title: Eliminating Overerase Behavior by Designing Energy Band in High-Speed Charge-Trap Memory Based on WSe2.
abstract: Atomic crystal charge trap memory, as a new concept of nonvolatile memory, possesses an atomic level flatness interface, which makes them promising candidates for replacing conventional FLASH memory in the future. Here, a 2D material WSe2and a 3D Al2O3/HfO2/Al2O3charge-trap stack are combined to form a charge-trap memory device with a separation of control gate and memory stack. In this device, the charges are erased/written by built-in electric field, which significantly enhances the write speed to 1 µs. More importantly, owing to the elaborate design of the energy band structure, the memory only captures electrons with a large electron memory window over 20 V and trap selectivity about 13, both of them are the state-of-the-art values ever reported in FLASH memory based on 2D materials. Therefore, it is demonstrated that high-performance charge trap memory based on WSe2without the fatal overerase issue in conventional FLASH memory can be realized to practical application.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Chunsen
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Yan
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai, 200083, China.
authors.forename: Jianlu
authors.initials: J
authors.lastname: Wang
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Shijin
authors.initials: S
authors.lastname: Ding
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang
keywords: WSe2
  ; charge-trap memory; high writing speed; overerase phenomenon