title: Flip-chip integrated silicon Mach-Zehnder modulator with a 28nm fully depleted silicon-on-insulator CMOS driver.
abstract: We present a silicon electro-optic transmitter consisting of a 28nm ultra-thin body and buried oxide fully depleted silicon-on-insulator (UTBB FD-SOI) CMOS driver flip-chip integrated onto a Mach-Zehnder modulator. The Mach-Zehnder silicon optical modulator was optimized to have a 3dB bandwidth of around 25 GHz at -1V bias and a 50 Ω impedance. The UTBB FD-SOI CMOS driver provided a large output voltage swing around 5 Vppto enable a high dynamic extinction ratio and a low device insertion loss. At 44 Gbps, the transmitter achieved a high extinction ratio of 6.4 dB at the modulator quadrature operation point. This result shows open eye diagrams at the highest bit rates and with the largest extinction ratios for silicon electro-optic transmitter using a CMOS driver.
authors.forename: Zheng
authors.initials: Z
authors.lastname: Yong
authors.forename: Stefan
authors.initials: S
authors.lastname: Shopov
authors.forename: Jared C
authors.initials: JC
authors.lastname: Mikkelsen
authors.forename: Robert
authors.initials: R
authors.lastname: Mallard
authors.forename: Jason C C
authors.initials: JC
authors.lastname: Mak
authors.forename: Sorin P
authors.initials: SP
authors.lastname: Voinigescu
authors.forename: Joyce K S
authors.initials: JK
authors.lastname: Poon