Self-Assembly of the Lateral In2Se3/CuInSe2Heterojunction for Enhanced Photodetection.
Layered materials have been found to be promising candidates for next-generation microelectronic and optoelectronic devices due to their unique electrical and optical properties. The p-n junction is an elementary building block for microelectronics and optoelectronics devices. Herein, using the pulsed-laser deposition (PLD) method, we achieve pure In2Se3-based photodetectors and In2Se3/CuInSe2-based photodetectors with a lateral p-n heterojunction. In comparison to that of the pure In2Se3-based photodetector, the photodetectors based on the In2Se3/CuInSe2heterojunction exhibit a tremendous promotion of photodetection performance and obvious rectifying behavior. The photoresponsivity and external quantum efficiency of the fabricated heterojunction-based device under 532 nm light irradiation are 20.1 A/W and 4698%, respectively. These values are about 7.5 times higher than those of our fabricated pure In2Se3-based devices. We attribute this promotion of photodetection to the suitable band structures of In2Se3and CuInSe2, which greatly promote the separation of photoexcited electron-hole pairs. This work suggests an effective way to form lateral p-n junctions, opening up a new scenario for designing and constructing high-performance optoelectronic devices.
State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, Guangdong 510275, P. R. China.
Zhaoqiang
Z
Zheng
State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, Guangdong 510275, P. R. China.
Jiandong
J
Yao
State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University , Guangzhou, Guangdong 510275, P. R. China.
Guowei
http://orcid.org/0000-0003-2141-6630
G
Yang
CuInSe2; In2Se3; lateral junction; layered materials; photodetectors