title: Room-Temperature Skyrmion Shift Device for Memory Application.
abstract: Magnetic skyrmions are intensively explored for potential applications in ultralow-energy data storage and computing. To create practical skyrmionic memory devices, it is necessary to electrically create and manipulate these topologically protected information carriers in thin films, thus realizing both writing and addressing functions. Although room-temperature skyrmions have been previously observed, fully electrically controllable skyrmionic memory devices, integrating both of these functions, have not been developed to date. Here, we demonstrate a room-temperature skyrmion shift memory device, where individual skyrmions are controllably generated and shifted using current-induced spin-orbit torques. Particularly, it is shown that one can select the device operation mode in between (i) writing new single skyrmions or (ii) shifting existing skyrmions by controlling the magnitude and duration of current pulses. Thus, we electrically realize both writing and addressing of a stream of skyrmions in the device. This prototype demonstration brings skyrmions closer to real-world computing applications.
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Guoqiang
authors.identifier: 0000-0002-7439-6920
authors.initials: G
authors.lastname: Yu
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Pramey
authors.initials: P
authors.lastname: Upadhyaya
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Qiming
authors.identifier: 0000-0003-2613-3031
authors.initials: Q
authors.lastname: Shao
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Wu
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Gen
authors.initials: G
authors.lastname: Yin
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Xiang
authors.initials: X
authors.lastname: Li
authors.forename: Congli
authors.initials: C
authors.lastname: He
authors.affiliation: State Key Laboratory of Low-Dimensional Quantum Physics and Department of Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Wanjun
authors.initials: W
authors.lastname: Jiang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Xiufeng
authors.initials: X
authors.lastname: Han
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Pedram Khalili
authors.initials: PK
authors.lastname: Amiri
authors.affiliation: Department of Electrical Engineering, University of California , Los Angeles, California 90095, United States.
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
keywords: Skyrmion; room temperature; shift memory device; spin−orbit torque; thin films