title: Selective Purcell enhancement of two closely linked zero-phonon transitions of a silicon carbide color center.
abstract: Point defects in silicon carbide are rapidly becoming a platform of great interest for single-photon generation, quantum sensing, and quantum information science. Photonic crystal cavities (PCCs) can serve as an efficient light-matter interface both to augment the defect emission and to aid in studying the defects' properties. In this work, we fabricate 1D nanobeam PCCs in 4H-silicon carbide with embedded silicon vacancy centers. These cavities are used to achieve Purcell enhancement of two closely spaced defect zero-phonon lines (ZPL). Enhancements of >80-fold are measured using multiple techniques. Additionally, the nature of the cavity coupling to the different ZPLs is examined.
authors.affiliation: John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138; dbracher@fas.harvard.edu ehu@seas.harvard.edu.|Department of Physics, Harvard University, Cambridge, MA 02138.
authors.forename: David O
authors.initials: DO
authors.lastname: Bracher
authors.affiliation: John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138.
authors.forename: Xingyu
authors.initials: X
authors.lastname: Zhang
authors.affiliation: John A. Paulson School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138; dbracher@fas.harvard.edu ehu@seas.harvard.edu.
authors.forename: Evelyn L
authors.initials: EL
authors.lastname: Hu
keywords: Purcell enhancement; cavity coupling; photonic crystal cavity; point defect; silicon carbide