title: Gate-Controlled BP-WSe2Heterojunction Diode for Logic Rectifiers and Logic Optoelectronics.
abstract: p-n junctions play an important role in modern semiconductor electronics and optoelectronics, and field-effect transistors are often used for logic circuits. Here, gate-controlled logic rectifiers and logic optoelectronic devices based on stacked black phosphorus (BP) and tungsten diselenide (WSe2) heterojunctions are reported. The gate-tunable ambipolar charge carriers in BP and WSe2enable a flexible, dynamic, and wide modulation on the heterojunctions as isotype (p-p and n-n) and anisotype (p-n) diodes, which exhibit disparate rectifying and photovoltaic properties. Based on such characteristics, it is demonstrated that BP-WSe2heterojunction diodes can be developed for high-performance logic rectifiers and logic optoelectronic devices. Logic optoelectronic devices can convert a light signal to an electric one by applied gate voltages. This work should be helpful to expand the applications of 2D crystals.
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
authors.forename: Dong
authors.initials: D
authors.lastname: Li
authors.affiliation: Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
authors.forename: Biao
authors.initials: B
authors.lastname: Wang
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
authors.forename: Mingyuan
authors.initials: M
authors.lastname: Chen
authors.affiliation: Center for Phononics and Thermal Energy Science, School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.
authors.forename: Jun
authors.initials: J
authors.lastname: Zhou
authors.affiliation: Shanghai Key Laboratory of Special Artificial Microstructure Materials and School of Physics Science and Engineering, Tongji University, Shanghai, 200092, China.|The Institute of Dongguan-Tongji University, Dongguan, 523808, China.
authors.forename: Zengxing
authors.initials: Z
authors.lastname: Zhang
keywords: 2D materials; black phosphorus; heterojunctions; logic device; tungsten diselenide