title: Doping Versatile n-Type Organic Semiconductors via Room Temperature Solution-Processable Anionic Dopants.
abstract: In this study, we describe a facile solution-processing method to effectively dope versatile n-type organic semiconductors, including fullerene, n-type small molecules, and graphene by commercially available ammonium and phosphonium salts via in situ anion-induced electron transfer. In addition to the Lewis basicity of anions, we unveiled that the ionic binding strength between the cation and anion of the salts is also crucial in modulating the electron transfer strength of the dopants to affect the resulting doping efficiency. Furthermore, combined with the rational design of n-type molecules, an n-doped organic semiconductor is demonstrated to be thermally and environmentally stable. This finding provides a simple and generally applicable method to make highly efficient n-doped conductors which complements the well-established p-doped organics such as PEDOT:PSS for organic electronic applications.
authors.affiliation: Department of Materials Science & Engineering, University of Washington , Seattle, Washington 98195, United States.
authors.forename: Chu-Chen
authors.identifier: http://orcid.org/0000-0003-1203-4227
authors.initials: CC
authors.lastname: Chueh
authors.affiliation: Department of Materials Science & Engineering, University of Washington , Seattle, Washington 98195, United States.|MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Chang-Zhi
authors.initials: CZ
authors.lastname: Li
authors.affiliation: Department of Chemistry, University of Washington , Seattle, Washington 98195, United States.
authors.forename: Feizhi
authors.initials: F
authors.lastname: Ding
authors.affiliation: Department of Materials Science & Engineering, University of Washington , Seattle, Washington 98195, United States.
authors.forename: Zhong'an
authors.initials: Z
authors.lastname: Li
authors.affiliation: Department of Materials Science & Engineering, University of Washington , Seattle, Washington 98195, United States.
authors.forename: Nathan
authors.initials: N
authors.lastname: Cernetic
authors.affiliation: Department of Chemistry, University of Washington , Seattle, Washington 98195, United States.
authors.forename: Xiaosong
authors.identifier: http://orcid.org/0000-0001-7341-6240
authors.initials: X
authors.lastname: Li
authors.affiliation: Department of Materials Science & Engineering, University of Washington , Seattle, Washington 98195, United States.|Department of Chemistry, University of Washington , Seattle, Washington 98195, United States.|Department of Physics & Materials Science, City University of Hong Kong , Kowloon, Hong Kong.|MOE Key Laboratory of Macromolecular Synthesis and Functionalization, State Key Laboratory of Silicon Materials, Department of Polymer Science and Engineering, Zhejiang University , Hangzhou 310027, P. R. China.
authors.forename: Alex K-Y
authors.initials: AK
authors.lastname: Jen
keywords: anion-induced electron transfer; anionic dopant; conductivity; n-doping; organic electronics