title: Effects of Nitrogen and Hydrogen Codoping on the Electrical Performance and Reliability of InGaZnO Thin-Film Transistors.
abstract: Despite intensive research on improvement in electrical performances of ZnO-based thin-film transistors (TFTs), the instability issues have limited their applications for complementary electronics. Herein, we have investigated the effect of nitrogen and hydrogen (N/H) codoping on the electrical performance and reliability of amorphous InGaZnO (α-IGZO) TFTs. The performance and bias stress stability of α-IGZO device were simultaneously improved by N/H plasma treatment with a high field-effect mobility of 45.3 cm2/(V s) and small shifts of threshold voltage (Vth). On the basis of X-ray photoelectron spectroscopy analysis, the improved electrical performances of α-IGZO TFT should be attributed to the appropriate amount of N/H codoping, which could not only control the Vthand carrier concentration efficiently, but also passivate the defects such as oxygen vacancy due to the formation of stable Zn-N and N-H bonds. Meanwhile, low-frequency noise analysis indicates that the average trap density near the α-IGZO/SiO2interface is reduced by the nitrogen and hydrogen plasma treatment. This method could provide a step toward the development of α-IGZO TFTs for potential applications in next-generation high-definition optoelectronic displays.
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Ablat
authors.initials: A
authors.lastname: Abliz
authors.affiliation: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
authors.forename: Qingguo
authors.initials: Q
authors.lastname: Gao
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Da
authors.initials: D
authors.lastname: Wan
authors.affiliation: Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China.
authors.forename: Xingqiang
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Xu
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Chuansheng
authors.initials: C
authors.lastname: Liu
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Changzhong
authors.initials: C
authors.lastname: Jiang
authors.affiliation: Wuhan National High Magnetic Field Center and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
authors.forename: Xuefei
authors.initials: X
authors.lastname: Li
authors.affiliation: Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China.
authors.forename: Huipeng
authors.identifier: http://orcid.org/0000-0003-1706-3174
authors.initials: H
authors.lastname: Chen
authors.affiliation: Institute of Optoelectronic Display, Fuzhou University , Fuzhou 350002, China.
authors.forename: Tailiang
authors.initials: T
authors.lastname: Guo
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.
authors.forename: Jinchai
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Microelectronics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, School of Physics and Technology, Wuhan University , Wuhan 430072, China.|Key Laboratory for Micro-/Nano-Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University , Changsha 410082, China.
authors.forename: Lei
authors.identifier: http://orcid.org/0000-0003-1325-2410
authors.initials: L
authors.lastname: Liao
keywords: InGaZnO; low-frequency noise; plasma treatment; reliability; thin-film transistors