title: Electrical Performance of a Molecular Organic Semiconductor under Thermal Stress.
abstract: The high temperature performance oforganic field-effect transistorsbased on a molecular organic semiconductor with intermediate dimensions, namely X2, is evaluated. Hole mobility is stable, even at 200-250 °C. Changes in device characteristics at high temperature are reversible across multiple cycles of high temperature operation. Measurements at high temperature exhibit larger hysteresis, while at low temperature one observes the emergence of ambipolar transport.
authors.affiliation: Department of Chemistry and Biochemistry, Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Martin
authors.initials: M
authors.lastname: Seifrid
authors.affiliation: Materials Department, Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Michael J
authors.initials: MJ
authors.lastname: Ford
authors.affiliation: The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01751, USA.
authors.forename: Mingqi
authors.initials: M
authors.lastname: Li
authors.affiliation: The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01751, USA.
authors.forename: Kyoung Moo
authors.initials: KM
authors.lastname: Koh
authors.affiliation: The Dow Chemical Company, 455 Forest St, Marlborough, MA, 01751, USA.
authors.forename: Peter
authors.initials: P
authors.lastname: Trefonas
authors.affiliation: Department of Chemistry and Biochemistry, Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.|Materials Department, Center for Polymers and Organic Solids, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: Guillermo C
authors.initials: GC
authors.lastname: Bazan
keywords: ambipolar transport; device stability; high temperature electronics; organic field-effect transistors; organic semiconductors