title: High performance visible-near-infrared PbS-quantum-dots/indium Schottky diodes for photodetectors.
abstract: Here we fabricate self-powered photodetectors based on PbS-quantum-dots/indium Schottky barrier diodes successfully. These devices exhibit excellent repeatability and stability at a high frequency (up to1 MHz), and show a typical fast rise time/fall time of ∼0.8 μs/3.2 μs. They also show excellent rectification ratios up to 104with bias from -0.5 V to +0.5 V in the dark and a pronounced photovoltaic performance under light illumination. Moreover, the devices demonstrate high sensitivity in weak light illumination detection (detectivity) approaching 1012Jones and low noise currents <1 pAHz-1/2. These findings suggest great application potential of PbS-quantum-dots for advanced fast response, low noise current, high detectivity and high stability photodetectors.
authors.affiliation: School of Materials Science and Engineering, Hefei University of Technology, Hefei, Anhui, 230009, People's Republic of China.
authors.forename: Longfei
authors.initials: L
authors.lastname: Mi
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.forename: Yan
authors.initials: Y
authors.lastname: Zhang
authors.forename: Xudong
authors.initials: X
authors.lastname: Yao
authors.forename: Yajing
authors.initials: Y
authors.lastname: Chang
authors.forename: Guopeng
authors.initials: G
authors.lastname: Li
authors.forename: Guohua
authors.initials: G
authors.lastname: Li
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang