Ultrathin (Bi1-xSbx)2Se3Field Effect Transistor with Large ON/OFF Ratio.
Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1-xSbx)2Se3ultrathin films were fabricated on SrTiO3substrate, where large resistance changes of ∼25 000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.
Yu-Hung
YH
Liu
Cheong-Wei
http://orcid.org/0000-0002-8933-2153
CW
Chong
Chun-Ming
CM
FanChiang
Taiwan Consortium of Emergent Crystalline Materials (TCECM), Ministry of Science and Technology, Taipei 10622, Taiwan.
Jung-Chun-Andrew
JC
Huang
Research Center for Applied Sciences, Academia Sinica , Taipei 11529, Taiwan.
Hsieh-Cheng
HC
Han
School of Electronic Science and Applied Physics, HeFei University of Technology , Hefei, Anhui 230009, China.
Zhongjun
Z
Li
School of Electronic Science and Applied Physics, HeFei University of Technology , Hefei, Anhui 230009, China.
Huaili
H
Qiu
Yi-Chang
YC
Li
Chuan-Pu
CP
Liu
(Bi1−xSbx)2Se3; SrTiO3; field effect transistor; topological insulator; ultrathin