title: Elucidating the DEP phenomena using a volumetric polarization approach with consideration of the electric double layer.
abstract: Dielectrophoretic (DEP) phenomena have been explored to great success for various applications like particle sorting and separation. To elucidate the underlying mechanism and quantify the DEP force experienced by particles, the point-dipole and Maxwell Stress Tensor (MST) methods are commonly used. However, both methods exhibit their own limitations. For example, the point-dipole method is unable to fully capture the essence of particle-particle interactions and the MST method is not suitable for particles of non-homogeneous property. Moreover, both methods fare poorly when it comes to explaining DEP phenomena such as the dependence of crossover frequency on medium conductivity. To address these limitations, the authors have developed a new method, termed volumetric-integration method, with the aid of computational implementation, to reexamine the DEP phenomena, elucidate the governing mechanism, and quantify the DEP force. The effect of an electric double layer (EDL) on particles' crossover behavior is dealt with through consideration of the EDL structure along with surface ionic/molecular adsorption, unlike in other methods, where the EDL is accounted for through simply assigning a surface conductance value to the particles. For validation, by comparing with literature experimental data, the authors show that the new method can quantify the DEP force on not only homogeneous particles but also non-homogeneous ones, and predict particle-particle interactions fairly accurately. Moreover, the authors also show that the predicted dependence of crossover frequency on medium conductivity and particle size agrees very well with experimental measurements.
authors.forename: Yu
authors.identifier: 0000-0002-8538-9822
authors.initials: Y
authors.lastname: Zhao
authors.affiliation: Tokyo Electron Technology Center, America, LLC, US-Technology Development Center , Austin, Texas 78741 , USA.
authors.forename: Jozef
authors.initials: J
authors.lastname: Brcka
authors.affiliation: Tokyo Electron Technology Center, America, LLC, US-Technology Development Center , Austin, Texas 78741 , USA.
authors.forename: Jacques
authors.initials: J
authors.lastname: Faguet
authors.forename: Guigen
authors.initials: G
authors.lastname: Zhang