title: Mesoscopic quantum effects in a bad metal, hydrogen-doped vanadium dioxide.
abstract: The standard treatment of quantum corrections to semiclassical electronic conduction assumes that charge carriers propagate many wavelengths between scattering events, and succeeds in explaining multiple phenomena (weak localization magnetoresistance (WLMR), universal conductance fluctuations, Aharonov-Bohm oscillations) observed in polycrystalline metals and doped semiconductors in various dimensionalities. We report apparent WLMR and conductance fluctuations in HxVO2, a poor metal (in violation of the Mott-Ioffe-Regel limit) stabilized by the suppression of the VO2metal-insulator transition through atomic hydrogen doping. Epitaxial thin films, single-crystal nanobeams, and nanosheets show similar phenomenology, though the details of the apparent WLMR seem to depend on the combined effects of the strain environment and presumed doping level. Self-consistent quantitative analysis of the WLMR is challenging given this and the high resistivity of the material, since the quantitative expressions for WLMR are derived assuming good metallicity. These observations raise the issue of how to assess and analyze mesoscopic quantum effects in poor metals.
authors.affiliation: Applied Physics Graduate Program, Smalley-Curl Institute, Rice University, 6100 Main St., Houston, TX 77005, United States of America.
authors.forename: Will J
authors.initials: WJ
authors.lastname: Hardy
authors.forename: Heng
authors.initials: H
authors.lastname: Ji
authors.forename: Hanjong
authors.initials: H
authors.lastname: Paik
authors.forename: Darrell G
authors.initials: DG
authors.lastname: Schlom
authors.forename: Douglas
authors.initials: D
authors.lastname: Natelson