title: Quantifying Plasmon-Enhanced Light Absorption in Monolayer WS2Films.
abstract: Transition metal dichalcogenide semiconductors hold great promise in photonic and optoelectronic applications, such as flexible solar cells and ultrafast photodetectors, because of their direct band gap and few-atom thicknesses. However, it is crucial to understand and improve the absorption characteristics of these monolayer semiconducting materials. In this study, we conducted a systematic numerical and experimental investigation to demonstrate and quantify absorption enhancement in WS2monolayer films, in the presence of silver plasmonic nanodisk arrays. Our analysis combining full-field electromagnetic simulations and optical absorption spectroscopy measurements indicates a fourfold enhancement in the absorption of an WS2film near its band edge, close to the plasmonic resonance wavelength of Ag nanodisk arrays. The proposed Ag/WS2heterostructure exhibited a 2.5-fold enhancement in calculated short-circuit current. Such hybrid plasmonic or two-dimensional (2D) materials with enhanced absorption pave the way for the practical realization of 2D optoelectronic devices, including ultrafast photodetectors and solar cells.
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Serkan
authors.identifier: http://orcid.org/0000-0001-6349-9185
authors.initials: S
authors.lastname: Butun
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Edgar
authors.initials: E
authors.lastname: Palacios
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Jeffrey D
authors.initials: JD
authors.lastname: Cain
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Zizhuo
authors.initials: Z
authors.lastname: Liu
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Vinayak P
authors.identifier: http://orcid.org/0000-0002-6007-3063
authors.initials: VP
authors.lastname: Dravid
authors.affiliation: Department of Electrical Engineering and Computer Science, ‡Department of Materials Science and Engineering, and §International Institute for Nanotechnology (IIN) Northwestern University , Evanston, Illinois 60208, United States.
authors.forename: Koray
authors.identifier: http://orcid.org/0000-0002-3268-2216
authors.initials: K
authors.lastname: Aydin
keywords: 2D materials; Transition-metal dichalcogenides; WS2; absorption enhancement; plasmonics