title: Analysis of the interface characteristics of CVD-grown monolayer MoS2by noise measurements.
abstract: We investigated the current-voltage and noise characteristics of two-dimensional (2D) monolayer molybdenum disulfide (MoS2) synthesized by chemical vapor deposition (CVD). A large number of trap states were produced during the CVD process of synthesizing MoS2, resulting in a disordered monolayer MoS2system. The interface trap density between CVD-grown MoS2and silicon dioxide was extracted from the McWhorter surface noise model. Notably, generation-recombination noise which is attributed to charge trap states was observed at the low carrier density regime. The relation between the temperature and resistance following the power law of a 2D inverted-random void model supports the idea that disordered CVD-grown monolayer MoS2can be analyzed using a percolation theory. This study can offer a viewpoint to interpret synthesized low-dimensional materials as highly disordered systems.
authors.affiliation: Department of Physics and Astronomy, and Institute of Applied Physics, Seoul National University, Seoul 08826, Republic of Korea.
authors.forename: Tae-Young
authors.initials: TY
authors.lastname: Kim
authors.forename: Younggul
authors.initials: Y
authors.lastname: Song
authors.forename: Kyungjune
authors.initials: K
authors.lastname: Cho
authors.forename: Matin
authors.initials: M
authors.lastname: Amani
authors.forename: Geun
authors.initials: G
authors.lastname: Ho Ahn
authors.forename: Jae-Keun
authors.initials: JK
authors.lastname: Kim
authors.forename: Jinsu
authors.initials: J
authors.lastname: Pak
authors.forename: Seungjun
authors.initials: S
authors.lastname: Chung
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
authors.forename: Takhee
authors.initials: T
authors.lastname: Lee