title: Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting.
abstract: Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Xiaoyi
authors.initials: X
authors.lastname: Li
authors.forename: Renrong
authors.initials: R
authors.lastname: Liang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Juan
authors.initials: J
authors.lastname: Tao
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Zhengchun
authors.initials: Z
authors.lastname: Peng
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Qiming
authors.initials: Q
authors.lastname: Xu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Xun
authors.initials: X
authors.lastname: Han
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Xiandi
authors.initials: X
authors.lastname: Wang
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Chunfeng
authors.initials: C
authors.lastname: Wang
authors.forename: Jing
authors.initials: J
authors.lastname: Zhu
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.
authors.forename: Caofeng
authors.identifier: 0000-0001-7693-5388
authors.initials: C
authors.lastname: Pan
authors.affiliation: Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences; National Center for Nanoscience and Technology , Beijing 100083, P. R. China.|School of Materials Science and Engineering, Georgia Institute of Technology , Atlanta, Georgia 30332-0245, United States.
authors.forename: Zhong Lin
authors.identifier: 0000-0002-5530-0380
authors.initials: ZL
authors.lastname: Wang
keywords: energy saving; piezo-phototronic effect; silicon microwire array; ultrathin flexible electronics; wire array transfer