title: Development of betavoltaic cell technology production based on microchannel silicon and its electrical parameters evaluation.
abstract: In the paper a manufacturing process of three-dimensional (3D) microchannel structure by silicon (Si) anodic etching was discussed. The possibility of microchannels formation allows to increase the active area more than 100 times. In this structure the p-n junction on the whole Si surface was formed. The obtained data allowed to evaluate the characteristics of the betavoltaic converter with a 3D structure by using isotope 63Ni with a specific activity of 10Ci/g.
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
authors.forename: A A
authors.initials: AA
authors.lastname: Krasnov
authors.affiliation: Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district, Russia.
authors.forename: V V
authors.initials: VV
authors.lastname: Starkov
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
authors.forename: S A
authors.initials: SA
authors.lastname: Legotin
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia. Electronic address: rabinstudy1@mail.ru.
authors.forename: O I
authors.initials: OI
authors.lastname: Rabinovich
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
authors.forename: S I
authors.initials: SI
authors.lastname: Didenko
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
authors.forename: V N
authors.initials: VN
authors.lastname: Murashev
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia.
authors.forename: V V
authors.initials: VV
authors.lastname: Cheverikin
authors.affiliation: NUST "MISiS", 4, Leninskiy Prosp., 119049 Moscow, Russia; Institute of Microelectronics Technology and High Purity Materials, Russian Academy of Sciences, Akademika Osip'yana St., 142432 Chernogolovka, Moscow district, Russia.
authors.forename: E B
authors.initials: EB
authors.lastname: Yakimov
authors.affiliation: RITVERC GmbH, 10, Kurchatov St., 194223 St. Petersburg, Russia.
authors.forename: N A
authors.initials: NA
authors.lastname: Fedulova
authors.affiliation: RITVERC GmbH, 10, Kurchatov St., 194223 St. Petersburg, Russia.
authors.forename: B I
authors.initials: BI
authors.lastname: Rogozev
authors.affiliation: JSC "Optocoupler" 105187, Shcherbakovskaya St., 53, Moscow.
authors.forename: A S
authors.initials: AS
authors.lastname: Laryushkin
keywords: Anodic etching; Betavoltaic effect; Radioisotope (63)Ni; The microchannel silicon