Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate.
We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch®Magic™tape as a flexible substrate. The memory devices consist of double active layers of Al2O3with a structure of Au/Al2O3/Au/Al2O3/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 104, endurance over 200 cycles of reading/writing processes, and retention times of over 104s in both the flat and bent configurations.
Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea.
Woocheol
W
Lee
Jingon
J
Jang
Younggul
Y
Song
Kyungjune
K
Cho
Daekyoung
D
Yoo
Youngrok
Y
Kim
Seungjun
S
Chung
Takhee
T
Lee