title: Chemical Vapor Deposition Growth of Few-Layer MoTe2in the 2H, 1T', and 1T Phases: Tunable Properties of MoTe2Films.
abstract: Chemical vapor deposition allows the preparation of few-layer films of MoTe2in three distinct structural phases depending on the growth quench temperature: 2H, 1T', and 1T. We present experimental and computed Raman spectra for each of the phases and utilize transport measurements to explore the properties of the 1T MoTe2phase. Density functional theory modeling predicts a (semi-)metallic character. Our experimental 1T films affirm the former, show facile μA-scale source-drain currents, and increase in conductivity with temperature, different from the 1T' phase. Variation of the growth method allows the formation of hybrid films of mixed phases that exhibit susceptibility to gating and significantly increased conductivity.
authors.forename: Thomas A
authors.identifier: 0000-0003-0636-385X
authors.initials: TA
authors.lastname: Empante
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94304, United States.
authors.forename: Yao
authors.initials: Y
authors.lastname: Zhou
authors.forename: Velveth
authors.initials: V
authors.lastname: Klee
authors.forename: Ariana E
authors.initials: AE
authors.lastname: Nguyen
authors.forename: I-Hsi
authors.initials: IH
authors.lastname: Lu
authors.forename: Michael D
authors.initials: MD
authors.lastname: Valentin
authors.forename: Sepedeh A
authors.initials: SA
authors.lastname: Naghibi Alvillar
authors.forename: Edwin
authors.initials: E
authors.lastname: Preciado
authors.forename: Adam J
authors.initials: AJ
authors.lastname: Berges
authors.forename: Cindy S
authors.initials: CS
authors.lastname: Merida
authors.forename: Michael
authors.initials: M
authors.lastname: Gomez
authors.forename: Sarah
authors.initials: S
authors.lastname: Bobek
authors.forename: Miguel
authors.initials: M
authors.lastname: Isarraraz
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94304, United States.
authors.forename: Evan J
authors.initials: EJ
authors.lastname: Reed
authors.forename: Ludwig
authors.initials: L
authors.lastname: Bartels
keywords: chemical vapor deposition; metal semiconductor transition; phase change material; thin-layer materials; transition-metal dichalcogenides