title: Magnetoresistance Behavior of Conducting Filaments in Resistive-Switching NiO with Different Resistance States.
abstract: The resistive switching (RS) effect in various materials has attracted much attention due to its interesting physics and potential for applications. NiO is an important system and its RS effect has been generally explained by the formation/rupture of Ni-related conducting filaments. These filaments are unique since they are formed by an electroforming process, so it is interesting to explore their magnetoresistance (MR) behavior, which can also shed light on unsolved issues such as the nature of the filaments and their evolution in the RS process, and this behavior is also important for multifunctional devices. Here, we focus on MR behavior in NiO RS films with different resistance states. Rich and interesting MR behaviors have been observed, including the normal and anomalous anisotropic magnetoresistance and tunneling magnetoresistance, which provide new insights into the nature of the filaments and their evolution in the RS process. First-principles calculation reveals the essential role of oxygen migration into the filaments during the RESET process and can account for the experimental results. Our work provides a new avenue for exploration of the conducting filaments in resistive switching materials and is significant for understanding the mechanism of RS effect and multifunctional devices.
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Diyang
authors.initials: D
authors.lastname: Zhao
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Shuang
authors.initials: S
authors.lastname: Qiao
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Shandong Institute of Aerospace Electronics Technology , Yantai 264670, China.
authors.forename: Yuxiang
authors.initials: Y
authors.lastname: Luo
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Aitian
authors.identifier: http://orcid.org/0000-0003-3535-9470
authors.initials: A
authors.lastname: Chen
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Pengfei
authors.initials: P
authors.lastname: Zhang
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Ping
authors.initials: P
authors.lastname: Zheng
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Zhong
authors.initials: Z
authors.lastname: Sun
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Minghua
authors.initials: M
authors.lastname: Guo
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.
authors.forename: Fu-Kuo
authors.initials: FK
authors.lastname: Chiang
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Jian
authors.initials: J
authors.lastname: Wu
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Jianlin
authors.initials: J
authors.lastname: Luo
authors.affiliation: Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences , Beijing 100190, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Jianqi
authors.initials: J
authors.lastname: Li
authors.affiliation: Department of Electronics and Materials Science, Graduate School of Integrated Science and Technology, Shizuoka University , Hamamatsu 432-8561, Japan.
authors.forename: Satoshi
authors.initials: S
authors.lastname: Kokado
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Yayu
authors.initials: Y
authors.lastname: Wang
authors.affiliation: Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University , Beijing 100084, China.|Collaborative Innovation Center of Quantum Matter , Beijing 100084, China.
authors.forename: Yonggang
authors.identifier: http://orcid.org/0000-0002-7803-7378
authors.initials: Y
authors.lastname: Zhao
keywords: anisotropic magnetoresistance; conducting filaments; first-principles calculation; resistive switching effect; tunneling magnetoresistance