title: Electrical and photovoltaic properties of residue-free MoS2thin films by liquid exfoliation method.
abstract: Molybdenum disulfide (MoS2) film fabricated by a liquid exfoliation method has significant potential for various applications, because of its advantages of mass production and low-temperature processes. In this study, residue-free MoS2thin films were formed during the liquid exfoliation process and their electrical properties were characterized with an interdigitated electrode. Then, the MoS2film thickness could be controlled by centrifuge condition in the range of 20 ∼ 40 nm, and its carrier concentration and mobility were measured at about 7.36 × 1016cm-3and 4.67 cm2V-1s-1, respectively. Detailed analysis on the films was done by atomic force microscopy, Raman spectroscopy, and high-resolution transmission electron microscopy measurements for verifying the film quality. For application of the photovoltaic device, a Au/MoS2/silicon/In junction structure was fabricated, which then showed power conversion efficiency of 1.01% under illumination of 100 mW cm-2.
authors.affiliation: Department of Physics and Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea.
authors.forename: Seung Kyo
authors.initials: SK
authors.lastname: Lee
authors.forename: Dongil
authors.initials: D
authors.lastname: Chu
authors.forename: Da Ye
authors.initials: DY
authors.lastname: Song
authors.forename: Sang Woo
authors.initials: SW
authors.lastname: Pak
authors.forename: Eun Kyu
authors.initials: EK
authors.lastname: Kim