title: Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches.
abstract: Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs.
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Lingxiu
authors.initials: L
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Li
authors.initials: L
authors.lastname: He
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Hui Shan
authors.initials: HS
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Haomin
authors.initials: H
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|Graduate University of the Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Shujie
authors.initials: S
authors.lastname: Tang
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.|State Key Laboratory of ASIC &System, School of Information Science and Technology, Fudan University, Shanghai 200433, China.
authors.forename: Chunxiao
authors.initials: C
authors.lastname: Cong
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Hong
authors.initials: H
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Li
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Xia
authors.affiliation: National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China.
authors.forename: Tianxin
authors.initials: T
authors.lastname: Li
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.
authors.forename: Tianru
authors.initials: T
authors.lastname: Wu
authors.affiliation: School of Optical and Electronic Information, Huazhong University of Science and Technology, Wuhan 430074, China.
authors.forename: Daoli
authors.initials: D
authors.lastname: Zhang
authors.affiliation: School of Physics and Electronics, Central South University, Changsha 410083, China.
authors.forename: Lianwen
authors.initials: L
authors.lastname: Deng
authors.affiliation: Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore 637371, Singapore.
authors.forename: Ting
authors.identifier: 0000-0002-0113-2895
authors.initials: T
authors.lastname: Yu
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Xiaoming
authors.initials: X
authors.lastname: Xie
authors.affiliation: State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, Shanghai 200050, China.|School of Physical Science and Technology, ShanghaiTech University, 319 Yueyang Road, Shanghai 200031, China.
authors.forename: Mianheng
authors.initials: M
authors.lastname: Jiang