Highly uniform wafer-scale synthesis of α-MoO3by plasma enhanced chemical vapor deposition.
Molybdenum oxide (MoO3) has gained immense attention because of its high electron mobility, wide band gap, and excellent optical and catalytic properties. However, the synthesis of uniform and large-area MoO3is challenging. Here, we report the synthesis of wafer-scale α-MoO3by plasma oxidation of Mo deposited on Si/SiO2. Mo was oxidized by O2plasma in a plasma enhanced chemical vapor deposition (PECVD) system at 150 °C. It was found that the synthesized α-MoO3had a highly uniform crystalline structure. For the as-synthesized α-MoO3sensor, we observed a current change when the relative humidity was increased from 11% to 95%. The sensor was exposed to different humidity levels with fast recovery time of about 8 s. Hence this feasibility study shows that MoO3synthesized at low temperature can be utilized for gas sensing applications by adopting flexible device technology.
SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon, Republic of Korea.
Hyeong-U
HU
Kim
Juhyun
J
Son
Atul
A
Kulkarni
Chisung
C
Ahn
Ki Seok
KS
Kim
Dongjoo
D
Shin
Geun Yong
GY
Yeom
Taesung
T
Kim