Temperature-Related Morphological Evolution of MoS2Domains on Graphene and Electron Transfer within Heterostructures.
Other than the well-known sulfurization of molybdate compound to synthesize molybdenum disulfide (MoS2) layers, the dynamic process in the whole crystalline growth from nuclei to triangular domains has been rarely experimentally explored. Here, a competing sulfur-capture principle jointly with strict epitaxial mechanism is first proposed for the initial topography evolution and the final intrinsic highly oriented growth of triangular MoS2domains with Mo or S terminations on the graphene (Gr) template. Additionally, potential distributions on MoS2domains and bare Gr are presented to be different due to the charge transfer within heterostructures. The findings offer the mechanism of templated growth of 2D transition metal dichalcogenides, and provide general principles in syntheses of vertical 2D heterostructures that can be applied to electronics.
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Wen
W
Wan
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Linjie
L
Zhan
School of Chemistry and Chemical Engineering, Xiamen University, Xiamen, Fujian, 361005, China.
Binbin
B
Xu
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Feng
F
Zhao
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Zhenwei
Z
Zhu
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Yinghui
Y
Zhou
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Zhilin
Z
Yang
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Tienmo
T
Shih
Department of Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Xiamen University, Xiamen, Fujian, 361005, China.
Weiwei
W
Cai
competing principles; electron transfer; evolution; graphene; molybdenum disulfide