title: High, Anisotropic, and Substrate-Independent Mobility in Polymer Field-Effect Transistors Based on Preassembled Semiconducting Nanofibrils.
abstract: Achieving nanoscale control over the crystalline structure and morphology of electroactive polymer films and the possibility to transfer them onto any solid substrate are important tasks for the fabrication of high-performance organic/polymeric field-effect transistors (FETs). In this work, we demonstrate that ultrathin active layers preassembled at the water/air interface can possess high, anisotropic, and substrate-independent mobility in polymer FETs. By exploiting a modified approach to the Langmuir-Schaeffer technique, we self-assemble conjugated polymers in fibrillar structures possessing controlled thickness, nanoscale structure, and morphology; these highly ordered nanofibrils can be transferred unaltered onto any arbitrary substrate. We show that FETs based on these films possess high and anisotropic hole mobility approaching 1 cm2V-1s-1along the nanofibrils, being over 1 order of magnitude beyond the state-of-the-art for Langmuir-Schaefer polymer FETs. Significantly, we demonstrate that the FET performances are independent of the chemical nature and dielectric permittivity of the substrate, overcoming a critical limit in the field of polymer FETs. Our method allows the fabrication of ultrathin films for low-cost, high-performance, transparent, and flexible devices supported on any dielectric substrate.
authors.affiliation: University of Strasbourg , CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France.
authors.forename: Sara
authors.initials: S
authors.lastname: Bonacchi
authors.affiliation: University of Strasbourg , CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France.
authors.forename: Marco
authors.initials: M
authors.lastname: Gobbi
authors.affiliation: Istituto per la Microelettronica e Microsistemi (IMM)-Consiglio Nazionale delle Ricerche (CNR) , Via Gobetti 101, 40129 Bologna, Italy.
authors.forename: Laura
authors.initials: L
authors.lastname: Ferlauto
authors.affiliation: University of Strasbourg , CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France.
authors.forename: Marc-Antoine
authors.initials: MA
authors.lastname: Stoeckel
authors.affiliation: Istituto per la Microelettronica e Microsistemi (IMM)-Consiglio Nazionale delle Ricerche (CNR) , Via Gobetti 101, 40129 Bologna, Italy.
authors.forename: Fabiola
authors.initials: F
authors.lastname: Liscio
authors.affiliation: Istituto per la Microelettronica e Microsistemi (IMM)-Consiglio Nazionale delle Ricerche (CNR) , Via Gobetti 101, 40129 Bologna, Italy.
authors.forename: Silvia
authors.initials: S
authors.lastname: Milita
authors.affiliation: University of Strasbourg , CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France.
authors.forename: Emanuele
authors.initials: E
authors.lastname: Orgiu
authors.affiliation: University of Strasbourg , CNRS, ISIS UMR 7006, 8 Allée Gaspard Monge, F-67000 Strasbourg, France.
authors.forename: Paolo
authors.identifier: 0000-0001-6256-8281
authors.initials: P
authors.lastname: Samorì
keywords: Langmuir−Schaefer; conjugated polymers; film anisotropy; organic thin-film transistors; polymer monolayer; semiconductor−dielectric interface