title: From Graphite to Graphene Oxide and Graphene Oxide Quantum Dots.
abstract: Many methods have been reported for synthesizing graphene oxide (GO) and graphene oxide quantum dots (GOQDs) where a tedious operational procedure and long reaction time are generally required. Herein, a facile one-pot solvothermal method that allows selective synthesis of pure GO and pure GOQDs, respectively is demonstrated. What is more, the final product of either GO or differently sized GOQDs can be easily controlled by adjusting the reaction temperatures or reactant ratios, which is also feasible when enlarged to gram scale. The 2.5 nm GOQDs show excellent photoluminescence that can be utilized for bioimaging or distinctive detection of Eu3+and Tb3+from their respective mixtures with other rare earth and/or transition metal ions, at sub-ppm level.
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Botong
authors.initials: B
authors.lastname: Liu
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing University of Posts and Telecommunication, Nanjing, 210023, China.
authors.forename: Juan
authors.initials: J
authors.lastname: Xie
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Ma
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Xi
authors.initials: X
authors.lastname: Zhang
authors.affiliation: School of Chemistry and Chemical Engineering, Inner Mongolia University, 235 West Daxue Road, Hohhot, 010021, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Pan
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Jiawei
authors.initials: J
authors.lastname: Lv
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Huan
authors.initials: H
authors.lastname: Ge
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Na
authors.initials: N
authors.lastname: Ren
authors.affiliation: School of Chemistry and Chemical Engineering, Inner Mongolia University, 235 West Daxue Road, Hohhot, 010021, China.
authors.forename: Haiquan
authors.initials: H
authors.lastname: Su
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Xiaoji
authors.initials: X
authors.lastname: Xie
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Ling
authors.initials: L
authors.lastname: Huang
authors.affiliation: Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Huang
keywords: detection; graphene oxide; graphene oxide quantum dots; rare earth ions; solvothermal