title: In-situ thermal annealing of on-membrane silicon-on-insulator semiconductor-based devices after high gamma dose irradiation.
abstract: In this paper, we investigate the recovery of some semiconductor-based components, such as N/P-type field-effect transistors (FETs) and a complementary metal-oxide-semiconductor (CMOS) inverter, after being exposed to a high total dose of gamma ray radiation. The employed method consists mainly of a rapid, low power and in situ annealing mitigation technique by silicon-on-insulator micro-hotplates. Due to the ionizing effect of the gamma irradiation, the threshold voltages showed an average shift of -580 mV for N-channel transistors, and -360 mV for P-MOSFETs. A 4 min double-cycle annealing of components with a heater temperature up to 465 °C, corresponding to a maximum power of 38 mW, ensured partial recovery but was not sufficient for full recovery. The degradation was completely recovered after the use of a built-in high temperature annealing process, up to 975 °C for 8 min corresponding to a maximum power of 112 mW, which restored the normal operating characteristics for all devices after their irradiation.
authors.affiliation: Institute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, Place du Levant, 3, 1348 Louvain-la-Neuve, Belgium. METS Research Unit, National Engineering School of Sfax, University of Sfax, Rte Soukra Km 4.5, Sfax 3038, Tunisia.
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authors.lastname: Amor
authors.forename: N
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authors.lastname: André
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authors.lastname: Kilchytska
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authors.initials: F
authors.lastname: Tounsi
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authors.lastname: Mezghani
authors.forename: P
authors.initials: P
authors.lastname: Gérard
authors.forename: Z
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authors.lastname: Ali
authors.forename: F
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authors.lastname: Udrea
authors.forename: D
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authors.lastname: Flandre
authors.forename: L A
authors.initials: LA
authors.lastname: Francis