title: Accurate extraction of WSe2 FETs parameters by using pulsed I-V method at various temperatures.
abstract: This work investigates the intrinsic characteristics of multilayer WSe2field effect transistors (FETs) by analysing PulsedI-V(PIV) and DC characteristics measured at various temperatures. In DC measurement, unwanted charge trapping due to the gate bias stress results inI-Vcurves different from the intrinsic characteristic. However, PIV reduces the effect of gate bias stress so that intrinsic characteristic of WSe2FETs is obtained. The parameters such as hysteresis, field effect mobility (μeff), subthreshold slope (SS), and threshold voltage (Vth) measured by PIV are significantly different from those obtained by DC measurement. In PIV results, the hysteresis is considerably reduced compared with DC measurement, because the charge trapping effect is significantly reduced. With increasing temperature, the field effect mobility (μeff) and subthreshold swing (SS) are deteriorated, and threshold voltage (Vth) decreases.
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul, 151-747 South Korea.
authors.forename: Sung Tae
authors.initials: ST
authors.lastname: Lee
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul, 151-747 South Korea.
authors.forename: In Tak
authors.initials: IT
authors.lastname: Cho
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul, 151-747 South Korea.
authors.forename: Won Mook
authors.initials: WM
authors.lastname: Kang
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul, 151-747 South Korea.
authors.forename: Byung Gook
authors.initials: BG
authors.lastname: Park
authors.affiliation: Department of Electrical and Computer Engineering, Seoul National University, Seoul, 151-747 South Korea.
authors.forename: Jong-Ho
authors.initials: JH
authors.lastname: Lee
keywords: DC method; Pulsed I-V method; Temperature; Two-dimensional materials; WSe2 FETs