title: Effects of Post-Deposition Annealing on ZrO2/n-GaN MOS Capacitors with H2O and O3as the Oxidizers.
abstract: GaN-based metal-oxide-semiconductor capacitors with ZrO2as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A minimum leakage current density of 3 × 10-9A/cm2at 1 V was obtained when O3was used for the growth of ZrO2. Leakage analysis revealed that Schottky emission and Fowler-Nordheim tunneling were the main leakage mechanisms.
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
authors.forename: Meijuan
authors.initials: M
authors.lastname: Zheng
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
authors.forename: Guozhen
authors.initials: G
authors.lastname: Zhang
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
authors.forename: Xiao
authors.initials: X
authors.lastname: Wang
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China.
authors.forename: Jiaxian
authors.initials: J
authors.lastname: Wan
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China. h.wu@whu.edu.cn.
authors.forename: Hao
authors.initials: H
authors.lastname: Wu
authors.affiliation: Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, China. chang.liu@whu.edu.cn.
authors.forename: Chang
authors.initials: C
authors.lastname: Liu
keywords: Atomic layer deposition; GaN; MOS; Post-annealing; ZrO2