Impurity and silicate formation dependence on O3pulse time and the growth temperature in atomic-layer-deposited La2O3thin films.
Atomic-layer-deposited La2O3films were grown on Si with different O3pulse times and growth temperatures. The interfacial reactions and impurity behaviors were observed using in situ X-ray photoelectron spectroscopy. Longer pulse time of O3formed the solid SiO2interfacial barrier layer, which suppressed La-silicate formation. Meanwhile, the carboxyl compound acting as an impurity phase was replaced with LaCO3on increasing the O3pulse time due to further oxidation and reaction of La. Higher growth temperatures enhanced La-silicate formation by mixed diffusion of Si and La2O3, during which most of the La2O3phase was consumed at 400 °C. C and N impurities decreased with increasing growth temperature and completely disappear at 400 °C.
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
Tae Joo
TJ
Park
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
Young-Chul
0000000194775728
YC
Byun
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
Robert M
RM
Wallace
Department of Materials Science and Engineering, University of Texas at Dallas, Richardson, Texas 75080, USA.
Jiyoung
0000000157208708
J
Kim