title: Room-temperature Fabry-Perot resonances in suspended InGaAs/InP quantum-well nanopillars on a silicon substrate.
abstract: We present a new platform based on suspended III-V semiconductor nanopillars for direct integration of optoelectronic devices on a silicon substrate. Nanopillars grown in core-shell mode with InGaAs/InP quantum wells can support long-wavelength Fabry-Pérot resonances at room temperature with this novel configuration. Experimental results are demonstrated at a silicon-transparent wavelength of 1460 nm, facilitating integration with silicon platform.
authors.forename: Gilliard N
authors.initials: GN
authors.lastname: Malheiros-Silveira
authors.forename: Indrasen
authors.initials: I
authors.lastname: Bhattacharya
authors.forename: Saniya V
authors.initials: SV
authors.lastname: Deshpande
authors.forename: Daria
authors.initials: D
authors.lastname: Skuridina
authors.forename: Fanglu
authors.initials: F
authors.lastname: Lu
authors.forename: Connie J
authors.initials: CJ
authors.lastname: Chang-Hasnain