title: Control of Multilevel Resistance in Vanadium Dioxide by Electric Field Using Hybrid Dielectrics.
abstract: We investigate the effect of electric field on VO2back-gated field effect transistor (FET) devices. Using hybrid dielectric layers, we demonstrate the highest resistance modulation on the order of 102in VO2at a positive gate bias of 80 V (1.6 MV/cm). VO2FET devices are prepared on SiO2substrates of different thicknesses (100-300 nm) and hybrid dielectric layers of Al2O3/SiO2(500 nm). For thicknesses less than 300 nm, no electric-field effects are observed, whereas for a 300 nm thickness, a small decrease in resistance is observed under a 0.2 MV/cm electric field. Under the electrostatic effect, the carrier concentration increases in VO2devices, decreasing the resistance and the transition temperature from 66.75 to 64 °C. The leakage analysis shows that the interface quality of VO2films on hybrid dielectric layers can be further improved. These studies suggest a multilevel fast resistance switching with the electric field and give an insight into the gate-source leakage current, which limits the phase transition in VO2in an electric field.
authors.affiliation: Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea.
authors.forename: Kaleem
authors.initials: K
authors.lastname: Abbas
authors.affiliation: Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea.
authors.forename: Jaeseok
authors.initials: J
authors.lastname: Hwang
authors.affiliation: Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea.
authors.forename: Garam
authors.initials: G
authors.lastname: Bae
authors.affiliation: Department of Robotics Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST) , 711-873 Daegu, Republic of Korea.
authors.forename: Hongsoo
authors.initials: H
authors.lastname: Choi
authors.affiliation: Department of Physics and Energy Science, Sungkyunkwan University , 2066, Seobu-ro, Jangan-gu, Suwon 16419, Gyeoggi-do, Republic of Korea.
authors.forename: Dae Joon
authors.identifier: http://orcid.org/0000-0002-4030-4071
authors.initials: DJ
authors.lastname: Kang
keywords: Mott transistor; electric field; hybrid dielectric; insulator−metal transition; vanadium dioxide