Tunable Doping in Hydrogenated Single Layered Molybdenum Disulfide.
Structural defects in the molybdenum disulfide (MoS2) monolayer are widely known for strongly altering its properties. Therefore, a deep understanding of these structural defects and how they affect MoS2electronic properties is of fundamental importance. Here, we report on the incorporation of atomic hydrogen in monolayered MoS2to tune its structural defects. We demonstrate that the electronic properties of single layer MoS2can be tuned from the intrinsic electron (n) to hole (p) doping via controlled exposure to atomic hydrogen at room temperature. Moreover, this hydrogenation process represents a viable technique to completely saturate the sulfur vacancies present in the MoS2flakes. The successful incorporation of hydrogen in MoS2leads to the modification of the electronic properties as evidenced by high resolution X-ray photoemission spectroscopy and density functional theory calculations. Micro-Raman spectroscopy and angle resolved photoemission spectroscopy measurements show the high quality of the hydrogenated MoS2confirming the efficiency of our hydrogenation process. These results demonstrate that the MoS2hydrogenation could be a significant and efficient way to achieve tunable doping of transition metal dichalcogenides (TMD) materials with non-TMD elements.
Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France.
Debora
D
Pierucci
Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France.
Hugo
H
Henck
Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France.
Zeineb
Z
Ben Aziza
Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States.
Carl H
CH
Naylor
Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States.
Adrian
A
Balan
Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France.
Julien E
JE
Rault
Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France.
Mathieu G
MG
Silly
SPEC, CEA, CNRS, Université Paris-Saclay , CEA Saclay, F91191 Gif-sur-Yvette Cedex, France.
Yannick J
YJ
Dappe
Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France.
François
F
Bertran
Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France.
Patrick
P
Le Fèvre
Synchrotron-SOLEIL , Saint-Aubin, BP48, F91192 Gif sur Yvette Cedex, France.
Fausto
F
Sirotti
Department of Physics and Astronomy, University of Pennsylvania , 209S 33rd Street, Philadelphia, Pennsylvania 19104, United States.
A T Charlie
AT
Johnson
Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay , C2N - Marcoussis, F91460 Marcoussis, France.
Abdelkarim
0000-0002-1898-2765
A
Ouerghi
atomic hydrogenation; defects; doping; electronic properties; n and p doped MoS2; spectroscopy