title: Chemical and Bandgap Engineering in Monolayer Hexagonal Boron Nitride.
abstract: Monolayer hexagonal boron nitride (h-BN) possesses a wide bandgap of ~6 eV. Trimming down the bandgap is technically attractive, yet poses remarkable challenges in chemistry. One strategy is to topological reform the h-BN's hexagonal structure, which involves defects or grain boundaries (GBs) engineering in the basal plane. The other way is to invite foreign atoms, such as carbon, to forge bizarre hybrid structures like hetero-junctions or semiconducting h-BNC materials. Here we successfully developed a general chemical method to synthesize these different h-BN derivatives, showcasing how the chemical structure can be manipulated with or without a graphene precursor, and the bandgap be tuned to ~2 eV, only one third of the pristine one's.
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Kun
authors.initials: K
authors.lastname: Ba
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Jiang
authors.affiliation: The Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 20433, China.
authors.forename: Jingxin
authors.initials: J
authors.lastname: Cheng
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Jingxian
authors.initials: J
authors.lastname: Bao
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Ningning
authors.initials: N
authors.lastname: Xuan
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Yangye
authors.initials: Y
authors.lastname: Sun
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Bing
authors.initials: B
authors.lastname: Liu
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.
authors.forename: Aozhen
authors.initials: A
authors.lastname: Xie
authors.affiliation: The Department of Physics and State Key Laboratory of Surface Physics, Fudan University, Shanghai, 20433, China.
authors.forename: Shiwei
authors.initials: S
authors.lastname: Wu
authors.affiliation: The Department of Chemistry, Fudan University, Shanghai, 20433, China.|Department of Chemistry and Shanghai Key Laboratory of Molecular Catalysis and Innovative Materials, Fudan University, Shanghai 200433, P.R. China.
authors.forename: Zhengzong
authors.initials: Z
authors.lastname: Sun