title: Large-scale 2D PbI2monolayers: experimental realization and their indirect band-gap related properties.
abstract: Large-scale PbI2monolayers and few layers with high crystallinity and a uniform hexagonal shape were synthesized via a facile physical vapour deposition (PVD) method. The transition from a direct band-gap in the bulk to an indirect band-gap in the monolayer is verified by photoluminescence (PL) spectra, optoelectronic properties, and first principle calculations.
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zmwei@semi.ac.cn jbli@semi.ac.cn.
authors.forename: Mianzeng
authors.identifier: http://orcid.org/0000-0003-0343-5248
authors.initials: M
authors.lastname: Zhong
authors.affiliation: CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China. liuxf@nanoctr.cn and School of Physics and Electronics, Shandong Normal University, Jinan 250014, China.
authors.forename: Shuai
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zmwei@semi.ac.cn jbli@semi.ac.cn.
authors.forename: Le
authors.initials: L
authors.lastname: Huang
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zmwei@semi.ac.cn jbli@semi.ac.cn.
authors.forename: Jingbi
authors.initials: J
authors.lastname: You
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zmwei@semi.ac.cn jbli@semi.ac.cn.
authors.forename: Zhongming
authors.identifier: http://orcid.org/0000-0002-6237-0993
authors.initials: Z
authors.lastname: Wei
authors.affiliation: CAS Center for Excellence in Nanoscience, CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing 100190, China. liuxf@nanoctr.cn.
authors.forename: Xinfeng
authors.initials: X
authors.lastname: Liu
authors.affiliation: Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zmwei@semi.ac.cn jbli@semi.ac.cn.
authors.forename: Jingbo
authors.initials: J
authors.lastname: Li