Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth.
Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. This variation allowed rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.
Department of Physics, Stanford University , Stanford, California 94305, United States.
Yan-Kai
0000-0003-3603-1661
YK
Tzeng
E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States.
Jingyuan Linda
JL
Zhang
Department of Physics, Stanford University , Stanford, California 94305, United States.|Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.
Haiyu
H
Lu
Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Hitoshi
H
Ishiwata
Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Jeremy
J
Dahl
Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Robert M K
RM
Carlson
Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Hao
H
Yan
Institute of Organic Chemistry, Justus-Liebig University , Heinrich-Buff-Ring 17, 35392 Giessen, Germany.
Peter R
PR
Schreiner
E. L. Ginzton Laboratory, Stanford University , Stanford, California 94305, United States.
Jelena
J
Vučković
Department of Physics, Stanford University , Stanford, California 94305, United States.|Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Zhi-Xun
ZX
Shen
Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Science, SLAC National Accelerator Laboratory , 257S Sand Hill Road, Menlo Park, California 94025, United States.
Nicholas
N
Melosh
Department of Physics, Stanford University , Stanford, California 94305, United States.|Department of Molecular and Cellular Physiology, Stanford University , Stanford, California 94305, United States.
Steven
S
Chu
Cr-related center; MPCVD; Si-V center; nanodiamond; single-crystal diamond