title: In-Plane 2H-1T' MoTe2Homojunctions Synthesized by Flux-Controlled Phase Engineering.
abstract: The fabrication of in-plane 2H-1T' MoTe2homojunctions by the flux-controlled, phase-engineering of few-layer MoTe2from Mo nanoislands is reported. The phase of few-layer MoTe2is controlled by simply changing Te atomic flux controlled by the temperature of the reaction vessel. Few-layer 2H MoTe2is formed with high Te flux, while few-layer 1T' MoTe2is obtained with low Te flux. With medium flux, few-layer in-plane 2H-1T' MoTe2homojunctions are synthesized. As-synthesized MoTe2is characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. Kelvin probe force microscopy and Raman mapping confirm that in-plane 2H-1T' MoTe2homojunctions have abrupt interfaces between 2H and 1T' MoTe2domains, possessing a potential difference of about 100 mV. It is further shown that this method can be extended to create patterned metal-semiconductor junctions in MoTe2in a two-step lithographic synthesis. The flux-controlled phase engineering method could be utilized for the large-scale controlled fabrication of 2D metal-semiconductor junctions for next-generation electronic and optoelectronic devices.
authors.affiliation: Department of Chemistry, University of Minnesota, Minneapolis, MN, 55455, USA.
authors.forename: Youngdong
authors.initials: Y
authors.lastname: Yoo
authors.affiliation: Department of Chemistry, University of Minnesota, Minneapolis, MN, 55455, USA.
authors.forename: Zachary P
authors.initials: ZP
authors.lastname: DeGregorio
authors.affiliation: Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
authors.forename: Yang
authors.initials: Y
authors.lastname: Su
authors.affiliation: Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, 55455, USA.
authors.forename: Steven J
authors.initials: SJ
authors.lastname: Koester
authors.affiliation: Department of Chemistry, University of Minnesota, Minneapolis, MN, 55455, USA.
authors.forename: James E
authors.initials: JE
authors.lastname: Johns
keywords: 2D materials; MoTe2; TMDCs; junctions; metal-semiconductor