title: Electronic properties and transistors of the NbS2-MoS2-NbS2NR heterostructure.
abstract: Based on density function theory and nonequilibrium Green's functions, we construct a NbS2-MoS2-NbS2NR inplane heterostructure. The effects of channel length, width, chirality and vacancy of the heterostructure on transport properties are systematically investigated. The electron transport of the armchair-edge heterostructure device shows ballistic transport properties, while the zigzag-edge heterostructure device exhibits resonance tunneling transport properties. Further study indicates NbS2-MoS2-NbS2field effect transistors (FETs) to be excellent ambipolar transistors. The FETs have high performances with current on/off ratio 4.7 × 105and subthreshold swing 90 mV/decade with channel length m = 16 and width n = 6.  Increases in the channel length sharply reduce the off-state current and enhance the performance of the devices significantly.
authors.affiliation: School of Physics and Electronics, and Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, People's Republic of China.
authors.forename: Qi
authors.initials: Q
authors.lastname: Liu
authors.forename: Fangping
authors.initials: F
authors.lastname: Ouyang
authors.forename: Zhixiong
authors.initials: Z
authors.lastname: Yang
authors.forename: Shenglin
authors.initials: S
authors.lastname: Peng
authors.forename: Wenzhe
authors.initials: W
authors.lastname: Zhou
authors.forename: Hui
authors.initials: H
authors.lastname: Zou
authors.forename: Mengqiu
authors.initials: M
authors.lastname: Long
authors.forename: Jiangling
authors.initials: J
authors.lastname: Pan