title: Self-Rectifying Resistive Switching Memory with Ultralow Switching Current in Pt/Ta2O5/HfO2-x/Hf Stack.
abstract: In this study, we present a bilayer resistive switching memory device with Pt/Ta2O5/HfO2-x/Hf structure, which shows sub-1 μA ultralow operating current, median switching voltage, adequate ON/OFF ratio, and simultaneously containing excellent self-rectifying characteristics. The control sample with single HfO2-xstructure shows bidirectional memory switching properties with symmetrical I-V curve in low resistance state. After introducing a 28-nm-thick Ta2O5layer on HfO2-xlayer, self-rectifying phenomena appeared, with a maximum self-rectifying ratio (RR) of ~4 × 103observed at ±0.5 V. Apart from being a series resistance for the cell, the Ta2O5rectifying layer also served as an oxygen reservoir which remains intact during the whole switching cycle.
authors.affiliation: Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China.
authors.forename: Haili
authors.initials: H
authors.lastname: Ma
authors.affiliation: Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China. jfeng@sjtu.edu.cn.
authors.forename: Jie
authors.initials: J
authors.lastname: Feng
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Hangbing
authors.initials: H
authors.lastname: Lv
authors.affiliation: Department of Micro/Nano Electronics, Key Laboratory for Thin Film and Micro Fabrication of Ministry of Education, Shanghai Jiao Tong University, Shanghai, China.
authors.forename: Tian
authors.initials: T
authors.lastname: Gao
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Xiaoxin
authors.initials: X
authors.lastname: Xu
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Qing
authors.initials: Q
authors.lastname: Luo
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Tiancheng
authors.initials: T
authors.lastname: Gong
authors.affiliation: Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Yuan
keywords: Crossbar; Leakage current issue; RRAM; Self-rectifying