title: Reduction of Dislocations in Single Crystal Diamond by Lateral Growth over a Macroscopic Hole.
abstract: A low-dislocation diamond is obtained by homoepitaxial chemical vapor deposition on a standard moderate-quality substrate hollowed out by a large square hole. Dislocations are found to propagate vertically and horizontally from the substrate and to terminate at the top surface or at the sides of the hole, thus leaving the central part with a strongly reduced dislocation density.
authors.affiliation: Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 99 avenue J.B. Clément, 93430, Villetaneuse, France.
authors.forename: Alexandre
authors.initials: A
authors.lastname: Tallaire
authors.affiliation: Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 99 avenue J.B. Clément, 93430, Villetaneuse, France.
authors.forename: Ovidiu
authors.initials: O
authors.lastname: Brinza
authors.affiliation: Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 99 avenue J.B. Clément, 93430, Villetaneuse, France.
authors.forename: Vianney
authors.initials: V
authors.lastname: Mille
authors.affiliation: Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 99 avenue J.B. Clément, 93430, Villetaneuse, France.
authors.forename: Ludovic
authors.initials: L
authors.lastname: William
authors.affiliation: Laboratoire des Sciences des Procédés et des Matériaux (LSPM), CNRS, Université Paris 13, Sorbonne Paris Cité, 99 avenue J.B. Clément, 93430, Villetaneuse, France.
authors.forename: Jocelyn
authors.initials: J
authors.lastname: Achard
keywords: chemical vapor deposition; crystal growth; diamond; dislocation