title: Growth of Large-Scale, Large-Size, Few-Layered α-MoO3on SiO2and Its Photoresponse Mechanism.
abstract: Layered α-MoO3is a multifunctional material that has significant application in optoelectronic devices. In this study, we show the growth of large-scale, large-size, few-layered (FL) α-MoO3nanosheet directly on technical substrates (SiO2and Si) by physical vapor deposition. We suggest that the growth is self-limiting in the [010] direction because of the re-evaporation and high diffusion capacity of MoOxspecies at high temperature. As-prepared FL α-MoO3is nonconductive and shows poor response to photoillumination with wavelength of 405 and 630 nm. Its work function is strongly altered by the substrate. Improvement of conductivity and photoresponse is observed after the FL device is annealed in vacuum. Line defects along the [001], [100], and [101] directions belonging to the generation of Osand Oavacancy states appear, and the interfacial effect is suppressed. Scanning near-field optical microscope shows that the defects are absorption sites. Kelvin probe force microscope reveals decrease of apparent work function under illumination, which confirms that electrons are excited from defects states. Our findings show that intense studies on defect engineering are required to push forward the application of two-dimensional metal oxides.
authors.forename: Yu
authors.initials: Y
authors.lastname: Wang
authors.forename: Xiang
authors.initials: X
authors.lastname: Du
authors.forename: Jiming
authors.initials: J
authors.lastname: Wang
authors.forename: Mingze
authors.initials: M
authors.lastname: Su
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong , Hong Kong SAR, P.R. China.|Engineering Research Center of IoT Technology Applications (Ministry of Education), Department of Electronic Engineering, Jiangnan University , Wuxi, Jiangsu 214122, P.R. China.
authors.forename: Xi
authors.initials: X
authors.lastname: Wan
authors.forename: Hui
authors.initials: H
authors.lastname: Meng
authors.affiliation: State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-sen University , Guangzhou, Guangdong 510275, P.R. China.
authors.forename: Weiguang
authors.identifier: http://orcid.org/0000-0002-3706-6359
authors.initials: W
authors.lastname: Xie
authors.affiliation: Department of Electronic Engineering and Materials Science and Technology Research Center, The Chinese University of Hong Kong , Hong Kong SAR, P.R. China.
authors.forename: Jianbin
authors.initials: J
authors.lastname: Xu
authors.forename: Pengyi
authors.initials: P
authors.lastname: Liu
keywords: MoO3; photoresponse; physical vapor deposition; surface defects; two-dimensional materials