title: Polarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector.
abstract: Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride (GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au nanoparticles (NPs) drastically increases the photoelectric responsivities by more than 50 times in comparition to the blank GaN photodetector. The observed behaviors are attributed to polarization enhanced charge transfer of optically excited hot electrons from Au NPs to GaN driven by the strong spontaneous polarization field of Ga-polar GaN. Moreover, defect ionization promoted by localized surface plasmon resonances (LSPRs) is also discussed. This novel type of photodetector may shed light on the design and fabrication of photoelectric devices based on polar semiconductors and microstructural defects.
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100, P. R. China.
authors.forename: Ran
authors.initials: R
authors.lastname: Jia
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100, P. R. China.
authors.forename: Dongfang
authors.initials: D
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100, P. R. China.
authors.forename: Naikun
authors.initials: N
authors.lastname: Gao
authors.affiliation: State Key Laboratory of Crystal Materials, Shandong University, 27 South Shanda Road, Jinan, Shandong 250100, P. R. China.
authors.forename: Duo
authors.initials: D
authors.lastname: Liu