title: Electronic structures and transport properties of a MoS2-NbS2nanoribbon lateral heterostructure.
abstract: Lateral heterostructures built from an armchair MoS2nanoribbon (AMoS2NR) and an armchair NbS2nanoribbon (ANbS2NR) were studied based on first-principles calculations and a non-equilibrium Green's function method. It is found that the work function of the AMoS2NR shows substantial oscillation with increasing nanoribbon width, which is different from the work functions of other kinds of nanoribbons. The AMoS2NR-ANbS2NR lateral heterostructure exhibits an anomalous transport gap that is much larger than the bandgap of the AMoS2NR. As a result, a field effect transistor with AMoS2NR as the channel and ANbS2NRs as electrodes has high on-off ratios of 106-107and a tiny leakage current of the order of 10-8μA. These results suggest that lateral metal-semiconductor heterostructures of transition metal dichalcogenides may have potential applications in nanodevices with low energy consumption.
authors.affiliation: Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, People's Republic of China. ouyangfp06@tsinghua.org.cn.
authors.forename: Zhixiong
authors.identifier: http://orcid.org/0000-0003-4955-5376
authors.initials: Z
authors.lastname: Yang
authors.affiliation: School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Processing Advanced Materials, Central South University, Changsha 410083, People's Republic of China.
authors.forename: Jiangling
authors.initials: J
authors.lastname: Pan
authors.affiliation: School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Processing Advanced Materials, Central South University, Changsha 410083, People's Republic of China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.affiliation: School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Processing Advanced Materials, Central South University, Changsha 410083, People's Republic of China.
authors.forename: Nannan
authors.initials: N
authors.lastname: Wu
authors.affiliation: School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Processing Advanced Materials, Central South University, Changsha 410083, People's Republic of China.
authors.forename: Mengli
authors.initials: M
authors.lastname: Hu
authors.affiliation: Powder Metallurgy Research Institute and State Key Laboratory of Powder Metallurgy, Central South University, Changsha 410083, People's Republic of China. ouyangfp06@tsinghua.org.cn and School of Physics and Electronics, and Institute of Super-microstructure and Ultrafast Processing Advanced Materials, Central South University, Changsha 410083, People's Republic of China and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, 77 Massachusetts Avenue, Cambridge, Massachusetts 02139, USA.
authors.forename: Fangping
authors.initials: F
authors.lastname: Ouyang