title: High-power dual-wavelength lasing in bimodal-sized InGaAs/GaAs quantum dots.
abstract: In this paper, we demonstrate high power, dual-wavelength (dual-λ) lasing stemming from bimodal-sized InGaAs/GaAs quantum dots (QDs). The device exhibits simultaneous dual-λ lasing at 1015.2 nm and 1023.0 nm with total power of 165.6 mW at 700 mA under room temperature continuous wave (CW) mode. Gaussian fitting analyses of the electroluminescence (EL) spectrum attribute the excellent performance to independent carrier transitions from the first excited states of large dot ensemble (LD ES1) and small dot ensemble (SD ES1), respectively. This formation provides a new possibility to achieve high power dual-λ operation only using Fabry-Pérot (FP) cavity, which is significant for compact size and low fabrication cost.
authors.forename: Yinli
authors.initials: Y
authors.lastname: Zhou
authors.forename: Jian
authors.initials: J
authors.lastname: Zhang
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Ning
authors.forename: Yugang
authors.initials: Y
authors.lastname: Zeng
authors.forename: Jianwei
authors.initials: J
authors.lastname: Zhang
authors.forename: Xing
authors.initials: X
authors.lastname: Zhang
authors.forename: Li
authors.initials: L
authors.lastname: Qin
authors.forename: Cunzhu
authors.initials: C
authors.lastname: Tong
authors.forename: Yun
authors.initials: Y
authors.lastname: Liu
authors.forename: Lijun
authors.initials: L
authors.lastname: Wang