Effect of Extrinsically Introduced Passive Interface Layer on the Performance of Ferroelectric Tunnel Junctions.
We report the effect of the top electrode/functional layer interface on the performance of ferroelectric tunnel junctions. Ex situ and in situ fabrication process were used to fabricate the top Pt electrode. With the ex situ fabrication process, one passive layer at the top interface would be induced. Our experimental results show that the passive interface layer of the ex situ devices increases the coercive voltage of the functional BaTiO3layer and decreases the tunneling current magnitude. However, the ex situ tunneling devices possess more than 1000 times larger ON/OFF ratios than that of the in situ devices with the same size of top electrode.
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.|NUSNNI-Nanocore, National University of Singapore , 117411 Singapore.
Rui
http://orcid.org/0000-0002-3733-8908
R
Guo
Department of Electrical and Computer Engineering, National University of Singapore , 117583 Singapore.
Ying
Y
Wang
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Herng Yau
HY
Yoong
Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR) , 2 Fusionopolis Way #08-01 Innovis, 138634 Singapore.
Jianwei
J
Chai
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Han
H
Wang
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Weinan
W
Lin
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Shaohai
S
Chen
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Xiaobing
X
Yan
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.|NUSNNI-Nanocore, National University of Singapore , 117411 Singapore.|Department of Electrical and Computer Engineering, National University of Singapore , 117583 Singapore.|Department of Physics, National University of Singapore , 117542 Singapore.|NUS Graduate School for Integrative Science and Engineering, National University of Singapore , 117576 Singapore.
Thirumalai
T
Venkatesan
NUSNNI-Nanocore, National University of Singapore , 117411 Singapore.|Department of Physics, National University of Singapore , 117542 Singapore.
Ariando
Department of Physics and Astronomy and Nebraska Center for Materials and Nanoscience, University of Nebraska , Lincoln, Nebraska 68588-0299, United States.
Alexei
A
Gruverman
Department of Electrical and Computer Engineering, National University of Singapore , 117583 Singapore.
Yihong
Y
Wu
Department of Materials Science and Engineering, National University of Singapore , 117575 Singapore.
Jingsheng
J
Chen
ON/OFF ratios; ex situ fabrication process; ferroelectric tunnel junctions; in situ fabrication process; passive interface layer