Direct Observation of Dual-Filament Switching Behaviors in Ta2O5-Based Memristors.
The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta2O5/Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Chia-Fu
CF
Chang
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Jui-Yuan
JY
Chen
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Chun-Wei
CW
Huang
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Chung-Hua
CH
Chiu
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Ting-Yi
TY
Lin
Department of Physics, Tamkang University, 151 Ying Chuan Road, 251, Taipei, Taiwan.
Ping-Hung
PH
Yeh
Department of Materials Science and Engineering, National Chiao Tung University, 1001 University Road, 30010, Hsinchu, Taiwan.
Wen-Wei
WW
Wu
RRAM; Ta2O5; dual filaments; hydroxide; in situ TEM; memristors