title: Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films.
abstract: B20 phase magnetic materials have been of significant interest because they enable magnetic Skyrmions. One major effort in this emerging field is the stabilization of Skyrmions at room temperature and zero magnetic field. We grow phase-pure, high crystalline quality FeGe epitaxial films on Si(111). Hall effect measurements reveal a strong topological Hall effect after subtracting the ordinary and anomalous Hall effects, demonstrating the formation of high density Skyrmions in FeGe films between 5 and 275 K. In particular, a substantial topological Hall effect was observed at a zero magnetic field, showing a robust Skyrmion phase without the need of an external magnetic field.
authors.affiliation: Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
authors.forename: J C
authors.initials: JC
authors.lastname: Gallagher
authors.affiliation: Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
authors.forename: K Y
authors.initials: KY
authors.lastname: Meng
authors.affiliation: Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
authors.forename: J T
authors.initials: JT
authors.lastname: Brangham
authors.affiliation: Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
authors.forename: H L
authors.initials: HL
authors.lastname: Wang
authors.affiliation: Center for Electron Microscopy and Analysis, Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43212, USA.
authors.forename: B D
authors.initials: BD
authors.lastname: Esser
authors.affiliation: Center for Electron Microscopy and Analysis, Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43212, USA.
authors.forename: D W
authors.initials: DW
authors.lastname: McComb
authors.affiliation: Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.
authors.forename: F Y
authors.initials: FY
authors.lastname: Yang