title: Near Full-Composition-Range High-Quality GaAs1-xSbxNanowires Grown by Molecular-Beam Epitaxy.
abstract: Here we report on the Ga self-catalyzed growth of near full-composition-range energy-gap-tunable GaAs1-xSbxnanowires by molecular-beam epitaxy. GaAs1-xSbxnanowires with different Sb content are systematically grown by tuning the Sb and As fluxes, and the As background. We find that GaAs1-xSbxnanowires with low Sb content can be grown directly on Si(111) substrates (0 ≤ x ≤ 0.60) and GaAs nanowire stems (0 ≤ x ≤ 0.50) by tuning the Sb and As fluxes. To obtain GaAs1-xSbxnanowires with x ranging from 0.60 to 0.93, we grow the GaAs1-xSbxnanowires on GaAs nanowire stems by tuning the As background. Photoluminescence measurements confirm that the emission wavelength of the GaAs1-xSbxnanowires is tunable from 844 nm (GaAs) to 1760 nm (GaAs0.07Sb0.93). High-resolution transmission electron microscopy images show that the grown GaAs1-xSbxnanowires have pure zinc-blende crystal structure. Room-temperature Raman spectra reveal a redshift of the optical phonons in the GaAs1-xSbxnanowires with x increasing from 0 to 0.93. Field-effect transistors based on individual GaAs1-xSbxnanowires are fabricated, and rectifying behavior is observed in devices with low Sb content, which disappears in devices with high Sb content. The successful growth of high-quality GaAs1-xSbxnanowires with near full-range bandgap tuning may speed up the development of high-performance nanowire devices based on such ternaries.
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Lixia
authors.initials: L
authors.lastname: Li
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Pan
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Yongzhou
authors.initials: Y
authors.lastname: Xue
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Xiaolei
authors.initials: X
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Miaoling
authors.initials: M
authors.lastname: Lin
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Su
authors.affiliation: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China.
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Xuezhe
authors.initials: X
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Hyok
authors.initials: H
authors.lastname: So
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Dahai
authors.initials: D
authors.lastname: Wei
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Baoquan
authors.initials: B
authors.lastname: Sun
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Pingheng
authors.initials: P
authors.lastname: Tan
authors.affiliation: Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Microelectronic Science, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University , Changsha 410082, China.
authors.forename: Anlian
authors.identifier: 0000-0003-3335-3067
authors.initials: A
authors.lastname: Pan
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences , P.O. Box 912, Beijing 100083, China.
authors.forename: Jianhua
authors.identifier: 0000-0003-2269-3963
authors.initials: J
authors.lastname: Zhao
keywords: GaAs1−xSbx; bandgap tuning; molecular-beam epitaxy; nanowires; rectifying behavior; self-catalyzed