title: Strain-Gradient Position Mapping of Semiconductor Quantum Dots.
abstract: We introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from ±35  nm down to ±1  nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.|Departamento de Física, Instituto de Ciências Exatas, Universidade Federal de Minas Gerais, Belo Horizonte, Brazil.
authors.forename: P-L
authors.initials: PL
authors.lastname: de Assis
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.|INAC-PHELIQS, "Nanophysique et semiconducteurs" group, CEA, Univ. Grenoble Alpes, France.
authors.forename: I
authors.initials: I
authors.lastname: Yeo
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: A
authors.initials: A
authors.lastname: Gloppe
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: H A
authors.initials: HA
authors.lastname: Nguyen
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: D
authors.initials: D
authors.lastname: Tumanov
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: E
authors.initials: E
authors.lastname: Dupont-Ferrier
authors.affiliation: INAC-PHELIQS, "Nanophysique et semiconducteurs" group, CEA, Univ. Grenoble Alpes, France.
authors.forename: N S
authors.initials: NS
authors.lastname: Malik
authors.affiliation: INAC-PHELIQS, "Nanophysique et semiconducteurs" group, CEA, Univ. Grenoble Alpes, France.
authors.forename: E
authors.initials: E
authors.lastname: Dupuy
authors.affiliation: INAC-PHELIQS, "Nanophysique et semiconducteurs" group, CEA, Univ. Grenoble Alpes, France.
authors.forename: J
authors.initials: J
authors.lastname: Claudon
authors.affiliation: INAC-PHELIQS, "Nanophysique et semiconducteurs" group, CEA, Univ. Grenoble Alpes, France.
authors.forename: J-M
authors.initials: JM
authors.lastname: Gérard
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: A
authors.initials: A
authors.lastname: Auffèves
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: O
authors.initials: O
authors.lastname: Arcizet
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: M
authors.initials: M
authors.lastname: Richard
authors.affiliation: Institut NEEL, CNRS, Univ. Grenoble Alpes, France.
authors.forename: J-Ph
authors.initials: JP
authors.lastname: Poizat