title: Highly Wavelength-Selective Enhancement of Responsivity in Ag Nanoparticle-Modified ZnO UV Photodetector.
abstract: We proposed and demonstrated Ag nanoparticles (NPs)-decorated ZnO photodetectors for UV light sensing. After decoration of their surface with random Ag NPs, the dark current density of ZnO UV photodetectors decreases obviously. Moreover, the device exhibits an obvious increase in peak responsivity at around 380 nm, which can be attributed to the narrow-band quadrupole plasmon resonance of Ag NPs in the UV range. Meanwhile, the responsivity at the other wavelengths decreases a lot. As a result, the response peak becomes more significant, and the response of the devices presents an excellent wavelength selectivity after covering with Ag NPs. The detailed mechanism for this phenomenon was explained. We believe that our findings would open a way to harness the high-order plasmon modes in the field of UV optoelectronic devices.
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.|Graduate University of the Chinese Academy of Sciences , Beijing 100049, People's Republic of China.
authors.forename: Xiao
authors.identifier: http://orcid.org/0000-0002-5377-0813
authors.initials: X
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Kewei
authors.initials: K
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Xing
authors.initials: X
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Binghui
authors.initials: B
authors.lastname: Li
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Mingming
authors.initials: M
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Zhenzhong
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Haifeng
authors.initials: H
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences , Changchun 130033, People's Republic of China.
authors.forename: Dezhen
authors.initials: D
authors.lastname: Shen
keywords: quadrupole; semiconductor; solar-blind; surface plasmon resonance; wide band gap