Growth of All-Wurtzite InP/AlInP Core-Multishell Nanowire Array.
We demonstrated the formation of all-wurtzite (WZ) InP/AlInP core-multishell (CMS) nanowires (NWs) by selective-area growth with the crystal structure transfer method. The CMS NWs consisting of an AlInP-based double heterostructure showed that the crystal structure of the multishell succeeded to the WZ phase from the WZ InP NW by the crystal structure transfer method. Transmission electron microscopy revealed that the core-shell interface had a few stacking faults due to lattice mismatch. In addition, lattice constants of WZ AlInP with a variation of Al content were determined by X-ray diffraction reciprocal space mappings, and the WZ AlInP shell had tensile strain along the c-axis. The WZ AlInP shells (Al content: 25-54%) showed cathode luminescence emissions at 1.6-2.1 eV, possibly related to In-rich domains due to composition fluctuation in the WZ AlInP shell.
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.
Fumiya
0000-0002-1838-4933
F
Ishizaka
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.
Yoshihiro
Y
Hiraya
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.|PRESTO, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan.
Katsuhiro
K
Tomioka
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.
Junichi
J
Motohisa
Graduate School of Information Science and Technology, and Research Center for Integrated Quantum Electronics (RCIQE), Hokkaido University , North 13 West 8, Sapporo 060-8628, Japan.
Takashi
T
Fukui
III−V; MOVPE; nanowire; selective-area growth; wurtzite