title: Thin TiOxlayer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.
abstract: Ta2O5has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta2O5RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiOx(x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta2O5RS layer. The series resistor TiOxefficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiOxlayer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.
authors.affiliation: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin, 300384, China. cheolsh@snu.ac.kr jinshi58@163.com.
authors.forename: Xiang Yuan
authors.initials: XY
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul, 151-744, Republic of Korea.
authors.forename: Xing Long
authors.initials: XL
authors.lastname: Shao
authors.affiliation: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin, 300384, China. cheolsh@snu.ac.kr jinshi58@163.com.
authors.forename: Yi Chuan
authors.initials: YC
authors.lastname: Wang
authors.affiliation: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin, 300384, China. cheolsh@snu.ac.kr jinshi58@163.com.
authors.forename: Hao
authors.initials: H
authors.lastname: Jiang
authors.affiliation: Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Gwanak-ro 1, Daehag-dong, Gwanak-gu, Seoul, 151-744, Republic of Korea.
authors.forename: Cheol Seong
authors.identifier: http://orcid.org/0000-0002-6254-9758
authors.initials: CS
authors.lastname: Hwang
authors.affiliation: School of Electronics Information Engineering, Tianjin Key Laboratory of Film Electronic & Communication Devices, Tianjin University of Technology, No. 391, Binshuixi Road, Xiqing District, Tianjin, 300384, China. cheolsh@snu.ac.kr jinshi58@163.com.
authors.forename: Jin Shi
authors.initials: JS
authors.lastname: Zhao