title: Effect of gallium environment on infrared emission in Er3+-doped gallium- antimony- sulfur glasses.
abstract: Gallium-based Ga-Sb-S sulfide glasses was elaborated and studied. A relationship between the structure, composition, and optical properties of the glass has been established. The effects of the introduction of Ga on the structure using infrared and Raman spectroscopies and on the Er3+-doped IR emission have been discussed. The results show that incorporation of Ga induced the dissociation of [SbS3] pyramids units and the formation of tetrahedral [GaS4] units. The dissolved rare earth ions are separated around the Ga-S bonding and the infrared emission quenching are controlled. Moreover, continuous introduction of Er ions into the glass forms more Er-S bonds through the further aggregation surrounding the [GaS4] units. In return, the infrared emission intensity decreased with excessive Er ion addition. This phenomenon is correlated with the recurrence concentration quenching effect induced by the increase of [GaS4] units.
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Jiao
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.
authors.forename: Ge
authors.initials: G
authors.lastname: Li
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.
authors.forename: Lini
authors.initials: L
authors.lastname: Li
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Changgui
authors.initials: C
authors.lastname: Lin
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Guoxiang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Zijun
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Shixun
authors.initials: S
authors.lastname: Dai
authors.affiliation: Laboratory of Infrared Materials and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Tiefeng
authors.initials: T
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Luminescence Materials and Devices, South China University of Technology, Guangzhou 510641, China.
authors.forename: Qinyuan
authors.initials: Q
authors.lastname: Zhang