title: Chemically Homogeneous and Thermally Robust Ni1-xPtxSi Film Formed Under a Non-Equilibrium Melting/Quenching Condition.
abstract: To synthesize a thermally robust Ni1-xPtxSi film suitable for ultrashallow junctions in advanced metal-oxide-semiconductor field-effect transistors, we used a continuous laser beam to carry out millisecond annealing (MSA) on a preformed Ni-rich silicide film at a local surface temperature above 1000 °C while heating the substrate to initiate a phase transition. The melting and quenching process by this unique high-temperature MSA process formed a Ni1-xPtxSi film with homogeneous Pt distribution across the entire film thickness. After additional substantial thermal treatment up to 800 °C, the noble Ni1-xPtxSi film maintained a low-resistive phase without agglomeration and even exhibited interface flattening with the underlying Si substrate.
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.|Department of Semiconductor and Display Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Jinbum
authors.initials: J
authors.lastname: Kim
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Seongheum
authors.initials: S
authors.lastname: Choi
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.|Department of Semiconductor and Display Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Taejin
authors.initials: T
authors.lastname: Park
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Jinyong
authors.initials: J
authors.lastname: Kim
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Chulsung
authors.initials: C
authors.lastname: Kim
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Taeho
authors.initials: T
authors.lastname: Cha
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.|Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea.
authors.forename: Hyangsook
authors.initials: H
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea.
authors.forename: Eunha
authors.initials: E
authors.lastname: Lee
authors.affiliation: Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea.
authors.forename: Jung Yeon
authors.initials: JY
authors.lastname: Won
authors.affiliation: Samsung Advanced Institute of Technology , Suwon 16678, Republic of Korea.
authors.forename: Hyung-Ik
authors.initials: HI
authors.lastname: Lee
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Sangjin
authors.initials: S
authors.lastname: Hyun
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Sunjung
authors.initials: S
authors.lastname: Kim
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Dongsuk
authors.initials: D
authors.lastname: Shin
authors.affiliation: Semiconductor R&D Center, Samsung Electronics , Hwaseong 18488, Republic of Korea.
authors.forename: Yihwan
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Department of Semiconductor and Display Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Keewon
authors.initials: K
authors.lastname: Kwon
authors.affiliation: School of Advanced Materials Science and Engineering, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Hyoungsub
authors.identifier: http://orcid.org/0000-0001-6518-3563
authors.initials: H
authors.lastname: Kim
keywords: Ni; Pt; agglomeration; melting; millisecond annealing; silicide