title: Integrated arrays of air-dielectric graphene transistors as transparent active-matrix pressure sensors for wide pressure ranges.
abstract: Integrated electronic circuitries with pressure sensors have been extensively researched as a key component for emerging electronics applications such as electronic skins and health-monitoring devices. Although existing pressure sensors display high sensitivities, they can only be used for specific purposes due to the narrow range of detectable pressure (under tens of kPa) and the difficulty of forming highly integrated arrays. However, it is essential to develop tactile pressure sensors with a wide pressure range in order to use them for diverse application areas including medical diagnosis, robotics or automotive electronics. Here we report an unconventional approach for fabricating fully integrated active-matrix arrays of pressure-sensitive graphene transistors with air-dielectric layers simply formed by folding two opposing panels. Furthermore, this realizes a wide tactile pressure sensing range from 250 Pa to ∼3 MPa. Additionally, fabrication of pressure sensor arrays and transparent pressure sensors are demonstrated, suggesting their substantial promise as next-generation electronics.
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Sung-Ho
authors.initials: SH
authors.lastname: Shin
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Sangyoon
authors.initials: S
authors.lastname: Ji
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Seiho
authors.initials: S
authors.lastname: Choi
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Kyoung-Hee
authors.initials: KH
authors.lastname: Pyo
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Byeong
authors.initials: B
authors.lastname: Wan An
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Jihun
authors.initials: J
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Joohee
authors.initials: J
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Ju-Young
authors.initials: JY
authors.lastname: Kim
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Ki-Suk
authors.identifier: 0000-0002-2063-8007
authors.initials: KS
authors.lastname: Lee
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Soon-Yong
authors.initials: SY
authors.lastname: Kwon
authors.affiliation: Department of Materials Science and Engineering and Optoelectronic Convergence Research Center, Chonnam National University, Gwangju 500-757, Republic of Korea.
authors.forename: Jaeyeong
authors.initials: J
authors.lastname: Heo
authors.affiliation: Department of Materials Science and Engineering and KI for Nanocentury, KAIST, Daejeon 34141, Republic of Korea.
authors.forename: Byong-Guk
authors.identifier: 0000-0001-8813-7025
authors.initials: BG
authors.lastname: Park
authors.affiliation: School of Materials Science and Engineering, SDC-UNIST Research Center, Ulsan National Institute of Science and Technology (UNIST), Ulsan 689-798, Republic of Korea.
authors.forename: Jang-Ung
authors.initials: JU
authors.lastname: Park