title: Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.
abstract: This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.
authors.affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec.3, Chung-Hsiao E. Rd, Taipei, 106, Taiwan. ocean@ntut.edu.tw.
authors.forename: Lung-Chien
authors.initials: LC
authors.lastname: Chen
authors.affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec.3, Chung-Hsiao E. Rd, Taipei, 106, Taiwan.
authors.forename: Wun-Wei
authors.initials: WW
authors.lastname: Lin
authors.affiliation: Department of Electro-optical Engineering, National Taipei University of Technology, 1, Sec.3, Chung-Hsiao E. Rd, Taipei, 106, Taiwan.
authors.forename: Te-Yu
authors.initials: TY
authors.lastname: Liu
keywords: KOH; Laser lift-off; Nanorods; Photo-enhanced post-annealing