title: Epitaxy of Ferroelectric P(VDF-TrFE) Films via Removable PTFE Templates and Its Application in Semiconducting/Ferroelectric Blend Resistive Memory.
abstract: Ferroelectric polymer based devices exhibit great potentials in low-cost and flexible electronics. To meet the requirements of both low voltage operation and low energy consumption, thickness of ferroelectric polymer films is usually required to be less than, for example, 100 nm. However, decrease of film thickness is also accompanied by the degradation of both crystallinity and ferroelectricity and also the increase of current leakage, which surely degrades device performance. Here we report one epitaxy method based on removable poly(tetrafluoroethylene) (PTFE) templates for high-quality fabrication of ordered ferroelectric polymer thin films. Experimental results indicate that such epitaxially grown ferroelectric polymer films exhibit well improved crystallinity, reduced current leakage and good resistance to electrical breakdown, implying their applications in high-performance and low voltage operated ferroelectric devices. On the basis of this removable PTFE template method, we fabricated organic semiconducting/ferroelectric blend resistive films which presented record electrical performance with operation voltage as low as 5 V and ON/OFF ratio up to 105.
authors.affiliation: Department of Materials Science, Fudan University , Shanghai 200433, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Xia
authors.affiliation: Institute of Electrical Engineering Physics, Saarland University , Saarbrücken 66111, Germany.
authors.forename: Christian
authors.initials: C
authors.lastname: Peter
authors.affiliation: Department of Materials Science, Fudan University , Shanghai 200433, China.
authors.forename: Junhui
authors.initials: J
authors.lastname: Weng
authors.affiliation: School of Microelectronics, Fudan University , Shanghai 200433, China.
authors.forename: Jian
authors.initials: J
authors.lastname: Zhang
authors.affiliation: Institute of Electrical Engineering Physics, Saarland University , Saarbrücken 66111, Germany.
authors.forename: Herbert
authors.initials: H
authors.lastname: Kliem
authors.affiliation: School of Microelectronics, Fudan University , Shanghai 200433, China.
authors.forename: Yulong
authors.initials: Y
authors.lastname: Jiang
authors.affiliation: Department of Materials Science, Fudan University , Shanghai 200433, China.
authors.forename: Guodong
authors.identifier: http://orcid.org/0000-0001-9701-6030
authors.initials: G
authors.lastname: Zhu
keywords: epitaxy; ferroelectric polymer; removable template; resistive memory; semiconducting/ferroelectric blend