title: Magnetic Nanoplatelet-Based Spin Memory Device Operating at Ambient Temperatures.
abstract: There is an increasing demand for realizing a simple Si based universal memory device working at ambient temperatures. In principle, nonvolatile magnetic memory can operate at low power consumption and high frequencies. However, in order to compete with existing memory technology, size reduction and simplification of the used material systems are essential. In this work, the chiral-induced spin selectivity effect is used along with 30-50 nm ferromagnetic nanoplatelets in order to realize a simple magnetic memory device. The vertical memory is Si compatible, easy to fabricate, and in principle can be scaled down to a single nanoparticle size. Results show clear dual magnetization behavior with threefold enhancement between the one and zero states. The magnetization of the device is accompanied with large avalanche like noise that is ascribed to the redistribution of current densities due to spin accumulation inducing coupling effects between the different nanoplatelets.
authors.affiliation: Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Institute of Chemistry, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Guy
authors.initials: G
authors.lastname: Koplovitz
authors.affiliation: Department of Materials, Imperial College London, London, SW7 2AZ, UK.|Laboratory for Multifunctional Materials, Department of Materials, ETH Zurich, Zurich, 8093, Switzerland.
authors.forename: Darinka
authors.initials: D
authors.lastname: Primc
authors.affiliation: Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Oren
authors.initials: O
authors.lastname: Ben Dor
authors.affiliation: Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Shira
authors.initials: S
authors.lastname: Yochelis
authors.affiliation: Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Institute of Chemistry, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Dvir
authors.initials: D
authors.lastname: Rotem
authors.affiliation: Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Institute of Chemistry, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Danny
authors.initials: D
authors.lastname: Porath
authors.affiliation: Department of Applied Physics, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.|Center for Nanoscience and Nanotechnology, Hebrew University of Jerusalem, Jerusalem, 91904, Israel.
authors.forename: Yossi
authors.initials: Y
authors.lastname: Paltiel
keywords: magnetic memory; magnetic nanoparticles; molecular electronics; self-assembled monolayers; spintronics