title: Ultrabroadband MoS2Photodetector with Spectral Response from 445 to 2717 nm.
abstract: Photodetectors with excellent detecting properties over a broad spectral range have advantages for the application in many optoelectronic devices. Introducing imperfections to the atomic lattices in semiconductors is a significant way for tuning the bandgap and achieving broadband response, but the imperfection may renovate their intrinsic properties far from the desire. Here, by controlling the deviation from the perfection of the atomic lattice, ultrabroadband multilayer MoS2photodetectors are originally designed and realized with the detection range over 2000 nm from 445 nm (blue) to 2717 nm (mid-infrared). Associated with the narrow but nonzero bandgap and large photoresponsivity, the optimized deviation from the perfection of MoS2samples is theoretically found and experimentally achieved aiming at the ultrabroadband photoresponse. By the photodetection characterization, the responsivity and detectivity of the present photodetectors are investigated in the wavelength range from 445 to 2717 nm with the maximum values of 50.7 mA W-1and 1.55 × 109Jones, respectively, which represent the most broadband MoS2photodetectors. Based on the easy manipulation, low cost, large scale, and broadband photoresponse, this present detector has significant potential for the applications in optoelectronics and electronics in the future.
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Bo
authors.initials: B
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Shuxian
authors.initials: S
authors.lastname: Wang
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Wang
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China.
authors.forename: Aizhu
authors.initials: A
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Zeyan
authors.initials: Z
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Haohai
authors.initials: H
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Huaijin
authors.initials: H
authors.lastname: Zhang
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China.
authors.forename: Yanxue
authors.initials: Y
authors.lastname: Chen
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China.
authors.forename: Mingwen
authors.initials: M
authors.lastname: Zhao
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Baibiao
authors.initials: B
authors.lastname: Huang
authors.affiliation: School of Physics, Shandong University, Jinan, 250100, China.
authors.forename: Liangmo
authors.initials: L
authors.lastname: Mei
authors.affiliation: State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jinan, 250100, China.
authors.forename: Jiyang
authors.initials: J
authors.lastname: Wang
keywords: MoS2 sheets; band structure; control component deviation; optical absorption; ultrabroadband photodetectors