title: Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat.
abstract: Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocks of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. The ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.
authors.affiliation: Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA.|Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Hyo Seon
authors.initials: HS
authors.lastname: Suh
authors.affiliation: Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Do Han
authors.initials: DH
authors.lastname: Kim
authors.affiliation: Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Priya
authors.initials: P
authors.lastname: Moni
authors.affiliation: Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA.|Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Shisheng
authors.initials: S
authors.lastname: Xiong
authors.affiliation: Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Leonidas E
authors.identifier: 0000-0003-4990-1064
authors.initials: LE
authors.lastname: Ocola
authors.affiliation: Photon Sciences Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Nestor J
authors.initials: NJ
authors.lastname: Zaluzec
authors.affiliation: Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.
authors.forename: Karen K
authors.initials: KK
authors.lastname: Gleason
authors.affiliation: Institute for Molecular Engineering, University of Chicago, Chicago, Illinois 60637, USA.|Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439, USA.
authors.forename: Paul F
authors.initials: PF
authors.lastname: Nealey