Improved sensing characteristics of dual-gate transistor sensor using silicon nanowire arrays defined by nanoimprint lithography.
This work describes the construction of a sensitive, stable, and label-free sensor based on a dual-gate field-effect transistor (DG FET), in which uniformly distributed and size-controlled silicon nanowire (SiNW) arrays by nanoimprint lithography act as conductor channels. Compared to previous DG FETs with a planar-type silicon channel layer, the constructed SiNW DG FETs exhibited superior electrical properties including a higher capacitive-coupling ratio of 18.0 and a lower off-state leakage current under high-temperature stress. In addition, while the conventional planar single-gate (SG) FET- and planar DG FET-based pH sensors showed the sensitivities of 56.7 mV/pH and 439.3 mV/pH, respectively, the SiNW DG FET-based pH sensors showed not only a higher sensitivity of 984.1 mV/pH, but also a lower drift rate of 0.8% for pH-sensitivity. This demonstrates that the SiNW DG FETs simultaneously achieve high sensitivity and stability, with significant potential for future biosensing applications.
Department of Electronic Materials Engineering, Kwangwoon University , Seoul , Republic of Korea.
Cheol-Min
CM
Lim
Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB) , Daejeon , Republic of Korea.
In-Kyu
IK
Lee
Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB) , Daejeon , Republic of Korea.
Ki Joong
KJ
Lee
Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB) , Daejeon , Republic of Korea.
Young Kyoung
YK
Oh
Hazards Monitoring BioNano Research Center, Korea Research Institute of Bioscience & Biotechnology (KRIBB) , Daejeon , Republic of Korea.
Yong-Beom
YB
Shin
Department of Electronic Materials Engineering, Kwangwoon University , Seoul , Republic of Korea.
Won-Ju
WJ
Cho
201 Electronics; 40 Optical; 600 Others: electronic device; Dual-gate field-effect transistor; Semiconductor / TCOs; capacitive coupling; ion-sensitive field-effect transistor; magnetic and electronic device materials; nanoimprint lithography; pH sensor; silicon nanowire