title: Charge Transport in MoS2/WSe2van der Waals Heterostructure with Tunable Inversion Layer.
abstract: Despite numerous studies on two-dimensional van der Waals heterostructures, a full understanding of the charge transport and photoinduced current mechanisms in these structures, in particular, associated with charge depletion/inversion layers at the interface remains elusive. Here, we investigate transport properties of a prototype multilayer MoS2/WSe2heterojunction via a tunable charge inversion/depletion layer. A charge inversion layer was constructed at the surface of WSe2due to its relatively low doping concentration compared to that of MoS2, which can be tuned by the back-gate bias. The depletion region was limited within a few nanometers in the MoS2side, while charges are fully depleted on the whole WSe2side, which are determined by Raman spectroscopy and transport measurements. Charge transport through the heterojunction was influenced by the presence of the inversion layer and involves two regimes of tunneling and recombination. Furthermore, photocurrent measurements clearly revealed recombination and space-charge-limited behaviors, similar to those of the heterostructures built from organic semiconductors. This contributes to research of various other types of heterostructures and can be further applied for electronic and optoelectronic devices.
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Manh-Ha
authors.initials: MH
authors.lastname: Doan
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Youngjo
authors.initials: Y
authors.lastname: Jin
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Subash
authors.initials: S
authors.lastname: Adhikari
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Sanghyub
authors.initials: S
authors.lastname: Lee
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Jiong
authors.identifier: 0000-0002-7411-0734
authors.initials: J
authors.lastname: Zhao
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Seong Chu
authors.identifier: 0000-0002-0751-1458
authors.initials: SC
authors.lastname: Lim
authors.affiliation: Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea.
authors.forename: Young Hee
authors.identifier: 0000-0001-7403-8157
authors.initials: YH
authors.lastname: Lee
keywords: charge transfer; inversion layer; photocurrent; recombination; tunneling; vdW heterostructure