title: Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory.
abstract: For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2and NH3precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of ~1.5 × 1012cm-2and a small size of 3~4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China.
authors.forename: Shi-Bing
authors.initials: SB
authors.lastname: Qian
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China.
authors.forename: Yong-Ping
authors.initials: YP
authors.lastname: Wang
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China.
authors.forename: Yan
authors.initials: Y
authors.lastname: Shao
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China.
authors.forename: Wen-Jun
authors.initials: WJ
authors.lastname: Liu
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, 200433, Shanghai, China. sjding@fudan.edu.cn.
authors.forename: Shi-Jin
authors.initials: SJ
authors.lastname: Ding
keywords: In-Ga-Zn-O; Memory; Ni nanoparticles; Plasma-assisted atomic layer deposition