title: Interface Control of Ferroelectricity in an SrRuO3/BaTiO3/SrRuO3Capacitor and its Critical Thickness.
abstract: The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. In this study, it is demonstrated that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3(SRO/BTO/SRO) ferroelectric (FE) capacitors. The SRO/BTO/SRO heterostructures are grown by a pulsed laser deposition method. The top SRO/BTO interface, grown at high PO2 (around 150 mTorr), usually exhibits a mixture of RuO2-BaO and SrO-TiO2terminations. By reducing PO2, the authors obtain atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2termination. Using capacitor devices with symmetric and uniform interfacial termination, it is demonstrated for the first time that the FE critical thickness can reach the theoretical limit of 3.5 unit cells.
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Yeong Jae
authors.initials: YJ
authors.lastname: Shin
authors.affiliation: Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Yoonkoo
authors.initials: Y
authors.lastname: Kim
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Sung-Jin
authors.initials: SJ
authors.lastname: Kang
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Ho-Hyun
authors.initials: HH
authors.lastname: Nahm
authors.affiliation: Department of Physics, Indian Institute of Technology Madras, Chennai, 600036, India.
authors.forename: Pattukkannu
authors.initials: P
authors.lastname: Murugavel
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Jeong Rae
authors.initials: JR
authors.lastname: Kim
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Myung Rae
authors.initials: MR
authors.lastname: Cho
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Lingfei
authors.initials: L
authors.lastname: Wang
authors.affiliation: Department of Physics, Sookmyung Women's University, Seoul, 04310, Republic of Korea.
authors.forename: Sang Mo
authors.initials: SM
authors.lastname: Yang
authors.affiliation: Department of Physics, University of Suwon, Hwaseong, Gyunggi-do, 18323, Republic of Korea.
authors.forename: Jong-Gul
authors.initials: JG
authors.lastname: Yoon
authors.affiliation: Department of Physics, Soongsil University, Seoul, 06978, Republic of Korea.
authors.forename: Jin-Seok
authors.initials: JS
authors.lastname: Chung
authors.affiliation: Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Miyoung
authors.initials: M
authors.lastname: Kim
authors.affiliation: Advanced Photon Source, Argonne National Laboratory, Lemont, IL, 60439, USA.
authors.forename: Hua
authors.initials: H
authors.lastname: Zhou
authors.affiliation: Department of Physics, Pukyong National University, Busan, 48513, Republic of Korea.
authors.forename: Seo Hyoung
authors.initials: SH
authors.lastname: Chang
authors.affiliation: Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul, 08826, Republic of Korea.|Department of Physics and Astronomy, Seoul National University, Seoul, 08826, Republic of Korea.
authors.forename: Tae Won
authors.initials: TW
authors.lastname: Noh
keywords: BaTiO3; ferroelectric critical thickness; ferroelectricity; interface engineering