title: Tomography of a Probe Potential Using Atomic Sensors on Graphene.
abstract: Our ability to access and explore the quantum world has been greatly advanced by the power of atomic manipulation and local spectroscopy with scanning tunneling and atomic force microscopes, where the key technique is the use of atomically sharp probe tips to interact with an underlying substrate. Here we employ atomic manipulation to modify and quantify the interaction between the probe and the system under study that can strongly affect any measurement in low charge density systems, such as graphene. We transfer Co atoms from a graphene surface onto a probe tip to change and control the probe's physical structure, enabling us to modify the induced potential at a graphene surface. We utilize single Co atoms on a graphene field-effect device as atomic scale sensors to quantitatively map the modified potential exerted by the scanning probe over the whole relevant spatial and energy range.
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Jonathan
authors.identifier: 0000-0001-5579-3456
authors.initials: J
authors.lastname: Wyrick
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Fabian D
authors.initials: FD
authors.lastname: Natterer
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.|Maryland NanoCenter, University of Maryland , College Park, Maryland 20742, United States.|Department of Physics, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Advanced Materials Laboratory, National Institute for Materials Science , Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Kenji
authors.identifier: 0000-0003-3701-8119
authors.initials: K
authors.lastname: Watanabe
authors.affiliation: Advanced Materials Laboratory, National Institute for Materials Science , Tsukuba, Ibaraki 305-0044, Japan.
authors.forename: Takashi
authors.initials: T
authors.lastname: Taniguchi
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: William G
authors.initials: WG
authors.lastname: Cullen
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Nikolai B
authors.initials: NB
authors.lastname: Zhitenev
authors.affiliation: Center for Nanoscale Science and Technology, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.
authors.forename: Joseph A
authors.initials: JA
authors.lastname: Stroscio
keywords: STM; atomic manipulation; cobalt; defect charging; graphene; probe potential; screening; tip-induced band bending