title: Surface Evolution of Nano-Textured 4H-SiC Homoepitaxial Layers after High Temperature Treatments: Morphology Characterization and Graphene Growth.
abstract: Nano-textured 4H-SiC homoepitaxial layers (NSiCLs) were grown on 4H-SiC(0001) substrates using a low pressure chemical vapor deposition technique (LPCVD), and subsequently were subjected to high temperature treatments (HTTs) for investigation of their surface morphology evolution and graphene growth. It was found that continuously distributed nano-scale patterns formed on NSiCLs which were about submicrons in-plane and about 100 nanometers out-of-plane in size. After HTTs under vacuum, pattern sizes reduced, and the sizes of the remains were inversely proportional to the treatment time. Referring to Raman spectra, the establishment of multi-layer graphene (MLG) on NSiCL surfaces was observed. MLG withsp² disorders was obtained from NSiCLs after a high temperature treatment under vacuum at 1700 K for two hours, while MLG withoutsp² disorders was obtained under Ar atmosphere at 1900 K.
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. liuxf@mail.semi.ac.cn.
authors.forename: Xingfang
authors.initials: X
authors.lastname: Liu
authors.affiliation: Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. chenyu@semi.ac.cn.
authors.forename: Yu
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084, China. czsun@tsinghua.edu.cn.
authors.forename: Changzheng
authors.initials: C
authors.lastname: Sun
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. guanmin@semi.ac.cn.
authors.forename: Min
authors.initials: M
authors.lastname: Guan
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zhang_yang@semi.ac.cn.
authors.forename: Yang
authors.initials: Y
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. fzhang@semi.ac.cn.
authors.forename: Feng
authors.initials: F
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. gshsun@semi.ac.cn.
authors.forename: Guosheng
authors.initials: G
authors.lastname: Sun
authors.affiliation: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zhang_yang@semi.ac.cn.|Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China. zhang_yang@semi.ac.cn.
authors.forename: Yiping
authors.initials: Y
authors.lastname: Zeng
keywords: 4H–SiC; evolution; graphene; morphology; nano-textured