title: Grayscale image recording on Ge2Sb2Te5thin films through laser-induced structural evolution.
abstract: Chalcogenide Ge2Sb2Te5thin films have been widely exploited as binary bit recording materials in optical and non-volatile electronic information storage, where the crystalline and amorphous states are marked as the information bits "0" and "1", respectively. In this work, we demonstrate the use of Ge2Sb2Te5thin films as multi-level grayscale image recording materials. High-resolution grayscale images are recorded on Ge2Sb2Te5thin films through taking advantage of laser-induced structural evolution characteristic. Experimental results indicate that the change of laser energy results in the structural evolution of Ge2Sb2Te5thin films. The structural evolution induces the difference of electronic polarizability and reflectivity, and high-resolution grayscale images are recorded on Ge2Sb2Te5thin films through direct laser writing method, accordingly.
authors.affiliation: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China.|University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.
authors.forename: Tao
authors.initials: T
authors.lastname: Wei
authors.affiliation: Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China.
authors.forename: Jingsong
authors.initials: J
authors.lastname: Wei
authors.affiliation: University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China.|Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China.
authors.forename: Kui
authors.initials: K
authors.lastname: Zhang
authors.affiliation: Laboratory for High Density Optical Storage, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China.
authors.forename: Hongxia
authors.initials: H
authors.lastname: Zhao
authors.affiliation: Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, PR China.
authors.forename: Long
authors.initials: L
authors.lastname: Zhang