title: Effects of Annealing Temperature on Properties of Ti-Ga-Doped ZnO Films Deposited on Flexible Substrates.
abstract: An investigation is performed into the optical, electrical, and microstructural properties of Ti-Ga-doped ZnO films deposited on polyimide (PI) flexible substrates and then annealed at temperatures of 300 °C, 400 °C, and 450 °C, respectively. The X-ray diffraction (XRD) analysis results show that all of the films have a strong (002) Ga doped ZnO (GZO) preferential orientation. As the annealing temperature is increased to 400 °C, the optical transmittance increases and the electrical resistivity decreases. However, as the temperature is further increased to 450 °C, the transmittance reduces and the resistivity increases due to a carbonization of the PI substrate. Finally, the crystallinity of the ZnO film improves with an increasing annealing temperature only up to 400 °C and is accompanied by a smaller crystallite size and a lower surface roughness.
authors.affiliation: Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan. thchen@cc.kuas.edu.tw.
authors.forename: Tao-Hsing
authors.initials: TH
authors.lastname: Chen
authors.affiliation: Department of Mechanical Engineering, National Kaohsiung University of Applied Sciences, Kaohsiung City 807, Taiwan. stars@pchome.com.tw.
authors.forename: Ting-You
authors.initials: TY
authors.lastname: Chen
keywords: Ti-Ga; annealing temperature effect; flexible substrate; polyimide