title: Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes.
abstract: The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm2. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m-2that can already satisfy the requirements for lighting sources and displays.
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Zhikun
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Jinhong
authors.initials: J
authors.lastname: Du
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Dingdong
authors.initials: D
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Polymers Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, China.
authors.forename: Hengda
authors.initials: H
authors.lastname: Sun
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Lichang
authors.initials: L
authors.lastname: Yin
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Laipeng
authors.initials: L
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Polymers Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, China.
authors.forename: Jiangshan
authors.initials: J
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Polymers Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, 5625 Renmin Street, Changchun 130022, China.
authors.forename: Dongge
authors.initials: D
authors.lastname: Ma
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Hui-Ming
authors.initials: HM
authors.lastname: Cheng
authors.affiliation: Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, 72 Wenhua Road, Shenyang 110016, China.
authors.forename: Wencai
authors.initials: W
authors.lastname: Ren