title: Meissner effect measurement of single indium particle using a customized on-chip nano-scale superconducting quantum interference device system.
abstract: As many emergent phenomena of superconductivity appear on a smaller scale and at lower dimension, commercial magnetic property measurement systems (MPMSs) no longer provide the sensitivity necessary to study the Meissner effect of small superconductors. The nano-scale superconducting quantum interference device (nano-SQUID) is considered one of the most sensitive magnetic sensors for the magnetic characterization of mesoscopic or microscopic samples. Here, we develop a customized on-chip nano-SQUID measurement system based on a pulsed current biasing method. The noise performance of our system is approximately 4.6 × 10-17emu/Hz1/2, representing an improvement of 9 orders of magnitude compared with that of a commercial MPMS (~10-8emu/Hz1/2). Furthermore, we demonstrate the measurement of the Meissner effect of a single indium (In) particle (of 47 μm in diameter) using our on-chip nano-SQUID system. The system enables the observation of the prompt superconducting transition of the Meissner effect of a single In particle, thereby providing more accurate characterization of the critical field Hcand temperature Tc. In addition, the retrapping field Hreas a function of temperature T of single In particle shows disparate behavior from that of a large ensemble.
authors.affiliation: CAS Center for Excellence in Superconducting Electronics(CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Long
authors.initials: L
authors.lastname: Wu
authors.affiliation: CAS Center for Excellence in Superconducting Electronics(CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Lei
authors.initials: L
authors.lastname: Chen
authors.affiliation: CAS Center for Excellence in Superconducting Electronics(CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Wang
authors.affiliation: CAS Center for Excellence in Superconducting Electronics(CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.
authors.forename: Xiaoyu
authors.initials: X
authors.lastname: Liu
authors.affiliation: CAS Center for Excellence in Superconducting Electronics(CENSE), State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology (SIMIT), Chinese Academy of Sciences (CAS), Shanghai 200050, China.|University of Chinese Academy of Sciences, Beijing 100049, China.|School of Physical Science and Technology, Shanghai Tech University, Shanghai 200031, China.
authors.forename: Zhen
authors.initials: Z
authors.lastname: Wang