title: Low-Frequency Electronic Noise in Quasi-1D TaSe3van der Waals Nanowires.
abstract: We report results of investigation of the low-frequency electronic excess noise in quasi-1D nanowires of TaSe3capped with quasi-2D h-BN layers. Semimetallic TaSe3is a quasi-1D van der Waals material with exceptionally high breakdown current density. It was found that TaSe3nanowires have lower levels of the normalized noise spectral density, SI/I2, compared to carbon nanotubes and graphene (I is the current). The temperature-dependent measurements revealed that the low-frequency electronic 1/f noise becomes the 1/f2type as temperature increases to ∼400 K, suggesting the onset of electromigration (f is the frequency). Using the Dutta-Horn random fluctuation model of the electronic noise in metals, we determined that the noise activation energy for quasi-1D TaSe3nanowires is approximately EP≈ 1.0 eV. In the framework of the empirical noise model for metallic interconnects, the extracted activation energy, related to electromigration is EA= 0.88 eV, consistent with that for Cu and Al interconnects. Our results shed light on the physical mechanism of low-frequency 1/f noise in quasi-1D van der Waals semimetals and suggest that such material systems have potential for ultimately downscaled local interconnect applications.
authors.affiliation: Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, University of California, Riverside , Riverside, California 92521, United States.
authors.forename: Guanxiong
authors.identifier: 0000-0001-8695-8671
authors.initials: G
authors.lastname: Liu
authors.affiliation: Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.|Ioffe Institute, St. Petersburg 194021, Russia.
authors.forename: Sergey
authors.initials: S
authors.lastname: Rumyantsev
authors.affiliation: Department of Chemistry, University of Georgia , Athens, Georgia 30602, United States.
authors.forename: Matthew A
authors.initials: MA
authors.lastname: Bloodgood
authors.affiliation: Department of Chemistry, University of Georgia , Athens, Georgia 30602, United States.
authors.forename: Tina T
authors.initials: TT
authors.lastname: Salguero
authors.affiliation: Department of Electrical, Computer, and Systems Engineering, Center for Integrated Electronics, Rensselaer Polytechnic Institute , Troy, New York 12180, United States.
authors.forename: Michael
authors.initials: M
authors.lastname: Shur
authors.affiliation: Nano-Device Laboratory (NDL) and Phonon Optimized Engineered Materials (POEM) Center, Department of Electrical and Computer Engineering, University of California, Riverside , Riverside, California 92521, United States.
authors.forename: Alexander A
authors.initials: AA
authors.lastname: Balandin
keywords: Quasi-1D; interconnects; low-frequency noise; reliability; van der Waals materials