title: Quantitative Determination on Ionic-Liquid-Gating Control of Interfacial Magnetism.
abstract: Ionic-liquid gating on a functional thin film with a low voltage has drawn a lot of attention due to rich chemical, electronic, and magnetic phenomena at the interface. Here, a key challenge in quantitative determination of voltage-controlled magnetic anisotropy (VCMA) in Au/[DEME]+[TFSI]-/Co field-effect transistor heterostructures is addressed. The magnetic anisotropy change as response to the gating voltage is precisely detected by in situ electron spin resonance measurements. A reversible change of magnetic anisotropy up to 219 Oe is achieved with a low gating voltage of 1.5 V at room temperature, corresponding to a record high VCMA coefficient of ≈146 Oe V-1. Two gating effects, the electrostatic doping and electrochemical reaction, are distinguished at various gating voltage regions, as confirmed by X-ray photoelectron spectroscopy and atomic force microscopy experiments. This work shows a unique ionic-liquid-gating system for strong interfacial magnetoelectric coupling with many practical advantages, paving the way toward ion-liquid-gating spintronic/electronic devices.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Shishun
authors.initials: S
authors.lastname: Zhao
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Ziyao
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Bin
authors.initials: B
authors.lastname: Peng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Mingmin
authors.initials: M
authors.lastname: Zhu
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Mengmeng
authors.initials: M
authors.lastname: Feng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Qu
authors.initials: Q
authors.lastname: Yang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Yan
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ren
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.|Department of Chemistry and 4D LABS, Simon Fraser University, Burnaby, British Columbia, V5A 1S6, Canada.
authors.forename: Zuo-Guang
authors.initials: ZG
authors.lastname: Ye
authors.affiliation: Quantum Condensed Matter Division, Oak Ridge National Laboratory, Oak Ridge, TN, 37831, USA.
authors.forename: Yaohua
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University, Xi'an, 710049, China.
authors.forename: Ming
authors.initials: M
authors.lastname: Liu
keywords: ferromagnetic resonance; interfacial oxidation; ionic liquid gating; voltage control of magnetism