title: Compact GaSb/silicon-on-insulator 2.0x μm widely tunable external cavity lasers.
abstract: 2.0x µm widely tunable external cavity lasers realized by combining a GaSb gain chip with a silicon photonics waveguide circuit for wavelength selection are demonstrated. Wavelength tuning over 58 nm from 2.01 to 2.07 µm is demonstrated. In the silicon photonic integrated circuit, laser feedback is realized by using a silicon Bragg grating and continuous tuning is realized by using two thermally tuned silicon microring resonators (MRRs) and a phase section. The uncooled laser has maximum output power of 7.5 mW and threshold current density of 0.8 kA/cm2. The effect of the coupling gap of the MRRs on tunable laser performance is experimentally assessed. A side mode suppression ratio better than 52 dB over the full tuning range and in the optimum operation point of more than 60 dB is achieved for the laser with weakly coupled MRRs.
authors.forename: Ruijun
authors.initials: R
authors.lastname: Wang
authors.forename: Aditya
authors.initials: A
authors.lastname: Malik
authors.forename: Ieva
authors.initials: I
authors.lastname: Šimonytė
authors.forename: Augustinas
authors.initials: A
authors.lastname: Vizbaras
authors.forename: Kristijonas
authors.initials: K
authors.lastname: Vizbaras
authors.forename: Gunther
authors.initials: G
authors.lastname: Roelkens