InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices.
Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of GaxIn1-xSb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the GaxIn1-xSb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.
Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Diana
0000-0002-6371-8285
D
Car
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Sonia
S
Conesa-Boj
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Hao
H
Zhang
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Roy L M
RL
Op Het Veld
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Michiel W A
MW
de Moor
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Elham M T
EM
Fadaly
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Önder
Ö
Gül
Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands.
Sebastian
S
Kölling
CNRS-LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France.
Sebastien R
SR
Plissard
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Vigdis
V
Toresen
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Michael T
MT
Wimmer
Advanced Materials Laboratory, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan.
Kenji
0000-0003-3701-8119
K
Watanabe
Advanced Materials Laboratory, National Institute for Materials Science , 1-1 Namiki, Tsukuba 305-0044, Japan.
Takashi
T
Taniguchi
Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Leo P
LP
Kouwenhoven
Department of Applied Physics, Eindhoven University of Technology , P.O. Box 513, 5600 MB Eindhoven, The Netherlands.|Kavli Institute of Nanoscience, Delft University of Technology , 2628CJ Delft, The Netherlands.
Erik P A M
EP
Bakkers
Semiconductor nanowire; axial heterostructure; band engineering; indium antimonide; strain mapping; tunnel barrier