title: Controllable crystal growth and fast reversible crystallization-to-amorphization in Sb2Te-TiO2films.
abstract: The structure evolution and crystallization processes of Sb2Te-TiO2films have been investigated. The Sb2Te-rich nanocrystals, surrounded by TiO2amorphous phases, are observed in the annealed Sb2Te-TiO2composite films. The segregated domains exhibit obvious chalcogenide/TiOxinterfaces, which elevate crystallization temperature, impede the grain growth and increase crystalline resistance. Compared with that in conventional Ge2Sb2Te5film, the shorter time for onset crystallization (25 ns) and amorphization (100 ns) has been achieved in as-deposited (Sb2Te)94.7(TiO2)5.3film under 60 mW laser irradiation. The corresponding recrystallization and re-amorphization can also be realized in the film. From Johnson-Mehl-Avrami (JMA) analysis, it is further found that the one-dimensional grain growth with controlled interface is dominant for the film during the fast phase-change process. Therefore, (Sb2Te)94.7(TiO2)5.3film with improved crystallization mechanism is promising for high-stable and fast-speed memory applications.
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Guoxiang
authors.initials: G
authors.lastname: Wang
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Chao
authors.initials: C
authors.lastname: Li
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Daotian
authors.initials: D
authors.lastname: Shi
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Qiuhua
authors.initials: Q
authors.lastname: Nie
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Hui
authors.initials: H
authors.lastname: Wang
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Xiang
authors.initials: X
authors.lastname: Shen
authors.affiliation: Laboratory of Infrared Material and Devices, The Research Institute of Advanced Technologies, Ningbo University, Ningbo 315211, China.|Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province, Ningbo, 315211, China.
authors.forename: Yegang
authors.initials: Y
authors.lastname: Lu