title: Homoepitaxial Growth of Metal Halide Crystals Investigated by Reflection High-Energy Electron Diffraction.
abstract: We report the homoepitaxial growth of a metal halide on single crystals investigated with in situ reflection high-energy electron diffraction (RHEED) and ex situ atomic force microscopy (AFM). Epitaxial growth of NaCl on NaCl (001) is explored as a function of temperature and growth rate which provides the first detailed report of RHEED oscillations for metal halide growth. Layer-by-layer growth is observed at room temperature accompanied by clear RHEED oscillations while the growth mode transitions to an island (3D) mode at low temperature. At higher temperatures (>100 °C), RHEED oscillations and AFM data indicate a transition to a step-flow growth mode. To show the importance of such metal halide growth, green organic light-emitting diodes (OLEDs) are demonstrated using a doped NaCl film with a phosphorescent emitter as the emissive layer. This study demonstrates the ability to perform in situ and non-destructive RHEED monitoring even on insulating substrates and could enable doped single crystals and crystalline substrates for a range of optoelectronic applications.
authors.affiliation: Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA.
authors.forename: Pei
authors.initials: P
authors.lastname: Chen
authors.affiliation: Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA.
authors.forename: Padmanaban S
authors.initials: PS
authors.lastname: Kuttipillai
authors.affiliation: Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA.
authors.forename: Lili
authors.initials: L
authors.lastname: Wang
authors.affiliation: Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA.|Department of Physics and Astronomy, Michigan State University, East Lansing, MI, 48824, USA.
authors.forename: Richard R
authors.initials: RR
authors.lastname: Lunt