title: Ferromagnetic-Antiferromagnetic Coupling by Distortion of Fe/Mn Oxygen Octahedrons in (BiFeO3)m(La0.7Sr0.3MnO3)nSuperlattices.
abstract: Interface enhanced magnetism attracts much attention due to its potential use in exploring novel structure devices. Nevertheless, the magnetic behavior at interfaces has not been quantitatively determined. In this study, abnormal magnetic moment reduction is observed in La0.7Sr0.3MnO3(LSMO)/BiFeO3(BFO) superlattices, which is induced by ferromagnetic (FM)/antiferromagnetic (AFM) coupling in the interface. With reduced repetition of the superlattice's unit cell [(LSMO)n/(BFO)n]60/n(n = 1, 2, 5, 10) on a SrTiO3substrate, magnetic moment reduction from 25.5 emu cc-1([(LSMO)10/(BFO)10]6) to 1.5 emu cc-1([(LSMO)1/(BFO)1]60) is obtained. Ab initio simulations show that due to the different magnetic domain formation energies, the magnetic moment orientation tends to be paramagnetic in the FM/AFM interface. The work focuses on the magnetic domain formation energy and provides a pathway to construct artificial heterostructures that can be an effective way to tune the magnetic moment orientation and control the magnetization of ultrathin films.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Jie
authors.initials: J
authors.lastname: Xiong
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Tianyu
authors.initials: T
authors.lastname: Lei
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Junwei
authors.initials: J
authors.lastname: Chu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Yang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Jiake
authors.initials: J
authors.lastname: Wei
authors.affiliation: Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
authors.forename: Mujin
authors.initials: M
authors.lastname: Zhuo
authors.affiliation: Department of Materials Science, University of Cambridge, 27 Charles Babbage Road, Cambridge, CB3 0FS, UK.
authors.forename: Eun-Mi
authors.initials: EM
authors.lastname: Choi
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Bowan
authors.initials: B
authors.lastname: Tao
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Wanli
authors.initials: W
authors.lastname: Zhang
authors.affiliation: Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, NM, 87545, USA.
authors.forename: Yongqiang
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China.
authors.forename: Yanrong
authors.initials: Y
authors.lastname: Li
keywords: ferromagnetic-antiferromagnetic coupling; heterointerfaces; superlattices