Numerical Modeling of Silicon Photodiodes for High-Accuracy Applications Part I. Simulation Programs.
The suitability of the semiconductor-device modeling program PC-1D for high-accuracy simulation of silicon photodiodes is discussed. A set of user interface programs optimized to support high-accuracy batch-mode operation of PC-1D for modeling the internal quantum efficiency of photodiodes is also described. The optimization includes correction for the dark current under reverse- and forward-bias conditions before calculating the quantum efficiency, and easy access to the highest numerical accuracy available from PC-1D, neither of which is conveniently available with PC-1D's standard user interface.
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Jon
J
Geist
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Deane
D
Chandler-Horowitz
University of Alberta, Alberta, Canada T6G 2G7.
A M
AM
Robinson
University of Alberta, Alberta, Canada T6G 2G7.
C R
CR
James
PC-1D; high accuracy; internal quantum efficiency; photodiode modeling; silicon photodiodes