title: Ultrafast laser plasma doping of Er3+ions in silica-on-silicon for optical waveguiding applications.
abstract: An ultrafast laser plasma doping (ULPD) technique is used for high concentration doping of erbium ions into silica-on-silicon substrate. The method uses a femtosecond laser to ablate material from TeO2-ZnO-Na2O-Er2O3(Er-TZN) target glass. The laser-generated plasma modifies the silica network, producing a high-index-contrast optical layer suited to the production of on-chip integrated optical circuits. Cross-sectional analysis using scanning electron microscope with energy dispersive x-ray spectroscopy revealed homogeneous intermixing of the host silica with Er-TZN, which is unique to ULPD. The highly doped layer exhibits spectroscopic characteristics of erbium with photoluminescence lifetimes from 10.79 to 14.07 ms.
authors.forename: Suraya Ahmad
authors.initials: SA
authors.lastname: Kamil
authors.forename: Jayakrishnan
authors.initials: J
authors.lastname: Chandrappan
authors.forename: Matthew
authors.initials: M
authors.lastname: Murray
authors.forename: Paul
authors.initials: P
authors.lastname: Steenson
authors.forename: Thomas F
authors.initials: TF
authors.lastname: Krauss
authors.forename: Gin
authors.initials: G
authors.lastname: Jose