title: Highly Oriented SrTiO3Thin Film on Graphene Substrate.
abstract: Growth of perovskite oxide thin films on Si in crystalline form has long been a critical obstacle for the integration of multifunctional oxides into Si-based technologies. In this study, we propose pulsed laser deposition of a crystalline SrTiO3thin film on a Si using graphene substrate. The SrTiO3thin film on graphene has a highly (00l)-oriented crystalline structure which results from the partial epitaxy. Moreover, graphene promotes a sharp interface by highly suppressing the chemical intermixing. The important role of graphene as a 2D substrate and diffusion barrier allows the expansion of device applications based on functional complex oxides.
authors.forename: Sang A
authors.initials: SA
authors.lastname: Lee
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea.
authors.forename: Jae-Yeol
authors.initials: JY
authors.lastname: Hwang
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea.
authors.forename: Eun Sung
authors.initials: ES
authors.lastname: Kim
authors.forename: Sung Wng
authors.identifier: http://orcid.org/0000-0002-4802-5421
authors.initials: SW
authors.lastname: Kim
authors.forename: Woo Seok
authors.identifier: http://orcid.org/0000-0002-2872-6191
authors.initials: WS
authors.lastname: Choi
keywords: Si; SrTiO3; diffusion barrier; epitaxy; graphene; interface; pulsed laser deposition; thin film