title: In-Plane Mosaic Potential Growth of Large-Area 2D Layered Semiconductors MoS2-MoSe2Lateral Heterostructures and Photodetector Application.
abstract: Considering the unique layered structure and novel optoelectronic properties of individual MoS2and MoSe2, as well as the quantum coherence or donor-acceptor coupling effects between these two components, rational design and artificial growth of in-plane mosaic MoS2/MoSe2lateral heterojunctions film on conventional amorphous SiO2/Si substrate are in high demand. In this article, large-area, uniform, high-quality mosaic MoS2/MoSe2lateral heterojunctions film was successfully grown on SiO2/Si substrate for the first time by chemical vapor deposition (CVD) technique. MoSe2film was grown along MoS2triangle edges and occupied the blanks of the substrate, finally leading to the formation of mosaic MoS2/MoSe2lateral heterojunctions film. The composition and microstructure of mosaic MoS2/MoSe2lateral heterojunctions film were characterized by various analytic techniques. Photodetectors based on mosaic MoS2/MoSe2lateral heterojunctions film, triangular MoS2monolayer, and multilayer MoSe2film are systematically investigated. The mosaic MoS2/MoSe2lateral heterojunctions film photodetector exhibited optimal photoresponse performance, giving rise to responsivity, detectivity, and external quantum efficiency (EQE) up to 1.3 A W-1, 2.6 × 1011Jones, and 263.1%, respectively, under the bias voltage of 5 V with 0.29 mW cm-2(610 nm), possibly due to the matched band alignment of MoS2and MoSe2and strong donor-acceptor delocalization effect between them. Taking into account the similar edge conditions of transition metal dichalcogenides (TMDCs), such a facile and reliable approach might open up a unique route for preparing other 2D mosaic lateral heterojunctions films in a manipulative manner. Furthermore, the mosaic lateral heterojunctions film like MoS2/MoSe2in the present work will be a promising candidate for optoelectronic fields.
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.|Department of Physics, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Yunfeng
authors.initials: Y
authors.lastname: Qiu
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Huihui
authors.initials: H
authors.lastname: Yang
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Guangbo
authors.initials: G
authors.lastname: Liu
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Zheng
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Feng
authors.affiliation: Condensed Matter Science and Technology Institute, Harbin Institute of Technology, Harbin 150080, China.
authors.forename: Wenwu
authors.initials: W
authors.lastname: Cao
authors.affiliation: Department of Physics, Harbin Institute of Technology , Harbin 150080, China.|Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Wenping
authors.initials: W
authors.lastname: Hu
authors.affiliation: Key Lab of Microsystem and Microstructure of Ministry of Education, Harbin Institute of Technology , Harbin 150080, China.
authors.forename: PingAn
authors.identifier: http://orcid.org/0000-0003-3499-2733
authors.initials: P
authors.lastname: Hu
keywords: 2D material; MoS2/MoSe2; lateral heterostructure; mosaic; photodetector