title: Steep switching characteristics of single-gated feedback field-effect transistors.
abstract: In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec-1, an on/off current ratio of approximately 1011, and an on-current of approximately 10-4A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail.
authors.affiliation: Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Korea.
authors.forename: Minsuk
authors.initials: M
authors.lastname: Kim
authors.forename: Yoonjoong
authors.initials: Y
authors.lastname: Kim
authors.forename: Doohyeok
authors.initials: D
authors.lastname: Lim
authors.forename: Sola
authors.initials: S
authors.lastname: Woo
authors.forename: Kyoungah
authors.initials: K
authors.lastname: Cho
authors.forename: Sangsig
authors.initials: S
authors.lastname: Kim