title: Enhanced dielectric deposition on single-layer MoS2with low damage using remote N2plasma treatment.
abstract: Using remote N2plasma treatment to promote dielectric deposition on the dangling-bond free MoS2is explored for the first time. The N2plasma induced damages are systematically studied by the defect-sensitive acoustic-phonon Raman of single-layer MoS2, with samples undergoing O2plasma treatment as a comparison. O2plasma treatment causes defects in MoS2mainly by oxidizing MoS2along the already defective sites (most likely the flake edges), which results in the layer oxidation of MoS2. In contrast, N2plasma causes defects in MoS2mainly by straining and mechanically distorting the MoS2layers first. Owing to the relatively strong MoS2-substrate interaction and chemical inertness of MoS2in N2plasma, single-layer MoS2shows great stability in N2plasma and only stable point defects are introduced after long-duration N2plasma exposure. Considering the enormous vulnerability of single-layer MoS2in O2plasma and the excellent stability of single-layer MoS2in N2plasma, the remote N2plasma treatment shows great advantage as surface functionalization to promote dielectric deposition on single-layer MoS2.
authors.affiliation: Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Hong Kong SAR, People's Republic of China.
authors.forename: Qingkai
authors.initials: Q
authors.lastname: Qian
authors.forename: Zhaofu
authors.initials: Z
authors.lastname: Zhang
authors.forename: Mengyuan
authors.initials: M
authors.lastname: Hua
authors.forename: Gaofei
authors.initials: G
authors.lastname: Tang
authors.forename: Jiacheng
authors.initials: J
authors.lastname: Lei
authors.forename: Feifei
authors.initials: F
authors.lastname: Lan
authors.forename: Yongkuan
authors.initials: Y
authors.lastname: Xu
authors.forename: Ruyue
authors.initials: R
authors.lastname: Yan
authors.forename: Kevin J
authors.initials: KJ
authors.lastname: Chen