title: Various and Tunable Transport Properties of WSe2Transistor Formed by Metal Contacts.
abstract: The abundant electronic and optical properties of 2D materials that are just one-atom thick pave the way for many novel electronic applications. One important application is to explore the band-to-band tunneling in the heterojunction built by different 2D materials. Here, a gate-controlled WSe2transistor is constructed by using different work function metals to form the drain (Pt) and source (Cr) electrodes. The device can be gate-modulated to exhibit three modes of operation, i.e., the tunneling mode with remarkable negative differential resistance, the transition mode with a second electron tunneling phenomenon for backward bias, and finally the conventional diode mode with rectifying characteristics. In contrast to the heterojunctions built by different 2D materials, these devices show significantly enhanced tunneling current by two orders of magnitude, which may largely benefit from the clean interfaces. These results pave the way toward design of novel electronic devices using the modulation of metal work functions.
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Chunsen
authors.initials: C
authors.lastname: Liu
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Yan
authors.affiliation: State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200433, China.
authors.forename: Enze
authors.initials: E
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Xiongfei
authors.initials: X
authors.lastname: Song
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Qingqing
authors.initials: Q
authors.lastname: Sun
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Shijin
authors.initials: S
authors.lastname: Ding
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Wenzhong
authors.initials: W
authors.lastname: Bao
authors.affiliation: State Key Laboratory of Surface Physics, Department of Physics, Fudan University, Shanghai, 200433, China.
authors.forename: Faxian
authors.initials: F
authors.lastname: Xiu
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai, 200433, China.
authors.forename: David Wei
authors.initials: DW
authors.lastname: Zhang
keywords: WSe2; large tunneling current; metal contacts; tunneling effect