title: HfO2/porous anodic alumina composite films for multifunctional data storage media materials under electric field control.
abstract: New materials for achieving direct electric field control of ferromagnetism and resistance behavior are highly desirable in the development of multifunctional data storage devices. In this paper, HfO2nanoporous films have been fabricated on porous anodic alumina (PAA) substrates by DC-reactive magnetron sputtering. Electrically induced resistive switching (RS) and modulated room temperature ferromagnetism are simultaneously found in a Ag/HfO2/PAA/Al (Ag/HP/Al) heterostructure. The switching mechanism between low resistance state and high resistance state is generally attributed to the formation/rupture of conductive filaments which may consist of oxygen vacancies. The combination of the electric field control of magnetization change and RS makes HP films possible for the multifunctional data storage media materials.
authors.affiliation: College of Physics Science & Information Engineering, Hebei Normal University, Shijiazhuang 050024, People's Republic of China. Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang, Hebei, 050024, People's Republic of China.
authors.forename: Li-Qian
authors.initials: LQ
authors.lastname: Qi
authors.forename: Di-Ya
authors.initials: DY
authors.lastname: Pan
authors.forename: Jun-Qing
authors.initials: JQ
authors.lastname: Li
authors.forename: Li-Hu
authors.initials: LH
authors.lastname: Liu
authors.forename: Hui-Yuan
authors.initials: HY
authors.lastname: Sun