title: Crystal growth of Dirac semimetal ZrSiS with high magnetoresistance and mobility.
abstract: High quality single crystal ZrSiS as a theoretically predicted Dirac semimetal has been grown successfully using a vapor phase transport method. The single crystals of tetragonal structure are easy to cleave into perfect square-shaped pieces due to the van der Waals bonding between the sulfur atoms of the quintuple layers. Physical property measurement results including resistivity, Hall coefficient (RH), and specific heat are reported. The transport and thermodynamic properties suggest a Fermi liquid behavior with two Fermi pockets at low temperatures. At T = 3 K and magnetic field of Hǁc up to 9 Tesla, large magneto-resistance up to 8500% and 7200% for Iǁ(100)and Iǁ(110)were found. Shubnikov de Haas (SdH) oscillations were identified from the resistivity data, revealing the existence of two Fermi pockets at the Fermi level via the fast Fourier transform (FFT) analysis. The Hall coefficient (RH) showed hole-dominated carriers with a high mobility of 3.05 × 104cm2V-1s-1at 3 K. ZrSiS has been confirmed to be a Dirac semimetal by the Dirac cone mapping near the X-point via angle resolved photoemission spectroscopy (ARPES) with a Dirac nodal line near the Fermi level identified using scanning tunneling spectroscopy (STS).
authors.affiliation: Institute of Physics, Academia Sinica, Taipei, 10617, Taiwan.|Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Raman
authors.initials: R
authors.lastname: Sankar
authors.affiliation: Institute of Physics, Academia Sinica, Taipei, 10617, Taiwan.
authors.forename: G
authors.initials: G
authors.lastname: Peramaiyan
authors.affiliation: Institute of Physics, Academia Sinica, Taipei, 10617, Taiwan.|Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: I Panneer
authors.initials: IP
authors.lastname: Muthuselvam
authors.affiliation: Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: Christopher J
authors.initials: CJ
authors.lastname: Butler
authors.affiliation: Department of Physics, University of Central Florida, Orlando, Florida 32816, USA.
authors.forename: Klauss
authors.initials: K
authors.lastname: Dimitri
authors.affiliation: Department of Physics, University of Central Florida, Orlando, Florida 32816, USA.
authors.forename: Madhab
authors.initials: M
authors.lastname: Neupane
authors.affiliation: Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: G Narsinga
authors.initials: GN
authors.lastname: Rao
authors.affiliation: Department of Physics, National Taiwan University, Taipei 10617, Taiwan.
authors.forename: M-T
authors.initials: MT
authors.lastname: Lin
authors.affiliation: Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan.|National Synchrotron Radiation Research Center, Hsinchu 30076, Taiwan.|Taiwan Consortium of Emergent Crystalline Materials, Ministry of Science and Technology, Taipei 10622, Taiwan.
authors.forename: F C
authors.initials: FC
authors.lastname: Chou