title: Effect of the solvent used for fabrication of perovskite films by solvent dropping on performance of perovskite light-emitting diodes.
abstract: Organic-inorganic hybrid perovskites have emerged as a next-generation candidate for light-emitting device applications due to their excellent optical and electrical properties with narrow band emission compared to organic emitters. The morphological control of perovskite films with full surface coverage and few defect sites is essential for achieving highly efficient perovskite light-emitting diodes (PeLEDs). Here, we obtain a highly uniform perovskite film with a remarkably reduced number of defect sites in a perovskite crystal using chlorobenzene dropping. This effort leads to the enhanced performance of PeLEDs with a CH3NH3PbBr3film using chlorobenzene dropping with a maximum luminance of 14 460 cd m-2(at 3.8 V) and a maximum external quantum efficiency (EQE) of 0.71% (at 2.8 V). This research confirms that the role of the solvent in the solvent dropping method is to fabricate a dense and uniform perovskite film and to passivate the defect sites of the perovskite crystal films.
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Jae Choul
authors.initials: JC
authors.lastname: Yu
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Dae Woo
authors.initials: DW
authors.lastname: Kim
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Da Bin
authors.initials: DB
authors.lastname: Kim
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Eui Dae
authors.initials: ED
authors.lastname: Jung
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Ki-Suk
authors.initials: KS
authors.lastname: Lee
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Sukbin
authors.initials: S
authors.lastname: Lee
authors.affiliation: Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge, CB3 0HE, UK.
authors.forename: Daniele Di
authors.identifier: http://orcid.org/0000-0002-4462-9068
authors.initials: DD
authors.lastname: Nuzzo
authors.affiliation: Department of Physics and Centre for Plastic Electronics, Imperial College London Prince Consort Road, London, SW7 2AZ, UK.
authors.forename: Ji-Seon
authors.initials: JS
authors.lastname: Kim
authors.affiliation: School of Materials Science Engineering/KIST-UNIST Ulsan Center for Convergent Materials/Perovtronics Research Center, Ulsan National Institute of Science and Technology (UNIST), UNIST-gil 50, Ulsan, 689-798, Republic of Korea. mhsong@unist.ac.kr.
authors.forename: Myoung Hoon
authors.identifier: http://orcid.org/0000-0002-8106-7332
authors.initials: MH
authors.lastname: Song