title: Surface Recombination and Collection Efficiency in Perovskite Solar Cells from Impedance Analysis.
abstract: The large diffusion lengths recurrently measured in perovskite single crystals and films signal small bulk nonradiative recombination flux and locate the dominant carrier recombination processes at the outer interfaces. Surface recombination largely determines the photovoltaic performance, governing reductions under short-circuit current and open-circuit voltage. Quantification of recombination losses is necessary to reach full understanding of the solar cell operating principles. Complete impedance model is given, which connects capacitive and resistive processes to the electronic kinetics at the interfaces. Carrier collection losses affecting the photocurrent have been determined to equal 1%. Photovoltage loss is linked to the decrease in surface hole density, producing 0.3 V reduction with respect to the ideal radiative limit. Our approach enables a comparison among different structures, morphologies, and processing strategies of passivation and buffer layers.
authors.affiliation: Institute of Advanced Materials (INAM), Universitat Jaume I , 12006 Castelló, Spain.
authors.forename: Isaac
authors.initials: I
authors.lastname: Zarazua
authors.affiliation: Energy Research Institute @NTU (ERI@N), Nanyang Technological University , Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore.
authors.forename: Guifang
authors.initials: G
authors.lastname: Han
authors.affiliation: Energy Research Institute @NTU (ERI@N), Nanyang Technological University , Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore.
authors.forename: Pablo P
authors.identifier: http://orcid.org/0000-0001-9518-7549
authors.initials: PP
authors.lastname: Boix
authors.affiliation: Energy Research Institute @NTU (ERI@N), Nanyang Technological University , Research Techno Plaza, X-Frontier Block, Level 5, 50 Nanyang Drive, 637553 Singapore.|School of Materials Science and Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798 Singapore.
authors.forename: Subodh
authors.initials: S
authors.lastname: Mhaisalkar
authors.affiliation: Institute of Advanced Materials (INAM), Universitat Jaume I , 12006 Castelló, Spain.
authors.forename: Francisco
authors.initials: F
authors.lastname: Fabregat-Santiago
authors.affiliation: Institute of Advanced Materials (INAM), Universitat Jaume I , 12006 Castelló, Spain.
authors.forename: Ivan
authors.identifier: http://orcid.org/0000-0003-2508-0994
authors.initials: I
authors.lastname: Mora-Seró
authors.affiliation: Institute of Advanced Materials (INAM), Universitat Jaume I , 12006 Castelló, Spain.|Department of Chemistry, Faculty of Science, King Abdulaziz University , Jeddah 21589, Saudi Arabia.
authors.forename: Juan
authors.initials: J
authors.lastname: Bisquert
authors.affiliation: Institute of Advanced Materials (INAM), Universitat Jaume I , 12006 Castelló, Spain.
authors.forename: Germà
authors.identifier: http://orcid.org/0000-0002-0172-6175
authors.initials: G
authors.lastname: Garcia-Belmonte