title: Enhanced Luminescence Performance of Quantum Wells by Coupling Piezo-Phototronic with Plasmonic Effects.
abstract: With a promising prospect of light-emitting diodes as an attractive alternative to conventional light sources, remaining challenges still cannot be addressed owing to their limited efficiency. Among the continued scientific efforts, significant improvement on the emission efficiency has been achieved via either piezo-phototronic effect-based strain modulation or resonant excitation of plasmons in metallic nanostructures. Here, we present the investigation on the coupling process between piezo-phototronic effect and localized surface plasmonic resonance for enhancing the photoluminescence of InGaN/GaN quantum wells coated with Ag nanoparticles. The underlying physical mechanism of experimental results originates from tuning plasmonic resonance controlled by the shift of emission wavelength via piezo-phototronic effect, and it is further confirmed with the support of theoretical calculations. As a result, our research provides an approach to the integration of plasmonics with piezo-phototronic effect and brings widespread applications to high-efficiency artificial lighting, on-chip integrated plasmonic circuits, subwavelength optical communication, and micro-optoelectronic mechanical systems.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Xin
authors.initials: X
authors.lastname: Huang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Chunyan
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Chunhua
authors.initials: C
authors.lastname: Du
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Liang
authors.initials: L
authors.lastname: Jing
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Mengmeng
authors.initials: M
authors.lastname: Liu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.
authors.forename: Weiguo
authors.identifier: 0000-0002-8614-0359
authors.initials: W
authors.lastname: Hu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences , Beijing 100083, China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.identifier: 0000-0002-5530-0380
authors.initials: ZL
authors.lastname: Wang
keywords: InGaN/GaN quantum wells; light-emitting diodes; piezo-phototronic effect; plasmon resonance; strain engineering