title: Density-functional study of the structures and properties of holmium-doped silicon clusters HoSin(n = 3-9) and their anions.
abstract: The structures and properties of Ho-doped Si clusters, including their adiabatic electron affinities (AEAs), simulated photoelectron spectra (PESs), stabilities, magnetic moments, and charge-transfer characteristics, were systematically investigated using four density-functional methods. The results show that the double-hybrid functional (which includes an MP2 correlation component) can accurately predict the ground-state structure and properties of Ho-doped Si clusters. The ground-state structures of HoSin(n = 3-9) are sextuplet electronic states. The structures of these Ho-doped Si clusters (aside from HoSi7) are substitutional. The ground-state structures of HoSin-are quintuplet electronic states. Their predicted AEAs are in excellent agreement with the experimental ones. The mean absolute error in the theoretical AEAs of HoSin(n = 4-9) is only 0.04 eV. The simulated PESs for HoSin-(n = 5-9) are in good agreement with the experimental PESs. Based on its simulated PES and theoretical AEA, we reassigned the experimental PES of HoSi4-and obtained an experimental AEA of 2.2 ± 0.1 eV. The dissociation energies of Ho from HoSinand HoSin-(n = 3-9) were evaluated to test the relative stabilities of the clusters. HOMO-LUMO gap analysis indicated that doping the Si clusters with the rare-earth metal atom significantly increases their photochemical reactivity. Natural population analysis showed that the magnetic moments of HoSin(n = 3-9) and their anions derive mainly from the Ho atom. It was also found that the magnetic moments of Ho in the HoSinclusters are larger than the magnetic moment of an isolated Ho atom.
authors.affiliation: School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, People's Republic of China.
authors.forename: Liyuan
authors.initials: L
authors.lastname: Hou
authors.affiliation: School of Energy and Power Engineering, Inner Mongolia University of Technology, Hohhot, 010051, People's Republic of China. yangjc@imut.edu.cnc.|Inner Mongolia Key Laboratory of Theoretical and Computational Chemistry Simulation, Hohhot, 010051, People's Republic of China. yangjc@imut.edu.cnc.
authors.forename: Jucai
authors.identifier: http://orcid.org/0000-0003-4998-0364
authors.initials: J
authors.lastname: Yang
authors.affiliation: School of Chemical Engineering, Inner Mongolia University of Technology, Hohhot, 010051, People's Republic of China.
authors.forename: Yuming
authors.initials: Y
authors.lastname: Liu
keywords: Charge transfer; Electron affinity; Ground-state structure; HoSi n; Magnetic moment