title: Ion Sensitive Transparent-Gate Transistor for Visible Cell Sensing.
abstract: In this study, we developed an ion-sensitive transparent-gate transistor (IS-TGT) for visible cell sensing. The gate sensing surface of the IS-TGT is transparent in a solution because a transparent amorphous oxide semiconductor composed of amorphous In-Ga-Zn-oxide (a-IGZO) with a thin SiO2film gate that includes an indium tin oxide (ITO) film as the source and drain electrodes is utilized. The pH response of the IS-TGT was found to be about 56 mV/pH, indicating approximately Nernstian response. Moreover, the potential signals of the IS-TGT for sodium and potassium ions, which are usually included in biological environments, were evaluated. The optical and electrical properties of the IS-TGT enable cell functions to be monitored simultaneously with microscopic observation and electrical measurement. A platform based on the IS-TGT can be used as a simple and cost-effective plate-cell-sensing system based on thin-film fabrication technology in the research field of life science.
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Toshiya
authors.identifier: 0000-0002-5153-2555
authors.initials: T
authors.lastname: Sakata
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Kotaro
authors.initials: K
authors.lastname: Nishimura
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Yuuya
authors.initials: Y
authors.lastname: Miyazawa
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Akiko
authors.initials: A
authors.lastname: Saito
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Hiroyuki
authors.initials: H
authors.lastname: Abe
authors.affiliation: Department of Materials Engineering, School of Engineering, The University of Tokyo , 7-3-1 Hongo, Bunkyo-ku, Tokyo, Japan 113-8656.
authors.forename: Taira
authors.initials: T
authors.lastname: Kajisa
mesh_terms: D004566:Electrodes; D005708:Gallium / Q000737:chemistry; D006367:HeLa Cells; D006801:Humans; D006863:Hydrogen-Ion Concentration; D007204:Indium / Q000737:chemistry; D007477:Ions / Q000737:chemistry; D010087:Oxides / Q000737:chemistry; D010316:Particle Size; D011188:Potassium / Q000737:chemistry*; D012964:Sodium / Q000737:chemistry*; D013499:Surface Properties; D017971:Tin Compounds / Q000737:chemistry; D014173:Transistors, Electronic; D014407:Tumor Cells, Cultured; D015032:Zinc / Q000737:chemistry
chemical_list: D007477:Ions; D010087:Oxides; D017971:Tin Compounds; D007204:Indium; C109984:indium tin oxide; D012964:Sodium; D005708:Gallium; D015032:Zinc; D011188:Potassium