title: Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE.
abstract: Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire substrates by metal-organic vapor phase epitaxy (MOVPE). The structural and optical properties were carefully characterized and discussed. The thick layers exhibited strong band-edge absorption near 215 nm. A highly oriented two-dimensional h-BN structure was formed at the film/sapphire interface, which permitted an effective exfoliation of the thick BN film onto other adhesive supports. And this structure resulted in a metal-semiconductor-metal (MSM) device prototype fabricated on BN membrane delaminating from the substrate. MSM photodiode prototype showed low dark current of 2 nA under 100 V, and 100 ± 20% photoconductivity yield for deep UV light illumination. These wafer-scale MOVPE-grown thick BN layers present great potential for the development of deep UV photodetection applications, and even for flexible (opto-) electronics in the future.
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.
authors.forename: Xin
authors.initials: X
authors.lastname: Li
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.
authors.forename: Matthew B
authors.initials: MB
authors.lastname: Jordan
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.
authors.forename: Taha
authors.initials: T
authors.lastname: Ayari
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.
authors.forename: Suresh
authors.initials: S
authors.lastname: Sundaram
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.
authors.forename: Youssef
authors.initials: Y
authors.lastname: El Gmili
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.|CEA-LETI, Minatec Campus, F-38054, Grenoble, France.
authors.forename: Saiful
authors.initials: S
authors.lastname: Alam
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.
authors.forename: Muhbub
authors.initials: M
authors.lastname: Alam
authors.affiliation: Centre de Nanosciences et de Nanotechnologies, Université Paris-Saclay, C2N - Site de Marcoussis, route de Nozay, F-91460, Marcoussis, France.
authors.forename: Gilles
authors.initials: G
authors.lastname: Patriarche
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France.
authors.forename: Paul L
authors.initials: PL
authors.lastname: Voss
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France.|Université de Lorraine, LMOPS, EA 4423, 57070, Metz, France.
authors.forename: Jean
authors.initials: J
authors.lastname: Paul Salvestrini
authors.affiliation: UMI 2958, Georgia Tech - CNRS, 57070, Metz, France. aougazza@georgiatech-metz.fr.|Georgia Institute of Technology, School of Electrical and Computer Engineering, GT-Lorraine, 57070, Metz, France. aougazza@georgiatech-metz.fr.
authors.forename: Abdallah
authors.initials: A
authors.lastname: Ougazzaden