title: Construction of Compact Methylammonium Bismuth Iodide Film Promoting Lead-Free Inverted Planar Heterojunction Organohalide Solar Cells with Open-Circuit Voltage over 0.8 V.
abstract: A bismuth-based organohalide material, methylammonium bismuth iodide (MA3Bi2I9), has been recently explored as an efficient lead-free light absorber in photovoltaic applications. However, the poor surface morphology of the MA3Bi2I9film fabricated via conventional one-step spin-coating methods has limited the performance of the device. In this work, a smooth, uniform, and compact MA3Bi2I9thin film was realized by a novel two-step evaporation-spin-coating film fabrication strategy for the first time. Taking advantage of the superior MA3Bi2I9thin film, the best-performing inverted planar heterojuncion photovoltaic device exhibited a power conversion efficiency of 0.39% with open-circuit voltage as high as 0.83 V, which demonstrated the lowest loss-in-potential to date in MA3Bi2I9-based solar cells. Moreover, the facile film fabrication strategy utilized in this work paves the way for high reproducibility of lead-free organohalide films and devices.
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Chenxin
authors.initials: C
authors.lastname: Ran
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Zhaoxin
authors.identifier: http://orcid.org/0000-0003-2979-3051
authors.initials: Z
authors.lastname: Wu
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Jun
authors.initials: J
authors.lastname: Xi
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Fang
authors.initials: F
authors.lastname: Yuan
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Hua
authors.initials: H
authors.lastname: Dong
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Ting
authors.initials: T
authors.lastname: Lei
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Xin
authors.initials: X
authors.lastname: He
authors.affiliation: Key Laboratory of Photonics Technology for Information, Key Laboratory for Physical Electronics and Devices of the Ministry of Education, School of Electronic and Information Engineering, Xi'an Jiaotong University , Xi'an 710049, PR China.
authors.forename: Xun
authors.initials: X
authors.lastname: Hou