title: A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit.
abstract: Silicon (Si) based complementary metal-oxide semiconductor (CMOS) technology has been the driving force of the information-technology revolution. However, scaling of CMOS technology as per Moore's law has reached a serious bottleneck. Among the emerging technologies memristive devices can be promising for both memory as well as computing applications. Hybrid CMOS/memristor circuits with CMOL (CMOS + "Molecular") architecture have been proposed to combine the extremely high density of the memristive devices with the robustness of CMOS technology, leading to terabit-scale memory and extremely efficient computing paradigm. In this work, we demonstrate a hybrid 3D CMOL circuit with 2 layers of memristive crossbars monolithically integrated on a pre-fabricated CMOS substrate. The integrated crossbars can be fully operated through the underlying CMOS circuitry. The memristive devices in both layers exhibit analog switching behavior with controlled tunability and stable multi-level operation. We perform dot-product operations with the 2D and 3D memristive crossbars to demonstrate the applicability of such 3D CMOL hybrid circuits as a multiply-add engine. To the best of our knowledge this is the first demonstration of a functional 3D CMOL hybrid circuit.
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: B
authors.initials: B
authors.lastname: Chakrabarti
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: M A
authors.initials: MA
authors.lastname: Lastras-Montaño
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: G
authors.initials: G
authors.lastname: Adam
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: M
authors.initials: M
authors.lastname: Prezioso
authors.affiliation: Materials Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: B
authors.initials: B
authors.lastname: Hoskins
authors.forename: M
authors.initials: M
authors.lastname: Payvand
authors.forename: A
authors.initials: A
authors.lastname: Madhavan
authors.forename: A
authors.lastname: Ghofrani
authors.forename: L
authors.initials: L
authors.lastname: Theogarajan
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.|School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
authors.forename: K-T
authors.initials: KT
authors.lastname: Cheng
authors.affiliation: Electrical and Computer Engineering Department, University of California, Santa Barbara, CA, 93106, USA.
authors.forename: D B
authors.initials: DB
authors.lastname: Strukov