title: InGaN-based photoanode with ZnO nanowires for water splitting.
abstract: The water splitting properties of InGaN photoanodes equipped with ZnO nanowires were examined in this study. Over the solar spectrum range, the absorbance exhibited a remarkable increase due to the enhanced light absorption caused by the ZnO nanowires. By varying the ZnO nanowires length, the photo-to-current density of photoanodes was increased from 0.017 to 0.205 mA/cm2at 1.23 V versus reversible hydrogen electrode. Consequently, the incident-photon-to-current efficiency was increased by a factor of 5.5 as the ZnO nanowires growth time increased from 2 to 4 h. The results of this research demonstrate the importance of light absorbance and the surface reaction sites of photoanodes on energy harvesting.
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100086 China.
authors.forename: Junjie
authors.initials: J
authors.lastname: Kang
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Vinhquang
authors.initials: V
authors.lastname: Dang
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100086 China.
authors.forename: Hongjian
authors.initials: H
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Sungjin
authors.initials: S
authors.lastname: Moon
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100086 China.
authors.forename: Panpan
authors.initials: P
authors.lastname: Li
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Yangdoo
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Chaehyun
authors.initials: C
authors.lastname: Kim
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Hakjong
authors.initials: H
authors.lastname: Choi
authors.affiliation: Research and Development Center for Solid State Lighting, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100086 China.
authors.forename: Zhiqiang
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Department of Materials Science and Engineering, Korea University, Seoul, 137-713 Republic of Korea.
authors.forename: Heon
authors.initials: H
authors.lastname: Lee
keywords: GaN; Nanowire; Photoanode; ZnO