title: Unraveling the Issue of Ag Migration in Printable Source/Drain Electrodes Compatible with Versatile Solution-Processed Oxide Semiconductors for Printed Thin-Film Transistor Applications.
abstract: In recent decades, solution-processable, printable oxide thin-film transistors have garnered a tremendous amount of attention given their potential for use in low-cost, large-area electronics. However, printable metallic source/drain electrodes undergo undesirable electrical/thermal migration at an interfacial stack of the oxide semiconductor and metal electrode. In this study, we report oleic acid-capped Ag nanoparticles that effectively suppress the significant Ag migration and facilitate high field-effect mobilities in oxide transistors. The origin of the role of surface-capped Ag nanoparticles is clarified with comparative studies based on X-ray photoelectron spectroscopy and X-ray absorption spectroscopy.
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.|Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea.
authors.forename: Gyu Ri
authors.initials: GR
authors.lastname: Hong
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Sun Sook
authors.initials: SS
authors.lastname: Lee
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Hye Jin
authors.initials: HJ
authors.lastname: Park
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Yejin
authors.initials: Y
authors.lastname: Jo
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Ju Young
authors.initials: JY
authors.lastname: Kim
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Hoi Sung
authors.initials: HS
authors.lastname: Lee
authors.affiliation: Department of Materials Science and Engineering, Korea University , Seoul 136-713, Republic of Korea.
authors.forename: Yun Chan
authors.identifier: http://orcid.org/0000-0001-5769-5761
authors.initials: YC
authors.lastname: Kang
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Beyong-Hwan
authors.initials: BH
authors.lastname: Ryu
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul, 100-715, Korea.
authors.forename: Aeran
authors.initials: A
authors.lastname: Song
authors.affiliation: Division of Physics and Semiconductor Science, Dongguk University , Seoul, 100-715, Korea.
authors.forename: Kwun-Bum
authors.initials: KB
authors.lastname: Chung
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Youngmin
authors.initials: Y
authors.lastname: Choi
authors.affiliation: Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT) , 141 Kajeongro, Daejeon 305-600, Republic of Korea.
authors.forename: Sunho
authors.identifier: http://orcid.org/0000-0002-5969-1614
authors.initials: S
authors.lastname: Jeong
keywords: Ag; migration; print; solution-process; transistor