title: Large-scale synthesis of uniform hexagonal boron nitride films by plasma-enhanced atomic layer deposition.
abstract: Hexagonal boron nitride (h-BN) has been previously manufactured using mechanical exfoliation and chemical vapor deposition methods, which make the large-scale synthesis of uniform h-BN very challenging. In this study, we produced highly uniform and scalable h-BN films by plasma-enhanced atomic layer deposition, which were characterized by various techniques including atomic force microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray diffraction. The film composition studied by X-ray photoelectron spectroscopy and Auger electron spectroscopy corresponded to a B:N stoichiometric ratio close to 1:1, and the band-gap value (5.65 eV) obtained by electron energy loss spectroscopy was consistent with the dielectric properties. The h-BN-containing capacitors were characterized by highly uniform properties, a reasonable dielectric constant (3), and low leakage current density, while graphene on h-BN substrates exhibited enhanced electrical performance such as the high carrier mobility and neutral Dirac voltage, which resulted from the low density of charged impurities on the h-BN surface.
authors.affiliation: School of Electrical Engineering, Center for Advanced Materials Discovery for 3D Display, Graphene/2D Materials Research Center, KAIST, Daejeon 34141, Republic of Korea.
authors.forename: Hamin
authors.initials: H
authors.lastname: Park
authors.affiliation: School of Electrical Engineering, Center for Advanced Materials Discovery for 3D Display, Graphene/2D Materials Research Center, KAIST, Daejeon 34141, Republic of Korea.
authors.forename: Tae Keun
authors.initials: TK
authors.lastname: Kim
authors.affiliation: DNF Co., Ltd., Daejeon 34366, Republic of Korea.
authors.forename: Sung Woo
authors.initials: SW
authors.lastname: Cho
authors.affiliation: DNF Co., Ltd., Daejeon 34366, Republic of Korea.
authors.forename: Hong Seok
authors.initials: HS
authors.lastname: Jang
authors.affiliation: DNF Co., Ltd., Daejeon 34366, Republic of Korea.
authors.forename: Sang Ick
authors.initials: SI
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, Center for Advanced Materials Discovery for 3D Display, Graphene/2D Materials Research Center, KAIST, Daejeon 34141, Republic of Korea.
authors.forename: Sung-Yool
authors.initials: SY
authors.lastname: Choi