title: Structural evolutions and hereditary characteristics of icosahedral nano-clusters formed in Mg70Zn30alloys during rapid solidification processes.
abstract: To investigate the structural evolution and hereditary mechanism of icosahedral nano-clusters formed during rapid solidification, a molecular dynamics (MD) simulation study has been performed for a system consisting of 107atoms of liquid Mg70Zn30alloy. Adopting Honeycutt-Anderson (HA) bond-type index method and cluster type index method (CTIM-3) to analyse the microstructures in the system it is found that for all the nano-clusters including 2~8 icosahedral clusters in the system, there are 62 kinds of geometrical structures, and those can be classified, by the configurations of the central atoms of basic clusters they contained, into four types: chain-like, triangle-tailed, quadrilateral-tailed and pyramidal-tailed. The evolution of icosahedral nano-clusters can be conducted by perfect heredity and replacement heredity, and the perfect heredity emerges when temperature is slightly less than Tmthen increase rapidly and far exceeds the replacement heredity at Tg; while for the replacement heredity, there are three major modes: replaced by triangle (3-atoms), quadrangle (4-atoms) and pentagonal pyramid (6-atoms), rather than by single atom step by step during rapid solidification processes.
authors.affiliation: School of Physics and Microelectronics Science, Hunan University, Changsha, 410082, China.|College of Big Data and Information Engineering, Guizhou University, Huaxi District, Guiyang, 550025, China.
authors.forename: Yong-Chao
authors.initials: YC
authors.lastname: Liang
authors.affiliation: School of Physics and Microelectronics Science, Hunan University, Changsha, 410082, China.
authors.forename: Rang-Su
authors.initials: RS
authors.lastname: Liu
authors.affiliation: College of Big Data and Information Engineering, Guizhou University, Huaxi District, Guiyang, 550025, China.
authors.forename: Quan
authors.initials: Q
authors.lastname: Xie
authors.affiliation: School of Physics and Microelectronics Science, Hunan University, Changsha, 410082, China.
authors.forename: Ze-An
authors.initials: ZA
authors.lastname: Tian
authors.affiliation: School of Physics and Microelectronics Science, Hunan University, Changsha, 410082, China.
authors.forename: Yun-Fei
authors.initials: YF
authors.lastname: Mo
authors.affiliation: School of Physics and Microelectronics Science, Hunan University, Changsha, 410082, China.|Department of electronic and communication engineering, Changsha University, Changsha, 410003, China.
authors.forename: Hai-Tao
authors.initials: HT
authors.lastname: Zhang
authors.affiliation: College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
authors.forename: Hai-Rong
authors.initials: HR
authors.lastname: Liu
authors.affiliation: Department of Applied Physics, Changan University, Xi'an, 710064, China.
authors.forename: Zhao-Yang
authors.initials: ZY
authors.lastname: Hou
authors.affiliation: Department of Information Engineering, Gannan Medical University, Ganzhou, 341000, China.
authors.forename: Li-Li
authors.initials: LL
authors.lastname: Zhou
authors.affiliation: College of Materials Science and Engineering, Hunan University, Changsha, 410082, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Peng