title: Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction.
abstract: This paper presents a magnetically sensitive transistor using a nc-Si:H/c-Si heterojunction as an emitter junction. By adopting micro electro-mechanical systems (MEMS) technology and chemical vapor deposition (CVD) method, the nc-Si:H/c-Si heterojunction silicon magnetically sensitive transistor (HSMST) chips were designed and fabricated on a p-type <100> orientation double-side polished silicon wafer with high resistivity. In addition, a collector load resistor ( R L ) was integrated on the chip, and the resistor converted the collector current ( I C ) to a collector output voltage ( V out ). When I B = 8.0 mA, V DD = 10.0 V, and R L = 4.1 kΩ, the magnetic sensitivity ( S V ) at room temperature and temperature coefficient ( α C ) of the collector current for HSMST were 181 mV/T and -0.11%/°C, respectively. The experimental results show that the magnetic sensitivity and temperature characteristics of the proposed transistor can be obviously improved by the use of a nc-Si:H/c-Si heterojunction as an emitter junction.
authors.affiliation: School of Electronic Engineering, Heilongjiang University, Harbin 150080, China. zhaoxiaofeng@hlju.edu.cn.
authors.forename: Xiaofeng
authors.initials: X
authors.lastname: Zhao
authors.affiliation: School of Electronic Engineering, Heilongjiang University, Harbin 150080, China. 2151246@s.hlju.edu.cn.
authors.forename: Baozeng
authors.initials: B
authors.lastname: Li
authors.affiliation: School of Electronic Engineering, Heilongjiang University, Harbin 150080, China. wendianzhong@hlju.edu.cn.
authors.forename: Dianzhong
authors.initials: D
authors.lastname: Wen
keywords: MEMS technology; magnetic sensitive transistor; nc-Si:H/c-Si heterojunction; temperature characteristics