title: Three-Dimensional Fin-Structured Semiconducting Carbon Nanotube Network Transistor.
abstract: Three-dimensional (3-D) fin-structured carbon nanotube field-effect transistors (CNT-FETs) with purified 99.9% semiconducting CNTs were demonstrated on a large scale 8 in. silicon wafer. The fabricated 3-D CNT-FETs take advantage of the 3-D geometry and exhibit enhanced electrostatic gate controllability and superior charge transport. A trigated structure surrounding the randomly networked single-walled CNT channel was formed on a fin-like 3-D silicon frame, and as a result, the effective packing density increased to almost 600 CNTs/μm. Additionally, highly sensitive controllability of the threshold voltage (VTH) was achieved using a thin back gate oxide in the same silicon frame to control power consumption and enhance performance. Our results are expected to broaden the design margin of CNT-based circuit architectures for versatile applications. The proposed 3-D CNT-FETs can potentially provide a desirable alternative to silicon based nanoelectronics and a blueprint for furthering the practical use of emerging low-dimensional materials other than CNTs.
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Dongil
authors.initials: D
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Byung-Hyun
authors.initials: BH
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Kookmin University , 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Korea.
authors.forename: Jinsu
authors.initials: J
authors.lastname: Yoon
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Dae-Chul
authors.initials: DC
authors.lastname: Ahn
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Jun-Young
authors.initials: JY
authors.lastname: Park
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Jae
authors.initials: J
authors.lastname: Hur
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Myung-Su
authors.initials: MS
authors.lastname: Kim
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Seung-Bae
authors.initials: SB
authors.lastname: Jeon
authors.affiliation: Department of Nano-process, National Nanofab Center (NNFC) , Daejeon 34141, Korea.
authors.forename: Min-Ho
authors.initials: MH
authors.lastname: Kang
authors.affiliation: Department of Nano-process, National Nanofab Center (NNFC) , Daejeon 34141, Korea.
authors.forename: Kwanghee
authors.initials: K
authors.lastname: Kim
authors.affiliation: Test and Package Technology Group, Mechatronics R&D Center, Samsung Electronics , 1-1 Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, Korea.
authors.forename: Meehyun
authors.initials: M
authors.lastname: Lim
authors.affiliation: School of Electrical Engineering, Kookmin University , 77 Jeongneung-ro, Seongbuk-gu, Seoul 02707, Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Choi
authors.affiliation: School of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Korea.
authors.forename: Yang-Kyu
authors.initials: YK
authors.lastname: Choi
keywords: 3-D structure; carbon nanotubes; fin field-effect transistor (FinFET); high packing density; wafer-scale