title: Review on mechanism of directly fabricating wafer-scale graphene on dielectric substrates by chemical vapor deposition.
abstract: To date, chemical vapor deposition on transition metal catalysts is a potential way to achieve low cost, high quality and uniform wafer-scale graphene. However, the removal and transfer process of the annoying catalytic metals underneath can bring large amounts of uncertain factors causing the performance deterioration of graphene, such as the pollution of surface polymeric residues, unmentioned doping and structural damages. Thus, to develop a technique of directly fabricating graphene on dielectric substrates is quite meaningful. In this review, we will present specific methods of catalyst- or transfer-free techniques for graphene growth and discuss the diversity of growth mechanisms.
authors.affiliation: Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, People's Republic of China. Shaanxi Joint Laboratory of Graphene (Xidian University), Xi'an 710071, People's Republic of China.
authors.forename: Jing
authors.initials: J
authors.lastname: Ning
authors.forename: Dong
authors.initials: D
authors.lastname: Wang
authors.forename: Yang
authors.initials: Y
authors.lastname: Chai
authors.forename: Xin
authors.initials: X
authors.lastname: Feng
authors.forename: Meishan
authors.initials: M
authors.lastname: Mu
authors.forename: Lixin
authors.initials: L
authors.lastname: Guo
authors.forename: Jincheng
authors.initials: J
authors.lastname: Zhang
authors.forename: Yue
authors.initials: Y
authors.lastname: Hao