title: Flexible and Wavelength-Selective MoS2Phototransistors with Monolithically Integrated Transmission Color Filters.
abstract: Color-selective or wavelength-tunable capability is a crucial feature for two-dimensional (2-D) semiconducting material-based image sensor applications. Here, we report on flexible and wavelength-selective molybdenum disulfide (MoS2) phototransistors using monolithically integrated transmission Fabry-Perot (F-P) cavity filters. The fabricated multilayer MoS2phototransistors on a polyarylate substrate exhibit decent electrical characteristics (μFE> 64.4 cm2/Vs, on/off ratio > 106), and the integrated F-P filters, being able to cover whole visible spectrum, successfully modulate the spectral response characteristics of MoS2phototransistors from ~495 nm (blue) to ~590 nm (amber). Furthermore, power dependence of both responsivity and specific detectivity shows similar trend with other reports, dominated by the photogating effect. When combined with large-area monolayer MoS2for optical property enhancement and array processing, our results can be further developed into ultra-thin flexible photodetectors for wearables, conformable image sensor, and other optoelectronic applications.
authors.affiliation: School of Electronic Engineering, Soongsil University, Seoul, 06938, South Korea.
authors.forename: Geonwook
authors.initials: G
authors.lastname: Yoo
authors.affiliation: Display Materials &Components Research Center, Korea Electronics Technology Institute, Gyeonggi 13509, South Korea.
authors.forename: Sol Lea
authors.initials: SL
authors.lastname: Choi
authors.affiliation: Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea.
authors.forename: Sang Jin
authors.initials: SJ
authors.lastname: Park
authors.affiliation: Department of Materials Science and Engineering, University of Illinois, Urbana-Champaign, Illinois 61801, USA.
authors.forename: Kyu-Tae
authors.initials: KT
authors.lastname: Lee
authors.affiliation: Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea.
authors.forename: Sanghyun
authors.initials: S
authors.lastname: Lee
authors.affiliation: Display Materials &Components Research Center, Korea Electronics Technology Institute, Gyeonggi 13509, South Korea.
authors.forename: Min Suk
authors.initials: MS
authors.lastname: Oh
authors.affiliation: Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea.
authors.forename: Junseok
authors.initials: J
authors.lastname: Heo
authors.affiliation: Department of Energy Systems Research, Ajou University, Suwon 16499, South Korea.|Department of Electrical and Computer Engineering, Ajou University, Suwon 16499, South Korea.
authors.forename: Hui Joon
authors.initials: HJ
authors.lastname: Park