title: Compound Homojunction:Heterojunction Reduces Bulk and Interface Recombination in ZnO Photoanodes for Water Splitting.
abstract: Photoelectrochemical water splitting is far more efficient thanks to the novel ZnOSe/ZnO/BZO thin-film photoanodes fabricated in this work. A novel structure is developed for simultaneously suppressing the charge recombination in the ZnO bulk and at the semiconductor-electrolyte interface. This structure achieves a five-fold enhancement in water-splitting performance, compared to that of pristine ZnO photoanodes, when illuminated using visible light.
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Ning
authors.initials: N
authors.lastname: Wang
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada.
authors.forename: Min
authors.initials: M
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada.|Photovoltaic Materials and Devices Laboratory, Delft University of Technology, 2628CD, Delft, The Netherlands.
authors.forename: Hairen
authors.initials: H
authors.lastname: Tan
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Junhui
authors.initials: J
authors.lastname: Liang
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Qixing
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Changchun
authors.initials: C
authors.lastname: Wei
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, Ontario, M5S 1A4, Canada.
authors.forename: Edward H
authors.initials: EH
authors.lastname: Sargent
authors.affiliation: Institute of Photoelectronic thin Film Devices and Technology of Nankai University, Key Laboratory of Photoelectronic Thin Film Devices and Technology, Collaborative Innovation Center of Chemical Science and Engineering, Nankai University, Tianjin, 300071, P. R. China.
authors.forename: Xiaodan
authors.initials: X
authors.lastname: Zhang
keywords: chemical vapor deposition; doping; photoanodes; photoelectrochemistry; structure-property relationships