title: Level Spectrum and Charge Relaxation in a Silicon Double Quantum Dot Probed by Dual-Gate Reflectometry.
abstract: We report on dual-gate reflectometry in a metal-oxide-semiconductor double-gate silicon transistor operating at low temperature as a double quantum dot device. The reflectometry setup consists of two radio frequency resonators respectively connected to the two gate electrodes. By simultaneously measuring their dispersive responses, we obtain the complete charge stability diagram of the device. Electron transitions between the two quantum dots and between each quantum dot and either the source or the drain contact are detected through phase shifts in the reflected radio frequency signals. At finite bias, reflectometry allows probing charge transitions to excited quantum-dot states, thereby enabling direct access to the energy level spectra of the quantum dots. Interestingly, we find that in the presence of electron transport across the two dots the reflectometry signatures of interdot transitions display a dip-peak structure containing quantitative information on the charge relaxation rates in the double quantum dot.
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.|Dipartimento di Scienza dei Materiali, Università di Milano Bicocca , Via Cozzi 53, 20125 Milano, Italy.|CNR-IMM , Via C. Olivetti 2, 20864 Agrate Brianza (MB), Italy.
authors.forename: Alessandro
authors.identifier: 0000-0002-2968-611X
authors.initials: A
authors.lastname: Crippa
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Romain
authors.initials: R
authors.lastname: Maurand
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Dharmraj
authors.initials: D
authors.lastname: Kotekar-Patil
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Andrea
authors.initials: A
authors.lastname: Corna
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.|CEA , LETI MINATEC Campus, F-38000 Grenoble, France.
authors.forename: Heorhii
authors.initials: H
authors.lastname: Bohuslavskyi
authors.affiliation: Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States.
authors.forename: Alexei O
authors.initials: AO
authors.lastname: Orlov
authors.affiliation: Department of Electrical Engineering, University of Notre Dame , Notre Dame, Indiana 46556, United States.
authors.forename: Patrick
authors.initials: P
authors.lastname: Fay
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.|CEA , LETI MINATEC Campus, F-38000 Grenoble, France.
authors.forename: Romain
authors.initials: R
authors.lastname: Laviéville
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.|CEA , LETI MINATEC Campus, F-38000 Grenoble, France.
authors.forename: Sylvain
authors.initials: S
authors.lastname: Barraud
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.|CEA , LETI MINATEC Campus, F-38000 Grenoble, France.
authors.forename: Maud
authors.initials: M
authors.lastname: Vinet
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Marc
authors.initials: M
authors.lastname: Sanquer
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Silvano
authors.initials: S
authors.lastname: De Franceschi
authors.affiliation: Université Grenoble Alpes and CEA INAC-PHELIQS , F-38000 Grenoble, France.
authors.forename: Xavier
authors.initials: X
authors.lastname: Jehl
keywords: Dispersive readout; charge relaxation; double quantum dot; high-frequency resonator; reflectometry; silicon