title: Antimonide-based membranes synthesis integration and strain engineering.
abstract: Antimonide compounds are fabricated in membrane form to enable materials combinations that cannot be obtained by direct growth and to support strain fields that are not possible in the bulk. InAs/(InAs,Ga)Sb type II superlattices (T2SLs) with different in-plane geometries are transferred from a GaSb substrate to a variety of hosts, including Si, polydimethylsiloxane, and metal-coated substrates. Electron microscopy shows structural integrity of transferred membranes with thickness of 100 nm to 2.5 [Formula: see text]m and lateral sizes from [Formula: see text]m2to [Formula: see text] cm2Electron microscopy reveals the excellent quality of the membrane interface with the new host. The crystalline structure of the T2SL is not altered by the fabrication process, and a minimal elastic relaxation occurs during the release step, as demonstrated by X-ray diffraction and mechanical modeling. A method to locally strain-engineer antimonide-based membranes is theoretically illustrated. Continuum elasticity theory shows that up to [Formula: see text]3.5% compressive strain can be induced in an InSb quantum well through external bending. Photoluminescence spectroscopy and characterization of an IR photodetector based on InAs/GaSb bonded to Si demonstrate the functionality of transferred membranes in the IR range.
authors.affiliation: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106; marziyeh.zamiri@gmail.com skrishna@chtm.unm.edu.|Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Marziyeh
authors.identifier: 0000-0002-0042-735X
authors.initials: M
authors.lastname: Zamiri
authors.affiliation: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106.|Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Farhana
authors.initials: F
authors.lastname: Anwar
authors.affiliation: Sandia National Laboratories, Albuquerque, NM 87123.
authors.forename: Brianna A
authors.initials: BA
authors.lastname: Klein
authors.affiliation: Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Amin
authors.initials: A
authors.lastname: Rasoulof
authors.affiliation: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106.|Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Noel M
authors.initials: NM
authors.lastname: Dawson
authors.affiliation: Raytheon, Albuquerque, NM 87106.
authors.forename: Ted
authors.initials: T
authors.lastname: Schuler-Sandy
authors.affiliation: Laboratório Nacional de Nanotecnologia, Centro Nacional de Pesquisa em Energia e Materiais, 13083-100 Campinas, SP, Brazil.
authors.forename: Christoph F
authors.initials: CF
authors.lastname: Deneke
authors.affiliation: Departamento de Física, Universidade Federal de Viçosa, 36570-000 Viçosa, MG, Brazil.
authors.forename: Sukarno O
authors.initials: SO
authors.lastname: Ferreira
authors.affiliation: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106.|Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Francesca
authors.initials: F
authors.lastname: Cavallo
authors.affiliation: Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, NM 87106; marziyeh.zamiri@gmail.com skrishna@chtm.unm.edu.|Center for High Technology Materials, University of New Mexico, Albuquerque, NM 87106.
authors.forename: Sanjay
authors.initials: S
authors.lastname: Krishna
keywords: antimonide; infrared; integration; membranes; transfer