title: Quantum Effects and Phase Tuning in Epitaxial Hexagonal and Monoclinic MoTe2Monolayers.
abstract: Monolayer (ML) transition-metal dichalcogenides exist in different phases, such as hexagonal (2H) and monoclinic (1T') structures. They show very different properties: semiconducting for 2H-MoTe2and semimetallic for 1T'-MoTe2. The formation energy difference between 2H- and 1T'-phase MoTe2is small, so there is a high chance of tuning the structures of MoTe2and thereby introducing applications of phase-change electronics. In this paper, we report the growth of both 2H- and 1T'-MoTe2MLs by molecular-beam epitaxy (MBE) and demonstrate its tenability by changing the conditions of MBE. We attribute the latter to an effect of Te adsorption. By scanning tunneling microscopy and spectroscopy, we reveal not only the atomic structures and intrinsic electronic properties of the two phases of MoTe2but also quantum confinement and quantum interference effects in the 2H- and 1T'-MoTe2domains, respectively, as effected by domain boundaries in the samples.
authors.affiliation: Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, China.
authors.forename: Jinglei
authors.initials: J
authors.lastname: Chen
authors.affiliation: Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiaotong University , 800 Dongchuan Road, Shanghai 200240, China.|Innovation Center of Advanced Microstructures , Nanjing 210023, China.
authors.forename: Guanyong
authors.initials: G
authors.lastname: Wang
authors.affiliation: College of Physics and Electronic Engineering, Henan Normal University , Xinxiang, Henan 453007, China.|School of Physics and Electronic Engineering, Zhengzhou Normal University , Zhengzhou, Henan 450044, China.
authors.forename: Yanan
authors.initials: Y
authors.lastname: Tang
authors.affiliation: Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, China.|Physics Department, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Tian
authors.affiliation: Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, China.
authors.forename: Jinpeng
authors.initials: J
authors.lastname: Xu
authors.affiliation: College of Physics and Electronic Engineering, Henan Normal University , Xinxiang, Henan 453007, China.|School of Physics and Electronic Engineering, Zhengzhou Normal University , Zhengzhou, Henan 450044, China.
authors.forename: Xianqi
authors.initials: X
authors.lastname: Dai
authors.affiliation: Physics Department, South University of Science and Technology of China , Shenzhen 518055, China.
authors.forename: Hu
authors.identifier: 0000-0002-2254-5840
authors.initials: H
authors.lastname: Xu
authors.affiliation: Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics and Astronomy, Shanghai Jiaotong University , 800 Dongchuan Road, Shanghai 200240, China.|Innovation Center of Advanced Microstructures , Nanjing 210023, China.
authors.forename: Jinfeng
authors.initials: J
authors.lastname: Jia
authors.affiliation: Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, China.
authors.forename: Wingkin
authors.initials: W
authors.lastname: Ho
authors.affiliation: Physics Department, The University of Hong Kong , Pokfulam Road, Hong Kong, China.
authors.forename: Maohai
authors.identifier: 0000-0002-5017-3810
authors.initials: M
authors.lastname: Xie
keywords: MBE; MoTe2 monolayer; STM/STS; phase transition; quantum effects