Rectifying Characteristics and Semiconductor-Metal Transition Induced by Interfacial Potential in the Mn3CuN/n-Si Intermetallic Heterojunction.
The Mn3CuN/n-Si heterojunction device is first designed in the antiperovskite compound, and excellent rectifying characteristics are obtained. The rectification ratio (RR) reaches as large as 38.9 at 10 V, and the open-circuit voltage Vocof 1.13 V is observed under temperature of 410 K. The rectifying behaviors can be well described by the Shockley equation, indicating the existence of a Schottky diode. Simultaneously, a particular semiconductor-metal transition (SMT) behavior at 250 K is also observed in the Mn3CuN/n-Si heterojunction. The interfacial band bending induced inversion layer, which is clarified by the interfacial schematic band diagrams, is believed to be responsible for the SMT and rectifying effects. This study can develop a new class of materials for heterojunction, rectifying devices, and SMT behaviors.
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Kewen
K
Shi
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Cong
C
Wang
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Ying
Y
Sun
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Lei
http://orcid.org/0000-0003-3597-0974
L
Wang
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Sihao
S
Deng
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Pengwei
P
Hu
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Huiqing
H
Lu
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Weichang
W
Hao
Center for Condensed Matter and Materials Physics, Department of Physics, Beihang University , Beijing 100191, People's Republic of China.
Tianmin
T
Wang
State Key Laboratory of Information Photonics and Optical Telecommunications, School of Science, Beijing University of Posts and Telecommunications , Beijing 100876, People's Republic of China.
Weihua
http://orcid.org/0000-0002-6191-1655
W
Tang
antiperovskite compound; interface; intermetallic heterojunction device; inversion layer; rectifying characteristics; semiconductor−metal transition