Ferroelectric symmetry-protected multibit memory cell.
The tunability of electrical polarization in ferroelectrics is instrumental to their applications in information-storage devices. The existing ferroelectric memory cells are based on the two-level storage capacity with the standard binary logics. However, the latter have reached its fundamental limitations. Here we propose ferroelectric multibit cells (FMBC) utilizing the ability of multiaxial ferroelectric materials to pin the polarization at a sequence of the multistable states. Employing the catastrophe theory principles we show that these states are symmetry-protected against the information loss and thus realize novel topologically-controlled access memory (TAM). Our findings enable developing a platform for the emergent many-valued non-Boolean information technology and target challenges posed by needs of quantum and neuromorphic computing.
Institute of Electronics, Microelectronics and Nanotechnology (IEMN)-DHS Départment, UMR CNRS 8520, Université des Sciences et Technologies de Lille, 59652 Villeneuve d'Ascq Cedex, France.
Laurent
L
Baudry
University of Picardie, Laboratory of Condensed Matter Physics, Amiens, 80039, France.
Igor
I
Lukyanchuk
Materials Science Division, Argonne National Laboratory, 9700 S. Cass Avenue, Argonne, Illinois 60637, USA.
Valerii M
VM
Vinokur