title: Electrical spin injection and detection in molybdenum disulfide multilayer channel.
abstract: Molybdenum disulfide has recently emerged as a promising two-dimensional semiconducting material for nano-electronic, opto-electronic and spintronic applications. However, the demonstration of an electron spin transport through a semiconducting MoS2channel remains challenging. Here we show the evidence of the electrical spin injection and detection in the conduction band of a multilayer MoS2semiconducting channel using a two-terminal spin-valve configuration geometry. A magnetoresistance around 1% has been observed through a 450 nm long, 6 monolayer thick MoS2channel with a Co/MgO tunnelling spin injector and detector. It is found that keeping a good balance between the interface resistance and channel resistance is mandatory for the observation of the two-terminal magnetoresistance. Moreover, the electron spin-relaxation is found to be greatly suppressed in the multilayer MoS2channel with an in-plane spin polarization. The long spin diffusion length (approximately ∼235 nm) could open a new avenue for spintronic applications using multilayer transition metal dichalcogenides.
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Shiheng
authors.initials: S
authors.lastname: Liang
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Huaiwen
authors.initials: H
authors.lastname: Yang
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France.
authors.forename: Pierre
authors.initials: P
authors.lastname: Renucci
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Bingshan
authors.initials: B
authors.lastname: Tao
authors.affiliation: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.
authors.forename: Piotr
authors.initials: P
authors.lastname: Laczkowski
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Stefan
authors.initials: S
authors.lastname: Mc-Murtry
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France.
authors.forename: Gang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Université de Toulouse, INSA-CNRS-UPS, LPCNO, 135 avenue de Rangueil, 31077 Toulouse, France.
authors.forename: Xavier
authors.initials: X
authors.lastname: Marie
authors.affiliation: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.
authors.forename: Jean-Marie
authors.initials: JM
authors.lastname: George
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Sébastien
authors.initials: S
authors.lastname: Petit-Watelot
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Abdelhak
authors.initials: A
authors.lastname: Djeffal
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Stéphane
authors.initials: S
authors.lastname: Mangin
authors.affiliation: Unité Mixte de Physique, CNRS, Thales, Univ. Paris-Sud, Université Paris-Saclay, 91767 Palaiseau, France.
authors.forename: Henri
authors.initials: H
authors.lastname: Jaffrès
authors.affiliation: Institut Jean Lamour, UMR 7198, CNRS-Université de Lorraine, BP 239, 54506 Vandœuvre, France.
authors.forename: Yuan
authors.initials: Y
authors.lastname: Lu