Bright Room-Temperature Single-Photon Emission from Defects in Gallium Nitride.
Room-temperature quantum emitters in gallium nitride (GaN) are reported. The emitters originate from cubic inclusions in hexagonal lattice and exhibit narrowband luminescence in the red spectral range. The sources are found in different GaN substrates, and therefore are promising for scalable quantum technologies.
School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
Amanuel M
AM
Berhane
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
Kwang-Yong
KY
Jeong
Institute for Solid State Physics and Optics, Wigner RCP of the Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary.
Zoltán
Z
Bodrog
School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
Saskia
S
Fiedler
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
Tim
T
Schröder
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
Noelia Vico
NV
Triviño
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
Tomás
T
Palacios
Institute for Solid State Physics and Optics, Wigner RCP of the Hungarian Academy of Sciences, Budapest, POB 49, H-1525, Hungary.
Adam
A
Gali
School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
Milos
M
Toth
Department of Electrical Engineering and Computer Science, MIT, Cambridge, MA, 02139, USA.
Dirk
D
Englund
School of Mathematical and Physical Sciences, University of Technology Sydney, Ultimo, New South Wales, 2007, Australia.
Igor
I
Aharonovich
cubic inclusions; gallium nitride wafer; narrow linewidth; point defects; single-photon sources