title: High-detectivity ultraviolet photodetectors based on laterally mesoporous GaN.
abstract: Photodetectors for the ultraviolet (UV) range of the electromagnetic spectrum are in great demand for several technologies, but require the development of novel device structures and materials. Here we report on the high detectivity of UV photodetectors based on well-ordered laterally mesoporous GaN. The specific detectivity of our devices under UV-illumination reaches values of up to 5.3 × 1014Jones. We attribute this high specific detectivity to the properties of the mesoporous GaN/metal contact interface: the trapping of photo-generated holes at the interface lowers the Schottky barrier height thus causing a large internal gain. High detectivity along with a simple fabrication process endows these laterally mesoporous GaN photodetectors with great potential for applications that require selective detection of weak optical signals in the UV range.
authors.affiliation: Semiconductor Lighting Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Haidian District, Beijing, 100083, P. R. China. lxzhao@semi.ac.cn.
authors.forename: Lei
authors.initials: L
authors.lastname: Liu
authors.forename: Chao
authors.initials: C
authors.lastname: Yang
authors.forename: Amalia
authors.initials: A
authors.lastname: Patanè
authors.forename: Zhiguo
authors.initials: Z
authors.lastname: Yu
authors.forename: Faguang
authors.initials: F
authors.lastname: Yan
authors.forename: Kaiyou
authors.initials: K
authors.lastname: Wang
authors.forename: Hongxi
authors.initials: H
authors.lastname: Lu
authors.forename: Jinmin
authors.initials: J
authors.lastname: Li
authors.forename: Lixia
authors.initials: L
authors.lastname: Zhao