Engineering the Structural and Electronic Phases of MoTe2through W Substitution.
MoTe2is an exfoliable transition metal dichalcogenide (TMD) that crystallizes in three symmetries: the semiconducting trigonal-prismatic 2H- or α-phase, the semimetallic and monoclinic 1T'- or β-phase, and the semimetallic orthorhombic γ-structure. The 2H-phase displays a band gap of ∼1 eV making it appealing for flexible and transparent optoelectronics. The γ-phase is predicted to possess unique topological properties that might lead to topologically protected nondissipative transport channels. Recently, it was argued that it is possible to locally induce phase-transformations in TMDs, through chemical doping, local heating, or electric-field to achieve ohmic contacts or to induce useful functionalities such as electronic phase-change memory elements. The combination of semiconducting and topological elements based upon the same compound might produce a new generation of high performance, low dissipation optoelectronic elements. Here, we show that it is possible to engineer the phases of MoTe2through W substitution by unveiling the phase-diagram of the Mo1-xWxTe2solid solution, which displays a semiconducting to semimetallic transition as a function of x. We find that a small critical W concentration xc∼ 8% stabilizes the γ-phase at room temperature. This suggests that crystals with x close to xcmight be particularly susceptible to phase transformations induced by an external perturbation, for example, an electric field. Photoemission spectroscopy, indicates that the γ-phase possesses a Fermi surface akin to that of WTe2.
National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.|Department of Physics, Florida State University , Tallahassee, Florida 32306, United States.
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Rhodes
Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
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DA
Chenet
Department of Materials Science and Engineering, University of Illinois Urbana-Champaign , Urbana, Illinois 61801, United States.
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BE
Janicek
Department of Chemistry, Stanford University , Stanford, California 94305-4401, United States.
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Nyby
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Y
Lin
W
W
Jin
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D
Edelberg
Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
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0000-0002-1236-187X
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Mannebach
Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
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Finney
Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
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Antony
Materials Research Science and Engineering Center, Columbia University , New York, New York 10027 United States.|Department of Science and Mathematics, SUNY Fashion Institute of Technology , New York, New York 10001 United States.
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Schiros
Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States.
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Klarr
Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States.
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Mazzoni
Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States.
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Chin
National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.|Department of Physics, Florida State University , Tallahassee, Florida 32306, United States.
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Chiu
National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.|Department of Physics, Florida State University , Tallahassee, Florida 32306, United States.
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Zheng
National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.|Department of Physics, Florida State University , Tallahassee, Florida 32306, United States.
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Zhang
Department of Applied Physics, Stanford University , Stanford, California 94305-4090, United States.|Stanford PULSE Institute, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
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Ernst
Department of Electrical Engineering, Columbia University , New York, New York 10027, United States.
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Dadap
Center for Functional Nanomaterials, Brookhaven National Laboratory , Upton, New York 11973-5000, United States.
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Tong
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
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J
Ma
Department of Physics, Renmin University of China , Beijing 100872, China.
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R
Lou
Department of Physics, Renmin University of China , Beijing 100872, China.
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Wang
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
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T
Qian
Beijing National Laboratory for Condensed Matter Physics, and Institute of Physics, Chinese Academy of Sciences , Beijing 100190, China.
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H
Ding
Department of Electrical Engineering, Columbia University , New York, New York 10027, United States.
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Osgood
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Paley
Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.|Stanford PULSE Institute, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.|Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States.
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Lindenberg
Department of Mechanical Science and Engineering, University of Illinois Urbana-Champaign , Urbana, Illinois 61801, United States.
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PY
Huang
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Pasupathy
Sensors and Electronic Devices Directorate, United States Army Research Laboratory , Adelphi, Maryland 20723, United States.
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M
Dubey
Department of Mechanical Engineering, Columbia University , New York, New York 10027, United States.
J
J
Hone
National High Magnetic Field Laboratory, Florida State University , Tallahassee, Florida 32310, United States.
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0000-0002-5209-0293
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Balicas
Raman spectroscopy; Transition-metal-dichalcogenides; Weyl semimetals; electron microscopy; phase-transformations; photoemission spectroscopy