title: Silane-Induced N-Polarity in Wires Probed by a Synchrotron Nanobeam.
abstract: Noncentrosymmetric one-dimensional structures are key driving forces behind advanced nanodevices. Owing to the critical role of silane injection in creating nanosized architectures, it has become a challenge to investigate the induced local lattice polarity in single GaN wires. Thus, if axial and radial structures are well-grown by a silane-mediated approach, an ideal model to study their polar orientations is formed. By combining synchrotron X-ray fluorescence and X-ray excited optical luminescence, we show here experimental evidence of the role of silane to promote the N-polarity, light emission, and elemental incorporation within single wires. In addition, our experiment demonstrates the ability to spatially examine carrier diffusion phenomena without electrical contacts, opening new avenues for further studies with simultaneous optical and elemental sensitivity at the nanoscale.
authors.affiliation: ESRF-The European Synchrotron , 71 Avenue des Martyrs, 38043 Grenoble, France.
authors.forename: Damien
authors.initials: D
authors.lastname: Salomon
authors.affiliation: Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, CEA, INAC, Université Grenoble Alpes , Grenoble, 38054, France.|Nanostructures and Synchrotron Radiation Laboratory, CEA, INAC-MEM-NRS, Grenoble Alpes University , Grenoble, 38054, France.|Institut d'Electronique Fondamentale, UMR 8622 CNRS, Université Paris Saclay , 91405 Orsay, France.
authors.forename: Agnes
authors.initials: A
authors.lastname: Messanvi
authors.affiliation: Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, CEA, INAC, Université Grenoble Alpes , Grenoble, 38054, France.|Nanostructures and Synchrotron Radiation Laboratory, CEA, INAC-MEM-NRS, Grenoble Alpes University , Grenoble, 38054, France.
authors.forename: Joël
authors.identifier: 0000-0002-4216-1166
authors.initials: J
authors.lastname: Eymery
authors.affiliation: ESRF-The European Synchrotron , 71 Avenue des Martyrs, 38043 Grenoble, France.|Consejo Superior de Investigaciones Científicas, Instituto de Ciencia de Materiales de Madrid , 28049-Cantoblanco, Spain.
authors.forename: Gema
authors.identifier: 0000-0002-4503-9385
authors.initials: G
authors.lastname: Martínez-Criado
keywords: GaN; doping; nanoprobe; polarity; synchrotron; wire