title: A new model for in situ nitrogen incorporation into 4H-SiC during epitaxy.
abstract: Nitrogen doping of 4H-SiC during vapor phase epitaxy is still lacking of a general model explaining the apparently contradictory trends obtained by different teams. In this paper, the evolutions of nitrogen incorporation (on both polar Si and C faces) as a function of the main growth parameters (C/Si ratio, temperature, pressure and growth rate) are reviewed and explained using a model based on surface exchanges between the gas phase and the uppermost 4H-SiC atomic layers. In this model, N incorporation is driven mainly by the transient formation of C vacancies, due to H2etching, at the surface or near the surface. It is shown that all the growth parameters are influencing the probability of C vacancies formation in a similar manner as they do for N incorporation. The surface exchange model proposes a new framework for explaining the experimental results even beyond the commonly accepted reactor type dependency.
authors.affiliation: Université de Lyon, Université Claude Bernard Lyon1, CNRS, Laboratoire des Multimatériaux et Interfaces (LMI, UMR 5615), 43 bd du 11 Novembre 1918, F-69622 Villeurbanne, France.
authors.forename: Gabriel
authors.initials: G
authors.lastname: Ferro
authors.affiliation: Université Grenoble Alpes, CNRS, LMGP, F-38000 Grenoble, France.|Université Grenoble Alpes, CNRS, Institut Néel, F-38000 Grenoble, France.
authors.forename: Didier
authors.initials: D
authors.lastname: Chaussende