title: Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors.
abstract: The recent discovery of ferroelectricity in thin hafnium oxide films has led to a resurgence of interest in ferroelectric memory devices. Although both experimental and theoretical studies on this new ferroelectric system have been undertaken, much remains to be unveiled regarding its domain landscape and switching kinetics. Here we demonstrate that the switching of single domains can be directly observed in ultrascaled ferroelectric field effect transistors. Using models of ferroelectric domain nucleation we explain the time, field and temperature dependence of polarization reversal. A simple stochastic model is proposed as well, relating nucleation processes to the observed statistical switching behavior. Our results suggest novel opportunities for hafnium oxide based ferroelectrics in nonvolatile memory devices.
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.
authors.forename: Halid
authors.identifier: http://orcid.org/0000-0001-9524-5112
authors.initials: H
authors.lastname: Mulaosmanovic
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.
authors.forename: Johannes
authors.initials: J
authors.lastname: Ocker
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.
authors.forename: Stefan
authors.initials: S
authors.lastname: Müller
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.
authors.forename: Uwe
authors.initials: U
authors.lastname: Schroeder
authors.affiliation: Fraunhofer IPMS-CNT , 01099 Dresden, Germany.
authors.forename: Johannes
authors.initials: J
authors.lastname: Müller
authors.affiliation: Fraunhofer IPMS-CNT , 01099 Dresden, Germany.
authors.forename: Patrick
authors.initials: P
authors.lastname: Polakowski
authors.affiliation: GLOBALFOUNDRIES , 01109 Dresden, Germany.
authors.forename: Stefan
authors.initials: S
authors.lastname: Flachowsky
authors.affiliation: GLOBALFOUNDRIES , 01109 Dresden, Germany.
authors.forename: Ralf
authors.initials: R
authors.lastname: van Bentum
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.|Chair of Nanoelectronic Materials, TU Dresden , 01062 Dresden, Germany.
authors.forename: Thomas
authors.identifier: http://orcid.org/0000-0003-3814-0378
authors.initials: T
authors.lastname: Mikolajick
authors.affiliation: NaMLab gGmbH , 01187 Dresden, Germany.
authors.forename: Stefan
authors.initials: S
authors.lastname: Slesazeck
keywords: domain; ferroelectric switching; field-effect transistor; hafnium oxide; nucleation