title: 3-D phononic crystals with ultra-wide band gaps.
abstract: In this paper gradient based topology optimization (TO) is used to discover 3-D phononic structures that exhibit ultra-wide normalized all-angle all-mode band gaps. The challenging computational task of repeated 3-D phononic band-structure evaluations is accomplished by a combination of a fast mixed variational eigenvalue solver and distributed Graphic Processing Unit (GPU) parallel computations. The TO algorithm utilizes the material distribution-based approach and a gradient-based optimizer. The design sensitivity for the mixed variational eigenvalue problem is derived using the adjoint method and is implemented through highly efficient vectorization techniques. We present optimized results for two-material simple cubic (SC), body centered cubic (BCC), and face centered cubic (FCC) crystal structures and show that in each of these cases different initial designs converge to single inclusion network topologies within their corresponding primitive cells. The optimized results show that large phononic stop bands for bulk wave propagation can be achieved at lower than close packed spherical configurations leading to lighter unit cells. For tungsten carbide - epoxy crystals we identify all angle all mode normalized stop bands exceeding 100%, which is larger than what is possible with only spherical inclusions.
authors.affiliation: Department of Mechanical, Materials, and Aerospace Engineering, Illinois Institute of Technology, Chicago, IL, 60616, USA.
authors.forename: Yan
authors.initials: Y
authors.lastname: Lu
authors.affiliation: Department of Civil Engineering, Johns Hopkins University, Baltimore, MD, 21218, USA.
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
authors.affiliation: Department of Civil Engineering, Johns Hopkins University, Baltimore, MD, 21218, USA.
authors.forename: James K
authors.initials: JK
authors.lastname: Guest
authors.affiliation: Department of Mechanical, Materials, and Aerospace Engineering, Illinois Institute of Technology, Chicago, IL, 60616, USA.
authors.forename: Ankit
authors.initials: A
authors.lastname: Srivastava