title: Distinct Electronic Structure for the Extreme Magnetoresistance in YSb.
abstract: An extreme magnetoresistance (XMR) has recently been observed in several nonmagnetic semimetals. Increasing experimental and theoretical evidence indicates that the XMR can be driven by either topological protection or electron-hole compensation. Here, by investigating the electronic structure of a XMR material, YSb, we present spectroscopic evidence for a special case which lacks topological protection and perfect electron-hole compensation. Further investigations reveal that a cooperative action of a substantial difference between electron and hole mobility and a moderate carrier compensation might contribute to the XMR in YSb.
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Junfeng
authors.initials: J
authors.lastname: He
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Chaofan
authors.initials: C
authors.lastname: Zhang
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Nirmal J
authors.initials: NJ
authors.lastname: Ghimire
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Tian
authors.initials: T
authors.lastname: Liang
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Chunjing
authors.initials: C
authors.lastname: Jia
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.|School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, People's Republic of China.|Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: Juan
authors.initials: J
authors.lastname: Jiang
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Shujie
authors.initials: S
authors.lastname: Tang
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Sudi
authors.initials: S
authors.lastname: Chen
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Yu
authors.initials: Y
authors.lastname: He
authors.affiliation: Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA.
authors.forename: S-K
authors.initials: SK
authors.lastname: Mo
authors.affiliation: Pohang Accelerator Laboratory, Pohang University of Science and Technology, Pohang 790-784, Korea.
authors.forename: C C
authors.initials: CC
authors.lastname: Hwang
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
authors.forename: M
authors.initials: M
authors.lastname: Hashimoto
authors.affiliation: Stanford Synchrotron Radiation Lightsource, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.
authors.forename: D H
authors.initials: DH
authors.lastname: Lu
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: B
authors.initials: B
authors.lastname: Moritz
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: T P
authors.initials: TP
authors.lastname: Devereaux
authors.affiliation: School of Physical Science and Technology, ShanghaiTech University, Shanghai 200031, People's Republic of China.|Physics Department, University of Oxford, Oxford OX1 3PU, United Kingdom.
authors.forename: Y L
authors.initials: YL
authors.lastname: Chen
authors.affiliation: Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: J F
authors.initials: JF
authors.lastname: Mitchell
authors.affiliation: Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, 2575 Sand Hill Road, Menlo Park, California 94025, USA.|Geballe Laboratory for Advanced Materials, Departments of Physics and Applied Physics, Stanford University, Stanford, California 94305, USA.
authors.forename: Z-X
authors.initials: ZX
authors.lastname: Shen