title: Multifunctional Organic-Semiconductor Interfacial Layers for Solution-Processed Oxide-Semiconductor Thin-Film Transistor.
abstract: The stabilization and control of the electrical properties in solution-processed amorphous-oxide semiconductors (AOSs) is crucial for the realization of cost-effective, high-performance, large-area electronics. In particular, impurity diffusion, electrical instability, and the lack of a general substitutional doping strategy for the active layer hinder the industrial implementation of copper electrodes and the fine tuning of the electrical parameters of AOS-based thin-film transistors (TFTs). In this study, the authors employ a multifunctional organic-semiconductor (OSC) interlayer as a solution-processed thin-film passivation layer and a charge-transfer dopant. As an electrically active impurity blocking layer, the OSC interlayer enhances the electrical stability of AOS TFTs by suppressing the adsorption of environmental gas species and copper-ion diffusion. Moreover, charge transfer between the organic interlayer and the AOS allows the fine tuning of the electrical properties and the passivation of the electrical defects in the AOS TFTs. The development of a multifunctional solution-processed organic interlayer enables the production of low-cost, high-performance oxide semiconductor-based circuits.
authors.affiliation: Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Republic of Korea.
authors.forename: Guhyun
authors.initials: G
authors.lastname: Kwon
authors.affiliation: Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Republic of Korea.
authors.forename: Keetae
authors.initials: K
authors.lastname: Kim
authors.affiliation: Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-Gu, Seoul, 06974, Republic of Korea.
authors.forename: Byung Doo
authors.initials: BD
authors.lastname: Choi
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
authors.forename: Jeongkyun
authors.initials: J
authors.lastname: Roh
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center (ISRC), Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 08826, Republic of Korea.
authors.forename: Changhee
authors.initials: C
authors.lastname: Lee
authors.affiliation: Department of Energy and Materials Engineering, Dongguk University, 30 Pildong-ro 1-gil, Jung-gu, Seoul, 04620, Republic of Korea.
authors.forename: Yong-Young
authors.initials: YY
authors.lastname: Noh
authors.affiliation: Department of Chemistry, Pukyong National University, 45 Yongso-ro, Namgu Pusan, 48513, Republic of Korea.
authors.forename: SungYong
authors.initials: S
authors.lastname: Seo
authors.affiliation: Department of Chemistry, Chung-Ang University, 84 Heukseok-ro, Dongjak-Gu, Seoul, 06974, Republic of Korea.
authors.forename: Myung-Gil
authors.initials: MG
authors.lastname: Kim
authors.affiliation: Department of Chemical and Biomolecular Engineering, Sogang University, 35 Baekbeom-ro, Mapo-gu, Seoul, 04107, Republic of Korea.
authors.forename: Choongik
authors.initials: C
authors.lastname: Kim
keywords: copper electrodes; interfacial layers; oxide semiconductors; solution processes; thin-film transistors