title: Versatile Transfer of an Ultralong and Seamless Nanowire Array Crystallized at High Temperature for Use in High-Performance Flexible Devices.
abstract: Nanowire (NW) transfer technology has provided promising strategies to realize future flexible materials and electronics. Using this technology, geometrically controlled, high-quality NW arrays can now be obtained easily on various flexible substrates with high throughput. However, it is still challenging to extend this technology to a wide range of high-performance device applications because its limited temperature tolerance precludes the use of high-temperature annealing, which is essential for NW crystallization and functionalization. A pulsed laser technique has been developed to anneal NWs in the presence of a flexible substrate; however, the induced temperature is not high enough to improve the properties of materials such as ceramics and semiconductors. Here, we present a versatile nanotransfer method that is applicable to NWs that require high-temperature annealing. To successfully anneal NWs during their transfer, the developed fabrication method involves sequential removal of a nanoscale sacrificial layer. Using this method, we first produce an ultralong, perfectly aligned polycrystalline barium titanate (BaTiO3) NW array that is heat treated at 700 °C on a flexible polyethylene terephthalate (PET) substrate. This high-quality piezoelectric NW array on a flexible substrate is used as a flexible nanogenerator that generates current and voltage 37 and 10 times higher, respectively, than those of a nanogenerator made of noncrystallized BaTiO3NWs.
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Min-Ho
authors.initials: MH
authors.lastname: Seo
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Jae-Young
authors.initials: JY
authors.lastname: Yoo
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: So-Young
authors.initials: SY
authors.lastname: Choi
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Jae-Shin
authors.initials: JS
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Kwang-Wook
authors.initials: KW
authors.lastname: Choi
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Chang Kyu
authors.initials: CK
authors.lastname: Jeong
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Keon Jae
authors.initials: KJ
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering, ‡KAIST Institute for NanoCentury, and §Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST) , 291 Daehak-ro, Yuseong-gu, Daejeon 34141, Republic of Korea.
authors.forename: Jun-Bo
authors.identifier: 0000-0002-9447-3807
authors.initials: JB
authors.lastname: Yoon
keywords: crystallization; flexible piezoelectric; high alignment; nanowire array; transfer