title: On-Demand Fabrication of Si/SiO2Nanowire Arrays by Nanosphere Lithography and Subsequent Thermal Oxidation.
abstract: We demonstrate the fabrication of the large-area arrays of vertically aligned Si/SiO2nanowires with full tunability of the geometry of the single nanowires by the metal-assisted chemical etching technique and the following thermal oxidation process. To fabricate the geometry controllable Si/SiO2nanowire (NW) arrays, two critical issues relating with the size control of polystyrene reduction and oxide thickness evolution are investigated. Through analyzing the morphology evolutions of polystyrene particles, we give a quantitative description on the diameter variations of polystyrene particles with the etching time of plasma etching. Based on this, pure Si NW arrays with controllable geometry are generated. Then the oxide dynamic of Si NW is analyzed by the extended Deal-Grove model. By control, the initial Si NWs and the thermal oxidation time, the well-aligned Si/SiO2composite NW arrays with controllable geometry are obtained.
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.|University of Science and Technology of China, Hefei, 230026, People's Republic of China.
authors.forename: Huaxiang
authors.initials: H
authors.lastname: Cao
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China. xinhuali@issp.ac.cn.
authors.forename: Xinhua
authors.initials: X
authors.lastname: Li
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.|University of Science and Technology of China, Hefei, 230026, People's Republic of China.
authors.forename: Bukang
authors.initials: B
authors.lastname: Zhou
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.|University of Science and Technology of China, Hefei, 230026, People's Republic of China.
authors.forename: Tao
authors.initials: T
authors.lastname: Chen
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.
authors.forename: Tongfei
authors.initials: T
authors.lastname: Shi
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.|University of Science and Technology of China, Hefei, 230026, People's Republic of China.
authors.forename: Jianqiang
authors.initials: J
authors.lastname: Zheng
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.
authors.forename: Guangqiang
authors.initials: G
authors.lastname: Liu
authors.affiliation: Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, People's Republic of China.
authors.forename: Yuqi
authors.initials: Y
authors.lastname: Wang
keywords: Metal-assisted chemical etching (MACE); Nanosphere lithography; Nanowire arrays; Thermal oxidation