title: Relating surface roughness and magnetic domain structure to giant magneto-impedance of Co-rich melt-extracted microwires.
abstract: Understanding the relationship between the surface conditions and giant magneto-impedance (GMI) in Co-rich melt-extracted microwires is key to optimizing their magnetic responses for magnetic sensor applications. The surface magnetic domain structure (SMDS) parameters of ~45 μm diameter Co69.25Fe4.25Si13B13.5-xZrx(x = 0, 1, 2, 3) microwires, including the magnetic domain period (d) and surface roughness (Rq) as extracted from the magnetic force microscopy (MFM) images, have been correlated with GMI in the range 1-1000 MHz. It was found that substitution of B with 1 at. % Zr increased d of the base alloy from 729 to 740 nm while retaining Rqfrom ~1 nm to ~3 nm. A tremendous impact on the GMI ratio was found, increasing the ratio from ~360% to ~490% at an operating frequency of 40 MHz. Further substitution with Zr decreased the high frequency GMI ratio, which can be understood by the significant increase in surface roughness evident by force microscopy. This study demonstrates the application of the domain period and surface roughness found by force microscopy to the interpretation of the GMI in Co-rich microwires.
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: S D
authors.initials: SD
authors.lastname: Jiang
authors.affiliation: Department of Physics, University of South Florida, Tampa, FL 33620, USA.
authors.forename: T
authors.initials: T
authors.lastname: Eggers
authors.affiliation: Department of Physics, University of South Florida, Tampa, FL 33620, USA.
authors.forename: O
authors.initials: O
authors.lastname: Thiabgoh
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: D W
authors.initials: DW
authors.lastname: Xing
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: W D
authors.initials: WD
authors.lastname: Fei
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.|Department of Physics, University of South Florida, Tampa, FL 33620, USA.
authors.forename: H X
authors.initials: HX
authors.lastname: Shen
authors.affiliation: School of Materials Science and Engineering, Inner Mongolia University of Technology, Hohhot 010051, P. R. China.
authors.forename: J S
authors.initials: JS
authors.lastname: Liu
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: J R
authors.initials: JR
authors.lastname: Zhang
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.|School of Materials Science and Engineering, Harbin University of Science and Technology, Harbin 150080, P. R. China.
authors.forename: W B
authors.initials: WB
authors.lastname: Fang
authors.affiliation: School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, P. R. China.
authors.forename: J F
authors.initials: JF
authors.lastname: Sun
authors.affiliation: Department of Physics, University of South Florida, Tampa, FL 33620, USA.
authors.forename: H
authors.initials: H
authors.lastname: Srikanth
authors.affiliation: Department of Physics, University of South Florida, Tampa, FL 33620, USA.
authors.forename: M H
authors.initials: MH
authors.lastname: Phan