title: Comparative Study of Antimony Doping Effects on the Performance of Solution-Processed ZIO and ZTO Field-Effect Transistors.
abstract: ZnO-based oxide films are emerging as high-performance semiconductors for field-effect transistors (FETs) in optoelectronics. Carrier mobility and stability in these FETs are improved by introducing indium (In) and gallium (Ga) cations, respectively. However, the strong trade-off between the mobility and stability, which come from In or Ga incorporation, still limits the widespread use of metal oxide FETs in ultrahigh pixel density and device area-independent flat panel applications. We demonstrated that the incorporation of antimony (Sb) cations in amorphous zinc indium oxide (ZIO) simultaneously enhanced the field-effect mobility (μFET) and electrical stability of the resulting Sb-doped ZIO FETs. The rationale for the unexpected synergic effect was related to the unique electron configuration of Sb5+([Kr]4d105s05p0). However, the benefit of Sb doping was not observed in the zinc tin oxide (ZTO) system. All the Sb-doped ZTO FETs suffered from a reduction in μFETand a deterioration of gate bias stress stability with an increase in Sb loading. This can be attributed to the formation of heterogeneous defects due to Sb-induced phase separation and the creation of Sb3+induced acceptor-like trap states.
authors.forename: Jong Han
authors.identifier: http://orcid.org/0000-0001-7794-215X
authors.initials: JH
authors.lastname: Baek
authors.affiliation: Department of Electronic Engineering, Hanyang University , Seoul 133-791, South Korea.
authors.forename: Hyunju
authors.identifier: http://orcid.org/0000-0003-2975-7560
authors.initials: H
authors.lastname: Seol
authors.affiliation: Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 790-784, South Korea.
authors.forename: Kilwon
authors.identifier: http://orcid.org/0000-0003-0321-3629
authors.initials: K
authors.lastname: Cho
authors.forename: Hoichang
authors.identifier: http://orcid.org/0000-0003-0585-8527
authors.initials: H
authors.lastname: Yang
authors.affiliation: Department of Electronic Engineering, Hanyang University , Seoul 133-791, South Korea.
authors.forename: Jae Kyeong
authors.initials: JK
authors.lastname: Jeong
keywords: antimony doping; bias stability; field-effect transistor; solution process; zinc indium oxide; zinc tin oxide