title: Strong evidence for d-electron spin transport at room temperature at a LaAlO3/SrTiO3interface.
abstract: A d-orbital electron has an anisotropic electron orbital and is a source of magnetism. The realization of a two-dimensional electron gas (2DEG) embedded at a LaAlO3/SrTiO3interface surprised researchers in materials and physical sciences because the 2DEG consists of 3d-electrons of Ti with extraordinarily large carrier mobility, even in the insulating oxide heterostructure. To date, a wide variety of physical phenomena, such as ferromagnetism and the quantum Hall effect, have been discovered in this 2DEG system, demonstrating the ability of d-electron 2DEG systems to provide a material platform for the study of interesting physics. However, because of both ferromagnetism and the Rashba field, long-range spin transport and the exploitation of spintronics functions have been believed difficult to implement in d-electron 2DEG systems. Here, we report the experimental demonstration of room-temperature spin transport in a d-electron-based 2DEG at a LaAlO3/SrTiO3interface, where the spin relaxation length is about 300 nm. Our finding, which counters the conventional understandings of d-electron 2DEGs, highlights the spin-functionality of conductive oxide systems and opens the field of d-electron spintronics.
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan.|Graduate School of Engineering Science, Osaka University, 560-8531 Toyonaka, Japan.
authors.forename: Ryo
authors.initials: R
authors.lastname: Ohshima
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan.
authors.forename: Yuichiro
authors.initials: Y
authors.lastname: Ando
authors.affiliation: Secure Materials Center, Materials and Structures Laboratories, Tokyo Institute of Technology, 226-8503 Yokohama, Japan.
authors.forename: Kosuke
authors.initials: K
authors.lastname: Matsuzaki
authors.affiliation: Secure Materials Center, Materials and Structures Laboratories, Tokyo Institute of Technology, 226-8503 Yokohama, Japan.
authors.forename: Tomofumi
authors.initials: T
authors.lastname: Susaki
authors.affiliation: Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.|Physik-Department, Technische Universität München, 85748 Garching, Germany.
authors.forename: Mathias
authors.initials: M
authors.lastname: Weiler
authors.affiliation: Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.|Physik-Department, Technische Universität München, 85748 Garching, Germany.
authors.forename: Stefan
authors.initials: S
authors.lastname: Klingler
authors.affiliation: Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.|Physik-Department, Technische Universität München, 85748 Garching, Germany.|Nanosystems Initiative Munich, 80799 München, Germany.
authors.forename: Hans
authors.initials: H
authors.lastname: Huebl
authors.affiliation: Graduate School of Engineering, Osaka City University, 558-8585 Osaka, Japan.
authors.forename: Eiji
authors.initials: E
authors.lastname: Shikoh
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan.
authors.forename: Teruya
authors.initials: T
authors.lastname: Shinjo
authors.affiliation: Walther-Meißner-Institut, Bayerische Akademie der Wissenschaften, 85748 Garching, Germany.|Physik-Department, Technische Universität München, 85748 Garching, Germany.|Nanosystems Initiative Munich, 80799 München, Germany.
authors.forename: Sebastian T B
authors.initials: STB
authors.lastname: Goennenwein
authors.affiliation: Department of Electronic Science and Engineering, Kyoto University, 615-8510 Kyoto, Japan.
authors.forename: Masashi
authors.initials: M
authors.lastname: Shiraishi