Thickness-dependent in-plane thermal conductivity of suspended MoS2grown by chemical vapor deposition.
The in-plane thermal conductivities of suspended monolayer, bilayer, and multilayer MoS2films were measured in vacuum by using non-invasive Raman spectroscopy. The samples were prepared by chemical vapor deposition (CVD) and transferred onto preformed cavities on a Au-coated SiO2/Si substrate. The measured thermal conductivity (13.3 ± 1.4 W m-1K-1) of the suspended monolayer MoS2was below the previously reported value of 34.5 ± 4 W m-1K-1. We demonstrate that this discrepancy arises from the experimental conditions that differ from vacuum conditions and small absorbance. The measured in-plane thermal conductivity of the suspended MoS2films increased in proportion to the number of layers, reaching 43.4 ± 9.1 W m-1K-1for the multilayer MoS2, which explicitly follows the Fuchs-Sondheimer suppression function. The increase in the thermal conductivity with the number of MoS2layers is explained by the reduced phonon boundary scattering. We also observe that the Fuchs-Sondheimer model works for the thickness-dependent thermal conductivity of MoS2down to 10 nm in thickness at room temperature, yielding a phonon mean free path of 17 nm for bulk.
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Jung Jun
JJ
Bae
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Hye Yun
HY
Jeong
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Gang Hee
GH
Han
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Jaesu
J
Kim
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Hyun
H
Kim
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Min Su
MS
Kim
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Byoung Hee
BH
Moon
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Seong Chu
SC
Lim
Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Suwon 16419, Republic of Korea. seonglim@skku.edu leeyoung@skku.edu and Department of Energy Science, Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea and Department of Physics, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea.
Young Hee
http://orcid.org/0000-0001-7403-8157
YH
Lee