title: Polarization-Mediated Modulation of Electronic and Transport Properties of Hybrid MoS2-BaTiO3-SrRuO3Tunnel Junctions.
abstract: Hybrid structures composed of ferroelectric thin films and functional two-dimensional (2D) materials may exhibit unique characteristics and reveal new phenomena due to the cross-interface coupling between their intrinsic properties. In this report, we demonstrate a symbiotic interplay between spontaneous polarization of the ultrathin BaTiO3ferroelectric film and conductivity of the adjacent molybdenum disulfide (MoS2) layer, a 2D narrow-bandgap semiconductor. Polarization-induced modulation of the electronic properties of MoS2results in a giant tunneling electroresistance effect in the hybrid MoS2-BaTiO3-SrRuO3ferroelectric tunnel junctions (FTJs) with an OFF-to-ON resistance ratio as high as 104, a 50-fold increase in comparison with the same type of FTJs with metal electrodes. The effect stems from the reversible accumulation-depletion of the majority carriers in the MoS2electrode in response to ferroelectric switching, which alters the barrier at the MoS2-BaTiO3interface. Continuous tunability of resistive states realized via stable sequential domain structures in BaTiO3adds memristive functionality to the hybrid FTJs. The use of narrow band 2D semiconductors in conjunction with ferroelectric films provides a novel pathway for development of the electronic devices with enhanced performance.
authors.forename: Tao
authors.identifier: 0000-0002-3337-6202
authors.initials: T
authors.lastname: Li
authors.forename: Pankaj
authors.initials: P
authors.lastname: Sharma
authors.forename: Alexey
authors.identifier: 0000-0001-5043-1616
authors.initials: A
authors.lastname: Lipatov
authors.affiliation: Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.
authors.forename: Hyungwoo
authors.initials: H
authors.lastname: Lee
authors.affiliation: Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.
authors.forename: Jung-Woo
authors.initials: JW
authors.lastname: Lee
authors.affiliation: Kurnakov Institute for General and Inorganic Chemistry, Russian Academy of Sciences , 119991 Moscow, Russia.|Saint Petersburg State University , 190000 St. Petersburg, Russia.
authors.forename: Mikhail Y
authors.initials: MY
authors.lastname: Zhuravlev
authors.forename: Tula R
authors.initials: TR
authors.lastname: Paudel
authors.affiliation: Institute of Materials Science, Technische Universität Darmstadt , D-64287 Darmstadt, Germany.
authors.forename: Yuri A
authors.initials: YA
authors.lastname: Genenko
authors.affiliation: Materials Science and Engineering, University of Wisconsin , Madison, Wisconsin 53706, United States.
authors.forename: Chang-Beom
authors.initials: CB
authors.lastname: Eom
authors.forename: Evgeny Y
authors.initials: EY
authors.lastname: Tsymbal
authors.forename: Alexander
authors.identifier: 0000-0002-8688-3451
authors.initials: A
authors.lastname: Sinitskii
authors.forename: Alexei
authors.identifier: 0000-0003-0492-2750
authors.initials: A
authors.lastname: Gruverman
keywords: 2D materials; MoS2; Resistive switching; ferroelectric tunnel junctions