title: From time-resolved atomic-scale imaging of individual donors to their cooperative dynamics.
abstract: The key elements in the steady miniaturization process of cutting-edge semiconductor devices are the understanding and controlling of charge dynamics on the atomic scale. In detail, we address the study of charging processes of individual doping atoms and, especially, the interaction of those atoms with their surroundings. We use pulsed optical excitation in combination with scanning tunneling microscopy at the n-doped gallium arsenide [GaAs(110)] surface to investigate single donor dynamics within a nanoscaled, localized space charge region. Tuning the tunnel rate can drive the system into nonequilibrium conditions, allowing distinction between the decay of optically induced free charge carriers and the decay of donor charge states. The latter process is atomically resolved and discussed with respect to donor-level binding energies and local donor configurations.
authors.affiliation: 4th Physical Institute, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
authors.forename: Philipp
authors.initials: P
authors.lastname: Kloth
authors.affiliation: 4th Physical Institute, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen, Germany.
authors.forename: Martin
authors.initials: M
authors.lastname: Wenderoth
keywords: Dopant dynamics; GaAs; Scanning tunneling microscopy; nanotechnology; semiconductor