Carrier-Number-Fluctuation Induced Ultralow 1/f Noise Level in Top-Gated Graphene Field Effect Transistor.
A top-gated graphene FET with an ultralow 1/f noise level of 1.8 × 10-12μm2Hz1-(f = 10 Hz) has been fabricated. The noise has the least value at Dirac point, it then increases fast when the current deviates from that at Dirac point, the noise slightly decreases at large current. The phenomenon can be understood by the carrier-number-fluctuation induced low frequency noise, which caused by the trapping-detrapping processes of the carriers. Further analysis suggests that the effect trap density depends on the location of Fermi level in graphene channel. The study has provided guidance for suppressing the 1/f noise in graphene-based applications.
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.|Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences , Shanghai 200050, China.
Songang
http://orcid.org/0000-0003-4298-1575
S
Peng
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.
Zhi
Z
Jin
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.|Key Laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences , Shanghai 200050, China.
Dayong
D
Zhang
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.
Jingyuan
J
Shi
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.
Dacheng
D
Mao
High-Frequency High-Voltage Device and Integrated Circuits R&D Center, Institute of Microelectronics, Chinese Academy of Sciences , Beijing 100029, China.
Shaoqing
S
Wang
Key Laboratory of Functional Material for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences , Shanghai 200050, China.
Guanghui
G
Yu
1/f noise; carrier fluctuation; charge trap; graphene; transistor