title: Temperature spectra of conductance of Ge/Si p-i-n structures with Ge quantum dots.
abstract: This work presents results of investigation of Ge/Si p-i-n structures with Ge quantum dots in the i-region by the method of admittance spectroscopy. The structures contain multiple layers with Ge quantum dots separated by thin 5 nm layers of Si in the intrinsic region. Two peaks are observed on the temperature dependences of conductance of the investigated heterostructures. It is revealed that the second peak is broadened and corresponds to a system of closely lying energy levels.
authors.affiliation: Scientific Research Company "Carat", Stryjska St. 202, Lviv, 79031, Ukraine. i.izhnin@carat.electron.ua.
authors.forename: Ihor I
authors.initials: II
authors.lastname: Izhnin
authors.affiliation: Scientific Research Company "Carat", Stryjska St. 202, Lviv, 79031, Ukraine.
authors.forename: Olena I
authors.initials: OI
authors.lastname: Fitsych
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, Tomsk, Russia, 634050.
authors.forename: Anton A
authors.initials: AA
authors.lastname: Pishchagin
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, Tomsk, Russia, 634050.
authors.forename: Andrei P
authors.initials: AP
authors.lastname: Kokhanenko
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, Tomsk, Russia, 634050.
authors.forename: Alexander V
authors.initials: AV
authors.lastname: Voitsekhovskii
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, Tomsk, Russia, 634050.
authors.forename: Stanislav M
authors.initials: SM
authors.lastname: Dzyadukh
authors.affiliation: National Research Tomsk State University, Lenina Av. 36, Tomsk, Russia, 634050.|A.V. Rzhanov Institute of Semiconductor Physics SB RAS, Akademika Lavrent`eva Av. 13, Novosibirsk, Russia, 630090.
authors.forename: Alexander I
authors.initials: AI
authors.lastname: Nikiforov
keywords: Admittance spectroscopy; Energy levels of spatial quantization; GeSi; Molecular-beam epitaxy; Quantum dot