title: Demonstration of Logic Operations in High-Performance RRAM Crossbar Array Fabricated by Atomic Layer Deposition Technique.
abstract: In this paper, resistive random access memory (RRAM)-based crossbar arrays with the cell structure of Pt/[AlOy/HfOx]m/TiN were fabricated by using atomic layer deposition (ALD) technique. The RRAM devices in the arrays show excellent performances such as good uniformity and high reliability. Based on the fabricated RRAM array, a complete set of basic logic operations including NOR and XNOR were successfully demonstrated.
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Runze
authors.initials: R
authors.lastname: Han
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Huang
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Yudi
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Zhe
authors.initials: Z
authors.lastname: Chen
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Lifeng
authors.initials: L
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China.
authors.forename: Xiaoyan
authors.initials: X
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, Beijing, 100871, China. kangjf@pku.edu.cn.
authors.forename: Jinfeng
authors.identifier: http://orcid.org/0000-0002-2207-1091
authors.initials: J
authors.lastname: Kang
keywords: Atomic layer deposition (ALD); Crossbar; Logic operation; RRAM