title: Non-contact scanning probe technique for electric field measurements based on nanowire field-effect transistor.
abstract: We report on the new active tip for scanning probe microscopy allowing the simultaneous measurements of surface topography and its potential profile. We designed and fabricated a field-effect transistor with nanowire channel located on the apex of silicon-on-insulator small chip. The field-effect transistor with nanowire channel was selected due to its extremely high electric field sensitivity even at room temperature. We developed the scanning probe operated in the tuning fork regime and demonstrated its reasonable spatial and field resolution. The proposed device can be a unique tool for high-sensitive, high-resolution, non-destructive potential profile mapping of nanoscale objects in physics, biology and material science. We discuss the ways to optimize the sensor charge sensitivity to the theoretical limit which is 10-3e/Hz-1/2at room temperature.
authors.affiliation: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 1(2), Leninskie Gory, GSP-1, Moscow 119991, Russia; Physics Faculty, Lomonosov Moscow State University, Moscow 119991, Russia. Electronic address: trifonov.artem@phys.msu.ru.
authors.forename: A S
authors.initials: AS
authors.lastname: Trifonov
authors.affiliation: Skobeltsyn Institute of Nuclear Physics, Lomonosov Moscow State University, 1(2), Leninskie Gory, GSP-1, Moscow 119991, Russia; Physics Faculty, Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: D E
authors.initials: DE
authors.lastname: Presnov
authors.affiliation: Physics Faculty, Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: I V
authors.initials: IV
authors.lastname: Bozhev
authors.affiliation: AIST-NT Inc, 359 Bel Marin Keys Blvd, Suite 20, Novato, California, 94949, USA.
authors.forename: D A
authors.initials: DA
authors.lastname: Evplov
authors.affiliation: Group for Advanced Receiver Development, Department of Earth and Space Science, Chalmers University of Technology, 41296 Göteborg, Sweden.
authors.forename: V
authors.initials: V
authors.lastname: Desmaris
authors.affiliation: Physics Faculty, Lomonosov Moscow State University, Moscow 119991, Russia.
authors.forename: V A
authors.initials: VA
authors.lastname: Krupenin