title: Designing Strained Interface Heterostructures for Memristive Devices.
abstract: Ionic heterostructures are used as a strain-modulated memristive device based on the model system Gd0.1Ce0.9O2-δ/Er2O3to set and tune the property of "memristance." The modulation of interfacial strain and the interface count is used to engineer the Roff/Ronratio and the persistence of the system. A model describing the variation of mixed ionic-electronic mobilities and defect concentrations is presented.
authors.affiliation: Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.
authors.forename: Sebastian
authors.initials: S
authors.lastname: Schweiger
authors.affiliation: Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.
authors.forename: Reto
authors.initials: R
authors.lastname: Pfenninger
authors.affiliation: Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.|School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.|Laboratory for Electrochemical Interfaces, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: William J
authors.initials: WJ
authors.lastname: Bowman
authors.affiliation: Materials Theory, ETH Zürich, 8093, Zürich, Switzerland.|Department of Chemistry and Biochemistry, University of Bern, 3012, Bern, Switzerland.
authors.forename: Ulrich
authors.initials: U
authors.lastname: Aschauer
authors.affiliation: Electrochemical Materials, ETH Zürich, HPP P 21, Honggerbergring 64, 8093, Zürich, Switzerland.|Electrochemical Materials, Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA.
authors.forename: Jennifer L M
authors.initials: JL
authors.lastname: Rupp
keywords: interfaces; lattice strain; raman; resistive switching