RRAM-based parallel computing architecture using k-nearest neighbor classification for pattern recognition.
Resistive switching memory (RRAM) is considered as one of the most promising devices for parallel computing solutions that may overcome the von Neumann bottleneck of today's electronic systems. However, the existing RRAM-based parallel computing architectures suffer from practical problems such as device variations and extra computing circuits. In this work, we propose a novel parallel computing architecture for pattern recognition by implementing k-nearest neighbor classification on metal-oxide RRAM crossbar arrays. Metal-oxide RRAM with gradual RESET behaviors is chosen as both the storage and computing components. The proposed architecture is tested by the MNIST database. High speed (~100 ns per example) and high recognition accuracy (97.05%) are obtained. The influence of several non-ideal device properties is also discussed, and it turns out that the proposed architecture shows great tolerance to device variations. This work paves a new way to achieve RRAM-based parallel computing hardware systems with high performance.
Institute of Microelectronics, Peking University, Beijing 100871, China.
Yuning
Y
Jiang
Institute of Microelectronics, Peking University, Beijing 100871, China.
Jinfeng
J
Kang
The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China.
Xinan
X
Wang