title: Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2.
abstract: Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer "orbitronic" re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2shows resistance switching arising from an interplay of both IP and OP correlations.
authors.affiliation: Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia.|Jozef Stefan International Postgraduate School, Jamova 39, 1000 Ljubljana, Slovenia.
authors.forename: Damjan
authors.initials: D
authors.lastname: Svetin
authors.affiliation: Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia.|CENN-Nanocenter, Jamova 39, 1000 Ljubljana, Slovenia.
authors.forename: Igor
authors.initials: I
authors.lastname: Vaskivskyi
authors.affiliation: Laboratory of Theoretical Physics and Statistical Models LPTMS-CNRS, UMR 8626, Université Paris-Sud Paris-Saclay, F-91405 Orsay, France.
authors.forename: Serguei
authors.initials: S
authors.lastname: Brazovskii
authors.affiliation: Jozef Stefan Institute, Jamova 39, 1000 Ljubljana, Slovenia.|Jozef Stefan International Postgraduate School, Jamova 39, 1000 Ljubljana, Slovenia.|CENN-Nanocenter, Jamova 39, 1000 Ljubljana, Slovenia.
authors.forename: Dragan
authors.initials: D
authors.lastname: Mihailovic
mesh_terms: D018011:Chalcogens / Q000737:chemistry*; D017097:Electric Impedance; D004583:Electrons; D013696:Temperature
chemical_list: D018011:Chalcogens