title: Critical Behavior in Doping-Driven Metal-Insulator Transition on Single-Crystalline Organic Mott-FET.
abstract: We present the carrier transport properties in the vicinity of a doping-driven Mott transition observed at a field-effect transistor (FET) channel using a single crystal of the typical two-dimensional organic Mott insulator κ-(BEDT-TTF)2CuN(CN)2Cl (κ-Cl). The FET shows a continuous metal-insulator transition (MIT) as electrostatic doping proceeds. The phase transition appears to involve two-step crossovers, one in Hall measurement and the other in conductivity measurement. The crossover in conductivity occurs around the conductance quantum e2/h, and hence is not associated with "bad metal" behavior, which is in stark contrast to the MIT in half-filled organic Mott insulators or that in doped inorganic Mott insulators. Through in-depth scaling analysis of the conductivity, it is found that the above carrier transport properties in the vicinity of the MIT can be described by a high-temperature Mott quantum critical crossover, which is theoretically argued to be a ubiquitous feature of various types of Mott transitions.
authors.affiliation: RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.
authors.forename: Yoshiaki
authors.identifier: 0000-0002-2660-0907
authors.initials: Y
authors.lastname: Sato
authors.affiliation: RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.
authors.forename: Yoshitaka
authors.initials: Y
authors.lastname: Kawasugi
authors.affiliation: RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.|Research Center for Integrative Molecular System (CIMoS), Institute for Molecular Science , 38 Nishigo-naka, Myodaiji, Okazaki 444-8585, Japan.
authors.forename: Masayuki
authors.initials: M
authors.lastname: Suda
authors.affiliation: RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.|Research Center for Integrative Molecular System (CIMoS), Institute for Molecular Science , 38 Nishigo-naka, Myodaiji, Okazaki 444-8585, Japan.
authors.forename: Hiroshi M
authors.initials: HM
authors.lastname: Yamamoto
authors.affiliation: RIKEN, Hirosawa, Wako, Saitama 351-0198, Japan.
authors.forename: Reizo
authors.identifier: 0000-0002-2606-4657
authors.initials: R
authors.lastname: Kato
keywords: Hall effect; Mott transition; SAM patterning; field-effect transistor; metal−insulator transition; quantum critical scaling