title: Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different Thickness.
abstract: Photoluminescence (PL) is investigated as a function of the excitation intensity and temperature for lattice-matched InGaAs/InAlAs quantum well (QW) structures with well thicknesses of 7 and 15 nm, respectively. At low temperature, interface fluctuations result in the 7-nm QW PL exhibiting a blueshift of 15 meV, a narrowing of the linewidth (full width at half maximum, FWHM) from 20.3 to 10 meV, and a clear transition of the spectral profile with the laser excitation intensity increasing four orders in magnitude. The 7-nm QW PL also has a larger blueshift and FWHM variation than the 15-nm QW as the temperature increases from 10 to ~50 K. Finally, simulations of this system which correlate with the experimental observations indicate that a thin QW must be more affected by interface fluctuations and their resulting potential fluctuations than a thick QW. This work provides useful information on guiding the growth to achieve optimized InGaAs/InAlAs QWs for applications with different QW thicknesses.
authors.affiliation: School of Science, Beijing Jiaotong University, Beijing, 100044, People's Republic of China. hbuwangying@126.com.
authors.forename: Ying
authors.initials: Y
authors.lastname: Wang
authors.affiliation: School of Science, Beijing Jiaotong University, Beijing, 100044, People's Republic of China.
authors.forename: Xinzhi
authors.initials: X
authors.lastname: Sheng
authors.affiliation: College of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China.
authors.forename: Qinglin
authors.initials: Q
authors.lastname: Guo
authors.affiliation: College of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China.
authors.forename: Xiaoli
authors.initials: X
authors.lastname: Li
authors.affiliation: College of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China.
authors.forename: Shufang
authors.initials: S
authors.lastname: Wang
authors.affiliation: College of Physics Science and Technology, Hebei University, Baoding, 071002, People's Republic of China.
authors.forename: Guangsheng
authors.initials: G
authors.lastname: Fu
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Yuriy I
authors.initials: YI
authors.lastname: Mazur
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Yurii
authors.initials: Y
authors.lastname: Maidaniuk
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Morgan E
authors.initials: ME
authors.lastname: Ware
authors.affiliation: Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR, 72701, USA.
authors.forename: Gregory J
authors.initials: GJ
authors.lastname: Salamo
authors.affiliation: California NanoSystem Institute, University of California, Los Angeles, CA, 90095, USA. liangbaolai@gmail.com.
authors.forename: Baolai
authors.identifier: http://orcid.org/0000-0002-2192-9340
authors.initials: B
authors.lastname: Liang
authors.affiliation: California NanoSystem Institute, University of California, Los Angeles, CA, 90095, USA.
authors.forename: Diana L
authors.initials: DL
authors.lastname: Huffaker
keywords: Interface; Nanostructures; Photoluminescence; Quantum well; Semiconductor