title: Wafer-scale Thermodynamically Stable GaN Nanorods via Two-Step Self-Limiting Epitaxy for Optoelectronic Applications.
abstract: We present a method of epitaxially growing thermodynamically stable gallium nitride (GaN) nanorods via metal-organic chemical vapor deposition (MOCVD) by invoking a two-step self-limited growth (TSSLG) mechanism. This allows for growth of nanorods with excellent geometrical uniformity with no visible extended defects over a 100 mm sapphire (Al2O3) wafer. An ex-situ study of the growth morphology as a function of growth time for the two self-limiting steps elucidate the growth dynamics, which show that formation of an Ehrlich-Schwoebel barrier and preferential growth in the c-plane direction governs the growth process. This process allows monolithic formation of dimensionally uniform nanowires on templates with varying filling matrix patterns for a variety of novel electronic and optoelectronic applications. A color tunable phosphor-free white light LED with a coaxial architecture is fabricated as a demonstration of the applicability of these nanorods grown by TSSLG.
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Hyun
authors.initials: H
authors.lastname: Kum
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Han-Kyu
authors.initials: HK
authors.lastname: Seong
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Wantae
authors.initials: W
authors.lastname: Lim
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Daemyung
authors.initials: D
authors.lastname: Chun
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Young-Il
authors.initials: YI
authors.lastname: Kim
authors.affiliation: Semiconductor R&D Center Samsung Electronics Hwasung, South Korea.
authors.forename: Youngsoo
authors.initials: Y
authors.lastname: Park
authors.affiliation: School of Electronic Engineering Soongsil University Seoul, South Korea.
authors.forename: Geonwook
authors.initials: G
authors.lastname: Yoo