title: Complementary Metal Oxide Semiconductor-Compatible, High-Mobility, ⟨111⟩-Oriented GaSb Nanowires Enabled by Vapor-Solid-Solid Chemical Vapor Deposition.
abstract: Using CMOS-compatible Pd catalysts, we demonstrated the formation of high-mobility ⟨111⟩-oriented GaSb nanowires (NWs) via vapor-solid-solid (VSS) growth by surfactant-assisted chemical vapor deposition through a complementary experimental and theoretical approach. In contrast to NWs formed by the conventional vapor-liquid-solid (VLS) mechanism, cylindrical-shaped Pd5Ga4catalytic seeds were present in our Pd-catalyzed VSS-NWs. As solid catalysts, stoichiometric Pd5Ga4was found to have the lowest crystal surface energy and thus giving rise to a minimal surface diffusion as well as an optimal in-plane interface orientation at the seed/NW interface for efficient epitaxial NW nucleation. These VSS characteristics led to the growth of slender NWs with diameters down to 26.9 ± 3.5 nm. Over 95% high crystalline quality NWs were grown in ⟨111⟩ orientation for a wide diameter range of between 10 and 70 nm. Back-gated field-effect transistors (FETs) fabricated using the Pd-catalyzed GaSb NWs exhibit a superior peak hole mobility of ∼330 cm2V-1s-1, close to the mobility limit for a NW channel diameter of ∼30 nm with a free carrier concentration of ∼1018cm-3. This suggests that the NWs have excellent homogeneity in phase purity, growth orientation, surface morphology and electrical characteristics. Contact printing process was also used to fabricate large-scale assembly of Pd-catalyzed GaSb NW parallel arrays, confirming the potential constructions and applications of these high-performance electronic devices.
authors.affiliation: Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China.
authors.forename: Zai-Xing
authors.initials: ZX
authors.lastname: Yang
authors.affiliation: Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China.
authors.forename: Lizhe
authors.initials: L
authors.lastname: Liu
authors.affiliation: State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: SenPo
authors.initials: S
authors.lastname: Yip
authors.forename: Dapan
authors.initials: D
authors.lastname: Li
authors.affiliation: State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Lifan
authors.initials: L
authors.lastname: Shen
authors.forename: Ziyao
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: State Key Laboratory of Multiphase Complex Systems, Institute of Process Engineering, Chinese Academy of Sciences , Beijing 100190, PR China.
authors.forename: Ning
authors.identifier: 0000-0001-9177-6792
authors.initials: N
authors.lastname: Han
authors.forename: Tak Fu
authors.initials: TF
authors.lastname: Hung
authors.affiliation: State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Edwin Yue-Bun
authors.initials: EY
authors.lastname: Pun
authors.affiliation: Key Laboratory of Modern Acoustics, MOE, Institute of Acoustics, Collaborative Innovation Center of Advanced Microstructures, National Laboratory of Solid State Microstructures, Nanjing University , Nanjing 210093, PR China.
authors.forename: Xinglong
authors.identifier: 0000-0002-2787-3069
authors.initials: X
authors.lastname: Wu
authors.affiliation: Center of Nanoelectronics and School of Microelectronics, Shandong University , Jinan 250100, PR China.|School of Electrical and Electronic Engineering, University of Manchester , Manchester M13 9PL, U.K.
authors.forename: Aimin
authors.initials: A
authors.lastname: Song
authors.affiliation: State Key Laboratory of Millimeter Waves, City University of Hong Kong , 83 Tat Chee Avenue, Kowloon, Hong Kong.
authors.forename: Johnny C
authors.identifier: 0000-0003-3000-8794
authors.initials: JC
authors.lastname: Ho
keywords: GaSb nanowires; growth orientation; high mobility; in-plane lattice mismatch; interface plane orientation; vapor−solid−solid