title: Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtxNanocrystals for Resistive Random Access Memory Applications.
abstract: Al2O3- or HfO2-based nanocomposite structures with embedded CoPtxnanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPtxNCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPtxNCs, ALD-derived Pt/oxide/100 cycle-CoPtxNCs/TiN/SiO2/Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥102) of OFF/ON states, better switching endurance up to 104cycles, and longer data retention over 105s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPtxNCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPtxNCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPtxNCs can effectively improve the formation of conducting filaments due to the CoPtxNC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.|Anhui Key Laboratory of Functional Coordination Compounds, School of Chemistry and Chemical Engineering, Anqing Normal University , Anhui 246011, P. R. China.
authors.forename: Lai-Guo
authors.identifier: http://orcid.org/0000-0002-5063-9713
authors.initials: LG
authors.lastname: Wang
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Zheng-Yi
authors.initials: ZY
authors.lastname: Cao
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Xu
authors.initials: X
authors.lastname: Qian
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: Zhu
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Da-Peng
authors.initials: DP
authors.lastname: Cui
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Ai-Dong
authors.initials: AD
authors.lastname: Li
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, College of Engineering and Applied Sciences, Collaborative Innovation Center of Advanced Microstructures, Nanjing University , Nanjing 210093, P. R. China.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
keywords: CoPtx; atomic layer deposition; ferromagnetic property; metal oxide; nanocrystal; nonvolatile memory; resistance random access memory