title: Transfer free graphene growth on SiO2substrate at 250 °C.
abstract: Low-temperature growth, as well as the transfer free growth on substrates, is the major concern of graphene research for its practical applications. Here we propose a simple method to achieve the transfer free graphene growth on SiO2covered Si (SiO2/Si) substrate at 250 °C based on a solid-liquid-solid reaction. The key to this approach is the catalyst metal, which is not popular for graphene growth by chemical vapor deposition. A catalyst metal film of 500 nm thick was deposited onto an amorphous C (50 nm thick) coated SiO2/Si substrate. The sample was then annealed at 250 °C under vacuum condition. Raman spectra measured after the removal of the catalyst by chemical etching showed intense G and 2D peaks together with a small D and intense SiO2related peaks, confirming the transfer free growth of multilayer graphene on SiO2/Si. The domain size of the graphene confirmed by optical microscope and atomic force microscope was about 5 μm in an average. Thus, this approach will open up a new route for transfer free graphene growth at low temperatures.
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Riteshkumar
authors.initials: R
authors.lastname: Vishwakarma
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.|Universiti Pendidikan Sultan Idris, Department of Chemistry, Faculty of Science and Mathematics, 35900 Tanjong Malim, Perak, Malaysia.
authors.forename: Mohamad Saufi
authors.initials: MS
authors.lastname: Rosmi
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Kazunari
authors.initials: K
authors.lastname: Takahashi
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Yuji
authors.initials: Y
authors.lastname: Wakamatsu
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.|Universiti Putra Malaysia, Department of Physics, Faculty of Science, 43400 UPM Serdang, Selangor, Malaysia.
authors.forename: Yazid
authors.initials: Y
authors.lastname: Yaakob
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Mona Ibrahim
authors.initials: MI
authors.lastname: Araby
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Golap
authors.initials: G
authors.lastname: Kalita
authors.affiliation: Olympus Co. Ltd., 6666 Inatomi, Tatsuno, Kami-Ina-Gun, Nagano 399-0495, Japan.
authors.forename: Masashi
authors.initials: M
authors.lastname: Kitazawa
authors.affiliation: Nagoya Institute of Technology, Department of Frontier Materials, Graduate School of Engineering, Gokiso-cho, Showa-ku, Nagoya 466-8555, Japan.
authors.forename: Masaki
authors.initials: M
authors.lastname: Tanemura