title: Highly flexible resistive switching memory based on amorphous-nanocrystalline hafnium oxide films.
abstract: Flexible and transparent resistive switching memories are highly desired for the construction of portable and even wearable electronics. Upon optimization of the microstructure wherein an amorphous-nanocrystalline hafnium oxide thin film is fabricated, an all-oxide based transparent RRAM device with stable resistive switching behavior that can withstand a mechanical tensile stress of up to 2.12% is obtained. It is demonstrated that the superior electrical, thermal and mechanical performance of the ITO/HfOx/ITO device can be ascribed to the formation of pseudo-straight metallic hafnium conductive filaments in the switching layer, and is only limited by the choice of electrode materials. When the ITO bottom electrode is replaced with platinum metal, the mechanical failure threshold of the device can be further extended.
authors.affiliation: Key Laboratory of Magnetic Molecules and Magnetic Information Materials of Ministry of Education, School of Chemistry and Materials Science, Shanxi Normal University, Linfen, Shanxi 041004, China. xuxh@dns.sxnu.edu.cn.
authors.forename: Jie
authors.initials: J
authors.lastname: Shang
authors.forename: Wuhong
authors.initials: W
authors.lastname: Xue
authors.forename: Zhenghui
authors.initials: Z
authors.lastname: Ji
authors.forename: Gang
authors.initials: G
authors.lastname: Liu
authors.forename: Xuhong
authors.initials: X
authors.lastname: Niu
authors.forename: Xiaohui
authors.initials: X
authors.lastname: Yi
authors.forename: Liang
authors.initials: L
authors.lastname: Pan
authors.forename: Qingfeng
authors.initials: Q
authors.lastname: Zhan
authors.forename: Xiao-Hong
authors.initials: XH
authors.lastname: Xu
authors.forename: Run-Wei
authors.initials: RW
authors.lastname: Li