title: Exciton Emission Intensity Modulation of Monolayer MoS2via Au Plasmon Coupling.
abstract: Modulation of photoluminescence of atomically thin transition metal dichalcogenide two-dimensional materials is critical for their integration in optoelectronic and photonic device applications. By coupling with different plasmonic array geometries, we have shown that the photoluminescence intensity can be enhanced and quenched in comparison with pristine monolayer MoS2. The enhanced exciton emission intensity can be further tuned by varying the angle of polarized incident excitation. Through controlled variation of the structural parameters of the plasmonic array in our experiment, we demonstrate modulation of the photoluminescence intensity from nearly fourfold quenching to approximately threefold enhancement. Our data indicates that the plasmonic resonance couples to optical fields at both, excitation and emission bands, and increases the spontaneous emission rate in a double spacing plasmonic array structure as compared with an equal spacing array structure. Furthermore our experimental results are supported by numerical as well as full electromagnetic wave simulations. This study can facilitate the incorporation of plasmon-enhanced transition metal dichalcogenide structures in photodetector, sensor and light emitter applications.
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: B
authors.initials: B
authors.lastname: Mukherjee
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: N
authors.initials: N
authors.lastname: Kaushik
authors.affiliation: Photonics and Optical Nanoscopy Laboratory, Physics Division and Center for Energy Science, h-cross, Indian Institute of Science Education and Research, Pune 411008, India.
authors.forename: Ravi P N
authors.initials: RP
authors.lastname: Tripathi
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: A M
authors.initials: AM
authors.lastname: Joseph
authors.affiliation: Department of Physics, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: P K
authors.initials: PK
authors.lastname: Mohapatra
authors.affiliation: Department of Physics, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: S
authors.initials: S
authors.lastname: Dhar
authors.affiliation: Department of Physics, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: B P
authors.initials: BP
authors.lastname: Singh
authors.affiliation: Photonics and Optical Nanoscopy Laboratory, Physics Division and Center for Energy Science, h-cross, Indian Institute of Science Education and Research, Pune 411008, India.
authors.forename: G V Pavan
authors.initials: GV
authors.lastname: Kumar
authors.affiliation: Department of Electrical and Computer Engineering, School of Engineering and Applied Science, The George Washington University, Washington, D.C. 20052, USA.
authors.forename: E
authors.initials: E
authors.lastname: Simsek
authors.affiliation: Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai, Maharashtra 400076, India.
authors.forename: S
authors.initials: S
authors.lastname: Lodha