically varied samples (both bulk materials and TEMs) at various conditions. Among several PTEs, the heat transfer via electric wires is critical. Thus, we estimate the thermal conductance of the electric wires, and correct the measured properties for a certain sample shape and measuring temperature. The PTEs are responsible for the underestimation of the TEM properties especially under atmospheric conditions (10-35%). This study will be useful to accurately characterize the thermoelectric properties of materials and modules.
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Im-Jun
authors.initials: IJ
authors.lastname: Roh
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.|Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul, 02841, Republic of Korea.
authors.forename: Yun Goo
authors.initials: YG
authors.lastname: Lee
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.|Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul, 02841, Republic of Korea.
authors.forename: Min-Su
authors.initials: MS
authors.lastname: Kang
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Jae-Uk
authors.initials: JU
authors.lastname: Lee
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.|Department of Nanomaterials Science and Technology, Korea University of Science and Technology, Daejeon, 34113, Republic of Korea.
authors.forename: Seung-Hyub
authors.initials: SH
authors.lastname: Baek
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Seong Keun
authors.initials: SK
authors.lastname: Kim
authors.affiliation: Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul, 02841, Republic of Korea.
authors.forename: Byeong-Kwon
authors.initials: BK
authors.lastname: Ju
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Dow-Bin
authors.initials: DB
authors.lastname: Hyun
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Jin-Sang
authors.initials: JS
authors.lastname: Kim
authors.affiliation: Center for Electronic Materials, Korea Institute of Science and Technology (KIST), Seoul, 02792, Republic of Korea.
authors.forename: Beomjin
authors.initials: B
authors.lastname: Kwon