title: Controllable quantized conductance for multilevel data storage applications using conductive bridge random access memory.
abstract: In this paper, we investigate the quantized conduction behavior of conductive bridge random access memory (CBRAM) with varied materials and ramping rates. We report stable and reproducible quantized conductance states with integer multiples of fundamental conductance obtained by optimizing the voltage ramping rate and the Ti-diffusion barrier (DB) at the Cu/HfO2interface. Owing to controlled diffusion of Cu ions by the Ti-DB and the optimized ramping rate, through which it was possible to control the time delay of Cu ion reduction, more than seven levels of discrete conductance states were clearly observed. Analytical modeling was performed to determine the rate-limiting step in filament growth based on an electrochemical redox reaction. Our understanding of the fundamental mechanisms of quantized conductance behaviors provide a promising future for the multi-bit CBRAM device.
authors.affiliation: Department of Material Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongarm-ro, Nam-gu, Pohang, 790-784, Republic of Korea.
authors.forename: Fekadu Gochole
authors.initials: FG
authors.lastname: Aga
authors.forename: Jiyong
authors.initials: J
authors.lastname: Woo
authors.forename: Jeonghwan
authors.initials: J
authors.lastname: Song
authors.forename: Jaehyuk
authors.initials: J
authors.lastname: Park
authors.forename: Seokjae
authors.initials: S
authors.lastname: Lim
authors.forename: Changhyuck
authors.initials: C
authors.lastname: Sung
authors.forename: Hyunsang
authors.initials: H
authors.lastname: Hwang