title: The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applications.
abstract: We have conducted a series of measurements of resonantly excited photoluminescence, photocurrent and photovoltage on InGaN/GaN quantum wells with and without a p-n junction under reverse bias condition. The results indicate that most of the resonantly excited photo-generated carriers are extracted from the quantum wells when a p-n junction exists, and the photon absorption of quantum wells is enhanced by the p-n junction. Additionally, the carrier extraction becomes more distinct under a reverse bias. Our finding brings better understanding of the physical characteristics of quantum wells with p-n junction, which also suggests that the quantum well is suitable for photodiode detectors applications when a p-n junction is used.
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Haojun
authors.initials: H
authors.lastname: Yang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Ziguang
authors.initials: Z
authors.lastname: Ma
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Haiyan
authors.initials: H
authors.lastname: Wu
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zuo
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Zhao
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Haiqiang
authors.initials: H
authors.lastname: Jia
authors.affiliation: Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Chen