title: Fluctuation microscopy analysis of amorphous silicon models.
abstract: Using computer-generated models we discuss the use of fluctuation electron microscopy (FEM) to identify the structure of amorphous silicon. We show that a combination of variable resolution FEM to measure the correlation length, with correlograph analysis to obtain the structural motif, can pin down structural correlations. We introduce the method of correlograph variance as a promising means of independently measuring the volume fraction of a paracrystalline composite. From comparisons with published data, we affirm that only a composite material of paracrystalline and continuous random network that is substantially paracrystalline could explain the existing experimental data, and point the way to more precise measurements on amorphous semiconductors. The results are of general interest for other classes of disordered materials.
authors.affiliation: Northeastern University, Department of Physics, Boston MA 02115, USA; FAMU/FSU Joint College of Engineering, 225 Pottsdamer Street, Tallahassee, FL 32310, United States. Electronic address: jmgibson@fsu.edu.
authors.forename: J M
authors.initials: JM
authors.lastname: Gibson
authors.affiliation: Arizona State University, Department of Physics, Tempe AZ 85287, USA.
authors.forename: M M J
authors.initials: MMJ
authors.lastname: Treacy
keywords: Amorphous; Fluctuations; Medium_range_order; Nanodiffraction; STEM; Silicon