title: Multiband Hot Photoluminescence from Nanocavity-Embedded Silicon Nanowire Arrays with Tunable Wavelength.
abstract: Besides the well-known quantum confinement effect, hot luminescence from indirect bandgap Si provides a new and promising approach to realize monolithically integrated silicon optoelectronics due to phonon-assisted light emission. In this work, multiband hot photoluminescence is generated from Si nanowire arrays by introducing trapezoid-shaped nanocavities that support hybrid photonic-plasmonic modes. By continuously adjusting the geometric parameters of the Si nanowires with trapezoidal nanocavities, the multiband hot photoluminescence can be tuned in the range from visible to near-infrared independent of the excitation laser wavelength. The highly tunable wavelength bands and concomitant compatibility with Si-integrated electronics enable tailoring of silicon-based light sources suitable for next-generation optoelectronics devices.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Mu
authors.forename: Haochi
authors.initials: H
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Miao
authors.initials: M
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Aimin
authors.initials: A
authors.lastname: Wu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Gongmin
authors.initials: G
authors.lastname: Qi
authors.affiliation: Department of Physics and Materials Science, City University of Hong Kong , Tat Chee Avenue, Kowloon, Hong Kong, People's Republic of China.
authors.forename: Paul K
authors.initials: PK
authors.lastname: Chu
authors.forename: Zhenghua
authors.initials: Z
authors.lastname: An
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Zengfeng
authors.identifier: 0000-0002-9357-5107
authors.initials: Z
authors.lastname: Di
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, People's Republic of China.
authors.forename: Xi
authors.initials: X
authors.lastname: Wang
keywords: Hot luminescence; Si nanowires; nanocavities; resonance mode; surface plasmon; tunable wavelength