title: Effects of a piezoelectric substrate on phonon-drag thermopower in monolayer graphene.
abstract: The phonon-drag thermopower is studied in a monolayer graphene on a piezoelectric substrate. The phonon-drag contribution [Formula: see text] from the extrinsic potential of piezoelectric surface acoustic (PA) phonons of a piezoelectric substrate (GaAs) is calculated as a function of temperature T and electron concentration ns. At a very low temperature, [Formula: see text] is found to be much greater than [Formula: see text] of the intrinsic deformation potential of acoustic (DA) phonons of the graphene. There is a crossover of [Formula: see text] and [Formula: see text] at around ~5 K. In graphene samples of about  >10 µm size, we predict Sg~ 20 µV at 10 K, which is much greater than the diffusion component of the thermopower and can be experimentally observed. In the Bloch-Gruneisen (BG) regime T and nsdependence are, respectively, given by the power laws [Formula: see text] ([Formula: see text]) ~ T2(T3) and [Formula: see text], [Formula: see text] ~ [Formula: see text]. The T(ns) dependence is the manifestation of the 2D phonons (Dirac phase of the electrons). The effect of the screening is discussed. Analogous to Herring's law (Sgμp~ T-1), we predict a new relation Sgμp~ [Formula: see text], where μpis the phonon-limited mobility. We suggest that the nsdependent measurements will play a more significant role in identifying the Dirac phase and the effect of screening.
authors.affiliation: Cavendish Laboratory, Department of Physics, University of Cambridge, Cambridge CB3 0HE, United Kingdom. Permanent address: Department of Physics, Siddaganga Institute of Technology, Tumkur 572013, Karnataka, India.
authors.forename: K S
authors.initials: KS
authors.lastname: Bhargavi
authors.forename: S S
authors.initials: SS
authors.lastname: Kubakaddi
authors.forename: C J B
authors.initials: CJB
authors.lastname: Ford