title: Nitrogen-doped amorphous carbon-silicon core-shell structures for high-power supercapacitor electrodes.
abstract: We report successful deposition of nitrogen-doped amorphous carbon films to realize high-power core-shell supercapacitor electrodes. A catalyst-free method is proposed to deposit large-area stable, highly conformal and highly conductive nitrogen-doped amorphous carbon (a-C:N) films by means of a direct-current plasma enhanced chemical vapor deposition technique (DC-PECVD). This approach exploits C2H2and N2gases as the sources of carbon and nitrogen constituents and can be applied to various micro and nanostructures. Although as-deposited a-C:N films have a porous surface, their porosity can be significantly improved through a modification process consisting of Ni-assisted annealing and etching steps. The electrochemical analyses demonstrated the superior performance of the modified a-C:N as a supercapacitor active material, where specific capacitance densities as high as 42 F/g and 8.5 mF/cm2(45 F/cm3) on silicon microrod arrays were achieved. Furthermore, this supercapacitor electrode showed less than 6% degradation of capacitance over 5000 cycles of a galvanostatic charge-discharge test. It also exhibited a relatively high energy density of 2.3 × 103Wh/m3(8.3 × 106J/m3) and ultra-high power density of 2.6 × 108W/m3which is among the highest reported values.
authors.affiliation: Nanofabricated Energy Devices Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran.|Thin film and Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran.
authors.forename: S A Safiabadi
authors.initials: SA
authors.lastname: Tali
authors.affiliation: Department of Electrical and Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran.
authors.forename: S
authors.initials: S
authors.lastname: Soleimani-Amiri
authors.affiliation: Nanofabricated Energy Devices Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran.|Thin film and Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran.
authors.forename: Z
authors.initials: Z
authors.lastname: Sanaee
authors.affiliation: Thin film and Nanoelectronics Laboratory, Department of Electrical and Computer Engineering, University of Tehran, Tehran, Iran.
authors.forename: S
authors.initials: S
authors.lastname: Mohajerzadeh