title: Controlled Growth of 1D MoSe2Nanoribbons with Spatially Modulated Edge States.
abstract: Two-dimensional (2D) transition metal dichalcogenides (TMDCs) possess interesting one-dimensional (1D) properties at its edges and inversion domain boundaries, where properties markedly different from the 2D basal plane, such as 1D metallicity and charge density waves, can be observed. Although 2D TMDCs crystals are widely grown by chemical vapor deposition (CVD), the fabrication of 1D TMDCs ribbons is challenging due to the difficulty to confine growth in only one dimension. Here we report the controlled growth of MoSe2nanoribbons with an aspect ratio >100 by using prepatterned Se reconstructions on Au(100). Using scanning tunneling microscope and spectroscopy (STM/STS), the atomic and electronic structure of MoSe2nanoribbons are studied. The ultranarrow ribbons show metallic behavior, while wider ribbons show a crossover from metallic to semiconducting behavior going from the edge to the center of the ribbon. The observed conductance modulations of the ultranarrow ribbons are attributed to 1D Moiré pattern. Remarkably, it shows a different periodicity compared with the 2D Moiré pattern in wider ribbons indicating that the 1D system is softened due to the high ratio of edge to basal plane bonds. Further, we demonstrated that the nanoribbons are stable against ambient conditions, which suggests that 1D TMDCs can be exploited for further applications.
authors.affiliation: Department of Chemistry, National University of Singapore , Singapore 117543.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Fang
authors.identifier: 0000-0003-1645-4237
authors.initials: F
authors.lastname: Cheng
authors.affiliation: Department of Chemistry, National University of Singapore , Singapore 117543.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Hai
authors.initials: H
authors.lastname: Xu
authors.affiliation: Department of Physics, National University of Singapore , Singapore 117551.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Wentao
authors.initials: W
authors.lastname: Xu
authors.affiliation: Department of Physics, National University of Singapore , Singapore 117551.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Pinjia
authors.initials: P
authors.lastname: Zhou
authors.affiliation: Department of Physics, National University of Singapore , Singapore 117551.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Jens
authors.initials: J
authors.lastname: Martin
authors.affiliation: Department of Chemistry, National University of Singapore , Singapore 117543.|Centre for Advanced 2D Materials and Graphene Research Centre, National University of Singapore , Singapore 117546.
authors.forename: Kian Ping
authors.identifier: 0000-0002-1491-743X
authors.initials: KP
authors.lastname: Loh
keywords: Moiré pattern; Transition metal dichalcogenides; edge state; molecular beam epitaxy; nanoribbon; scanning tunneling microscopy