title: Surface-gate-defined single-electron transistor in a MoS2bilayer.
abstract: We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
authors.affiliation: Chemical and Quantum Physics, School of Science, RMIT University, Melbourne VIC 3001, Australia. The Australian Research Council Centre of Excellence for Nanoscale BioPhotonics, School of Science, RMIT University, Melbourne, VIC 3001, Australia.
authors.forename: M
authors.initials: M
authors.lastname: Javaid
authors.forename: Daniel W
authors.initials: DW
authors.lastname: Drumm
authors.forename: Salvy P
authors.initials: SP
authors.lastname: Russo
authors.forename: Andrew D
authors.initials: AD
authors.lastname: Greentree