title: Photoabsorption Tolerance of Intrinsic Point Defects and Oxidation in Black Phosphorus Quantum Dots.
abstract: Black phosphorus quantum dots (BPQDs) exhibit excellent optical and photothermal properties and promising applications in optoelectronics and biomedicine. However, various intrinsic structural defects and oxidation are nearly unavoidable in preparation of BPQDs and how they affect the electronic and optical properties remains unclear. Here, by employing time-dependent density functional theory, we reveal that there are two types of photoabsorption in BPQDs for both point defects and oxidation. A close structure-absorption relation is unraveled: BPQDs are defect-tolerant and show excellent photoabsorption as long as the coordination number (CN) of defective P atoms is 3. By contrast, the unsaturated or oversaturated P atoms with CN ≠ 3 create in-gap-states (IGSs) and completely quench the optical absorption. An effective way to eliminate the IGSs and repair the photoabsorption of defective BPQDs via sufficient hydrogen passivation is further proposed.
authors.affiliation: Department of Physics, Southeast University , Nanjing, 211189, China.
authors.forename: Xianghong
authors.identifier: http://orcid.org/0000-0001-6475-8839
authors.initials: X
authors.lastname: Niu
authors.affiliation: Department of Physics, Southeast University , Nanjing, 211189, China.
authors.forename: Huabing
authors.identifier: http://orcid.org/0000-0001-9278-185X
authors.initials: H
authors.lastname: Shu
authors.affiliation: Department of Physics, Southeast University , Nanjing, 211189, China.
authors.forename: Yunhai
authors.identifier: http://orcid.org/0000-0003-4692-8114
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Physics, Southeast University , Nanjing, 211189, China.
authors.forename: Jinlan
authors.identifier: http://orcid.org/0000-0002-4529-874X
authors.initials: J
authors.lastname: Wang