title: Development of an improved Kelvin probe force microscope for accurate local potential measurements on biased electronic devices.
abstract: An improved setup for accurate near-field surface potential measurements and characterisation of biased electronic devices using the Kelvin Probe method has been developed. Using an external voltage source synchronised with the raster-scan of the KPFM-AM, this setup allows to avoid potential measurement errors of the conventional Kelvin Probe Force Microscopy in the case of in situ measurements on biased electronic devices. This improved KPFM-AM setup has been tested on silicon-based devices and organic semiconductor-based devices such as organic field effect transistors (OFETs), showing differences up to 25% compared to the standard KPFM-AM lift-mode measurement method.
authors.affiliation: Laboratoire de Recherche en Nanosciences (LRN EA4682), Université de Reims Champagne-Ardenne, Reims, France.
authors.forename: N B
authors.initials: NB
authors.lastname: Bercu
authors.affiliation: Laboratoire de Recherche en Nanosciences (LRN EA4682), Université de Reims Champagne-Ardenne, Reims, France.
authors.forename: L
authors.initials: L
authors.lastname: Giraudet
authors.affiliation: Laboratoire de Recherche en Nanosciences (LRN EA4682), Université de Reims Champagne-Ardenne, Reims, France.
authors.forename: O
authors.initials: O
authors.lastname: Simonetti
authors.affiliation: Laboratoire de Recherche en Nanosciences (LRN EA4682), Université de Reims Champagne-Ardenne, Reims, France.
authors.forename: M
authors.initials: M
authors.lastname: Molinari
keywords: Atomic force microscopy; Kelvin probe force microscopy; electrical characterisation; instrumentation; organic electronics