Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition.
The influences of annealing temperature in N2atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H2O in N2atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si-N bonding at the interface gradually transforms to Si-O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si-O-Al bonding state can be detected in the 900 °C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Long
L
Sun
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China. honglianglu@fudan.edu.cn.|State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China. honglianglu@fudan.edu.cn.
Hong-Liang
HL
Lu
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Hong-Yan
HY
Chen
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Tao
T
Wang
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Xin-Ming
XM
Ji
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Wen-Jun
WJ
Liu
State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China.
Dongxu
D
Zhao
Inorganic Materials Chemistry, Ruhr-University Bochum, 44780, Bochum, Germany.
Anjana
A
Devi
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
Shi-Jin
SJ
Ding
State Key Laboratory of ASIC and System, Institute of Advanced Nanodevices, School of Microelectronics, Fudan University, Shanghai, 200433, China.
David Wei
DW
Zhang