title: Wavelength-Tunable Electroluminescent Light Sources from Individual Ga-Doped ZnO Microwires.
abstract: Electrically driven wavelength-tunable light emission from biased individual Ga-doped ZnO microwires (ZnO:Ga MWs) is demonstrated. Single crystalline ZnO:Ga MWs with different Ga-doping concentrations have been synthesized using a one-step chemical vapor deposition method. Strong electrically driven light emission from individual ZnO:Ga MW based devices is realized with tunable colors, and the emission region is localized toward the center of the wires. Increasing Ga-doping concentration in the MWs can lead to the redshift of electroluminescent emissions in the visible range. Interestingly, owing to the lack of rectification characteristics, relevant electrical measurement results show that the alternating current-driven light emission functions excellently on the ZnO:Ga MWs. Consequently, individual ZnO:Ga MWs, which can be analogous to incandescent sources, offer unique possibilities for future electroluminescence light sources. This typical multicolor emitter can be used to rival and complement other conventional semiconductor devices in displays and lighting.
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China.
authors.forename: Mingming
authors.initials: M
authors.lastname: Jiang
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China.|Graduate University of the Chinese Academy of Sciences, Beijing, 100049, P. R. China.
authors.forename: Gaohang
authors.initials: G
authors.lastname: He
authors.affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
authors.forename: Hongyu
authors.initials: H
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China.
authors.forename: Zhenzhong
authors.initials: Z
authors.lastname: Zhang
authors.affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
authors.forename: Lingxia
authors.initials: L
authors.lastname: Zheng
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China.
authors.forename: Chongxin
authors.initials: C
authors.lastname: Shan
authors.affiliation: State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, No. 3888 Dongnanhu Road, Changchun, 130033, P. R. China.
authors.forename: Dezhen
authors.initials: D
authors.lastname: Shen
authors.affiliation: Department of Materials Science, Fudan University, Shanghai, 200433, P. R. China.
authors.forename: Xiaosheng
authors.initials: X
authors.lastname: Fang
keywords: Ga-doped ZnO microwires; Joule heating; hot electron; light-emitting devices