title: PTCDA growth on Ge(111)-[Formula: see text] surfaces: a scanning tunneling microscopy study.
abstract: The initial stages of growth of PTCDA (3,4,9,10 perylene tetracarboxylic dianhydride) at room temperature (RT) on Ge(111)-[Formula: see text] surfaces have been studied by means of scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. The results show that PTCDA molecules have a high mobility at RT on the well ordered areas of the semiconductor substrate, since nucleation is only observed in domain walls, steps and surface defects. However, no molecular ordering has been detected at submonolayer coverage. For higher coverages, the formation of three-dimensional (3D) molecular islands has been observed. These 3D islands present a crystalline nature as demostrated by molecularly resolved STM images. According to these STM measurements, PTCDA molecules are ordered in a herringbone structure, similar to the one observed in PTCDA bulk crystals. Moreover, the 3D crystallites are grown on top of a disordered molecular layer, which acts as a passivating layer.
authors.affiliation: Departamento de Física de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain.
authors.forename: A J
authors.initials: AJ
authors.lastname: Martínez-Galera
authors.forename: Z
authors.initials: Z
authors.lastname: Wei
authors.forename: N
authors.initials: N
authors.lastname: Nicoara
authors.forename: I
authors.initials: I
authors.lastname: Brihuega
authors.forename: J M
authors.initials: JM
authors.lastname: Gómez-Rodríguez