title: Flexible Organic/Inorganic Hybrid Field-Effect Transistors with High Performance and Operational Stability.
abstract: The production of high-quality semiconducting nanostructures with optimized electrical, optical, and electromechanical properties is important for the advancement of next-generation technologies. In this context, we herein report on highly obliquely aligned single-crystalline zinc oxide nanosheets (ZnO NSs) grown via the vapor-liquid-solid approach using r-plane (01-12) sapphire as the template surface. The high structural and optical quality of as-grown ZnO NSs has been confirmed using high-resolution transmission electron microscopy and temperature-dependent photoluminescence, respectively. To assess the potential of our NSs as effective building materials in high-performance flexible electronics, we fabricate organic (parylene C)/inorganic (ZnO NS) hybrid field-effect transistor (FET) devices on flexible substrates using room-temperature assembly processes. Extraction of key FET performance parameters suggests that as-grown ZnO NSs can successfully function as excellent n-type semiconducting modules. Such devices are found to consistently show very high on-state currents (Ion) > 40 μA, high field-effect mobility (μeff) > 200 cm2/(V s), exceptionally high on/off current modulation ratio (Ion/off) of around 109, steep subthreshold swing (s-s) < 200 mV/decade, very low hysteresis, and negligible threshold voltage shifts with prolonged electrical stressing (up to 340 min). The present study delivers a concept of integrating high-quality ZnO NS as active semiconducting elements in flexible electronic circuits.
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France.
authors.forename: Abhishek S
authors.identifier: http://orcid.org/0000-0003-4509-2650
authors.initials: AS
authors.lastname: Dahiya
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France.
authors.forename: Charles
authors.initials: C
authors.lastname: Opoku
authors.affiliation: Université François Rabelais de Tours, INSA-CVL, CNRS, GREMAN UMR 7347 , 3 rue de la Chocolaterie, CS 23410, 41034 Cedex Blois, France.
authors.forename: Guylaine
authors.initials: G
authors.lastname: Poulin-Vittrant
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France.
authors.forename: Nicolas
authors.initials: N
authors.lastname: Camara
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France.
authors.forename: Christophe
authors.initials: C
authors.lastname: Daumont
authors.affiliation: MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy.
authors.forename: Eric G
authors.initials: EG
authors.lastname: Barbagiovanni
authors.affiliation: MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy.
authors.forename: Giorgia
authors.identifier: http://orcid.org/0000-0003-3630-0315
authors.initials: G
authors.lastname: Franzò
authors.affiliation: MATIS IMM-CNR and Dipartimento di Fisica e Astronomia, Universita' di Catania , via S. Sofia 64, 95123 Catania, Italy.
authors.forename: Salvo
authors.identifier: http://orcid.org/0000-0002-9559-4862
authors.initials: S
authors.lastname: Mirabella
authors.affiliation: Université François Rabelais de Tours, CNRS, GREMAN UMR 7347 , 16 rue Pierre et Marie Curie, 37071 Cedex 2 Tours, France.
authors.forename: Daniel
authors.initials: D
authors.lastname: Alquier
keywords: field-effect transistors; flexible substrates; nanosheets; organic/inorganic hybrid; zinc oxide