title: Broad-Band Photocurrent Enhancement in MoS2Layers Directly Grown on Light-Trapping Si Nanocone Arrays.
abstract: There has been growing research interest in realizing optoelectronic devices based on the two-dimensional atomically thin semiconductor MoS2owing to its distinct physical properties that set it apart from conventional semiconductors. However, there is little optical absorption in these extremely thin MoS2layers, which presents an obstacle toward applying them for use in high-efficiency light-absorbing devices. We synthesized trilayers of MoS2directly on SiO2/Si nanocone (NC) arrays using chemical vapor deposition and investigated their photodetection characteristics. The photoresponsivity of the MoS2/NC structure was much higher than that of the flat counterpart across the whole visible wavelength range (for example, it was almost an order of magnitude higher at λ = 532 nm). Strongly concentrated light near the surface that originated from a Fabry-Perot interference in the SiO2thin layers and a Mie-like resonance caused by the Si NCs boosted the optical absorption in MoS2. Our work demonstrates that MoS2/NC structures could provide a useful means to realize high-performance optoelectronic devices.
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Yunae
authors.initials: Y
authors.lastname: Cho
authors.affiliation: Department of Advanced Functional Thin Films Department, Korea Institute of Materials Science (KIMS) , Changwon 51508, Korea.
authors.forename: Byungjin
authors.identifier: http://orcid.org/0000-0002-3885-8139
authors.initials: B
authors.lastname: Cho
authors.affiliation: Department of Advanced Functional Thin Films Department, Korea Institute of Materials Science (KIMS) , Changwon 51508, Korea.
authors.forename: Yonghun
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Department of Nanomanufacturing Research, Korea Institute of Machinery & Materials (KIMM) , Daejeon 34103, Korea.
authors.forename: Jihye
authors.initials: J
authors.lastname: Lee
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Eunah
authors.initials: E
authors.lastname: Kim
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Trang Thi Thu
authors.initials: TT
authors.lastname: Nguyen
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Ju Hyun
authors.initials: JH
authors.lastname: Lee
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Seokhyun
authors.initials: S
authors.lastname: Yoon
authors.affiliation: Department of Advanced Functional Thin Films Department, Korea Institute of Materials Science (KIMS) , Changwon 51508, Korea.
authors.forename: Dong-Ho
authors.initials: DH
authors.lastname: Kim
authors.affiliation: Department of Nanomanufacturing Research, Korea Institute of Machinery & Materials (KIMM) , Daejeon 34103, Korea.
authors.forename: Jun-Hyuk
authors.initials: JH
authors.lastname: Choi
authors.affiliation: Department of Physics, Ewha Womans University , Seoul 03760, Korea.
authors.forename: Dong-Wook
authors.identifier: http://orcid.org/0000-0002-5687-7739
authors.initials: DW
authors.lastname: Kim
keywords: MoS2; Si; chemical vapor deposition; nanocone; photoresponse