title: Investigation of an InP-based image converter with optical excitation.
abstract: An image converter based on an indium phosphide has been developed to measure the two-dimensional spatial profile of the incident photon flux by probing the rapid change of the refractive index in the semiconductor. The spatial resolution, dynamic range, and temporal response of this image converter have been investigated with optical methods. The results show that the spatial resolution is ∼15 cycles/mm at the percent modulation transfer function of 0.5, the dynamic range is about 100, and the time response is in the order of 600 ps. This scheme can provide an alternative choice as an imaging diagnostic for experiments in the area of high-energy density physics.
authors.affiliation: Institute of Wide Bandgap Semiconductors and Devices, Xi'an Jiaotong University, Xi'an, China.
authors.forename: Y
authors.initials: Y
authors.lastname: Song
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: L
authors.initials: L
authors.lastname: Cao
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: B D
authors.initials: BD
authors.lastname: Peng
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: G Z
authors.initials: GZ
authors.lastname: Song
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: Z Q
authors.initials: ZQ
authors.lastname: Yue
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: J M
authors.initials: JM
authors.lastname: Ma
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: L
authors.initials: L
authors.lastname: Sheng
authors.affiliation: State Key Laboratory of Intense Pulsed Radiation Simulation and Effect, Northwest Institute of Nuclear Technology, Xi'an, China.
authors.forename: B K
authors.initials: BK
authors.lastname: Li
authors.affiliation: Institute of Wide Bandgap Semiconductors and Devices, Xi'an Jiaotong University, Xi'an, China.
authors.forename: H X
authors.identifier: 0000000228830765
authors.initials: HX
authors.lastname: Wang