title: Enhanced electrical property of Ni-doped CoOxhole transport layer for inverted perovskite solar cells.
abstract: Ultrathin Ni doped CoOxfilms were prepared by direct current co-sputtering at room temperature as inorganic hole transport materials for inverted perovskite solar cells. P-type doping was designed to adjust the valence band position of CoOxto match the that of CH3NH3PbI3, which would effectively eliminate the interface barrier. Moreover, the hole extraction ability would be enhanced and the power conversion efficiency of the devices hence increased from 3.68% to 9.60%. The optimized performance was also accompanied by decent stability as a result of its intrinsic stability.
authors.affiliation: State Key Laboratory of High Performance Ceramics and superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Dingxi, 1295, Changning, Shanghai, 200050, People's Republic of China. University of Chinese Academy of Sciences, Yuquan 19, Shijingshan, Beijing, 100049, People's Republic of China.
authors.forename: Aibin
authors.initials: A
authors.lastname: Huang
authors.forename: Lei
authors.initials: L
authors.lastname: Lei
authors.forename: Yu
authors.initials: Y
authors.lastname: Yu
authors.forename: Yan
authors.initials: Y
authors.lastname: Liu
authors.forename: Songwang
authors.initials: S
authors.lastname: Yang
authors.forename: Shanhu
authors.initials: S
authors.lastname: Bao
authors.forename: Xun
authors.initials: X
authors.lastname: Cao
authors.forename: Ping
authors.initials: P
authors.lastname: Jin