title: A Solution-Processed High-Performance Phototransistor based on a Perovskite Composite with Chemically Modified Graphenes.
abstract: Phototransistors with a structure of a nitrogen-doped graphene quantum dots (NGQDs)-perovskite composite layer and a mildly reduced graphene oxide (mrGO) layer are fabricated through a solution-processing method. This hybrid phototransistor exhibits broad detection range (from 365 to 940 nm), high photoresponsivity (1.92 × 104A W-1), and rapid response to light on-off (≈10 ms). NGQDs offer an effective and fast path for electron transfer from the perovskite to the mrGO, resulting in the improvement of photocurrent and photoswitching characteristics. The high photoresponsivity can also be ascribed to a photogating effect in the device. In addition, the phototransistor shows good stability with poly(methyl methacrylate) encapsulation, and can maintain 85% of its initial performance for 20 d in ambient air.
authors.affiliation: Department of Chemistry, Tsinghua University, Beijing, 100084, China.|CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.|University of Chinese Academy of Sciences, Beijing, 100049, China.
authors.forename: Liu
authors.initials: L
authors.lastname: Qian
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Sun
authors.affiliation: Department of Chemistry, Tsinghua University, Beijing, 100084, China.
authors.forename: Mingmao
authors.initials: M
authors.lastname: Wu
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology (TNList), Institute of Microelectronics, Tsinghua University, Beijing, 100084, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Xie
authors.affiliation: CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China.
authors.forename: Liming
authors.initials: L
authors.lastname: Ding
authors.affiliation: Department of Chemistry, Tsinghua University, Beijing, 100084, China.
authors.forename: Gaoquan
authors.initials: G
authors.lastname: Shi
keywords: graphene oxide; perovskites; phototransistors; quantum dots