title: Photoconductivity Relaxation Mechanisms of InGaAs/GaAs Quantum Dot Chain Structures.
abstract: An experimental study of the photoconductivity time decay in InGaAs/GaAs quantum dot chain structures is reported. Different photoconductivity relaxations resulting from spectrally selecting photoexcitation of InGaAs QWR or QDs as well as GaAs spacers were measured. The photoconductivity relaxation after excitation of 650 nm follows a stretched exponent with decay constant dependent on morphology of InGaAs epitaxial layers. Kinetics with 980 nm excitation are successfully described by equation that takes into account the linear recombination involving Shockley-Read centers in the GaAs spacers and bimolecular recombination via quantum-size states of InGaAs QWRs or QDs.
authors.affiliation: Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv, 01601, Ukraine.
authors.forename: Serhiy V
authors.initials: SV
authors.lastname: Kondratenko
authors.affiliation: Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv, 01601, Ukraine. iliashsviatoslav@gmail.com.
authors.forename: Sviatoslav A
authors.initials: SA
authors.lastname: Iliash
authors.affiliation: Department of Physics, Taras Shevchenko National University of Kyiv, 64 Volodymyrs'ka St., Kyiv, 01601, Ukraine.
authors.forename: Oleg V
authors.initials: OV
authors.lastname: Vakulenko
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Mourad
authors.initials: M
authors.lastname: Benamara
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.|Instituto de Fisica de São Carlos, Universidade de São Paulo, CP. 369, São Carlos, SP, 13560-970, Brazil.
authors.forename: Euclydes
authors.initials: E
authors.lastname: Marega
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo
keywords: InAs/InGaAs; Nanostructure; Photoconductivity recombination; Photoluminescence; Quantum dot chain; Quantum-size state; Semiconductor