title: Electrically pumped continuous-wave 1.3  μm quantum-dot lasers epitaxially grown on on-axis (001)  GaP/Si.
abstract: We demonstrate the first electrically pumped continuous-wave (CW) III-V semiconductor lasers epitaxially grown on on-axis (001) silicon substrates without offcut or germanium layers, using InAs/GaAs quantum dots as the active region and an intermediate GaP buffer between the silicon and device layers. Broad-area lasers with uncoated facets achieve room-temperature lasing with threshold current densities around 860  A/cm2and 110 mW of single-facet output power for the same device. Ridge lasers designed for low threshold operations show maximum lasing temperatures up to 90°C and thresholds down to 30 mA.
authors.forename: Alan Y
authors.initials: AY
authors.lastname: Liu
authors.forename: Jon
authors.initials: J
authors.lastname: Peters
authors.forename: Xue
authors.initials: X
authors.lastname: Huang
authors.forename: Daehwan
authors.initials: D
authors.lastname: Jung
authors.forename: Justin
authors.initials: J
authors.lastname: Norman
authors.forename: Minjoo L
authors.initials: ML
authors.lastname: Lee
authors.forename: Arthur C
authors.initials: AC
authors.lastname: Gossard
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers