title: Direct evidence of flat band voltage shift for TiN/LaO or ZrO/SiO2stack structure via work function depth profiling.
abstract: We demonstrated that a flat band voltage (VFB) shift could be controlled in TiN/(LaO or ZrO)/SiO2stack structures. The VFBshift described in term of metal diffusion into the TiN film and silicate formation in the inserted (LaO or ZrO)/SiO2interface layer. The metal doping and silicate formation confirmed by using transmission electron microscopy (TEM) and energy dispersive spectroscopy (EDS) line profiling, respectively. The direct work function measurement technique allowed us to make direct estimate of a variety of flat band voltages (VFB). As a function of composition ratio of La or Zr to Ti in the region of a TiN/(LaO or ZrO)/SiO2/Si stack, direct work function modulation driven by La and Zr doping was confirmed with the work functions obtained from the cutoff value of secondary electron emission by auger electron spectroscopy (AES). We also suggested an analytical method to determine the interface dipole via work function depth profiling.
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Sung
authors.initials: S
authors.lastname: Heo
authors.affiliation: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, South Korea.
authors.forename: Hyoungsun
authors.initials: H
authors.lastname: Park
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Dong-Su
authors.initials: DS
authors.lastname: Ko
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Yong Su
authors.initials: YS
authors.lastname: Kim
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Yong Koo
authors.initials: YK
authors.lastname: Kyoung
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Hyung-Ik
authors.initials: HI
authors.lastname: Lee
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Eunae
authors.initials: E
authors.lastname: Cho
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Hyo Sug
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Gyung-Su
authors.initials: GS
authors.lastname: Park
authors.affiliation: Platform Technology Lab, Samsung Advanced Institute of Technology, 130, Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do 16678, South Korea.
authors.forename: Jai Kwang
authors.initials: JK
authors.lastname: Shin
authors.affiliation: DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea.
authors.forename: Dongjin
authors.initials: D
authors.lastname: Lee
authors.affiliation: DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea.
authors.forename: Jieun
authors.initials: J
authors.lastname: Lee
authors.affiliation: DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea.
authors.forename: Kyoungho
authors.initials: K
authors.lastname: Jung
authors.affiliation: DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea.
authors.forename: Moonyoung
authors.initials: M
authors.lastname: Jeong
authors.affiliation: DRAM Technology Development Team, Semiconductor R&D Center, 1, Samsungjeonja-ro, Hwaseong-si, Gyeonggi-do 18448, South Korea.
authors.forename: Satoru
authors.initials: S
authors.lastname: Yamada
authors.affiliation: Department of Physics, Chungbuk National University, 1, Chungdae-ro, Seowon-gu, Cheongju-si, Chungcheongbuk-do 28644, South Korea.
authors.forename: Hee Jae
authors.initials: HJ
authors.lastname: Kang
authors.affiliation: College of Information and Communication Engineering, Sungkyunkwan University, 2066 Seobu-ro, Jangan-gu, Suwon-si, Gyeonggi-do 16419, South Korea.
authors.forename: Byoung-Deog
authors.initials: BD
authors.lastname: Choi