title: Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory.
abstract: Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Kai
authors.identifier: 0000-0002-4049-4426
authors.initials: K
authors.lastname: Qian
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Roland Yingjie
authors.initials: RY
authors.lastname: Tay
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Meng-Fang
authors.initials: MF
authors.lastname: Lin
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Jingwei
authors.initials: J
authors.lastname: Chen
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Huakai
authors.initials: H
authors.lastname: Li
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Jinjun
authors.initials: J
authors.lastname: Lin
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Jiangxin
authors.initials: J
authors.lastname: Wang
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Guofa
authors.initials: G
authors.lastname: Cai
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Viet Cuong
authors.initials: VC
authors.lastname: Nguyen
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Edwin Hang Tong
authors.initials: EH
authors.lastname: Teo
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Tupei
authors.initials: T
authors.lastname: Chen
authors.affiliation: School of Materials Science and Engineering, and ‡School of Electrical and Electronic Engineering, Nanyang Technological University , 50 Nanyang Avenue, 639798, Singapore.
authors.forename: Pooi See
authors.identifier: 0000-0003-1383-1623
authors.initials: PS
authors.lastname: Lee
keywords: ex situ TEM; graphene; hexagonal boron nitride; indium filament; transferable memory; transparent and flexible memory