title: Room-temperature short-wavelength infrared Si photodetector.
abstract: The optoelectronic applications of Si are restricted to the visible and near-infrared spectral range due to its 1.12 eV-indirect band gap. Sub-band gap light detection in Si, for instance, has been a long-standing scientific challenge for many decades since most photons with sub-band gap energies pass through Si unabsorbed. This fundamental shortcoming, however, can be overcome by introducing non-equilibrium deep-level dopant concentrations into Si, which results in the formation of an impurity band allowing for strong sub-band gap absorption. Here, we present steady-state room-temperature short-wavelength infrared p-n photodiodes from single-crystalline Si hyperdoped with Se concentrations as high as 9 × 1020cm-3, which are introduced by a robust and reliable non-equilibrium processing consisting of ion implantation followed by millisecond-range flash lamp annealing. We provide a detailed description of the material properties, working principle and performance of the photodiodes as well as the main features in the studied wavelength region. This work fundamentally contributes to establish the short-wavelength infrared detection by hyperdoped Si in the forefront of the state-of-the-art of short-IR Si photonics.
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Yonder
authors.initials: Y
authors.lastname: Berencén
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Slawomir
authors.initials: S
authors.lastname: Prucnal
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Fang
authors.initials: F
authors.lastname: Liu
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Ilona
authors.initials: I
authors.lastname: Skorupa
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: René
authors.initials: R
authors.lastname: Hübner
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Lars
authors.initials: L
authors.lastname: Rebohle
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Shengqiang
authors.initials: S
authors.lastname: Zhou
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Harald
authors.initials: H
authors.lastname: Schneider
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.|Technische Universität Dresden, 01062 Dresden, Germany.
authors.forename: Manfred
authors.initials: M
authors.lastname: Helm
authors.affiliation: Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P.O. Box 510119, 01314 Dresden, Germany.
authors.forename: Wolfgang
authors.initials: W
authors.lastname: Skorupa