title: Junction-Structure-Dependent Schottky Barrier Inhomogeneity and Device Ideality of Monolayer MoS2Field-Effect Transistors.
abstract: Although monolayer transition metal dichalcogenides (TMDs) exhibit superior optical and electrical characteristics, their use in digital switching devices is limited by incomplete understanding of the metal contact. Comparative studies of Au top and edge contacts with monolayer MoS2reveal a temperature-dependent ideality factor and Schottky barrier height (SBH). The latter originates from inhomogeneities in MoS2caused by defects, charge puddles, and grain boundaries, which cause local variation in the work function at Au-MoS2junctions and thus different activation temperatures for thermionic emission. However, the effect of inhomogeneities due to impurities on the SBH varies with the junction structure. The weak Au-MoS2interaction in the top contact, which yields a higher SBH and ideality factor, is more affected by inhomogeneities than the strong interaction in the edge contact. Observed differences in the SBH and ideality factor in different junction structures clarify how the SBH and inhomogeneities can be controlled in devices containing TMD materials.
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Byoung Hee
authors.initials: BH
authors.lastname: Moon
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Gang Hee
authors.initials: GH
authors.lastname: Han
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Hyun
authors.initials: H
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Homin
authors.initials: H
authors.lastname: Choi
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Jung Jun
authors.initials: JJ
authors.lastname: Bae
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Jaesu
authors.initials: J
authors.lastname: Kim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Youngjo
authors.initials: Y
authors.lastname: Jin
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Hye Yun
authors.initials: HY
authors.lastname: Jeong
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Min-Kyu
authors.initials: MK
authors.lastname: Joo
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Young Hee
authors.identifier: http://orcid.org/0000-0001-7403-8157
authors.initials: YH
authors.lastname: Lee
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.|Department of Energy Science, Sungkyunkwan University , Suwon 16419, Republic of Korea.
authors.forename: Seong Chu
authors.identifier: http://orcid.org/0000-0002-0751-1458
authors.initials: SC
authors.lastname: Lim
keywords: Fermi level pinning; MoS2−metal contacts; Schottky barrier inhomogeneity; contact resistance; edge contact; ideality factor