title: Integration of Highly Strained SiGe in Source and Drain with HK and MG for 22 nm Bulk PMOS Transistors.
abstract: In this study, the integration of SiGe selective epitaxy on source/drain regions and high-k and metal gate for 22 nm node bulk pMOS transistors has been presented. Selective Si1-xGexgrowth (0.35 ≤ × ≤ 0.40) with boron concentration of 1-3 × 1020cm-3was used to elevate the source/drain. The main focus was optimization of the growth parameters to improve the epitaxial quality where the high-resolution x-ray diffraction (HRXRD) and energy dispersive spectrometer (EDS) measurement data provided the key information about Ge profile in the transistor structure. The induced strain by SiGe layers was directly measured by x-ray on the array of transistors. In these measurements, the boron concentration was determined from the strain compensation of intrinsic and boron-doped SiGe layers. Finally, the characteristic of transistors were measured and discussed showing good device performance.
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China. wangguilei@ime.ac.cn.
authors.forename: Guilei
authors.initials: G
authors.lastname: Wang
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Luo
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Changliang
authors.initials: C
authors.lastname: Qin
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: Renrong
authors.initials: R
authors.lastname: Liang
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Yefeng
authors.initials: Y
authors.lastname: Xu
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Jinbiao
authors.initials: J
authors.lastname: Liu
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Junfeng
authors.initials: J
authors.lastname: Li
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Huaxiang
authors.initials: H
authors.lastname: Yin
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Jiang
authors.initials: J
authors.lastname: Yan
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.
authors.forename: Huilong
authors.initials: H
authors.lastname: Zhu
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing, 100084, People's Republic of China.
authors.forename: Jun
authors.initials: J
authors.lastname: Xu
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhao
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China. rad@ime.ac.cn.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China. rad@ime.ac.cn.|KTH Royal Institute of Technology, Brinelly. 8, 10044, Stockholm, Sweden. rad@ime.ac.cn.
authors.forename: Henry H
authors.initials: HH
authors.lastname: Radamson
authors.affiliation: Key laboratory of Microelectronic Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing, 100029, People's Republic of China.|University of Chinese Academy of Sciences, Beijing, 100049, People's Republic of China.
authors.forename: Tianchun
authors.initials: T
authors.lastname: Ye
keywords: 22-nm PMOS; High-k and metal gate; RPCVD; SiGe selective epitaxy