title: A Complementary Metal Oxide Semiconductor Process-Compatible Ferroelectric Tunnel Junction.
abstract: In recent years, experimental demonstration of ferroelectric tunnel junctions (FTJ) based on perovskite tunnel barriers has been reported. However, integrating these perovskite materials into conventional silicon memory technology remains challenging due to their lack of compatibility with the complementary metal oxide semiconductor process (CMOS). This communication reports the fabrication of an FTJ based on a CMOS-compatible tunnel barrier Hf0.5Zr0.5O2(6 unit cells thick) on an equally CMOS-compatible TiN electrode. Analysis of the FTJ by grazing angle incidence X-ray diffraction confirmed the formation of the noncentrosymmetric orthorhombic phase (Pbc21, ferroelectric phase). The FTJ characterization is followed by the reconstruction of the electrostatic potential profile in the as-grown TiN/Hf0.5Zr0.5O2/Pt heterostructure. A direct tunneling current model across a trapezoidal barrier was used to correlate the electronic and electrical properties of our FTJ devices. The good agreement between the experimental and theoretical model attests to the tunneling electroresistance effect (TER) in our FTJ device. A TER ratio of ∼15 was calculated for the present FTJ device at low read voltage (+0.2 V). This study suggests that Hf0.5Zr0.5O2is a promising candidate for integration into conventional Si memory technology.
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Fabian
authors.identifier: http://orcid.org/0000-0002-9069-9710
authors.initials: F
authors.lastname: Ambriz-Vargas
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Gitanjali
authors.initials: G
authors.lastname: Kolhatkar
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Maxime
authors.initials: M
authors.lastname: Broyer
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Azza
authors.initials: A
authors.lastname: Hadj-Youssef
authors.affiliation: Plasmionique Inc. , 9092 Rimouski, Brossard, Québec J4X2S3, Canada.
authors.forename: Rafik
authors.initials: R
authors.lastname: Nouar
authors.affiliation: Plasmionique Inc. , 9092 Rimouski, Brossard, Québec J4X2S3, Canada.
authors.forename: Andranik
authors.initials: A
authors.lastname: Sarkissian
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Reji
authors.initials: R
authors.lastname: Thomas
authors.affiliation: Departamento de Ingeniería en Metalurgia y Materiales, Instituto Politécnico Nacional , Zacatenco 07738, México.
authors.forename: Carlos
authors.identifier: http://orcid.org/0000-0002-9561-1511
authors.initials: C
authors.lastname: Gomez-Yáñez
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Marc A
authors.initials: MA
authors.lastname: Gauthier
authors.affiliation: Centre Énergie, Matériaux et Télécommunications, INRS , Varennes, Québec J3X1S2, Canada.
authors.forename: Andreas
authors.initials: A
authors.lastname: Ruediger
keywords: CMOS process; electronic band alignment; ferroelectric tunnel junctions; nanoscale characterization; tunneling electroresistance effect