title: The effect of Sb-surfactant on GaInP CuPtBtype ordering: assessment through dark field TEM and aberration corrected HAADF imaging.
abstract: We report on the effect of Sb on the microstructure of GaInP layers grown by metal organic vapor phase epitaxy (MOVPE). These layers exhibit a CuPtBsingle variant ordering due to the intentional misorientation of the substrate (Ge(001) substrates with 6° misorientation towards the nearest [111] axis). The use of Sb as a surfactant during the GaInP growth does not modify the type of ordering, but it is found that the order parameter (η) decreases with increasing Sb flux. Dark field microscopy reveals a variation of the angle of the antiphase boundaries (APBs) with Sb amount. The microstructure is assessed through high angle annular dark field (HAADF) experiments and image simulation revealing Z-contrast loss in APBs due to the superposition of ordered domains.
authors.affiliation: LENS-MIND, Departament d'Enginyeries: Electrònica, Institut de Nanociència i Nanotecnologia (IN2UB), Universitat de Barcelona, c/Martí i Franquès 1, Barcelona, 08028, Spain. ccoll@el.ub.edu.
authors.forename: C
authors.initials: C
authors.lastname: Coll
authors.forename: E
authors.initials: E
authors.lastname: Barrigón
authors.forename: L
authors.initials: L
authors.lastname: López-Conesa
authors.forename: J
authors.initials: J
authors.lastname: Rebled
authors.forename: L
authors.initials: L
authors.lastname: Barrutia
authors.forename: I
authors.initials: I
authors.lastname: Rey-Stolle
authors.forename: S
authors.initials: S
authors.lastname: Estradé
authors.forename: C
authors.initials: C
authors.lastname: Algora
authors.forename: F
authors.initials: F
authors.lastname: Peiró