Semiconductor meta-surface based perfect light absorber.
We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.
Jiangxi Key Laboratory of Nanomaterials and Sensors, College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022, Jiangxi, People's Republic of China.
Guiqiang
G
Liu
Yiyou
Y
Nie
Guolan
G
Fu
Xiaoshan
X
Liu
Yi
Y
Liu
Li
L
Tang
Zhengqi
Z
Liu