title: Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions.
abstract: Germanium is a promising material for future very large scale integration transistors, due to its superior hole mobility. However, germanium-based devices typically suffer from high reverse junction leakage due to the low band-gap energy of 0.66 eV and therefore are characterized by high static power dissipation. In this paper, we experimentally demonstrate a solution to suppress the off-state leakage in germanium nanowire Schottky barrier transistors. Thereto, a device layout with two independent gates is used to induce an additional energy barrier to the channel that blocks the undesired carrier type. In addition, the polarity of the same doping-free device can be dynamically switched between p- and n-type. The shown germanium nanowire approach is able to outperform previous polarity-controllable device concepts on other material systems in terms of threshold voltages and normalized on-currents. The dielectric and Schottky barrier interface properties of the device are analyzed in detail. Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.|Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Jens
authors.identifier: 0000-0003-2972-438X
authors.initials: J
authors.lastname: Trommer
authors.affiliation: Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.|Institute of Semiconductor and Microsystems (IHM), TU Dresden , D-01062 Dresden, Germany.
authors.forename: André
authors.initials: A
authors.lastname: Heinzig
authors.affiliation: Dresden Center for Nanoanalysis (DCN), TU Dresden , D-01062 Dresden, Germany.|Fraunhofer Institute for Ceramic Technologies and Systems (IKTS) , D-01277 Dresden, Germany.
authors.forename: Uwe
authors.initials: U
authors.lastname: Mühle
authors.affiliation: Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.|Dresden Center for Nanoanalysis (DCN), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Markus
authors.initials: M
authors.lastname: Löffler
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.
authors.forename: Annett
authors.initials: A
authors.lastname: Winzer
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.
authors.forename: Paul M
authors.initials: PM
authors.lastname: Jordan
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.
authors.forename: Jürgen
authors.initials: J
authors.lastname: Beister
authors.affiliation: Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.|Institute of Semiconductor and Microsystems (IHM), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Tim
authors.initials: T
authors.lastname: Baldauf
authors.affiliation: Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.|Institute of Semiconductor and Microsystems (IHM), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Marion
authors.initials: M
authors.lastname: Geidel
authors.affiliation: Institute of Semiconductor and Microsystems (IHM), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Barbara
authors.initials: B
authors.lastname: Adolphi
authors.affiliation: Fraunhofer Institute for Ceramic Technologies and Systems (IKTS) , D-01277 Dresden, Germany.
authors.forename: Ehrenfried
authors.initials: E
authors.lastname: Zschech
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.|Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.|Institute of Semiconductor and Microsystems (IHM), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Thomas
authors.identifier: 0000-0003-3814-0378
authors.initials: T
authors.lastname: Mikolajick
authors.affiliation: NaMLab gGmbH , Noethnitzer Straße 64, D-01187 Dresden, Germany.|Center for Advancing Electronics Dresden (CfAED), TU Dresden , D-01062 Dresden, Germany.
authors.forename: Walter M
authors.initials: WM
authors.lastname: Weber
keywords: Schottky barrier; ambipolar transistors; germanium nanowire; junction leakage suppression; low-band-gap; multigate; polarity control; reconfigurable field effect transistors; reprogrammable logic; temperature-dependent measurement