title: Photoinduced Recovery of Organic Transistor Memories with Photoactive Floating-Gate Interlayers.
abstract: Optical memories based on photoresponsive organic field-effect transistors (OFETs) are of great interest due to their unique applications, such as multibit storage memories and flexible imaging circuits. Most studies of OFET-type memories have focused on the photoresponsive active channels, but more useful functions can be additionally given to the devices by using floating gates that can absorb light. In this case, effects of photoirradiation on photoactive floating-gate layers need to be fully understood. Herein, we studied the photoinduced erasing effects of floating-gate interlayers on the electrical responses of OFET-type memories and considered the possible mechanisms. Polymer/C60composites were inserted between pentacene and SiO2to form photoresponsive floating-gate interlayers in transistor memory. When exposed to light, C60generated excitons, and these photoexcited carriers contributed to the elimination of trapped charge carriers, which resulted in the recovery of OFET performance. Such memory devices exhibited bistable current states controlled with voltage-driven programming and light-driven erasure. Furthermore, these devices maintained their charge-storing properties over 10 000 s. This proof-of-concept study is expected to open up new avenues in information technology for the development of organic memories that exhibit photoinduced recovery over a wide range of wavelengths of light when combined with appropriate photoactive floating-gate materials.
authors.affiliation: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea.
authors.forename: Yong Jin
authors.initials: YJ
authors.lastname: Jeong
authors.affiliation: Analytical Science Laboratory, Samsung Advanced Institute of Technology (SAIT) , Suwon 16678, Republic of Korea.
authors.forename: Dong-Jin
authors.initials: DJ
authors.lastname: Yun
authors.affiliation: School of Chemical Engineering, Yeungnam University , Gyeongsan, North Gyeongsang 712-749, Republic of Korea.
authors.forename: Se Hyun
authors.identifier: http://orcid.org/0000-0001-7818-1903
authors.initials: SH
authors.lastname: Kim
authors.affiliation: Department of Energy Engineering, Hanyang University , Seoul 133-791, Republic of Korea.
authors.forename: Jaeyoung
authors.identifier: http://orcid.org/0000-0002-5548-8563
authors.initials: J
authors.lastname: Jang
authors.affiliation: Polymer Research Institute, Department of Chemical Engineering, Pohang University of Science and Technology , Pohang 37673, Republic of Korea.
authors.forename: Chan Eon
authors.initials: CE
authors.lastname: Park
keywords: floating gates; fullerene; optical memories; organic field-effect transistors; photoinduced recovery