title: Metamaterial perfect absorbers with solid and inverse periodic cross structures for optoelectronic applications.
abstract: Metamaterial based on a metal/insulator/metal (MIM) tri-layer structure provides an agile platform to realize high absorption efficiency for a variety of applications including semiconductor optoelectronic detectors. In this work, we use the finite time domain difference (FDTD) method and coupled mode theory (CMT) to numerically study metal/semiconductor/metal (MSM) structures and discuss their effective absorption for optoelectronic application. We compare MSM structures with a different top metal layer design and find that cross shaped absorber (CSA) and it's complementary cross shaped absorber (CCSA) exhibit different phase diagrams due to a distinctive dependence of radiation loss on geometrical parameters. Our results show that CSA (CCSA) structures are suitable for thinner (thicker) sandwiched semiconductor with a larger (smaller) imaginary part of its dielectric constant. The necessary condition to realize a maximum figure of merit (FOM) value for effective absorption is discussed in comparison with the perfect absorber condition. Our work may provide guidelines to design the general light-harvesting optoelectronic devices with high efficiencies based on metamaterial-semiconductor hybrid systems.
authors.forename: Haochi
authors.initials: H
authors.lastname: Yu
authors.forename: Ziyi
authors.initials: Z
authors.lastname: Zhao
authors.forename: Qinbai
authors.initials: Q
authors.lastname: Qian
authors.forename: Jie
authors.initials: J
authors.lastname: Xu
authors.forename: Peng
authors.initials: P
authors.lastname: Gou
authors.forename: Yuexin
authors.initials: Y
authors.lastname: Zou
authors.forename: Jun
authors.initials: J
authors.lastname: Cao
authors.forename: Le
authors.initials: L
authors.lastname: Yang
authors.forename: Jie
authors.initials: J
authors.lastname: Qian
authors.forename: Zhenghua
authors.initials: Z
authors.lastname: An