title: Flexible All-Inorganic Perovskite CsPbBr3Nonvolatile Memory Device.
abstract: All-inorganic perovskite CsPbX3(X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX3electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr3films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current-voltage curves under different bending angles and consecutive flexing cycles. Moreover, a model of the formation and rupture of filaments through the CsPbBr3layer was proposed to explain the resistive switching effect. It is believed that this study will offer a new setting to understand and design all-inorganic perovskite materials for future stable flexible electronic devices.
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Dongjue
authors.initials: D
authors.lastname: Liu
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Qiqi
authors.initials: Q
authors.lastname: Lin
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Zhigang
authors.initials: Z
authors.lastname: Zang
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Wang
authors.affiliation: Sichuan Province Key Laboratory of Information Materials and Devices Application, College of Optoelectronic Technology, Chengdu University of Information Technology , Chengdu 610225, China.
authors.forename: Peihua
authors.initials: P
authors.lastname: Wangyang
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Xiaosheng
authors.initials: X
authors.lastname: Tang
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Miao
authors.initials: M
authors.lastname: Zhou
authors.affiliation: Key Laboratory of Optoelectronic Technology and Systems of the Education Ministry of China, College of Optoelectronic Engineering, Chongqing University , Chongqing 400044, China.
authors.forename: Wei
authors.identifier: http://orcid.org/0000-0002-9914-7162
authors.initials: W
authors.lastname: Hu
keywords: CsPbBr3; flexible electronics; memory device; perovskite; resistive switching