title: Influence of structure geometry on THz emission from Black Silicon surfaces fabricated by reactive ion etching.
abstract: The influence of structure geometry on THz emission from Black Silicon (BS) surfaces fabricated by reactive ion etching (RIE) has been investigated by a comprehensive study including optical simulations, optical-pump THz probe and THz emission studies. A strong enhancement of THz emission is observed with increasing structure depth, which is mainly related to the increased number of carriers created within the silicon needles and not due to the overall absorption enhancement as previously claimed for silicon nanowires.
authors.forename: Ulrike
authors.initials: U
authors.lastname: Blumröder
authors.forename: Matthias
authors.initials: M
authors.lastname: Zilk
authors.forename: Hannes
authors.initials: H
authors.lastname: Hempel
authors.forename: Patrick
authors.initials: P
authors.lastname: Hoyer
authors.forename: Thomas
authors.initials: T
authors.lastname: Pertsch
authors.forename: Rainer
authors.initials: R
authors.lastname: Eichberger
authors.forename: Thomas
authors.initials: T
authors.lastname: Unold
authors.forename: Stefan
authors.initials: S
authors.lastname: Nolte