title: Purely antiferromagnetic magnetoelectric random access memory.
abstract: Magnetic random access memory schemes employing magnetoelectric coupling to write binary information promise outstanding energy efficiency. We propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM) that offers a remarkable 50-fold reduction of the writing threshold compared with ferromagnet-based counterparts, is robust against magnetic disturbances and exhibits no ferromagnetic hysteresis losses. Using the magnetoelectric antiferromagnet Cr2O3, we demonstrate reliable isothermal switching via gate voltage pulses and all-electric readout at room temperature. As no ferromagnetic component is present in the system, the writing magnetic field does not need to be pulsed for readout, allowing permanent magnets to be used. Based on our prototypes, we construct a comprehensive model of the magnetoelectric selection mechanisms in thin films of magnetoelectric antiferromagnets, revealing misfit induced ferrimagnetism as an important factor. Beyond memory applications, the AF-MERAM concept introduces a general all-electric interface for antiferromagnets and should find wide applicability in antiferromagnetic spintronics.
authors.affiliation: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.|Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Tobias
authors.initials: T
authors.lastname: Kosub
authors.affiliation: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.|Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Kopte
authors.affiliation: Institute for Metallic Materials, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden.
authors.forename: Ruben
authors.initials: R
authors.lastname: Hühne
authors.affiliation: Department of Physics, University of Basel, 4056 Basel, Switzerland.
authors.forename: Patrick
authors.initials: P
authors.lastname: Appel
authors.affiliation: Department of Physics, University of Basel, 4056 Basel, Switzerland.
authors.forename: Brendan
authors.initials: B
authors.lastname: Shields
authors.affiliation: Department of Physics, University of Basel, 4056 Basel, Switzerland.
authors.forename: Patrick
authors.identifier: 0000-0003-1699-388X
authors.initials: P
authors.lastname: Maletinsky
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: René
authors.initials: R
authors.lastname: Hübner
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Radiation Physics, 01328 Dresden, Germany.
authors.forename: Maciej Oskar
authors.initials: MO
authors.lastname: Liedke
authors.affiliation: Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Jürgen
authors.initials: J
authors.lastname: Fassbender
authors.affiliation: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.
authors.forename: Oliver G
authors.initials: OG
authors.lastname: Schmidt
authors.affiliation: Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.|Helmholtz-Zentrum Dresden-Rossendorf e.V., Institute of Ion Beam Physics and Materials Research, 01328 Dresden, Germany.
authors.forename: Denys
authors.initials: D
authors.lastname: Makarov