Energy harvesting efficiency in GaN nanowire-based nanogenerators: the critical influence of the Schottky nanocontact.
The performances of 1D-nanostructure based nanogenerators are governed by the ability of nanostructures to efficiently convert mechanical deformation into electrical energy, and by the efficiency with which this piezo-generated energy is harvested. In this paper, we highlight the crucial influence of the GaN nanowire-metal Schottky nanocontact on the energy harvesting efficiency. Three different metals, p-type doped diamond, PtSi and Pt/Ir, have been investigated. By using an atomic force microscope equipped with a Resiscope module, we demonstrate that the harvesting of piezo-generated energy is up to 2.4 times more efficient using a platinum-based Schottky nanocontact compared to a doped diamond-based nanocontact. In light of Schottky contact characteristics, we evidence that the conventional description of the Schottky diode cannot be applied. The contact is governed by its nanometer size. This specific behaviour induces notably a lowering of the Schottky barrier height, which gives rise to an enhanced conduction. We especially demonstrate that this effective thinning is directly correlated with the improvement of the energy harvesting efficiency, which is much pronounced for Pt-based Schottky diodes. These results constitute a building block to the overall improvement of NW-based nanogenerator devices.
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Nicolas
N
Jamond
Laboratoire de Génie Electrique de Paris, UMR CNRS-Supélec 8507, Universités Pierre et Marie Curie et Paris-Sud, 11 rue Joliot-Curie, 91192 Gif Sur Yvette, France.
Pascal
P
Chrétien
Observatoire de Paris, LERMA, UMR 8112, avenue de l'Observatoire, 75014 Paris, France.
Lina
L
Gatilova
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Elisabeth
E
Galopin
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Laurent
L
Travers
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Jean-Christophe
JC
Harmand
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Frank
F
Glas
Laboratoire de Génie Electrique de Paris, UMR CNRS-Supélec 8507, Universités Pierre et Marie Curie et Paris-Sud, 11 rue Joliot-Curie, 91192 Gif Sur Yvette, France.
Frédéric
F
Houzé
Centre des Nanosciences et des Nanotechnologies, site-Marcoussis, Université Paris-Saclay, CNRS-C2N-UMR9001, Route de Nozay, 91460 Marcoussis, France. Noelle.gogneau@c2n.upsaclay.fr.
Noëlle
http://orcid.org/0000-0002-4881-1617
N
Gogneau