title: Diameter Tuning ofβ-Ga2O3Nanowires Using Chemical Vapor Deposition Technique.
abstract: Diameter tuning of [Formula: see text]-Ga2O3nanowires using chemical vapor deposition technique have been investigated under various experimental conditions. Diameter of root grown [Formula: see text]-Ga2O3nanowires having monoclinic crystal structure is tuned by varying separation distance between metal source and substrate. Effect of gas flow rate and mixer ratio on the morphology and diameter of nanowires has been studied. Nanowire diameter depends on growth temperature, and it is independent of catalyst nanoparticle size at higher growth temperature (850-900 °C) as compared to lower growth temperature (800 °C). These nanowires show changes in structural strain value with change in diameter. Band-gap of nanowires increases with decrease in the diameter.
authors.affiliation: Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India. mukeshjihrnp@gmail.com.|Nanoscale Research Facilities, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India. mukeshjihrnp@gmail.com.
authors.forename: Mukesh
authors.initials: M
authors.lastname: Kumar
authors.affiliation: Nanoscale Research Facilities, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.|Centre for Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.
authors.forename: Vikram
authors.initials: V
authors.lastname: Kumar
authors.affiliation: Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.|Nanoscale Research Facilities, Indian Institute of Technology Delhi, Hauz Khas, New Delhi, 110016, India.
authors.forename: R
authors.initials: R
authors.lastname: Singh
keywords: Band-gap; Chemical vapor deposition; Diameter; Gallium oxide; Nanowire