Plasma-assisted atomic layer deposition of conformal Pt films in high aspect ratio trenches.
To date, conventional thermal atomic layer deposition (ALD) has been the method of choice to deposit high-quality Pt thin films grown typically from (MeCp)PtMe3vapor and O2gas at 300 °C. Plasma-assisted ALD of Pt using O2plasma can offer several advantages over thermal ALD, such as faster nucleation and deposition at lower temperatures. In this work, it is demonstrated that plasma-assisted ALD at 300 °C also allows for the deposition of highly conformal Pt films in trenches with high aspect ratio ranging from 3 to 34. Scanning electron microscopy inspection revealed that the conformality of the deposited Pt films was 100% in trenches with aspect ratio (AR) up to 34. These results were corroborated by high-precision layer thickness measurements by transmission electron microscopy for trenches with an aspect ratio of 22. The role of the surface recombination of O-radicals and the contribution of thermal ALD reactions is discussed.
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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Erkens
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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Verheijen
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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0000000322844477
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Knoops
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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Keuning
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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0000000339257041
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Roozeboom
Eindhoven University of Technology, P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
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Kessels