title: Temperature-dependent transport and hysteretic behaviors induced by interfacial states in MoS2field-effect transistors with lead-zirconate-titanate ferroelectric gating.
abstract: We report the temperature and gate-voltage-dependent electrical properties of lead-zirconate-titanate-gated MoS2field-effect transistors (MoS2-PZT FETs) within a temperature range of 300 to 380 K. The MoS2transistors with PZT gating exhibit large reproducible clockwise hysteresis, which is induced by the dynamic charge-trapping/de-trapping process of interfacial states between PZT films and MoS2channels under the modulation of ferroelectric polarization of PZT films. In this way, the modulation of the gate effect on the hysteresis behavior has been achieved by activating the dynamic charge-trapping/de-trapping process in the interfacial states under different Vgs. Moreover, the temperature dependence of the current in the range of 300 to 380 K indicates thermally activated hysteretic behaviors. The hysteresis in the transfer characteristics of MoS2-PZT FETs shows a simultaneous enlargement with increasing temperature, which can be attributed to the thermally sensitive dynamic trapping/de-trapping process of interfacial states.
authors.affiliation: Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, People's Republic of China.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Sun
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.forename: Xiaowen
authors.initials: X
authors.lastname: Zhang
authors.forename: Jianlong
authors.initials: J
authors.lastname: Xu
authors.forename: Xinming
authors.initials: X
authors.lastname: Li
authors.forename: Xian
authors.initials: X
authors.lastname: Li
authors.forename: Ruixuan
authors.initials: R
authors.lastname: Dai
authors.forename: Xiao
authors.initials: X
authors.lastname: Li
authors.forename: Peilian
authors.initials: P
authors.lastname: Li
authors.forename: Xingsen
authors.initials: X
authors.lastname: Gao
authors.forename: Hongwei
authors.initials: H
authors.lastname: Zhu