title: High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition.
abstract: Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the surface atomic terraces and decreases the X-ray diffraction (0002) full width at half maximum (FWHM) to a minimum of 55 arcsec, indicating a great improvement of the tilting feature of the grain structures in the AlN epilayer. More importantly, there is no inversion domains (IDs) found in the AlN epilayers, which clarifies that optimal sapphire nitridation is promising in the growth of high quality AlN. It is deduced that the different interfacial atomic structures caused by various pretreatment conditions influence the orientation of the AlN nucleation layer grains, which eventually determines the tilting features of the AlN epilayers.
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Global Energy Interconnection Research Institute, Beijing 102211, China.
authors.forename: Jiaming
authors.initials: J
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Fujun
authors.initials: F
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Chenguang
authors.initials: C
authors.lastname: He
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Lisheng
authors.initials: L
authors.lastname: Zhang
authors.affiliation: Anhui Key Laboratory of Detection Technology and Energy Saving Devices, Anhui Polytechnic University, Wuhu 241000, China.
authors.forename: Lin
authors.initials: L
authors.lastname: Lu
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Collaboration Innovation Center of Quantum Matter, Beijing 100084, China.
authors.forename: Xinqiang
authors.initials: X
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.
authors.forename: Zhixin
authors.initials: Z
authors.lastname: Qin
authors.affiliation: State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China.|Collaboration Innovation Center of Quantum Matter, Beijing 100084, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Shen