title: Understanding charge transport in lead iodide perovskite thin-film field-effect transistors.
abstract: Fundamental understanding of the charge transport physics of hybrid lead halide perovskite semiconductors is important for advancing their use in high-performance optoelectronics. We use field-effect transistors (FETs) to probe the charge transport mechanism in thin films of methylammonium lead iodide (MAPbI3). We show that through optimization of thin-film microstructure and source-drain contact modifications, it is possible to significantly minimize instability and hysteresis in FET characteristics and demonstrate an electron field-effect mobility (μFET) of 0.5 cm2/Vs at room temperature. Temperature-dependent transport studies revealed a negative coefficient of mobility with three different temperature regimes. On the basis of electrical and spectroscopic studies, we attribute the three different regimes to transport limited by ion migration due to point defects associated with grain boundaries, polarization disorder of the MA+cations, and thermal vibrations of the lead halide inorganic cages.
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Satyaprasad P
authors.initials: SP
authors.lastname: Senanayak
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Bingyan
authors.initials: B
authors.lastname: Yang
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Tudor H
authors.initials: TH
authors.lastname: Thomas
authors.affiliation: Department of Chemistry and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Butenandtstraße 11, 81377 München, Germany.
authors.forename: Nadja
authors.identifier: 0000-0002-1183-4129
authors.initials: N
authors.lastname: Giesbrecht
authors.affiliation: Department of Materials Science and Engineering, Monash University, Clayton Campus, Wellington Road, Clayton, Victoria 3800, Australia.
authors.forename: Wenchao
authors.initials: W
authors.lastname: Huang
authors.affiliation: Department of Materials Science and Engineering, Monash University, Clayton Campus, Wellington Road, Clayton, Victoria 3800, Australia.
authors.forename: Eliot
authors.initials: E
authors.lastname: Gann
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Bhaskaran
authors.initials: B
authors.lastname: Nair
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Karl
authors.identifier: 0000-0001-7426-1308
authors.initials: K
authors.lastname: Goedel
authors.affiliation: Department of Physics and Astronomy, University of Missouri, 223 Physics Building, Columbia, MO 65211-7010, USA.
authors.forename: Suchi
authors.initials: S
authors.lastname: Guha
authors.affiliation: Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, UK.
authors.forename: Xavier
authors.initials: X
authors.lastname: Moya
authors.affiliation: Department of Materials Science and Engineering, Monash University, Clayton Campus, Wellington Road, Clayton, Victoria 3800, Australia.
authors.forename: Christopher R
authors.identifier: 0000-0001-5221-878X
authors.initials: CR
authors.lastname: McNeill
authors.affiliation: Department of Chemistry and Center for NanoScience (CeNS), Ludwig-Maximilians-Universität München, Butenandtstraße 11, 81377 München, Germany.; School of Electrical and Electronic Engineering, Newcastle University, Merz Court, Newcastle upon Tyne NE1 7RU, UK.
authors.forename: Pablo
authors.initials: P
authors.lastname: Docampo
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Aditya
authors.initials: A
authors.lastname: Sadhanala
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Richard H
authors.initials: RH
authors.lastname: Friend
authors.affiliation: Optoelectronics Group, Cavendish Laboratory, University of Cambridge, J.J. Thomson Avenue, Cambridge CB3 0HE, UK.
authors.forename: Henning
authors.initials: H
authors.lastname: Sirringhaus
keywords: Band-transport; Ion migration; Lead Halide perovskites; thin film transistor