title: Influence of the vicinal surface on the anisotropic dielectric properties of highly epitaxial Ba0.7Sr0.3TiO3thin films.
abstract: Epitaxial thin films of Ba0.7Sr0.3TiO3(BST) were grown on the designed vicinal single-crystal LaAlO3(001) substrates to systematically investigate the evolution of microstructures and in-plane dielectric properties of the as-grown films under the strains induced by surface step terraces. Anisotropic dielectric properties were observed, which can be attributed to different tetragonalities induced by vicinal LaAlO3substrates with miscut orientations along the [100] and [110] directions with different miscut angles of 1.0°, 2.75° and 5.0°. A terrace geometric model with both compressive and tensile strained domains in the BST film was established, which is in good agreement with the experimental results. Our experimental studies not only shed new light on the heteroepitaxial growth mechanism, but also provide a promising platform for the design and integration of high performance device applications.
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Guang
authors.identifier: http://orcid.org/0000-0002-6662-2422
authors.initials: G
authors.lastname: Yao
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Yanda
authors.initials: Y
authors.lastname: Ji
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Weizheng
authors.initials: W
authors.lastname: Liang
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Min
authors.initials: M
authors.lastname: Gao
authors.affiliation: Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: Shengliang
authors.initials: S
authors.lastname: Zheng
authors.affiliation: Department of Materials Physics and Chemistry, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: You
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Handong
authors.initials: H
authors.lastname: Li
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Zhiming
authors.initials: Z
authors.lastname: Wang
authors.affiliation: Department of Physics and Astronomy, University of Texas at San Antonio, San Antonio, Texas 78249, USA.
authors.forename: Chonglin
authors.initials: C
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Electronic Thin films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, P. R. China. linyuan@uestc.edu.cn.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Lin