title: Formation of Self-Connected Si0.8Ge0.2Lateral Nanowires and Pyramids on Rib-Patterned Si(1 1 10) Substrate.
abstract: In this work, Si0.8Ge0.2is deposited onto the rib-patterned Si (1 1 10) template oriented in the [1 -1 0] direction. Atomic force microscopy (AFM) reveals that the rib sidewalls reshape into pyramid-covered (0 0 1) and smooth {1 1 3} facets, respectively, while the {1 0 5} facets-bounded lateral SiGe nanowires dominate the rib top along the [5 5 -1] direction. At both the rib shoulder sites and the pyramid vacancy sites, self-connecting occurs between the meeting nanowire and pyramids to form elongated huts, which are driven by the minimization of the total energy density according to the finite-element simulations results. These results suggest a convenient solution to form lateral SiGe nanowires covering multi-faceted surfaces on the patterned template.
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Du
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China. gchen@mail.sitp.ac.cn.
authors.forename: Gang
authors.identifier: http://orcid.org/0000-0002-9092-7496
authors.initials: G
authors.lastname: Chen
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yutian Road, Shanghai, 200083, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Lu
keywords: Finite-element simulation; Germanium; Lateral nanowires; Molecular beam epitaxy; Patterned template