title: Two-dimensional WS2nanoribbon deposition by conversion of pre-patterned amorphous silicon.
abstract: We present a method for area selective deposition of 2D WS2nanoribbons with tunable thickness on a dielectric substrate. The process is based on a complete conversion of a pre-patterned, H-terminated Si layer to metallic W by WF6, followed by in situ sulfidation by H2S. The reaction process, performed at 450 °C, yields nanoribbons with lateral dimension down to 20 nm and with random basal plane orientation. The thickness of the nanoribbons is accurately controlled by the thickness of the pre-deposited Si layer. Upon rapid thermal annealing at 900 °C under inert gas, the WS2basal planes align parallel to the substrate.
authors.affiliation: Chemistry Department, KU Leuven, Celestijnenlaan 200F, 3001 Leuven, Belgium. Chemistry Department, University of Antwerp, Universiteitsplein 1, 2610 Antwerpen-Wilrijk,  Belgium. imec, Kapeldreef 75, 3001 Leuven, Belgium.
authors.forename: Markus H
authors.initials: MH
authors.lastname: Heyne
authors.forename: Jean-François
authors.initials: JF
authors.lastname: de Marneffe
authors.forename: Annelies
authors.initials: A
authors.lastname: Delabie
authors.forename: Matty
authors.initials: M
authors.lastname: Caymax
authors.forename: Erik C
authors.initials: EC
authors.lastname: Neyts
authors.forename: Iuliana
authors.initials: I
authors.lastname: Radu
authors.forename: Cedric
authors.initials: C
authors.lastname: Huyghebaert
authors.forename: Stefan
authors.initials: S
authors.lastname: De Gendt