title: Tunable Positive to Negative Magnetoresistance in Atomically Thin WTe2.
abstract: Transitional metal ditelluride WTe2has been extensively studied owing to its intriguing physical properties like nonsaturating positive magnetoresistance and being possibly a type-II Weyl semimetal. While surging research activities were devoted to the understanding of its bulk properties, it remains a substantial challenge to explore the pristine physics in atomically thin WTe2. Here, we report a successful synthesis of mono- to few-layer WTe2via chemical vapor deposition. Using atomically thin WTe2nanosheets, we discover a previously inaccessible ambipolar behavior that enables the tunability of magnetoconductance of few-layer WTe2from weak antilocalization to weak localization, revealing a strong electrical field modulation of the spin-orbit interaction under perpendicular magnetic field. These appealing physical properties unveiled in this study clearly identify WTe2as a promising platform for exotic electronic and spintronic device applications.
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Enze
authors.initials: E
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Rui
authors.initials: R
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Ce
authors.initials: C
authors.lastname: Huang
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.|National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
authors.forename: Jihai
authors.initials: J
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.
authors.forename: Kaitai
authors.initials: K
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Weiyi
authors.initials: W
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Shanshan
authors.initials: S
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Jiwei
authors.initials: J
authors.lastname: Ling
authors.affiliation: Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.|National Laboratory of Solid State Microstructures, School of Physics, Nanjing University , Nanjing 210093, China.
authors.forename: Xiangang
authors.initials: X
authors.lastname: Wan
authors.affiliation: Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Hai-Zhou
authors.initials: HZ
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Surface Physics and Department of Physics, Fudan University , Shanghai 200433, China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, China.
authors.forename: Faxian
authors.identifier: 0000-0003-2860-0369
authors.initials: F
authors.lastname: Xiu
keywords: WTe2; ambipolar; negative magnetoresistance; spin−orbit interaction; weak antilocalization; weak localization