title: Green laser diodes with low threshold current density via interface engineering of InGaN/GaN quantum well active region.
abstract: By observing the morphology evolution of green InGaN/GaN quantum well (QW) and studying the catholuminescence (CL) property, we investigate indium-segregation-related defects that are formed at green InGaN/GaN QW interfaces. Meanwhile, we also propose the approach and suggest the mechanism to remove them for green InGaN/GaN QW grown on both GaN templates and free-standing GaN substrates. By engineering the interface of green InGaN/GaN QWs, we have achieved green laser diode (LD) structure with low threshold current density of 1.85 kA cm-2. The output power of the green LD is 58 mW at a current density of 6 kA cm-2under continuous-wave operation at room temperature.
authors.forename: Aiqin
authors.initials: A
authors.lastname: Tian
authors.forename: Jianping
authors.initials: J
authors.lastname: Liu
authors.forename: Liqun
authors.initials: L
authors.lastname: Zhang
authors.forename: ZengCheng
authors.initials: Z
authors.lastname: Li
authors.forename: Masao
authors.initials: M
authors.lastname: Ikeda
authors.forename: Shuming
authors.initials: S
authors.lastname: Zhang
authors.forename: Deyao
authors.initials: D
authors.lastname: Li
authors.forename: Pengyan
authors.initials: P
authors.lastname: Wen
authors.forename: Feng
authors.initials: F
authors.lastname: Zhang
authors.forename: Yang
authors.initials: Y
authors.lastname: Cheng
authors.forename: Xiaowang
authors.initials: X
authors.lastname: Fan
authors.forename: Hui
authors.initials: H
authors.lastname: Yang