title: Significant improvement in Mn2O3transition metal oxide electrical conductivity via high pressure.
abstract: Highly efficient energy storage is in high demand for next-generation clean energy applications. As a promising energy storage material, the application of Mn2O3is limited due to its poor electrical conductivity. Here, high-pressure techniques enhanced the electrical conductivity of Mn2O3significantly. In situ synchrotron micro X-Ray diffraction, Raman spectroscopy and resistivity measurement revealed that resistivity decreased with pressure and dramatically dropped near the phase transition. At the highest pressure, resistivity reduced by five orders of magnitude and the sample showed metal-like behavior. More importantly, resistivity remained much lower than its original value, even when the pressure was fully released. This work provides a new method to enhance the electronic properties of Mn2O3using high-pressure treatment, benefiting its applications in energy-related fields.
authors.affiliation: Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd. Pudong, Shanghai 201203, P.R. China.|The Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720, USA.
authors.forename: Fang
authors.initials: F
authors.lastname: Hong
authors.affiliation: Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd. Pudong, Shanghai 201203, P.R. China.|The Advanced Light Source, Lawrence Berkeley National Laboratory, 1 Cyclotron Rd, Berkeley, CA 94720, USA.
authors.forename: Binbin
authors.initials: B
authors.lastname: Yue
authors.affiliation: SPring-8/JASRI, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo 679-5198, Japan.
authors.forename: Naohisa
authors.initials: N
authors.lastname: Hirao
authors.affiliation: Geophysical Laboratory, Carnegie Institution of Washington, Washington, DC 20015, USA.
authors.forename: Zhenxian
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Center for High Pressure Science and Technology Advanced Research, 1690 Cailun Rd. Pudong, Shanghai 201203, P.R. China.
authors.forename: Bin
authors.initials: B
authors.lastname: Chen