title: Direct mapping and characterization of dry etch damage-induced PN junction for long-wavelength HgCdTe infrared detector arrays.
abstract: Mercury cadmium telluride is the standard material to fabricate high-performance infrared focal plane array (FPA) detectors. However, etch-induced damage is a serious obstacle for realizing highly uniform and damage-free FPA detectors. In this Letter, the high signal-to-noise ratio and high spatial resolution scanning photocurrent microscopy (SPCM) is used to characterize the dry etch-induced inversion layer of vacancy-doped p-type Hg1-xCdxTe (x=0.22) material under different etching temperatures. It is found that the peak-to-peak magnitude of the SPCM profile decreases with a decrease in etching temperature, showing direct proof of controlling dry etch-induced type conversion. Our work paves the way toward seeking optimal etching processes in large-scale infrared FPAs.
authors.forename: Yantao
authors.initials: Y
authors.lastname: Li
authors.forename: Weida
authors.initials: W
authors.lastname: Hu
authors.forename: Zhenhua
authors.initials: Z
authors.lastname: Ye
authors.forename: Yiyu
authors.initials: Y
authors.lastname: Chen
authors.forename: Xiaoshuang
authors.initials: X
authors.lastname: Chen
authors.forename: Wei
authors.initials: W
authors.lastname: Lu