title: TiO2based nanostructured memristor for RRAM and neuromorphic applications: a simulation approach.
abstract: We report simulation of nanostructured memristor device using piecewise linear and nonlinear window functions for RRAM and neuromorphic applications. The linear drift model of memristor has been exploited for the simulation purpose with the linear and non-linear window function as the mathematical and scripting basis. The results evidences that the piecewise linear window function can aptly simulate the memristor characteristics pertaining to RRAM application. However, the nonlinear window function could exhibit the nonlinear phenomenon in simulation only at the lower magnitude of control parameter. This has motivated us to propose a new nonlinear window function for emulating the simulation model of the memristor. Interestingly, the proposed window function is scalable up tof(x) = 1 and exhibits the nonlinear behavior at higher magnitude of control parameter. Moreover, the simulation results of proposed nonlinear window function are encouraging and reveals the smooth nonlinear change from LRS to HRS and vice versa and therefore useful for the neuromorphic applications.
authors.affiliation: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004 India.
authors.forename: T D
authors.initials: TD
authors.lastname: Dongale
authors.affiliation: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004 India.
authors.forename: P J
authors.initials: PJ
authors.lastname: Patil
authors.affiliation: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004 India.
authors.forename: N K
authors.initials: NK
authors.lastname: Desai
authors.affiliation: Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, 416004 India.
authors.forename: P P
authors.initials: PP
authors.lastname: Chougule
authors.affiliation: Rajarambapu Institute of Technology, Sakharale, 415414 India.
authors.forename: S M
authors.initials: SM
authors.lastname: Kumbhar
authors.affiliation: Department of Physics, Shivaji University, Kolhapur, 416004 India.
authors.forename: P P
authors.initials: PP
authors.lastname: Waifalkar
authors.affiliation: Department of Physics, Shivaji University, Kolhapur, 416004 India.
authors.forename: P B
authors.initials: PB
authors.lastname: Patil
authors.affiliation: Department of Physics, Shivaji University, Kolhapur, 416004 India.
authors.forename: R S
authors.initials: RS
authors.lastname: Vhatkar
authors.affiliation: Department of Physics, Shivaji University, Kolhapur, 416004 India.
authors.forename: M V
authors.initials: MV
authors.lastname: Takale
authors.affiliation: Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004 India.
authors.forename: P K
authors.initials: PK
authors.lastname: Gaikwad
authors.affiliation: Embedded System and VLSI Research Laboratory, Department of Electronics, Shivaji University, Kolhapur, 416004 India.
authors.forename: R K
authors.initials: RK
authors.lastname: Kamat
keywords: Memristor; Neuromorphic applications; RRAM; Window function