Study of a SiGeSn/GeSn/SiGeSn structure toward direct bandgap type-I quantum well for all group-IV optoelectronics.
A SiGeSn/GeSn/SiGeSn single quantum well structure was grown using an industry standard chemical vapor deposition reactor with low-cost commercially available precursors. The material characterization revealed the precisely controlled material growth process. Temperature-dependent photoluminescence spectra were correlated with band structure calculation for a structure accurately determined by high-resolution x-ray diffraction and transmission electron microscopy. Based on the result, a systematic study of SiGeSn and GeSn bandgap energy separation and barrier heights versus material compositions and strain was conducted, leading to a practical design of a type-I direct bandgap quantum well.
Seyed Amir
SA
Ghetmiri
Yiyin
Y
Zhou
Joe
J
Margetis
Sattar
S
Al-Kabi
Wei
W
Dou
Aboozar
A
Mosleh
Wei
W
Du
Andrian
A
Kuchuk
Jifeng
J
Liu
Greg
G
Sun
Richard A
RA
Soref
John
J
Tolle
Hameed A
HA
Naseem
Baohua
B
Li
Mansour
M
Mortazavi
Shui-Qing
SQ
Yu