title: Strain Effect on the Electronic and Optical Properties of CdSe Nanowires.
abstract: First-principles density functional theory (DFT) simulations were carried out to study the strain dependence on the electronic and optical properties of cadmium selenide (CdSe) nanowires (NWs). The band structures, effective masses of electron and holes, dielectric properties, and other optical properties (such as extinction coefficient, optical reflectivity, and absorption coefficient) were calculated under both compressive and tensile uniaxial strains. Size-dependence was also discussed by comparing results among CdSe wires with various diameters. Simulation results show that an interesting band-switch behavior occurs at the valence bands regardless of size. The cause and the consequences of such band-switch behavior were also studied. Further strain dependence on corresponding electronic and optical properties were examined as well. Our results provide insights to possible mechanical tuning via strain on the electronic and optical properties of CdSe NWs.
authors.affiliation: Department of Physics, Shanghai Normal University, Shanghai, 200234, People's Republic of China.
authors.forename: Hao
authors.initials: H
authors.lastname: Huan
authors.affiliation: School of Arts and Sciences, MCPHS University, Boston, MA, 02115, USA.
authors.forename: Li
authors.initials: L
authors.lastname: Chen
authors.affiliation: Department of Physics, Shanghai Normal University, Shanghai, 200234, People's Republic of China. yexiang@shnu.edu.cn.
authors.forename: Xiang
authors.initials: X
authors.lastname: Ye
keywords: Cadmium selenide; Electronic properties; Nanowire; Optical properties; Strain