title: Energy Dissipation in Monolayer MoS2Electronics.
abstract: The advancement of nanoscale electronics has been limited by energy dissipation challenges for over a decade. Such limitations could be particularly severe for two-dimensional (2D) semiconductors integrated with flexible substrates or multilayered processors, both being critical thermal bottlenecks. To shed light into fundamental aspects of this problem, here we report the first direct measurement of spatially resolved temperature in functioning 2D monolayer MoS2transistors. Using Raman thermometry, we simultaneously obtain temperature maps of the device channel and its substrate. This differential measurement reveals the thermal boundary conductance of the MoS2interface with SiO2(14 ± 4 MW m-2K-1) is an order magnitude larger than previously thought, yet near the low end of known solid-solid interfaces. Our study also reveals unexpected insight into nonuniformities of the MoS2transistors (small bilayer regions) which do not cause significant self-heating, suggesting that such semiconductors are less sensitive to inhomogeneity than expected. These results provide key insights into energy dissipation of 2D semiconductors and pave the way for the future design of energy-efficient 2D electronics.
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Eilam
authors.identifier: 0000-0001-7965-459X
authors.initials: E
authors.lastname: Yalon
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Connor J
authors.initials: CJ
authors.lastname: McClellan
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Kirby K H
authors.initials: KKH
authors.lastname: Smithe
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Miguel
authors.initials: M
authors.lastname: Muñoz Rojo
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Runjie Lily
authors.initials: RL
authors.lastname: Xu
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Saurabh V
authors.initials: SV
authors.lastname: Suryavanshi
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Alex J
authors.initials: AJ
authors.lastname: Gabourie
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Christopher M
authors.identifier: 0000-0002-4705-9478
authors.initials: CM
authors.lastname: Neumann
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Feng
authors.initials: F
authors.lastname: Xiong
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Amir Barati
authors.initials: AB
authors.lastname: Farimani
authors.affiliation: Department of Electrical Engineering, ‡Department of Chemistry, §Department of Materials Science and Engineering, and ∥Precourt Institute for Energy, Stanford University , Stanford, California 94305, United States.
authors.forename: Eric
authors.initials: E
authors.lastname: Pop
keywords: 2D semiconductors; Energy dissipation; MoS2; Raman thermometry; thermal boundary conductance