title: Relation between growth rate and structure of graphene grown in a 4″ showerhead chemical vapor deposition reactor.
abstract: The chemical vapor deposition (CVD) growth of graphene on copper is controlled by a complex interplay of substrate preparation, substrate temperature, pressure and flow of reactive gases. A large variety of recipes have been suggested in literature, often quite specific to the reactor, which is being used. Here, we report on a relation between growth rate and quality of graphene grown in a scalable 4″ CVD reactor. The growth rate is varied by substrate pre-treatment, chamber pressure, and methane to hydrogen (CH4:H2) ratio, respectively. We found that at lower growth rates graphene grains become hexagonal rather than randomly shaped, which leads to a reduced defect density and a sheet resistance down to 268 Ω/sq.
authors.affiliation: Werkstoffe der Elektrotechnik and CENIDE, Universität Duisburg-Essen, D-47057 Duisburg, Germany.
authors.forename: B
authors.initials: B
authors.lastname: Bekdüz
authors.forename: Y
authors.initials: Y
authors.lastname: Beckmann
authors.forename: J
authors.initials: J
authors.lastname: Meier
authors.forename: J
authors.initials: J
authors.lastname: Rest
authors.forename: W
authors.initials: W
authors.lastname: Mertin
authors.forename: G
authors.initials: G
authors.lastname: Bacher