title: InGaAsP/InP Nanocavity for Single-Photon Source at 1.55-μm Telecommunication Band.
abstract: A new structure of 1.55-μm pillar cavity is proposed. Consisting of InP-air-aperture and InGaAsP layers, this cavity can be fabricated by using a monolithic process, which was difficult for previous 1.55-μm pillar cavities. Owing to the air apertures and tapered distributed Bragg reflectors, such a pillar cavity with nanometer-scaled diameters can give a quality factor of 104-105at 1.55 μm. Capable of weakly and strongly coupling a single quantum dot with an optical mode, this nanocavity could be a prospective candidate for quantum-dot single-photon sources at 1.55-μm telecommunication band.
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China. hzsong@uestc.end.cn.|School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China. hzsong@uestc.end.cn.|Department of Fundamental Laser-Optoelectronic Technology, Southwest Institute of Technical Physics, Section 4-7, Renminnan Road, Chengdu, 610041, Sichuan, China. hzsong@uestc.end.cn.
authors.forename: Hai-Zhi
authors.identifier: http://orcid.org/0000-0002-5527-0775
authors.initials: HZ
authors.lastname: Song
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Mukhtar
authors.initials: M
authors.lastname: Hadi
authors.affiliation: School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Yanzhen
authors.initials: Y
authors.lastname: Zheng
authors.affiliation: Department of Fundamental Laser-Optoelectronic Technology, Southwest Institute of Technical Physics, Section 4-7, Renminnan Road, Chengdu, 610041, Sichuan, China.
authors.forename: Bizhou
authors.initials: B
authors.lastname: Shen
authors.affiliation: School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Zhang
authors.affiliation: School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Zhilei
authors.initials: Z
authors.lastname: Ren
authors.affiliation: School of Optoelectronic Information, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Ruoyao
authors.initials: R
authors.lastname: Gao
authors.affiliation: Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Section 2-4, Jianshebei Road, Chengdu, 610054, Sichuan, China.
authors.forename: Zhiming M
authors.initials: ZM
authors.lastname: Wang
keywords: Distributed Bragg reflector; Nanocavity; Quantum dot; Single-photon source