title: Epitaxial Growth of Ternary Topological Insulator Bi2Te2Se 2D Crystals on Mica.
abstract: Nanostructures of ternary topological insulator (TI) Bi2Te2Se are, in principle, advantageous to the manifestation of topologically nontrivial surface states, due to significantly enhanced surface-to-volume ratio compared with its bulk crystals counterparts. Herein, the synthesis of 2D Bi2Te2Se crystals on mica via the van der Waals epitaxy method is explored and systematically the growth behaviors during the synthesis process are investigated. Accordingly, 2D Bi2Te2Se crystals with domain size up to 50 µm large and thickness down to 2 nm are obtained. A pronounced weak antilocalization effect is clearly observed in the 2D Bi2Te2Se crystals at 2 K. The method for epitaxial growth of 2D ternary Bi2Te2Se crystals may inspire materials engineering toward enhanced manifestation of the subtle surface states of TIs and thereby facilitate their potential applications in next-generation spintronics.
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Yujing
authors.initials: Y
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Min
authors.initials: M
authors.lastname: Tang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Mengmeng
authors.initials: M
authors.lastname: Meng
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Mingzhan
authors.initials: M
authors.lastname: Wang
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Jinxiong
authors.initials: J
authors.lastname: Wu
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Jianbo
authors.initials: J
authors.lastname: Yin
authors.affiliation: Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
authors.forename: Yubing
authors.initials: Y
authors.lastname: Zhou
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Yunfan
authors.initials: Y
authors.lastname: Guo
authors.affiliation: Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, P. R. China.
authors.forename: Congwei
authors.initials: C
authors.lastname: Tan
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Wenhui
authors.initials: W
authors.lastname: Dang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: Shaoyun
authors.initials: S
authors.lastname: Huang
authors.affiliation: Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing, 100871, P. R. China.
authors.forename: H Q
authors.initials: HQ
authors.lastname: Xu
authors.affiliation: State Key Laboratory of Silicon Materials and Center of Electron Microscopy, School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Yong
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China.
authors.forename: Hailin
authors.initials: H
authors.lastname: Peng
keywords: 2D crystals; bismuth telluroselenide; epitaxial growth; ternary topological insulators