An Accurate Value for the Absorption Coefficient of Silicon at 633 nm.
High-accuracy transmission measurements at an optical wavelength of 633 nm and mechanical measurements of the thickness of a 13-µm thick silicon-crystal film have been used to calculate the absorption and extinction coefficients of silicon at 633 nm. The results are 3105±62 cm-1and 0.01564±0.00031, respectively. These results are about 15% less than current handbook data for the same quantities, but are in good agreement with a recent fit to one set of data described in the literature.
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Jon
J
Geist
Science Applications International Corporation, 4161 Campus Point Court, San Diego, CA 92121.
A Russell
AR
Schaefer
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Jun-Feng
JF
Song
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Yun Hsia
YH
Wang
National Institute of Standards and Technology, Gaithersburg, MD 20899.
Edward F
EF
Zalewski
HeNe; absorption coefficient; etch stop; extinction coefficient; high accuracy; silicon