title: Tunable Wetting Property in Growth Mode-Controlled WS2Thin Films.
abstract: We report on a thickness-dependent wetting property of WS2/Al2O3and WS2/SiO2/Si structures. We prepared WS2films with gradient thickness by annealing thickness-controlled WO3films at 800 °C in sulfur atmosphere. Raman spectroscopy measurements showed step-like variation in the thickness of WS2over substrates several centimeters in dimension. On fresh surfaces, we observed a significant change in the water contact angle depending on film thickness and substrate. Transmission electron microscopy analysis showed that differences in the surface roughness of WS2films can account for the contrasting wetting properties between WS2/Al2O3and WS2/SiO2/Si. The thickness dependence of water contact angle persisted for longer than 2 weeks, which demonstrates the stability of these wetting properties when exposed to air contamination.
authors.affiliation: Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
authors.forename: Byoung Ki
authors.initials: BK
authors.lastname: Choi
authors.affiliation: Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
authors.forename: In Hak
authors.initials: IH
authors.lastname: Lee
authors.affiliation: Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea.
authors.forename: Jiho
authors.initials: J
authors.lastname: Kim
authors.affiliation: Department of Physics, University of Seoul, Seoul, 02504, Republic of Korea. yjchang@uos.ac.kr.
authors.forename: Young Jun
authors.identifier: http://orcid.org/0000-0001-5538-0643
authors.initials: YJ
authors.lastname: Chang
keywords: Chemical vapor deposition; Morphology control; Raman spectroscopy; Transmission electron microscopy; WS2; Wetting property