Site-Controlled Growth of Monolithic InGaAs/InP Quantum Well Nanopillar Lasers on Silicon.
In this Letter, we report the site-controlled growth of InP nanolasers on a silicon substrate with patterned SiO2nanomasks by low-temperature metal-organic chemical vapor deposition, compatible with silicon complementary metal-oxide-semiconductor (CMOS) post-processing. A two-step growth procedure is presented to achieve smooth wurtzite faceting of vertical nanopillars. By incorporating InGaAs multiquantum wells, the nanopillar emission can be tuned over a wide spectral range. Enhanced quality factors of the intrinsic InP nanopillar cavities promote lasing at 0.87 and 1.21 μm, located within two important optical telecommunication bands. This is the first demonstration of a site-controlled III-V nanolaser monolithically integrated on silicon with a silicon-transparent emission wavelength, paving the way for energy-efficient on-chip optical links at typical telecommunication wavelengths.
Department of Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Fabian
0000-0001-6637-4564
F
Schuster
Department of Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Jonas
J
Kapraun
Department of Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Gilliard N
0000-0002-5176-3812
GN
Malheiros-Silveira
Department of Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Saniya
0000-0002-7760-6604
S
Deshpande
Department of Electrical Engineering and Computer Sciences, University of California , Berkeley, California 94720, United States.
Connie J
0000-0002-5341-6267
CJ
Chang-Hasnain
InGaAs; InP; Site-selective growth; laser; nanopillars; quantum well