title: Black Phosphorus Quantum Dots for Hole Extraction of Typical Planar Hybrid Perovskite Solar Cells.
abstract: Black phosphorus, famous as two-dimensional (2D) materials, shows such excellent properties for optoelectronic devices such as tunable direct band gap, extremely high hole mobility (300-1000 cm2/(V s)), and so forth. In this Letter, facile processed black phosphorus quantum dots (BPQDs) were successfully applied to enhance hole extraction at the anode side of the typical p-i-n planar hybrid perovskite solar cells, which remarkably improved the performance of devices with photon conversion efficiency ramping up from 14.10 to 16.69%. Moreover, more detailed investigations by c-AFM, SKPM, SEM, hole-only devices, and photon physics measurements discover further the hole extraction effect and work mechanism of the BPQDs, such as nucleation assistance for the growth of large grain size perovskite crystals, fast hole extraction, more efficient hole transfer, and suppression of energy-loss recombination at the anode interface. This work definitely paves the way for discovering more and more 2D materials with high electronic properties to be used in photovoltaics and optoelectronics.
authors.affiliation: Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Wei
authors.initials: W
authors.lastname: Chen
authors.affiliation: Shenzhen Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School , No. 2199, Lishui Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Kaiwen
authors.initials: K
authors.lastname: Li
authors.affiliation: Materials Characterization and Preparation Center (MCPC), South University of Science and Technology of China , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Yao
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Xiyuan
authors.initials: X
authors.lastname: Feng
authors.affiliation: Materials Characterization and Preparation Center (MCPC), South University of Science and Technology of China , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Zhenwu
authors.initials: Z
authors.lastname: Liao
authors.affiliation: Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Qicong
authors.initials: Q
authors.lastname: Su
authors.affiliation: Shenzhen Key Laboratory of Integrated Microsystems, School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School , No. 2199, Lishui Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Xinnan
authors.initials: X
authors.lastname: Lin
authors.affiliation: Department of Materials Science and Engineering, Shenzhen Key Laboratory of Full Spectral Solar Electricity Generation (FSSEG), Southern University of Science and Technology , No. 1088, Xueyuan Road, 518055 Shenzhen, Guangdong, People's Republic of China.
authors.forename: Zhubing
authors.identifier: http://orcid.org/0000-0002-2775-0894
authors.initials: Z
authors.lastname: He