Re-construction layer effect of LiNi0.8Co0.15Mn0.05O2with solvent evaporation process.
The solvent evaporation method on the structural changes and surface chemistry of the cathode and the effect of electrochemical performance of Li1.0Ni0.8Co0.15Mn0.05O2(NCM) has been investigated. After dissolving of Li residuals using minimum content of solvent in order to minimize the damage of pristine material and the evaporation time, the solvent was evaporated without filtering and remaining powder was re-heated at 700 °C in oxygen environment. Two kinds of solvent, de-ionized water and diluted nitric acid, were used as a solvent. The almost 40% of Li residuals were removed using solvent evaporation method. The NCM sample after solvent evaporation process exhibited an increase in the initial capacity (214.3 mAh/g) compared to the pristine sample (207.4 mAh/g) at 0.1C because of enhancement of electric conductivity caused by decline of Li residuals. The capacity retention of NCM sample after solvent evaporation process (96.0% at the 50th cycle) was also improved compared to that of the pristine NCM sample (90.6% at the 50th cycle). The uniform Li residual layer after solvent treated and heat treatment acted like a coating layer, leading to enhance the cycle performance. The NCM sample using diluted nitric acid showed better performance than that using de-ionized water.
Energy Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Kwangjin
K
Park
Energy Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Jun-Ho
JH
Park
Energy Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Suk-Gi
SG
Hong
Energy Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Byungjin
B
Choi
Platform Technology Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Sung
S
Heo
CAE Group, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Seung-Woo
SW
Seo
CAE Group, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Kyoungmin
K
Min
Energy Lab, Samsung Advanced Institute of Technology (SAIT), Electronic Materials Research Complex, 130 Samsung-ro, Gyeonggi-do, 16678, Republic of Korea.
Jin-Hwan
JH
Park