title: Tunable electrical properties of multilayer HfSe2field effect transistors by oxygen plasma treatment.
abstract: HfSe2field effect transistors are systematically studied in order to selectively tune their electrical properties by optimizing layer thickness and oxygen plasma treatment. The optimized plasma-treated HfSe2field effect transistors showed a high on/off ratio improvement of four orders of magnitude, from 27 to 105, a field effect mobility increase from 2.16 to 3.04 cm2V-1s-1, a subthreshold swing improvement from 30.6 to 4.8 V dec-1, and a positive threshold voltage shift between depletion mode and enhancement mode, from -7.02 to 11.5 V. The plasma-treated HfSe2photodetector also demonstrates a reasonable photoresponsivity from the visible to the near-infrared region of light.
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu and Manufacturing Engineering Team, Memory Division, Samsung Electronics Co., Hwasung 18448, Republic of Korea.
authors.forename: Moonshik
authors.initials: M
authors.lastname: Kang
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Servin
authors.initials: S
authors.lastname: Rathi
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Inyeal
authors.initials: I
authors.lastname: Lee
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Lijun
authors.initials: L
authors.lastname: Li
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Muhammad Atif
authors.initials: MA
authors.lastname: Khan
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Dongsuk
authors.initials: D
authors.lastname: Lim
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Yoontae
authors.initials: Y
authors.lastname: Lee
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Jinwoo
authors.initials: J
authors.lastname: Park
authors.affiliation: ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea.
authors.forename: Sun Jin
authors.initials: SJ
authors.lastname: Yun
authors.affiliation: ICT Components and Materials Technology Research Division, Electronics and Telecommunications Research Institute, Daejeon 34129, Republic of Korea.
authors.forename: Doo-Hyeb
authors.initials: DH
authors.lastname: Youn
authors.affiliation: Manufacturing Engineering Team, Memory Division, Samsung Electronics Co., Hwasung 18448, Republic of Korea.
authors.forename: Chungsam
authors.initials: C
authors.lastname: Jun
authors.affiliation: College of Information and Communication Engineering and Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, Republic of Korea. ghkim@skku.edu.
authors.forename: Gil-Ho
authors.initials: GH
authors.lastname: Kim