title: Parametric Study of Amorphous High-Entropy Alloys formation from two New Perspectives: Atomic Radius Modification and Crystalline Structure of Alloying Elements.
abstract: Chemical and topological parameters have been widely used for predicting the phase selection in high-entropy alloys (HEAs). Nevertheless, previous studies could be faulted due to the small number of available data points, the negligence of kinetic effects, and the insensitivity to small compositional changes. Here in this work, 92 TiZrHfM, TiZrHfMM, TiZrHfMMM (M = Fe, Cr, V, Nb, Al, Ag, Cu, Ni) HEAs were prepared by melt spinning, to build a reliable and sufficiently large material database to inspect the robustness of previously established parameters. Modification of atomic radii by considering the change of local electronic environment in alloys, was critically found out to be superior in distinguishing the formation of amorphous and crystalline alloys, when compared to using atomic radii of pure elements in topological parameters. Moreover, crystal structures of alloying element were found to play an important role in the amorphous phase formation, which was then attributed to how alloying hexagonal-close-packed elements and face-centered-cubic or body-centered-cubic elements can affect the mixing enthalpy. Findings from this work not only provide parametric studies for HEAs with new and important perspectives, but also reveal possibly a hidden connection among some important concepts in various fields.
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Q
authors.initials: Q
authors.lastname: Hu
authors.affiliation: Surface and Microstructure Engineering Group, Materials and Manufacturing Technology, Chalmers University of Technology, SE-41296, Gothenburg, Sweden.
authors.forename: S
authors.initials: S
authors.lastname: Guo
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: J M
authors.initials: JM
authors.lastname: Wang
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: Y H
authors.initials: YH
authors.lastname: Yan
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: S S
authors.initials: SS
authors.lastname: Chen
authors.affiliation: Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang, 330029, China.
authors.forename: D P
authors.initials: DP
authors.lastname: Lu
authors.affiliation: Institute of Applied Physics, Jiangxi Academy of Sciences, Nanchang, 330029, China.
authors.forename: K M
authors.initials: KM
authors.lastname: Liu
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: J Z
authors.initials: JZ
authors.lastname: Zou
authors.affiliation: Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, China.
authors.forename: X R
authors.initials: XR
authors.lastname: Zeng