A graphene barristor using nitrogen profile controlled ZnO Schottky contacts.
We have successfully demonstrated a graphene-ZnO:N Schottky barristor. The barrier height between graphene and ZnO:N could be modulated by a buried gate electrode in the range of 0.5-0.73 eV, and an on-off ratio of up to 107was achieved. By using a nitrogen-doped ZnO film as a Schottky contact material, the stability problem of previously reported graphene barristors could be greatly alleviated and a facile route to build a top-down processed graphene barristor was realized with a very low heat cycle. This device will be instrumental when implementing logic functions in systems requiring high-performance logic devices fabricated with a low temperature fabrication process such as back-end integrated logic devices or flexible devices on soft substrates.
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Hyeon Jun
HJ
Hwang
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Kyoung Eun
KE
Chang
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Won Beom
WB
Yoo
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Chang Hoo
CH
Shim
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Sang Kyung
SK
Lee
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Jin Ho
JH
Yang
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
So-Young
SY
Kim
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr.
Yongsu
Y
Lee
Center for Emerging Electric Devices and Systems, Departmant of Nanobio Materials and Electronics, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea.
Chunhum
C
Cho
Center for Emerging Electric Devices and Systems, School of Materials Science and Engineering, Gwangju Institute of Science and Technology, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea. bhl@gist.ac.kr and Center for Emerging Electric Devices and Systems, Departmant of Nanobio Materials and Electronics, Oryong-dong 1, Buk-gu, Gwangju 500-712, Korea.
Byoung Hun
http://orcid.org/0000-0002-6654-4671
BH
Lee