title: Multilayer Graphene with Chemical Modification as Transparent Conducting Electrodes in Organic Light-Emitting Diode.
abstract: Graphene is a promising candidate for the replacement of the typical transparent electrode indium tin oxide in optoelectronic devices. Currently, the application of polycrystalline graphene films grown by chemical vapor deposition is limited for their low electrical conductivity due to the poor transfer technique. In this work, we developed a new method of preparing tri-layer graphene films with chemical modification and explored the influence of doping and patterning process on the performance of the graphene films as transparent electrodes. In order to demonstrate the application of the tri-layer graphene films in optoelectronics, we fabricated the organic light-emitting diodes (OLEDs) based on them and found that plasma etching is feasible with certain influence on the quality of the graphene films and the performance of the OLEDs.
authors.affiliation: School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China.|Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.
authors.forename: Yilin
authors.initials: Y
authors.lastname: Xu
authors.affiliation: School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China.|Key Laboratory of Advanced Display and System Application, Shanghai University, Shanghai, 200072, China.
authors.forename: Haojian
authors.initials: H
authors.lastname: Yu
authors.affiliation: Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.
authors.forename: Cong
authors.initials: C
authors.lastname: Wang
authors.affiliation: Key Laboratory of Advanced Display and System Application, Shanghai University, Shanghai, 200072, China.
authors.forename: Jin
authors.initials: J
authors.lastname: Cao
authors.affiliation: School of Materials Science and Engineering, Shanghai University, Shanghai, 200444, China.
authors.forename: Yigang
authors.initials: Y
authors.lastname: Chen
authors.affiliation: Department of Physics, Shanghai University, Shanghai, 200444, China.
authors.forename: Zhongquan
authors.initials: Z
authors.lastname: Ma
authors.affiliation: Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.|Department of Physics, Shanghai University, Shanghai, 200444, China.
authors.forename: Ying
authors.initials: Y
authors.lastname: You
authors.affiliation: Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.|School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, China.
authors.forename: Jixiang
authors.initials: J
authors.lastname: Wan
authors.affiliation: Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China. fangxh@sari.ac.cn.
authors.forename: Xiaohong
authors.initials: X
authors.lastname: Fang
authors.affiliation: Thin Film Optoelectronic Technology Center, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201210, China.|School of Physical Science and Technology, Shanghai Tech University, Shanghai, 201210, China.
authors.forename: Xiaoyuan
authors.initials: X
authors.lastname: Chen
keywords: Multilayer-doped graphene; OLEDs; Pattern