Atomic Scale Dynamics of Contact Formation in the Cross-Section of InGaAs Nanowire Channels.
Alloyed and compound contacts between metal and semiconductor transistor channels enable self-aligned gate processes which play a significant role in transistor scaling. At nanoscale dimensions and for nanowire channels, prior experiments focused on reactions along the channel length, but the early stage of reaction in their cross sections remains unknown. Here, we report on the dynamics of the solid-state reaction between metal (Ni) and semiconductor (In0.53Ga0.47As), along the cross-section of nanowires that are 15 nm in width. Unlike planar structures where crystalline nickelide readily forms at conventional, low alloying temperatures, nanowires exhibit a solid-state amorphization step that can undergo a crystal regrowth step at elevated temperatures. In this study, we capture the layer-by-layer reaction mechanism and growth rate anisotropy using in situ transmission electron microscopy (TEM). Our kinetic model depicts this new, in-plane contact formation which could pave the way for engineered nanoscale transistors.
Renjie
0000-0002-3145-6882
R
Chen
Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
Katherine L
KL
Jungjohann
Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
William M
WM
Mook
Center for Integrated Nanotechnologies, Sandia National Laboratories , Albuquerque, New Mexico 87185, United States.
John
J
Nogan
Shadi A
0000-0002-1756-1774
SA
Dayeh
In situ TEM; InGaAs; amorphization; nanowire; nickelide; recrystallization