title: Durability-enhanced two-dimensional hole gas of C-H diamond surface for complementary power inverter applications.
abstract: Complementary power field effect transistors (FETs) based on wide bandgap materials not only provide high-voltage switching capability with the reduction of on-resistance and switching losses, but also enable a smart inverter system by the dramatic simplification of external circuits. However, p-channel power FETs with equivalent performance to those of n-channel FETs are not obtained in any wide bandgap material other than diamond. Here we show that a breakdown voltage of more than 1600 V has been obtained in a diamond metal-oxide-semiconductor (MOS) FET with a p-channel based on a two-dimensional hole gas (2DHG). Atomic layer deposited (ALD) Al2O3induces the 2DHG ubiquitously on a hydrogen-terminated (C-H) diamond surface and also acts as both gate insulator and passivation layer. The high voltage performance is equivalent to that of state-of-the-art SiC planar n-channel FETs and AlGaN/GaN FETs. The drain current density in the on-state is also comparable to that of these two FETs with similar device size and VB.
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.|The Kagami Memorial Laboratory for Materials Science and Technology, Waseda University, 2-8-26 Nishiwaseda, Shinjuku, Tokyo 169-0051, Japan.|Research Organization for Nano &Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Kawarada
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Tetsuya
authors.initials: T
authors.lastname: Yamada
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Dechen
authors.initials: D
authors.lastname: Xu
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Hidetoshi
authors.initials: H
authors.lastname: Tsuboi
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Yuya
authors.initials: Y
authors.lastname: Kitabayashi
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Daisuke
authors.initials: D
authors.lastname: Matsumura
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Masanobu
authors.initials: M
authors.lastname: Shibata
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Takuya
authors.initials: T
authors.lastname: Kudo
authors.affiliation: Faculty of Science and Engineering, Waseda University, 3-4-1, Ohkubo, Shinjuku-ku, Tokyo 169-8555, Japan.
authors.forename: Masafumi
authors.initials: M
authors.lastname: Inaba
authors.affiliation: Research Organization for Nano &Life Innovation, Waseda University, 513 Waseda-tsurumaki, Shinjuku, Tokyo 162-0041, Japan.
authors.forename: Atsushi
authors.initials: A
authors.lastname: Hiraiwa