title: The W@WO3ohmic contact induces a high-efficiency photooxidation performance.
abstract: The Schottky-type metal-semiconductor (M-S) junction works well in promoting the separation of photogenerated carriers. In this paper, another type of M-S junction, Ohmic contact of W@WO3, has been developed via an acid partial oxidation strategy. By simply tuning the experimental parameters including the acid concentration and the reaction time, WO3nanosheets are epitaxially grown on a W core; moreover, the thickness and density of the WO3shell can be finely controlled. The photocatalytic activities of samples are tested via degradation of gaseous acetaldehyde under UV light irradiation. The results show that the W@WO3core-shell composite with a thinner and looser WO3shell exhibits a higher mineralization ability of acetaldehyde to carbon dioxide. An Ohmic contact between the W core and the WO3shell is fairly confirmed by means of photo-electronic measurements. It is believed that the built-in electric field at the interface of the Ohmic contact leads to the migration of photogenerated electrons from WO3to W, which is beneficial for separation of the electron-hole pairs and hence an enhanced photooxidation ability.
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Fangxu
authors.initials: F
authors.lastname: Wan
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Lina
authors.initials: L
authors.lastname: Kong
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Changhua
authors.initials: C
authors.lastname: Wang
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Yingying
authors.initials: Y
authors.lastname: Li
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Yichun
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Center for Advanced Optoelectronic Functional Materials Research, and Key Laboratory of UV-Emitting Materials and Technology of Ministry of Education, Northeast Normal University, 5268 Renmin Street, Changchun 130024, China. xtzhang@nenu.edu.cn.
authors.forename: Xintong
authors.identifier: http://orcid.org/0000-0003-0561-8902
authors.initials: X
authors.lastname: Zhang