title: Gilbert damping in CoFeB/GaAs(001) film with enhanced in-plane uniaxial magnetic anisotropy.
abstract: A 3.5 nm amorphous CoFeB film was sputtered on GaAs (001) wafer substrate without applying magnetic field during deposition, and a significant in-plane uniaxial magnetic anisotropy (UMA) field (Hu) of about 300 Oe could be achieved. To precisely determine the intrinsic Gilbert damping constant (α) of this film, both ferromagnetic resonance (FMR) and time-resolved magneto-optical Kerr effect (TRMOKE) techniques were utilized. With good fitting of the dynamic spectra of FMR and TRMOKE, α is calculated to be 0.010 and 0.013, respectively. Obviously, the latter is 30% larger than the former, which is due to the transient heating effect during the TRMOKE measurement. In comparison with ordinary amorphous CoFeB films with negligible magnetic anisotropies, α is enhanced significantly in the CoFeB/GaAs(001) film, which may be mainly resulted from the enhanced spin-orbit coupling induced by the CoFeB/GaAs interface. However, the significant in-plane UMA plays minor role in the enhancement of α.
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.|Department of Mathematics and Physics, Nanjing Institute of Technology, Nanjing 211167, P. R. China.
authors.forename: H Q
authors.initials: HQ
authors.lastname: Tu
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, P. R. China.
authors.forename: B
authors.initials: B
authors.lastname: Liu
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, P. R. China.
authors.forename: D W
authors.initials: DW
authors.lastname: Huang
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, P. R. China.
authors.forename: X Z
authors.initials: XZ
authors.lastname: Ruan
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, P. R. China.
authors.forename: B
authors.initials: B
authors.lastname: You
authors.affiliation: Department of Physics and Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Z C
authors.initials: ZC
authors.lastname: Huang
authors.affiliation: Department of Physics and Jiangsu Key Laboratory of Advanced Metallic Materials, Southeast University, Nanjing 211189, P. R. China.
authors.forename: Y
authors.initials: Y
authors.lastname: Zhai
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Y
authors.initials: Y
authors.lastname: Gao
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: J
authors.initials: J
authors.lastname: Wang
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: L J
authors.initials: LJ
authors.lastname: Wei
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.
authors.forename: Y
authors.initials: Y
authors.lastname: Yuan
authors.affiliation: School of Electronic Science and Engineering, Nanjing University, Nanjing 210046, P. R. China.
authors.forename: Y B
authors.initials: YB
authors.lastname: Xu
authors.affiliation: National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093, P. R. China.|Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, P. R. China.
authors.forename: J
authors.initials: J
authors.lastname: Du