title: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies.
abstract: Resistive switching processes in HfO2are studied by electron holography and in situ energy-filtered imaging. The results show that oxygen vacancies are gradually generated in the oxide layer under ramped electrical bias, and finally form several conductive channels connecting the two electrodes. It also shows that the switching process occurs at the top interface of the hafnia layer.
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Chao
authors.initials: C
authors.lastname: Li
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Bin
authors.initials: B
authors.lastname: Gao
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Yao
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Xiangxiang
authors.initials: X
authors.lastname: Guan
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Xi
authors.initials: X
authors.lastname: Shen
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Yanguo
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: Huang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Liu
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Li
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
authors.forename: Changzhi
authors.initials: C
authors.lastname: Gu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Jinfeng
authors.initials: J
authors.lastname: Kang
authors.affiliation: Beijing National Laboratory of Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, P. R. China.|School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Richeng
authors.initials: R
authors.lastname: Yu
keywords: electron holography; energy-filtered image; in situ TEM; oxygen vacancies; resistive switching