title: C3N-A 2D Crystalline, Hole-Free, Tunable-Narrow-Bandgap Semiconductor with Ferromagnetic Properties.
abstract: Graphene has initiated intensive research efforts on 2D crystalline materials due to its extraordinary set of properties and the resulting host of possible applications. Here the authors report on the controllable large-scale synthesis of C3N, a 2D crystalline, hole-free extension of graphene, its structural characterization, and some of its unique properties. C3N is fabricated by polymerization of 2,3-diaminophenazine. It consists of a 2D honeycomb lattice with a homogeneous distribution of nitrogen atoms, where both N and C atoms show a D6h-symmetry. C3N is a semiconductor with an indirect bandgap of 0.39 eV that can be tuned to cover the entire visible range by fabrication of quantum dots with different diameters. Back-gated field-effect transistors made of single-layer C3N display an on-off current ratio reaching 5.5 × 1010. Surprisingly, C3N exhibits a ferromagnetic order at low temperatures (<96 K) when doped with hydrogen. This new member of the graphene family opens the door for both fundamental basic research and possible future applications.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Siwei
authors.initials: S
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.|Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 200433, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Li
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Caichao
authors.initials: C
authors.lastname: Ye
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Center of Electron Microscopy and State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: He
authors.initials: H
authors.lastname: Tian
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Chong
authors.initials: C
authors.lastname: Zhu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Peng
authors.initials: P
authors.lastname: He
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.
authors.forename: Guqiao
authors.initials: G
authors.lastname: Ding
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.|School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China.|Department of Materials Science and Engineering, Technion, Israel Institute of Technology, Haifa, 3200003, Israel.
authors.forename: Yeshayahu
authors.initials: Y
authors.lastname: Lifshitz
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Shuit-Tong
authors.initials: ST
authors.lastname: Lee
authors.affiliation: Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, 215123, P. R. China.
authors.forename: Zhenhui
authors.initials: Z
authors.lastname: Kang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai, 200050, P. R. China.|School of Physical Science and Technology, Shanghai Tech University, Shanghai, 200031, P. R. China.
authors.forename: Mianheng
authors.initials: M
authors.lastname: Jiang
keywords: 2D materials; carbon; ferromagnetic properties; semiconductors