title: Chemical Modification of Semiconductor Surfaces for Molecular Electronics.
abstract: Inserting molecular monolayers within metal/semiconductor interfaces provides one of the most powerful expressions of how minute chemical modifications can affect electronic devices. This topic also has direct importance for technology as it can help improve the efficiency of a variety of electronic devices such as solar cells, LEDs, sensors, and possible future bioelectronic ones. The review covers the main aspects of using chemistry to control the various aspects of interface electrostatics, such as passivation of interface states and alignment of energy levels by intrinsic molecular polarization, as well as charge rearrangement with the adjacent metal and semiconducting contacts. One of the greatest merits of molecular monolayers is their capability to form excellent thin dielectrics, yielding rich and unique current-voltage characteristics for transport across metal/molecular monolayer/semiconductor interfaces. We explain the interplay between the monolayer as tunneling barrier on the one hand, and the electrostatic barrier within the semiconductor, due to its space-charge region, on the other hand, as well as how different monolayer chemistries control each of these barriers. Practical tools to experimentally identify these two barriers and distinguish between them are given, followed by a short look to the future. This review is accompanied by another one, concerning the formation of large-area molecular junctions and charge transport that is dominated solely by molecules.
authors.affiliation: Department of Materials & Interfaces, Weizmann Institute of Science , Rehovot, Israel 76100.
authors.forename: Ayelet
authors.identifier: http://orcid.org/0000-0001-5126-9315
authors.initials: A
authors.lastname: Vilan
authors.affiliation: Department of Materials & Interfaces, Weizmann Institute of Science , Rehovot, Israel 76100.
authors.forename: David
authors.identifier: http://orcid.org/0000-0001-8118-5446
authors.initials: D
authors.lastname: Cahen