title: C-H Direct Arylated 6H-Indolo[2,3-b]quinoxaline Derivative as a Thickness-Dependent Hole-Injection Layer.
abstract: A novel perfluoro-1,4-phenylenyl 6H-indolo[2,3-b]quinoxaline derivative (TFBIQ) was designed and synthesized by using a C-H direct arylation method. The optoelectrical properties of the obtained TFBIQ were fully characterized by UV/Vis spectroscopy, photoluminescence spectroscopy, cyclic voltammetry, and a group of Alq3-based green organic light-emitting diodes (OLEDs). Device A, which used 0.5 nm-thick TFBIQ as the interfacial modification layer, exhibited the five best advantages of device performance including a minimum turn-on voltage as low as 3.1 V, a maximum luminescence intensity as high as 26564 cd m-2, a highest current density value of 348.9 mA cm-2at a voltage of 11 V, the smallest efficiency roll-off, as well as the greatest power efficiency of 1.46 lm W-1relative to all of the other tested devices with thicker TFBIQ and also 10 nm-thick MoO3as hole-injection layers (HILs). As a promising candidate for an organic HIL material, the as-prepared TFBIQ exhibited a strong thickness effect on the performance of corresponding OLEDs. Furthermore, the theoretical calculated vertical ionization potential of the fluorinated TFBIQ suggests better anti-oxidation stability than that of the non-fluorinated structure.
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.
authors.forename: Dai
authors.initials: D
authors.lastname: Dong
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Da
authors.initials: D
authors.lastname: Fang
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.
authors.forename: Hairong
authors.initials: H
authors.lastname: Li
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.
authors.forename: Caixia
authors.initials: C
authors.lastname: Zhu
authors.affiliation: College of Chemistry and Chemical Engineering, Xinyang Normal University, Xinyang, 464000, Henan, China.
authors.forename: Xianghua
authors.initials: X
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.
authors.forename: Jiewei
authors.initials: J
authors.lastname: Li
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Lingzhi
authors.initials: L
authors.lastname: Jin
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Linghai
authors.initials: L
authors.lastname: Xie
authors.affiliation: Nanjing Polytechnic Institute, Nanjing, 210048, P. R. China.
authors.forename: Lin
authors.initials: L
authors.lastname: Chen
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.|Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Jianfeng
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Hongmei
authors.initials: H
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, P. R. China.|Key Laboratory for Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts & Telecommunications, Nanjing, 210023, P. R. China.
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
keywords: arylation; heterocycles; hole injection; light-emitting diodes; luminescence