title: Anisotropic Spectroscopy and Electrical Properties of 2D ReS2(1-x)Se2xAlloys with Distorted 1T Structure.
abstract: 2D black phosphorus (BP) and rhenium dichalcogenides (ReX2, X = S, Se) possess intrinsic in-plane anisotropic physical properties arising from their low crystal lattice symmetry, which has inspired their novel applications in electronics, photonics, and optoelectronics. Different from BP with poor environmental stability, ReX2has low-symmetry distorted 1T structures with excellent stability. In ReX2, the electronic structure is weakly dependent on layer numbers, which restricts their property tunability and device applications. Here, the properties are tuned, such as optical bandgap, Raman anisotropy, and electrical transport, by alloying 2D ReS2and ReSe2. Photoluminescence emission energy of ReS2(1-x)Se2xmonolayers (x from 0 to 1 with a step of 0.1) can be continuously tuned ranging from 1.62 to 1.31 eV. Polarization behavior of Raman modes, such as ReS2-like peak at 212 cm-1, shifts as the composition changes. Anisotropic electrical property is maintained in ReS2(1-x)Se2xwith high electron mobility along b-axis for all compositions of ReS2(1-x)Se2x.
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.|University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Wen
authors.initials: W
authors.lastname: Wen
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.|Department of Applied Physics, Chongqing University, Chongqing, 401331, P. R. China.
authors.forename: Yiming
authors.initials: Y
authors.lastname: Zhu
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Xuelu
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Electronic Engineering, Ming Chi University of Technology, Taipei, 243, Taiwan, Republic of China.
authors.forename: Hung-Pin
authors.initials: HP
authors.lastname: Hsu
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Fei
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Yanfeng
authors.initials: Y
authors.lastname: Chen
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.
authors.forename: Xinsheng
authors.initials: X
authors.lastname: Wang
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.|University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Mei
authors.initials: M
authors.lastname: Zhang
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, Republic of China.
authors.forename: Kuan-Hung
authors.initials: KH
authors.lastname: Lin
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, Republic of China.
authors.forename: Fei-Sheng
authors.initials: FS
authors.lastname: Huang
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, Republic of China.
authors.forename: Yi-Ping
authors.initials: YP
authors.lastname: Wang
authors.affiliation: Department of Electronic Engineering, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, Republic of China.
authors.forename: Ying-Sheng
authors.initials: YS
authors.lastname: Huang
authors.affiliation: Graduate Institute of Applied Science and Technology, National Taiwan University of Science and Technology, Taipei, 106, Taiwan, Republic of China.
authors.forename: Ching-Hwa
authors.initials: CH
authors.lastname: Ho
authors.affiliation: State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China.
authors.forename: Ping-Heng
authors.initials: PH
authors.lastname: Tan
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Chuanhong
authors.initials: C
authors.lastname: Jin
authors.affiliation: CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, 100190, P. R. China.|University of Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Liming
authors.initials: L
authors.lastname: Xie
keywords: anisotropic 2D materials; anisotropic electrical transport; polarized Raman spectroscopy; rhenium dichalcogenide alloys; tunable bandgaps