title: Excitation of hypersonic acoustic waves in diamond-based piezoelectric layered structure on the microwave frequencies up to 20GHz.
abstract: First ultrahigh frequency (UHF) investigation of quality factor Q for the piezoelectric layered structure «Al/(001)AlN/Mo/(100) diamond» has been executed in a broad frequency band from 1 up to 20GHz. The record-breaking Q·f quality parameter up to 2.7·1014Hz has been obtained close to 20GHz. Frequency dependence of the form factor m correlated with quality factor has been analyzed by means of computer simulation, and non-monotonic frequency dependence can be explained by proper features of thin-film piezoelectric transducer (TFPT). Excluding the minimal Q magnitudes measured at the frequency points associated with minimal TFPT effectiveness, one can prove a rule of Qf∼f observed for diamond on the frequencies above 1GHz and defined by Landau-Rumer's acoustic attenuation mechanism. Synthetic IIa-type diamond single crystal as a substrate material for High-overtone Bulk Acoustic Resonator (HBAR) possesses some excellent acoustic properties in a wide microwave band and can be successfully applied for design of acoustoelectronic devices, especially the ones operating at a far UHF band.
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation; Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russian Federation. Electronic address: bpsorokin2@rambler.ru.
authors.forename: B P
authors.initials: BP
authors.lastname: Sorokin
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation.
authors.forename: G M
authors.initials: GM
authors.lastname: Kvashnin
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation; Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russian Federation.
authors.forename: A S
authors.initials: AS
authors.lastname: Novoselov
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation.
authors.forename: V S
authors.initials: VS
authors.lastname: Bormashov
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation.
authors.forename: A V
authors.initials: AV
authors.lastname: Golovanov
authors.affiliation: Siberian Federal University, 660041 Krasnoyarsk, Russian Federation.
authors.forename: S I
authors.initials: SI
authors.lastname: Burkov
authors.affiliation: Technological Institute for Superhard and Novel Carbon Materials, 108840 Moscow, Troitsk, Russian Federation; Moscow Institute of Physics and Technology, 141700 Dolgoprudny, Russian Federation.
authors.forename: V D
authors.initials: VD
authors.lastname: Blank
keywords: Aluminum nitride; Diamond; HBAR; Piezoelectric layered structure; Quality factor; Quality parameter; UHF acoustic attenuation