title: MoS2Field-Effect Transistor with Sub-10 nm Channel Length.
abstract: Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large bandgap of MoS2minimize direct source-drain tunneling, while its atomically thin body maximizes the gate modulation efficiency in ultrashort-channel transistors. However, no experimental study to date has approached the sub-10 nm scale due to the multiple challenges related to nanofabrication at this length scale and the high contact resistance traditionally observed in MoS2transistors. Here, using the semiconducting-to-metallic phase transition of MoS2, we demonstrate sub-10 nm channel-length transistor fabrication by directed self-assembly patterning of mono- and trilayer MoS2. This is done in a 7.5 nm half-pitch periodic chain of transistors where semiconducting (2H) MoS2channel regions are seamlessly connected to metallic-phase (1T') MoS2access and contact regions. The resulting 7.5 nm channel-length MoS2FET has a low off-current of 10 pA/μm, an on/off current ratio of >107, and a subthreshold swing of 120 mV/dec. The experimental results presented in this work, combined with device transport modeling, reveal the remarkable potential of 2D MoS2for future sub-10 nm technology nodes.
authors.forename: Amirhasan
authors.initials: A
authors.lastname: Nourbakhsh
authors.forename: Ahmad
authors.initials: A
authors.lastname: Zubair
authors.forename: Redwan N
authors.initials: RN
authors.lastname: Sajjad
authors.forename: Amir
authors.initials: A
authors.lastname: Tavakkoli K G
authors.affiliation: Department of Physics, Harvard University , Cambridge, Massachusetts 02138, United States.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Department of Physics, Harvard University , Cambridge, Massachusetts 02138, United States.
authors.forename: Shiang
authors.initials: S
authors.lastname: Fang
authors.forename: Xi
authors.initials: X
authors.lastname: Ling
authors.forename: Jing
authors.initials: J
authors.lastname: Kong
authors.forename: Mildred S
authors.initials: MS
authors.lastname: Dresselhaus
authors.affiliation: Department of Physics, Harvard University , Cambridge, Massachusetts 02138, United States.
authors.forename: Efthimios
authors.initials: E
authors.lastname: Kaxiras
authors.forename: Karl K
authors.initials: KK
authors.lastname: Berggren
authors.forename: Dimitri
authors.initials: D
authors.lastname: Antoniadis
authors.forename: Tomás
authors.initials: T
authors.lastname: Palacios
keywords: MoS2 FETs; block copolymers; phase transition; sub-10 nm; virtual source modeling