title: The Influence of Hafnium Doping on Density of States in Zinc Oxide Thin-Film Transistors Deposited via Atomic Layer Deposition.
abstract: Thin-film transistors (TFTs) with atomic layer deposition (ALD) HfZnO (HZO) as channel layer and Al2O3as gate insulator were successfully fabricated. Compared with ZnO-TFT, the stability of HZO-TFT was obviously improved as Hf doping can suppress the generation of oxygen related defects. The transfer characteristics of TFTs at different temperatures were also investigated, and temperature stability enhancement was observed for the TFT with Hf doping. The density of states (DOS) was calculated based on the experimentally obtained Ea, which can explain the experimental observation. A high-field effect mobility of 9.4 cm2/Vs, a suitable turn-on voltage of 0.26 V, a high on/off ratio of over 107and a steep sub-threshold swing of 0.3 V/decade were obtained in HZO-TFT. The results showed that temperature stability enhancement in HfZnO thin-film transistors are attributed to the smaller DOS.
authors.affiliation: Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.|School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China.
authors.forename: Xingwei
authors.initials: X
authors.lastname: Ding
authors.affiliation: School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China.
authors.forename: Cunping
authors.initials: C
authors.lastname: Qin
authors.affiliation: Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.
authors.forename: Jiantao
authors.initials: J
authors.lastname: Song
authors.affiliation: Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China. dxw1026@126.com.|School of Mechatronics and Automation, Shanghai University, Shanghai, 200072, China. dxw1026@126.com.
authors.forename: Jianhua
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Department of Materials Science, Shanghai University, Shanghai, 200072, China.
authors.forename: Xueyin
authors.initials: X
authors.lastname: Jiang
authors.affiliation: Key Laboratory of Advanced Display and System Application, Ministry of Education, Shanghai University, 149 Yanchang Road, Jingan District, Shanghai, 200070, People's Republic of China.|Department of Materials Science, Shanghai University, Shanghai, 200072, China.
authors.forename: Zhilin
authors.initials: Z
authors.lastname: Zhang