title: High Mobility 2D Palladium Diselenide Field-Effect Transistors with Tunable Ambipolar Characteristics.
abstract: Due to the intriguing optical and electronic properties, 2D materials have attracted a lot of interest for the electronic and optoelectronic applications. Identifying new promising 2D materials will be rewarding toward the development of next generation 2D electronics. Here, palladium diselenide (PdSe2), a noble-transition metal dichalcogenide (TMDC), is introduced as a promising high mobility 2D material into the fast growing 2D community. Field-effect transistors (FETs) based on ultrathin PdSe2show intrinsic ambipolar characteristic. The polarity of the FET can be tuned. After vacuum annealing, the authors find PdSe2to exhibit electron-dominated transport with high mobility (µe (max)= 216 cm2V-1s-1) and on/off ratio up to 103. Hole-dominated-transport PdSe2can be obtained by molecular doping using F4-TCNQ. This pioneer work on PdSe2will spark interests in the less explored regime of noble-TMDCs.
authors.affiliation: Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.|CINTRA UMI CNRS/NTU/THALES, Singapore, 637553, Singapore.
authors.forename: Wai Leong
authors.initials: WL
authors.lastname: Chow
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Peng
authors.initials: P
authors.lastname: Yu
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Fucai
authors.initials: F
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Jinhua
authors.initials: J
authors.lastname: Hong
authors.affiliation: Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.|CINTRA UMI CNRS/NTU/THALES, Singapore, 637553, Singapore.|State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Xingli
authors.initials: X
authors.lastname: Wang
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Qingsheng
authors.initials: Q
authors.lastname: Zeng
authors.affiliation: Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Chuang-Han
authors.initials: CH
authors.lastname: Hsu
authors.affiliation: Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Chao
authors.initials: C
authors.lastname: Zhu
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Jiadong
authors.initials: J
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Xiaowei
authors.initials: X
authors.lastname: Wang
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 639798, Singapore.
authors.forename: Juan
authors.initials: J
authors.lastname: Xia
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 639798, Singapore.
authors.forename: Jiaxu
authors.initials: J
authors.lastname: Yan
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 639798, Singapore.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Di
authors.initials: D
authors.lastname: Wu
authors.affiliation: School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 639798, Singapore.
authors.forename: Ting
authors.initials: T
authors.lastname: Yu
authors.affiliation: CINTRA UMI CNRS/NTU/THALES, Singapore, 637553, Singapore.|School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 639798, Singapore.
authors.forename: Zexiang
authors.initials: Z
authors.lastname: Shen
authors.affiliation: Department of Physics, National University of Singapore, Singapore, 117542, Singapore.
authors.forename: Hsin
authors.initials: H
authors.lastname: Lin
authors.affiliation: State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, Hangzhou, Zhejiang, 310027, P. R. China.
authors.forename: Chuanhong
authors.initials: C
authors.lastname: Jin
authors.affiliation: Centre for Micro-/Nano-electronics (NOVITAS), School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.|CINTRA UMI CNRS/NTU/THALES, Singapore, 637553, Singapore.
authors.forename: Beng Kang
authors.initials: BK
authors.lastname: Tay
authors.affiliation: CINTRA UMI CNRS/NTU/THALES, Singapore, 637553, Singapore.|Centre for Programmed Materials, School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Liu
keywords: 2D materials; ambipolar; field-effect transistors; high mobility; palladium diselenide