title: Monolithic integration of InGaAs n-FETs and lasers on Ge substrate.
abstract: We report the first monolithic integration of InGaAs channel field-effect transistors with InGaAs/GaAs multiple quantum wells (MQWs) lasers on a common platform, achieving a milestone in the path of enabling low power and high speed opto-electronic integrated circuits (OEICs). The III-V layers used for realizing transistors and lasers were grown epitaxially on the Ge substrate using molecular beam epitaxy (MBE). A Si-CMOS compatible process was developed to realize InGaAs n-FETs with subthreshold swing SS of 93 mV/decade, ION/IOFFratio of more than 4 orders of magnitude with very low off-state leakage current, and a peak effective mobility of more than 2000 cm2/V·s. In addition, fabrication process uses a low overall processing temperature (≤ 400 °C) to maintain the high quality of the InGaAs/GaAs MQWs for the laser. Room temperature electrically-pumped lasers with a lasing wavelength of 1.03 µm and a linewidth of less than 1.7 nm were realized.
authors.forename: Annie
authors.initials: A
authors.lastname: Kumar
authors.forename: Shuh-Ying
authors.initials: SY
authors.lastname: Lee
authors.forename: Sachin
authors.initials: S
authors.lastname: Yadav
authors.forename: Kian Hua
authors.initials: KH
authors.lastname: Tan
authors.forename: Wan Khai
authors.initials: WK
authors.lastname: Loke
authors.forename: Satrio
authors.initials: S
authors.lastname: Wicaksono
authors.forename: Daosheng
authors.initials: D
authors.lastname: Li
authors.forename: Saeid Masudy
authors.initials: SM
authors.lastname: Panah
authors.forename: Gengchiau
authors.initials: G
authors.lastname: Liang
authors.forename: Soon-Fatt
authors.initials: SF
authors.lastname: Yoon
authors.forename: Xiao
authors.initials: X
authors.lastname: Gong
authors.forename: Dimitri
authors.initials: D
authors.lastname: Antoniadis
authors.forename: Yee-Chia
authors.initials: YC
authors.lastname: Yeo