title: Unveiling the carrier transport mechanism in epitaxial graphene for forming wafer-scale, single-domain graphene.
abstract: Graphene epitaxy on the Si face of a SiC wafer offers monolayer graphene with unique crystal orientation at the wafer-scale. However, due to carrier scattering near vicinal steps and excess bilayer stripes, the size of electrically uniform domains is limited to the width of the terraces extending up to a few microns. Nevertheless, the origin of carrier scattering at the SiC vicinal steps has not been clarified so far. A layer-resolved graphene transfer (LRGT) technique enables exfoliation of the epitaxial graphene formed on SiC wafers and transfer to flat Si wafers, which prepares crystallographically single-crystalline monolayer graphene. Because the LRGT flattens the deformed graphene at the terrace edges and permits an access to the graphene formed at the side wall of vicinal steps, components that affect the mobility of graphene formed near the vicinal steps of SiC could be individually investigated. Here, we reveal that the graphene formed at the side walls of step edges is pristine, and scattering near the steps is mainly attributed by the deformation of graphene at step edges of vicinalized SiC while partially from stripes of bilayer graphene. This study suggests that the two-step LRGT can prepare electrically single-domain graphene at the wafer-scale by removing the major possible sources of electrical degradation.
authors.affiliation: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.|Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.|IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.|Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
authors.forename: Sang-Hoon
authors.initials: SH
authors.lastname: Bae
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: Xiaodong
authors.initials: X
authors.lastname: Zhou
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: Seyoung
authors.initials: S
authors.lastname: Kim
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: Yun Seog
authors.initials: YS
authors.lastname: Lee
authors.affiliation: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.|Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.
authors.forename: Samuel S
authors.initials: SS
authors.lastname: Cruz
authors.affiliation: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.|Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.
authors.forename: Yunjo
authors.initials: Y
authors.lastname: Kim
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: James B
authors.initials: JB
authors.lastname: Hannon
authors.affiliation: Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095.
authors.forename: Yang
authors.initials: Y
authors.lastname: Yang
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: Devendra K
authors.initials: DK
authors.lastname: Sadana
authors.affiliation: IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.
authors.forename: Frances M
authors.initials: FM
authors.lastname: Ross
authors.affiliation: School of Electronics Engineering, Kyungpook National University, Daegu 702-701, Korea.
authors.forename: Hongsik
authors.initials: H
authors.lastname: Park
authors.affiliation: Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139; jeehwan@mit.edu.|Research Laboratory of Electronics, Massachusetts Institute of Technology, Cambridge, MA 02139.|IBM T. J. Watson Research Center, Yorktown Heights, NY 10598.|Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139.
authors.forename: Jeehwan
authors.initials: J
authors.lastname: Kim
keywords: carrier transport; epitaxial graphene; single crystal; single domain