title: A sapphire based monolithic integrated optrode.
abstract: A novel kind of optrode fabricated on a sapphire substrate is proposed for optogenetic applications in neuroscience. Eight thin-film neural electrodes and a GaN-LED are monolithically integrated on the surface of a sapphire shank. The LED is used for optogenetic stimulation and the multiple electrodes are used for simultaneous recording of neural activities. The output power density of the LED is 1-19 mW/mm2 at 468 nm, driving with a current from 0.7-10 mA. The mean electrochemical impedance of the eight recoding sites on the optrode at 1 kHz is 385 kΩ. The highest temperature-raise at tissue around the LED is almost 1 °C when the output power density is 3 mw/mm2. The monolithic integrated structure will make it a powerful tool for optogenetics.
authors.lastname: He Zhang
authors.lastname: Weihua Pei
authors.lastname: Xiaowei Yang
authors.lastname: Xuhong Guo
authors.lastname: Xiao Xing
authors.lastname: Ruicong Liu
authors.lastname: Yuanyuan Liu
authors.lastname: Qiang Gui
authors.lastname: Hongda Chen
mesh_terms: D000537:Aluminum Oxide / Q000737:chemistry; D000818:Animals; D001921:Brain; D017097:Electric Impedance; D004566:Electrodes; D004867:Equipment Design; D062308:Optogenetics / Q000295:instrumentation* / Q000379:methods*; D013696:Temperature
chemical_list: D000537:Aluminum Oxide