title: Switching from Negative to Positive Photoconductivity toward Intrinsic Photoelectric Response in InAs Nanowire.
abstract: Negative photoconductivity (NPC) and positive photoconductivity (PPC) are observed in the same individual InAs nanowires grown by metal-organic chemical vapor deposition. NPC displays under weak light illumination due to photoexcitation scattering centers charged with hot carrier in the native oxide layer. PPC is observed under high light intensity. Through removing the native oxide layer and passivating the nanowire with HfO2, we eliminate the NPC effect and realize intrinsic photoelectric response in InAs nanowire.
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
authors.forename: Yuxiang
authors.initials: Y
authors.lastname: Han
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
authors.forename: Mengqi
authors.initials: M
authors.lastname: Fu
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Tang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Zheng
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.|College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Xianghai
authors.initials: X
authors.lastname: Ji
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.|College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Xiaoye
authors.initials: X
authors.lastname: Wang
authors.affiliation: Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Weijian
authors.initials: W
authors.lastname: Lin
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences , Beijing 100083, China.|College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences , Beijing 100049, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Yang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University , Beijing 100871, China.
authors.forename: Qing
authors.identifier: http://orcid.org/0000-0002-7919-5159
authors.initials: Q
authors.lastname: Chen
keywords: InAs nanowire; NPC; PPC; carrier scattering; intrinsic photoelectric response