title: Observation of spin-polarized photoconductivity in (Ga,Mn)As/GaAs heterojunction without magnetic field.
abstract: In the absent of magnetic field, we have observed the anisotropic spin polarization degree of photoconduction (SPD-PC) in (Ga,Mn)As/GaAs heterojunction. We think three kinds of mechanisms contribute to the magnetic related signal, (i) (Ga,Mn)As self-producing due to the valence band polarization, (ii) unequal intensity of left and right circularly polarized light reaching to GaAs layer to excite unequal spin polarized carriers in GaAs layer, and (iii) (Ga,Mn)As as the spin filter layer for spin transport from GaAs to (Ga,Mn)As. Different from the previous experiments, the influence coming from the Zeeman splitting induced by an external magnetic field can be avoided here. While temperature dependence experiment indicates that the SPD-PC is mixed with the magnetic uncorrelated signals, which may come from current induced spin polarization.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Wu
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Yu
authors.initials: Y
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Hailong
authors.initials: H
authors.lastname: Wang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Li
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, and University of Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Yonghai
authors.initials: Y
authors.lastname: Chen