title: Optimization of InGaAs/InAlAs Avalanche Photodiodes.
abstract: In this paper, we report a two-dimensional (2D) simulation for InGaAs/InAlAs separate absorption, grading, charge, and multiplication avalanche photodiodes (SAGCM APDs) and study the effect of the charge layer and multiplication layer on the operating voltage ranges of APD. We find that with the increase of the thicknesses as well as the doping concentrations of the charge layer and the multiplication layer, the punchthrough voltage increases; with the increase of the doping concentrations of two layers and the thickness of the charge layer, the breakdown voltage decreases; with the increase of the thickness of the multiplication layer, the breakdown voltage first rapidly declines and then slightly rises.
authors.affiliation: School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China. junchen@suda.edu.cn.
authors.forename: Jun
authors.initials: J
authors.lastname: Chen
authors.affiliation: School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China.
authors.forename: Zhengyu
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China.
authors.forename: Min
authors.initials: M
authors.lastname: Zhu
authors.affiliation: Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Jintong
authors.initials: J
authors.lastname: Xu
authors.affiliation: Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China.
authors.forename: Xiangyang
authors.initials: X
authors.lastname: Li
keywords: Avalanche photodiodes (APDs); Breakdown voltage; Punchthrough voltage; Simulation