title: Flexural-Phonon Scattering Induced by Electrostatic Gating in Graphene.
abstract: Graphene has an extremely high carrier mobility partly due to its planar mirror symmetry inhibiting scattering by the highly occupied acoustic flexural phonons. Electrostatic gating of a graphene device can break the planar mirror symmetry, yielding a coupling mechanism to the flexural phonons. We examine the effect of the gate-induced one-phonon scattering on the mobility for several gate geometries and dielectric environments using first-principles calculations based on density functional theory and the Boltzmann equation. We demonstrate that this scattering mechanism can be a mobility-limiting factor, and show how the carrier density and temperature scaling of the mobility depends on the electrostatic environment. Our findings may explain the high deformation potential for in-plane acoustic phonons extracted from experiments and, furthermore, suggest a direct relation between device symmetry and resulting mobility.
authors.affiliation: Department of Micro- and Nanotechnology (DTU Nanotech), Center for Nanostructured Graphene (CNG), Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Tue
authors.initials: T
authors.lastname: Gunst
authors.affiliation: Department of Micro- and Nanotechnology (DTU Nanotech), Center for Nanostructured Graphene (CNG), Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Kristen
authors.initials: K
authors.lastname: Kaasbjerg
authors.affiliation: Department of Micro- and Nanotechnology (DTU Nanotech), Center for Nanostructured Graphene (CNG), Technical University of Denmark, DK-2800 Kgs. Lyngby, Denmark.
authors.forename: Mads
authors.initials: M
authors.lastname: Brandbyge