title: Electrochemical Control of Copper Intercalation into Nanoscale Bi2Se3.
abstract: Intercalation of exotic atoms or molecules into the layered materials remains an extensively investigated subject in current physics and chemistry. However, traditionally melt-growth and chemical interaction strategies are either limited by insufficiency of intercalant concentrations or destitute of accurate controllability. Here, we have developed a general electrochemical intercalation method to efficaciously regulate the concentration of zerovalent copper atoms into layered Bi2Se3, followed by comprehensive experimental characterization and analyses. Up to 57% copper atoms (Cu6.7Bi2Se3) can be intercalated with no disruption to the host lattice. Meanwhile the unconventional resistance dip accompanied by a hysteresis loop below 40 K, as well as the emergence of new Raman peak in CuxBi2Se3, is a distinct manifestation of the interplay between intercalated Cu atoms with Bi2Se3host. Our work demonstrates a new methodology to study fundamentally new and unexpected physical behaviors in intercalated metastable materials.
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Jinsong
authors.identifier: 0000-0002-3601-4995
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Jie
authors.initials: J
authors.lastname: Sun
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Yanbin
authors.initials: Y
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.
authors.forename: Feifei
authors.initials: F
authors.lastname: Shi
authors.affiliation: Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States.|Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory , 2575 Sand Hill Road, Menlo Park, California 94025, United States.
authors.forename: Yi
authors.initials: Y
authors.lastname: Cui
keywords: Electrochemical intercalation; bismuth selenide; hysteresis; resistance dip; two-dimensional materials