title: An attempt to apply the inelastic thermal spike model to surface modifications of CaF2induced by highly charged ions: comparison to swift heavy ions effects and extension to some others material.
abstract: Surface damage appears on materials irradiated by highly charged ions (HCI). Since a direct link has been found between surface damage created by HCI with the one created by swift heavy ions (SHI), the inelastic thermal spike model (i-TS model) developed to explain track creation resulting from the electron excitation induced by SHI can also be applied to describe the response of materials under HCI which transfers its potential energy to electrons of the target. An experimental description of the appearance of the hillock-like nanoscale protrusions induced by SHI at the surface of CaF2is presented in comparison with track formation in bulk which shows that the only parameter on which we can be confident is the electronic energy loss threshold. Track size and electronic energy loss threshold resulting from SHI irradiation of CaF2is described by the i-TS model in a 2D geometry. Based on this description the i-TS model is extended to three dimensions to describe the potential threshold of appearance of protrusions by HCI in CaF2and to other crystalline materials (LiF, crystalline SiO2, mica, LiNbO3, SrTiO3, ZnO, TiO2, HOPG). The strength of the electron-phonon coupling and the depth in which the potential energy is deposited near the surface combined with the energy necessary to melt the material defines the classification of the material sensitivity. As done for SHI, the band gap of the material may play an important role in the determination of the depth in which the potential energy is deposited. Moreover larger is the initial potential energy and larger is the depth in which it is deposited.
authors.affiliation: CIMAP (CEA-CNRS-ENSICAEN-Université de Caen Basse Normandie), BP5133, 14070 Caen Cedex 5, France.
authors.forename: C
authors.initials: C
authors.lastname: Dufour
authors.forename: V
authors.initials: V
authors.lastname: Khomrenkov
authors.forename: Y Y
authors.initials: YY
authors.lastname: Wang
authors.forename: Z G
authors.initials: ZG
authors.lastname: Wang
authors.forename: F
authors.initials: F
authors.lastname: Aumayr
authors.forename: M
authors.initials: M
authors.lastname: Toulemonde