title: Enhanced thermoelectric properties of Pb1-xBixS prepared with hydrothermal synthesis and microwave sintering.
abstract: As a cheap substitute for PbTe or PbSe, the thermoelectric performance of PbS still remains to be improved. In this report, we selected Bi2S3as a donor and employed a facile route of hydrothermal synthesis combined with microwave sintering to fabricate Bi2S3doped PbS. Due to the increased electrical conductivity by Bi2S3doping and the decreased thermal conductivity from the refined microstructure, the thermoelectric figure of merit ZT of microwave sintered Pb0.995Bi0.005S and Pb0.99Bi0.01S reached 0.90 and 0.86 at 800 K, respectively, without sign of saturation. When processed with plasma activated sintering (PAS), the highest ZT value of Pb0.99Bi0.01S only reached 0.3 at 800 K. The obtained results indicate that hydrothermal synthesis and microwave sintering can essentially improve the thermoelectric properties of Pb1-xBixS and easily realize mass production at low cost.
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com.
authors.forename: Xueli
authors.identifier: http://orcid.org/0000-0002-5657-3671
authors.initials: X
authors.lastname: Du
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com.
authors.forename: Rongna
authors.initials: R
authors.lastname: Shi
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com.
authors.forename: Ying
authors.initials: Y
authors.lastname: Guo
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com.
authors.forename: Yuelong
authors.initials: Y
authors.lastname: Wang
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com and Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin University of Technology, Tianjin 300384, China.
authors.forename: Yongchang
authors.initials: Y
authors.lastname: Ma
authors.affiliation: School of Materials Science & Engineering, Tianjin University of Technology, Tianjin 300384, China. d7288@126.com and Tianjin Key Lab for Photoelectric Materials & Devices, Tianjin University of Technology, Tianjin 300384, China.
authors.forename: Zhihao
authors.initials: Z
authors.lastname: Yuan