title: Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3(HAO) dielectric thin layer.
abstract: An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3(BTO)/ITO ferroelectric structures when a thin HfO2:Al2O3(HAO) dielectric layer is inserted between Pt and BTO. The P-E hysteresis loops reveal the ferroelectric nature of both Pt/BTO/ITO and Pt/HAO/BTO/ITO structures. The relation between the RS and the polarization reversal is investigated at various temperatures in the Pt/HAO/BTO/ITO structure. It is found that the polarization reversal induces a barrier variation in the Pt/HAO/BTO interface and causes enhanced RS, which is suppressed at Curie temperature (Tc= 140 °C). Furthermore, the Pt/HAO/BTO/ITO structures show promising endurance characteristics, with a RS ratio >103after 109switching cycles, that make them potential candidates for resistive switching memory devices. By combining ferroelectric and dielectric layers this work provides an efficient way for developing highly efficient ferroelectric-based RS memory devices.
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.|IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal.
authors.forename: J P B
authors.initials: JP
authors.lastname: Silva
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.|Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC, Brazil.
authors.forename: F L
authors.initials: FL
authors.lastname: Faita
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.|IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal.|Department of Physics, Madanapalle Institute of Technology &Science, Madanapalle, 517325, Andhra Pradesh, India.
authors.forename: K
authors.initials: K
authors.lastname: Kamakshi
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.|Department of Physics, Central University of Tamil Nadu, Thiruvarur, 610 101, India.
authors.forename: K C
authors.initials: KC
authors.lastname: Sekhar
authors.affiliation: IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal.
authors.forename: J Agostinho
authors.initials: JA
authors.lastname: Moreira
authors.affiliation: IFIMUP and IN-Institute of Nanoscience and Nanotechnology, Departamento de Física e Astronomia, Faculdade de Ciências da Universidade do Porto, Rua do Campo Alegre 687, 4169-007 Porto, Portugal.
authors.forename: A
authors.initials: A
authors.lastname: Almeida
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
authors.forename: M
authors.initials: M
authors.lastname: Pereira
authors.affiliation: Departamento de Física, Universidade Federal de Santa Catarina, Campus Trindade, 88040-900 Florianópolis, SC, Brazil.
authors.forename: A A
authors.initials: AA
authors.lastname: Pasa
authors.affiliation: Centre of Physics, University of Minho, Campus de Gualtar, 4710-057 Braga, Portugal.
authors.forename: M J M
authors.initials: MJ
authors.lastname: Gomes