title: Realization of Functional Complete Stateful Boolean Logic in Memristive Crossbar.
abstract: Nonvolatile stateful logic computing in memristors is a promising paradigm with which to realize the unity of information storage and processing in the same physical location that has shown great feasibility for breaking the von Neumann bottleneck in traditional computing architecture. How to reduce the computational complexity of memristor-based logic functions is a matter of concern. Here, based on a general logic expression, we proposed a method to implement the arbitrary logic of complete 16 Boolean logic in two steps with one memristor in the crossbar architecture. A representative functional complete NAND logic is successfully experimentally demonstrated in the filamentary Ag-AgGeTe-Ta memristors to prove the validity of our method. We believe our work may promote the development of the revolutionary logic in memory architectures.
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Yi
authors.identifier: http://orcid.org/0000-0003-1930-8550
authors.initials: Y
authors.lastname: Li
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Ya-Xiong
authors.initials: YX
authors.lastname: Zhou
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Ke
authors.initials: K
authors.lastname: Lu
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Zhuo-Rui
authors.initials: ZR
authors.lastname: Wang
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Nian
authors.initials: N
authors.lastname: Duan
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Lei
authors.initials: L
authors.lastname: Jiang
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Long
authors.initials: L
authors.lastname: Cheng
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Ting-Chang
authors.initials: TC
authors.lastname: Chang
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Kuan-Chang
authors.initials: KC
authors.lastname: Chang
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Hua-Jun
authors.initials: HJ
authors.lastname: Sun
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Kan-Hao
authors.initials: KH
authors.lastname: Xue
authors.affiliation: School of Optical and Electronic Information and ‡Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology (HUST) , Wuhan 430074, China.|Department of Physics and ⊥Department of Materials and Optoelectronic Science, National Sun Yat-Sen University , Kaohsiung 804, Taiwan.
authors.forename: Xiang-Shui
authors.initials: XS
authors.lastname: Miao
keywords: AgGeTe; Boolean logic; functional completeness; memristor; resistive switching