Real-Time Observation of the Electrode-Size-Dependent Evolution Dynamics of the Conducting Filaments in a SiO2Layer.
Conducting bridge random access memory (CBRAM) is one of the most promising candidates for future nonvolatile memories. It is important to understand the scalability and retention of CBRAM cells to realize better memory performance. Here, we directly observe the switching dynamics of Cu tip/SiO2/W cells with various active electrode sizes using in situ transmission electron microscopy. Conducting filaments (CFs) grow from the active electrode (Cu tip) to inert electrode (W) during the SET operations. The size of the Cu tip affects the electric-field distribution, the amount of the cation injection into electrolyte, and the dimension of the CF. This study provides helpful understanding on the relationship between power consumption and retention of CBRAM cells. We also construct a theoretical model to explain the electrode-size-dependent CF growth in SET operations, showing good agreement with our experimental results.
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.|Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
Fang
F
Yuan
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Zhi
Z
Zhang
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Chunru
C
Liu
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Feichi
F
Zhou
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Hei Man
HM
Yau
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Wei
W
Lu
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Xiaoyan
X
Qiu
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.|Department of Electrical Engineering and Stanford SystemX Alliance, Stanford University , Stanford, California 94305, United States.
H-S Philip
HP
Wong
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Jiyan
J
Dai
Department of Applied Physics, The Hong Kong Polytechnic University , Hung Hom, Kowloon, Hong Kong, People's Republic of China.
Yang
0000-0002-8943-0861
Y
Chai
conducting bridge random access memory; conducting filament; in situ transmission electron microscopy; nonvolatile memory; resistive switching memory