title: The Study of Electrical Properties for Multilayer La2O3/Al2O3Dielectric Stacks and LaAlO3Dielectric Film Deposited by ALD.
abstract: The capacitance and leakage current properties of multilayer La2O3/Al2O3dielectric stacks and LaAlO3dielectric film are investigated in this paper. A clear promotion of capacitance properties is observed for multilayer La2O3/Al2O3stacks after post-deposition annealing (PDA) at 800 °C compared with PDA at 600 °C, which indicated the recombination of defects and dangling bonds performs better at the high-k/Si substrate interface for a higher annealing temperature. For LaAlO3dielectric film, compared with multilayer La2O3/Al2O3dielectric stacks, a clear promotion of trapped charges density (Not) and a degradation of interface trap density (Dit) can be obtained simultaneously. In addition, a significant improvement about leakage current property is observed for LaAlO3dielectric film compared with multilayer La2O3/Al2O3stacks at the same annealing condition. We also noticed that a better breakdown behavior for multilayer La2O3/Al2O3stack is achieved after annealing at a higher temperature for its less defects.
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Xing-Yao
authors.initials: XY
authors.lastname: Feng
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China. hxliu@mail.xidian.edu.cn.
authors.forename: Hong-Xia
authors.initials: HX
authors.lastname: Liu
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Xing
authors.initials: X
authors.lastname: Wang
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Lu
authors.initials: L
authors.lastname: Zhao
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: Chen-Xi
authors.initials: CX
authors.lastname: Fei
authors.affiliation: Key Laboratory for Wide-Band Gap Semiconductor Materials and Devices of Education, School of Microelectronics, Xidian University, Xi'an, 710071, China.
authors.forename: He-Lei
authors.initials: HL
authors.lastname: Liu