title: Diode-pumped mode-locked Tm:LuAG laser at 2  μm based on GaSb-SESAM.
abstract: Mode-locking of a directly diode-pumped Tm:LuAG laser is demonstrated using GaSb-based semiconductor saturable absorber mirrors (SESAMs). Stable and self-starting mode-locked operation was realized, generating pulses as short as 13.6 ps at 2024 nm with a maximum output power of 98 mW. Two GaInAs-based SESAMs were used for comparison with the operation based upon the use of the GaSb SESAM; in this case, longer pulses with durations of 27 ps and 34 ps were obtained under the same experimental conditions. Our work sets a new record in pulse duration for mode-locked Tm:LuAG lasers and confirms that lattice-matched GaSb-based SESAMs are beneficial for mode-locked solid-state lasers in the 2 μm range.
authors.forename: C
authors.initials: C
authors.lastname: Luan
authors.forename: K
authors.initials: K
authors.lastname: Yang
authors.forename: J
authors.initials: J
authors.lastname: Zhao
authors.forename: S
authors.initials: S
authors.lastname: Zhao
authors.forename: T
authors.initials: T
authors.lastname: Li
authors.forename: H
authors.initials: H
authors.lastname: Zhang
authors.forename: J
authors.initials: J
authors.lastname: He
authors.forename: L
authors.initials: L
authors.lastname: Song
authors.forename: T
authors.initials: T
authors.lastname: Dekorsy
authors.forename: M
authors.initials: M
authors.lastname: Guina
authors.forename: L
authors.initials: L
authors.lastname: Zheng