title: Bi-layer Channel AZO/ZnO Thin Film Transistors Fabricated by Atomic Layer Deposition Technique.
abstract: This letter demonstrates bi-layer channel Al-doped ZnO/ZnO thin film transistors (AZO/ZnO TFTs) via atomic layer deposition process at a relatively low temperature. The effects of annealing in oxygen atmosphere at different temperatures have also been investigated. The ALD bi-layer channel AZO/ZnO TFTs annealed in dry O2at 300 °C exhibit a low leakage current of 2.5 × 10-13A, Ion/Ioffratio of 1.4 × 107, subthreshold swing (SS) of 0.23 V/decade, and high transmittance. The enhanced performance obtained from the bi-layer channel AZO/ZnO TFT devices is explained by the inserted AZO front channel layer playing the role of the mobility booster.
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Huijin
authors.initials: H
authors.lastname: Li
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China. handedong@pku.edu.cn.
authors.forename: Dedong
authors.initials: D
authors.lastname: Han
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Liqiao
authors.initials: L
authors.lastname: Liu
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Junchen
authors.initials: J
authors.lastname: Dong
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Guodong
authors.initials: G
authors.lastname: Cui
authors.affiliation: Shenzhen Graduate School, Peking University, 518055, Shenzhen, China.
authors.forename: Shengdong
authors.initials: S
authors.lastname: Zhang
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Xing
authors.initials: X
authors.lastname: Zhang
authors.affiliation: Institute of Microelectronics, Peking University, 100871, Beijing, China.
authors.forename: Yi
authors.initials: Y
authors.lastname: Wang
keywords: ALD; AZO; Bi-layer channel; Thin-film transistor; ZnO