title: Enhanced Performance of Planar Perovskite Solar Cells Using Low-Temperature Solution-Processed Al-Doped SnO2as Electron Transport Layers.
abstract: Lead halide perovskite solar cells (PSCs) appear to be the ideal future candidate for photovoltaic applications owing to the rapid development in recent years. The electron transport layers (ETLs) prepared by low-temperature process are essential for widespread implementation and large-scale commercialization of PSCs. Here, we report an effective approach for producing planar PSCs with Al3+doped SnO2ETLs prepared by using a low-temperature solution-processed method. The Al dopant in SnO2enhanced the charge transport behavior of planar PSCs and increased the current density of the devices, compared with the undoped SnO2ETLs. Moreover, the enhanced electrical property also improved the fill factors (FF) and power conversion efficiency (PCE) of the solar cells. This study has indicated that the low-temperature solution-processed Al-SnO2is a promising ETL for commercialization of planar PSCs.
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Hao
authors.initials: H
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Detao
authors.initials: D
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Yafei
authors.initials: Y
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Chenyun
authors.initials: C
authors.lastname: Wang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Ting
authors.initials: T
authors.lastname: Zhang
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China.
authors.forename: Peng
authors.initials: P
authors.lastname: Zhang
authors.affiliation: Department of Electrical and Computer Engineering, Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY, 40506, USA.
authors.forename: Hojjatollah
authors.initials: H
authors.lastname: Sarvari
authors.affiliation: Department of Electrical and Computer Engineering, Center for Nanoscale Science and Engineering, University of Kentucky, Lexington, KY, 40506, USA. zhichen@engr.uky.edu.
authors.forename: Zhi
authors.initials: Z
authors.lastname: Chen
authors.affiliation: State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China (UESTC), Chengdu, Sichuan, 610054, China. shibinli@uestc.edu.cn.
authors.forename: Shibin
authors.initials: S
authors.lastname: Li
keywords: Al-doped SnO2; Electron transport layers; Low-temperature solution-process; Perovskite solar cells