title: Wafer-scale production of highly uniform two-dimensional MoS2by metal-organic chemical vapor deposition.
abstract: Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS2) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS2monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer. The influences of growth pressure, ambient gases (Ar, H2), and S/Mo molar flow ratio on the MoS2layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS2-based field effect transistors achieve an electron mobility of 0.47 cm2V-1s-1and on/off current ratio of 5.4 × 104. This work demonstrates the potential for reliable wafer-scale production of 2D MoS2for practical applications in next-generation electronic and optical devices.
authors.affiliation: Center for Vacuum Technology, Korea Research Institute of Standards and Science, Daejeon 305-340, Republic of Korea.
authors.forename: TaeWan
authors.initials: T
authors.lastname: Kim
authors.forename: Jihun
authors.initials: J
authors.lastname: Mun
authors.forename: Hyeji
authors.initials: H
authors.lastname: Park
authors.forename: DaeHwa
authors.initials: D
authors.lastname: Joung
authors.forename: Mangesh
authors.initials: M
authors.lastname: Diware
authors.forename: Chegal
authors.initials: C
authors.lastname: Won
authors.forename: Jonghoo
authors.initials: J
authors.lastname: Park
authors.forename: Soo-Hwan
authors.initials: SH
authors.lastname: Jeong
authors.forename: Sang-Woo
authors.initials: SW
authors.lastname: Kang