title: Effect of nanocavities on Ge nanoclustering and out-diffusion in SiO2.
abstract: Germanium nanocrystals (Ge-ncs) were synthesized by implantation of Ge+ions into the fused silica, followed by a thermal annealing at 1000 °C. High-resolution transmission electron microscopy was employed to characterize both the morphology of the formed Ge-ncs and the evolution of their depth-distribution as a function of annealing durations. The formation of nanocavities in the vicinity of nanocrystal/SiO2interface is evidenced, as well as their influence on the release of the compressive stress exerted on Ge-ncs by surrounding SiO2. Some Ge-ncs are found inside nanocavities, and can move into the implanted layer through a nanocavity-assisted diffusion mechanism. This finding sheds light on a new process that can explain the non-uniformity of the Ge-nanocrystal spatial distribution.
authors.affiliation: College of Physics & The Cultivation Base for State Key Laboratory, Qingdao University, No. 308 Ningxia Road, Qingdao 266071, People's Republic of China.
authors.forename: Chen
authors.initials: C
authors.lastname: Li
authors.forename: Honglei
authors.initials: H
authors.lastname: Feng
authors.forename: Bin
authors.initials: B
authors.lastname: Liu
authors.forename: Wenshuang
authors.initials: W
authors.lastname: Liang
authors.forename: Guiju
authors.initials: G
authors.lastname: Liu
authors.forename: Guy G
authors.initials: GG
authors.lastname: Ross
authors.forename: Yiqian
authors.initials: Y
authors.lastname: Wang
authors.forename: David
authors.initials: D
authors.lastname: Barba