title: Room temperature multiplexed gas sensing using chemical-sensitive 3.5-nm-thin silicon transistors.
abstract: There is great interest in developing a low-power gas sensing technology that can sensitively and selectively quantify the chemical composition of a target atmosphere. Nanomaterials have emerged as extremely promising candidates for this technology due to their inherent low-dimensional nature and high surface-to-volume ratio. Among these, nanoscale silicon is of great interest because pristine silicon is largely inert on its own in the context of gas sensing, unless functionalized with an appropriate gas-sensitive material. We report a chemical-sensitive field-effect transistor (CS-FET) platform based on 3.5-nm-thin silicon channel transistors. Using industry-compatible processing techniques, the conventional electrically active gate stack is replaced by an ultrathin chemical-sensitive layer that is electrically nonconducting and coupled to the 3.5-nm-thin silicon channel. We demonstrate a low-power, sensitive, and selective multiplexed gas sensing technology using this platform by detecting H2S, H2, and NO2at room temperature for environment, health, and safety in the oil and gas industry, offering significant advantages over existing technology. Moreover, the system described here can be readily integrated with mobile electronics for distributed sensor networks in environmental pollution mapping and personal air-quality monitors.
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Hossain Mohammad
authors.initials: HM
authors.lastname: Fahad
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Murata Manufacturing Co. Ltd., Nagaokakyo, Kyoto 617-8555, Japan.
authors.forename: Hiroshi
authors.initials: H
authors.lastname: Shiraki
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Matin
authors.initials: M
authors.lastname: Amani
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.
authors.forename: Chuchu
authors.initials: C
authors.lastname: Zhang
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.
authors.forename: Vivek Srinivas
authors.identifier: 0000-0001-7825-8931
authors.initials: VS
authors.lastname: Hebbar
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Wei
authors.initials: W
authors.lastname: Gao
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Hiroki
authors.initials: H
authors.lastname: Ota
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Mark
authors.identifier: 0000-0003-1860-5051
authors.initials: M
authors.lastname: Hettick
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Daisuke
authors.initials: D
authors.lastname: Kiriya
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
authors.forename: Yu-Ze
authors.identifier: 0000-0001-8504-1458
authors.initials: YZ
authors.lastname: Chen
authors.affiliation: Department of Materials Science and Engineering, National Tsing Hua University, Hsinchu, Taiwan 30013, R.O.C.
authors.forename: Yu-Lun
authors.initials: YL
authors.lastname: Chueh
authors.affiliation: Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, Berkeley, CA 94720, USA.; Berkeley Sensor and Actuator Center, University of California, Berkeley, Berkeley, CA 94720, USA.; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, CA 94720, USA.
authors.forename: Ali
authors.initials: A
authors.lastname: Javey
keywords: IoT; Multi-gas sensors; low power; nanoscale; room-temperature; selective; sensitive; silicon