title: Flexible resistive random access memory devices by using NiOx/GaN microdisk arrays fabricated on graphene films.
abstract: We report flexible resistive random access memory (ReRAM) arrays fabricated by using NiOx/GaN microdisk arrays on graphene films. The ReRAM device was created from discrete GaN microdisk arrays grown on graphene films produced by chemical vapor deposition, followed by deposition of NiOxthin layers and Au metal contacts. The microdisk ReRAM arrays were transferred to flexible plastic substrates by a simple lift-off technique. The electrical and memory characteristics of the ReRAM devices were investigated under bending conditions. Resistive switching characteristics, including cumulative probability, endurance, and retention, were measured. After 1000 bending repetitions, no significant change in the device characteristics was observed. The flexible ReRAM devices, constructed by using only inorganic materials, operated reliably at temperatures as high as 180 °C.
authors.affiliation: Department of Physics and Astronomy, Institute of Applied Physics and Research Institute of Advanced Materials (RIAM), Seoul National University, Seoul 151-747, Republic of Korea.
authors.forename: Keundong
authors.initials: K
authors.lastname: Lee
authors.forename: Jong-Woo
authors.initials: JW
authors.lastname: Park
authors.forename: Youngbin
authors.initials: Y
authors.lastname: Tchoe
authors.forename: Jiyoung
authors.initials: J
authors.lastname: Yoon
authors.forename: Kunook
authors.initials: K
authors.lastname: Chung
authors.forename: Hosang
authors.initials: H
authors.lastname: Yoon
authors.forename: Sangik
authors.initials: S
authors.lastname: Lee
authors.forename: Chansoo
authors.initials: C
authors.lastname: Yoon
authors.forename: Bae
authors.initials: B
authors.lastname: Ho Park
authors.forename: Gyu-Chul
authors.initials: GC
authors.lastname: Yi