title: A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.
abstract: The major issue of RRAM is the uneven sneak path that limits the array size. For the first time record large One-Resistor (1R) RRAM array of 128x128 is realized, and the array cells at the worst case still have good Low-/High-Resistive State (LRS/HRS) current difference of 378 nA/16 nA, even without using the selector device. This array has extremely low read current of 9.7 μA due to both low-current RRAM device and circuit interaction, where a novel and simple scheme of a reference point by half selected cell and a differential amplifier (DA) were implemented in the circuit design.
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.|School of Electronics Engineering, VIT University, Vellore, India.
authors.forename: Mohammed
authors.initials: M
authors.lastname: Zackriya
authors.affiliation: School of Electronics Engineering, VIT University, Vellore, India.
authors.forename: Harish M
authors.initials: HM
authors.lastname: Kittur
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.
authors.forename: Albert
authors.initials: A
authors.lastname: Chin