title: Lithography-Free Miniaturization of Resistive Nonvolatile Memory Devices to the 100 nm Scale by Glancing Angle Deposition.
abstract: The scaling of nonvolatile memory (NVM) devices based on resistive filament switching to below a 100 nm2footprint area without employing cumbersome lithography is demonstrated. Nanocolumns of the organic semiconductor 4,4-bis[N-(1-naphthyl)-N-phenyl-amino]diphenyl (α-NPD) were grown by glancing angle deposition on a silver electrode. Individual NVM devices were electrically characterized by conductive atomic force microscopy with the tip of a conductive cantilever serving as second electrode. The resistive switching mechanism is unambiguously attributed to Ag filament formation between the electrodes. This sets the upper limit for the filament diameter to well below 100 nm. Full functionality of these NVM nanodevices is evidenced, revealing a potential memory density of >1 GB/cm2in appropriate architectures.
authors.affiliation: Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , Brook-Taylor Str. 6, Berlin 12489, Germany.
authors.forename: Giovanni
authors.initials: G
authors.lastname: Ligorio
authors.affiliation: Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , Brook-Taylor Str. 6, Berlin 12489, Germany.
authors.forename: Marco Vittorio
authors.initials: MV
authors.lastname: Nardi
authors.affiliation: Institut für Physik and IRIS Adlershof, Humboldt-Universität zu Berlin , Brook-Taylor Str. 6, Berlin 12489, Germany.|Helmholtz-Zentrum Berlin für Materialien und Energie GmbH , Albert-Einstein Str. 15, Berlin 12489, Germany.
authors.forename: Norbert
authors.identifier: 0000-0002-6042-6447
authors.initials: N
authors.lastname: Koch
keywords: Nonvolatile memory; nanostructure growth; organic semiconductor