title: Fabrication of Hydrogenated Diamond Metal-Insulator-Semiconductor Field-Effect Transistors.
abstract: Diamond is regarded as a promising material for fabrication of high-power and high-frequency electronic devices due to its remarkable intrinsic properties, such as wide band gap energy, high carrier mobility, and high breakdown field. Meanwhile, since diamond has good biocompatibility, long-term durability, good chemical inertness, and a large electron-chemical potential window, it is a suitable candidate for the fabrication of biosensors. Here, we demonstrate the fabrication of hydrogenated diamond (H-diamond) based metal-insulator-semiconductor field-effect transistors (MISFETs). The fabrication is based on the combination of laser lithography, dry-etching, atomic layer deposition (ALD), sputtering deposition (SD), electrode evaporation, and lift-off techniques. The gate insulator is high-k HfO2with a SD/ALD bilayer structure. The thin ALD-HfO2film (4.0 nm) acts as a buffer layer to prevent the hydrogen surface of the H-diamond from plasma discharge damage during the SD-HfO2deposition. The growth of H-diamond epitaxial layer, fabrication of H-diamond MISFETs, and electrical property measurements for the MISFETs is demonstrated. This chapter explains the fabrication of H-diamond FET based biosensors.
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan. liu.jiangwei@nims.go.jp.
authors.forename: Jiangwei
authors.initials: J
authors.lastname: Liu
authors.affiliation: National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki, 305-0044, Japan.
authors.forename: Yasuo
authors.initials: Y
authors.lastname: Koide
mesh_terms: D015374:Biosensing Techniques / Q000295:instrumentation*; D018130:Diamond / Q000737:chemistry*; D004566:Electrodes; D006859:Hydrogen / Q000737:chemistry*; D008670:Metals / Q000737:chemistry*; D012666:Semiconductors; D014173:Transistors, Electronic
chemical_list: D008670:Metals; D018130:Diamond; D006859:Hydrogen
keywords: Biosensor; H-diamond; MISFET; SGFET; high-k