title: Hydroxyl-Terminated CuInS2-Based Quantum Dots: Potential Cathode Interfacial Modifiers for Efficient Inverted Polymer Solar Cells.
abstract: The use of interfacial modifiers on cathode or anode layers can effectively reduce the recombination loss and thus have potential to enhance the device performance of polymer solar cells. In this work, we demonstrated that hydroxyl-terminated CuInS2-based quantum dots could be potential cathode interfacial modifiers on ZnO layer for inverted polymer solar cells. By casting of a thin film of CuInS2-based quantum dots onto ZnO layer, the controlled devices show obvious enhancements of open-circuit voltage, short-circuit current, and fill factor. With an optimized interfacial layer with ∼7 nm thickness, an improvement of power conversion efficiency up to 16% is obtained and the optimized power conversion efficiency of PTB7-based (PTB7: poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b']dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl) carbonyl] thieno[3,4-b] thiophenediyl]]) polymer solar cells approaches 8.51%. Detailed analysis shows that the performance enhancement can be explained to the improved light absorption, modified work function, reduced surface roughness, and the increased electron transfer of ZnO cathode interlayer.
authors.affiliation: Department of Chemistry, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Chen
authors.affiliation: Department of Chemistry, South University of Science and Technology of China , Shenzhen 518055, China.|School of Advanced Materials, Peking University Shenzhen Graduate School , Shenzhen 518055, China.
authors.forename: Pengjie
authors.initials: P
authors.lastname: Chao
authors.affiliation: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Materials Science & Engineering, Beijing Institute of Technology , 5 Zhongguancun South Street, Beijing 100081, China.
authors.forename: Dengbao
authors.initials: D
authors.lastname: Han
authors.affiliation: Department of Chemistry, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Huan
authors.initials: H
authors.lastname: Wang
authors.affiliation: School of Advanced Materials, Peking University Shenzhen Graduate School , Shenzhen 518055, China.
authors.forename: Jingsheng
authors.initials: J
authors.lastname: Miao
authors.affiliation: Beijing Key Laboratory of Nanophotonics and Ultrafine Optoelectronic Systems, School of Materials Science & Engineering, Beijing Institute of Technology , 5 Zhongguancun South Street, Beijing 100081, China.
authors.forename: Haizheng
authors.identifier: http://orcid.org/0000-0002-2662-7472
authors.initials: H
authors.lastname: Zhong
authors.affiliation: School of Advanced Materials, Peking University Shenzhen Graduate School , Shenzhen 518055, China.
authors.forename: Hong
authors.identifier: http://orcid.org/0000-0001-5877-359X
authors.initials: H
authors.lastname: Meng
authors.affiliation: Department of Chemistry, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Feng
authors.identifier: http://orcid.org/0000-0002-8596-1366
authors.initials: F
authors.lastname: He
keywords: CuInS2; ZnO; interfacial modifier; polymer solar cells; quantum dots