title: Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si.
abstract: High performance III-V lasers at datacom and telecom wavelengths on on-axis (001) Si are needed for scalable datacenter interconnect technologies. We demonstrate electrically injected quantum dot lasers grown on on-axis (001) Si patterned with {111} v-grooves lying in the [110] direction. No additional Ge buffers or substrate miscut was used. The active region consists of five InAs/InGaAs dot-in-a-well layers. We achieve continuous wave lasing with thresholds as low as 36 mA and operation up to 80°C.
authors.forename: Justin
authors.initials: J
authors.lastname: Norman
authors.forename: M J
authors.initials: MJ
authors.lastname: Kennedy
authors.forename: Jennifer
authors.initials: J
authors.lastname: Selvidge
authors.forename: Qiang
authors.initials: Q
authors.lastname: Li
authors.forename: Yating
authors.initials: Y
authors.lastname: Wan
authors.forename: Alan Y
authors.initials: AY
authors.lastname: Liu
authors.forename: Patrick G
authors.initials: PG
authors.lastname: Callahan
authors.forename: McLean P
authors.initials: MP
authors.lastname: Echlin
authors.forename: Tresa M
authors.initials: TM
authors.lastname: Pollock
authors.forename: Kei May
authors.initials: KM
authors.lastname: Lau
authors.forename: Arthur C
authors.initials: AC
authors.lastname: Gossard
authors.forename: John E
authors.initials: JE
authors.lastname: Bowers