title: Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer.
abstract: We report the systematic experimental studies demonstrating that a graphene layer inserted at metal/n-Si(001) interface is efficient to explore interface Fermi-level pinning effect. It is confirmed that an inserted graphene layer prevents atomic interdiffusion to form an atomically abrupt Schottky contact. The Schottky barriers of metal/graphene/n-Si(001) junctions show a very weak dependence on metal work-function, implying that the metal Fermi-level is almost completely pinned at charge neutrality level close to the valence band edge of Si. The atomically impermeable and electronically transparent properties of graphene can be used generally to form an intact Schottky contact for all semiconductors.
authors.forename: Hoon Hahn
authors.initials: HH
authors.lastname: Yoon
authors.forename: Sungchul
authors.initials: S
authors.lastname: Jung
authors.forename: Gahyun
authors.initials: G
authors.lastname: Choi
authors.forename: Junhyung
authors.initials: J
authors.lastname: Kim
authors.forename: Youngeun
authors.initials: Y
authors.lastname: Jeon
authors.affiliation: Department of Physics and Energy Harvest-Storage Reseach Center (EHSRC), University of Ulsan , Ulsan 44610, Republic of Korea.
authors.forename: Yong Soo
authors.identifier: 0000-0001-8641-1035
authors.initials: YS
authors.lastname: Kim
authors.forename: Hu Young
authors.initials: HY
authors.lastname: Jeong
authors.forename: Kwanpyo
authors.initials: K
authors.lastname: Kim
authors.forename: Soon-Yong
authors.initials: SY
authors.lastname: Kwon
authors.forename: Kibog
authors.identifier: 0000-0003-4086-7365
authors.initials: K
authors.lastname: Park
mesh_terms: D003460:Crystallization; D004553:Electric Conductivity; D006108:Graphite / Q000737:chemistry*; D008670:Metals / Q000737:chemistry*; D046529:Microscopy, Electron, Transmission; D049329:Nanostructures / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D012825:Silicon / Q000737:chemistry*; D013499:Surface Properties
chemical_list: D008670:Metals; D006108:Graphite; D012825:Silicon
keywords: Fermi-level pinning; Schottky barrier; diffusion barrier; graphene; intact interface; internal photoemission