title: Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.
abstract: The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations.
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Giuseppe Carlo
authors.identifier: 0000-0002-3209-0632
authors.initials: GC
authors.lastname: Tettamanzi
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Samuel James
authors.initials: SJ
authors.lastname: Hile
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Matthew Gregory
authors.initials: MG
authors.lastname: House
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Martin
authors.initials: M
authors.lastname: Fuechsle
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Sven
authors.initials: S
authors.lastname: Rogge
authors.affiliation: School of Physics and Centre of Excellence for Quantum Computation and Communication Technology, UNSW Australia , Sydney, New South Wales 2052, Australia.
authors.forename: Michelle Y
authors.initials: MY
authors.lastname: Simmons
keywords: monolayer-doped electrodes; phosphorus; pulse spectroscopy; relaxation rates; silicon; single atom transistor