title: Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for High-Resolution Extreme Ultraviolet Lithography Applications.
abstract: The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Pulikanti Guruprasad
authors.initials: PG
authors.lastname: Reddy
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Satyendra Prakash
authors.initials: SP
authors.lastname: Pal
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Pawan
authors.initials: P
authors.lastname: Kumar
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Chullikkattil P
authors.identifier: 0000-0002-5811-8509
authors.initials: CP
authors.lastname: Pradeep
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Subrata
authors.initials: S
authors.lastname: Ghosh
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Satinder K
authors.initials: SK
authors.lastname: Sharma
authors.affiliation: School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
authors.forename: Kenneth E
authors.initials: KE
authors.lastname: Gonsalves
keywords: 20 nm line patterns; EUV lithography (13.5 nm); complex features; i-line (365 nm); polyarylenesulfonium salts