title: Organic nano-floating-gate transistor memory with metal nanoparticles.
abstract: Organic non-volatile memory is advanced topics for various soft electronics applications as lightweight, low-cost, flexible, and printable solid-state data storage media. As a key building block, organic field-effect transistors (OFETs) with a nano-floating gate are widely used and promising structures to store digital information stably in a memory cell. Different types of nano-floating-gates and their various synthesis methods have been developed and applied to fabricate nanoparticle-based non-volatile memory devices. In this review, recent advances in the classes of nano-floating-gate OFET memory devices using metal nanoparticles as charge-trapping sites are briefly reviewed. Details of device fabrication, characterization, and operation mechanisms are reported based on recent research activities reported in the literature.
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620 Republic of Korea.
authors.forename: Luu
authors.initials: L
authors.lastname: Van Tho
authors.affiliation: Department of Graphic Arts Information Engineering, Pukyong National University, 365 Sinseon-ro, Nam-gu, Busan, 48547 Republic of Korea.
authors.forename: Kang-Jun
authors.initials: KJ
authors.lastname: Baeg
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro, 1-gil, Jung-gu, Seoul, 04620 Republic of Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
keywords: Metal nanoparticles; Nano-floating-gate; Organic field effect transistors; Organic non-volatile memory