title: Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.
abstract: Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS2and MoTe2by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and -0.07 for monolayer MoS2and MoTe2, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk MoS2. Our results further imply that metal work functions have very little influence on contact properties of 2D-material-based devices. Moreover, we found that Rcis exponentially proportional to SBH, and these processing parameters can be controlled sensitively upon chemical doping into the 2D materials. These findings provide a practical guideline for depinning Fermi level at the 2D interfaces so that polarity control of TMDC-based semiconductors can be achieved efficiently.
authors.forename: Changsik
authors.initials: C
authors.lastname: Kim
authors.forename: Inyong
authors.initials: I
authors.lastname: Moon
authors.forename: Daeyeong
authors.identifier: 0000-0002-1723-4749
authors.initials: D
authors.lastname: Lee
authors.forename: Min Sup
authors.initials: MS
authors.lastname: Choi
authors.forename: Faisal
authors.initials: F
authors.lastname: Ahmed
authors.affiliation: Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
authors.forename: Seunggeol
authors.initials: S
authors.lastname: Nam
authors.affiliation: Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
authors.forename: Yeonchoo
authors.initials: Y
authors.lastname: Cho
authors.affiliation: Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
authors.forename: Hyeon-Jin
authors.initials: HJ
authors.lastname: Shin
authors.affiliation: Device & System Research Center, Samsung Advanced Institute of Technology (SAIT) , 130 Samsung-ro, Yeongtong-gu, Suwon, Gyeonggi-do 16676, Korea.
authors.forename: Seongjun
authors.initials: S
authors.lastname: Park
authors.forename: Won Jong
authors.identifier: 0000-0002-3767-7969
authors.initials: WJ
authors.lastname: Yoo
keywords: Fermi level pinning; Schottky barrier height; contact resistance; molybdenum disulfide; molybdenum ditelluride; transition metal dichalcogenides