title: Nano-cone resistive memory for ultralow power operation.
abstract: SiNx-based nano-structure resistive memory is fabricated by fully silicon CMOS compatible process integration including particularly designed anisotropic etching for the construction of a nano-cone silicon bottom electrode (BE). Bipolar resistive switching characteristics have significantly reduced switching current and voltage and are demonstrated in a nano-cone BE structure, as compared with those in a flat BE one. We have verified by systematic device simulations that the main cause of reduction in the performance parameters is the high electric field being more effectively concentrated at the tip of the cone-shaped BE. The greatly improved nonlinearity of the nano-cone resistive memory cell will be beneficial in the ultra-high-density crossbar array.
authors.affiliation: Inter-university Semiconductor Research Center (ISRC) and the Department of Electrical and Computer Engineering, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Sungjun
authors.initials: S
authors.lastname: Kim
authors.forename: Sunghun
authors.initials: S
authors.lastname: Jung
authors.forename: Min-Hwi
authors.initials: MH
authors.lastname: Kim
authors.forename: Tae-Hyeon
authors.initials: TH
authors.lastname: Kim
authors.forename: Suhyun
authors.initials: S
authors.lastname: Bang
authors.forename: Seongjae
authors.initials: S
authors.lastname: Cho
authors.forename: Byung-Gook
authors.initials: BG
authors.lastname: Park