title: Spin-resolved band structure of heterojunction Bi-bilayer/3D topological insulator in the quantum dimension regime in annealed Bi2Te2.4Se0.6.
abstract: Two- and three-dimensional topological insulators are the key materials for the future nanoelectronic and spintronic devices and quantum computers. By means of angle- and spin-resolved photoemission spectroscopy we study the electronic and spin structure of the Bi-bilayer/3D topological insulator in quantum tunneling regime formed under the short annealing of Bi2Te2.4Se0.6. Owing to the temperature-induced restructuring of the topological insulator's surface quintuple layers, the hole-like spin-split Bi-bilayer bands and the parabolic electronic-like state are observed instead of the Dirac cone. Scanning Tunneling Microscopy and X-ray Photoemission Spectroscopy measurements reveal the appearance of the Bi2terraces at the surface under the annealing. The experimental results are supported by density functional theory calculations, predicting the spin-polarized Bi-bilayer bands interacting with the quintuple-layers-derived states. Such an easily formed heterostructure promises exciting applications in spin transport devices and low-energy electronics.
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.
authors.forename: I I
authors.initials: II
authors.lastname: Klimovskikh
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.
authors.forename: D
authors.initials: D
authors.lastname: Sostina
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.
authors.forename: A
authors.initials: A
authors.lastname: Petukhov
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.
authors.forename: A G
authors.initials: AG
authors.lastname: Rybkin
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.|Institute of Strength Physics and Materials Science, 634055, Tomsk, Russia.|Tomsk State University, 634050, Tomsk, Russia.
authors.forename: S V
authors.initials: SV
authors.lastname: Eremeev
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.|Tomsk State University, 634050, Tomsk, Russia.|Donostia International Physics Center (DIPC), 20018 San Sebastián/Donostia, Basque Country, Spain.|Departamento de Física de Materiales UPV/EHU, Centro de Física de Materiales CFM - MPC and Centro Mixto CSIC-UPV/EHU, 20080 San Sebastián/Donostia, Basque Country, Spain.
authors.forename: E V
authors.initials: EV
authors.lastname: Chulkov
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.|A.V. Rzhanov Institute of Semiconductor Physics, 630090, Novosibirsk, Russia.|Novosibirsk State University, 630090, Novosibirsk, Russia.
authors.forename: O E
authors.initials: OE
authors.lastname: Tereshchenko
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.|Novosibirsk State University, 630090, Novosibirsk, Russia.|V.S. Sobolev Institute of Geology and Mineralogy, 630090, Novosibirsk, Russia.
authors.forename: K A
authors.initials: KA
authors.lastname: Kokh
authors.affiliation: Saint Petersburg State University, 198504, Saint Petersburg, Russia.
authors.forename: A M
authors.initials: AM
authors.lastname: Shikin