title: Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates.
abstract: Nanoselective area growth (NSAG) by metal organic vapor phase epitaxy of high-quality InGaN nanopyramids on GaN-coated ZnO/c-sapphire is reported. Nanopyramids grown on epitaxial low-temperature GaN-on-ZnO are uniform and appear to be single crystalline, as well as free of dislocations and V-pits. They are also indium-rich (with homogeneous 22% indium incorporation) and relatively thick (100 nm). These properties make them comparable to nanostructures grown on GaN and AlN/Si templates, in terms of crystallinity, quality, morphology, chemical composition and thickness. Moreover, the ability to selectively etch away the ZnO allows for the potential lift-off and transfer of the InGaN/GaN nanopyramids onto alternative substrates, e.g. cheaper and/or flexible. This technology offers an attractive alternative to NSAG on AlN/Si as a platform for the fabrication of high quality, thick and indium-rich InGaN monocrystals suitable for cheap, flexible and tunable light-emitting diodes.
authors.affiliation: Georgia Institute of Technology, School of Electrical and Computer Engineering, Atlanta, GA 30332, United States of America. CNRS, GT UMI 2958, Georgia Tech Lorraine, 2 Rue Marconi, F-57070 Metz, France.
authors.forename: Renaud
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authors.forename: Youssef El
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authors.lastname: Sundaram
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authors.lastname: Sandana
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authors.lastname: Bove
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authors.lastname: McClintock
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authors.lastname: Razeghi
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authors.lastname: Ferguson
authors.forename: Jean-Paul
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authors.lastname: Salvestrini
authors.forename: Abdallah
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authors.lastname: Ougazzaden