title: Magnetoresistance and Hall resistivity of semimetal WTe2ultrathin flakes.
abstract: This article reports the characterization of WTe2thin flake magnetoresistance and Hall resistivity. We found it does not exhibit magnetoresistance saturation when subject to high fields, in a manner similar to their bulk characteristics. The linearity of Hall resistivity in our devices confirms the compensation of electrons and holes. By relating experimental results to a classic two-band model, the lower magnetoresistance values in our samples is demonstrated to be caused by decreased carrier mobility. The dependence of mobility on temperature indicates the main role of optical phonon scattering at high temperatures. Our results provide more detailed information on carrier behavior and scattering mechanisms in WTe2thin films.
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University, Wuhan 430072, People's Republic of China. Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, Suzhou 215123, People's Republic of China.
authors.forename: Xin
authors.initials: X
authors.lastname: Luo
authors.forename: Chi
authors.initials: C
authors.lastname: Fang
authors.forename: Caihua
authors.initials: C
authors.lastname: Wan
authors.forename: Jialin
authors.initials: J
authors.lastname: Cai
authors.forename: Yong
authors.initials: Y
authors.lastname: Liu
authors.forename: Xiufeng
authors.initials: X
authors.lastname: Han
authors.forename: Zhihong
authors.initials: Z
authors.lastname: Lu
authors.forename: Wenhua
authors.initials: W
authors.lastname: Shi
authors.forename: Rui
authors.initials: R
authors.lastname: Xiong
authors.forename: Zhongming
authors.initials: Z
authors.lastname: Zeng