title: Recombination Pathways in Green InGaN/GaN Multiple Quantum Wells.
abstract: This paper reports the transient photoluminescence (PL) properties of an InGaN/GaN multiple quantum well (MQW) light-emitting diode (LED) with green emission. Recombination of localized excitons was proved to be the main microscopic mechanism of green emission in the sample. The PL dynamics were ascribed to two pathways of the exciton recombination, corresponding to the fast decay and the slow decay, respectively. The origins of slow decay and fast decay were assigned to local compositional fluctuations of indium and thickness variations of InGaN layers, respectively. Furthermore, the contributions of two decay pathways to the green PL were found to vary at different emission photon energy. The fraction of fast decay pathway decreased with decreasing photon energy. The slow radiative PL from deep localized exciton recombination suffered less suppression from non-radiative delocalization process, for the higher requested activation energy. All these results supported a clear microscopy mechanism of excitation-emission process of the green MQW LED structure.
authors.affiliation: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China.
authors.forename: Tao
authors.initials: T
authors.lastname: Lin
authors.affiliation: Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu City, 30010, Taiwan.
authors.forename: Hao Chung
authors.initials: HC
authors.lastname: Kuo
authors.affiliation: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China.
authors.forename: Xiao Dong
authors.initials: XD
authors.lastname: Jiang
authors.affiliation: Laboratory of Optoelectronic Materials & Detection Technology, Guangxi Key Laboratory for Relativistic Astrophysics, School of Physical Science & Technology, Guangxi University, Nanning, 530004, China. fengzc@gxu.edu.cn.
authors.forename: Zhe Chuan
authors.identifier: http://orcid.org/0000-0002-8982-8757
authors.initials: ZC
authors.lastname: Feng
keywords: Exciton localization; Light-emitting diodes; Photoluminescence