title: Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure.
abstract: We investigate the effects of water absorption on the electrical performance and stability in high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs). The ZnON TFT exhibits a smaller field-effect mobility, lower turn-on voltage, and higher subthreshold slope with a deteriorated electrical stability under positive gate bias stresses after being exposed to water. From the Hall measurements, an increase of the electron concentration and a decrease of the Hall mobility are observed in the ZnON thin film after water absorption. The observed phenomena are mainly attributed to the water molecule-induced increase of the defective ZnXNYbond and the oxygen vacancy inside the ZnON thin film based on the x-ray photoelectron spectroscopy analysis.
authors.affiliation: School of Electrical and Electronics Engineering, Chung-Ang University, Seoul, Republic of Korea.
authors.forename: Dae-Hwan
authors.initials: DH
authors.lastname: Kim
authors.forename: Hwan-Seok
authors.initials: HS
authors.lastname: Jeong
authors.forename: Hyuck-In
authors.initials: HI
authors.lastname: Kwon