title: Structural Properties Characterized by the Film Thickness and Annealing Temperature for La2O3Films Grown by Atomic Layer Deposition.
abstract: La2O3films were grown on Si substrates by atomic layer deposition technique with different thickness. Crystallization characteristics of the La2O3films were analyzed by grazing incidence X-ray diffraction after post-deposition rapid thermal annealing treatments at several annealing temperatures. It was found that the crystallization behaviors of the La2O3films are affected by the film thickness and annealing temperatures as a relationship with the diffusion of Si substrate. Compared with the amorphous La2O3films, the crystallized films were observed to be more unstable due to the hygroscopicity of La2O3. Besides, the impacts of crystallization characteristics on the bandgap and refractive index of the La2O3films were also investigated by X-ray photoelectron spectroscopy and spectroscopic ellipsometry, respectively.
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Xing
authors.initials: X
authors.lastname: Wang
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China. hxliu@mail.xidian.edu.cn.
authors.forename: Hongxia
authors.initials: H
authors.lastname: Liu
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Lu
authors.initials: L
authors.lastname: Zhao
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Chenxi
authors.initials: C
authors.lastname: Fei
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Xingyao
authors.initials: X
authors.lastname: Feng
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Shupeng
authors.initials: S
authors.lastname: Chen
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Yongte
authors.initials: Y
authors.lastname: Wang
keywords: ALD; Bandgap; Crystallization; Diffusion; La2O3; Refractive index