Ag-Incorporated Organic-Inorganic Perovskite Films and Planar Heterojunction Solar Cells.
Controlled doping for adjustable material polarity and charge carrier concentration is the basis of semiconductor materials and devices, and it is much more difficult to achieve in ionic semiconductors (e.g., ZnO and GaN) than in covalent semiconductors (e.g., Si and Ge), due to the high intrinsic defect density in ionic semiconductors. The organic-inorganic perovskite material, which is frenetically being researched for applications in solar cells and beyond, is also an ionic semiconductor. Here we present the Ag-incorporated organic-inorganic perovskite films and planar heterojunction solar cells. Partial substitution of Pb2+by Ag+leads to improved film morphology, crystallinity, and carrier dynamics as well as shifted Fermi level and reduced electron concentration. Consequently, in planar heterojunction photovoltaic devices with inverted stacking structure, Ag incorporation results in an enhancement of the power conversion efficiency from 16.0% to 18.4% in MAPbI3based devices and from 11.2% to 15.4% in MAPbI3-xClxbased devices. Our work implies that Ag incorporation is a feasible route to adjust carrier concentrations in solution-processed perovskite materials in spite of the high concentration of intrinsic defects.
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.|Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States.
Qi
0000-0001-7721-8452
Q
Chen
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Lei
L
Chen
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Fengye
F
Ye
Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States.
Ting
T
Zhao
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Feng
F
Tang
Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States.
Adharsh
A
Rajagopal
Shanghai Synchrotron Radiation Facility, Shanghai Institute of Applied Physics, Chinese Academy of Sciences , Shanghai 201204, China.
Zheng
0000-0002-0132-0319
Z
Jiang
Shenlong
S
Jiang
Department of Materials Science and Engineering, University of Washington , Seattle, Washington 98195, United States.
Alex K-Y
AK
Jen
Yi
0000-0002-1416-5557
Y
Xie
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Jinhua
J
Cai
i-Lab, CAS Center for Excellence in Nanoscience, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.|CAS Key Laboratory of Nano-Bio Interface, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences , Suzhou 215123, China.
Liwei
L
Chen
Perovskite polarity; carrier density; equivalent circuit model; metal incorporation; planar heterojunction perovskite solar cell