title: Strong Rashba-Edelstein Effect-Induced Spin-Orbit Torques in Monolayer Transition Metal Dichalcogenide/Ferromagnet Bilayers.
abstract: The electronic and optoelectronic properties of two-dimensional materials have been extensively explored in graphene and layered transition metal dichalcogenides (TMDs). Spintronics in these two-dimensional materials could provide novel opportunities for future electronics, for example, efficient generation of spin current, which should enable the efficient manipulation of magnetic elements. So far, the quantitative determination of charge current-induced spin current and spin-orbit torques (SOTs) on the magnetic layer adjacent to two-dimensional materials is still lacking. Here, we report a large SOT generated by current-induced spin accumulation through the Rashba-Edelstein effect in the composites of monolayer TMD (MoS2or WSe2)/CoFeB bilayer. The effective spin conductivity corresponding to the SOT turns out to be almost temperature-independent. Our results suggest that the charge-spin conversion in the chemical vapor deposition-grown large-scale monolayer TMDs could potentially lead to high energy efficiency for magnetization reversal and convenient device integration for future spintronics based on two-dimensional materials.
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Shao
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Guoqiang
authors.initials: G
authors.lastname: Yu
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.|National Nano Device Laboratories, Hsinchu 30078, Taiwan.
authors.forename: Yann-Wen
authors.initials: YW
authors.lastname: Lan
authors.affiliation: Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia.|SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education, College of Optoelectronic Engineering, Shenzhen University , Shenzhen 518060, China.
authors.forename: Yumeng
authors.initials: Y
authors.lastname: Shi
authors.affiliation: Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia.|Research Center for Applied Sciences, Academia Sinica , Taipei 10617, Taiwan.
authors.forename: Ming-Yang
authors.initials: MY
authors.lastname: Li
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Cheng
authors.initials: C
authors.lastname: Zheng
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Zhu
authors.affiliation: Physical Science and Engineering Division, King Abdullah University of Science and Technology , Thuwal 23955-6900, Kingdom of Saudi Arabia.
authors.forename: Lain-Jong
authors.initials: LJ
authors.lastname: Li
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Pedram Khalili
authors.initials: PK
authors.lastname: Amiri
authors.affiliation: Device Research Laboratory, Department of Electrical Engineering, University of California , Los Angeles 90095, United States.
authors.forename: Kang L
authors.initials: KL
authors.lastname: Wang
keywords: Rashba-Edelstein effect; Spin−orbit torque; charge−spin conversion; spintronics; transition metal dichalcogenides; two-dimensional materials