title: Photochemical Activation of Electrospun In2O3Nanofibers for High-Performance Electronic Devices.
abstract: Electrospun metal oxide nanofibers have been regarded as promising blocks for large-area, low-cost, and one-dimensional electronic devices. However, the electronic devices based on electrospun nanofibers usually suffer from poor performance and inferior viability. Here, we report an efficient photochemical process using UV light generated by a high-pressure mercury lamp to promote the electrical performance of the nanofiber-based electronic devices. Such UV treatment can lead to strong photochemical activation of electrospun nanofibers, and therefore, a stable adherent nanofiber network and electronic-clean interface were formed. By use of UV treatment, high-performance indium oxide (In2O3) nanofiber based field-effect transistors (FETs) with highly efficient modulation of electrical characteristics have been successfully fabricated. To reduce the operating voltage and further improve the device performance, the In2O3nanofiber FETs based on solution-processed high-k AlOxdielectrics were integrated and investigated. The as-fabricated In2O3/AlOxFETs exhibit superior electrical performance, including a high mobility of 19.8 cm2V-1s-1, a large on/off current ratio of 106, and high stability over time and cycling. The improved performance of the UV-treated FETs was further confirmed by the integration of the electrospun In2O3/AlOxFETs into inverters. This work presents an important advance toward the practical applications of electrospun nanofibers for functional electronic devices.
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: You
authors.initials: Y
authors.lastname: Meng
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: Guoxia
authors.initials: G
authors.lastname: Liu
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: Ao
authors.initials: A
authors.lastname: Liu
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: Zidong
authors.initials: Z
authors.lastname: Guo
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: Wenjia
authors.initials: W
authors.lastname: Sun
authors.affiliation: College of Physics and College of Electronic and Information Engineering, Qingdao University , Qingdao 266071, China.
authors.forename: Fukai
authors.identifier: http://orcid.org/0000-0002-7158-9559
authors.initials: F
authors.lastname: Shan
keywords: In2O3; UV treatment; field-effect transistors; inverters; nanofibers; photochemical activation