title: Injection-modulated polarity conversion by charge carrier density control via a self-assembled monolayer for all-solution-processed organic field-effect transistors.
abstract: We demonstrated modulation of charge carrier densities in all-solution-processed organic field-effect transistors (OFETs) by modifying the injection properties with self-assembled monolayers (SAMs). The all-solution-processed OFETs based on an n-type polymer with inkjet-printed Ag electrodes were fabricated as a test platform, and the injection properties were modified by the SAMs. Two types of SAMs with different dipole direction, thiophenol (TP) and pentafluorobenzene thiol (PFBT) were employed, modifying the work function of the inkjet-printed Ag (4.9 eV) to 4.66 eV and 5.24 eV with TP and PFBT treatments, respectively. The charge carrier densities were controlled by the SAM treatment in both dominant and non-dominant carrier-channel regimes. This work demonstrates that control of the charge carrier densities can be efficiently achieved by modifying the injection property with SAM treatment; thus, this approach can achieve polarity conversion of the OFETs.
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.
authors.forename: Jeongkyun
authors.initials: J
authors.lastname: Roh
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.
authors.forename: Taesoo
authors.initials: T
authors.lastname: Lee
authors.affiliation: IT Convergence Technology Research Laboratory, Electronics and Telecommunications Research Institute, Deajeon, Korea.
authors.forename: Chan-Mo
authors.initials: CM
authors.lastname: Kang
authors.affiliation: Department of Electrical and Computer Engineering, University of Seoul, 163 Seoulsiripdaero, Dongdaemun-gu, Seoul 02504, Korea.
authors.forename: Jeonghun
authors.initials: J
authors.lastname: Kwak
authors.affiliation: ITODYS, CNRS UMR 7086, Université Paris Diderot (Paris7), 15 rue Jean-Antoine de Baïf, 75205 Paris Cedex 13, France.
authors.forename: Philippe
authors.initials: P
authors.lastname: Lang
authors.affiliation: LPICM, Ecole Polytechnique, CNRS, 91128 Palaiseau, France.
authors.forename: Gilles
authors.initials: G
authors.lastname: Horowitz
authors.affiliation: Construction Equipment Technology Center, Korea Institute of Industrial Technology (KITECH), Hayang-ro 13-13, Gyeongsan 38430, Korea.
authors.forename: Hyeok
authors.initials: H
authors.lastname: Kim
authors.affiliation: Department of Electrical and Computer Engineering, Inter-University Semiconductor Research Center, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul 08826, Korea.
authors.forename: Changhee
authors.initials: C
authors.lastname: Lee