title: Three-Dimensional Integrated Circuit (3D IC) Key Technology: Through-Silicon Via (TSV).
abstract: 3D integration with through-silicon via (TSV) is a promising candidate to perform system-level integration with smaller package size, higher interconnection density, and better performance. TSV fabrication is the key technology to permit communications between various strata of the 3D integration system. TSV fabrication steps, such as etching, isolation, metallization processes, and related failure modes, as well as other characterizations are discussed in this invited review paper.
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan.
authors.forename: Wen-Wei
authors.initials: WW
authors.lastname: Shen
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu, 300, Taiwan. knchen@mail.nctu.edu.tw.
authors.forename: Kuan-Neng
authors.identifier: http://orcid.org/0000-0003-4316-0007
authors.initials: KN
authors.lastname: Chen
keywords: Three-dimensional integrated circuit (3D IC); Through-silicon via (TSV)