title: The oxidation kinetics of thin nickel films between 250 and 500 °C.
abstract: The oxidation kinetics of thin polycrystalline Ni films is of fundamental interest as well as being relevant for potential applications. It was investigated between 250 and 500 °C for 10-150 nm thick films. Even for the thinnest films, oxidation was found to be diffusion controlled. The high density of grain boundaries in the formed NiO layer leads to a tracer diffusion coefficient that is higher than reported in the literature, indicating accelerated Ni diffusion along the grain boundaries. Cr segregation to the bottom interface in doped-NiO films hindered the acceleration of the oxidation of thin films.
authors.affiliation: Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany. r.merkle@fkf.mpg.de.
authors.forename: Y
authors.identifier: http://orcid.org/0000-0001-5622-9419
authors.initials: Y
authors.lastname: Unutulmazsoy
authors.affiliation: Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany. r.merkle@fkf.mpg.de.
authors.forename: R
authors.initials: R
authors.lastname: Merkle
authors.affiliation: Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany. r.merkle@fkf.mpg.de.
authors.forename: D
authors.initials: D
authors.lastname: Fischer
authors.affiliation: Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany. r.merkle@fkf.mpg.de.
authors.forename: J
authors.initials: J
authors.lastname: Mannhart
authors.affiliation: Max Planck Institute for Solid State Research, 70569, Stuttgart, Germany. r.merkle@fkf.mpg.de.
authors.forename: J
authors.initials: J
authors.lastname: Maier