title: Holographic image generation with a thin-film resonance caused by chalcogenide phase-change material.
abstract: The development of digital holography is anticipated for the viewing of 3D images by reconstructing both the amplitude and phase information of the object. Compared to analog holograms written by a laser interference, digital hologram technology has the potential to realize a moving 3D image using a spatial light modulator. However, to ensure a high-resolution 3D image with a large viewing angle, the hologram panel requires a near-wavelength scale pixel pitch with a sufficient large numbers of pixels. In this manuscript, we demonstrate a digital hologram panel based on a chalcogenide phase-change material (PCM) which has a pixel pitch of 1 μm and a panel size of 1.6 × 1.6 cm2. A thin film of PCM encapsulated by dielectric layers can be used for the hologram panel by means of excimer laser lithography. By tuning the thicknesses of upper and lower dielectric layers, a color-selective diffraction panel is demonstrated since a thin film resonance caused by dielectric can affect to the absorption and diffraction spectrum of the proposed hologram panel. We also show reflection color of a small active region (1 μm × 4 μm) made by ultra-thin PCM layer can be electrically changed.
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Integrated plasmonics and optical device laboratory, School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea.
authors.forename: Seung-Yeol
authors.initials: SY
authors.lastname: Lee
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Yong-Hae
authors.initials: YH
authors.lastname: Kim
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Seong-M
authors.initials: SM
authors.lastname: Cho
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Gi Heon
authors.initials: GH
authors.lastname: Kim
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Tae-Youb
authors.initials: TY
authors.lastname: Kim
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Hojun
authors.initials: H
authors.lastname: Ryu
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Han Na
authors.initials: HN
authors.lastname: Kim
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Han Byeol
authors.initials: HB
authors.lastname: Kang
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Chi-Young
authors.initials: CY
authors.lastname: Hwang
authors.affiliation: Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.|Smart I/O Platform Research Department, Electronics and telecommunications research institute, 218 Gajeong-ro, Yuseong-gu, Daejeon 305-700, Korea.
authors.forename: Chi-Sun
authors.initials: CS
authors.lastname: Hwang