Investigation of chemical vapour deposition MoS2field effect transistors on SiO2and ZrO2substrates.
With the development of portable electronics, higher performance transistors are required to reduce the form factor and improve the performance of the devices. The key issue relies on developing transistors with outstanding electrical properties and low energy consumption at small scale. Here we demonstrate chemical vapor deposition (CVD) grown MoS2transistors with a high on/off ratio using ZrO2as a gate dielectric. Using 10 nm thick ZrO2, the transistor has an on/off ratio of 108, a sub-threshold swing of 0.1 V/dec, and a mobility of 64.66 cm2V-1s-1. Compared to the MoS2devices grown on 300 nm SiO2, the electrical performance demonstrates an all round improvement, which indicates the high crystalline quality of MoS2/ZrO2. Owing to the high-k ZrO2dielectrics, the MoS2transistor has a high on/off ratio, a low operating voltage, and good channel modulation capability which ensures that MoS2is a good candidate for low power electronics.
Sun Yat-sen University Carnegie Mellon University Joint Institute of Engineering, School of Electronic and Information Technology, Sun Yat-sen University, Guangzhou, People's Republic of China. State Key Lab on Advanced Displays and Optoelectronics, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong.
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Zhaojun
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