title: Few-Layer Black Phosphorus Carbide Field-Effect Transistor via Carbon Doping.
abstract: Black phosphorus carbide (b-PC) is a new family of layered semiconducting material that has recently been predicted to have the lightest electrons and holes among all known 2D semiconductors, yielding a p-type mobility (≈105cm2V-1s-1) at room temperature that is approximately five times larger than the maximum value in black phosphorus. Here, a high-performance composite few-layer b-PC field-effect transistor fabricated via a novel carbon doping technique which achieved a high hole mobility of 1995 cm2V-1s-1at room temperature is reported. The absorption spectrum of this material covers an electromagnetic spectrum in the infrared regime not served by black phosphorus and is useful for range finding applications as the earth atmosphere has good transparency in this spectral range. Additionally, a low contact resistance of 289 Ω µm is achieved using a nickel phosphide alloy contact with an edge contacted interface via sputtering and thermal treatment.
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Wee Chong
authors.initials: WC
authors.lastname: Tan
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Yongqing
authors.initials: Y
authors.lastname: Cai
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Rui Jie
authors.initials: RJ
authors.lastname: Ng
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Li
authors.initials: L
authors.lastname: Huang
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Xuewei
authors.initials: X
authors.lastname: Feng
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Gang
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Institute of Higher Performance Computing, 1 Fusionopolis Way, 138632, Singapore.
authors.forename: Yong-Wei
authors.initials: YW
authors.lastname: Zhang
authors.affiliation: Department of Chemistry, NUS, 3 Science Drive 3, 117543, Singapore.
authors.forename: Christian A
authors.initials: CA
authors.lastname: Nijhuis
authors.affiliation: College of Materials Science and Engineering, Guangdong Research Center for Interfacial Engineering of Functional Materials, Shenzhen University, 3688 Nanhai Ave, Shenzhen, 518060, P. R. China.
authors.forename: Xinke
authors.initials: X
authors.lastname: Liu
authors.affiliation: Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore.
authors.forename: Kah-Wee
authors.initials: KW
authors.lastname: Ang
keywords: alloyed contacts; black phosphorus carbide; carbon doping; field-effect transistors; mobility