In Situ Patterning of Ultrasharp Dopant Profiles in Silicon.
We develop a method for patterning a buried two-dimensional electron gas (2DEG) in silicon using low kinetic energy electron stimulated desorption (LEESD) of a monohydride resist mask. A buried 2DEG forms as a result of placing a dense and narrow profile of phosphorus dopants beneath the silicon surface; a so-called δ-layer. Such 2D dopant profiles have previously been studied theoretically, and by angle-resolved photoemission spectroscopy, and have been shown to host a 2DEG with properties desirable for atomic-scale devices and quantum computation applications. Here we outline a patterning method based on low kinetic energy electron beam lithography, combined with in situ characterization, and demonstrate the formation of patterned features with dopant concentrations sufficient to create localized 2DEG states.
Department of Physics, Norwegian University of Science and Technology (NTNU) , N-7491 Trondheim, Norway.|Department of Physics, Aberystwyth University , SY23 3BZ Aberystwyth, United Kingdom.
Simon P
0000-0002-0856-6020
SP
Cooil
Department of Physics, Norwegian University of Science and Technology (NTNU) , N-7491 Trondheim, Norway.|School of Physics and Astronomy (SUPA), University of St. Andrews , St. Andrews, Fife KY16 9SS, United Kingdom.
Federico
F
Mazzola
Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
Hagen W
HW
Klemm
Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
Gina
G
Peschel
MAX IV Laboratory, Lund University , 221 00 Lund, Sweden.
Yuran R
YR
Niu
MAX IV Laboratory, Lund University , 221 00 Lund, Sweden.
Alexei A
AA
Zakharov
Centre of Excellence for Quantum Computation and Communication Technology, School of Physics, University of New South Wales , Sydney, New South Wales 2052, Australia.
Michelle Y
MY
Simmons
Fritz-Harber-Insitute Max-Planck Society , Faradayweg 4-6 14195 Berlin, Germany.
Thomas
0000-0003-4389-2080
T
Schmidt
Department of Physics, Aberystwyth University , SY23 3BZ Aberystwyth, United Kingdom.
D Andrew
DA
Evans
Department of Physics and Astronomy, Interdisciplinary Nanoscience Center (iNANO), University of Aarhus , 8000 Aarhus C, Denmark.
Jill A
JA
Miwa
Department of Physics, Norwegian University of Science and Technology (NTNU) , N-7491 Trondheim, Norway.
Justin W
JW
Wells
2DEG; LEEM; PEEM; delta layers; low-energy electron patterning; silicon quantum confinement