title: Degradation of topological surface state by nonmagnetic S doping in SrxBi2Se3.
abstract: Research on possible topological superconductivity has grown rapidly over the past several years, from fundamental studies to the development of next generation technologies. Recently, it has been reported that the SrxBi2Se3exhibits superconductivity with topological surface state, making this compound a promising candidate for investigating possible topological superconductivity. However, whether or not the topological surface state is robust against impurities is not clear in this system. Here we report a detailed investigation on the lattice structure, electronic and magnetic properties, as well as the topological superconducting properties of SrxBi2Se3-ySysamples. It is found that the superconducting transition temperature keeps nearly unchanged in all samples, despite of a gradual decrease of the superconducting shielding volume fraction with increasing S doping content. Meanwhile, the Shubnikov-de Hass oscillation results of the SrxBi2Se3-ySysamples reveal that the topological surface states are destroyed in S doped samples, suggesting the topological character is degraded by nonmagnetic dopants.
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Hui
authors.initials: H
authors.lastname: Huang
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Juanjuan
authors.initials: J
authors.lastname: Gu
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Min
authors.initials: M
authors.lastname: Tan
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Qinglong
authors.initials: Q
authors.lastname: Wang
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Ping
authors.initials: P
authors.lastname: Ji
authors.affiliation: Department of Electronic Information and Electrical Engineering, Hefei University, Jinxiu Road 158, Hefei 230601, Peoples Republic of China.
authors.forename: Xueyou
authors.initials: X
authors.lastname: Hu