title: Epitaxial Growth and Air-Stability of Monolayer Antimonene on PdTe2.
abstract: Monolayer antimonene is fabricated on PdTe2by an epitaxial method. Monolayer antimonene is theoretically predicted to have a large bandgap for nanoelectronic devices. Air-exposure experiments indicate amazing chemical stability, which is great for device fabrication. A method to fabricate high-quality monolayer antimonene with several great properties for novel electronic and optoelectronic applications is provided.
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Xu
authors.initials: X
authors.lastname: Wu
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Shao
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Hang
authors.initials: H
authors.lastname: Liu
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Zili
authors.initials: Z
authors.lastname: Feng
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
authors.forename: Ye-Liang
authors.initials: YL
authors.lastname: Wang
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Jia-Tao
authors.initials: JT
authors.lastname: Sun
authors.affiliation: Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
authors.forename: Chen
authors.initials: C
authors.lastname: Liu
authors.affiliation: Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
authors.forename: Jia-Ou
authors.initials: JO
authors.lastname: Wang
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Zhong-Liu
authors.initials: ZL
authors.lastname: Liu
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Shi-Yu
authors.initials: SY
authors.lastname: Zhu
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: Yu-Qi
authors.initials: YQ
authors.lastname: Wang
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
authors.forename: Shi-Xuan
authors.initials: SX
authors.lastname: Du
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.
authors.forename: You-Guo
authors.initials: YG
authors.lastname: Shi
authors.affiliation: Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, 100049, China.
authors.forename: Kurash
authors.initials: K
authors.lastname: Ibrahim
authors.affiliation: Institute of Physics and University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, 100190, China.|Collaborative Innovation Center of Quantum Matter, Beijing, 100084, China.|Beijing Key Laboratory for Nanomaterials and Nanodevices, Beijing, 100190, China.
authors.forename: Hong-Jun
authors.initials: HJ
authors.lastname: Gao
keywords: 2D; PdTe2
  ; antimonene; epitaxial growth; honeycomb lattice