title: Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures.
abstract: The van der Waals interaction in vertical heterostructures made of two-dimensional (2D) materials relaxes the requirement of lattice matching, therefore enabling great design flexibility to tailor novel 2D electronic systems. Here we report the successful growth of MoSe2on single-layer hexagonal boron nitride (hBN) on the Ru(0001) substrate using molecular beam epitaxy. Using scanning tunnelling microscopy and spectroscopy, we found that the quasi-particle bandgap of MoSe2on hBN/Ru is about 0.25 eV smaller than those on graphene or graphite substrates. We attribute this result to the strong interaction between hBN/Ru, which causes residual metallic screening from the substrate. In addition, the electronic structure and the work function of MoSe2are modulated electrostatically with an amplitude of ∼0.13 eV. Most interestingly, this electrostatic modulation is spatially in phase with the Moiré pattern of hBN on Ru(0001) whose surface also exhibits a work function modulation of the same amplitude.
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA.|Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, Hefei 230026, China.|Department of Physics, University of Science and Technology of China, Hefei 230026, China.
authors.forename: Qiang
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA.
authors.forename: Yuxuan
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA.
authors.forename: Chendong
authors.initials: C
authors.lastname: Zhang
authors.affiliation: School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.
authors.forename: Chi-Ruei
authors.initials: CR
authors.lastname: Pan
authors.affiliation: School of Physics, Georgia Institute of Technology, Atlanta, Georgia 30332, USA.|Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei 10617, Taiwan.|Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Mei-Yin
authors.initials: MY
authors.lastname: Chou
authors.affiliation: Hefei National Laboratory for Physical Sciences at the Microscale (HFNL), CAS Key Laboratory of Strongly-Coupled Quantum Matter Physics, Hefei 230026, China.|Department of Physics, University of Science and Technology of China, Hefei 230026, China.|International Center for Quantum Design of Functional Materials (ICQD), HFNL, University of Science and Technology of China, Hefei 230026, China.|Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China.
authors.forename: Changgan
authors.initials: C
authors.lastname: Zeng
authors.affiliation: Department of Physics, University of Texas at Austin, Austin, Texas 78712, USA.
authors.forename: Chih-Kang
authors.initials: CK
authors.lastname: Shih