title: Facile Synthesis of γ-In2Se3Nanoflowers toward High Performance Self-Powered Broadband γ-In2Se3/Si Heterojunction Photodiode.
abstract: An effective colloidal process involving the hot-injection method is developed to synthesize uniform nanoflowers consisting of 2D γ-In2Se3nanosheets. By exploiting the narrow direct bandgap and high absorption coefficient in the visible light range of In2Se3, a high-quality γ-In2Se3/Si heterojunction photodiode is fabricated. This photodiode shows a high photoresponse under light illumination, short response/recovery times, and long-term durability. In addition, the γ-In2Se3/Si heterojunction photodiode is self-powered and displays a broadband spectral response ranging from UV to IR with a high responsivity and detectivity. These excellent performances make the γ-In2Se3/Si heterojunction very interesting as highly efficient photodetectors.
authors.affiliation: School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.|State Key Laboratory of Silicon Materials, Hangzhou, 310027, P. R. China.
authors.forename: Shuo
authors.initials: S
authors.lastname: Chen
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Xuemei
authors.initials: X
authors.lastname: Liu
authors.affiliation: School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.|State Key Laboratory of Silicon Materials, Hangzhou, 310027, P. R. China.
authors.forename: Xvsheng
authors.initials: X
authors.lastname: Qiao
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Xia
authors.initials: X
authors.lastname: Wan
authors.affiliation: School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Khurram
authors.initials: K
authors.lastname: Shehzad
authors.affiliation: Laboratory of Glasses and Ceramics, Institute of Chemistry, CNRS-Université de Rennes I, Campus de Beaulieu, 35042, Rennes Cedex, France.
authors.forename: Xianghua
authors.initials: X
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Silicon Materials, Hangzhou, 310027, P. R. China.|School of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.
authors.forename: Yang
authors.initials: Y
authors.lastname: Xu
authors.affiliation: School of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, P. R. China.|State Key Laboratory of Silicon Materials, Hangzhou, 310027, P. R. China.
authors.forename: Xianping
authors.initials: X
authors.lastname: Fan
keywords: high detectivity; nanoflowers; photodetectors; γ-In2Se3/Si heterojunction