title: Terahertz metamaterials and systems based on rolled-up 3D elements: designs, technological approaches, and properties.
abstract: Electromagnetic metamaterials opened the way to extraordinary manipulation of radiation. Terahertz (THz) and optical metamaterials are usually fabricated by traditional planar-patterning approaches, while the majority of practical applications require metamaterials with 3D resonators. Making arrays of precise 3D micro- and nanoresonators is still a challenging problem. Here we present a versatile set of approaches to fabrication of metamaterials with 3D resonators rolled-up from strained films, demonstrate novel THz metamaterials/systems, and show giant polarization rotation by several chiral metamaterials/systems. The polarization spectra of chiral metamaterials on semiconductor substrates exhibit ultrasharp quasiperiodic peaks. Application of 3D printing allowed assembling more complex systems, including the bianisotropic system with optimal microhelices, which showed an extreme polarization azimuth rotation of 85° with drop by 150° at a frequency shift of 0.4%. We refer the quasiperiodic peaks in the polarization spectra of metamaterial systems to the interplay of different resonances, including peculiar chiral waveguide resonance. Formed metamaterials cannot be made by any other presently available technology. All steps of presented fabrication approaches are parallel, IC-compatible and allow mass fabrication with scaling of rolled-up resonators up to visible frequencies. We anticipate that the rolled-up meta-atoms will be ideal building blocks for future generations of commercial metamaterials, devices and systems on their basis.
authors.affiliation: Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Victor Ya
authors.initials: VY
authors.lastname: Prinz
authors.affiliation: Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Elena V
authors.initials: EV
authors.lastname: Naumova
authors.affiliation: Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Sergey V
authors.initials: SV
authors.lastname: Golod
authors.affiliation: Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Vladimir A
authors.initials: VA
authors.lastname: Seleznev
authors.affiliation: Rzhanov Institute of Semiconductor Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Andrey A
authors.initials: AA
authors.lastname: Bocharov
authors.affiliation: Budker Institute of Nuclear Physics, Russian Academy of Science, Siberian Branch, Novosibirsk, 630090, Russia.
authors.forename: Vitaliy V
authors.initials: VV
authors.lastname: Kubarev