title: Atom-by-Atom Analysis of Semiconductor Nanowires with Parts Per Million Sensitivity.
abstract: The functionality of semiconductor devices is determined by the incorporation of dopants at concentrations down to the parts per million (ppm) level and below. Optimization of intentional and unintentional impurity doping relies on methods to detect and map the level of impurities. Detecting such low concentrations of impurities in nanostructures is however challenging to date as on the one hand methods used for macroscopic samples cannot be applied due to the inherent small volumes or faceted surfaces and on the other hand conventional microscopic analysis techniques are not sufficiently sensitive. Here, we show that we can detect and map impurities at the ppm level in semiconductor nanowires using atom probe tomography. We develop a method applicable to a wide variety of nanowires relevant for electronic and optical devices. We expect that it will contribute significantly to the further optimization of the synthesis of nanowires, nanostructures and devices based on these structures.
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.
authors.forename: S
authors.identifier: 0000-0002-6606-9110
authors.initials: S
authors.lastname: Koelling
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.|Key Lab of Microstructure and Property of Advanced Materials, Beijing University of Technology , Beijing, 100024, China.
authors.forename: A
authors.initials: A
authors.lastname: Li
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.
authors.forename: A
authors.identifier: 0000-0002-4939-4587
authors.initials: A
authors.lastname: Cavalli
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.
authors.forename: S
authors.identifier: 0000-0002-3919-9112
authors.initials: S
authors.lastname: Assali
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.|Quantum Transport Group, Kavli Institute , Delft, 2628 CJ, The Netherlands.
authors.forename: D
authors.identifier: 0000-0002-6371-8285
authors.initials: D
authors.lastname: Car
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.|Quantum Transport Group, Kavli Institute , Delft, 2628 CJ, The Netherlands.
authors.forename: S
authors.initials: S
authors.lastname: Gazibegovic
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.|Quantum Transport Group, Kavli Institute , Delft, 2628 CJ, The Netherlands.
authors.forename: E P A M
authors.identifier: 0000-0002-8264-6862
authors.initials: EP
authors.lastname: Bakkers
authors.affiliation: Photonics and Semiconductor Nanophysics, Eindhoven University of Technology , Eindhoven, 5600 MB, The Netherlands.
authors.forename: P M
authors.initials: PM
authors.lastname: Koenraad
keywords: Atom Probe Tomography; Impurities; Nanowires