title: High Photoresponsivity Ge-dot PhotoMOSFETs for Low-power Monolithically-Integrated Si Optical Interconnects.
abstract: We report the demonstration of high-photoresponsivity Ge-dot photoMOSFETs in a standard MOS configuration for the detection of 850-1550 nm illumination. Each device has a self-organized, gate-stacking heterostructure of SiO2/Ge-dot/SiO2/SiGe-channel which is simultaneously fabricated in a single oxidation step. Superior control of the geometrical size and chemical composition for our Ge nanodots/SiO2/Si1-xGex-shell MOS structure enables the practically-achievable, gate-stacking design for our Ge-dot photoMOSFETs. Both the gate oxide thickness and the diameter of the Ge dots are controllable. Large photocurrent enhancement was achieved for our Ge-dot photoMOSFETs when electrically-biased at ON- and OFF-states based on the Ge dot mediating photovoltaic and photoconductive effects, respectively. Both photoelectric conversion efficiency and response speed are significantly improved by reducing the gate-oxide thickness from 38.5 nm to 3.5 nm, and by decreasing Ge-dot size from 90 nm to 50 nm for a given areal density of Ge dots. Photoresponsivity () values as high as 1.2 × 104A/W and 300 A/W are measured for 10 nW illumination at 850 nm and 1550 nm, respectively. A response time of 0.48 ns and a 3 dB-frequency of 2 GHz were achieved for 50 nm-Ge-dot photoMOSFETs with channel lengths of 3 μm under pulsed 850 nm illumination.
authors.affiliation: Department of Electrical Engineering, National Central University, ZhongLi, Taiwan, R.O.C.
authors.forename: Ming-Hao
authors.initials: MH
authors.lastname: Kuo
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, HsinChu, Taiwan, R.O.C.
authors.forename: Meng-Chun
authors.initials: MC
authors.lastname: Lee
authors.affiliation: Department of Electronics Engineering, National Chiao Tung University, HsinChu, Taiwan, R.O.C.
authors.forename: Horng-Chih
authors.initials: HC
authors.lastname: Lin
authors.affiliation: Department of Electrical Engineering, National Central University, ZhongLi, Taiwan, R.O.C.
authors.forename: Tom
authors.initials: T
authors.lastname: George
authors.affiliation: Department of Electrical Engineering, National Central University, ZhongLi, Taiwan, R.O.C.|Department of Electronics Engineering, National Chiao Tung University, HsinChu, Taiwan, R.O.C.
authors.forename: Pei-Wen
authors.initials: PW
authors.lastname: Li