title: Synthesis, Characterization, and Device Application of Antimony-Substituted Violet Phosphorus: A Layered Material.
abstract: Two-dimensional (2D) nanoflakes have emerged as a class of materials that may impact electronic technologies in the near future. A challenging but rewarding work is to experimentally identify 2D materials and explore their properties. Here, we report the synthesis of a layered material, P20.56(1)Sb0.44(1), with a systematic study on characterizations and device applications. This material demonstrates a direct band gap of around 1.67 eV. Using a laser-cutting method, the thin flakes of this material can be separated into multiple segments. We have also fabricated field effect transistors based on few-layer P20.56(1)Sb0.44(1)flakes with a thickness down to a few nanometers. Interestingly, these field effect transistors show strong photoresponse within the wavelength range of visible light. At room temperature, we have achieved good mobility values (up to 58.96 cm2/V·s), a reasonably high on/off current ratio (∼103), and intrinsic responsivity up to 10 μA/W. Our results demonstrate the potential of P20.56(1)Sb0.44(1)thin flakes as a two-dimensional material for applications in visible light detectors.
authors.affiliation: Department für Chemie, Technische Universität München , Lichtenbergstrasse 4, 85747 Garching b. München, Germany.
authors.forename: Franziska
authors.initials: F
authors.lastname: Baumer
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Yuqiang
authors.initials: Y
authors.lastname: Ma
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Chenfei
authors.identifier: 0000-0001-8635-3429
authors.initials: C
authors.lastname: Shen
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Anyi
authors.initials: A
authors.lastname: Zhang
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Liang
authors.initials: L
authors.lastname: Chen
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Yihang
authors.identifier: 0000-0002-2491-9439
authors.initials: Y
authors.lastname: Liu
authors.affiliation: Department für Chemie, Technische Universität München , Lichtenbergstrasse 4, 85747 Garching b. München, Germany.
authors.forename: Daniela
authors.initials: D
authors.lastname: Pfister
authors.affiliation: Department für Chemie, Technische Universität München , Lichtenbergstrasse 4, 85747 Garching b. München, Germany.
authors.forename: Tom
authors.initials: T
authors.lastname: Nilges
authors.affiliation: Department of Electrical Engineering, University of Southern California , 3710 McClintock Avenue, Los Angeles, California 90089-0271, United States.
authors.forename: Chongwu
authors.identifier: 0000-0001-8448-8450
authors.initials: C
authors.lastname: Zhou
keywords: antimony-substituted violet phosphorus; field effect transistor; layered material; mobility; photoresponse