title: Theoretical analysis of performance enhancement in GeSn/SiGeSn light-emitting diode enabled by Si3N4liner stressor technique.
abstract: We comprehensively investigate the energy band diagrams, carrier distribution, spontaneous emission rate rsp, and the internal quantum efficiency ηIQEin the lattice-matched GeSn/SiGeSn double heterostructure light-emitting diode (LED) wrapped in a Si3N4liner stressor. The large tensile strain introduced into the device by the expansion of the Si3N4liner is characterized by numerical simulation. A lower Sn composition required for the indirect to direct bandgap transition and a higher ratio of the electron occupation probability in the Γ conduction valley are achieved in the tensile strained GeSn/SiGeSn LED in comparison with the relaxed device. Analytical calculation shows that the tensile strained LED wrapped in the Si3N4liner stressor exhibits the improved rspand ηIQEcompared to the relaxed device. rspand ηIQEalso can be enhanced by increasing Sn composition, carrier injection density, and n-type doping concentration in the GeSn active layer.
authors.forename: Qingfang
authors.initials: Q
authors.lastname: Zhang
authors.forename: Yan
authors.initials: Y
authors.lastname: Liu
authors.forename: Genquan
authors.initials: G
authors.lastname: Han
authors.forename: Yao
authors.initials: Y
authors.lastname: Shao
authors.forename: Xi
authors.initials: X
authors.lastname: Gao
authors.forename: Chunfu
authors.initials: C
authors.lastname: Zhang
authors.forename: Jincheng
authors.initials: J
authors.lastname: Zhang
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao