title: Refractory period of an excitable semiconductor laser with optical injection.
abstract: Injection-locked semiconductor lasers can be brought to a neuronlike excitable regime when parameters are set close to the unlocking transition. Here we study experimentally the response of this system to repeated optical perturbations and observe the existence of a refractory period during which perturbations are not able to elicit an excitable response. The results are analyzed via simulations of a set of dynamical equations which reproduced adequately the experimental results.
authors.affiliation: Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France.|The Dodd-Walls Centre for Photonic and Quantum Technologies, Department of Physics, The University of Auckland, Auckland 1142, New Zealand.
authors.forename: B
authors.initials: B
authors.lastname: Garbin
authors.affiliation: Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France.|Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, via Valleggio 11, I-22100 Como, Italy.
authors.forename: A
authors.initials: A
authors.lastname: Dolcemascolo
authors.affiliation: Dipartimento di Scienza e Alta Tecnologia, Università dell'Insubria, via Valleggio 11, I-22100 Como, Italy.|CNISM, Research Unit of Como, via Valleggio 11, I-22100 Como, Italy.
authors.forename: F
authors.initials: F
authors.lastname: Prati
authors.affiliation: Departament de Física, Universitat de les Illes Baleares, C/ Valldemossa km 7.5, 07122 Mallorca, Spain.
authors.forename: J
authors.initials: J
authors.lastname: Javaloyes
authors.affiliation: Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France.
authors.forename: G
authors.initials: G
authors.lastname: Tissoni
authors.affiliation: Université Côte d'Azur-CNRS, Institut Non Linéaire de Nice, France.
authors.forename: S
authors.initials: S
authors.lastname: Barland