title: Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.
abstract: We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.
authors.affiliation: Center for High Technology Materials, University of New Mexico , 1313 Goddard Street SE, Albuquerque, New Mexico 87106, United States.
authors.forename: Changyi
authors.initials: C
authors.lastname: Li
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Jeremy B
authors.initials: JB
authors.lastname: Wright
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Sheng
authors.initials: S
authors.lastname: Liu
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Ping
authors.initials: P
authors.lastname: Lu
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Jeffrey J
authors.initials: JJ
authors.lastname: Figiel
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Benjamin
authors.initials: B
authors.lastname: Leung
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Weng W
authors.initials: WW
authors.lastname: Chow
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Igal
authors.initials: I
authors.lastname: Brener
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Daniel D
authors.initials: DD
authors.lastname: Koleske
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.|Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: Ting-Shan
authors.initials: TS
authors.lastname: Luk
authors.affiliation: Center for High Technology Materials, University of New Mexico , 1313 Goddard Street SE, Albuquerque, New Mexico 87106, United States.
authors.forename: Daniel F
authors.initials: DF
authors.lastname: Feezell
authors.affiliation: Center for High Technology Materials, University of New Mexico , 1313 Goddard Street SE, Albuquerque, New Mexico 87106, United States.
authors.forename: S R J
authors.initials: SR
authors.lastname: Brueck
authors.affiliation: Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
authors.forename: George T
authors.identifier: 0000-0001-9007-0173
authors.initials: GT
authors.lastname: Wang
mesh_terms: D005708:Gallium / Q000737:chemistry*; D007204:Indium / Q000737:chemistry*; D007834:Lasers; D008027:Light; D053761:Nanocomposites / Q000737:chemistry; D036103:Nanotechnology; D053770:Nanowires / Q000737:chemistry*; D009584:Nitrogen / Q000737:chemistry*; D010316:Particle Size; D012666:Semiconductors; D013329:Structure-Activity Relationship; D013499:Surface Properties
chemical_list: D007204:Indium; D005708:Gallium; D009584:Nitrogen
keywords: GaN; InGaN; Nonpolar; core−shell; laser; nanowire