title: III-nitride core-shell nanorod array on quartz substrates.
abstract: We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal-organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core-shell nanorods were then investigated. The nanorods were highly crystalline and the core-shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates.
authors.affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Si-Young
authors.initials: SY
authors.lastname: Bae
authors.affiliation: School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
authors.forename: Jung-Wook
authors.initials: JW
authors.lastname: Min
authors.affiliation: School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
authors.forename: Hyeong-Yong
authors.initials: HY
authors.lastname: Hwang
authors.affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Kaddour
authors.initials: K
authors.lastname: Lekhal
authors.affiliation: Department of Electrical Engineering and Computer Science, Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Ho-Jun
authors.initials: HJ
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
authors.forename: Young-Dahl
authors.initials: YD
authors.lastname: Jho
authors.affiliation: School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
authors.forename: Dong-Seon
authors.initials: DS
authors.lastname: Lee
authors.affiliation: School of Electrical Engineering and Computer Science, Gwangju Institute of Science and Technology (GIST), Gwangju, 61005, Republic of Korea.
authors.forename: Yong-Tak
authors.initials: YT
authors.lastname: Lee
authors.affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Nobuyuki
authors.initials: N
authors.lastname: Ikarashi
authors.affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Yoshio
authors.initials: Y
authors.lastname: Honda
authors.affiliation: Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya, 464-8603, Japan.|Akasaki Research Center (ARC), Nagoya University, Nagoya, 464-8603, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Amano