title: Strained Germanium Quantum Well PMOSFETs on SOI with Mobility Enhancement by External Uniaxial Stress.
abstract: Well-behaved Ge quantum well (QW) p-channel metal-oxide-semiconductor field-effect transistors (pMOSFETs) were fabricated on silicon-on-insulator (SOI) substrate. By optimizing the growth conditions, ultrathin fully strained Ge film was directly epitaxially grown on SOI at about 450 °C using ultra-high vacuum chemical vapor deposition. In situ Si2H6passivation of Ge was utilized to form a high-quality SiO2/Si interfacial layer between the high-κ dielectric and channels. Strained Ge QW pMOSFETs achieve the significantly improved effective hole mobility μeffas compared with the relaxed Si and Ge control devices. At an inversion charge density of Qinvof 2 × 1012cm-2, Ge QW pMOSFETs on SOI exhibit a 104% μeffenhancement over relaxed Ge control transistors. It is also demonstrated that μeffof Ge pMOSFETs on SOI can be further boosted by applying an external uniaxial compressive strain.
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, China.
authors.forename: Jiebin
authors.initials: J
authors.lastname: Niu
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Hongjuan
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China. hangenquan@ieee.org.
authors.forename: Genquan
authors.initials: G
authors.lastname: Han
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Chunfu
authors.initials: C
authors.lastname: Zhang
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Qian
authors.initials: Q
authors.lastname: Feng
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Jincheng
authors.initials: J
authors.lastname: Zhang
authors.affiliation: State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xidian University, Xi'an, 710071, China.
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao
keywords: Germanium; MOSFET; Mobility; Quantum well