title: 33 W continuous output power semiconductor disk laser emitting at 1275 nm.
abstract: We demonstrate a semiconductor disk laser emitting at 1275nm, employing a wafer fused AlInGaAs/InP-AlAs/GaAs gain mirror. A built-in Au-reflector was used to reflect the pump light not absorbed in a single pass through the gain chip active region. The laser exhibited an output power of 33 W for a pump spot with a diameter of 0.86 mm, an output coupler of 2.5%, and a heat-sink temperature of -5°C. When the temperature of the heat-sink was increased to 15 °C, the maximum output power reached a value of ~24 W. The study reveals that the wafer fused gain mirrors have a high optical quality and good uniformity enabling scaling of the maximum emitted power with the diameter of the pump spot, i.e. at least up to the 1 mm diameter.
authors.forename: Tomi
authors.initials: T
authors.lastname: Leinonen
authors.forename: Vladimir
authors.initials: V
authors.lastname: Iakovlev
authors.forename: Alexei
authors.initials: A
authors.lastname: Sirbu
authors.forename: Eli
authors.initials: E
authors.lastname: Kapon
authors.forename: Mircea
authors.initials: M
authors.lastname: Guina