Solution-processable poly(N-vinylcarbazole)-covalently grafted MoS2nanosheets for nonvolatile rewritable memory devices.
A novel nonvolatile rewritable memory device based on the soluble poly(N-vinylcarbazole)-chemically modified MoS2nanosheets (MoS2-PVK) was fabricated with the configuration of Au/MoS2-PVK/ITO. This is the first example of polymer covalently modified MoS2nanosheet-based memory devices. As expected, this device exhibited a typical storage performance of nonvolatile rewritable memory, with a turn-on voltage of -1.54 V and an ON/OFF current ratio of 4 × 102. After annealing at 80 °C for 1 h under a nitrogen atmosphere, a high ON/OFF current ratio (up to 3 × 104) and a lower turn-on voltage (-1.31 V), which are among the best reported for MoS2-based polymer/organic memory devices, were achieved due to enhanced crystallization of PVK, which induced a more efficient intramolecular charge transfer effect between PVK and MoS2during the annealing process. The effect of film thickness on the current-voltage characteristics of the MoS2-PVK-based devices and the memory performance of the MoS2/PVK blends-based devices have also been explored.
Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
Fei
F
Fan
Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
Bin
B
Zhang
Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
Yaming
Y
Cao
Key Laboratory for Advanced Materials, Institute of Applied Chemistry, East China University of Science and Technology, 130 Meilong Road, Shanghai 200237, China. chentangyu@yahoo.com.
Yu
http://orcid.org/0000-0002-7316-8029
Y
Chen