title: Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.
abstract: Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.
authors.forename: Julian J
authors.initials: JJ
authors.lastname: McMorrow
authors.affiliation: U.S. Naval Research Laboratory , Washington, D.C. 20375, United States.
authors.forename: Cory D
authors.initials: CD
authors.lastname: Cress
authors.forename: William A
authors.initials: WA
authors.lastname: Gaviria Rojas
authors.forename: Michael L
authors.initials: ML
authors.lastname: Geier
authors.forename: Tobin J
authors.identifier: 0000-0001-8771-0141
authors.initials: TJ
authors.lastname: Marks
authors.forename: Mark C
authors.identifier: 0000-0003-4120-1426
authors.initials: MC
authors.lastname: Hersam
keywords: CMOS; SWCNT; hardening; inverter; radiation; total ionizing dose