title: Deterministic Switching of Perpendicular Magnetic Anisotropy by Voltage Control of Spin Reorientation Transition in (Co/Pt)3/Pb(Mg1/3Nb2/3)O3-PbTiO3Multiferroic Heterostructures.
abstract: One of the central challenges in realizing multiferroics-based magnetoelectric memories is to switch perpendicular magnetic anisotropy (PMA) with a control voltage. In this study, we demonstrate electrical flipping of magnetization between the out-of-plane and the in-plane directions in (Co/Pt)3/(011) Pb(Mg1/3Nb2/3)O3-PbTiO3multiferroic heterostructures through a voltage-controllable spin reorientation transition (SRT). The SRT onset temperature can be dramatically suppressed at least 200 K by applying an electric field, accompanied by a giant electric-field-induced effective magnetic anisotropy field (ΔHeff) up to 1100 Oe at 100 K. In comparison with conventional strain-mediated magnetoelastic coupling that provides a ΔHeffof only 110 Oe, that enormous effective field is mainly related to the interface effect of electric field modification of spin-orbit coupling from Co/Pt interfacial hybridization via strain. Moreover, electric field control of SRT is also achieved at room temperature, resulting in a ΔHeffof nearly 550 Oe. In addition, ferroelastically nonvolatile switching of PMA has been demonstrated in this system. E-field control of PMA and SRT in multiferroic heterostructures not only provides a platform to study strain effect and interfacial effect on magnetic anisotropy of the ultrathin ferromagnetic films but also enables the realization of power efficient PMA magnetoelectric and spintronic devices.
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Bin
authors.identifier: 0000-0002-3501-722X
authors.initials: B
authors.lastname: Peng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Ziyao
authors.initials: Z
authors.lastname: Zhou
authors.affiliation: Department of Electrical and Computer Engineering, Northeastern University , 360 Huntington Avenue, Boston, Massachusetts 02115, United States.
authors.forename: Tianxiang
authors.initials: T
authors.lastname: Nan
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Guohua
authors.initials: G
authors.lastname: Dong
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Mengmeng
authors.initials: M
authors.lastname: Feng
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Qu
authors.initials: Q
authors.lastname: Yang
authors.affiliation: Department of Electrical and Computer Engineering, Northeastern University , 360 Huntington Avenue, Boston, Massachusetts 02115, United States.
authors.forename: Xinjun
authors.initials: X
authors.lastname: Wang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Shishun
authors.initials: S
authors.lastname: Zhao
authors.affiliation: Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Dan
authors.initials: D
authors.lastname: Xian
authors.affiliation: Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Zhuang-De
authors.initials: ZD
authors.lastname: Jiang
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.|Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Wei
authors.initials: W
authors.lastname: Ren
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.|Department of Chemistry and 4D LABS, Simon Fraser University , Burnaby, British Columbia V5A 1S6, Canada.
authors.forename: Zuo-Guang
authors.identifier: 0000-0003-2378-7304
authors.initials: ZG
authors.lastname: Ye
authors.affiliation: Department of Electrical and Computer Engineering, Northeastern University , 360 Huntington Avenue, Boston, Massachusetts 02115, United States.
authors.forename: Nian X
authors.initials: NX
authors.lastname: Sun
authors.affiliation: Electronic Materials Research Laboratory, Key Laboratory of the Ministry of Education & International Center for Dielectric Research, Xi'an Jiaotong University , Xi'an 710049, China.|Collaborative Innovation Center of High-End Manufacturing Equipment, Xi'an Jiaotong University , Xi'an 710049, China.
authors.forename: Ming
authors.identifier: 0000-0002-6310-948X
authors.initials: M
authors.lastname: Liu
keywords: ferromagnetic resonance; magnetoelectric coupling; multiferroic heterostructure; perpendicular magnetic anisotropy; spin reorientation transition; spin−orbit coupling