title: Demonstration of Complementary Ternary Graphene Field-Effect Transistors.
abstract: Strong demand for power reduction in state-of-the-art semiconductor devices calls for novel devices and architectures. Since ternary logic architecture can perform the same function as binary logic architecture with a much lower device density and higher information density, a switch device suitable for the ternary logic has been pursued for several decades. However, a single device that satisfies all the requirements for ternary logic architecture has not been demonstrated. We demonstrated a ternary graphene field-effect transistor (TGFET), showing three discrete current states in one device. The ternary function was achieved by introducing a metal strip to the middle of graphene channel, which created an N-P-N or P-N-P doping pattern depending on the work function of the metal. In addition, a standard ternary inverter working at room temperature has been achieved by modulating the work function of the metal in a graphene channel. The feasibility of a ternary inverter indicates that a general ternary logic architecture can be realized using complementary TGFETs. This breakthrough will provide a key stepping-stone for an extreme-low-power computing technology.
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Yun Ji
authors.initials: YJ
authors.lastname: Kim
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: So-Young
authors.initials: SY
authors.lastname: Kim
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Jinwoo
authors.initials: J
authors.lastname: Noh
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Chang Hoo
authors.initials: CH
authors.lastname: Shim
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Ukjin
authors.initials: U
authors.lastname: Jung
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Sang Kyung
authors.initials: SK
authors.lastname: Lee
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Kyoung Eun
authors.initials: KE
authors.lastname: Chang
authors.affiliation: Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Chunhum
authors.initials: C
authors.lastname: Cho
authors.affiliation: Center for Emerging Electronic Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.|Department of Nanobio Materials and Electronics, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju, 500-712, Korea.
authors.forename: Byoung Hun
authors.initials: BH
authors.lastname: Lee