Spectroscopic evidence that Li doping creates shallow VZnin ZnO.
The simultaneous introduction of shallow acceptors and elimination of donor compensation is the key issue toward achieving p-type ZnO. Herein, through accurate control of the Li dopant configuration and systematic spectroscopy characterization, we obtain direct evidence that Li doping creates isolated VZnin ZnO with a luminescence peak around 414 nm (∼3.0 eV), and at the same time, removes donors. Interestingly, the same defect emission is also created by simple H2O2treatment and appeared in a ZnO single crystal with abundant metal vacancies, unambiguously demonstrating its shallow acceptor characteristic.
College of Astronautics, Nanjing University of Aeronautics and Astronautics, Nanjing, P. R. China. hitljp@gmail.com.
Jinpeng
http://orcid.org/0000-0002-7119-6691
J
Lv
Department of Chemistry, Dartmouth College, Hanover, NH 03755, USA.
Yuan
Y
Liu